KR20120136957A - A detergent composition for flat panel display device - Google Patents
A detergent composition for flat panel display device Download PDFInfo
- Publication number
- KR20120136957A KR20120136957A KR1020110056194A KR20110056194A KR20120136957A KR 20120136957 A KR20120136957 A KR 20120136957A KR 1020110056194 A KR1020110056194 A KR 1020110056194A KR 20110056194 A KR20110056194 A KR 20110056194A KR 20120136957 A KR20120136957 A KR 20120136957A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- group
- flat panel
- panel display
- compound represented
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 58
- 239000003599 detergent Substances 0.000 title claims description 4
- -1 hydroxylamine compound Chemical class 0.000 claims abstract description 32
- 239000002253 acid Substances 0.000 claims abstract description 31
- 150000001875 compounds Chemical class 0.000 claims abstract description 21
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003960 organic solvent Substances 0.000 claims abstract description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 8
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims abstract description 3
- 159000000000 sodium salts Chemical class 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims description 68
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 150000003839 salts Chemical class 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 7
- 125000003545 alkoxy group Chemical group 0.000 claims description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 6
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 6
- JPIGSMKDJQPHJC-UHFFFAOYSA-N 1-(2-aminoethoxy)ethanol Chemical compound CC(O)OCCN JPIGSMKDJQPHJC-UHFFFAOYSA-N 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical group COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- YSAANLSYLSUVHB-UHFFFAOYSA-N 2-[2-(dimethylamino)ethoxy]ethanol Chemical compound CN(C)CCOCCO YSAANLSYLSUVHB-UHFFFAOYSA-N 0.000 claims description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 4
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- 229920001174 Diethylhydroxylamine Polymers 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 125000004429 atom Chemical group 0.000 claims description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 150000001983 dialkylethers Chemical class 0.000 claims description 3
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 3
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 3
- NFJSYLMJBNUDNG-UHFFFAOYSA-N 1,3-dipropylimidazolidin-2-one Chemical compound CCCN1CCN(CCC)C1=O NFJSYLMJBNUDNG-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- IEEWESOCWFIEEO-UHFFFAOYSA-N 1-[2-(dipropylamino)ethoxy]ethanol Chemical compound CCCN(CCC)CCOC(C)O IEEWESOCWFIEEO-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- MXYOPVWZZKEAGX-UHFFFAOYSA-N 1-phosphonoethylphosphonic acid Chemical compound OP(=O)(O)C(C)P(O)(O)=O MXYOPVWZZKEAGX-UHFFFAOYSA-N 0.000 claims description 2
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 claims description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- FETMDPWILVCFLL-UHFFFAOYSA-N 2-[2-(2-propan-2-yloxyethoxy)ethoxy]ethanol Chemical compound CC(C)OCCOCCOCCO FETMDPWILVCFLL-UHFFFAOYSA-N 0.000 claims description 2
- VKBVRNHODPFVHK-UHFFFAOYSA-N 2-[2-(diethylamino)ethoxy]ethanol Chemical compound CCN(CC)CCOCCO VKBVRNHODPFVHK-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- KNQMOJDREHVDAF-UHFFFAOYSA-N 4-(ethoxymethyl)morpholine Chemical compound CCOCN1CCOCC1 KNQMOJDREHVDAF-UHFFFAOYSA-N 0.000 claims description 2
- BYSXWBNALKMFPC-UHFFFAOYSA-N 4-(methoxymethyl)morpholine Chemical compound COCN1CCOCC1 BYSXWBNALKMFPC-UHFFFAOYSA-N 0.000 claims description 2
- TUYRAIOYNUOFNH-UHFFFAOYSA-N CP(=O)(O)OP(=O)O Chemical compound CP(=O)(O)OP(=O)O TUYRAIOYNUOFNH-UHFFFAOYSA-N 0.000 claims description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- PVCJKHHOXFKFRP-UHFFFAOYSA-N N-acetylethanolamine Chemical compound CC(=O)NCCO PVCJKHHOXFKFRP-UHFFFAOYSA-N 0.000 claims description 2
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000004985 diamines Chemical class 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 claims description 2
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 2
- PAZXUKOJTOTKBK-UHFFFAOYSA-N n,n-dibutylhydroxylamine Chemical compound CCCCN(O)CCCC PAZXUKOJTOTKBK-UHFFFAOYSA-N 0.000 claims description 2
- VMESOKCXSYNAKD-UHFFFAOYSA-N n,n-dimethylhydroxylamine Chemical compound CN(C)O VMESOKCXSYNAKD-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 claims description 2
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 2
- HMWNSJOCVWNWJL-UHFFFAOYSA-N 1-amino-1-butoxyethanol Chemical compound C(C)CCOC(C)(O)N HMWNSJOCVWNWJL-UHFFFAOYSA-N 0.000 claims 1
- OLXIWCLTBDJQDF-UHFFFAOYSA-N 1-amino-1-propoxyethanol Chemical compound NC(C)(O)OCCC OLXIWCLTBDJQDF-UHFFFAOYSA-N 0.000 claims 1
- YCGHZPCZCOSQKQ-UHFFFAOYSA-N 3-(2-ethylhexoxy)-n,n-dimethylpropanamide Chemical compound CCCCC(CC)COCCC(=O)N(C)C YCGHZPCZCOSQKQ-UHFFFAOYSA-N 0.000 claims 1
- LVYXPOCADCXMLP-UHFFFAOYSA-N 3-butoxy-n,n-dimethylpropanamide Chemical compound CCCCOCCC(=O)N(C)C LVYXPOCADCXMLP-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 25
- 239000011521 glass Substances 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 14
- 229910019142 PO4 Inorganic materials 0.000 abstract description 2
- 239000011146 organic particle Substances 0.000 abstract description 2
- 239000002957 persistent organic pollutant Substances 0.000 abstract description 2
- 239000010452 phosphate Substances 0.000 abstract description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 35
- 229910052802 copper Inorganic materials 0.000 description 35
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 24
- 239000002245 particle Substances 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 18
- SAOKZLXYCUGLFA-UHFFFAOYSA-N bis(2-ethylhexyl) adipate Chemical compound CCCCC(CC)COC(=O)CCCCC(=O)OCC(CC)CCCC SAOKZLXYCUGLFA-UHFFFAOYSA-N 0.000 description 15
- 239000000356 contaminant Substances 0.000 description 13
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 239000000809 air pollutant Substances 0.000 description 6
- 231100001243 air pollutant Toxicity 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000002798 polar solvent Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 239000013522 chelant Substances 0.000 description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- MRGLOEHAJRFNTE-UHFFFAOYSA-N 1-(3-aminopropoxy)ethanol Chemical compound CC(O)OCCCN MRGLOEHAJRFNTE-UHFFFAOYSA-N 0.000 description 1
- LBVMWHCOFMFPEG-UHFFFAOYSA-N 3-methoxy-n,n-dimethylpropanamide Chemical compound COCCC(=O)N(C)C LBVMWHCOFMFPEG-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BLOSFJOPUKRCGS-UHFFFAOYSA-N NCCCCOC(C)O Chemical compound NCCCCOC(C)O BLOSFJOPUKRCGS-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 125000004914 dipropylamino group Chemical group C(CC)N(CCC)* 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- POCUPXSSKQAQRY-UHFFFAOYSA-N hydroxylamine;hydrate Chemical compound O.ON POCUPXSSKQAQRY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- UTWYCVYPCQKRDR-UHFFFAOYSA-N n-methyl-n-phenylhydroxylamine Chemical compound CN(O)C1=CC=CC=C1 UTWYCVYPCQKRDR-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- 150000005846 sugar alcohols Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000003021 water soluble solvent Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
Abstract
Description
본 발명은 평판표시장치용 세정제 조성물에 관한 것이다. The present invention relates to a cleaning composition for a flat panel display device.
평판표시장치(flat panel display device)는, 반도체 디바이스와 같이, 성막, 노광, 에칭 등의 공정을 거쳐 제품이 제조된다. 하지만, 이러한 제조공정에 의해서, 기판 표면에 각종의 유기물이나 무기물 등의 크기가 1㎛ 이하인 매우 작은 파티클(Particle)로 인해, 부착 오염이 발생한다. 이러한 파티클이 부착한 채로, 다음의 공정 처리를 실시했을 경우, 막의 핀홀이나 피트, 배선의 단선이나 브릿지(Bridge)가 발생하여, 제품의 제조 수율이 저하된다.Flat panel display devices, like semiconductor devices, are manufactured through processes such as film formation, exposure, and etching. However, by such a manufacturing process, adhesion contamination occurs due to very small particles having various organic and inorganic substances having a size of 1 μm or less on the substrate surface. When the following process treatment is performed while these particles are attached, pinholes and pits of the film, disconnection and bridges of the wiring are generated, and the production yield of the product is reduced.
따라서, 오염물을 제거하기 위한 세정이 각 공정 간에 행해지고 있고, 이를 위한 세정제에 대해서도 많은 연구가 있었다. 대한민국 공개특허 제2008-0038161호에서는 유기아민, 유기포스폰산, 직쇄 당알코올 및 물로 구성된 반도체 소자용 박리제 조성물을 개시하고 있다. 하지만 상기 공개특허는 반도체 소자로 용도가 한정되어 있고, 구리 및 구리합금으로 이루어진 배선에 대한 방식능력이 없는 단점이 있다. 대한민국 공개특허 제2004-0035368호에서는 알칸올 아민, 유기용매, 킬레이트 화합물 및 물로 구성된 반도체 및 TFT-LCD용 세정제 조성물을 개시하고 있다. 하지만, 상기 공개특허는 유기오염물 및 파티클 제거력이 부족하고, 폴리하이드록시 벤젠계 킬레이트 화합물인 카테콜 또는 갈산 등으로 인해 장기간 사용시 석출 문제가 발생할 수 있다. 대한민국 공개특허 제2006-0127098호에서는 유기산 성분, 유기 알칼리 성분, 계면활성제 성분 및 물을 포함하는 반도체 디바이스용 기판의 세정액을 개시하고 있다. 하지만, 상기 공개특허의 세정액은 산성 범위의 용액이므로 세정 초기의 단계의 기본적 특성인 유기물이나 무기물 등의 크기가 1㎛ 이하의 매우 작은 파티클(Particle)에 대한 제거성이 불충분하다. 그리고, 구리배선에 대한 방식효과만 있는 단점이 있다.Therefore, cleaning to remove contaminants is performed between the respective processes, and much research has been conducted on cleaning agents for this purpose. Korean Patent Laid-Open No. 2008-0038161 discloses a release agent composition for a semiconductor device composed of organic amine, organic phosphonic acid, linear sugar alcohol and water. However, the disclosed patent is limited to the use as a semiconductor device, there is a disadvantage that there is no anticorrosive ability for the wiring made of copper and copper alloy. Korean Patent Laid-Open Publication No. 2004-0035368 discloses a cleaning composition for a semiconductor and a TFT-LCD composed of an alkanol amine, an organic solvent, a chelating compound, and water. However, the disclosed patent lacks the ability to remove organic contaminants and particles, and may cause precipitation problems during long-term use due to catechol or gallic acid, which are polyhydroxy benzene-based chelate compounds. Korean Patent Laid-Open Publication No. 2006-0127098 discloses a cleaning liquid for a substrate for a semiconductor device including an organic acid component, an organic alkali component, a surfactant component, and water. However, since the cleaning solution of the disclosed patent is an acidic solution, the removal property of very small particles having a size of 1 μm or less, which is a basic property of the initial stage of cleaning, is insufficient. And, there is a disadvantage that only the anticorrosive effect on the copper wiring.
본 발명의 목적은 유리기판, 전극 또는 배선 상에 존재하는 유기 오염물 또는 파티클을 제거할 수 있는 평판표시장치용 세정제 조성물을 제공하는 것이다.An object of the present invention is to provide a cleaning composition for a flat panel display device capable of removing organic contaminants or particles present on a glass substrate, an electrode or a wiring.
본 발명의 목적은 평판표시장치에 이용되는 구리를 포함하는 금속, 알루미늄을 포함하는 금속 등으로 이루어진 전극 또는 배선 등을 부식시키지 않으면서 세정효과를 발휘하는 평판표시장치용 세정제 조성물을 제공하는 것이다.An object of the present invention is to provide a cleaning composition for a flat panel display device that exhibits a cleaning effect without corroding an electrode or a wiring made of a metal including copper, a metal containing aluminum, or the like used in the flat panel display device.
본 발명의 목적은 린스 문제가 발생하지 않고, 경제적이면서 친환경적인 평판표시장치용 세정제 조성물을 제공하는 것이다.An object of the present invention is to provide a cleaning composition for a flat panel display device, which is economical and environmentally friendly, without causing a rinse problem.
본 발명은 조성물 총 중량에 대하여, 하기 화학식 1로 표시되는 알콕시알칸올아민 화합물; 하기 화학식 2로 표시되는 히드록실아민 화합물; 수용성 유기용매; 유기인산 또는 유기인산의 염; 및 물을 포함하는 것을 특징으로 하는 평판표시장치용 세정제 조성물을 제공한다:The present invention is based on the total weight of the composition, an alkoxyalkanolamine compound represented by the formula (1); Hydroxylamine compound represented by the following formula (2); Water-soluble organic solvents; Organophosphoric acid or salts of organophosphoric acid; And it provides a cleaning composition for a flat panel display comprising a water:
<화학식 1>≪ Formula 1 >
<화학식 2><Formula 2>
상기 화학식 1 및 화학식 2에서, In the above formulas (1) and (2)
R1은 C1~C3의 직쇄 또는 분지쇄 히드록시알킬기, C1~C3의 직쇄 또는 분지쇄 티올알킬기 또는 티올기이고;R 1 is a C 1 to C 3 straight or branched hydroxyalkyl group, a C 1 to C 3 straight or branched thiolalkyl group or a thiol group;
R2 및 R3는 각각 독립적으로 수소, C1~C4의 알킬기, C1~C4의 히드록시알킬기, C6~C10의 아릴기, C2~C4의 알콕시로 치환된 C1~C4의 알킬기, C2~C4의 알콕시를 포함하는 알콕시알칸올기이고;R 2 and R 3 are each independently hydrogen, C 1 to C 4 alkyl group, C 1 to C 4 hydroxyalkyl group, C 6 to C 10 aryl group, C 2 to C 4 alkoxy substituted C 1 ~ C 4 alkyl group, an alkoxy alkane olgi containing alkoxy of C 2 ~ C 4;
이때, R1과 R2가 서로 결합하여 원자수 5 및 6의 환을 형성할 수 있고, 단, R3는 C1~C4의 히드록시알킬기는 아니고; At this time, R 1 and R 2 may be bonded to each other to form a ring having 5 and 6 atoms, provided that R 3 is not a C 1 to C 4 hydroxyalkyl group;
n은 1 내지 4의 정수고,n is an integer from 1 to 4,
R4 및 R5는 각각 독립적으로 C1~C10의 알킬기, C2~C10의 알케닐기, C1~C10의 히드록시알킬기, 카르복실기, 히드록시기로 치환 또는 비치환된 C1~C10의 알콕시기로 치환된 C1~C10의 알킬기, 페닐기 또는 벤질기이다.R 4 and R 5 are each independently a C 1 ~ C 10 alkyl group, C 2 ~ C 10 alkenyl group, C 1 ~ C 10 hydroxyalkyl group, a carboxyl group, a substituted or unsubstituted C 1 ~ C 10 ring to the hydroxyl group of the C 1 -C 10 alkyl, phenyl or benzyl group substituted with an alkoxy group.
본 발명의 평판표시장치용 세정제 조성물은 유리기판, 전극 또는 배선 상에 존재하는 유기 오염물 또는 파티클을 제거할 수 있다. 본 발명의 평판표시장치용 세정제 조성물은 평판표시장치에 이용되는 구리를 포함하는 금속, 알루미늄을 포함하는 금속 등으로 이루어진 전극 또는 배선 등을 부식시키지 않으면서 세정효과를 발휘할 수 있다. 본 발명의 평판표시장치용 세정제 조성물은 다량의 물을 사용함으로써 린스 문제가 발생할 가능성을 낮춘다. 그리고, 본 발명의 평판표시장치용 세정제 조성물은 경제적이고 친환경적이다. The cleaning composition for a flat panel display device of the present invention can remove organic contaminants or particles present on a glass substrate, an electrode, or a wiring. The cleaning composition for a flat panel display device of the present invention can exert a cleaning effect without corroding an electrode or a wiring made of a metal including copper, a metal containing aluminum, or the like used in the flat panel display device. The cleaning composition for a flat panel display device of the present invention lowers the possibility of rinsing problems by using a large amount of water. In addition, the cleaning composition for a flat panel display device of the present invention is economical and environmentally friendly.
도 1은 실시예6의 세정제 조성물을 이용하여 구리가 형성된 유리기판 표면의 세정 전후의 접촉각을 나타낸 사진이다.
도 2는 비교예4의 세정제 조성물을 이용하여 구리가 형성된 유리기판 표면의 세정 전후의 접촉각을 나타낸 사진이다.1 is a photograph showing a contact angle before and after cleaning a surface of a glass substrate on which copper is formed using the cleaning composition of Example 6. FIG.
Figure 2 is a photograph showing the contact angle before and after cleaning the surface of the glass substrate with copper using the cleaning composition of Comparative Example 4.
이하, 본 발명에 대해 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 평판표시장치용 세정제 조성물은 알콕시알칸올아민 화합물, 히드록실아민 화합물, 수용성 유기용매, 유기인산 또는 유기인산의 염, 및 물을 포함한다.
The cleaning composition for a flat panel display device of the present invention contains an alkoxyalkanolamine compound, a hydroxylamine compound, a water-soluble organic solvent, an organic phosphoric acid or a salt of an organic phosphoric acid, and water.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 알콕시알칸올아민 화합물은 하기 화학식 1로 표시된다.The alkoxyalkanolamine compound contained in the cleaning composition for flat panel display devices of this invention is represented by following General formula (1).
<화학식 1>≪ Formula 1 >
R1은 C1~C3의 직쇄 또는 분지쇄 히드록시알킬기, C1~C3의 직쇄 또는 분지쇄 티올알킬기 또는 티올기이고; R2 및 R3는 각각 독립적으로 수소, C1~C4의 알킬기, C1~C4의 히드록시알킬기, C6~C10의 아릴기, C2~C4의 알콕시로 치환된 C1~C4의 알킬기, C2~C4의 알콕시를 포함하는 알콕시알칸올기이고; 이때, R1과 R2가 서로 결합하여 원자수 5 및 6의 환을 형성할 수 있고, 단, R3는 C1~C4의 히드록시알킬기는 아니고; n은 1 내지 4의 정수다.
R 1 is a C 1 to C 3 straight or branched hydroxyalkyl group, a C 1 to C 3 straight or branched thiolalkyl group or a thiol group; R 2 and R 3 are each independently hydrogen, C 1 to C 4 alkyl group, C 1 to C 4 hydroxyalkyl group, C 6 to C 10 aryl group, C 2 to C 4 alkoxy substituted C 1 ~ C 4 alkyl group, an alkoxy alkane olgi containing alkoxy of C 2 ~ C 4; At this time, R 1 and R 2 may be bonded to each other to form a ring having 5 and 6 atoms, provided that R 3 is not a C 1 to C 4 hydroxyalkyl group; n is an integer from 1 to 4.
상기 화학식 1로 표시되는 알콕시알칸올아민 화합물은 파티클, 유기 오염물을 제거할 수 있는 염기성 물질일 뿐만 아니라, 알콕시 구조를 가지므로 다른 아민과 혼합하여 사용할 경우 알루미늄을 포함하는 금속 또는 구리를 포함하는 금속에 대한 부식방지 효과를 갖는다.The alkoxyalkanolamine compound represented by Chemical Formula 1 is not only a basic material capable of removing particles and organic contaminants, but also has an alkoxy structure, so when used in combination with other amines, a metal containing aluminum or a metal containing copper. Has anti-corrosion effect against
상기 화학식 1로 표시되는 알콕시알칸올아민 화합물은 조성물 총 중량에 대하여, 바람직하게는 0.01~5중량%로 포함되고, 보다 바람직하게는 0.05~2중량%로 포함된다. 상술한 범위를 만족하면, 세정제 내의 활동도가 왕성하여 유기 오염물 및 파티클의 제거 효과가 우수해지고, 이로 인해 충분한 세정효과가 달성된다. 그리고, 구리를 포함하는 금속 및 알루미늄을 포함하는 금속에 대한 방식효과가 증대된다.The alkoxyalkanolamine compound represented by the formula (1) is preferably contained in 0.01 to 5% by weight, more preferably 0.05 to 2% by weight based on the total weight of the composition. When the above-mentioned range is satisfied, the activity in the detergent is vigorous, so that the effect of removing organic contaminants and particles is excellent, thereby achieving a sufficient cleaning effect. And the anticorrosive effect with respect to the metal containing copper and the metal containing aluminum is increased.
상기 화학식 1로 표시되는 화합물은 상기 화학식 1을 만족한다면 특별히 한정하지 않으나, 아미노에톡시에탄올, 아미노프로폭시에탄올, 아미노부톡시에탄올, 디메틸아미노에톡시티올, 디에틸아미노에톡시티올, 디프로필아미노에톡시티올, 디부틸아미노에톡시티올, 디부틸아미노에톡시에탄올 디메틸아미노에톡시에탄올, 디에틸아미노에톡시에탄올, 디프로필아미노에톡시에탄올, 디부틸아미노에톡시에탄올, N-(메톡시메틸)몰포린, N-(에톡시메틸)몰포린, N-(메톡시에탄올)몰포린, N-(에톡시에탄올)몰포린 및 N-(부톡시에탄올)몰포린으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다. 이 중에서 아미노에톡시에탄올, 디메틸아미노에톡시에탄올이 보다 바람직하다.The compound represented by Chemical Formula 1 is not particularly limited as long as it satisfies Chemical Formula 1, but is not limited to aminoethoxyethanol, aminopropoxyethanol, aminobutoxyethanol, dimethylaminoethoxythiol, diethylaminoethoxythiol, and dipropylamino. Ethoxythiol, dibutylaminoethoxythiol, dibutylaminoethoxyethanol dimethylaminoethoxyethanol, diethylaminoethoxyethanol, dipropylaminoethoxyethanol, dibutylaminoethoxyethanol, N- (methoxymethyl ) Morpholine, N- (ethoxymethyl) morpholine, N- (methoxyethanol) morpholine, N- (ethoxyethanol) morpholine and N- (butoxyethanol) morpholine selected from the group consisting of It is preferable that it is a species or 2 or more types. Among these, aminoethoxy ethanol and dimethylamino ethoxy ethanol are more preferable.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 히드록실아민 화합물은 하기 화학식 2로 표시된다.The hydroxylamine compound included in the cleaning composition for a flat panel display device of the present invention is represented by the following formula (2).
<화학식 2><Formula 2>
상기 화학식 2에서, In Formula 2,
R4 및 R5는 각각 독립적으로 C1~C10의 알킬기, C2~C10의 알케닐기, C1~C10의 히드록시알킬기, 카르복실기, 히드록시기로 치환 또는 비치환된 C1~C10의 알콕시기로 치환된 C1~C10의 알킬기, 페닐기 또는 벤질기이다.R 4 and R 5 are each independently a C 1 ~ C 10 alkyl group, C 2 ~ C 10 alkenyl group, C 1 ~ C 10 hydroxyalkyl group, a carboxyl group, a substituted or unsubstituted C 1 ~ C 10 ring to the hydroxyl group of the C 1 -C 10 alkyl, phenyl or benzyl group substituted with an alkoxy group.
상기 화학식 2로 표시되는 화합물은 구리를 포함하는 금속 및 알루미늄을 포함하는 금속에 대한 방식효과를 향상시킨다. 그리고, 본 발명의 평판표시장치용 세정제 조성물의 pH를 알칼리 용액 수준으로 조절하는데 도움을 준다.The compound represented by Chemical Formula 2 improves the anticorrosive effect on the metal including copper and the metal including aluminum. And, it helps to adjust the pH of the cleaning composition for a flat panel display of the present invention to the alkaline solution level.
상기 화학식 2로 표시되는 화합물은 조성물 총 중량에 대하여, 바람직하게는 0.01~10중량%로 포함되고, 보다 바람직하게는 0.1~5중량%로 포함된다. 상술한 범위를 만족하면, 구리를 포함하는 금속 및 알루미늄을 포함하는 금속에 대한 방식효과를 향상시킨다. 그리고, 본 발명의 평판표시장치용 세정제 조성물의 pH를 알칼리 용액 수준으로 조절하는데 도움을 준다.The compound represented by Chemical Formula 2 is preferably contained in an amount of 0.01 to 10% by weight, and more preferably 0.1 to 5% by weight, based on the total weight of the composition. If the above range is satisfied, the anticorrosive effect on the metal containing copper and the metal containing aluminum is improved. And, it helps to adjust the pH of the cleaning composition for a flat panel display of the present invention to the alkaline solution level.
상기 화학식 2로 표시되는 화합물은 상기 화학식 2를 만족한다면 특별히 한정하지 않으나, 디메틸히드록실아민, 디에틸히드록실아민, 디부틸히드록실아민, 및 메틸페닐히드록실아민으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다.The compound represented by Chemical Formula 2 is not particularly limited as long as it satisfies Chemical Formula 2, but one selected from the group consisting of dimethyl hydroxylamine, diethyl hydroxylamine, dibutyl hydroxylamine, and methylphenylhydroxylamine, or It is preferable that it is 2 or more types.
한편, 상기 화학식 1로 표시되는 알콕시알칸올아민 화합물과 상기 화학식 2로 표시되는 히드록실아민 화합물은 본 발명의 평판표시장치용 세정제 조성물에 바람직하게는 1:2~1:10의 중량비로 포함된다. 상술한 범위를 만족하면, 알루미늄을 포함하는 금속으로 이루어진 전극 또는 배선의 방식을 위해 이용된 유기산으로 인한, 구리를 포함하는 금속으로 이루어진 전극 또는 배선의 부식을 방지하면서 유기물 및 파티클에 대한 세정력을 적정하게 유지하는 pH를 유지할 수 있다.
Meanwhile, the alkoxyalkanolamine compound represented by Chemical Formula 1 and the hydroxylamine compound represented by Chemical Formula 2 are preferably included in the weight ratio of 1: 2 to 1:10 in the cleaning composition for a flat panel display device of the present invention. . When the above-mentioned range is satisfied, the cleaning power for organic matter and particles is appropriate while preventing corrosion of electrodes or wires made of metals containing copper, due to organic acids used for the electrodes or wires made of metals including aluminum. To maintain the pH.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 수용성 유기용매는 유기 오염물 또는 파티클에 대한 용해력을 증가시키기 위하여 이용된다.The water-soluble organic solvent included in the flat panel display cleaning composition of the present invention is used to increase the dissolving power to organic contaminants or particles.
상기 수용성 유기용매는 조성물 총 중량에 대하여, 바람직하게는 0.01~10중량%로 포함되고, 보다 바람직하게는 0.1~5중량%로 포함된다. 상술한 범위로 포함되면, 유기 오염물 또는 파티클에 대한 용해력이 증대되고, 경제적이고 환경친화적이다.The water-soluble organic solvent is preferably contained in an amount of 0.01 to 10% by weight, more preferably 0.1 to 5% by weight based on the total weight of the composition. When included in the above-mentioned range, the solubility to organic contaminants or particles is increased, and economical and environmentally friendly.
상기 수용성 유기용매는 양자성 극성 용매와 비양자성 극성 용매를 이용할 수 있다. 상기 양자성 극성 용매는 에틸렌글리콜 모노메틸 에테르, 에틸렌글리콜 모노에틸 에테르, 에틸렌글리콜 모노이소프로필 에테르, 에틸렌글리콜 모노부틸 에테르, 디에틸렌글리콜 모노메틸 에테르, 디에틸렌글리콜 모노에틸 에테르, 디에틸렌글리콜 모노이소프로필 에테르, 디에틸렌글리콜 모노부틸 에테르, 트리에틸렌글리콜 모노메틸 에테르, 트리에틸렌글리콜 모노에틸 에테르, 트리에틸렌글리콜 모노이소프로필 에테르, 트리에틸렌글리콜 모노부틸 에테르, 폴리에틸렌글리콜 모노메틸 에테르, 폴리에틸렌글리콜 모노부틸 에테르, 프로필렌글리콜 모노메틸 에테르, 디프로필렌글리콜 모노메틸 에테르, 트리프로필렌글리콜 모노메틸 에테르 및 프로필렌글리콜 모노메틸 에테르 아세테이트로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다. The water-soluble organic solvent may be a protic polar solvent and an aprotic polar solvent. The proton polar solvent is ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoiso Propyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether At least one selected from the group consisting of propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate. Preferable.
상기 비양자성 극성 용매는 피롤리돈 화합물, 이미다졸리디논 화합물, 락톤 화합물, 설폭사이드 화합물, 포스페이트 화합물, 카보네이트 화합물 및 아미드 화합물로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다. 보다 구체적으로 설명하면, 상기 비양자성 극성 용매는 N-메틸 피롤리돈(NMP), N-에틸 피롤리돈, 1,3-디메틸-2-이미다졸리디논, 1,3-디프로필-2-이미다졸리디논, γ?부티로락톤, 디메틸술폭사이드(DMSO), 술폴란, 트리에틸포스페이트, 트리부틸포스페이트, 디메틸카보네이트, 에틸렌카보네이토, 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-(2-히드록시에틸)아세트아미드, 3-메톡시-N,N-디메틸프로피온아미드, 3-(2-에틸헥실옥시)-N,N-디메틸프로피온아미드 및 3-부톡시-N,N-디메틸프로피온아미드로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다. The aprotic polar solvent is preferably one or two or more selected from the group consisting of a pyrrolidone compound, an imidazolidinone compound, a lactone compound, a sulfoxide compound, a phosphate compound, a carbonate compound and an amide compound. More specifically, the aprotic polar solvent is N-methyl pyrrolidone (NMP), N-ethyl pyrrolidone, 1,3-dimethyl- 2-imidazolidinone, 1,3-dipropyl-2 Imidazolidinone, γ-butyrolactone, dimethyl sulfoxide (DMSO), sulfolane, triethyl phosphate, tributyl phosphate, dimethyl carbonate, ethylene carbonato, formamide, N-methylformamide, N, N -Dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3-methoxy-N, N-dimethylpropionamide, 3- ( It is preferable that it is 1 type, or 2 or more types chosen from the group which consists of 2-ethylhexyloxy) -N, N- dimethyl propionamide and 3-butoxy-N, N- dimethyl propionamide.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 유기인산 또는 유기인산의 염은 무기이온과 강력하게 결합하고 불순물 입자들이 서로 응집되지 않게 분산시킨다. 상기 유기인산 또는 유기인산의 염은 유/무기 오염물에 대한 제거력이 뛰어나다. 상기 유기인산 또는 유기인산의 염은 알루미늄을 포함하는 금속과 구리를 포함하는 금속에 대한 킬레이트 화합물로 작용하여 상기 금속의 부식을 방지해준다. 그리고, 본 발명의 평판표시장치용 세정제 조성물의 pH를 조절하므로, 금속 부식 방지 및 우수한 세정효과를 동시에 구현할 수 있게 한다.The organic phosphoric acid or the salt of the organic phosphoric acid included in the cleaning composition for a flat panel display device of the present invention binds strongly with an inorganic ion and disperses the impurity particles so that they do not aggregate with each other. The organophosphoric acid or salts of organophosphoric acid are excellent in removing the organic / inorganic contaminants. The organophosphoric acid or a salt of the organophosphoric acid serves as a chelate compound for the metal including aluminum and the metal including copper to prevent corrosion of the metal. And, by adjusting the pH of the cleaning composition for a flat panel display device of the present invention, it is possible to implement a metal corrosion prevention and excellent cleaning effect at the same time.
상기 유기인산 또는 유기인산의 염은 조성물 총 중량에 대하여, 바람직하게는 0.001~5중량%로 포함되고, 보다 바람직하게는 0.01~2중량%로 포함된다. 상술한 범위를 만족하면, 세정효과가 향상되고, 알루미늄을 포함하는 금속과 구리를 포함하는 금속에 대하여 킬레이트 화합물로 작용하여 상기 금속의 부식을 방지해준다. The organophosphoric acid or the salt of organophosphoric acid is preferably contained in an amount of 0.001 to 5% by weight, and more preferably 0.01 to 2% by weight, based on the total weight of the composition. When the above-mentioned range is satisfied, the cleaning effect is improved, and the metals containing aluminum and the metals containing copper act as chelate compounds to prevent corrosion of the metals.
상기 유기인산은 메틸디포스폰산, 아미노트리(메틸렌포스폰산), 에틸리덴디포스폰산, 1-히드록시에틸리덴-1,1-디포스폰산, 1-히드록시프로필리덴-1,1-디포스폰산, 1-히드록시부틸리덴-1,1-디포스폰산, 에틸아미노비스(메틸렌포스폰산), 1,2-프로필렌디아민테트라(메틸렌포스폰산), 도데실아미노비스(메틸렌포스폰산), 니트로트리스(메틸렌포스폰산), 에틸렌디아민비스(메틸렌포스폰산), 에틸렌디아민테트라(메틸렌포스폰산), 헥센디아민테트라(메틸렌포스폰산), 디에틸렌트리아민펜타(메틸렌포스폰산) 및 시클로헥산디아민테트라(메틸렌포스폰산)으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다. The organophosphoric acid may be methyldiphosphonic acid, aminotri (methylenephosphonic acid), ethylidenediphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, 1-hydroxypropylidene-1,1- Diphosphonic acid, 1-hydroxybutylidene-1,1-diphosphonic acid, ethylaminobis (methylenephosphonic acid), 1,2-propylenediaminetetra (methylenephosphonic acid), dodecylaminobis (methylenephosphonic acid ), Nitrotris (methylenephosphonic acid), ethylenediaminebis (methylenephosphonic acid), ethylenediaminetetra (methylenephosphonic acid), hexenediaminetetra (methylenephosphonic acid), diethylenetriaminepenta (methylenephosphonic acid) and cyclohexane It is preferable that it is 1 type (s) or 2 or more types chosen from the group which consists of diamine tetra (methylene phosphonic acid).
상기 유기인산의 염은 유기인산의 칼륨염 또는 유기인산의 나트륨염인 것이 바람직한데, 상기 유기인산의 예는 상술한 것과 동일하다.
The salt of the organophosphoric acid is preferably a potassium salt of organophosphoric acid or a sodium salt of organophosphoric acid. Examples of the organophosphoric acid are the same as described above.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 물은 조성물 총 중량이 100중량%가 되도록 잔량을 포함되는 것이 바람직하다. 상기 물은 반도체 공정용을 사용하며, 바람직하게는 18㏁?㎝ 이상의 탈이온수를 사용한다.
The water contained in the flat panel display cleaning composition of the present invention preferably contains a residual amount such that the total weight of the composition is 100% by weight. The water is used for the semiconductor process, preferably deionized water of 18 ㏁cm or more.
본 발명의 평판표시장치용 세정제 조성물은 아졸계 화합물을 이용하지 않고도 구리를 포함하는 금속으로 이루어진 전극 또는 배선에 방식능력을 부여할 수 있다.The cleaning composition for a flat panel display device of the present invention can impart anticorrosion ability to an electrode or a wiring made of a metal containing copper without using an azole compound.
상기 아졸계 화합물이 평판표시장치용 세정제 조성물에 포함되면 좋지 않은 영향을 미칠 수 있는 데, 그 이유는 하기와 같다.When the azole compound is included in the cleaning composition for a flat panel display device, it may adversely affect the reason, as follows.
상기 아졸계 화합물은 아졸을 형성하고 있는 질소가 입체적으로 구리 표면에 흡착하여 구리와 킬레이트 반응하여 부식을 방지하기 때문에, 구리를 포함하는 금속으로 이루어진 전극 또는 배선에 대한 부식 방지 능력이 탁월한 방식제이다. 하지만, 구리의 특성상 아졸계 화합물이 구리와 강하게 킬레이트되어, 구리의 표면에 남아 구리-아졸 화합물을 표면에 형성한다. 상기 구리-아졸 화합물은 금속 배선에 저항을 상승시키는 원인이 될 수 있고, 후 공정이 포토리소그래피 공정일 경우, 구리막질 표면에 남아 2차 오염원으로 작용하여 포토레지스트의 접착력을 저하시켜, 배선의 단선이나 브릿지 등의 원인이 될 수 있다. The azole compound is an anticorrosive agent having excellent anti-corrosion ability against electrodes or wirings made of metal containing copper because nitrogen forming azoles adsorbs on the copper surface in three dimensions and chelates with copper to prevent corrosion. . However, due to the nature of copper, an azole compound is strongly chelated with copper, remaining on the surface of copper to form a copper-azole compound on the surface. The copper-azole compound may cause an increase in resistance to the metal wiring, and when the post-process is a photolithography process, the copper-azole compound remains on the surface of the copper film to act as a secondary pollutant to lower the adhesion of the photoresist, thereby causing disconnection of the wiring. It may be the cause of the bridge.
따라서, 상기 아졸계 화합물이 평판표시장치용 세정제 조성물에 포함되지 않는 것이 바람직하다.
Therefore, it is preferable that the azole compound is not included in the cleaning composition for a flat panel display device.
본 발명은 상기 평판표시장치용 세정제 조성물로 제조된 평판표시장치를 제공한다. 상기 평판표시장치의 예로는 유기전계발광소자, 액정표시장치 등을 들 수 있다.
The present invention provides a flat panel display device made of the cleaning composition for the flat panel display device. Examples of the flat panel display include an organic light emitting display device and a liquid crystal display.
본 발명의 평판표시장치용 세정제 조성물은 유리기판, 전극 또는 배선 상에 존재하는 유기 오염물 또는 파티클을 제거할 수 있다. 본 발명의 평판표시장치용 세정제 조성물은 평판표시장치에 이용되는 구리를 포함하는 금속, 알루미늄을 포함하는 금속 등으로 이루어진 전극 또는 배선 등을 부식시키지 않으면서 세정효과를 발휘할 수 있다.
The cleaning composition for a flat panel display device of the present invention can remove organic contaminants or particles present on a glass substrate, an electrode, or a wiring. The cleaning composition for a flat panel display device of the present invention can exert a cleaning effect without corroding an electrode or a wiring made of a metal including copper, a metal containing aluminum, or the like used in the flat panel display device.
이하에서, 실시예 및 시험예를 통하여 본 발명을 더욱 상세하게 설명한다. 그러나, 본 발명의 범위가 하기의 실시예 및 시험예에 의하여 한정되는 것은 아니다.
Hereinafter, the present invention will be described in more detail with reference to Examples and Test Examples. However, the scope of the present invention is not limited by the following examples and test examples.
실시예1 내지 실시예12, 비교예1 내지 비교예5: 세정제 조성물의 제조Examples 1-12, Comparative Examples 1-5: Preparation of Cleaning Composition
교반기가 설치되어 있는 혼합조에 하기 표 1에 기재된 성분들을 표 1에 기재된 조성비에 따라 혼합하고, 상온에서 1시간 동안 500rpm의 속도로 교반하여 세정제 조성물을 제조하였다.In the mixing tank equipped with a stirrer, the components shown in Table 1 were mixed according to the composition ratios shown in Table 1, and stirred at a speed of 500 rpm for 1 hour at room temperature to prepare a cleaning composition.
AEE: 아미노에톡시에탄올 DAEE: 디메틸아미노에톡시에탄올AEE: aminoethoxyethanol DAEE: dimethylaminoethoxyethanol
DEHA: 디에틸하이드록실아민 MDG: 디에틸렌글리콜모노메틸에테르DEHA: diethylhydroxylamine MDG: diethylene glycol monomethyl ether
NMP: N-메틸피롤리돈 MTG: 트리에틸렌글리콜모노메틸에테르NMP: N-methylpyrrolidone MTG: triethylene glycol monomethyl ether
DMI: 1,3-디메틸-2-이미다졸리디논 HEDP: 1-히드록시에틸리덴-1,1-디포스폰산DMI: 1,3-dimethyl-2-imidazolidinone HEDP: 1-hydroxyethylidene-1,1-diphosphonic acid
ATMP: 아미노트리(메틸렌포스폰산) BTA: 벤조트리아졸ATMP: aminotri (methylenephosphonic acid) BTA: benzotriazole
TTA: 톨리트리아졸
TTA: tolytriazole
시험예: 세정제 조성물의 특성 평가Test Example: Evaluation of Characteristics of Cleaning Composition
1) 알루미늄, 구리 에칭 속도 평가1) aluminum, copper etching rate evaluation
먼저 알루미늄 두께가 2000Å, 구리가 2500Å 두께로 형성된 유리기판을 실시예1 내지 실시예12 및 비교예1 내지 비교예5의 세정제 조성물에 30분간 침지시킨다. 이때 세정액의 온도는 상온이며 알루미늄 및 구리 막의 두께를 침지시키기 이전 및 이후에 측정하고, 알루미늄 및 구리막의 용해속도를 막의 두께 변화로부터 계산하여 측정한다. 부식 평가는 하기와 같은 기준으로 평가하였으며, 그 결과를 표 2에 기재하였다.First, a glass substrate having an aluminum thickness of 2000 kPa and copper of 2500 kPa was immersed in the cleaning composition of Examples 1 to 12 and Comparative Examples 1 to 5 for 30 minutes. At this time, the temperature of the cleaning liquid is measured at room temperature before and after immersing the thickness of the aluminum and copper film, and is calculated by calculating the dissolution rate of the aluminum and copper film from the thickness change of the film. Corrosion evaluation was evaluated based on the following criteria, the results are shown in Table 2.
※ 부식평가기준※ Corrosion Evaluation Criteria
◎: 우수(2Å/min 미만) ○: 양호(2Å/min 이상 5Å/min 미만)(Double-circle): Excellent (less than 2 s / min) ○: Good (2 s / min or more and less than 5 s / min)
△: 미흡(5Å/min 이상 10Å/min 미만) Ⅹ: 불량(10Å/min 이상)
(Triangle | delta): Inadequate (5 mW / min or more and less than 10 mW / min)
2) 유기 오염물 제거력 평가2) Evaluation of organic pollutant removal
유기 오염물의 제거력 평가를 위해 5㎝ x 5㎝ 크기로 형성된 유리기판 위에 사람의 지문 자국으로 오염시키고, 오염된 기판을 스프레이식 유리 기판 세정장치를 이용하여 1분 동안 상온에서 실시예1 내지 실시예12, 비교예1 내지 비교예5의 세정제 조성물로 세정하였다. 세정 후 초순수에 30초 세척한 후 질소로 건조하였다. In order to evaluate the removal power of organic contaminants, the fingerprint substrate is contaminated with a human fingerprint on a glass substrate formed of 5 cm x 5 cm, and the contaminated substrate is cleaned at room temperature for 1 minute using a spray-type glass substrate cleaning device. 12, the cleaning composition of Comparative Examples 1 to 5 was washed. After washing, it was washed with ultrapure water for 30 seconds and then dried with nitrogen.
이때 하기 표 2에서 유기 오염물의 제거 유무는 제거가 되었을 때, ○, 제거가 되지 않았을 때 X로 표시하였다.
At this time, the presence or absence of the organic contaminants in Table 2, when removed, was marked with X, when not removed.
3) 대기 오염물 제거력 평가3) Air pollutant removal ability evaluation
또한, 유리기판과 구리가 2500Å 두께로 형성된 유리기판을 대기 중에 24시간 방치하여 대기중의 각종 유기물, 무기물, 파티클 등에 오염시킨 후 스프레이식 유리 기판 세정장치를 이용하여 1분 동안 상온에서 실시예1 내지 실시예12 및 비교예1 내지 비교예5의 세정제 조성물로 세정하였다 세정 후 초순수에 30초 세척한 후 질소로 건조하였다. 상기 유리기판 위에 0.5㎕의 초순수 방울을 떨어뜨려 세정후의 접촉각을 측정하였다. 접촉각 평가는 하기와 같은 기준으로 평가하였고, 그 결과를 표 2에 나타내었다.In addition, the glass substrate and the glass substrate having a copper thickness of 2500Å was left in the air for 24 hours to contaminate various organic materials, inorganic materials, and the like in the air, and then, at room temperature for 1 minute using a spray-type glass substrate cleaning device, Example 1 It was washed with the cleaning agent composition of Example 12 and Comparative Examples 1 to 5 after washing to 30 seconds in ultrapure water and then dried with nitrogen. 0.5 μl of ultrapure water was dropped on the glass substrate to measure the contact angle after washing. Contact angle evaluation was evaluated based on the following criteria, the results are shown in Table 2.
※ 접촉각 평가기준※ Evaluation criteria of contact angle
◎: 우수(40°초과 감소), ○: 양호(40~30°감소)(Double-circle): Excellent (reduced more than 40 degrees), (circle): Good (40-30 degrees reduced)
△: 미흡 (30~20°감소), X: 불량(20°미만 감소)
△: Insufficient (30-20 ° decrease), X: Poor (less than 20 ° decrease)
4) 파티클제거력 평가4) Particle removal ability evaluation
실시예1, 실시예4, 실시예6, 실시예9, 비교예1 내지 비교예3의 세정제 조성물을 가지고, 실리콘나이트라이드 파티클 솔루션으로 오염시킨 유리기판에 대한 세정을 실시하였다. 즉, 유리기판를 서브마이크론의 실리콘나이트라이드 파티클 솔루션으로 오염시키고 1분간 3000rpm으로 스핀(spin) 드라이한 후 스프레이식 유리 기판 세정장치를 이용하여 1분 동안 상온에서 각각의 세정액으로 세정하였다. 세정 후 초순수에 30초 세척한 후 질소로 건조하였다. 세정 전후의 파티클 수는 표면입자측정기(Topcon WM-1500)로 0.1㎛ 이상의 파티클 수를 측정하였고, 표 2에 나타내었다.The glass substrates having the cleaning composition of Examples 1, 4, 6, 9, and Comparative Examples 1 to 3 and contaminated with silicon nitride particle solution were washed. That is, the glass substrate was contaminated with a silicon nitride particle solution of submicron, spin-dried at 3000 rpm for 1 minute, and then cleaned with each cleaning solution at room temperature for 1 minute using a spray-type glass substrate cleaner. After washing, it was washed with ultrapure water for 30 seconds and then dried with nitrogen. The number of particles before and after cleaning was measured by a particle size measuring instrument (Topcon WM-1500) of 0.1 μm or more, and is shown in Table 2.
(Å/분)Al etching rate
(Å / min)
(Å/분)Cu etching rate
(Å / min)
(%)Removal rate
(%)
표 2를 참조하면, 본 발명에 따른 실시예1 내지 실시예10의 세정제 조성물은 알루미늄 및 구리에 대한 방식 성능이 우수하고, 유기지문, 대기 오염물에 대한 제거력도 우수한 것을 알 수 있다. 특히, 실시예1, 실시예4, 실시예6 및 실시예9의 경우, 파티클 제거능력이 우수함을 알 수 있다. 다만, 실시예11과 실시예12의 경우, 구리에 대한 방식 성능은 다른 실시예들에 비하여 부족하였다. 하지만, 다른 성능, 알루미늄에 대한 방식 성능, 유기지문, 대기 오염물에 대한 제거력은 모두 우수하였다. Referring to Table 2, it can be seen that the cleaning composition of Examples 1 to 10 according to the present invention is excellent in anticorrosive performance for aluminum and copper, and also excellent in removing organic fingerprints and air pollutants. In particular, in Example 1, Example 4, Example 6 and Example 9, it can be seen that the particle removal ability is excellent. However, in the case of Example 11 and Example 12, the anticorrosive performance for copper was insufficient compared to other examples. However, other performances, corrosion protection for aluminum, organic fingerprints and removal of air pollutants were all excellent.
한편, 도 1은 실시예6의 세정제 조성물을 이용하여 구리가 형성된 유리기판 표면의 세정 전후의 접촉각을 나타낸 사진이다. On the other hand, Figure 1 is a photograph showing the contact angle before and after cleaning the surface of the glass substrate with copper using the cleaning composition of Example 6.
도 1을 참조하면, 접촉각의 변화가 현저하므로, 대기 오염물이 제거되었음을 알 수 있다.Referring to FIG. 1, since the change in contact angle is remarkable, it can be seen that air pollutants have been removed.
한편, 비교예1의 경우, 알루미늄 및 구리에 대한 방식 성능이 우수하지 못하고, 비교예2의 경우, 알루미늄에 대한 방식성능이 우수하지 못함을 알 수 있다. 그리고, 비교예3의 경우, 구리에 대한 방식성능이 우수하지 못하고, 유기지문에 대한 세정력이 우수하지 못함을 알 수 있다. 비교예4와 비교예5의 경우는 유기지문과 대기오염물에 대한 세정력이 우수하지 못함을 알 수 있다. On the other hand, in the case of Comparative Example 1, the anticorrosive performance for aluminum and copper is not excellent, in the case of Comparative Example 2, it can be seen that the anticorrosive performance for aluminum is not excellent. And, in the case of Comparative Example 3, it can be seen that the anticorrosive performance for copper is not excellent, the cleaning power for the organic fingerprint is not excellent. In Comparative Example 4 and Comparative Example 5 it can be seen that the cleaning power for organic fingerprints and air pollutants are not excellent.
도 2는 비교예4의 세정제 조성물을 이용하여 구리가 형성된 유리기판 표면의 세정 전후의 접촉각을 나타낸 사진이다.Figure 2 is a photograph showing the contact angle before and after cleaning the surface of the glass substrate with copper using the cleaning composition of Comparative Example 4.
도 2를 참조하면, 접촉각의 변화가 거의 없으므로, 대기 오염물이 거의 제거되지 않음을 알 수 있다. Referring to FIG. 2, since there is almost no change in contact angle, it can be seen that air pollutants are hardly removed.
또한, 비교예1 대비 아졸계 방식제를 포함하는 비교예4의 경우 사용된 아졸계 방식제가 구리표면에 흡착하여 오염물이 세정을 통해 제거되더라도 접촉각 변화가 크지 않거나 오히려 세정처리를 하지 않은 기판보다 증가되는 현상이 나타남을 알 수 있다.In addition, in the case of Comparative Example 4 containing an azole anticorrosive agent compared to Comparative Example 1, even if the used azole anticorrosive agent is adsorbed on the copper surface and the contaminants are removed by washing, the change in contact angle is not large or rather increased than that of the non-cleaning substrate. It can be seen that the phenomenon appears.
Claims (9)
하기 화학식 2로 표시되는 히드록실아민 화합물;
수용성 유기용매;
유기인산 또는 유기인산의 염; 및
물을 포함하는 것을 특징으로 하는 평판표시장치용 세정제 조성물:
<화학식 1>
<화학식 2>
상기 화학식 1 및 화학식 2에서,
R1은 C1~C3의 직쇄 또는 분지쇄 히드록시알킬기, C1~C3의 직쇄 또는 분지쇄 티올알킬기, 또는 티올기이고;
R2 및 R3는 각각 독립적으로 수소, C1~C4의 알킬기, C1~C4의 히드록시알킬기, C6~C10의 아릴기, C2~C4의 알콕시로 치환된 C1~C4의 알킬기, C2~C4의 알콕시를 포함하는 알콕시알칸올기이고;
이때, R1과 R2가 서로 결합하여 원자수 5 및 6의 환을 형성할 수 있고, 단, R3는 C1~C4의 히드록시알킬기는 아니고;
n은 1 내지 4의 정수이고,
R4 및 R5는 각각 독립적으로 C1~C10의 알킬기, C2~C10의 알케닐기, C1~C10의 히드록시알킬기, 카르복실기, 히드록시기로 치환 또는 비치환된 C1~C10의 알콕시기로 치환된 C1~C10의 알킬기, 페닐기 또는 벤질기이다.An alkoxyalkanolamine compound represented by Formula 1 below;
Hydroxylamine compound represented by the following formula (2);
Water-soluble organic solvents;
Organophosphoric acid or salts of organophosphoric acid; And
A cleaning composition for a flat panel display comprising water:
≪ Formula 1 >
(2)
In Chemical Formula 1 and Chemical Formula 2,
R 1 is a C 1 -C 3 straight or branched hydroxyalkyl group, a C 1 -C 3 straight or branched thiolalkyl group, or a thiol group;
R 2 and R 3 are each independently hydrogen, C 1 to C 4 alkyl group, C 1 to C 4 hydroxyalkyl group, C 6 to C 10 aryl group, C 2 to C 4 alkoxy substituted C 1 ~ C 4 alkyl group, an alkoxy alkane olgi containing alkoxy of C 2 ~ C 4;
At this time, R 1 and R 2 may be bonded to each other to form a ring having 5 and 6 atoms, provided that R 3 is not a C 1 to C 4 hydroxyalkyl group;
n is an integer of 1 to 4,
R 4 and R 5 are each independently a C 1 ~ C 10 alkyl group, C 2 ~ C 10 alkenyl group, C 1 ~ C 10 hydroxyalkyl group, a carboxyl group, a substituted or unsubstituted C 1 ~ C 10 ring to the hydroxyl group of the C 1 -C 10 alkyl, phenyl or benzyl group substituted with an alkoxy group.
조성물 총 중량에 대하여,
상기 화학식 1로 표시되는 알콕시알칸올아민 화합물 0.01~5중량%;
상기 화학식 2로 표시되는 히드록실아민 화합물 0.01~10중량%;
상기 수용성 유기용매 0.01~10중량%;
상기 유기인산 또는 유기인산의 염 0.001~5중량%; 및
상기 물 잔량을 포함하는 것을 특징으로 하는 평판표시장치용 세정제 조성물.The method according to claim 1,
With respect to the total weight of the composition,
0.01 to 5% by weight of an alkoxyalkanolamine compound represented by Formula 1;
0.01 to 10% by weight of a hydroxylamine compound represented by Formula 2;
0.01 to 10% by weight of the water-soluble organic solvent;
0.001 to 5% by weight of the organophosphoric acid or the salt of organophosphoric acid; And
The cleaning composition for a flat panel display comprising the remaining amount of water.
상기 화학식 1로 표시되는 알콕시알칸올아민 화합물과 상기 화학식 2로 표시되는 히드록실아민 화합물은 1:2~1:10의 중량비로 포함되는 것을 특징으로 하는 평판표시장치용 세정제 조성물.The method according to claim 1,
The alkoxyalkanolamine compound represented by Chemical Formula 1 and the hydroxylamine compound represented by Chemical Formula 2 may be included in a weight ratio of 1: 2 to 1:10.
상기 화학식 1로 표시되는 화합물은 아미노에톡시에탄올, 아미노프로폭시에탄올, 아미노부톡시에탄올, 디메틸아미노에톡시티올, 디에틸아미노에톡시티올, 디프로필아미노에톡시티올, 디부틸아미노에톡시티올, 디부틸아미노에톡시에탄올 디메틸아미노에톡시에탄올, 디에틸아미노에톡시에탄올, 디프로필아미노에톡시에탄올, 디부틸아미노에톡시에탄올, N-(메톡시메틸)몰포린, N-(에톡시메틸)몰포린, N-(메톡시에탄올)몰포린, N-(에톡시에탄올)몰포린 및 N-(부톡시에탄올)몰포린으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 평판표시장치용 세정제 조성물.The method according to claim 1,
Compound represented by Formula 1 is amino ethoxy ethanol, amino propoxy ethanol, amino butoxy ethanol, dimethyl amino ethoxy thiol, diethyl amino ethoxy thiol, dipropyl amino ethoxy thiol, dibutyl amino ethoxy thiol, Dibutylaminoethoxyethanol dimethylaminoethoxyethanol, diethylaminoethoxyethanol, dipropylaminoethoxyethanol, dibutylaminoethoxyethanol, N- (methoxymethyl) morpholine, N- (ethoxymethyl) Morpholine, N- (methoxyethanol) morpholine, N- (ethoxyethanol) morpholine and N- (butoxyethanol) morpholine Detergent composition for the device.
상기 화학식 2로 표시되는 화합물은 디메틸히드록실아민, 디에틸히드록실아민, 디부틸히드록실아민, 및 메틸페닐히드록실아민으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 평판표시장치용 세정제 조성물.The method according to claim 1,
The compound represented by the formula (2) is one or two or more selected from the group consisting of dimethyl hydroxyl amine, diethyl hydroxyl amine, dibutyl hydroxyl amine, and methyl phenyl hydroxyl amine for Detergent composition.
상기 수용성 유기용매는 에틸렌글리콜 모노메틸 에테르, 에틸렌글리콜 모노에틸 에테르, 에틸렌글리콜 모노이소프로필 에테르, 에틸렌글리콜 모노부틸 에테르, 디에틸렌글리콜 모노메틸 에테르, 디에틸렌글리콜 모노에틸 에테르, 디에틸렌글리콜 모노이소프로필 에테르, 디에틸렌글리콜 모노부틸 에테르, 트리에틸렌글리콜 모노메틸 에테르, 트리에틸렌글리콜 모노에틸 에테르, 트리에틸렌글리콜 모노이소프로필 에테르, 트리에틸렌글리콜 모노부틸 에테르, 폴리에틸렌글리콜 모노메틸 에테르, 폴리에틸렌글리콜 모노부틸 에테르, 프로필렌글리콜 모노메틸 에테르, 디프로필렌글리콜 모노메틸 에테르, 트리프로필렌글리콜 모노메틸 에테르, 프로필렌글리콜 모노메틸 에테르 아세테이트, N-메틸 피롤리돈(NMP), N-에틸 피롤리돈, 1,3-디메틸-2-이미다졸리디논, 1,3-디프로필-2-이미다졸리디논, γ?부티로락톤, 디메틸술폭사이드(DMSO), 술폴란, 트리에틸포스페이트, 트리부틸포스페이트, 디메틸카보네이트, 에틸렌카보네이토, 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-(2-히드록시에틸)아세트아미드, 3-메톡시-N,N-디메틸프로피온아미드, 3-(2-에틸헥실옥시)-N,N-디메틸프로피온아미드 및 3-부톡시-N,N-디메틸프로피온아미드로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 평판표시장치용 세정제 조성물.The method according to claim 1,
The water-soluble organic solvent is ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisopropyl Ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, Propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, N-methyl pyrrolidone (NMP), N-ethyl pyrrolidone, 1,3-dimethyl- 2- already Dazolidinone, 1,3-dipropyl-2-imidazolidinone, γ-butyrolactone, dimethyl sulfoxide (DMSO), sulfolane, triethyl phosphate, tributyl phosphate, dimethyl carbonate, ethylene carbonato, Formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3-methoxy 1 or 2 selected from the group consisting of -N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide and 3-butoxy-N, N-dimethylpropionamide The cleaning composition for flat panel display devices characterized by the above-mentioned.
상기 유기인산은 메틸디포스폰산, 아미노트리(메틸렌포스폰산), 에틸리덴디포스폰산, 1-히드록시에틸리덴-1,1-디포스폰산, 1-히드록시프로필리덴-1,1-디포스폰산, 1-히드록시부틸리덴-1,1-디포스폰산, 에틸아미노비스(메틸렌포스폰산), 1,2-프로필렌디아민테트라(메틸렌포스폰산), 도데실아미노비스(메틸렌포스폰산), 니트로트리스(메틸렌포스폰산), 에틸렌디아민비스(메틸렌포스폰산), 에틸렌디아민테트라(메틸렌포스폰산), 헥센디아민테트라(메틸렌포스폰산), 디에틸렌트리아민펜타(메틸렌포스폰산) 및 시클로헥산디아민테트라(메틸렌포스폰산)으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 평판표시장치용 세정제 조성물.The method according to claim 1,
The organophosphoric acid may be methyldiphosphonic acid, aminotri (methylenephosphonic acid), ethylidenediphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, 1-hydroxypropylidene-1,1- Diphosphonic acid, 1-hydroxybutylidene-1,1-diphosphonic acid, ethylaminobis (methylenephosphonic acid), 1,2-propylenediaminetetra (methylenephosphonic acid), dodecylaminobis (methylenephosphonic acid ), Nitrotris (methylenephosphonic acid), ethylenediaminebis (methylenephosphonic acid), ethylenediaminetetra (methylenephosphonic acid), hexenediaminetetra (methylenephosphonic acid), diethylenetriaminepenta (methylenephosphonic acid) and cyclohexane The cleaning composition for a flat panel display device characterized by the 1 type (s) or 2 or more types chosen from the group which consists of diamine tetra (methylene phosphonic acid).
상기 유기인산의 염은 유기인산의 칼륨염 또는 유기인산의 나트륨염인 것을 특징으로 하는 1종 또는 2종 이상인 것을 특징으로 하는 평판표시장치용 세정제 조성물. The method according to claim 1,
The salt of the organic phosphoric acid is one or two or more cleaning composition for a flat panel display, characterized in that the potassium salt of organic phosphoric acid or the sodium salt of organic phosphoric acid.
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WO2019156364A1 (en) * | 2018-02-06 | 2019-08-15 | 동우 화인켐 주식회사 | Mask cleaning liquid composition |
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KR20190018668A (en) * | 2017-02-14 | 2019-02-25 | 동우 화인켐 주식회사 | Cleaning solution composition |
WO2019156364A1 (en) * | 2018-02-06 | 2019-08-15 | 동우 화인켐 주식회사 | Mask cleaning liquid composition |
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