KR20040045750A - Chemical vapor deposition with high density plasma - Google Patents

Abstract

PURPOSE: A high density plasma type CVD(Chemical Vapor Deposition) apparatus is provided to be capable of reducing the generation of arc and decreasing the generation of particles due to the arc. CONSTITUTION: A high density plasma type CVD apparatus is provided with a process chamber(102) having a wafer support part(101) for loading a wafer(W), a cover(103) for covering the upper portion of the process chamber, and a gas ring part(111) installed between the process chamber and the cover for flowing process gas onto the wafer. At this time, a plurality of nozzles are installed at the gas ring part. The high density plasma type CVD apparatus further includes an arc generation preventing layer(130) installed at the inner walls of the process chamber and the gas ring part. Preferably, the arc generation preventing layer is made of non-conducting material. Preferably, the arc generation preventing layer is made of AlN or Al2O3.

Description

High Density Plasma Chemical Vapor Deposition Equipment {CHEMICAL VAPOR DEPOSITION WITH HIGH DENSITY PLASMA}

The present invention relates to a chemical vapor deposition apparatus, and more particularly to a chemical vapor deposition apparatus having an arc generation prevention function for preventing the generation of arcs in the chamber.

Chemical Vapor Deposition (CVD) is a device for forming a film such as an insulating film by a chemical reaction in the gas phase on a semiconductor substrate, and various forms have been developed depending on the reaction gas, pressure, and temperature used.

One of them is a high density plasma chemical vapor deposition apparatus (1).

Fig. 1 is an overall configuration diagram schematically showing the configuration of the above-described conventional high density plasma chemical vapor deposition apparatus 1, which includes a processing chamber 3 for forming a predetermined processing space, and the processing chamber ( It consists of the cover 4 which covers the upper side of 3).

An upper portion of the lid 4 includes a heating plate 5a for setting the temperature of the lid 4, a cooling plate 5b, and a support plate 6.

In the processing chamber 3, a supporting member 7 for supporting a wafer W, which is a substrate to be processed, is provided, and the supporting member 7 has an electrostatic chuck 8 for fixing the wafer W. A pump 11 is provided below the processing chamber 3 to exhaust the pressure inside the processing chamber 3 under reduced pressure.

A top coil 12t and a side coil 12s are attached to an outer surface of the cover 4, and the top coil 12t and the side coil 12s are source power sources 14t and 14s for applying high frequency power for a source. ) Is connected.

In addition, a bias power source 16 is connected to the support member 7 so that a plasma is drawn into the surface of the wafer W in the processing chamber 3 by applying a high frequency bias power.

A first gas introducing portion 18 is provided at an upper portion of the processing chamber 3 to introduce a film forming gas into the processing chamber 3 from above, and the first gas introducing portion 18 is formed of the wafer W. The first nozzle 20 for injecting gas to the upper surface is installed.

Next, a second gas introduction portion 21 for introducing a film forming gas into the processing chamber 3 from the side is provided at the upper portion of the processing chamber 3.

The second gas introducing portion 21 is provided with a gas ring member 23 provided with a plurality of gas supply grooves 23a therein, on the upper portion of the processing chamber 3, and the gas supply groove 23a. In communication therewith, a plurality of second nozzles 24 are connected to the inside of the processing chamber 3 so that the gas is injected into the wafer W edge portion.

However, in the conventional high density plasma type chemical vapor deposition apparatus 1 configured as described above, arc (ARC) is generated in the upper wall of the gas ring member 23 and the processing chamber 3, and thus the production yield of the semiconductor device and There is a problem of lowering the characteristics of the device.

As described above, the cause of the arc ARC is generated in the upper wall of the gas ring member 23 and the processing chamber 3. The gas ring member 23 and the processing chamber 3 are made of aluminum (Al). Will occur.

In more detail, a predetermined film L is also applied to the interior of the process chamber 3, that is, the inner wall of the processing chamber 3, the inner wall of the gas ring member 23, and the like, when the film is formed on the upper surface of the wafer W. Will be formed.

By the way, the film L is not uniformly formed but there is a locally thin portion (shown in FIG. Will occur.

In addition, if the arc is continuously generated, the inner wall of the processing chamber 3 or the gas ring member 23 formed of aluminum is shaved, and thus the particles are scattered toward the wafer W, thereby acting as a particle causing factor.

Examples of such arcing are shown in FIGS. 2 and 3.

FIG. 2 is a view showing a trace S in which an arc has occurred on an upper side of an inner wall of the processing chamber 3, and FIG. 3 shows a particle P caused by arc generation as described above on the upper surface of the wafer W. As shown in FIG. It is the figure which expanded and showed the example which fell to the upper surface of (W).

Accordingly, the present invention has been made to solve the above problems, an object of the present invention is to reduce the arc generation factors by coating the interior of the predetermined plasma processing space with a non-conductor or by changing the material of the processing chamber and the gas ring member. In addition, the present invention provides a high-density plasma type chemical vapor deposition apparatus that improves the yield of semiconductor devices and improves device characteristics by reducing particle incidence caused by arc generation.

In order to achieve the above object, the present invention provides a chuck for mounting a wafer therein and a processing chamber for forming a predetermined processing space; A cover installed on the upper side of the processing chamber to cover the upper side of the processing chamber; And a gas ring member provided between the processing chamber and the cover, the gas ring member having a plurality of nozzles for injecting a process gas to the wafer side, wherein the inner wall and the gas ring member of the processing chamber are formed. The inner wall is characterized in that the arc generation prevention film is provided.

The arc generation prevention film is made of AlN or Al ₂ O ₃ as a non-conductive material having excellent heat resistance and corrosion resistance.

The arc generation prevention film is provided on the upper side on which the wafer is seated, and is coated on the inner wall of the processing chamber or the inner wall of the gas ring part member by coating;

The arc generation prevention film is made of a thin film having a band shape corresponding to the inner wall shape of the processing chamber or the seating ring member and fixed to the inner wall thereof.

In addition, as another example of performing the arc generation prevention function there is provided a chuck for seating the wafer therein and the processing chamber to form a predetermined processing space; A cover installed on the upper side of the processing chamber to cover the upper side of the processing chamber; And a gas ring member provided between the processing chamber and the cover, the gas ring member having a plurality of nozzles for injecting a process gas to the wafer, wherein the inner wall and the gas ring member of the processing chamber have excellent heat resistance and corrosion resistance. Made of non-conductive ceramic.

1 is a view showing a schematic configuration of a conventional high density plasma type chemical vapor deposition apparatus,

FIG. 2 is a view illustrating a trace in which an arc is generated on an upper inner wall of the processing chamber of FIG. 1;

3 is an enlarged view illustrating a state in which an arc is generated and particles are generated on an upper surface of a wafer by the configuration of FIG. 1;

Figure 4 is a partial cross-sectional view showing the configuration of a high-density plasma type chemical vapor deposition apparatus according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

101: wafer support W: wafer

102 treatment chamber 103 cover

111 gas ring member 113 second gas supply nozzle

130: arc generation prevention film

Hereinafter, the configuration and operation of the present invention will be described in detail with reference to FIG. 4.

As shown in FIG. 4, a processing chamber 102 is provided with a wafer support 101 for forming a predetermined processing space and seating and supporting the wafer W in the processing space, and on the upper surface of the processing chamber 101. It consists of the cover 103 provided so that opening and closing is possible.

On the upper side of the lid 103 is composed of a heating plate 105a for setting the temperature of the lid 103, a cooling plate 105b, and a support plate 106.

In the central portion of the cover 103, a plurality of gas supply grooves 108a are provided therein, and a first gas supply unit 108 having a first gas supply nozzle 108b at the bottom thereof is provided, and the processing chamber A second gas supply unit 110 is provided between the 101 and the cover 103 to supply a process gas to the edge of the wafer W seated on the wafer support 101.

The second gas supply unit 110 is formed of a gas ring member 111 in which a plurality of ring-shaped gas supply grooves 111a are provided therein, and communicates with the gas supply grooves 111a to a plurality of inner circumferential surfaces thereof. The second gas supply nozzle 113 is installed.

In the above-described configuration, an arc generation prevention layer 130 is provided on the inner walls of the gas ring member 111 and the processing chamber 101.

The arc generation prevention film 130 has heat resistance that is stable to temperature changes in a temperature range of 25 ° C. to 800 ° C., for example, and a clean gas for cleaning the inside of the processing chamber 3, such as NF ₃ or C ₂ H ₈ or C ₃ H _8. It is preferable to use a material having a strong corrosion resistance and the like and a non-conductive material.

Examples are AlN or Al ₂ O ₃ .

Next, the arc generation prevention film 130 is provided by coating with the above-described material, that is, by covering the inner wall of the gas ring member 111 or the processing chamber 102 or the gas ring member 111 or the treatment. It is manufactured in the form of a band corresponding to the shape of the inner wall of the chamber 102 and may be provided by adhesive fixing to the inner wall using a separate adhesive.

Next, in the above description, in order to prevent the generation of arcs, a separate arc generation prevention film 130 has been described as an example configured on the inner wall of the gas ring member 111 or the processing chamber 102, but is not limited thereto. The gas ring member 111 or the processing chamber 102 itself may be made of a ceramic material having heat resistance, corrosion resistance, and non-conductivity.

In the drawings, reference numerals 107t and 107s denote top coils and side coils to which high frequency power is applied.

As described above, the present invention may further comprise an arc generation prevention film made of a material having non-conductivity and excellent heat resistance and corrosion resistance on the inner wall of the processing chamber or the gas ring member, or the treatment chamber and the gas ring member with the above-described material. By directly forming and forming, it is possible to effectively prevent the generation of arcs in the plasma processing.

As described above, the prevention of arc generation has the advantage of improving semiconductor device production yield and improving semiconductor device characteristics.

As described above, in the detailed description of the present invention, specific embodiments have been described. However, various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims below and equivalents thereof.

Claims (9)

A processing chamber configured to provide a wafer support on which the wafer is seated and supported, and to form a predetermined processing space; A cover installed on the upper side of the processing chamber to cover the upper side of the processing chamber; And In the high-density plasma type chemical vapor deposition apparatus provided between the processing chamber and the cover comprising a gas ring member provided with a plurality of nozzles for injecting a process gas to the wafer side, High density plasma type chemical vapor deposition apparatus, characterized in that the inner wall of the processing chamber and the inner wall of the gas ring member is provided with an arc generation prevention film. The method of claim 1, The arc generation prevention film is a high density plasma type chemical vapor deposition apparatus, characterized in that the non-conductive material The method of claim 1, The arc generation prevention film is a high-density plasma type chemical vapor deposition apparatus, characterized in that the heat-resistant material. The method of claim 1, The arc generation prevention film is a high-density plasma type chemical vapor deposition apparatus, characterized in that the corrosion resistant material. The method of claim 1, The arc generation prevention film is a high density plasma type chemical vapor deposition apparatus, characterized in that the AlN or Al ₂ O ₃ material. The method of claim 1, The arc generation prevention film is a high density plasma type chemical vapor deposition apparatus, characterized in that provided on the upper side on which the wafer is seated. The method of claim 1, The arc generation prevention film is a high density plasma type chemical vapor deposition apparatus, characterized in that the coating is coated on the inner wall of the processing chamber or the inner wall of the gas ring member. The method of claim 1, The arc generation prevention film is made of a thin film having a band shape corresponding to the inner wall shape of the processing chamber or the riding ring member is dense plasma type chemical vapor deposition apparatus, characterized in that fixed to the inner wall. A processing chamber which is provided with a wafer support for seating and supporting the wafer therein and forms a predetermined processing space; A cover installed on the upper side of the processing chamber to cover the upper side of the processing chamber; And In the high-density plasma type chemical vapor deposition apparatus provided between the processing chamber and the cover comprising a gas ring member provided with a plurality of nozzles for injecting a process gas to the wafer side, The inner wall and the gas ring member of the processing chamber is a high-density plasma type chemical vapor deposition apparatus, characterized in that the material is made of a ceramic having excellent heat resistance, corrosion resistance and non-conductivity.