KR20100010827A - Light emitting diode and manufacturing method thereof - Google Patents

Light emitting diode and manufacturing method thereof Download PDF

Info

Publication number
KR20100010827A
KR20100010827A KR1020080071876A KR20080071876A KR20100010827A KR 20100010827 A KR20100010827 A KR 20100010827A KR 1020080071876 A KR1020080071876 A KR 1020080071876A KR 20080071876 A KR20080071876 A KR 20080071876A KR 20100010827 A KR20100010827 A KR 20100010827A
Authority
KR
South Korea
Prior art keywords
light emitting
layer
emitting diode
electrode
cladding layer
Prior art date
Application number
KR1020080071876A
Other languages
Korean (ko)
Inventor
류상완
Original Assignee
전남대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 전남대학교산학협력단 filed Critical 전남대학교산학협력단
Priority to KR1020080071876A priority Critical patent/KR20100010827A/en
Publication of KR20100010827A publication Critical patent/KR20100010827A/en

Links

Images

Landscapes

  • Led Devices (AREA)

Abstract

The present invention relates to a light emitting diode and a method of manufacturing the same, the light emitting diode having a first cladding layer, a light emitting layer, and a second cladding layer between electrodes, wherein the first cladding layer, the light emitting layer, and the second A substrate having a cladding layer formed therein, a groove formed by etching the second cladding layer and the light emitting layer to a predetermined depth so that a predetermined region of the first cladding layer is exposed, an insulating layer formed on the groove, and an upper portion of the insulating layer Including the electrode formed therein has the effect of improving the luminous efficiency of the light emitting diode.

Description

LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to remove the light emitting layer formed in the lower region of the electrode and to form an insulating layer between the region and the electrode light emitting diode which can improve the light emitting efficiency of the light emitting diode And to a method for producing the same.

In general, nitride semiconductors are direct-transition type semiconductors having a wide energy band gap, and are very useful materials for manufacturing light emitting devices capable of realizing light emission from visible light to ultraviolet light.

The research on such nitride semiconductors has been progressing to a great extent in the 1990s with the successful development of high quality crystal growth technology using low temperature GaN buffer layer on sapphire substrate and the development of Mg-doped p-type GaN.

In particular, the successful development of white light emitting diodes combining high brightness blue light emitting diodes and fluorescent organic materials has been rapidly applied in next-generation environment-friendly lighting, energy industries, and high density optical recording media.

However, the light efficiency of light emitting diodes is still low compared to conventional light sources. Therefore, more research is needed to improve the light efficiency.

GaN light emitting diodes generally have p-type and n-type electrodes formed on the same surface as the epitaxial layer because of the insulating property of the sapphire substrate. The p-type metal electrode formed on the upper surface of the mesa structure is composed of a thin transparent metal layer or a conductive oxide layer and a thick metal layer for wire bonding formed thereon. Therefore, the lower portion of the p-type metal electrode composed of a thick metal layer causes light loss due to photon absorption.

In addition, the p-type semiconductor is thin and its electrical conductivity is small, causing current crowding around the metal electrode. Due to this current bias, there is a problem in that more photons are formed under an electrode having a larger light loss.

Accordingly, in order to improve the light efficiency of the light emitting diode, an InGaN-GaN multi-quantum well (MQW) light emitting diode chip having a SiO 2 current blocking film under the region where the p-type metal electrode is located has been recently proposed. .{references; C. Huh, JM Lee, DJ Kim, and SJ Park, "Improvement in lightoutput efficiency of InGaN / GaN multiple-quantum well light-emitting diodes by current blocking layer," J. Appl. Phys., Vol. 92, pp. 2248-2250, 2002}

1 is a cross-sectional view for describing a light emitting diode having a conventional current blocking film 170.

As shown in FIG. 1, a conventional light emitting diode includes a substrate 100, a first cladding layer 110, a light emitting layer 120, a second cladding layer 130, a transparent electrode 140, and first and second electrodes 150. And 160).

At this time, the current blocking layer 170 is further included in the second clad layer 130 under the region where the first electrode 150 is located.

The current blocking layer 170 may inject current only into a region where light can effectively escape to the outside, thereby minimizing a reduction in light efficiency of the light emitting diode.

However, since the conventional light emitting diode further includes a manufacturing process for forming a current blocking film, there is a problem that a complicated manufacturing process and a high manufacturing cost are required. In addition, the light emitting layer under the region in which the current blocking film is formed does not receive current, thereby absorbing photons generated in other regions, and as a result, the efficiency of the light emitting diode is reduced.

On the other hand, US Patent No. 6,777,717 also as a method for minimizing the reduction of the light efficiency of the light emitting diode, by inclining the lower portion of the region where the p-type metal electrode is located by forming a reflective layer filled with a dielectric such as SiO 2 in the etched region A technique for easily extracting photons formed under the metal electrode to the outside has been proposed.

However, this technique still has a problem in that the current is not injected into the light emitting layer under the reflective film is formed to absorb photons generated in other areas to reduce the efficiency of the light emitting diode.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to improve the light efficiency of a light emitting diode by removing the light emitting layer under the region where the electrode of the light emitting diode is located and forming an insulating layer between the region and the electrode. The present invention provides a light emitting diode and a method of manufacturing the same.

Another object of the present invention is to provide a light emitting diode and a method for manufacturing the same, which can reduce the manufacturing cost by simplifying the manufacturing process.

In order to achieve the above object, a first aspect of the present invention is a light emitting diode having a first cladding layer, a light emitting layer, and a second cladding layer between electrodes, wherein the first cladding layer, the light emitting layer, and A substrate on which a second clad layer is formed; A groove formed by etching the second clad layer and the light emitting layer to a predetermined depth so that a predetermined region of the first clad layer is exposed; An insulating layer formed on the groove; And to provide a light emitting diode comprising an electrode formed on the insulating layer.

Here, the size of the groove may be smaller, larger or the same as the size of the electrode, preferably, may be smaller or equal to the size of the electrode to improve the efficiency.

Preferably, the material forming the insulating layer may be SiO 2 or SiNx.

Preferably, a conductive transparent thin film may be further formed between the insulating layer and the electrode.

According to a second aspect of the present invention, in a method of manufacturing a light emitting diode having a first cladding layer, a light emitting layer, and a second cladding layer between electrodes,

Forming the first cladding layer, the light emitting layer, and the second cladding layer;

Forming a groove by etching the second clad layer and the light emitting layer to a predetermined depth so that a predetermined region of the first clad layer is exposed; And

It provides a light emitting diode manufacturing method comprising the step of forming an insulating layer and an electrode on the groove.

Here, the size of the groove may be formed to have a size smaller, larger or the same as the size of the electrode, preferably, may be formed to have a size smaller than or equal to the size of the electrode to improve the efficiency.

Preferably, the material forming the insulating layer may be SiO 2 or SiNx.

Preferably, the method may further include forming a conductive transparent thin film interposed between the insulating layer and the electrode.

According to the light emitting diode of the present invention and a method of manufacturing the same as described above, the light efficiency of the light emitting diode is formed by removing the light emitting layer for a predetermined region under the region where the electrode of the light emitting diode is located and forming an insulating layer between the region and the electrode. There is an advantage to improve.

In addition, the present invention has the advantage of reducing the manufacturing cost by simplifying the manufacturing process.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention illustrated below may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.

2 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 2, a light emitting diode according to an embodiment of the present invention is largely provided with a substrate 200, a first cladding layer 210, a light emitting layer 220, a second cladding layer 230, and a first electrode 240. And a second electrode 250.

Here, the substrate 200 may be formed using, for example, a sapphire substrate, and the like, but is not limited thereto. If applicable to a light emitting diode according to an embodiment of the present invention, a substrate other than the sapphire substrate may be used. Do.

The first cladding layer 210, the light emitting layer 220, and the second cladding layer 230 may be formed using, for example, n-type GaN, InGaN / GaN, and p-type GaN, but are not limited thereto.

In this case, a predetermined depth formed by removing the second cladding layer 230 and the light emitting layer 220 to expose the first cladding layer 210 to the outside in a predetermined region of the light emitting layer 220 including the second cladding layer 230. The groove H is formed.

Here, the size of the groove (H) may be formed to have a size smaller, larger, or the same as the size of the first electrode 240, preferably, the size of the first electrode 240 to improve the efficiency It may be formed to have a smaller or the same size.

The groove H may be formed by sequentially etching the light emitting layer 220 from the second cladding layer 230 using, for example, photolithography or the like. In addition, an insulator thin film formed of a material such as SiO 2 or SiNx, that is, an insulating layer 260 is stacked on the groove H.

The first and second electrodes 240 and 250 may be formed using any one of, for example, an electron beam (E-Beam) deposition, a thermal evaporation, or sputtering.

For example, the first and second electrodes 240 and 250 are deposited using a metal of either Ti / Ni / Au or Pd / Au, and then, for example, in a furnace of an atmosphere containing nitrogen or oxygen. It may be formed by heat treatment at a temperature of about 500 ℃. In this case, the first electrode 240 is formed on the insulating layer 260.

When the first electrode 240 is formed as, for example, an opaque electrode, light emitted from the light emitting diode to the outside cannot effectively escape to the outside in the region where the first electrode 240 is formed.

Accordingly, by forming the insulating layer 260 under the first electrode 240, it is possible to inject a current only in a region where light can effectively escape to the outside, and in the lower portion of the region where the first electrode 240 is formed. By removing the light emitting layer 220, it is possible to suppress photon absorption of the light emitting layer with respect to the region where the insulating layer is formed, thereby improving the light efficiency of the light emitting diode.

On the other hand, in order to increase the current injection area and not adversely affect the brightness, before forming the first electrode 240 on the second clad layer 230, a conductive transparent thin film, that is, a transparent electrode (270) (270) Further, the transparent electrode 270 may be formed using, for example, thin Ni / Au or indium tin oxide (ITO).

Next, a method of manufacturing a light emitting diode according to an embodiment of the present invention will be described in detail.

Referring to FIG. 2, a first clad layer is formed on a substrate (eg, a sapphire substrate) 200 using metal organic chemical vapor deposition (MOCVD), liquid epitaxial (LPE), molecular beam epitaxial (MBE), or the like. An epi substrate on which the 210, the light emitting layer 220, and the second cladding layer 230 are sequentially stacked is prepared.

Subsequently, a predetermined region of the second clad layer 230 is etched by using a method such as photolithography on the second clad layer 230. In this case, the light emitting layer (eg, the first clad layer 210 is exposed to the outside). The 220 is etched together to form a groove H having a predetermined depth.

At this time, the size of the groove (H) may be formed to have a size smaller, larger or the same as the size of the first electrode 240 to be described later, preferably, the first electrode 240 to improve the efficiency It may be formed to have a size less than or equal to the size of.

Thereafter, for example, an insulator thin film, that is, an insulating layer 260 is stacked on the groove H. The insulating layer 260 may be formed using, for example, a material such as SiO 2 or SiNx.

Thereafter, for example, the conductive transparent thin film, that is, the transparent electrode 270 is formed on the entire upper portion. Next, the upper surface of the first cladding layer 210 is exposed by dry etching the second cladding layer 230 and the light emitting layer 220 corresponding to the predetermined region.

Finally, first and second electrodes 240 and 250 are formed to apply a predetermined voltage to the top surface of the transparent electrode 270 and the top surface of the exposed first clad layer 210, respectively. In this case, the first electrode 240 is formed on the insulating layer 260.

3 is a schematic cross-sectional view of a light emitting diode according to another exemplary embodiment of the present invention, and illustrates a structure in which the second electrode 350 is formed below the light emitting diode.

Referring to FIG. 3, the light emitting diode according to another embodiment of the present invention is largely the same as that of FIG. 2 described above, with the substrate 200, the first cladding layer 210, the light emitting layer 220, and the second cladding layer 230. And a first electrode 240 and a second electrode 350.

However, in FIG. 3, unlike FIG. 2, the second electrode 350 is formed below the light emitting diode, for example, on the bottom surface of the substrate 200. In this case, the substrate 200 is preferably formed of a material such as GaAs as a semiconductor substrate, but is not limited thereto.

Meanwhile, in a predetermined region of the light emitting layer 220 including the second cladding layer 230, the first cladding layer 210 is exposed to the outside to remove the second cladding layer 230 and the light emitting layer 220. The groove H is formed.

Here, the size of the groove (H) may be formed to have a size smaller, larger, or the same as the size of the first electrode 240, preferably, the size of the first electrode 240 to improve the efficiency It may be formed to have a smaller or the same size.

The groove H may be formed by sequentially etching the light emitting layer 220 from the second cladding layer 230 using, for example, photolithography or the like. In addition, an insulator thin film formed of a material such as SiO 2 or SiNx, that is, an insulating layer 260 is stacked on the groove H, and a first electrode 240 is formed on the insulating layer 260. .

In this case, in order to increase the current injection area and not adversely affect the brightness, before the first electrode 240 is formed on the second clad layer 230, a conductive transparent thin film, ie, a transparent electrode 270, is formed. Further, the transparent electrode 270 may be formed using, for example, thin Ni / Au or indium tin oxide (ITO).

In this embodiment, the light emitting diode has a structure in which an electrode is formed on the p-type GaN cladding layer and the n-type GaN cladding layer formed by etching the light emitting layer in a predetermined region, and a structure in which the electrode is formed on the lower surface of the light emitting diode, that is, on the lower surface of the semiconductor substrate. Although the present invention has been described as an example, the application of the present invention is applicable to any light emitting diode formed on a substrate including first and second cladding layers, a light emitting layer, and the like provided between the electrodes. That is, the present invention should be understood as being applicable to any structure in which a potential difference is formed in the light emitting layer by the electrodes or a current is injected to generate the light emitting phenomenon.

Although a preferred embodiment of the light emitting diode according to the present invention and a method for manufacturing the same has been described above, the present invention is not limited thereto, and various modifications are made within the scope of the claims and the detailed description of the invention and the accompanying drawings. It is possible to implement and this also belongs to the present invention.

1 is a cross-sectional view illustrating a conventional light emitting diode having a current blocking film.

2 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the present invention.

3 is a schematic cross-sectional view of a light emitting diode according to another embodiment of the present invention.

Claims (8)

In the light emitting diode provided with a first cladding layer, a light emitting layer, and a second cladding layer between the electrodes, A substrate on which the first cladding layer, the light emitting layer, and the second cladding layer are formed; A groove formed by etching the second clad layer and the light emitting layer to a predetermined depth so that a predetermined region of the first clad layer is exposed; An insulating layer formed on the groove; And A light emitting diode comprising an electrode formed on the insulating layer. According to claim 1, The groove has a size smaller than or equal to that of the electrode. According to claim 1, The material for forming the insulating layer is a light emitting diode, characterized in that SiO 2 or SiNx. According to claim 1, A light emitting diode, characterized in that the conductive transparent thin film is further formed between the insulating layer and the electrode. In the method of manufacturing a light emitting diode comprising a first cladding layer, a light emitting layer, and a second cladding layer between the electrodes, Forming the first cladding layer, the light emitting layer, and the second cladding layer; Forming a groove by etching the second clad layer and the light emitting layer to a predetermined depth so that a predetermined region of the first clad layer is exposed; And And forming an insulating layer and an electrode on top of the groove. The method of claim 5, The groove has a size smaller than or equal to that of the electrode, the manufacturing method of the light emitting diode, characterized in that formed. The method of claim 5, The material for forming the insulating layer is a method of manufacturing a light emitting diode, characterized in that SiO 2 or SiNx. The method of claim 5, The method of manufacturing a light emitting diode further comprising the step of forming a conductive transparent thin film interposed between the insulating layer and the electrode.
KR1020080071876A 2008-07-23 2008-07-23 Light emitting diode and manufacturing method thereof KR20100010827A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080071876A KR20100010827A (en) 2008-07-23 2008-07-23 Light emitting diode and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080071876A KR20100010827A (en) 2008-07-23 2008-07-23 Light emitting diode and manufacturing method thereof

Publications (1)

Publication Number Publication Date
KR20100010827A true KR20100010827A (en) 2010-02-02

Family

ID=42085417

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080071876A KR20100010827A (en) 2008-07-23 2008-07-23 Light emitting diode and manufacturing method thereof

Country Status (1)

Country Link
KR (1) KR20100010827A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102208506A (en) * 2010-03-30 2011-10-05 厦门乾照光电股份有限公司 Buried high-brightness light emitting diode structure
WO2011142619A2 (en) * 2010-05-13 2011-11-17 주식회사 에피밸리 Group iii nitride semiconductor light emitting element
US8314422B2 (en) 2010-04-08 2012-11-20 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system
US8421106B2 (en) 2009-09-10 2013-04-16 Lg Innotek Co., Ltd. Light emitting device, system and package
KR20160085069A (en) * 2015-01-07 2016-07-15 엘지이노텍 주식회사 Light emitting device and light emitting device package
KR20210070834A (en) * 2019-12-05 2021-06-15 웨이브로드 주식회사 Light emitting device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8421106B2 (en) 2009-09-10 2013-04-16 Lg Innotek Co., Ltd. Light emitting device, system and package
CN102208506A (en) * 2010-03-30 2011-10-05 厦门乾照光电股份有限公司 Buried high-brightness light emitting diode structure
US8314422B2 (en) 2010-04-08 2012-11-20 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system
WO2011142619A2 (en) * 2010-05-13 2011-11-17 주식회사 에피밸리 Group iii nitride semiconductor light emitting element
WO2011142619A3 (en) * 2010-05-13 2012-04-26 주식회사 에피밸리 Group iii nitride semiconductor light emitting element
KR20160085069A (en) * 2015-01-07 2016-07-15 엘지이노텍 주식회사 Light emitting device and light emitting device package
KR20210070834A (en) * 2019-12-05 2021-06-15 웨이브로드 주식회사 Light emitting device

Similar Documents

Publication Publication Date Title
US7385226B2 (en) Light-emitting device
US6958494B2 (en) Light emitting diodes with current spreading layer
JP4449113B2 (en) 2D display device
CN101807650B (en) Gallium nitride-based high-brightness light-emitting diode and its manufacture craft with distributed Bragg reflecting layer
US9825203B2 (en) Light emitting diode chip and fabrication method
JP2006310785A (en) Light emitting diode for suppressing lateral current and manufacturing method thereof
JP4505147B2 (en) Semiconductor structure and processing method using group III nitride quaternary material system with little phase separation
KR100687783B1 (en) Light-emitting device
KR100649496B1 (en) Nitride semiconductor light emitting device and method of manufacturing the same
US20130015465A1 (en) Nitride semiconductor light-emitting device
JP2011228628A (en) Light-emitting devices with vertical light-extraction mechanism and the method for fabricating the same
US10381804B2 (en) Vertical cavity light emitting element
KR20100010827A (en) Light emitting diode and manufacturing method thereof
CN102117870A (en) Vertical light emitting diode and manufacturing method of the same
JP4332407B2 (en) Semiconductor light emitting device and manufacturing method thereof
JP2007184585A (en) Semiconductor light-emitting element and manufacturing method therefor
JP4837012B2 (en) Light emitting element
US20240136469A1 (en) Light-emitting element and manufacturing method thereof
JP2009289801A (en) Light-emitting device and method of manufacturing the same
JP4288030B2 (en) Semiconductor structure using group III nitride quaternary material system
JP2014187196A (en) Nitride semiconductor light-emitting device
JP2012080104A (en) Semiconductor light-emitting element and manufacturing method therefor
KR100648812B1 (en) Galium-nitride light emitting diode and method of fabricating the same
US20080175293A1 (en) Semiconductor laser device
Kim Improvement of GaN-based light-emitting diode by indium-tin-oxide transparent electrode and vertical electrode

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application