KR20010042965A - Method and apparatus for monitoring plasma processing operations - Google Patents

Abstract

The present invention relates generally to various forms of plasma treatment and, more particularly, to monitoring such plasma treatment. One form relates to at least some method for calibration or initialization of the plasma monitoring assembly. The type of correction may be used to indicate wavelength changes, intensity changes, or both related to the optical emission obtained in the plasma process. The correction light is directed to the window through the optical emission data obtained to determine the influence, if the inner surface of the window or the operation of the optical emission data collection device sometimes affects the acquired optical emission data. Delivered. Other forms relate to evaluation of various forms of at least some manner performed on the plasma treatment carried out. Plasma condition assessment and process identification through optical emission analysis are included in this form. Another form related to the present invention is at least slightly to the end point of the plasma treatment (e.g., plasma recipe, plasma cleaning, controlled wafer operation) or its separated / identifiable portion (one plasma step of several stages of plasma recipe). It's about the way. Another aspect related to the present invention is how to implement one or more of the forms shown above in a semiconductor manufacturing facility, such as the distribution of wafers to a wafer production system. The final form of the present invention relates to a network of multiple plasma monitoring systems including remote capabilities (ie, outside the clean room).

Description

METHOD AND APPARATUS FOR MONITORING PLASMA PROCESSING OPERATIONS}

Plasma is used for several types of industrial-type processing in the semiconductor and printed wiring board industries, as well as in many other industries such as in the medical equipment and automotive industries. One commonly used plasma is for etching materials in an isolated or controlled environment. One or more objects of various types may include glass, silicon or other substrate materials, organic materials such as photoresist, waxes, plastics, rubber, biological media and vegetation, and metals such as aluminum, titanium, tungsten and gold. Etched by the plasma composite. Plasma is also used to deposit materials such as organics and metals onto suitable surfaces by various techniques, such as through chemical vapor deposition. In addition, a sputtering operation uses plasma to cause the material to protrude from a source (eg, metal, organic material) to produce ions deposited on a target such as a substrate. Surface modification operations include surface cleaning, surface activation, surface passivation, surface roughening, surface smoothing, micromachining, and hardening. Plasma is used which includes operations such as hardening and patterning.

Plasma processing operations can have a significant impact on a company's profit margins. This is especially true for semiconductors and printed wiring boards. Consider that a single semiconductor manufacturing facility has up to 200-300 processing chambers, and in commercial production each processing chamber processes at least about 15-20 wafers per hour. In addition, in some cases, 8-inch wafers processed in one of these chambers are used to produce up to 1500 semiconductor chips worth at least $ 125 each, and each of these semiconductor chips is in fact "pre-sold." Suppose Then, if one wafer has been subjected to abnormal plasma processing or discarded, a total loss of at least $ 187,500 will occur.

The particular plasma processing that operates on a wafer, such as a semiconductor device is formed, is generally referred to as a plasma recipe. One of ordinary skill in the art regards a plasma recipe as a combination of one or more plasma steps, each executed for a fixed time period. However, as used in connection with the present invention, "plasma recipe" means a plasma processing protocol that includes one or more plasma steps (eg, some combination of steps) that are different and distinct. "Different and distinct" means that each plasma step produces a different result preset to the product to be processed. Differences between plasma stages can be realized by changing one or more processing conditions including, without limitation, plasma composition, temperature and pressure, DC bias, pumping speed and power settings in the processing chamber. The results of each plasma step as well as the sequence of plasma steps also produce the end result of the required synthesis or accumulation for the plasma recipe.

Plasma treatment is carried out on wafers in commercial manufacturing equipment in the following manner. A cassette or boat for storing a plurality of wafers 24 is provided at a location accessible by a wafer handling system connected to one or more processing chambers. Some chambers may accommodate more than one wafer at a time for simultaneous plasma processing, but in this chamber one wafer is processed at a time. One or more qualification wafers are contained in each cassette, and the rest are commonly referred to as production wafers. The verification and production wafers are exposed in the same plasma treatment in the chamber. However, while semiconductor devices are made on production wafers, semiconductor devices are not made on verification wafers because verification wafers are only processed and used to test / evaluate plasma processing. Before the semiconductor device is actually made on such a production wafer, another processing operation of the current plasma processed production wafer is required.

Monitoring is used to evaluate a process from one or more points of view in many plasma processes. One common monitoring technique related to plasma recipes performed on wafers is endpoint detection. Current end point detection systems are identified as the time when a single plasma step in any plasma recipe is completed, and more specifically, when the set result associated with the plasma step is produced on the product. The expression "set" result is when one of the layers of wafers has been completely removed in a manner determined by a mask or the like. Conventional systems allow identification of the end point of one of the various stages of the plasma recipe, but systems capable of identifying the end point of each of the various stages of the plasma recipe, or even the end point of any two of the stages, Not known

Having the ability to end a given plasma step after the end point or the end point to be reached can reduce the cost in many ways. Clearly, the amount of gas used to generate the plasma can be reduced by terminating any plasma step when the required results have been achieved. More importantly, terminating any plasma step after a short time at or at the end point of arrival prevents the wafer from over-etching to an undesired extent. Over-etching the wafer, such as etching a portion of the layer immediately following the etch, removes more material from the wafer than is required, and also results in unwanted results that the material sticks out to other portions of the wafer. The impact on the semiconductor device made from such wafers may degrade the quality of the semiconductor device and, if the semiconductor is defective or incomplete, may not be detected until the semiconductor device is delivered to a customer who does not want it. Finally, slight wafer over-etching results in damaging the wafer.

Endpoint detection is theoretically preferred for plasma processing. This deficiency becomes evident when trying to implement endpoint detection techniques in commercial manufacturing facilities. First, all known endpoint detection techniques have been developed by chemically analyzing the plasma behavior first to identify wavelengths that are tailored when representing the endpoint. Typically, a manufacturing facility executes a number of plasma recipes. This well known endpoint detection technique adds cost because it needs to maintain skilled speakers. In addition, these techniques often do not produce intentional results. That is, because the wavelength chosen by the chemist is based only on "theory," in fact, it is impossible to represent all of the end points when the plasma step is actually executed. Any endpoint detection technique may also be dependent on the processing chamber implementing the technique. Accurate results are not realized when the endpoint detection technique is used in other processing chambers. Thus, the plasma monitoring system can be reduced in “pre-analysis” chemical amount and can be operated to an acceptable level on multiple processing chambers (ie, common plasma monitoring systems capable of identifying associated endpoints). It is preferable.

Commonly used endpoint detection techniques provide no information about how plasma processing was actually performed or about the "(health)" of the plasma processing-when the end point of the plasma step was reached. Other monitoring techniques commonly used in plasma processing have this same type of drawback. The pressure, temperature and flow rate of the feed gas used to make the plasma are usually monitored. In addition, various types of related electrical systems associated with the plasma, such as power settings to be used, will also be monitored, as this will affect the operation of the plasma. However, this type of monitoring operation does not necessarily provide an indication of how the plasma processing actually proceeded. Although all settings of "hardware" are correct, the plasma may still not perform correctly for a variety of reasons (e.g., "unhealthy" plasma). Since errors in plasma processors are typically detected by some type of post-processing, such as destructive testing techniques, many wafers are typically subjected to defective plasma processing before the error is actually identified or eliminated. Exposed. Therefore, it is desirable to have a plasma monitoring system that can provide more accurate indications of how current plasma processing proceeds in "real-time", thereby reducing the number of wafers exposed to abnormal plasma processing. Do. It is also desirable to have a plasma monitoring system capable of identifying the presence of errors in plasma processing before at least the next wafer is exposed to an "abnormal" plasma processor or the like.

Other areas of semiconductor manufacturing processing may adversely affect the profit margins of commercial manufacturing facilities. Often the operator can execute the wrong plasma recipe, resulting in the wafer being discarded. To avoid this type of situation, a plasma monitoring system is desirable that can quickly identify the plasma recipe to be executed in a given chamber. In addition, the length of each step of any plasma recipe is typically set for an amount of time that takes into account the worst case state (such as ending in this time frame with the execution of the "lowest speed" of the plasma step). In many cases, the step results in a problem identified in the discussion of endpoint detection, so that it will actually end at a significant time before reaching this maximum setting. Thus, as it will be executed in the processing chamber, it identifies the steps of the plasma recipe and includes information related to the control of the plasma processor (eg, ending the current step, starting the next plasma step, or both). It is desirable to have a plasma monitoring system that can utilize.

Plasma processing (eg, wafers) of the product in the processing chamber easily affects the interior of the processing chamber which will adversely affect the next plasma recipe performed on the product in that chamber. Some "byproducts" of plasma processing going to the product within the chamber may be deposited on one or more interior surfaces of the chamber. Such deposition may be performed on one or more plasma recipes (eg, treatments) to be performed within the processing chamber. The chamber is used to perform in the form of one or more plasma recipes), which has some type of adverse effect: deposition on the inner surface of the processing chamber can have an effect on the performance of the chamber, as illustrated below. Longer time periods are required to reach the end point of one or more plasma steps of the recipe, the end point of one or more plasma steps is not reached, or unexpected results are realized in the current plasma step. (E.g. unexpected / undesired results) The chamber is actually for cleaning Regardless of whether the chamber was previously ready for cleaning, the processing chamber is typically moved from the production line according to a periodic schedule based on the cleaning operation indicating the condition indicated above. It is desirable to have a plasma monitoring system that can indicate if it should be moved out of the line.

The cleaning operation used to direct the deposition indicated above may be performed by the plasma cleaning inside the processing chamber, the wet cleaning inside the processing chamber, and the plasma treatment to actually remove certain components of the processing chamber, commonly referred to as "comsumables." Plasma cleaning typically involves the deposition indicated above by executing the appropriate plasma in the processing chamber, with no product (e.g., without production wafers) and thus with the chamber "empty". The plasma acts on this deposition in the plasma cleaning and reduces the thickness due to chemical activity, mechanical activity or both The resulting vapor and particulate material is discharged from the chamber during the plasma cleaning. Accurately dictate the health and end points of cleaning Preferably it includes a plasma monitoring system.

In some cases, plasma cleaning can only indicate the state inside the processing chamber. Other cleaning techniques that can be applied alone or in combination with plasma cleaning are commonly referred to as "wet cleaning." Various kinds of solvents and the like are used for wet cleaning and are manually applied by a person. Accordingly, the process chamber is depressurized, the chamber is opened to obtain proper access, and the interior surface of the chamber removes at least some of the portion of the solvent where the solvent is deposited by chemical, mechanical, or both. As it is, it is cleaned manually. Thus, it is desirable to have a plasma monitoring system that can accurately indicate when further performance of the plasma cleaning inside the processing chamber is actually ineffective, such as when the wet cleaning begins at a more appropriate time or is removed completely.

Wet cleaning and plasma cleaning of the interior surface of the treatment chamber are ineffective at the designated precipitate after a certain number of plasma treatments have been performed in the chamber. Significant degradation of the interior surface of the processing chamber causes some components of the chamber to be replaced. Components of the processing chamber, which are typically replaced on a periodic basis of some type, include showerhead, wafer platform, wafer pedestal, quartz bell jar and quartz bell roof. bell roof).

Typically, further processing of the chamber interior surface is performed after wet cleaning is performed, after one or more processing chamber components have been replaced, before restarting commercial use of the chamber (eg, wafer processing in a chamber of commercial intent), and In the case of a new chamber for that material. There is no product in the processing chamber because the plasma is inserted into the processing chamber which is now closed in this operation, which is also commonly called the plasma cleaning operation. In this case, the plasma cleaning operation directs solvent residue from the wet cleaning or “preps” new chamber components for plasma processing of the product in the chamber. It is desirable to have a plasma monitoring system capable of accurately indicating both the state and the end point of the plasma cleaning operation in this case.

Conditioning wafers may be processed after some form of processing chamber cleaning, after some components of the chamber have been replaced, or in the case of new chambers with no plasma treatment performed at all, before the production wafer is run through the processing chamber. It can be run through the chamber. Full plasma processing is typically performed on one or more conditioning wafers disposed in the processing chamber in a controlled wafer operation. The conditioning wafer may simply be "blanks", or some semiconductor device element may be made thereon, and the implementation of the entire plasma process does not work for the conditioning wafer or portion of the conditioning wafer to be etched. Nevertheless, no semiconductor device is made from the conditioning wafer, and no type of integrated circuit is etched onto the conditioning wafer during the plasma recipe. Instead, this type of conditioning wafer is refurbished (e.g., material is redeposited in the area etched during the conditioning wafer operation) and reused or discarded as a conditioning wafer. Processing of such conditioning wafers also “preps” or “seasons” the chamber and deliberately places the chamber to produce in a steady state. There is no device used to identify when the conditioning wafer has been accomplished with intentional intent. Therefore, it is desirable to have a plasma monitoring system that can accurately indicate the state of termination as well as the state of the controlled wafer operation.

FIELD OF THE INVENTION The present invention generally relates to the field of plasma processes, and more particularly to monitoring / evaluating such plasma processes.

1 is a structural diagram showing a wafer production system.

2 is a perspective view showing one embodiment of a wafer cassette included in the wafer production system of FIG.

3A and 3B are plan and side views illustrating one embodiment of a wafer steering assembly included in the wafer production system of FIG.

4 is a cross-sectional view of one embodiment of a plasma processing chamber, ie a dry etching chamber, that may be included in the wafer production system of FIG.

FIG. 5 is a structural diagram illustrating one embodiment of a gas application system for the processing chamber of FIG.

6 is a structural diagram illustrating one embodiment of a plasma monitoring assembly that may be included in the wafer production system of FIG.

FIG. 7 is a flow chart illustrating one embodiment of a plasma monitoring module used by the plasma monitoring assembly of FIG.

FIG. 8 is a spectral pattern diagram illustrating one embodiment of a plasma recipe that may be implemented in the system of FIG.

Figure 9 is a flow diagram illustrating one embodiment of a plasma spectral directory and its various subdirectories that may be used in the plasma monitoring operation.

FIG. 10 is a flow diagram illustrating one embodiment of a general data management structure that may be used for the various subdirectories of the plasma spectral directory of FIG.

FIG. 11 is a flow chart illustrating one embodiment of a method of compressing / integrating data within the general data management structure of FIG.

FIG. 12A illustrates one embodiment of a data management structure that may be used for the normal spectral subdirectory of FIG.

FIG. 12B illustrates one embodiment of a data management structure that may be used for the abnormal spectrum and unknown spectrum subdirectories of FIG.

FIG. 13 is a flow chart illustrating one embodiment of a pattern recognition module that may be used by the current plasma processing module of FIGS. 7 and 32 in the evaluation of plasma processing performed in the processing chamber of FIG.

FIG. 14 is a flow diagram illustrating one embodiment of a process alert module that may be used by the current plasma process module of FIGS. 7 and 32 in the evaluation of plasma processes performed in the process chamber of FIG.

FIG. 15 is a flow chart illustrating one embodiment of an initiation module that may be used by the current plasma processing module of FIGS. 7 and 32 in the evaluation of plasma processing performed in the processing chamber of FIG.

FIG. 16 is a flow diagram illustrating one embodiment of an initiation subroutine that can be accessed by the initiation module of FIG. 15. FIG.

17A-17C show examples of spectra of one form of plasma processing, namely a three-step plasma recipe, implemented in the processing chamber of FIG. 1 and currently monitored by a plasma processing module.

18A-18C are performed in the processing chamber of FIG. 1 and are first wetted in another form of plasma processing that may be monitored by a plasma processing module, that is, at the beginning, midpoint, and end of this plasma cleaning operation. The figure which shows the spectrum example of the plasma cleaning operation | movement which is not cleaned, respectively.

19A-19C are another form of plasma treatment that is implemented in the processing chamber of FIG. 1 and can now be monitored by a plasma processing module, that is, wet cleaning the chamber at the beginning, midpoint, and end of such plasma conditioning operations. Each showing an example of the spectrum of the plasma cleaning operation carried out afterwards.

20A to 20C show another form of plasma processing implemented in the processing chamber of FIG. 1, which can now be monitored by a plasma processing module, namely, controlled wafer operation at the beginning, midpoint, and end of such a controlled wafer operation. Figures each showing an example of the spectrum.

FIG. 21 is a flow diagram illustrating one embodiment of a plasma state subroutine that may be used by the plasma state module of FIGS. 7 and 32. FIG.

FIG. 22 is a flow chart illustrating another embodiment of a plasma state subroutine that may be used by the plasma state module of FIGS. 7 and 32. FIG.

FIG. 23 is a flow diagram illustrating one embodiment of a plasma state / process recognition subroutine that may be used by the plasma state module of FIGS. 7 and 32. FIG.

FIG. 24 is a flow diagram illustrating another embodiment of a plasma state / process recognition subroutine that may be used by the plasma state module of FIGS. 7 and 32. FIG.

FIG. 25 is a flow diagram illustrating one embodiment of a plasma state / process step recognition subroutine that may be used by the plasma state module of FIGS. 7 and 32. FIG.

26A-26C show examples of spectra from "clean" processing chambers, "aging" processing chambers, and "dirty" processing chambers, respectively.

FIG. 27 is a flow chart illustrating one embodiment of a chamber condition subroutine that may be included in the chamber condition module of FIGS. 7 and 32. FIG.

FIG. 28 is a flow chart illustrating another embodiment of a chamber condition subroutine that may be included in the chamber condition module of FIGS. 7 and 32. FIG.

FIG. 29 is a flow chart illustrating another embodiment of a chamber condition subroutine that may be included in the chamber condition module of FIGS. 7 and 32. FIG.

30A-30D show examples of spectra from a processing chamber at “dirty chamber” conditions, end of wet cleaning, end of plasma cleaning, and end of controlled wafer operation, respectively.

FIG. 31 is a structural diagram illustrating another embodiment of a plasma monitoring assembly that may be included in the wafer production system of FIG. 1, including the current plasma processing module of FIG. 7, and including a calibration module.

FIG. 32 is a flow chart illustrating one embodiment of a plasma monitoring module that may be used by the plasma monitoring assembly of FIG. 37 as well as the plasma monitoring assembly of FIG.

FIG. 33 is a structural diagram illustrating one embodiment of the spectrometer assembly of FIG. 31;

FIG. 34 illustrates one embodiment of a fiber optic cable assembly fluidly interfacing the window and plasma monitoring assembly in FIG.

35 is a structural diagram showing an axis of correction light transmitted and reflected by the inner and outer surfaces of the window of FIG.

FIG. 36 illustrates one embodiment of a fixture assembly for interconnecting the fiber optic cable assembly of FIG. 34 with a window on the processing chamber shown in FIG.

FIG. 37 is a structural diagram illustrating another embodiment of a plasma monitoring assembly that may be included in the wafer production system of FIG. 1, including the current plasma processing module of FIG. 7, and also including a calibration module.

FIG. 38 is a structural diagram showing an axis of correction light transmitted and reflected by the inner and outer surfaces of the window of FIG. 37; FIG.

FIG. 39 illustrates one embodiment of a fixture assembly for interconnecting a fiber optic cable and a window on a processing chamber in the configuration shown in FIG. 37. FIG.

40 is a flow chart showing one embodiment of a correction module in FIG.

FIG. 41 is a flow chart illustrating one embodiment of a calibration subroutine that may be used by the calibration module of FIG. 40. FIG.

FIG. 42 illustrates one embodiment of a spectrum of correction light that may be used by the correction module of FIG. 40; FIG.

Figure 43 illustrates one embodiment of the portion reflected by the inner surface of the process chamber window when there is no at least incidental deposit formed in the correction light of Figure 42;

FIG. 44 illustrates another embodiment of a spectrometer that may be used by the spectrometer assembly of FIG. 31 and fluidly interfaced with the calibration module of FIG.

45 is a flow chart showing another embodiment of a correction subroutine that may be used by the correction module of FIG.

FIG. 46A illustrates one embodiment of a spectrum of correction light that may be used in the correction module of FIG. 40 to identify an intensity change state. FIG.

FIG. 46B illustrates another embodiment of a spectrum of correction light that may be used in the correction module of FIG. 40 to identify an intensity change state. FIG.

FIG. 47A illustrates one embodiment of the spectrum of the portion reflected by the inner surface of the processing chamber window when in the degenerate or aging state in the correction light of FIG. 46A;

FIG. 47B illustrates one embodiment of the spectrum of the portion reflected by the inner surface of the processing chamber window when in the degenerate or aging state in the correction light of FIG. 46B;

FIG. 48 is a flow chart illustrating another embodiment of a correction subroutine that may be used by the correction module of FIG. 40. FIG.

FIG. 49 is a flow chart illustrating one embodiment of a search subroutine that may be used by the search module of FIGS. 7 and 32. FIG.

50A-50C show examples of intensity versus time graphs for three wavelengths generated by the search subroutine of FIG. 49, from one plasma recipe implemented on a product in one of the chambers of FIG.

51A-51C show examples of intensity versus time graphs for the same three wavelengths shown in FIGS. 50A-50C, from plasma recipes performed differently on the product in the same chamber.

FIG. 52 is a flow diagram illustrating one embodiment of an endpoint detection subroutine that may be used by the endpoint detection module of FIGS. 7 and 32. FIG.

FIG. 53 is a flow chart illustrating another embodiment of an endpoint detection subroutine that may be used by the endpoint detection module of FIGS. 7 and 32. FIG.

54A shows an example of the spectrum from the processing chamber at the beginning of the plasma processing step.

54B shows an example of a spectrum selected to indicate the end point of the plasma processing step in FIG. 54A for use as a reference by the end point detection subroutine in FIG. 53;

54C shows the difference between the spectra of FIGS. 54A and 54B according to the endpoint detection subroutine of FIG. 53;

Fig. 55A shows an example of the spectrum in the processing chamber at the midpoint of the plasma processing step shown in Fig. 54A.

FIG. 55B shows the same spectrum from FIG. 54B. FIG.

FIG. 55C shows the difference between the spectra of FIGS. 55A and 55B according to the endpoint detection subroutine of FIG. 53; FIG.

Figure 56A shows an example of the spectrum in the processing chamber at the end of the plasma processing step shown in Figure 54A.

FIG. 56B shows the same spectrum from FIG. 54B. FIG.

FIG. 56C shows a difference between the spectra of FIGS. 56A and 56B according to the endpoint detection subroutine of FIG. 53;

FIG. 57 is a flow chart illustrating another embodiment of an endpoint detection subroutine that may be used by the endpoint detection module of FIGS. 7 and 32. FIG.

FIG. 58 shows an example of an optical emission output to indicate an end point of a plasma processing step, in accordance with the end point detection subroutine of FIG. 57; FIG.

FIG. 59 is a flow chart illustrating one embodiment of a wafer distribution subroutine that may be included in the wafer distribution module of FIGS. 7 and 32. FIG.

FIG. 60 is a flow chart illustrating another embodiment of a wafer distribution subroutine that may be included in the wafer distribution module of FIGS. 7 and 19.

Figure 61 illustrates another embodiment of a fixture for interconnecting fiber optics and processing chambers.

FIG. 62 illustrates another embodiment of a search subroutine for identifying a wavelength range with an indicator for an endpoint. FIG.

63A-63H show graphs of change in area versus time for various wavelength ranges.

Figure 64 illustrates another embodiment of an endpoint detection subroutine.

Figure 65 illustrates an embodiment of a plasma monitoring network.

FIG. 66 illustrates various modules that can be accessed in the plasma monitoring network of FIG. 65; FIG.

Summary of the Invention

The present invention generally relates to various forms of plasma treatment. These forms can be classified into four main categories. The first category relates to the manner of calibrating or initializing a procedure, a related component or both. The first to fourth aspects described below fall within this category. Other categories relate to various forms of evaluation methods for plasma processing performed in the processing chamber, more typically, plasma processing currently being performed (eg, plasma status evaluation, plasma processing / plasma processing step identification, plasma "On" decision). The fifth to eighth forms described below are in the second category. Another category related to the present invention is at least some mode of endpoint for plasma processing (e.g., plasma cleaning, controlled wafer operation) or separated / identifiable portions (e.g., plasma steps of a multi-step plasma recipe). Is related. The ninth to thirteenth forms described below are in the third category. Finally, a fourth category related to the present invention relates to how to implement one or more of the forms shown above in a semiconductor manufacturing facility. The fourteenth to seventeenth aspects described below are in the fourth category.

A first aspect of the invention is implemented in a plasma processing system having a correction capability associated with a plasma processing operation. The plasma processing system includes a processing chamber having a window having an inner surface exposed to plasma processing performed in the chamber and an outer surface isolated from the processing. The plasma generator is coupled to a plasma processing system to provide plasma for plasma processing. Any technique and corresponding structure for forming plasma in the chamber is suitable for the first aspect of the invention. A first spectrometer assembly (eg, one or more spectrometers of any type, such as scanning type spectrometers and solid state spectrometers) is located outside of the chamber and the first fiber optic cable assembly fluidly interconnected to the window via an assembly (eg, one or more fiber optic cables). A calibration light source is also located outside of the chamber and is fluidly interconnected to the window via a first fiber optic cable assembly (eg, one or more fiber optic cables). The first and second fiber optical cables are disposed on the outer surface of the window, but at appropriate intervals, to achieve an effective interconnect that necessarily receives data transmitted through the window.

In one embodiment of the first aspect of the invention, "calibration" is a correction light transmitted to a window by a correction light source (e.g., pattern, intensity, or both of corresponding optical emissions). a comparison between data relating to calibration light and data relating to a first portion of this same corrected light reflected by the inner surface of the window on the processing chamber (pattern, intensity, or both of the first portion). The inner surface of the treatment chamber window is the portion of the window that is typically affected by the plasma treatment performed in the chamber. Changes in the inner surface of the window will affect the evaluation of the plasma treatment performed in the chamber, if the evaluation is based on the transmission of optical emission through the window. Since the change to the inner surface of the window affects the reflection of the correction light by the inner surface, this change can be identified through the use of significant correction light. Accordingly, the "calibration" available from this embodiment of the first aspect of the invention creates an "optical emission-based" plasma monitoring by making at least one regulator with respect to such a system based on the above-described comparison. Can be used to calibrate the system. The form of the "regulating device" contemplated by this embodiment of the first form is designated for the third form of the present invention below.

The information on the window relating to the correction according to the first aspect of the invention preferably comprises information defined for the inner surface of the window on the processing chamber through which optical emission has been obtained. In other words, the correction according to the first aspect is preferably associated with the inner surface of the window and not with the outer surface of the window. The portion of the correction light reflected by the inner surface of the window can easily be used for comparison with the correction light in the same form as transmitted to the window in another embodiment of the first form, which is achieved by configuring the window appropriately Can be. For example, at least a portion of the window that includes the region of correction light that affects the window may be generally Wedge-shaped. Another feature of the window arrangement in this embodiment is that the inner and outer surfaces of at least a portion of the window can be arranged in a non-parallel relation. This type of configuration is particularly useful when the corresponding ends of the first and second fiber optic cable assemblies are arranged coaxially or at least in a non-parallel relationship. Accordingly, the first and second fiber optical cables, such that the reference axis extended from this fiber optical assembly respectively touches the window outer surface at an angle other than at right angles, but at least practically at right angles to the inner surface of the window. The end of the assembly can be placed. As such, the portion of the correction light reflected by the outer surface of the window is directed away from the end of the first fiber optical assembly, thus not being "collected". However, at least a portion of the correction light portion reflected by the inner surface of the window is available for the first spectrometer assembly and thus towards the end of the first fiber optical cable assembly, as can be used for the above-described comparison. It will face in the opposite direction.

Another way of collecting portions of the correction light reflected by the inner surface of the window instead of being reflected by the outer surface of the window may be performed with a conventional window or at least substantially parallel to the inside and outside of the window (eg For example, it may be performed in a window configuration of a constant thickness). In this case, the first and second fiber optic cable assemblies are at least substantially identical but "pointing" in the direction to the same area at substantially the same area at an angle other than "opposite" (eg, at right angles, but generally Placed and oriented horizontally to the same area on the window (from the opposite direction) To illustrate this characterization, consider a reference plane that extends generally in the vertical direction through the interior and exterior of the window. The second fiber optic cable assembly is disposed on the first side of the reference plane, displayed therefrom, and directed towards the window at least generally in the direction of the reference plane, such as to emit light to contact the outer surface of the window at an angle of. At least a portion of the correction light reflected by the inner surface is supplied to the first spectrometer assembly As is “collected” by the first fiber optic cable assembly, an endpoint of the first fiber optic cable assembly is disposed on, and displayed from, the second side of the same reference plane (opposite of the first side), and a window And generally at least in the direction of the reference plane, wherein the thickness of the window is at least some amount by which the portion of the correction light reflected by the inner surface of the window is offset from the portion of the correction light reflected by the window outer surface. By definition, the "sensitivity" to the positioning relative between the end points of the first and second fiber optic cable assemblies thus only collects the light reflected by the inner surface relative to the outer surface of the window.

To reduce the influence of the portion of the correction light reflected by the outer surface of the window, an anti-reflective coating is used on the outer surface of the window-that is, on the inner surface of the window and the correction light transmitted to the window. To perform a comparison between the portions of the correction light reflected by the light. The reference axis projected from each end point is at least substantially perpendicular to the inner and outer surface, such that the windows parallel to the inner and outer surfaces are coaxially positioned and oriented with the end points of the first and second fiber optical cables. Can be used in the same arrangement.

Using an antireflective coating outside the window can reduce the amount of light reflected from the outer surface of the window in this example and directed back to the first fiber optic cable assembly for supply to the first spectrometer assembly. However, there is still some reflection from the outer surface to be supplied to the first spectrometer assembly depending on the reflection required from the inner surface. Accordingly, such antireflective coatings can be combined with the techniques described above that provide some separation in the correction light reflected from the inside and outside of the window.

Another embodiment of the first aspect of the invention relates to a fiber optic cable fixture assembly. One example of this fixture assembly application is to maintain one or more of the associated end points of the first and second fiber optic cable assemblies in a fixed positional relationship relative to the window. Another application of this fixture assembly is to enable the separation of one or more of the first fiber optic cable assembly, the second fiber optic cable assembly and the window into the processing chamber (eg, with one or more threaded fasteners). In one embodiment of such a fixture assembly, at least the endpoints of the first and second fiber optic cable assemblies are coaxial and the portion of the window is reflected from the portion of the correction light reflected by the outer surface of the window. It is particularly useful in windows configured to separate portions of the fixed light reflected by the inner surface (eg, using windows that are generally shaped like V.) In this case, the fixture assembly interfaces with / to at least a portion of the window outer surface or And a recessed area for projecting. At least a portion of one fixture assembly surface includes a light absorbing material that illuminates a portion of the correction light reflected by the outer surface of the window (ie, to absorb light reflected by the outside of the surface when it strikes the body of the fixture assembly). As the reference axes projected from the first and second fiber optical cable assemblies each cross the outer surface of the window at an angle that is not perpendicular, and also at least substantially perpendicular to the inner surface of the window, the first port is fixed assembly. Extends through and intersects in the direction of the recessed region Thus, this embodiment of the fixture assembly provides a correction light portion in which the first fiber optic cable assembly is reflected by the inner surface of the window, not from the outer surface of the window. Windows and first and second fiber optical cables with fixed relative positional relationships allowing only bays to be collected It may be used to hold the assembly.

Another embodiment of the first aspect of the invention relates to the use of at least two different types of light by means of a correction light source. One of these correction lights includes a number of discrete intensity peaks, while the other light is defined by a series of intensities or where there are no discrete peaks (e.g., constant intensity, constantly changing intensity, or a combination of both). do. In addition, one of these correction lights is used to identify one type of state required for correction (eg, wavelength shift associated with optical emission data obtained through the window), while the other is required for correction other than (e.g., , Intensity shift coupled to optical emission data obtained through the window, complete filtering of a portion of the optical emission transmitted through the window. How this type of light source is used to identify this type of state is indicated in the second form below. Accordingly, one or more features discussed in the second form below may be used in combination with various features as indicated in this embodiment of the first form of the invention.

A second aspect of the present invention relates to one or more "conditions" identified during calibration of some forms of plasma processing systems. Several embodiments of this second form are directed to a processing chamber, a plasma monitoring assembly that monitors / evaluates plasma-based processing performed within the chamber via optical emission data of the plasma in the chamber during processing, and the plasma monitoring assembly. Each is implemented in a calibration assembly that is fluidly interfaced.

One embodiment of a calibration assembly in accordance with a second aspect of the invention corrects a plasma monitoring assembly for one or more conditions. One such state is the wavelength shift experienced for the optical emission data obtained in the plasma treatment. Another state is the intensity shift experienced for the optical emission data obtained on that plasma treatment. Another state is when any optical emission available on that plasma process is at least nearly completely filtered by the window. Finally, one of these states is when the window has a different effect on another part of the optical emission. This is the case where there is a difference in intensity or multiple dampening effect on the entire optical emission data obtained on the plasma treatment. Any combination of the above conditions is identified and corrected by the calibration assembly of the second form of the invention.

The calibration assembly discussed above with respect to the first aspect of the invention identifies and corrects the corresponding plasma monitoring assembly for the state of the form shown above with respect to the second aspect of the invention. The wavelength change can be identified by using correction light with multiple discrete and substituted (at different wavelengths) intensity peaks. The change in wavelength of the peak appearing in the corrected light portion (corrected light) transmitted to the window relative to the corrected light portion (reflected light) reflected by the inner surface of the window is specified, and more preferably at least nearly alleviated by correction. It can be expressed as a change in wavelength. In addition, the intensity change is identified as this type of light by indicating how the intensity peak changes between the corrected light and the reflected light. Some peaks in the reflected light can be reduced for other correction lights that signal the presence of multiple relief effects. Peaks that appear in the correction light but not in the reflected light indicate that they have been filtered at wavelengths where no peak exists. Preferably, intensity variations, full filtering and other mitigating effects are identified by using a form of correction light with continuous intensity that provides a more complete picture than in the case of correction light with discrete intensity peaks used with this intention. That is, little or no information is provided in the " behavior " of the window for the wavelength located between the intensity peaks in the correction light, thereby making an assumption. This premise is unnecessary when using correction light having continuous intensity for the above intention.

A third aspect of the invention relates to plasma processing monitoring through the initialization of the plasma monitoring assembly. The plasma monitoring assembly evaluates at least one type of plasma treatment (eg, what is currently performed in the processing chamber) by obtaining optical emission data through the window on the processing chamber. The optical emission obtained on the plasma treatment comprises at least about 250 nm to about 1,000 nm defining a first wavelength range, and a wavelength every 1 nm throughout the first wavelength range.

In the first embodiment of the third form, the initialization of the plasma monitoring assembly is indicative of correction light directed toward the window, optical reflection of the first part of the correction light from the window, and transmission of the original correction light and the first part through optical emission acquisition. Include a comparison. The combination of the various features discussed above with respect to the correction according to the first and second forms can then be spherical in the third form as well. When the comparison of the first portion of the corrected light and the reflected light yields a first result (e.g., intensity change, wavelength change, filtering, or a combination thereof), at least one adjustment is made to the plasma monitoring assembly. .

A control device that can be made for the plasma monitoring assembly in the first embodiment of the third form includes physical control for the plasma monitoring assembly. For example, when a spectrometer assembly is used to obtain optical emission data or when it includes at least one scanning type spectrometer, the grating, one or more mirrors, or both, may be a plasma surveillance assembly. It is moved (pivoted) to correct it. In this way any calibration of the plasma monitoring assembly, including the physical adjustment of the spectrometer assembly, typically specifies the wavelength due to the "drifting" of the spectrometer assembly, and this type of physical adjustment is from another source. Can be used to specify the wavelength change. Another form of adjustment that can be made to the plasma monitoring assembly is the correction of the optical emission collected or acquired on the plasma treatment, or more generally the data representing such optical emission. Accordingly, the "adjustment" may include the implementation of a single calibration factor or multiple calibration factors in the plasma monitoring assembly. A single correction factor is typically used when the "uniform" intensity change intersected by the optical emission is evaluated (e.g., ± "x" intensity units that can be considered "identical"), while multiple correction factors are used. Is typically used when another degree of relief intersecting the optical emission is evaluated. The correction factor can be implemented to have the required effect on the output of the spectrometer assembly. Another path for correction in this method is to normalize the optical emission that is evaluated based on the comparison of the correction light with the first portion of the correction light reflected by the window.

Initialization of the plasma monitoring assembly in the second embodiment of the third form includes monitoring the window on the processing chamber through acquiring optical emission. The second embodiment further includes determining whether the window is to filter optical emission contained within a first wavelength range of about 250 nm to 1,000 nm, wherein the acquisition is made for evaluation by a plasma monitoring assembly. And the optical emission to be used. Likewise, the various features discussed above with respect to the second aspect of the invention with regard to "filtering" may also be included in the second embodiment of the third aspect. Finally, a second embodiment of the third form includes the step of defending a plasma surveillance assembly that ignores all optical emission within the first wavelength range or any region where filtering is detected. A notification is provided that the filtering state has been identified. In addition, in this situation, a recommendation is made to replace the window.

The monitoring in the second embodiment of the third aspect includes transmitting correction light toward the window, reflecting the first portion of the correction light from the window, and comparing the correction light with the first portion. . In addition, one or more features discussed above with respect to the first and second aspects of the present invention may also be used by the second embodiment of the third aspect. The second embodiment also includes making at least one adjustment associated with the plasma monitoring assembly when any condition is identified by the calibration procedure described above. Here, one or more features discussed above with respect to the first embodiment of the third form may also be used by the second embodiment of the third form.

Initializing the plasma monitoring assembly in the third embodiment of the third aspect of the present invention described above includes monitoring the window on the processing chamber as the optical emission is obtained on the plasma processing. The third embodiment also has a first effect (e.g., dampening) in a first wavelength range where the window is included in a first wavelength range of 250 nm (nanometer) to 1000 nm, and within the first wavelength range. Determining whether the second influence on the second wavelength range included outside the first wavelength range associated with the first impact. The various features discussed above with respect to the second aspect of the invention for identifying other mitigating effects may also be included in the third embodiment of the third form. Finally, a third embodiment of the third form includes making at least one adjustment with respect to the plasma monitoring assembly when the effects of the first and second types are identified. Here, one or more features discussed above with respect to the first embodiment of the third form may also be used by the third embodiment of the third form.

The monitoring step in the third embodiment of the third aspect includes transmitting correction light to the window side, reflecting a first portion of the correction light from the window, and comparing the correction light with the first portion. . One or more features discussed above with respect to the first and second aspects of the invention may also be used by the third embodiment of the third aspect. The third embodiment also includes making at least one adjustment with respect to the plasma monitoring assembly when any condition is identified by the calibration procedure described above. Likewise, one or more features discussed above with respect to the first embodiment of the third form may also be used by the third embodiment of the third form of the present invention.

A fourth aspect of the invention relates to a plasma processing monitoring method comprising window monitoring on a processing chamber in which plasma processing is performed. In this regard, a large amount of product is loaded into the processing chamber (e.g., at least one wafer), and then plasma processing is performed on the product (e.g., plasma recipe), and data on the plasma processing (e.g., processing Optical emission of plasma in the chamber) is obtained through the window on the processing chamber. The plasma process is evaluated based on data obtained through the processing chamber window and data obtained through monitoring of the window.

In a first embodiment of the fourth aspect described above, in more detail, the monitoring of the window includes monitoring the actual state of the window. In the case of this second embodiment the state of the window is monitored differently than through the data obtained in the plasma processing. That is, the data obtained in the plasma processing performed in the processing chamber is not used in any way by the step of monitoring the state of the window in the first embodiment of the fourth aspect of the present invention.

Various features can be used by the first embodiment of the fourth aspect of the present invention described above, and these features can be used alone or in any combination in the first embodiment described above. Monitoring of the window state while plasma processing is performed in the chamber can be inhibited with additional features of the first embodiment. That is, the monitoring of the window state and the implementation of the plasma processing are performed at different and non-overlapping times. Typically, monitoring of the window state is performed in the chamber prior to the execution of plasma processing to determine the effect that the inner surface of the window will have on plasma processing data obtained through the window. Here, "identifiable states" (e.g., wavelength change, intensity change, filtering, "equal" mitigation effect (intensity), multiple mitigation effects (intensity)) and methods of identifying such states (e.g., sending correction light towards the window) Comparing one of the correction light with the portion of the correction light reflected by the inner surface of the window), one or more of the features discussed above in relation to the second embodiment of the invention Can also be implemented. At least one adjustment is made to the plasma monitoring assembly when one or more such "states" are identified. Various forms of "regulation", and one or more of these features, as indicated for the third aspect of the invention, may also be included in the first embodiment of the fourth form.

The second embodiment of the fourth aspect relates to window monitoring in a manner different from that described above for the first embodiment. In contrast, the monitoring step of the second embodiment includes the steps of: transmitting correction light toward the window, reflecting the first portion of the correction light from the inner surface of the window, and by the correction light transmitted to the window and the window inner surface. Comparing the portions of the reflected corrected light. Here, one or more features shown above with respect to the first and second forms of the present invention may also be included in the second embodiment of the fourth form. The form of states identifiable through monitoring of the processing chamber window is shown above for the second aspect of the present invention, and one or more of these features may also be included in the second embodiment of the fourth form.

A fifth aspect of the invention relates to determining the time that plasma is present or “on” in a processing chamber based on machine-based optical analysis. More specifically, the fifth form obtains an optical emission from within the processing chamber, evaluates this optical emission, generates a plasma within the processing chamber, and evaluates the optical emission from within the processing chamber on a machine-based basis. It is about identifying the time that plasma is present in the processing chamber.

Various features can be used by the fifth aspect of the invention described above, and these features can be used alone or in any combination. For example, identifying the time that plasma is present in the chamber through optical analysis can be implemented in several techniques. The time the plasma enters the chamber is identified by determining when the optical emission from within the processing chamber exceeds a predetermined output (e.g., when the intensity of the optical emission in a chamber or the intensity of a portion exceeds a predetermined amount). Can be. The identification of plasma time of existence via optical analysis can also be used to assess how optical emission changes over time. For example, when no plasma is present in the chamber, there will be no corresponding optical emission emitted into the chamber. Accordingly, the identification step can simply be used to indicate any change from the "dark" state to the "light" state. Another method of determining when plasma is present in the chamber via optical analysis is to determine when the optical emission from the chamber includes the minimum number of discrete intensity peaks each having at least a predetermined intensity. Finally, the presence of the plasma in the chamber matches the current optical emission from within the chamber with at least one output already obtained from the chamber and recorded on the computer-readable medium at the time that the plasma is present in the chamber. Can be identified by determining when it is.

Another feature that may be included in the fifth aspect is the treatment of the product after the presence of plasma in the chamber. In one embodiment, the window on the chamber can be monitored according to the fourth aspect of the invention described above. This monitoring operation is automatically terminated at the time when the plasma is first identified in the chamber via the optical analysis provided by the fifth form. In another embodiment, the plasma processing performed in the chamber may be monitored by a plasma monitoring assembly. Calibration of the plasma monitoring assembly is available according to the third aspect of the invention described above. This correction operation can be automatically terminated when the plasma is identified in the chamber via the optical analysis provided by the fifth form.

A sixth aspect of the present invention is directed to a plasma spectral directory that contains minimal optical emission data from plasma processing already performed in a processing chamber and is used to evaluate plasma processing that is subsequently performed in a very identical processing chamber. . The plasma spectral directory is stored in a computer-readable storage medium and includes a first data structure having a plurality of data entries for convenience of description. Each of these data entries includes data indicative of optical emission from at least one time point during the plasma process, which data relates to one of a first category, a second category and a third category.

The data entry related to the first category is a plasma process that is performed in a chamber and defines a "standard" before the next plasma process is determined. Plasma processing performed in the processing chamber is evaluated by determining whether it "corresponds" or "matches" at least one data associated with the first category. The type of plasma treatment associated with the first category may be characterized as a "normal" implementation. In this case, the plasma processing associated with the first category is considered to have proceeded at least without substantial error, and may be tested in some way to confirm that the process has proceeded without actual error or abnormality.

Optical emission of the plasma in the processing chamber is typically reflected regardless of whether a given plasma treatment proceeds in a "normal" form. In this regard, the optical emission associated with the data entry of the first category comprises at least every 1 nm for this range and at least every 1 second from the plasma treatment at wavelengths between at least 250 nm and 1000 nm. The evaluation of the plasma processing subsequently performed in the processing chamber may be used on demand / requirement even if not all of this data is used. In addition, data for the entire plasma process, or at least a portion of the process after the plasma has stabilized, is typically included in a data entry associated with the first category.

In fact, any form of plasma processing is included in the data entry associated with the first category as long as it provides optical emission data indicating that the plasma processing has proceeded in a predetermined format. One or more plasma recipes (performed on production wafers, verification wafers, or both), plasma rinsing (before or after wet rinsing), and conditioning wafer operations are each contained within the plasma spectral directory and are associated with the first category. . Plasma treatment forms of various “species” are also included within the plasma spectral directory (eg, other forms of plasma recipe) associated with the first category. Multiple data entries of the same “species” are also included in the plasma spectral directory associated with the first category (eg, multiple entries of the same plasma recipe are carried out on the same type of product).

The data entry associated with the second category of the sixth form is performed in a processing chamber and is a plasma process (eg, plasma recipe, plasma cleaning, controlled wafer operation) in which at least one error or abnormality has occurred. The error or anomaly is typically manifested by a change in the optical emission of the plasma in the processing chamber, the cause of which is identified by confirmation of this optical emission. Typically, this confirmation is after the end of the plasma treatment. Acquisition of optical emission data within the wavelength range indicated above increases the likelihood that optical emission data indicative of error or anomaly is actually available for inclusion in a data entry associated with a second category.

The identification or cause of the error or abnormality is in some way included in the data entry associated with the second category. Various actions are initialized based on this information. An alarm or the like (audio, video, or both) may be issued to inform a person of an error in plasma processing in the processing chamber. The details of the error are also useful, but one or more methods can be made for indicating or correcting the error or anomaly. Finally, the corrective action can be performed automatically on demand.

Typically, the entire implementation if an error occurs is not included in the data entry associated with the second category. Instead, only optical emission that reflects the presence of the error or anomaly is typically included in this data entry. This includes optical emission data from only one time point or multiple time points during the plasma process. The optical emission included in any data entry associated with the second category is also in the wavelength range indicated above. However, if an error or anomalies reflect only a portion of the optical emission obtained in that plasma process, only this portion needs to be included in the plasma spectral directory for the data entry associated with the second category.

The data entry associated with the third category with respect to the sixth aspect has been performed in the processing chamber and is "unknown" plasma processing in the plasma spectral subdirectory. That is, the optical emission from that plasma process does not correspond to any data entry associated with the first or second category. Also, the reason for this is the case that has not yet been determined or, more precisely, the cause is not associated with a data entry on the computer-readable storage medium. Typically, two situations may include where the data entry is stored in the plasma spectrum directory and each case associated with the third category. One such situation is that the plasma processing associated with the first category has not yet been stored in the plasma spectral directory. In this case, the entire plasma process is stored in the plasma spectral directory and associated with the third category. If this data entry is identified as being a new plasma process that proceeded or considered substantially without any error or abnormality, this data entry is "transfer" from the third category to the first category. Plasma processing that has not been stored in the plasma spectral directory and has an error not associated with the second category are also stored in the data entry under the third category. Typically, in such a situation, only data from the initial occurrence of an error or abnormality to the end of the plasma processing is stored in the first data entry associated with the third category. The next evaluation of the optical emission data from this plasma treatment may indicate that a "new" error has occurred. If the cause of the error has been identified, all or some of the data from the corresponding data entry associated with the third category may be "delivered" to the second category.

A seventh aspect of the present invention relates to various analytical techniques that can be used to evaluate plasma processing in at least some manner. In a first embodiment of this seventh form, the computer-readable storage medium includes a plurality of data entries. Such at least one data entry is associated with the first category type described above with respect to the sixth form, while this at least one data entry is also associated with the second category described with respect to the sixth form.

The evaluation technique implemented by the first embodiment of the seventh form first determines which data entry corresponds to that plasma process. Any such correspondence can be used to characterize the plasma process as "normal" or the like. If the plasma process does not correspond to at least one data under the first category at any time, then the first embodiment of the seventh form provides a second method for checking whether an error or an abnormality in which the plasma process is known has occurred. The data entry under the category is "searched". Accordingly, data entries under the second category are not retrieved in each case.

Various features may be used by the first embodiment of the seventh form of the invention indicated above, which may be used alone or in any combination in the first embodiment indicated above. Initially, each of the various features / concepts described above with respect to the sixth form may be equally applicable and included in the first embodiment of the seventh form. In addition, there are several ways to determine whether the optical emission data of the corresponding plasma process matches or corresponds to a given data entry. The match or correspondence relationship is based on determining whether the current optical emission pattern "matches" with the associated optical emission pattern from the data entry. In addition, what is "relevant" optical emission depends on a lot of characterization. For example, the time related to the current optical emission can be used as a criterion to determine if this emission corresponds to a given data entry. That is, the time at which the corresponding optical emission is obtained is determined by which optical emission from a given data entry is to be used for the comparison (i.e., selecting the optical emission from the data entry obtained at the same time as the corresponding optical emission). It is used to identify the problem. Alternatively, the plasma processing can be evaluated simply by determining whether it proceeds in the same format as at least one data entry associated with the first category, but this need not be the same speed. In this case time is not a limiting criterion.

If the current plasma processing corresponds to a data entry associated with the second category, various operations may be started manually or automatically. For example, the corresponding plasma processing is terminated, an alarm is issued to indicate that an error has occurred, the reuse of the processing chamber for the processed product is postponed, adjustment of the plasma processing is performed to correct the error, or any Combination can be performed.

The second embodiment of the seventh form uses a computer-readable storage medium comprising a first data entry associated with the first category form defined above with respect to the sixth form. This data entry includes a plurality of first data segments from a number of different times during one plasma process previously performed in the processing chamber. Each data segment includes an optical emission of the plasma in the chamber for a wavelength of about 250 nm to about 1000 nm, defined by the first wavelength range, and at least every 1 nm for at least the entire first wavelength range. The second embodiment also involves the present optical emission obtained from another plasma processor implemented in the same processing chamber every 1 nm for the entire first wavelength range in the first wavelength range. A comparison is made between the current optical emission and the optical emission associated with at least one first data segment of the first data entry every 1 nm for the first wavelength range and for the entirety of the first wavelength range. Features discussed with respect to this second embodiment may be included as discussed above with respect to the first embodiment of the seventh form.

The third embodiment of the seventh form also uses a computer-readable storage medium. The first plasma treatment is performed in the processing chamber. Optical emission of the plasma in this chamber is obtained every 1 nm for a wavelength of at least 250 nm to 1000 nm defined by the first wavelength range and for the entire first wavelength range. This data is obtained at various times during the first plasma process, which is stored on a computer-readable storage medium. The second plasma process is performed after the end of the first and similar data is obtained. In some cases, it may be desired to compare the optical emission from the second plasma treatment and the optical emission from the first plasma treatment every 1 nm for the entire first wavelength range and for the entire first wavelength range. In some cases, however, this may not be useful, required or necessary. In this regard, the progress of the second plasma process for the first plasma process stored in the first data entry on the computer-readable storage medium may be based on an evaluation every 1 nm for at least 50 nm bandwidth and all of the smaller bandwidths. have.

The smaller wavelength range can be selected to evaluate the second plasma treatment for the first plasma treatment in various ways. In order to select the first wavelength range portion to be used in the evaluation, a specific wavelength which has previously been error-prone during the same plasma treatment may be used (eg, ± 25 nm of each wavelength in which an error or anomaly appears).

In addition, the wavelength range can be selected which includes each error previously generated in the same type of plasma processing. The "width" of an area can be defined by two extreme wavelengths, but including a kind of "buffer" on each end thereof (e.g., extending the range by 25 nm at each end). It may be desirable. Finally, specific wavelengths representing the end points or discrete / identifiable portions of the plasma treatment can be used to select the first wavelength range portion to be used in the assessment (± 25 nm of each wavelength). Individual endpoint indication wavelengths are described in more detail below with respect to the ninth aspect of the present invention.

An eighth aspect of the present invention relates to identifying the type of plasma treatment performed in a processing chamber. This form can be used to identify whether the plasma treatment is a type of plasma recipe performed on a type of controlled wafer or a plasma cleaning performed in a chamber. The first embodiment of the eighth form may identify a particular type of plasma recipe carried out on a product (eg, production wafer, verification wafer) in a processing chamber based on at least two plasma recipes in a computer-readable storage medium. Can be. In this regard, the computer-readable storage medium includes a plurality of data entries. This first data entry includes relevant data at multiple times during the first plasma recipe carried out on the product in the processing chamber (preferably at least the entirety of the first plasma recipe after stabilization of the plasma). This second data entry is at multiple times during the second plasma recipe (unlike the first plasma recipe) carried out on the product in the same processing chamber (preferably at least the entire second plasma recipe after the plasma has stabilized). Contains related data. Data is obtained from the corresponding plasma recipe carried out on the product in the same processing chamber. This data is used to determine if the current plasma recipe is of the same type as the first or second plasma recipe stored in the computer-readable storage medium. This determination is preferably completed before the end of the current plasma recipe and at least before the next product is loaded into the chamber. The first embodiment of the eighth form not only identifies the type of product (e.g., whether it is a production wafer or a verification wafer), but also the identification of that plasma process performed by including relevant data from previous plasma processing on a computer-readable storage medium. Can be used to judge. That is, by including a plasma recipe "A" performed on a given type of production wafer in one data entry and the same plasma recipe "A" on a given type of verification wafer in another data entry, the current plasma recipe produces a production wafer. There is the ability to determine if the process is being performed on a verification wafer.

Various features may be used by the first embodiment of the eighth form indicated above, and these features may be used alone or in any combination in the first embodiment indicated above. Initially, the data obtained in the current plasma process is the optical emission of the plasma in the process chamber. This optical emission includes a wavelength of at least about 250 nm to 1000 nm defined by the first wavelength range, and the optical emission is obtained every 1 nm for the entire first wavelength range. The optical emission of the plasma treatment is compared to see if there is sufficient correspondence between one or both of the first and second plasma recipes stored on the computer-readable storage medium. The technique described above with respect to the seventh form can also be implemented in the first embodiment of the eighth form.

The second embodiment of the eighth form inputs a plasma recipe to be executed in the chamber, and proves that no error occurs when the corresponding plasma recipe is input using the principle described above with respect to the first embodiment of the eighth form. do. That is, the identification of the plasma process is judged according to the first embodiment of the eighth form. Accordingly, each of the various features described above with respect to the first embodiment of the eighth form may also be included in the second embodiment of the eighth form. Then, through the optical analysis described above, the identification of the plasma process is conveyed to a suitable person (eg on a display) in some way. If an incorrect plasma process is entered on any wafer or "many" wafers, the plasma process will be identified and communicated to the appropriate person to inform the situation.

A third embodiment of that eighth form is stored on a computer-readable storage medium and instructed to identify the corresponding plasma recipe based on at least two plasma recipes previously carried out in the same processing chamber. The first execution of the corresponding plasma recipe is initialized and is of a type associated with the first or second plasma recipe. At least one characteristic of this plasma is monitored during the execution of each corresponding plasma recipe. Both the first and second plasma recipes are used for comparison to the first run of that plasma recipe. However, after the first execution of the plasma recipe is identified as being the first or second plasma recipe from the computer-readable storage medium, the next execution of the plasma recipe is identified at least initially on the computer-readable storage medium. Only evaluated for plasma recipes. This embodiment is particularly suitable when the first plasma of the cassette or the boat of the wafer is evaluated as described above, since the same plasma recipe is usually carried out in the entire cassette. Thus, in the third embodiment of the eighth form, once the identification of the plasma recipe executed on the first wafer is determined, all connected wafers in the cassette are evaluated at least initially for one plasma recipe on the computer-readable storage medium. . Thus, high evaluation speed can be realized. If any of the following executions of the corresponding plasma recipe deviate from the plasma recipe identified in the computer-readable storage medium, one variation of the third embodiment replaces the other plasma recipe in the computer-readable storage medium with the current plasma recipe. Should be used for evaluation. Another possibility is to check for any data entry of the same plasma recipe that is performed on the production wafer for the verification wafer, if the current plasma recipe does not correspond to the plasma recipe stored on the computer-readable storage medium. 1 wafer is a production wafer and its plasma recipe is considered identified). In this case, the logic first evaluates the plasma recipe for the production wafer stored in the computer-readable storage medium in the entire cassette and then, if necessary, for the same plasma recipe for the verification wafer stored in the computer-readable storage medium. Evaluate.

In a ninth aspect of the present invention, a plasma treatment (e.g., plasma recipe, plasma cleaning, controlled wafer operation) or a portion thereof (e.g., a plasma step of plasma recipe) results in a first setting result (e.g., a layer from the layer structure) is associated with a search for identifying one or more indicators of the first endpoint. Optical emission of the plasma is obtained at multiple times during the first plasma treatment. Such optical emission includes a wavelength of at least about 250 nm to 1000 nm defined by the first wavelength range. Optical emission is preferably obtained every 1 nm over the entire first wavelength range. This optical emission is evaluated or analyzed and at least one endpoint indicator is selected based on this analysis.

Various features may be used by the ninth aspect of the present invention, which features may be used alone or in any combination in the ninth aspect. For example, the analysis may include generating an intensity versus time plot for a number of individual wavelengths in the first wavelength range. Plots are generated for each wavelength that can be used based on the data collection results of the associated "collecting" structure (eg spectrometer). This plot is preferably analyzed in terms of information after the conclusion of the implementation of the plasma treatment, in terms of when the first endpoint occurs (eg, calculated based on process state knowledge and thickness of the etched layer). Wavelengths with plots with a pronounced change in intensity near the time when the first endpoint occurs can be identified as possible endpoint indicator candidates.

Another feature of the ninth aspect relates to the plots indicated above. Initially, the use of the methodology described above does not require the chemical knowledge involved in the plasma treatment. Instead, the data is performed in a data collection result that includes at least one first endpoint indicator (eg, at least one specific wavelength that undergoes a change in response to the occurrence of the first endpoint) in a large wavelength range. Plot patterns of individual wavelengths selected as possible candidates for the endpoint indicators of the first endpoint can be used alternately as endpoint indicators. In addition, the plot may be defined by a formula or function (eg, linear function, first ordinal polynomial, second order polynomial) up to the time at which the first endpoint occurs. When the current plasma recipe no longer "fits" this function, an endpoint is specified. The first and second derivatives of this function are provided to allow for faster determination of the end point, which is also contemplated by the ninth form.

Several performances of the same plasma process represent a first endpoint and need to increase the confidence level associated with the selected endpoint indicator. When the plots indicated above are used, the comparison of the plots between two or more runs may identify patterns that remain the same but undergo some form of change. This change can be a temporary shift, a shift in intensity associated with the pattern, a constant magnification of the pattern, a constant reduction of the pattern, or any combination thereof. The pattern that undergoes this form of change is an indicator whose wavelength actually points to the first endpoint. One "controlled" method involving this shift is to produce two or more products with different thicknesses. In this case, if a particular wavelength actually refers to the first endpoint, there will be a temporary shift. That is, the plot has a change that is shifted with the change in thickness.

The analysis used to select the at least one indicator of the first endpoint also includes an examination of the optical emission to identify the presence of the intensity peak, and at least practically disappearing near the time when the intensity peak occurred. It may include a judgment as to whether it is lost. Any wavelength associated with this type of intensity peak may be a first endpoint indicator. Similarly, the analysis used to select at least one indicator of the first endpoint may include an examination of the optical emission to determine which intensity peak appears near the time at which the first endpoint occurred. The wavelength associated with this type of intensity peak may also be an indicator of the first endpoint. The analysis used to select at least one indicator of the first endpoint may also include an examination of the optical emission to determine which intensity peak has reached a stable state near the time at which the first endpoint occurred. The wavelength associated with this type of intensity peak may also be a first endpoint indicator. Finally, the analysis used to select the at least one indicator at the first endpoint may include a test of overradiation to determine which intensity peaks that are stable experience changes near the time at which the first endpoint occurred. The wavelength associated with this kind of intensity peak may also be a first endpoint indicator. Any combination of the above can be used to select the endpoint indicator.

A tenth aspect of the present invention relates to the monitoring of at least two forms of plasma treatment, one being the "health" of the plasma and the other being at least one endpoint associated with the plasma treatment. This tenth form can be used for any plasma processing including plasma recipes performed on products (eg, production wafers, verification wafers) in the processing chamber, plasma cleaning (eg, with or without wet cleaning), and controlled wafer operation. Can be applied.

By another indication method, the entire plasma treatment may be evaluated for the “state” of the plasma treatment, except for the initial portion of the plasma treatment, in which the plasma is typically unstable. On the other hand, the evaluation of plasma processing for endpoint identification does not need to be initiated until it is close to the time the endpoint is reached. In addition, the frequency at which the plasma status is evaluated need not be the same as the number in the evaluation performed to identify the endpoint. For example, the plasma state may be assessed less than the number of assessments for identifying that endpoint.

In a first embodiment of the tenth form indicated above, the plasma treatment is performed in a processing chamber and at least one endpoint is associated with this plasma treatment. This plasma process is monitored to identify the occurrence of the first endpoint. Any endpoint detection technique can be used for the first embodiment of the tenth aspect, including what is presented below with respect to the eleventh to thirteenth aspects of the present invention. Also during the plasma treatment (the initial part of which plasma is typically unstable may be excluded), more preferably the "condition" of the plasma for the whole of the plasma treatment can be evaluated. One way of defining a "state" relating to the first embodiment of the tenth form is to match the cumulative result of all parameters that may affect the plasma in the processing chamber. This is at least about 250 nm to 1000 nm, defined as the first wavelength range, of plasma in the processing chamber that includes at least every 1 nm wavelength for the entire first wavelength range and at least a plurality of different times during the plasma treatment. This can be done by evaluating optical emission. Another way of indicating "state" monitoring of current plasma processing is to determine if it proceeds according to at least one plasma treatment previously performed in the same processing chamber. Accordingly, the features discussed above with respect to the seventh form of the invention can also be used in the tenth form of the invention.

A second embodiment of the tenth form involves generating plasma in a processing chamber and performing a first plasma step in the chamber. Associated with the first plasma step is a first endpoint, which is when the first plasma step produced the first set result. At least one characteristic of the plasma in the chamber is evaluated during the first plasma step using the first time resolution. Typically the same increment can be used in this evaluation, but this is not required by the second embodiment of the tenth form. In addition, an evaluation using a second time resolution different from the first time resolution is performed to identify the occurrence of the first end point. The "at least one property" indicated above is the plasma state during that plasma but is not necessary in this case.

An eleventh aspect of the present invention relates to monitoring a plasma process to identify the occurrence of a first endpoint associated with the plasma process. More specifically, at least two different techniques may be used to evaluate the current plasma process in this eleventh form to identify the first endpoint. In one of these techniques, only when the occurrence of the first end point is identified as an end point, or after each of these techniques identifies the occurrence of the first end point, it may be designated as an end point. This eleventh aspect of the present invention may be applied to any plasma process having at least one associated endpoint (eg, plasma recipes, plasma cleaning and controlled wafer operation performed on the product in the process chamber).

One of the techniques that can be used in this eleventh aspect is the optical image of the plasma in the chamber at the current optical emission of the plasma in the chamber and the previous time in the same treatment, preferably immediately before the optical emission is obtained. This involves comparing options. In one embodiment, such optical emission comprises a wavelength from about 250 nm to 1000 nm at least about every 1 nm. This optical emission is actually a "match" (e.g., where the difference between the pattern of the current optical emission and the pattern of the optical emission of the previous time is substantially no peak, especially after the initialization portion of the plasma is complete In other words, when there is no more substantial change in the optical emission, it can be determined that the end point has been reached.

Another technique for identifying endpoints that may be used in that eleventh form involves comparing a standard with the current optical emission of plasma in the chamber. This "standard" is the optical emission of the plasma in the chamber when it is determined that the end point has been reached from a previous run of the same plasma treatment in the same processing chamber. In addition, the criteria may be stored in a computer-readable storage medium. In one embodiment, such optical emission comprises a wavelength of at least about 250 nm to 1000 nm and at least about every 1 nm. This optical emission is actually a "match" (e.g., the difference between the pattern of the current optical emission and the pattern of the optical emission of the previous time is not actually peaked, especially if the end point of the plasma is completed, after reaching the end point. It is considered to be.

Another technique that can be used in this eleventh aspect of the invention includes determining whether there is at least a first change in the impedance of the processing chamber that is reflected at the optical emission of the plasma in the processing chamber. A change in "modal" in the plasma can indicate a change in impedance that in turn represents an endpoint. This "form" change may be a more abrupt and significant increase or decrease in the plasma treatment overall or at a particular wavelength intensity.

Another technique that can be used for endpoint identification with respect to the eleventh aspect includes evaluating the wavelength of at least one separate light that forms the plasma of the plasma treatment. The wavelength of this one light can be evaluated by judging the time at which the plot of intensity vs. time deviates by more than the set amount from the set formula (e.g. when there is no more "fit" between the current data and the formula). Can be. Accordingly, the features discussed above with respect to the ninth aspect of the invention may also apply to this part of the eleventh aspect. Also, the wavelength of one or more independent lights can be evaluated by judging when the change in slope over the wavelength time changes by more than the set amount. Second order derivatives may also be used.

A twelfth aspect of the present invention provides for the generation of a first endpoint associated with a plasma process (eg, plasma recipe, plasma cleaning, controlled wafer operation) or a separate / identifiable portion thereof (multiple recipes or plasma steps of the process). It is about the technique of identification. The optical emission of the plasma in the chamber is obtained from the process. Such optical emission comprises a wavelength of at least an amount of 250 nm to 1000 nm defined by the first wavelength range. The data analysis used to collect the optical emission is at least about every 1 nm. This means that optical emission is obtained at least about every 1 nm for the entire first wavelength range.

Identification of the first endpoint includes a comparison of the first optical output with the current optical emission of the plasma in the chamber. This first output may be an optical emission in the chamber at a previous time in the same plasma treatment, preferably just before the optical emission is obtained for the current optical emission. This first output may also be an optical emission at the time when the endpoint occurred in the same type of plasma process previously performed in the same process. In this case, the first output is stored in a computer-readable storage medium. In particular, after the initialization portion of the plasma has ended, it may be determined that the first end point has been reached if the comparison indicated above appears to at least substantially "match" the current optical emission and the first output.

Confidence in the designation of the first endpoint by the technique indicated above may be improved by using the second technique by not specifying the first endpoint until both techniques have "seen" the first endpoint. Any of the techniques discussed above with respect to the eleventh aspect of the present invention may be used in the twelfth aspect for this purpose.

A thirteenth aspect of the present invention is directed to identifying the occurrence of multiple endpoints in a single plasma process. Many plasma recipes can include many different plasma steps. Each of these plasma steps typically has an identifiable endpoint associated with it. Accordingly, the eleventh aspect of the present invention allows identification of at least two or more endpoints and includes each endpoint associated with the plasma process. Each technique identified in the eleventh aspect described above can be used in the thirteenth aspect.

Cleaning of the processing chamber is in accordance with the fourteenth aspect of the present invention. The product is loaded into the processing chamber. The processing chamber is closed, after which a first plasma treatment is performed on this product. Data on this plasma process is obtained. From this data a judgment on the state of the chamber is performed. In particular, a determination is made as to whether the interior of the chamber is “dirty” enough to clean the chamber from the plasma treatment previously carried out in the chamber. If identified as such a “dirty chamber” state, a person can be notified, an action can be initiated, or both can be performed. Suitable actions may include terminating the current plasma process, generating an alarm, suspending the execution of other plasma processes until they are sufficiently clean, or any combination thereof.

Various features may be used by the fourteenth aspect of the present invention, which may be used alone or in any combination in this fourteenth aspect. The data obtained in the current plasma treatment may be the optical emission of the plasma in the chamber. The wavelength obtained comprises at least about 250 nm to 1000 nm defined by the first wavelength range. Data may be obtained at least about 1 nm for the entire first wavelength range.

Various techniques can be implemented to determine if the processing chamber is clean using data obtained from the plasma in the chamber. A detailed description of these techniques relates to optical emission data. The current optical emission (from the current time in processing) can be compared with the criteria stored in the computer-readable storage medium. This criterion may be the optical emission of plasma from the same chamber, rather than the plasma treatment previously performed in the chamber if the chamber is determined or deemed to need cleaning. When the current optical emission matches at least practically this criterion, it is believed that the chamber needs to be cleaned. "Match" can be based on any recognition technique. Determining the difference between the current optical emission and the reference can also be used for this purpose.

Another method of determining when to clean the chamber using data obtained in plasma includes endpoint detection. Each endpoint detection technique described above with respect to the tenth to thirteenth aspects of the present invention uses data related to the plasma in the chamber to identify the endpoint. If any stage of the various stages of plasma treatment is longer than the preset maximum time limit, the chamber is deemed to need cleaning. If the total time to complete the whole plasma treatment is longer than the preset maximum time limit, the chamber is deemed to need cleaning. Endpoint detection techniques can be used in each of these cases. In the case of multiple stages of plasma treatment, to determine the total time spent in the treatment, an endpoint may be identified for each stage of the multiple stage treatment, or simply the end point of the last stage of the plasma treatment.

The plasma cleaning operation is performed in the fifteenth aspect of the present invention. By having the plasma present in an "empty" chamber, plasma cleaning removes material from the interior of the processing chamber. During the plasma cleaning no product (eg wafer) is contained in the chamber.

Optical emission of the plasma in the "empty" chamber is obtained at a number of times during processing in the first embodiment of the fifteenth form. At least a portion of the optical emission pattern is compared to a first reference pattern (eg, plot of intensity versus time) during at least a portion of the process. This first reference pattern can be stored in a computer-readable storage medium. This first standard pattern can also be from plasma optical emission in a plasma process previously performed in the same processing chamber when the plasma cleaning has reached an end point. If the optical emission pattern and the first reference pattern from at least one time point in the processing are within the set amounts of each other, the plasma processing is terminated. The "set amount" is planned using a pattern recognition technique as well as finding a difference and notifying when the difference is not actually any intensity peak.

Various features may be used by the first embodiment of the fifteenth aspect of the present invention, which features may be used alone or in any combination for this fifteenth aspect. The wavelength is acquired at least about every 1 nm for at least about 250 nm to 1000 nm (first wavelength range) for the entire first wavelength range and is used to compare with the first reference pattern. All such optical emission or only a portion thereof can be used. That is, the first embodiment of the fifteenth form includes comparing a first reference pattern in which a particular wavelength in the optical emission of the plasma includes the wavelength corresponding to the pattern. In addition, the first embodiment may include comparing the first reference pattern with the entire pattern of optical emission obtained in the current plasma process.

Problems may arise when using a particular wavelength as the first reference pattern. One such problem is to find a specific wavelength in the optical emission of current plasma processing, for example, by a change in wavelength. Additional features may be used in the first embodiment of the fifteenth form to specify this kind of situation. In this regard, the first reference pattern may be part of a second reference optical emission segment that includes multiple wavelengths. The intensity peak associated with the corresponding wavelength of the first reference pattern is its intensity (eg, this is the "largest" intensity around a given wavelength), one or more other intensity peaks (eg, that wavelength is in the predetermined wavelength range). Can be identified for the " middle " or both, and then the first reference pattern in the first reference optical emission segment to identify the corresponding wavelength in the current optical emission segment. Notification of this characteristic of the wavelength for can be used.

In addition, when the plasma processing reaches a preset maximum time limit before the current pattern, and the first reference patterns are in the set eyes of each other, the first embodiment of the fifteenth aspect is terminated. Typically this will mean that current plasma processing is not effective for treating the interior of the processing chamber. In this form, wet cleaning of the chamber can be initiated. Then, another plasma cleaning operation can be started to treat the residue of the wet cleaning.

Monitoring the rate of change in the optical emission of the plasma in the chamber corresponds to the second embodiment of the fifteenth aspect involved in plasma cleaning. In this regard, the difference between the optical emission at the current time in the treatment and the optical emission from the previous time (previously the immediately preceding time) in the same plasma treatment is determined. If this difference is equal to or less than the first amount, the current plasma processing is terminated. Accordingly, in the second embodiment, the time to end the plasma cleaning is regarded as the state in which the current plasma processing no longer changes the internal state of the processing chamber at the required rate. All or part of these "additional" features described above with respect to the first embodiment may also be implemented in the second embodiment.

Conditioning wafer operation is shown in the sixteenth aspect of the present invention. At least one conditioning wafer is loaded into the processing chamber, where plasma processing is performed. Plasma processing typically etches a pattern on a conditioning wafer that is something other than an integrated circuit or pattern that is not associated with a semiconductor device. Plasma processing of the conditioning wafers is monitored by obtaining optical emission of plasma in the chamber. Based on the monitoring results of one of the plasma processes performed on the conditioning wafer, a number of conditioning wafers are processed in this manner until the conditioning wafer operation is completed. Thereafter, a production wafer operation is initiated where at least one production wafer is loaded into the chamber, where a plasma recipe (eg, one or more plasma steps) is performed. This production wafer is removed from the chamber and at least one semiconductor device is formed therefrom. Other processing of the production wafer may be required before the actual semiconductor device is used. Thus, since no semiconductor device is formed from the production wafer, this distinguishes the production wafer from the conditioning wafer. Instead, the conditioning wafer is typically discarded or rebuilt for use as the conditioning wafer.

Various features can be used by the sixteenth aspect of the present invention, which can be used alone or in any combination in the sixteenth embodiment. The health of the conditioning wafer operation, the health of the production wafer operation, or both can be evaluated. Accordingly, any of the techniques described above with respect to the seventh and tenth aspects of the present invention can also be implemented in the sixteenth aspect. The optical emission obtained in controlled wafer operation, production wafer operation, or both, includes a wavelength of at least about 250 nm to 1000 nm, and such optical emission can be obtained at least about every 1 nm over this range. All or part of this data can be used in the comparison based on the termination of the conditioning wafer operation.

Endpoint detection techniques can be used to terminate the conditioning wafer operation. Accordingly, any endpoint detection technique described above for the ninth to thirteenth aspects may also be implemented in the sixteenth form. The termination of the conditioning wafer operation may also be based on when successive implementations of the plasma processing on the conditioning wafer are within a predetermined amount of each other as determined through the data obtained in the processing. That is, the end of the conditioning wafer operation indicates that the conditioning wafer operation has reached a stable state determined by the evaluation of the optical emission data (e.g., the processing of one conditioning wafer appears to be at least substantially the same as the processing of the next conditioning wafer). Is considered. Termination of the conditioning wafer may also be based solely on the data obtained in the conditioning wafer operation. In other words, there is no need to analyze the wafer before production wafer operation begins. Also, replacement of one or more plasma cleaning operations, wet cleaning operations, or consumables may begin before commencement of the conditioning wafer operation.

Management of wafer distribution for a wafer production system including at least two processing chambers is shown in the seventeenth aspect of the present invention. In a first embodiment, at least two chambers are involved in the plasma processing in which the wafer is constructed. Each plasma process performed in these chambers is monitored in at least some aspects. If the monitoring of current plasma processing on one of the chamber's wafers does not detect the presence of one or more conditions, the wafer will continue to be processed within this chamber. This state includes the presence of a "dirty chamber", a known error state, an unknown state, or a combination thereof, as the terms used for the sixth and fourteenth forms described above. The distribution of the wafer to a particular chamber may be stopped immediately after identifying the type of this state, or the stop may be delayed until a certain number of this type of state occurs in multiple plasma processing. That is, a given chamber will not be "off line" until such an identical state (or other state) has been identified in a number of implementations.

If the stopping of wafer processing in any chamber is based on the identification of a “dirty chamber” condition, the chamber may be cleaned in some way. Plasma cleaning, wet cleaning, replacement of consumables, or a combination thereof is determined as appropriate "cleaning" in connection with the first embodiment of the seventeenth form. When the chamber is cleaned, dispensing of the wafer for carrying out the plasma treatment thereon is restarted. The occurrence of a known error during plasma processing of the wafer in one of the chambers results in the modification of one or more process control parameters indicative of this error. Finally, when an unknown state occurs, the first embodiment considers the analysis of plasma processing to confirm the cause after the termination of this. A second embodiment of the seventeenth form relates to the implementation of plasma treatment for a product in at least three chambers. Wafers are distributed to these chambers using a first sequence. If the monitoring of the plasma processing of one of the chambers has identified the presence of a given state, modification of this order begins. Any of the above identified for the first embodiment can also be applied to the second embodiment as well. In this regard, corresponding features from the first embodiment can also be implemented in the second embodiment.

Finally, the third embodiment of the seventeenth aspect includes the distribution of the wafer to at least two processing chambers for the execution of plasma processing. The time required to complete each plasma treatment is monitored. The dispensing sequence used is based on this monitoring time. For example, the dispensing order may include maximizing the use of the "fastest" processing chamber.

An eighteenth aspect of the present invention relates to a type of virtual optical filter used for monitoring plasma processing operations. Optical emission data for the entire first wavelength range (eg, the wavelength range extending from the first wavelength to the second wavelength, the distance defined by the bandwidth) can be obtained in the first plasma process in the first processing chamber. The second wavelength range is selected to monitor at least one aspect of the first plasma treatment. The second wavelength range is a subset of the first wavelength range (ie, has a smaller bandwidth). That is, the second wavelength range is completely within the first wavelength range and is smaller. Thus, only a portion of the optical emission obtained in any plasma treatment is used to evaluate this treatment in at least some manner according to the eighteenth form.

Monitoring of a portion of the plasma treatment requires optical emission data in one wavelength range or in a particular wavelength range, while monitoring of another portion of the same plasma treatment requires optical emission data in another wavelength range or at different wavelengths. Need. Similarly, monitoring one form of plasma processing requires optical emission data within or at a predetermined wavelength range, while monitoring other forms of plasma processing is optical within other wavelength ranges or at different wavelengths. Requires emission data. The main advantage of the eighteenth form is that any physical adjustments are made to control this scenario so long as the optical emission required to monitor any plasma treatment or portion thereof is within the first wavelength range of the optical emission data to be collected. Is not necessary. In short, the eighteenth mode avoids the situation where one bandpass filter is required to monitor one type of plasma processing and another bandpass filter is required to monitor another type of plasma processing. In the eighteenth aspect, one for optical emission data to change the optical emission data to be used to monitor a given plasma process or to change the optical emission data to be used to monitor a completely different plasma process. Information is required with the intention to change monitoring. For example, optical emission data over a first wavelength range may include a particular subset of a first wavelength range (eg, a particular wavelength or wavelength range) by a database, or plasma monitoring (eg, plasma state module, endpoint detection module). It can be listed and stored on a computer-readable recording medium so that it can be selectively retrieved if it is required for use by plasma monitoring. That is, each wavelength is assigned some type of identifier, such as entering an identifier that corresponds to a plasma monitoring module that needs all that is needed to retrieve optical emission data at this wavelength. In order to retrieve optical emission data over a predetermined wavelength range, only an identifier corresponding to each of both ends of the wavelength range needs to be input to the required plasma monitoring module. By acquiring optical emission data over a relatively large wavelength range, an infinite subset of the data in this relatively large wavelength range can be applied to plasma processing or portions thereof according to the eighteenth aspect of the present invention.

One aspect of plasma processing that can be monitored through the eighteenth aspect is to identify the occurrence of at least one endpoint associated with the plasma processing carried out in the processing chamber. An "end point" is defined as when the plasma process realizes or operates a predetermined set result (eg, removal of a predetermined layer). The occurrence of an endpoint may be attributed to the monitoring of one or more individual wavelengths each contained within the first wavelength range or to the monitoring of one or more wavelength ranges each contained within the first wavelength range but not having the same bandwidth, or any combination thereof. Monitored by

Another aspect of the plasma treatment that can be monitored through the eighteenth form is to determine whether the plasma treatment currently carried out in the processing chamber has been performed by at least one plasma treatment previously performed in the same processing chamber. While this may be done by comparing the optical emission data over the first wavelength range, this is done using the smaller wavelength range for monitoring purposes, through the eighteenth form. In this regard, the second wavelength range may have a bandwidth of at least 50 nm that is not greater than the first wavelength range. Typically, the intensity of the various optical emission of the plasma during any plasma treatment typically undergoes at least one or more many variations throughout the plasma treatment. One method of monitoring plasma processing according to the eighteenth aspect is to generate a plot of the optical emission region in the second wavelength range versus time. "Area" in this regard reflects or relates to the intensity of the optical emission in the second wavelength range. This plot is displayed on a computer monitor for the operator to check. From this plot, another plot can be generated for changes in the optical emission region over time in the second wavelength range. This plot is also displayed on a computer monitor for operator confirmation. The change in the plot of area versus time for the second wavelength range can be generated using data defining the plot of area versus time only, instead of actually plotting the area of the second wavelength range. In any case, the end point occurs in a plot of change of area versus time in the second wavelength range, or is identified with any event shown or the like. For example, “event” means that when a threshold of a predetermined negative slope exceeds a range of change in an area plot with respect to time, a change in the extent of the rate of negative slope is a change in an area plot with time. When in, the threshold of positive slope may exceed the range in the area plot over time, or when any change in the degree of positive slope is within the change in area plot over time. Not allowing the designation of an end point before the expiration of a predetermined period of time in the plasma process or a portion thereof (e.g., permitting the designation of the end point within a predetermined time period during which the plasma is filled in the process chamber initiating the plasma process) Not allowing end point designation within a predetermined time of at least one change for the plasma processing system to change one plasma recipe into another plasma recipe, such as making a change in feed gas for the plasma. Not requiring, meeting or exceeding a predetermined threshold of mean squared error related to the change in the area plot over time, and not permitting endpoint designation after a predetermined time has expired in plasma processing or a portion thereof. Different kinds of prerequisites, such as It can be adopted.

Multiple wavelengths or wavelength ranges may be used to monitor plasma processing according to the eighteenth aspect, and each of these wavelengths or wavelength ranges may also be within a first wavelength range from which optical emission data is collected in the current plasma processing. It does not require any physical changes to the plasma monitoring system. This can be done for each step of the plasma treatment. Another possibility is to monitor at least one endpoint for the current plasma treatment, and at the same time of the same wavelength from the plasma treatment previously performed in the same processing chamber as the optical emission data from the wavelength range having a bandwidth of at least 50 nm. By comparing the optical emission data, the state of plasma processing is monitored.

A nineteenth aspect of the present invention relates to identifying a wavelength range suitable for monitoring plasma processing for generation of predetermined endpoints of plasma processing. This wavelength range for endpoint monitoring is arranged, such as the wavelength range extending from 250-265 nm (250 nm wavelength is one end point of the wavelength range and 265 nm wavelength is the other end point of the wavelength range). It has a predetermined bandwidth, with two ends defined by two different wavelengths. Each endpoint of the plasma treatment may have a corresponding endpoint indication wavelength range identified according to the nineteenth aspect. The "end point" is also when a predetermined set result is achieved by plasma processing, such as when the predetermined layer is etched on the wafer. The nineteenth aspect will be described with respect to selecting a first wavelength range having a first bandwidth and to be used to identify a first endpoint for the first plasma treatment. Optical emission data over a second wavelength range with a second bandwidth is obtained in the first plasma process. The second wavelength range preferably includes a wavelength in the range of at least about 250 nm to 1000 nm, with a wavelength of at least about every 1 nm for the entirety of this range. This optical emission is also obtained in the plasma treatment every 1 second during most but not all of the first plasma treatment.

The third wavelength bandwidth is selected to be smaller than the second bandwidth of the second wavelength range and also to define specific optical emission data collected in the first plasma process. Plots are generated for the optical emission data collected in the first plasma treatment over a plurality of wavelength ranges having a third wavelength bandwidth and a subset of the second wavelength range. Each plot may define one of these subsets of wavelength ranges and will show changes in the region of that wavelength range over time. The region of that wavelength range is one that reflects or relates to the intensity of the optical emission in a particular wavelength range.

From these multiple plots, the minimum wavelength range can be selected as the first wavelength range to identify the occurrence of the first endpoint during the first plasma treatment.

Consider the following example showing the nineteenth form. Optical emission data is collected in the first plasma treatment for a second wavelength including at least about 250 nm to 1000 nm. The third bandwidth may be selected at 5 nm. Each wavelength range having a bandwidth of 5 nm and plotted to identify a suitable endpoint indicating wavelength range can be represented by an endpoint evaluation wavelength range. To mitigate the need to have knowledge of the details of the first plasma process in advance to identify a first wavelength range that can be used to designate the first endpoint in the next performance of the same first plasma process, various endpoints. The number and relationship between the evaluation wavelength ranges may be selected to include at least most, more preferably all, of the second wavelength range for the optical emission data collected in the first plasma treatment. Accordingly, the endpoint evaluation wavelength ranges may be arranged in an overlapping relationship or in an end-to-end format. For example, the first endpoint evaluation wavelength range may be 250-255 nm, the second endpoint evaluation wavelength range may be 255-260 nm, the third endpoint evaluation wavelength range may be 260-265 nm, and in that example 995 It can be up to the endpoint evaluation wavelength range of -1000.

Once a plot is generated for each endpoint evaluation wavelength range, it is examined to identify one or more endpoint evaluation wavelength ranges that may be candidates for designating a first endpoint for the first wavelength range. The basic criterion for selecting any endpoint evaluation wavelength range as a possible candidate of the first wavelength range is that a change in the area plot over time in that endpoint evaluation wavelength range occurs near the time at which the first endpoint occurs in the process. Have an identifiable kind of event. For example, an "identifiable event" means a predetermined change in the degree of the rate of negative slope when the threshold of the predetermined negative slope exceeds the range of change in the plot over time for any endpoint wavelength evaluation range. Is within the change in the area plots over time for any endpoint wavelength evaluation range, when the threshold of positive slope exceeds the range in the area plots over time for any endpoint wavelength evaluation range, or It can be when the change in the degree of inclination of is within a change in the area plot over time for any endpoint wavelength evaluation range. Specifying an endpoint from a change in the area plot over time for various first preconditions, such that a predetermined threshold meets or exceeds the mean square error of that plot. May be charged.

An endpoint evaluation wavelength range that does not have the required identifiable or salient event is excluded from consideration as the first wavelength region for designating the first endpoint. If there is only one endpoint evaluation wavelength range with a remarkable or identifiable mandatory event, this particular endpoint evaluation wavelength range may be selected as the first wavelength range for designating the first endpoint. In many cases, there will be multiple endpoint evaluation wavelength ranges where the plot of each change in the area over time indicates an event that is discernible or distinct at the time the first endpoint occurs. If the "ends close enough" of many endpoint evaluation wavelength ranges, the first wavelength range for designating the first endpoint may be selected to include each endpoint evaluation wavelength range. For example, if a plot in the wavelength range of 275-280, a plot in the wavelength range of 285-290, and a plot in the wavelength range of 300-305 have an identifiable or distinctly required event, the first wavelength range is 275. It will be defined as a wavelength range of -305 nm. If the bandwidth is about 15 nm or more away from two adjacent endpoint evaluation wavelength ranges, it is preferable that two adjacent endpoint evaluation wavelength ranges not be included to define a particular first wavelength range. That is, if the plot of the endpoint evaluation wavelength range of 275-280 nm has an identifiable or distinctly required event, the endpoint evaluation wavelength ranges of 280-285, 285-290, 290-295 and 295-300 nm are identifiable or prominent. If you do not have the required event, and the endpoint evaluation wavelength range of 300-305 nm is identifiable or distinct required event, it is not desirable to define the wavelength range of 275-305 nm as the first wavelength range for designating the first endpoint. . This is because there is a 25 nm gap between the 275-280 and 300-305 nm endpoint evaluation wavelength ranges. In this case, the endpoint evaluation wavelength regions of 275-280 and 300-305 both remain candidates for the first wavelength range for designating the first endpoint. One of these two endpoint evaluation wavelength ranges is implemented for testing and / or specifying endpoints in the manner described above for accuracy of production.

A twentieth aspect of the present invention features a type of "data player" in which optical emission data on plasma processing is stored, and then one or more changes in the plasma monitoring system or a method by which plasma processing is monitored or evaluated. Can be built. That is, the twentieth form can be used to perform various kinds of experiments on how to make certain changes or combinations in plasma monitoring systems, specific plasma monitoring techniques, or the effect or performance of results achieved by monitoring plasma processing. have. The "monitor" may be for a plasma state, endpoint, or both. The twentieth form is connected to the plasma monitoring system in at least some way and is preferably implemented in a long distance system that repeats or mimics at least a portion of the plasma monitoring system, so that different types of experiments do not affect the product. May be performed "off-line". This is discussed with respect to the twenty first aspect of the present invention shown below. What is a "data player" and its value for the plasma processing operation can be explained by example. A wavelength range of 290-295 nm is monitored to specify a first endpoint in the first plasma treatment, optical emission for an extended wavelength range from 250-1000 nm is obtained / collected, and a first performance of the first plasma treatment Suppose it is stored for the whole. After the first execution of this first plasma treatment is completed, the kind of "test" designates a first end point in the next execution of the same plasma treatment in the same processing chamber that has a different wavelength range within the wavelength range of 250-1000 nm. You can evaluate whether it is more appropriate. This "replays" the optical emission data in the first implementation of the first plasma process for the endpoint detection module used to designate the first endpoint, and monitors another wavelength range for designating the first endpoint. By sending to this endpoint module for the purpose of doing so. For example, an endpoint detection module will be sent to compare the wavelength range of 290-295 nm actually used to designate the first endpoint in the production setting for a wavelength range of 400-405 nm. Other parameters of the endpoint detection module can be modified and tested in the same general manner. Other endpoint detection techniques can also be tested in the same general manner. Other wavelength ranges for monitoring plasma conditions and / or other techniques for monitoring plasma conditions can also be tested in the same general manner.

A twenty-first aspect of the present invention is a type of plasma monitoring network. A first embodiment of this twenty-first aspect is a plasma processing system comprising a plurality of chamber clusters. Each chamber cluster includes at least one plasma monitoring system interconnected with one plasma processing chamber and at least one processing chamber of a particular chamber cluster. This may be a single plasma monitoring system for the entire chamber cluster, each chamber with each plasma monitoring system, or a single plasma monitoring system providing multiple processing chambers in any chamber population.

The first embodiment of the twenty-first aspect also includes a clean room system. One or more clean rooms define this clean room system. Each chamber cluster is contained within a clean room system. Typically, multiple chamber clusters can be located in the same clean room. However, the first embodiment of the twenty-first aspect also includes the case where one or more chamber clusters are located in a number of different clean rooms.

The master remote station is fluidly connected to the plasma monitoring system of each chamber cluster. This main remote station is located outside the clean room system and includes a display (eg, a computer monitor) and a data entry device (eg, a keyboard). In addition, there is a separate chamber cluster remote station for each of the plurality of chamber clusters. Like the main remote station, each chamber cluster remote station is located outside of a clean room system and includes a display (eg, a computer monitor) and a data input device (eg, a keyboard). However, unlike the main remote station, any chamber cluster remote station is only connected to the plasma monitoring system associated with the chamber cluster, not to the plasma monitoring system of the other chamber cluster.

In the above-described first embodiment of the twenty-first aspect of the present invention, various features can be implemented, and these various features can be implemented alone or in any combination. The primary remote station will have more access to any plasma cluster in any chamber cluster than the chamber cluster remote station to any of the same chamber clusters. For example, multiple modules can be associated with each of the plasma monitoring system. The primary remote station can access a larger number of modules for the plasma monitoring system than the corresponding chamber remote station (ie, the chamber cluster remote station that interfaces with the plasma monitoring system of a single chamber cluster).

Examples of modules shown above include player modules, statistical analysis modules, control modules and data review modules. The data player module may have the characteristics described above with respect to the twelfth aspect of the present invention. The statistical analysis module may be configured to perform various types of statistical analysis. For example, the performance of a single processing chamber can be statistically analyzed against it (eg, performance change over time). In addition, the performance of one processing chamber may be statistically analyzed with respect to the performance of other processing chambers in the same or different chamber clusters. Similar comparisons can be made to chamber clusters. That is, the performance of a single chamber cluster can be statistically analyzed against it (eg, performance change over time). In addition, the performance of any chamber cluster can be statistically analyzed against one or more other chamber clusters.

The control module controls the performance of the plasma monitoring system involved or one or more variable parameters associated with the plasma monitoring system. Each parameter is a wavelength range monitored to specify any endpoint related to the plasma treatment, the wavelength monitored for comparison with the previous performance of the same plasma treatment in the same treatment chamber with the performance of the current plasma treatment in any treatment chamber. Range, timing considerations (eg, when to start, end, or both, various aspects of monitoring of plasma processing). Typically, only the main remote station can access the control module for any plasma monitoring system, such that a chamber cluster remote station connected to the same plasma monitoring system can have one or more data player modules, statistical analysis modules. Or just provide access to the data review module.

Finally, the data review module depicts presently plasma processing carried out in any processing chamber in at least some manner. The data review module is configured to simultaneously display multiple plasma processes performed in multiple chambers. Examples showing how plasma processing confirms through the data review module display plots of changes in time over a specific wavelength range that can be used to specify any endpoint, or plots of measurement wavelengths to specify endpoints. Or one or more plots of how the current plasma process proceeds for a previous run of the same plasma process.

The invention will now be described with reference to the accompanying drawings in order to assist in the description of various related features. One application of the invention is for treatment with plasma to provide at least one function or to achieve at least one established result, and the invention will now be described in this respect. More specifically, the chemical vaporization of the resultant portion of an embodiment of the plasma process (eg, a "set result") set to accumulate one or more films, such as a wafer on which the semiconductor device is formed, etches the removed portion of one or more layers. Deposition, addition or removal material will pop out of the set result.

Wafer Production System (2)-Figure 1

The wafer production system 2 is generally for performing one or more plasma-based processes (single or multiple steps) on the wafer 18 as described in FIG. Semiconductor devices may be formed from wafer 18 processed by system 2, including integrated circuit chips. The system 2 generally includes a wafer cassette 6 that stores a plurality of wafers 18 and allows the wafers 18 to be easily transferred to and from the system 2. One wafer cassette 6 is disposed in each of the two load lock chambers 28 of the wafer production system 2. The wafer processing assembly 44 is sent to each load lock chamber 28, removing at least one of the wafers 18 from the wafer cassette 6, and transferring the wafer (s) 18 of the wafer production system 2. Transfer to one of a plurality of processing chambers 36 (four chambers 36a-d shown). Other arrangements may be utilized for the purposes of the present invention.

Control of the wafer processing assembly as well as various other components of the wafer production system 2 is provided by a main control unit 58 (hereinafter referred to as MCU). In one embodiment, MCU 58 is a computer having at least one computer-readable storage medium and at least one processor, such as a desktop PC or a main-frame with satellite terminals. Properly integrating the MCU 58 with one or more other components of the wafer production system 2 is such that the MCU 58 is capable of opening one or more, preferably all chambers 36 of the wafer production system 2. To be the main controller (eg, controlling the plasma in each of the chambers 36). Integration includes operatively interfacing the MCU 58 with these various components and may include a wafer processing assembly 44. Operator, as well as data entry device 60 (e.g., mouse, light pen, keyboard) for allowing the operator to fill in information related to or used by wafer production system 2 Other hardware, such as a display 59 (eg, a CRT or computer monitor) for providing visual-based information to the user, may also be operatively interconnected with the MCU 58.

The plasma in chamber 36 processes the enclosed wafer 18 in some way (eg, etching to remove a layer of material). Transparent windows 38 are provided on each chamber 36 to allow optical emission data to be obtained on the plasma recipe performed on the wafer 18 in each chamber 36. Once plasma processing is complete, wafer processing assembly 44 removes wafer 18 from each processing chamber 36 and moves wafer 18 to one of the wafer cassettes 6 in associated load lock chamber 28. Return Once all the wafers 18 in one of the cassettes 6 have been plasma processed, the wafer cassette 6 is removed from the load lock chamber 28 and into another cassette 6 having a new wafer 18 to be processed. Replaced. This can be done automatically by a robot or the like manually by the operator.

Wafer Cassette 6-FIG. 2

Further details regarding the embodiment of the wafer cassette 6 incorporated in the wafer production system 2 of FIG. 1 are presented in FIG. The wafer cassette 6 comprises a frame 10 defined by a pair of end panels 8 as well as a pair of sidewalls spaced by sidewalls 22 interconnected by a back panel 26. The front of the frame 10 is a wafer cassette 6 for the wafer processing assembly 44 to remove the wafer 18 from the corresponding wafer cassette 6 and to provide the wafer 18 to the corresponding wafer cassette 6. It is substantially open to advance into and retreat from it. A plurality of partitions 16 laterally spaced and laterally disposed (e.g., each partition 16 is at least generally perpendicular to the longitudinal axis of the cassette 6) are adjacent wafer 18 Is provided within the frame for the purpose of maintaining separation of the. Each pair of neighboring partitions 16 defines a pocket 14 in which a single wafer 18 is located. Loading of the wafer 18 into the wafer cassette 6 on which the plasma is to be processed places one of the end panels 8 of the cassette 6 on a suitable support surface and only one wafer 18 has pockets. This can be done by manually loading the wafer 8 into the cassette 6 to be placed in any of 14. Once the wafer cassette 6 is loaded with the wafer 18 to the desired extent, the cassette 6 can be transferred to a suitable load lock chamber 28. The wafer cassette 6 is then placed on one of its ends 8 at some position such that its substantially open front face is accessible and accessible by the wafer processing assembly 44. Other configurations for the wafer cassette 6 can be utilized by the wafer production system 2, and automation is the loading of the wafer 18 into any one or more cassettes 6 and the load lock of the wafer production system 2. It may be carried out in the delivery of the cassette 6 to and from the chambers 28.

Wafer Processing Assembly 44-FIGS. 3A-3B

Further details regarding the wafer processing assembly 44 integrated into the wafer production system 2 of FIG. 1 are shown in FIGS. 3A-3B. Other types of wafer processing assemblies are described in US Pat. No. 5,280,983 and "Two-Axis Magnetically Connected Robots," published in Jan. 25, 1994, entitled "Robot's Autoloader and Locking Semiconductor Processing System". And US Pat. No. 5,656,902 to Lawrence, issued August 12, 1997, all of which are incorporated herein by reference in their entirety. The wafer processing assembly 44 of FIGS. 3A-3B generally includes a robot's wafer handler 48 disposed within the central chamber 70 of the wafer production system 2. Thus load lock chambers 28 and processing chambers 36 are disposed relative to the wafer processing assembly 44. The movement of the wafer's wafer handler 48 of the robot is operatively interfaced with the wafer handler 48, which in turn is operatively interfaced with the MCU 58 (FIG. 1) and controlled by the MCU 58. Is realized through The wafer handler 48 includes a pivot 50 to position the wafer processing assembly 44 such that the wafer handler 48 is operatively interfaced with one of the load lock chambers 28 or the processing chambers 36. May be pivoted or rotated relative to pivot 50. The wafer 18 is each load lock chamber 28 or processing chamber 36 by a wafer blade 66 that interfaces with one of the wafers 18 when placed in one of the pockets 14 of the wafer cassette 6. ) Is provided to the chamber. A vacuum chuck or the like may be integrated on the wafer blade 66 to hold the wafer 18 on the blade 66. Wafer blade 66 is integrated with arm assembly 54 which extends and retracts through a pivot-like operation of axially advancing and retracting wafer blade 66 in a proper position.

Processing Chamber 72-FIGS. 4 and 5

One embodiment of a processing chamber that can be integrated into the wafer production system of FIG. 1 as one of the chambers 36 is presented in more detail in FIG. Other types / configurations of processing chambers are described in US Pat. No. 5,614,055 to Fairborn et al., Published March 25, 1997 entitled “High Density Plasma CVD and Etch Reactors,” and “Plasma Etching with Surface Protection Against Corrosion of Walls. Reactor "wafer production system for the purposes of the present invention, including those disclosed in U. S. Patent No. 5,641, 375, issued June 24, 1997, which is incorporated herein by reference in its entirety. 2) can be utilized. The processing chamber 74 of FIG. 4 is one or more from the wafer (s) 18 disposed in the chamber 36 to perform a plasma etch operation on the wafer (s) 18 when disposed therein. In order to remove the layers). The processing chamber 74 includes chamber sidewalls 78 disposed about the central, longitudinal axis 76 of the chamber 74. Access to the processing chamber 74 is, for example, a chamber cover 82 interconnected with the chamber sidewalls 78 in such a way that at least one portion of the chamber cover 82 can be removed from the chamber sidewalls 78. Can be provided by In the illustrated embodiment, the chamber cover 82 is removed only to access the interior of the processing chamber 74 for maintenance, cleaning or both. The window portion 124 extends through a portion of the chamber sidewall 78 and is aligned with the transparent window 112. The window 112 includes an inner surface 116 and an outer surface 120, which causes the processing chamber 74 to be visible to the outside and furthermore plasma processing performed on the wafer (s) 18 in the chamber 74. It provides a path to plasma that provides a mechanism for obtaining optical emission data of an image.

The protection of the chamber sidewalls 78 and the chamber cover 82 from the effects of plasma treatments performed in the chamber 74 is a bell jar each formed from a transparent dielectric material (eg, quartz, sapphire). jar 90 and bell roof 86. The bell jar 90 is radially inward from the interior surface of the chamber sidewalls 78 (eg, in the center of the chamber 74, in the direction of the longitudinal axis 76). The bell roof 86 is disposed above the bell jar 90 and can move axially in a direction at least substantially parallel to the central, longitudinal axis 76 of the chamber 74 through interconnection with the elevator 98. Movement of the elevator 98 may be desirable for one or more purposes. For example, this movement may be used to change the space between the showerhead 94, which is an electrode or “plasma generator” for the chamber 74, and the wafer bearing 106 / wafer platform 102 in one embodiment. Can be.

The wafer bearing 106 is disposed radially inwardly in the bell jar 90 in a spatial relationship therewith, and the wafer platform 104 is disposed on the top surface of the wafer bearing 106. In one embodiment, both the wafer bearing 104 and the wafer platform 106 are formed of silicon-based materials because the wafer 18 is typically formed from silicon-based materials. Wafer 18 is introduced into processing chamber 74 through wafer access 80 extending through chamber sidewalls 78 and disposed in a flat arrangement on top surface of wafer platform 104. Various mechanisms plasma treatment on the wafer 18 in the chamber 74, such as by pulling a vacuum through the vacuum port 108 formed on the wafer platform 104 or by using electrostatic charges (not shown). It may be used to hold the wafer 18 of the wafer platform 104 during the implementation of. Delivery of the wafer 18 to the processing chamber 74 is provided again by the wafer blade 66 (FIGS. 1 and 3A-B) of the wafer processing assembly 44. After the wafer blade 66 is withdrawn from the processing chamber 74, a vacuum is generated in the processing chamber 74 before the plasma processing begins.

The showerhead 94 is interconnected with the elevator 98 to be able to move axially and is also formed from a silicon-based material for the reasons indicated above in one embodiment. The showerhead 94 includes one or more holes (not shown) for the purpose of dispersing the applied gases in the vacuum chamber 84 in a manner that defines the desired gas flow pattern for the plasma. Gases are provided to the showerhead 94 through a gas inlet port 100 formed in the quartz bell roof 86. While suitable gases are contained within the processing chamber 74 under other suitable conditions (eg, pressure, temperature, flow rate), a suitable voltage is required to generate plasma in the chamber 74 above the wafer plasma 104. One or more wafer bearings 106 and showerheads 94 may be applied. Thus not only the showerhead 94 but also the wafer bearing 106 and the wafer platform 104 also act as electrodes in the illustrated embodiment as mentioned. The electric field generated by these electrodes also operates to fluidly confine the plasma to the space between the electrodes.

5 illustrates one embodiment of a gas delivery system 150 that may be used to provide gases to the processing chamber 74 of FIG. 4 for a given plasma processing operation. Other systems may also be utilized. The gas delivery system 150 includes a plurality of storage tanks 154, each fluidly interconnected with the processing chamber 74 directly or indirectly. Storage tanks 154a-d may be utilized to include one or more types of applied gases that define the gas composition of the plasma in vacuum chamber 84. Each storage tank 154b-d is fluidly interconnected with the mixer 166 by gas lines 158b-d, where applied gases pass through the showerhead 94 via a gas line 158e. May be suitably mixed before being provided to the processing chamber 74. Mixing of the applied gases may also occur in a manifold (not shown), each of the applied gases flowing into the manifold individually and the manifold may be included in or part of the processing chamber 74. . The manifold will then interface with the gas inlet port 100, and this type of manifold can also be used in combination with the mixer 166. In some cases the composition of applied gases provided to the processing chamber 74 to define the plasma can be difficult to burn. This situation is improved by including a suitable gas in the storage tank 154a. A gas composition is included in the storage tank 154a that can be combusted more easily than the composition of the applied gases. The combustion of the plasma is then applied by defining the flow of combustion gas from the storage tank 154a to the processing chamber 74 and according to the flow of the desired applied gases from the storage tanks 154b-d. It will be affected by using combustion of combustion gases to burn gases.

Plasma Monitoring Assembly 174-FIGS. 6 and 7

The components described above are clearly important for the overall functionality of the wafer production system. However, the present invention more particularly relates to the monitoring or evaluation of the plasma itself. Thus, the following components can be integrated into any type of plasma-based system, including the previous one.

An embodiment of an assembly for monitoring / evaluating plasma processes and it is shown in FIG. 6 that is integrated in the wafer production system 2 of FIG. 1. The plasma monitoring assembly 174 operatively interfaces with the window of the processing chamber 36 by receiving optical emission of plasma passing out of the processing chamber 36 through the window 38. These optical emission are "collected" by a suitable fiber optic cable 178 which is located at or close to the outer surface 42 of the window 38. The arrangements showing the manner of maintaining the windows of the processing chamber and the fiber optic cable in a fixed positional relationship are presented in FIGS. 36 and 39. During the processing of the wafer, optical emission of the plasma in the processing chamber 36 enters the fiber optical cable 178 and is directed to the spectrometer assembly 182. Both scanning-type and solid state spectrometers can be used as the spectrometer assembly 182. Assembly 182 may also include one or more suitably interconnected spectrometers, each of which obtains optical emission data from different regions. The spectrometer assembly 182 separates the optical emission into a plurality of individual wavelengths and converts the separated light components into corresponding electrical signals 186 of arrays of charge coupled devices ( Hereinafter referred to as CCD array 186).

The computer-readable signal is provided by the CCD array 186 to the plasma monitoring control unit 128 (hereinafter referred to as "PMCU 128"), which is the primary control mechanism of the plasma monitoring assembly 174. In one embodiment, PMCU 128 includes at least one motherboard, at least one analog-to-digital conversion board, at least one central processing unit (CPU) for each motherboard, and at least one floppy disk drive, A computer that can be configured to include (but is not limited to) one or more types of computer-readable storage media, such as at least one hard disk drive and at least one CD ROM drive. One or more data entry devices 132 (e.g., mouse, light pen, keyboard) for allowing a representative to enter information used or related by the plasma monitoring assembly 174 as well as visual / hearing-based to the operator. Other hardware, such as display 130 for providing information, may be operatively interconnected to PMCU 128. One PMCU 128 may be provided for each chamber 36, or the PMCU 128 may be configured to service multiple chambers 36. The PMCU 128 is also operatively interfaced or interconnected with the MCU 58 of the wafer production system 2 so that the PMCU and the MCU 58 can communicate with each other.

The PMCU 128 includes a plasma monitoring module 200 and its sub-modules are on a computer-readable storage medium connected with the PMCU 128 (eg, on removable computer diskette (s), hard drive). On the CD (s)). The plasma monitoring module 200 and its sub-modules are shown in FIG. One sub-module is a start-up module 202 which currently provides a way to access other sub-modules via the plasma processing module 250. The current plasma processing module 250 of the plasma monitoring module 200 monitors or evaluates various types of plasma processing that may be performed in the chamber 36 through evaluation of the optical emission data of the plasma in the chamber 36. To facilitate. In the case of the embodiment of FIG. 6, optical emission data is collected by the fiber optical cable 178 and passed to a spectrometer assembly 182 that breaks up the light into its individual light components. A data sample of these optical emission components can then be utilized in the current plasma processing module 250 via the CCD array 186 as described above.

Evaluation or monitoring of current plasma processing via current plasma processing module 250 preferably collects optical emission from the plasma to include at least wavelengths in the UV range to those in the near infrared range and thus includes the visible light spectrum. This makes it easy. In one embodiment, the optical emission of the plasma in the processing chamber 36, which can be obtained and utilized for evaluation (e.g., by the current plasma processing module 250, manually by appropriate personnel), is at least It includes wavelengths from about 250 nanometers to about 1,000 nanometers, and more preferably includes wavelengths from at least about 150 nanometers to about 1,200 nanometers. The above-mentioned desired range or bandwidth of the optical emission obtained and / or collected by plasma in the chamber 36 and comprising each of the above-mentioned ranges or bandwidths will be referred to as the "preferred optical bandwidth".

The light or wavelength resolutions within the desired optical bandwidth and over the desired optical bandwidth are preferably no more than about 1 nanometer, more preferably no more than about 0.5 nanometer (currently considering a wavelength resolution of 0.4). The term "wavelength resolution" in this document means the degree of separation between neighboring wavelengths in the optical emission data collected. Therefore, if the wavelength resolution used to collect the optical emission data from the plasma in chamber 36 is 1 nanometer, an interval of less than 1 nanometer may be any two data points within and across the desired optical bandwidth. Will exist between them. Although the same intervals will typically be utilized in connection with the wavelength resolution within and across the desired optical bandwidth, this is the case when the "wavelength resolution" includes the same intervals, unequal intervals, and combinations thereof. There is no need. In the following, the magnitude for the above-mentioned light or wavelength resolution will be referred to as "preferred data resolution".

Another factor related to the effect of current plasma processing module 250 on the amount of optical emission data of plasma in chamber 36 is the times this data is taken during plasma processing. Optical emission data of the plasma in the chamber 36 is preferably obtained at least every second, more preferably at least every third second. Although the same intervals will typically be utilized in relation to the times at which the optical emission data is collected for the plasma in the chamber 36, it is likely that the same time intervals, unequal intervals and combinations thereof will be utilized. It does not have to be the case. In the following, the time sizes for obtaining the optical emission data of the plasma in the above-mentioned chamber 36 will be referred to as "preferred data collection time resolution".

The spectrometer assembly 182 shown in FIG. 6 should be able to meet the criteria mentioned above, and many implementations may be utilized. For example, the spectrometer assembly 182 includes a scan that includes a structure for the spectrometer assembly 182 to scan the spectrum to obtain data at the desired data acquisition time resolution, including the desired optical bandwidth using the desired data resolution. Type (eg, scan the first optical emission segment or region of 250-550 nanometer wavelengths, scan the second segment of 500-750 nanometer wavelengths, and scan the 700-950 nanometer wavelengths). The third segment is scanned, each of which overlaps to reduce the probability of losing data and further facilitate alignment of the spectral segments). Spectrometer assembly 182 may also be a solid state device. Multiple subunits or processing cards may be connected in a parallel relationship that functions similar to the scanning type mentioned above. That is, each subunit or processing card of the solid state device will then provide information about a particular optical emission segment or area within the desired optical bandwidth and at the desired data collection time resolution using the desired data resolution.

Exemplary Plasma Recipe Spectrum-FIG. 8

A representative or exemplary spectrum of computer-readable form that can be utilized for the present plasma processing module 200 of FIG. 7 for analysis is shown in FIG. 8. Only part of the preferred optical bandwidth is presented by spectrum 246. However, it contributes to explain certain principles related to the present invention because the current plasma treatment does not need to have the full desired optical bandwidth in each case. Spectrum 246 is in the wavelength range from 400 nanometers to 700 nanometers and at any fixed point in time at which plasma treatment is performed in the processing chamber 36 of FIG. 1 (eg at current time t _n) . Includes data). Various characteristics of the spectrum 246 of FIG. 8 may be used in the analysis taken by the current plasma processing module 250 of FIG. These characteristics include the overall pattern of the spectrum 246, one or more positions and intensities of one or more intensity peaks 248 in the spectrum 246, and one or more relative positions and relative intensities of the one or more intensity peaks 248. .

The current plasma processing module 250 of FIG. 7 operatively interfaces with the collection of spectra obtained from one or more plasma processes previously performed in the processing chamber 36. In general, the current plasma processing module 250 receives data from the current plasma processing performed in the plasma processing chamber 36 and, in one case, except for (investigation module 1300), evaluates the current plasma processing or For monitoring, this data or at least a portion thereof is compared with data from one or more plasma processes previously performed in the same plasma processing chamber 36 as this one. This comparison provides some information about the current plasma processing depending on which sub-module (s) of the current plasma processing module 250 are utilized. Each of these sub-modules will be discussed in more detail below with respect to the relevant figures. However, an understanding of how data is currently organized for access by the plasma processing module 250 may facilitate a more complete understanding of these sub-modules.

Plasma Spectrum Directory 284-FIGS. 9-12B

One embodiment of how data collection of previous plasma processes can now be organized for use by the plasma processing module 250 is shown in FIG. The plasma spectral directory 284 of FIG. 9 includes many subdirectories or subsets of similarly classified data, and is typically specific to a single processing chamber 36 (wherein data in directory 284 is specific chamber 36). The same directory 284 can be used for multiple chambers 36, if it is indexed in some way, preferably by one or more submodules of the plasma processing module 250, preferably in the PMCU or Computer-readable media associated with the PMCU (eg, one or more computer diskettes, hard drive, one or more CDs). The relevant data contained in each data entry in each of these subdirectories of the plasma spectral directory 284 is the spectrum (optical emission data), and in all but one case (compensation light subdirectory 310) the relevant time. And unless otherwise stated here is typically the spectrum of the plasma in the processing chamber 36 within the desired optical bandwidth and at the desired data resolution.

Plasma treatments used as a standard of alignments for evaluating / monitoring plasma treatments currently carried out in the treatment chamber 36 or evaluating the state or condition of plasma during such plasma treatments are entitled and referred to as “spectrum of normal plasma treatments”. 9 is stored in a subdirectory of the plasma spectrum directory 284 of FIG. 9 (hereinafter referred to as "normal spectrum subdirectory 288"). Actual spectral data from one or more plasma processes performed in the processing chamber 36 is stored in the normal spectral subdirectory 288 associated with this chamber 36. The various categories or types of plasma treatments mentioned above, such as plasma cleaning operations (with or without prior wet clean) or plasma cleaning, such as plasma cleaning and controlled wafer operation, are defined in the normal spectral subdirectory ( 288, and one or more executions of plasma processes within each of these categories may also be stored in subdirectory 288. Each category of plasma treatment is similar to a "folder" or normal spectrum subdirectory 288 (a folder for "normal" plasma treatments, for "normal" plasma cleanings performed without first wet cleaning chamber 36. Individual folders, separate folders for "normal" plasma cleanings performed after the wet cleaning of chamber 36, and separate folders for "normal" conditioning wafer operations) or grouping similar processes together In order to have it as representative of a particular category / type of plasma processing.

The spectral data is then sent to the current plasma processing module 250 to determine whether subsequent plasma processings performed in this same processing chamber 36 are processed in accordance with at least one plasma processing stored in the normal spectral subdirectory 288. Used by The entries in the normal spectral subdirectory 288 are thus used as a "model" or "standard" for the evaluation of the plasma processes performed in this same process chamber 36 at some future time. How data actually enters the normal spectral subdirectory 288 will be discussed in detail below with respect to the startup module 202 and FIGS. 13-14. It is sufficient to say that entries in the normal spectral subdirectory 288 come from the actual plasma processes performed in the chamber 36. These plasma treatments are identified or estimated (and typically confirmed later, for example) by a desired or predetermined way or more specifically to perform without any substantial / significant errors or anomalies (eg by post-plasma treatment tests). do). No pre-analysis or knowledge of any plasma processing is required to use the current plasma processing module 250 and the normal spectral subdirectory 288 to evaluate the plasma processing currently performed in the processing chamber 36. The spectral data from the plasma treatment ABC performed in the given chamber 36 is from any plasma treatment ABC that any subsequent performance of this same plasma treatment ABC in this same chamber 36 is already stored in the normal spectral subdirectory 288. It may be stored in the normal spectral subdirectory 288 on what day for the purpose of determining what is to be performed according to the spectral data. Errors or anomalies already encountered while performing plasma processing in the processing chamber 36 are subdirectories of the plasma spectrum directory 284 of FIG. 9 entitled " spectrum of " " abnormal " plasma treatments " (Hereinafter referred to as " abnormal spectral subdirectory 292.) Data relating to any of the plasma treatments mentioned above in connection with the normal spectral subdirectory 284 is also stored in the abnormal spectral subdirectory 292. Can be stored, and the above-mentioned organizational techniques can be utilized herein as well.The entries in the abnormal spectral subdirectory 292 are defined in a manner desired or in any manner desired by any plasma treatment performed in the processing chamber 36. As it proceeds (e.g., processing is associated with plasma processing in the normal spectral subdirectory 288) ), And furthermore when an error or abnormal cause or causes are identified in the plasma spectral directory 284. This is typically done in the plasma process as well as the possible spectral data from the rest of the plasma process. Requires analysis of at least that portion of the spectral data from when the error or anomaly occurs for the first time Errors or anomalies in some plasma processing will typically be demonstrated by the spectrum of the plasma in the processing chamber 36. In addition, By obtaining data for the current plasma processing at the desired optical bandwidth, at the desired data resolution, and at the desired data collection time resolution, the opportunities for obtaining optical emission data indicative of the error or anomaly are improved.

When the spectral data for the current plasma processing performed in the processing chamber 36 deviates from the corresponding spectral data in the normal spectral subdirectory 288 in the determination of the current plasma processing module 250, the module 250 may enter the current plasma. This "deviated spectral data" for processing can be compared with the spectral data in the abnormal spectral subdirectory 292. Any number of operations can be started if the current plasma processing module 250 confirms a "match" between the spectral data from the plasma processing currently performed in the processing chamber 36 and the spectral data in the abnormal spectral subdirectory 292. Can be. These operations are associated with the issuing or controlling the control of chamber 36, issuing the appropriate alert (s) of error conditions, as discussed in detail below with respect to processing alert module 428 of FIG. 14. Processing one or more aspects, or both.

Plasma that is currently performed in the subject processing chamber 36 and does not match any plasma processing stored in the normal spectral subdirectory 288 and does not match the corresponding spectral data in the abnormal spectral subdirectory 292. The spectral data from the treatment is called "Spectrum of" Unknown "Plasma Treatments" and is defined as a subdirectory of the Plasma Spectrum Directory 284 (hereinafter referred to as "Unknown Spectrum Subdirectory 296") defined by 296. ) Is recorded. There are many situations when data from plasma processing currently performed in processing chamber 36 is recorded in unknown spectral subdirectory 296. Any `` new '' any error or anomaly (ie, spectral data indicating an error or anomaly not previously recorded in the abnormal spectral subdirectory 292) to the plasma processing module 250 is unknown to the spectral subdirectory 296. Will result in relevant data from the current plasma process recorded in. Another situation when data can enter unknown spectral subdirectory 296 is when the current plasma processing performed in the processing chamber 36 is actually a new plasma processing in relation to the current plasma processing module 250. That is, the plasma process can be performed very well according to the desired or desired manner, but the data for this particular plasma process is not previously recorded in the normal spectral subdirectory 288 of FIG. As such, the spectral data of the current plasma process will not match any plasma process in the normal spectral subdirectory 288 and must not match any corresponding spectral data in the abnormal spectral subdirectory 292. . When a "unknown" condition is encountered during operations, an appropriate alert can be issued, or the control of the current process can be handled or both.

Spectrum data recorded in the spectral subdirectory 296, which is unknown from previous plasma processes, will typically be analyzed by the person at some time after the process ends. If the spectral data from the plasma treatment recorded in the unknown spectral subdirectory 292 is identified as a new plasma treatment, and if it is intended to use this spectral data as a standard for evaluating further performances of this same plasma treatment on this same processing chamber. If a determination is made, this spectral data may be passed to the normal spectral subdirectory 292. Entries may also be made from unknown spectral subdirectory 296 to abnormal spectral subdirectory 292. Analysis of spectral data from a particular plasma process recorded in unknown spectral subdirectory 296 may lead to the conclusion that the spectral data relates to one or more specific errors / abnormalities that can be identified by its spectral data. . Relevant spectral data from unknown spectral subdirectory 296 may then be delivered to abnormal spectral subdirectory 292.

The plasma spectral directory 284 of FIG. 9 also includes data indicating when the endpoint has reached a full plasma process, such as a single or multi-stage plasma recipe or other plasma process, or a discernible portion thereof. The "end point" in the context of plasma processing or its discernible portion is that time in plasma processing when the plasma in the processing chamber 36 has achieved some desired result. Each plasma step in the plasma recipe typically results in desired desired results, such as indicating the end of the plasma cleaning that begins with chamber 36 without first wet cleaning, the plasma cleaning that begins after wet cleaning of the chamber, and controlled wafer operation. Has one or more properties in its corresponding spectrum indicating that has been achieved. Spectral data of plasma processing performed in chamber 36 identifies one or more spectra (or portions thereof, such as one or more individual wavelengths) indicating that the plasma processing has ended and the end point of the plasma processing or plasma processing step has been reached. Can be analyzed later. The spectral data indicating the endpoints from the various above mentioned categories of plasma treatments is a subdirectory of the plasma spectral directory 284 of FIG. Hereinafter referred to as "endpoint subdirectory 316". The present plasma processing module 250 is currently in the endpoint subdirectory 316 for issuing appropriate alarm (s) of confirmation of the endpoint condition, for processing one or more aspects of the control of the chamber 36 or for both. Information contained in the

Multiple implementations of plasma treatments within chamber 36 may “age” chamber 36 due to the nature of the plasma treatments, and this aging may in some way adversely affect the performance of chamber 36. have. Instructions that the chamber 36 requires some type of cleaning may be reflected by the spectrum of the plasma in the chamber 36. Spectrum data may be included in the plasma spectral directory 284 of FIG. 9 that corresponds to a condition requiring " cleaning " The "dirty chamber condition" spectral data may be recorded in the abnormal spectral subdirectory 292, in which case the "dirty chamber condition" will be characterized as a known error or anomalies matched with the above discussion about the abnormal subdirectory 292. will be. Alternatively, individual subdirectories may be employed as described in Figure 9 (hereinafter referred to as "chamber condition subdirectory 300"), which is defined by reference numeral 300 in the nature of "spectrum of dirty chamber condition subdirectory". The current plasma processing module 250 may use this information for “dirty chamber conditions” to ascertain whether the processing chamber 36 is in a condition to be cleaned and further appropriate actions should be taken thereafter. The final subdirectory of the plasma spectral directory 284 of 9 is the corrected light spectral subdirectory 310 which does not include the spectrum of the plasma from the chamber 36. Instead, one or more spectra of one or more corrected lights are subdirectories thereof. In general, the correction light whose spectrum is in the correction light subdirectory 310 is stored in the window of the processing chamber 36. A comparison is made between the spectral pattern of the correction light from the subdirectory 310 and the spectral pattern of that portion of the correction light reflected by the inner surface 40 of the window 38 on the processing chamber 36. The results of are used to determine the type and amount of correction that must be performed in connection with the operation of the current plasma processing module 250 as discussed in detail below with respect to the correction module 562 and FIGS. 40-48.

The above-described structure of the plasma spectral directory 284 and its various subdirectories presented in FIG. 9 is now general in organizing categorically similar data for use by the plasma processing module 250 and its various submodules. Structure. The manner in which the data currently used by the plasma processing module 250 is substantially stored is not particularly relevant to the purpose of the present invention. However, it should be understood that data should now be stored in a manner that allows the plasma processing module 250 to execute its monitoring / evaluation functions in a timely manner. Preferably, this is at least substantially "real time" based, and sub-second capture, analysis, and control may be utilized through module 250. More specifically, the acquisition of data, analysis of this same data, and the start of protocol (s) based on this analysis can all be completed in less than one second through the current plasma processing module 250.

In continuing discussion of the storage of spectral data currently used by the plasma processing module 250 in connection with the directory / subdirectory structure discussed above in connection with FIG. 9, how the data is stored in this directory / subdirectory structure. One embodiment of whether it can be stored is shown in FIG. Although only normal spectral subdirectory 288 and abnormal spectral subdirectory 292 are described for convenience and only data for one category of plasma processing stored in normal subdirectory 288 is shown (plasma prescriptions), plasma Spectrum directory 284 may have the same subdirectories as shown in FIG. A review of the normal spectral subdirectory 288 of FIG. 10 shows that the spectra for the multiple plasma recipes that have already been performed on the product in the processing chamber 36 associated with the plasma spectral directory 284 are their own main data entry ( Respectively. This would also be the case for other categories of plasma processes stored in the normal subdirectory 288. That is, each main data entry 350 is left to store information used to evaluate the plasma processes that are to be performed in this same processing chamber 36.

Each main data entry 350 for a given plasma process has a plurality of data segments 354 associated therewith, each of which is at a certain time and preferably at a desired data resolution. It will include at least one spectrum (eg, FIG. 8) of the plasma in the processing chamber 36 within the desired optical bandwidth. The spectrum associated with each data segment 354 may be stored as a single spectrum covering the desired optical bandwidth, or may be stored as multiple spectra that collectively encompass the desired optical bandwidth. The spectrum for the data segments 354 can be obtained using the desired data collection time resolution (eg, by the plasma monitoring assembly 174 of FIG. 6 or any of the embodiments shown in FIGS. 31 and 37 below). It is periodically taken over the performance of the plasma treatment in the processing chamber 36 through the window 38 on the chamber 36. Although the entirety of the plasma treatment can be recorded in the normal spectral subdirectory 288 in this manner, the plasma is sometimes more unstable when it first enters the chamber 36. Thus, it may be desirable not to retain optical emission data in the normal spectral subdirectory 288 from this unstable period.

The entries of plasma processes in normal spectrum subdirectory 288 may be comprised of a plurality of entirely different types or kinds of plasma processes within a given category or type, as shown in FIG. The plasma recipe A is stored under the main data entry 350a, which is different from the plasma recipe B stored under the main data entry 350b, and the plasma recipe B is different from the plasma recipe "X" stored under the main data entry 350c. . Multiple executions of the same plasma recipe or process may also be stored in normal spectrum subdirectory 288 (not shown) if desired. For example, the spectral data from two separate runs of plasma recipe A for the same type of product in the associated processing chamber 36 may actually be included in the normal spectral subdirectory 288. The evaluation of the current plasma recipe performed on the product in that processing chamber 36 will then potentially include a comparison of the optical emission data for the current processing with respect to both of these main data entries 350.

Optical emission data in the normal spectral subdirectory 288 of FIG. 10 may be used to increase the speed of retrieval of the normal spectral subdirectory 288 by the current plasma processing module 250, in order to eliminate the storage of excess data. It can be bundled or simplified for both. Figure 11 shows one way in which this can be achieved in the case of a normal spectral subdirectory 288a for one example where the plasma recipe A-D is stored in the directory 288a. The same principles may apply to any type of plasma processing stored in the normal spectral subdirectory 288.

Plasma recipe B are each time t ₁ under the main data entry (358a) under the plasma recipe A and the main data entry (358b) time t from the (first time data is recorded in the subdirectory (288a) for the plasma treatment) _n ( The "nth" time data has the same spectrum for the purposes of the current plasma processing module 250 up to, and recorded in the subdirectory 288a for that plasma. Instead of storing the spectrum twice over this time range in the normal spectral subdirectory 288a (once under the main data entry 358a for plasma recipe A and once under the main data entry 358b for plasma recipe B). Multiple spectra from this time range are stored only once in common data segments 362a-c. More than three common data segments 362 can obviously be used. Nevertheless, common data segments 362a-c are associated with both plasma recipe A of main data entry 358a and plasma recipe B of main data entry 358b. However, at time t _{n + 1} (ie, the first time data is recorded in normal spectrum directory 288a after time t _n ) and until the end of plasma processing in the example shown by FIG. 11, under main data entry 358a. The spectrum of Plasma Recipe A and that of Plasma Recipe B under main data entry 358b are different for the purpose of the current plasma processing module 250. As such, each of the plasma recipe A under main data entry 358a and the plasma recipe B under main data entry 358b are normal from time t _{n + 1} to t _{n + x} (the "xth" time data is normal after time t _n). Over their own individual data segments 366a-c and 366d-f). Although this is not the case in a commercial setting, each of the plasma recipes A and B ends at the same time (ie, time t _{n + x} ) for the purpose of the example of FIG.

The normal spectral subdirectory 288b of FIG. 11 also has main data entries 358c and 358d for the plasma recipes C and D, respectively. The same data storage concept used in connection with the plasma recipes A and B is similarly employed for the plasma recipes C and D in the normal spectral subdirectory 288a. The spectra of the plasma recipe C under the main data entry 358c and the plasma recipe D under the main data entry 358d are the same for the purpose of the current plasma processing module 250 from time t ₁ to time t _n . Instead of storing the spectrum twice over this time range in the normal spectral subdirectory 288b (once under the main data entry 358c for plasma recipe C and once under the main data entry 358d for plasma recipe D). Multiple spectra from this time range are stored only once in common data segments 362d-h in the normal spectral subdirectory 288a. Common data segments 362d-h are associated with both plasma recipe C of main data entry 358c and plasma recipe D of main data entry 358d. However, at time t _n and in the example shown by FIG. 11, up to time t _{n + x} of the plasma recipe, the spectrum of the plasma recipe C under the main data entry 358c and the plasma recipe D under the main data entry 358d. Are different for the purposes of the current plasma processing module 250. As such, the plasma recipe C under main data entry 358c has its own individual data segments 366g-k over a period from t _{n + 1} to t _{n + x} , while the main data entry ( Plasma recipe D under 358d) in turn has its own individual data segments 366l-p over this same period of time. However, at time tn + x and at the tn + y to the end of the plasma recipe in the example shown by FIG. 11, the spectrum of plasma recipe C under main data entry 358c and the plasma recipe D under main data entry 358d. Is again the same for the purposes of the current plasma processing module 250. As such, plasma recipe C under main data entry 358c and plasma recipe D under main data entry 358d have common data segments 362i-z over a period from tn + x to tn + y. Although this is not the case in a commercial setting, each of the plasma recipes C and D ends at the same time for the purposes of the example of FIG.

Each data segment 354 of each plasma recipe stored under the main data entry 350 in the normal spectral subdirectory 288 of FIG. 10 stores a number of data types related to the monitoring of the current plasma processing with the current plasma processing module 250. It may include. A representative example is shown in FIG. 12A, where data of these various data types is provided in data fields 322 associated with each data segment 354. The spectral patterns of the plasma in the processing chamber 36 are an important data type for comparing the current plasma processing with the plasma spectral directory 284, which is in the spectral field 322d in the normal spectral subdirectory 288 of FIG. 12A. Stored. Each data segment 354 in the normal spectral subdirectory 288 also includes a time field 322a, where the time associated with the spectrum in the spectral field 322d is recorded (eg, when the spectrum is taken). Time to plasma treatment). Data in time field 322a may be used in various ways by current plasma processing module 250, as discussed in more detail below.

Additional information is associated with at least each main data entry 350 in the normal spectral subdirectory 288. "Relevant" in this context means that this information is associated with each main data entry 350 during some plasma processing or for only some time less than the total number of data segments 354 under a particular main data entry 350. It may be provided once, but it also means that this information includes the situation that is actually provided for each data segment 354 of the corresponding main data entry 350, which is undesirable because of the excess. The fields for these types of information are the plasma processing "genus" field 322h (e.g., to confirm that the main data entry 350 is a plasma recipe, plasma clean, or controlled wafer operation). For example, a wafer identifier field 322b, plasma processing " species, " for information corresponding to an identifier, such as a number or code, that has a plasma processing performance and appears on the wafer 18 used for tracking purposes. "Field 322c (a subset of plasma processing" genus ", such as other types of plasma recipes (e.g., plasma recipe A and plasma recipe B)), (function different from other parts of the processing Plasma processing step field 322e, maximum total plasma, to identify a specific plasma recipe or step of any other plasma Processing step time field 322f (eg, the maximum amount of time it takes to complete a given plasma step or other processing of a multi-stage plasma recipe), and a maximum total plasma processing time field 322g (eg, an entire plasma The maximum amount of time it takes to complete the process (each of its steps). None of this information would be applicable to any genus of plasma treatments and / or to any species of plasma treatments in any plasma treatment genus. The information for the wafer identifier field 322b may be read automatically from the wafer 18 and entered into the corresponding main data entry 354 (e.g., a scanner), although the information provided in the above-mentioned fields is provided. Information can be entered into the data entry device 132 of FIG.

The plasma spectral directory 284 of FIG. 10 also illustrates one way of storing data for entries in the abnormal spectral subdirectory 292. Review of the abnormal spectral subdirectory 292 of FIG. 10 evaluates future plasma processes where spectral data for multiple known errors or anomalies are performed in the same processing chamber 36 where these errors or anomalies occur. Are stored in the main data entry 346, respectively. As mentioned above, these errors in the main data entries 346 have preferably been identified (eg, the cause (s) of the error have been determined), so that plasma processing is performed in the processing chamber 36. It is a "known" condition that can be faced when doing so. Each main data entry 346 with one particular error therein is shown as having a plurality of data segments 354 associated therewith, each of which is a normal spectral subdirectory 288. Will include at least one spectrum (eg, FIG. 8) of the plasma from the processing chamber 36 indicating a deviation or error of the corresponding plasma treatment. The spectrum associated with each data segment 354 under the abnormal spectral subdirectory 292 may have a desired optical bandwidth utilizing the desired data resolution. Alternatively, the spectrum associated with the data segments 354 under the abnormal spectral subdirectory 292 includes the characteristic (s) indicating the error in question (ie, an optical emission segment that is smaller than the desired optical bandwidth but included therein). May only include that portion of the spectrum.

Additional information related to the abnormal spectral subdirectory 292 is shown in FIG. The spectral patterns for the data segments 354 under each main data entry 346 of the anomalous spectral subdirectory 292 (e.g., using the desired data collection time resolution) are the entire plasma in the processing chamber 36. It is illustrated to be recorded periodically during the performance of the process. Data for the entire plasma process may be retained in the abnormal subdirectory 292. In this case the time t ₁ referenced to the data segments 354m, 354q and 354u will be the first spectrum obtained in the corresponding plasma process, while time t _n is its end (end point or one step of the last step in the process). If not more, it will be the last spectrum obtained in that plasma treatment at the end of the plasma treatment. This situation may cause the storage of unnecessary data in the abnormal spectral subdirectory 292. Consider the situation where plasma processing is performed on the product in the processing chamber 36 and proceeds according to the normal spectral subdirectory 288 during the first 90 seconds of the plasma recipe. Suppose that only about 10 seconds are needed to complete the plasma recipe (ie achieve the results related to the last step of the treatment). Assume also that an error occurs at the 91 second mark in the current plasma recipe. If the data for the first 90 seconds of the plasma recipe does not provide any type of indication as an upcoming error reoccurring at the 91 second mark in the current plasma recipe of this example, this data is not useful for holding in the abnormal spectral subdirectory 292. Will not. In this case the spectrum at time t ₉₁ will be the first spectrum that does not "match" any of the plasma recipes in the normal spectral subdirectory 288. If one of these spectra sufficiently identifies the error, the other spectra need not be included under main entry 346 (not shown). However, it may be desirable to record at least some spectrum in the abnormal spectral subdirectory 292 at every spectra or at various time intervals obtained after the error has been confirmed and until the plasma processing ends at time t _n . The flexibility is provided by the abnormal subdirectory 292 in that the amount of data contained under each of the main data entries 346 in which errors are included may be selected independently. Thus, the data segments 354 under each main data entry 346 of the abnormal spectral subdirectory 292 may not necessarily provide a complete history of error-prone plasma processing.

Multiple data types may be included in each data segment 354 associated with each error in each main data entry 346 of the abnormal spectral subdirectory 292 of FIG. A representative example is shown in FIG. 12B, where these various data types are included in data fields 338 associated with each data segment 354 under each main data entry 346 in subdirectory 292. The spectral patterns of the plasma in the processing chamber 36 are an important data type for comparing the current plasma processing with the plasma spectral directory 284, which is an abnormal spectral subdirectory 292 of FIG. 12B of each data segment 354. Is stored in the spectral field 338b. Furthermore, the category or type of plasma treatment in question can be identified in the plasma treatment field 338e (e.g., plasma recipe, plasma cleaning, controlled wafer operation), and the specific type or type of plasma treatment of a given category or type, or The species may be identified in the plasma treated species field 338f (eg, a particular type of plasma recipe), and the type of plasma stage may be identified in the plasma treated stage field 338g.

Data added to the above-described spectrum may be associated with each of the data segments 354 under each main data entry 346 for known errors / abnormalities within the abnormal spectrum subdirectory 292. Each data segment 354 of each main data entry 346 may also include a time field 338a to contain information about the time associated with the spectrum in that data segment 354. Other information associated with the data segments 354 under each main data entry 346 for known errors / abnormalities within the abnormal spectral subdirectory 292 includes information identifying the error. Any literal confirmation or description of the error stored under the main data entry 346 may be included in the error field 338c of the abnormal spectrum subdirectory 292. This information is typically filled in manually by the person in charge using the data entry device 132 (e.g., Figure 6) after the spectrum has been analyzed and the cause (s) of the error (s) / error (s) identified. Will be.

The plasma processing module 250 now includes error checking capabilities as discussed in more detail below. Once the current plasma processing module 250 confirms the correspondence between the current optical emission data and the relevant spectrum or portion thereof in the abnormal spectral subdirectory 292, the information about the corresponding error / abnormal is returned in the error field ( Based on the information in 338c). In addition, corrective actions may be taken based on the contents of this same error field 338c. In this regard, each data segment 354 under each main data entry 346 also includes a protocol field 338d for known errors / abnormalities within the abnormal spectrum subdirectory 292. The information contained within the protocol field 338d will be somewhat related to how the error or anomaly can or should be handled, and more specifically what action or actions can or should be taken to handle the error. Single or multiple protocols may be stored in any one protocol field 338d (eg, one or more protocols may be suitable for handling certain conditions). Once the current plasma processing module 250 confirms the correspondence between the current spectrum and the relevant spectrum in the abnormal spectrum subdirectory 292, how the corresponding error / error is handled is included in the corresponding protocol field 338d. May be based on information.

Data relating to the process control parameters or conditions associated with the process chamber 36 may also be stored in each of the above-described subdirectories of the plasma spectral directory 284 for a particular data entry, in particular the abnormal spectral subdirectory 292. And unknown condition subdirectory 296. These are typically used in plasma processing such as the types of applied gases or composition of the plasma, temperatures in one or more regions of the chamber 36, pressure in the processing chamber 36, power settings and gas flow rates. Will include conditions to be monitored.

Pattern Recognition Module 370-Figure 13

Certain important principles of the present invention are directed to whether one spectral pattern matches another spectral pattern (e.g., the spectral pattern of the plasma in chamber 36 is the pattern of the relevant spectrum in the relevant subdirectory of the plasma spectral directory 288). And "match"). In many cases this determination can be made through the pattern recognition module 370 shown in FIG. Various "pattern recognition techniques" may be employed by the pattern recognition module 370 to provide the above-mentioned functionality. One such pattern recognition technique is implemented by the flow diagram shown in FIG. 13 and can be characterized as a point-by-point pattern recognition technique in general. The point-by-point pattern recognition technique implemented by the pattern recognition subroutine 374 of FIG. 13 is included in step 378. The intensity at the first wavelength of the current spectrum at the current time t _c (fixed time) is compared with the intensity at the same first wavelength of the relevant spectrum from the target directory. Regardless of which sub-module of the current plasma processing module 250 calls the pattern recognition module 370, which particular subdirectory of the plasma spectral directory 284 should be examined by the module 370 to match the patterns ( So we define the target directory). The sub-module calling the pattern recognition module 370 can also set what constitutes a "matching" pattern. That is, what can be the "match spectrum" relating to one sub-module of the current plasma processing module 250 cannot be the "match spectrum" relating to the other of its sub-modules.

If the intensities of two corresponding spectra are within the "match limit" of the other at this first wavelength in the corresponding optical emission, the patterns of the two corresponding spectra are initially considered "matches" and the analysis is second. Repeated at the wavelength, the second wavelength is defined differently from the first wavelength and defines a second "point" where the point-by-point analysis mentioned above is repeated. The particular "match limit" used by the pattern recognition subroutine 374 may be specific to any sub-module of the current plasma processing module 250 calling the pattern recognition subroutine 374 as mentioned. The point-by-point analysis described above is typically repeated by "evolving" along the entire current spectrum at pre-selected wavelength increments (eg, every nanometer). Typically a fixed wavelength increment will be utilized by step 378 so that a comparison between two corresponding spectra is made every "x" nanometers throughout the entire "bandwidth" of the spectrum. However, there is no need for equal intervals between each "points" checked by the pattern recognition subroutine 374.

Another match criterion that can be used in combination with the point-by-point comparison mentioned above relates to how many examined points must be within the "match limit" in order for two corresponding spectra to be considered a match. The sub-module calling the pattern recognition subroutine 374 may require that each " point " examined in that point-by-point analysis is within the match limit selected for the two spectra to be considered matches. Alternatively, anything less than 100% may also be utilized. For example, having at least 95% of the points within the match limit will equate to two corresponding spectra that are considered matches. Furthermore, the average variable of the multiple points examined by the pattern recognition subroutine 374 can be calculated and compared with the average associated with the associated spectrum from the target directory to determine if it is within some tolerance. Any combination of the above may be performed to determine what is a "match".

Many factors will affect the accuracy that contributes to the results achieved by the execution of step 378 in the pattern recognition subroutine 374 of FIG. One such factor will be discussed in the context of point-by-point comparison techniques, but is a "match limit" that would apply equally to the averaging discussed above. In this case, the "match limit" is that at some point at time t _c , the intensity associated with the point in the current spectrum will deviate from the intensity of the associated spectrum from the target directory, and is still at A quantity that is considered a "match". Two types of "match limits" that can be utilized include the raw difference basis and the percent difference basis. In the case of "raw difference difference", a fixed number of intensity units are set and input into the pattern recognition subroutine 374 to define the boundary of the "match" (eg, "raw difference difference based"). The limit here is that "x" is a value entered into the pattern recognition subroutine 374, in which the intensity at each wavelength of the current spectrum examined by the pattern recognition subroutine 374 is considered to be a "match". Can be set in ± "x" intensity units so that they must be within ± "x" intensity units of intensity at each of the corresponding wavelengths of the relevant spectrum from the directory). In the case of having a "match limit" based on "percent difference based", a fixed percentage is set and entered into the pattern recognition subroutine 374 to select between the corresponding intensities of the current spectrum and the associated spectrum from the target directory. Define the boundary of the "match" (e.g., the "unprocessed difference based" limit for the target directory in order for the intensity at each wavelength of the current spectrum checked by the pattern recognition subroutine 374 to be considered a "match". Can be set at ± "x" percent so that it must be within ± "x" intensity units of intensity at each of the corresponding wavelengths of the relevant spectrum from). Both “unprocessed difference” and “percent difference” can also be used simultaneously as “match limits” by the pattern recognition subroutine 374 (ie, both criteria are used so that the spectra are considered “matches”). Must be satisfied). The "match limit" may also apply equally when the above-mentioned averaging technique is used. Regardless of what type of "match limit" is employed, it enters for use by the pattern recognition subroutine 374.

Another factor influencing the precision that contributes to the results of the pattern recognition subroutine 374 of FIG. 13 is the analytical wavelength resolution used in the point-by-point analysis described above. "Analytical wavelength resolution" in this context is the wavelength increment over which the point-by-point analysis described above is performed over that spectrum. Although the plurality of wavelengths for the point-by-point analysis mentioned above may be arbitrary over the bandwidth of the spectrum, any pattern is preferably used, such as a fixed wavelength increment. For example, if the analytical wavelength resolution is set at 1 nanometer and input to the pattern recognition subroutine 374, the above-mentioned point-by-point analysis step 378 may be performed for each 1 nanometer over the entire desired optical bandwidth. It will be performed in meter increments. Preferably the analytical wavelength resolution used by the pattern recognition subroutine 374 is less than about 2 nanometers, more preferably less than 0.5 nanometers. In the following, this will be referred to as "preferred analytical wavelength resolution".

In the case of the summarizing step 378 of the pattern recognition subroutine 374 of FIG. 13 in which the current spectrum extends from 200 nanometers to 900 nanometers and the analytical wavelength resolution is 1 nanometer, (processing chamber 36 A comparison of the intensities is made at a wavelength of 200 nanometers from the current spectrum at the current time t _c ) from the current plasma process performed within and from the relevant spectrum from the target directory. Whether the difference between these two intensities is used in the raw difference theory, the percent difference theory, or the combination of the raw difference theory and the percent difference theory (e.g., in the case of a combination, the difference in intensity is the Must be greater than any number of inputs, and must be within any number of inputs of different ones), 200 nanometer wavelengths of the current spectrum and related spectra from the target directory, if within the "match limit" input to the pattern recognition subroutine 374. "Point" will be characterized as a "match" at the current time t _c . The point-by-point analysis will then continue at the 201 nanometer wavelength in the manner described above and will be repeated every 1 nanometer increment until the last 900 nanometer wavelength is reached. Then the results of the point-by-point comparison of step 378 with respect to the current spectrum at the current time t _c are shown for use by the submodule of the current plasma processing module 250 that called the pattern recognition module 370. Will be provided in step 380 of pattern recognition subroutine 374. Control of the plasma monitoring operations is then returned to the submodule of the current plasma processing module 250 that invoked the pattern recognition module 370 by step 382 of the pattern recognition subroutine 374.

Some plasma treatments change very quickly and some plasma treatments have a relatively short duration (eg, some plasma steps of plasma processing are less than about 5 seconds). Therefore, spectral data should be taken at least every second and analysis of this data should be completed by the pattern recognition subroutine 374 as soon as possible. In the case where the plasma treatment is a plasma recipe to be discussed in detail below with respect to the plasma state subroutine 253 of FIG. 21, identification of the current plasma recipe and analysis of the performance of the processing chamber 36 (eg, plasma state Must be completed at least before the next wafer 18 is loaded into chamber 36 for further performance of the plasma recipe for this product in chamber 36. The pattern recognition subroutine 374 of FIG. 13 may meet its needs through simplifying the analysis of the spectrum of the plasma in the processing chamber 36. The sum total of the analysis provided by the pattern recognition subroutine 374 is simply whether the pattern of the current spectrum is "matched" with the pattern of the relevant spectrum from the target directory. It is not necessary to locate or define the peaks in the spectrum of the plasma from the processing currently performed in the processing chamber 36 in the analysis used by the pattern recognition subroutine 374 at each of the limits. No attempt is made by the pattern recognition subroutine 374 to identify the various chemical species currently present in the plasma in the processing chamber 36 via spectral analysis. Again, the only judgment made by subroutine 374 is whether the current spectral pattern "matches" with the relevant spectral pattern in the target directory. In one embodiment, the pattern recognition subroutine 374 performs point-by-point analysis in less than about 1 nanometer (ie at least every 1 nanometer increment in less than about 1 second, preferably less than about 0.5 seconds). Step 378 may be performed on the spectrum defined by the wavelengths in the range of about 150 nanometers to about 1,200 nanometers having an analytical wavelength resolution.

Process Alert Module 428-Figure 14

Various conditions that may be encountered by the current plasma processing module 250 may result in the transfer of control to the processing alert module 428 of FIG. 14 or the sharing of control with the processing alert module 428. One or more subroutines may be included under process alert module 428. Each of these subroutines may provide various choices related to how the relevant condition or situation that caused activation of the processing alert module 428 is handled. In the case of the process alert subroutine 432 of Figure 14, the two categories of "actions" can be utilized to issue one or more alerts and in some way handle the control of the corresponding plasma process.

One or more alerts, alerts, or the like may be activated when the alert alert of the process alert subroutine 432 of FIG. 14 is enabled in its step 454 with respect to the condition or situation in question. At least one visual alert may be activated in step 458 of the process alert subroutine 432. Exemplary visual alerts include a general indication of the presence of a relevant condition (eg, flash light), a more specific indication of the condition (eg, providing a textual description of the identified condition or situation), or both. do. Appropriate locations where information regarding the conditions are provided are the wafer production system which can be characterized as a kind of master control panel for the display 130, wafer production system 2 associated with the particular processing chamber 36 in which the conditions are encountered. Display 59 associated with (2), any master control panel for the entire manufacturing facility incorporating wafer production system 2, any computer network including wafer production system 2, or any of the above Combinations. Other visual instructions may be employed alone or in combination with any of the above. Audio and some other types of alerts may also be employed.

Another option that can be utilized under the process alert subroutine 432 of FIG. 14 relates to the control of the plasma process in at least some manner, which can be accessed through step 436 of the process alert subroutine 432. Any spectrum associated with the identification of a condition or the condition itself, and which will trigger the activation of the process alert subroutine 432, may be included or associated within step 448 of subroutine 432. One or more protocols established while this spectrum or condition is encountered in chamber 36 may be included in associated step 450. Multiple spectra or conditions may be included in any one step 448. The commonality between these spectra / conditions involved in or related to step 448 is a taxonomy-like protocol included in its associated step 450.

Five categories of protocols are presented in FIG. Step 450a provides a protocol category that is a variation of one or more process control parameters. One or more spectra, one or more conditions, or both, from an abnormal spectrum subdirectory 292 may be included in step 448a of the processing alert subroutine 432 to access step 450a. Step 450a is directed to the protocol category in which an attempt is made to "process" (eg, correct / correct) the conditions in the current plasma process performed in chamber 36. The protocol associated with step 450a of the process alert subroutine 432 more specifically provides for the modification or adjustment of one or more process control parameters in a manner already determined to be suitable for processing the condition. Adjustment of process control parameters related to the current plasma process may be accomplished by operatively interfacing the process alert subroutine 432 with the appropriate process controller (s) (e.g., controlling wafer production system 2). It may be taken automatically if required by the facility integrating the wafer production system 2 by sending appropriate signals from the PMCU 128 to the MCU 58. Manual adjustment of one or more process control parameters is also planned by step 450a of process alert subroutine 432. In this case the execution of step 450a will involve informing the appropriate personnel the protocol (s) associated with the condition so that the personnel can manually initiate the appropriate action if necessary.

Notwithstanding the presentation of a single " modification process control parameters " protocol in FIG. 14, different process control modifications can be initiated for the different spectra / conditions associated with step 448a. One or more spectra may relate to a condition requiring modification of the process control parameters in one manner, while one or more spectra associated with another condition may require a modification of the process control parameters in another manner. In addition, any one or more spectra or one or more conditions associated with step 448a may have one or more processing control protocols associated with it. For example, if step 450a is not directly integrated with the associated processing controller (s), a list of possible modifications that may be taken to address the relevant condition (s) is provided for consideration by the appropriate personnel. Can be. Integration step 450a with one or more controllers associated with wafer production system 2 may still utilize multiple processing control protocols for any one or more spectra / conditions. Attempts to deal with that condition associated with step 448a may be promoted through the first protocol associated with this condition and step 450a for the first time. If this is not successful in handling the condition, a second protocol associated with that condition and step 450a may be taken, and may continue to be processed similarly.

Another category of protocols that may be included in the process alert subroutine 432 of FIG. 14 relates to terminating current plasma processing. The identification of one or more spectra representing one or more conditions, or the condition (s) itself, may be included in or associated with step 448b of subroutine 432 approaching step 450b. Although a typical termination of current plasma treatment would simply involve terminating the electrical flow resulting in gas flow to the chamber 36 and generation of plasma, step 450b may be followed by one or more protocols directed to terminating that plasma treatment. Include. Termination of the current plasma process may be performed by interfacing the process alert subroutine 432 with the appropriate process controller (e.g., by the PMCU 128, which transmits the appropriate signal to the MCU 58). It may be taken automatically if required by the facility incorporating (2). Passive termination of the current plasma process is also planned by step 450b. Execution of step 450b in this case may simply involve informing the appropriate personnel that the recommended conditions have been identified so that the end of the current plasma process performed in the processing chamber 36 can be taken manually if appropriate action is required. .

Cleaning operations may also be initiated via the process alert subroutine 432 of FIG. Simple identification of one spectrum or related condition from the abnormal spectral directory 292 or chamber conditions subdirectory 300 may be included in connection with / in relation to step 448e of subroutine 432 which in turn approaches step 450e. Can be. Step 450e is instructed to start some type of cleaning of the interior of the processing chamber 36. Cleaning operations are performed by wafer processing (e.g., by PMCU 128, which transmits the appropriate signal to MCU 58) through operatively interfacing the process alert subroutine 432 with the appropriate process controller (s). It may be taken automatically if required by the facility integrating the system 2. Passive execution of these operations is also planned by step 450e. In this regard, the execution of step 450e in the process alert subroutine 432 of FIG. 14 is terminated due to the messy chamber condition in which the current plasma process being performed in the process chamber 36 has been detected by the person in charge and continues with the cleaning operation. It may simply entail a notification that it should be started manually.

One or more spectra / conditions associated with step 448e may be associated with different protocols in step 450e. For example, one protocol of step 450e corresponding to one or more spectra / conditions associated with step 448e may begin according to the above. Other spectra or conditions associated with step 448e may approach the protocol of step 450e regarding wet cleaning, which may be initiated in accordance with the above.

Spectrum or conditions within chamber 36 whose nature of the wafer distribution sequence should be affected in some way by the presence of the spectrum or conditions are included or associated with step 448c. Thus, the protocol established in step 450c allows the wafer 18 to be distributed to the various processing chambers 36 of the wafer production system 2 via the wafer distribution module 1384, which will be discussed in detail below with respect to FIGS. 59-60. Handle the way it works. Processing the sequence of dispensing of the wafers 18 into the processing chamber 36 of the wafer production system 2 may cause the processing alert subroutine 432 to include the appropriate processing controller (s) (eg, wafer dispensing module 1384). It may be automatically taken if required by the facility integrating the wafer production system 2 by operatively interfacing with the MCU 58. Passive techniques also merely provide notification of the recommendation that the execution of step 450c of the process alert subroutine 432 should be automatically handled by the person in charge of the dispensing sequence to the chambers 36 of the system 2 due to the presence of the condition. Planned by step 450c in that it may be involved.

Finally, the plasma processing / plasma processing step endpoint can be processed via the processing alert subroutine 432 of FIG. In this regard, the identification of one or more spectra, or the plasma treatment / treatment step itself, which points to the end point of the plasma treatment or individual portion thereof (eg, the plasma treatment step) may be included in or associated with step 448d. . The protocol established in step 450d handles how identification of the occurrence of a particular endpoint should be handled. This may be due to the termination of the plasma treatment / treatment step, (eg, if the plasma step is not the last step of a given plasma recipe or other process) or to start the next plasma treatment / step, or the nature of the plasma treatment. Based on both of the above. Automation and manual techniques are planned by step 450d as in the cases mentioned above.

Control of the plasma monitoring operations may be carried out via the process of FIG. Abandoned by the alert subroutine 432. Depending on the circumstances, control may be returned to a particular submodule of the current plasma processing module 250 that has invoked the process alert module 370. Another option is to transfer control of plasma monitoring operations to the start-up module 202 in special cases or in all cases through the execution of steps 440 or 462.

Starting Module 202-Figure 15-16

Information on what happens in the processing chamber 36 (eg, the spectrum of the plasma in the chamber 36) has generally been discussed above and is currently discussed in more detail below in connection with the following related figures. Various "submodules" of the plasma processing module may be utilized in the current plasma processing module 250 for evaluation of the current plasma processing operation. Access to the various “submodules” of the plasma processing module 250 can now be controlled via the startup module 202 of FIG. As such, the startup module 202 can now be viewed as a main menu of types for various choices that can be utilized through the plasma processing module 250.

One embodiment of a startup routine that may be used by the startup module 202 is shown in FIG. 15 and provides the "main menu-like" functionality mentioned above. The startup routine 203 basically allows the person in charge to “input” the type of action that is taken so that control of the plasma monitoring operations can be passed to the appropriate submodule of the current plasma processing module 250. The "entry" provides a list on the display 130 associated with the PMCU 128 (e.g., Figure 6) of all actions that can be taken and the representative selects which choice should be pursued with the data entry device 132. Can be achieved. Another option would be to have a representative enter an action that is initiated using the data entry device 132. Another choice would be for the startup routine 203 to continuously scroll down through the list of various choices. Finally, when the current plasma processing module 250 can immediately begin comparing current plasma processing to the plasma spectrum directory 284 (e.g., using the appropriate command to examine the various subdirectories). It does not need to be provided.

Three "category" operations may be initiated through the startup routine 203. Initially, certain correction actions may be taken through step 136 of the startup routine 203 to access the correction module 562 through the execution of step 140. Correction module 562 will be discussed in more detail below with respect to FIGS. 40-48. Research relating to current plasma processing performed in chamber 36 may begin through step 144. For example, studies may be taken to identify one or more characteristics that indicate the end point of a particular plasma treatment or plasma treatment step. This is accomplished through the execution of step 148 of the startup routine 203 calling the research module 1300, which will be discussed in more detail below with respect to FIGS. 49-51C.

The final choice that can be utilized through the startup routine 203 of FIG. 15 relates to current plasma processes (ie, performing any plasma process in the chamber 36 not recorded in the plasma spectral directory 284). Plasma cleaning quality / production wafer (step 230), plasma cleaning operation without initial wet clean of chamber 36 (step 234), plasma cleaning operation performed after chamber 36 is wet cleaned. Each of the plasma processes, such as (step 238) and conditioning wafer operation (step 242), can be accessed via the startup routine 203. The endpoints of these types of plasma processes, their particular portions, or both, are discussed in more detail below in connection with FIGS. 52-58 and are called by the endpoint detection module (step 240 of the startup routine 203). 1200 may be determined. The "state" of these types of plasma processing is also evaluated through the plasma state module 252, which is discussed in more detail below in connection with Figures 21-25 and invoked through the execution of step 236 of the startup routine 203. Can be. Step 236 of the startup routine 203 of FIG. 15 relates to plasma state assessment and calls the startup subroutine 204 of FIG. Two main selections may be pursued in relation to the "plasma state" via the startup subroutine 204 of FIG. The current plasma treatment may be recorded in the normal spectral subdirectory 288 to be used as a standard for evaluating plasma processes that are continuously performed in chamber 36, or the current plasma treatment may be directed against normal spectral subdirectory 288 Can be evaluated. In this regard, step 208 of the startup subroutine 204 of FIG. 16 indicates whether plasma processing performed in the processing chamber 36 should be recorded in the normal spectrum subdirectory 288 with respect to this chamber 36. Inquire about. If the "response" to the inquiry of step 208 is "Yes", the startup subroutine 204 proceeds to step 224, where the state of the plasma in the processing chamber 36-specifically A determination is made as to whether the plasma is currently “ON” through light analysis by the plasma processing module 250. One way of determining if the plasma is "on" in the chamber is that the spectrum obtained from the processing chamber 36 is in the plasma spectral directory 284 or its subdirectories, such as through the pattern recognition module 370 of FIG. It is to determine when "matched" with any spectrum stored in anything. Another way this is done is to determine when a spectrum from the interior of the processing chamber 36 has at least some number of individual peaks of at least some intensity. Using the same principles discussed above in connection with the pattern recognition module 370 of FIG. 15 may also identify this type of spectrum through the current plasma processing module 250. Determining when there is at least some change in optical emission from within chamber 36 may also indicate that the plasma is “on” (eg, change from “dark” condition to “bright” condition). box). Regardless of how a determination is made as to whether plasma is present in the processing chamber 36, the "plasma on" indication may be appropriately communicated to the operator or others in one or more of the manners mentioned above.

Once the plasma is in the processing chamber 36, the startup subroutine 204 proceeds to step 228, where at least spectral data of the current plasma processing is recorded in the normal spectral subdirectory 288. Preferably, this includes the desired optical bandwidth at the desired data resolution and using the desired data collection time resolution. After the plasma processing ends, the subroutine 204 returns to the " main menu-like " startup routine 203 of FIG. 15 via step 226. FIG. Another alternative utilized through the startup subroutine 204 of FIG. 16 is to evaluate the current plasma processing performed in the processing chamber 36 against the spectral data already recorded in the normal spectral subdirectory 288. In the example shown in FIG. 16, this is accomplished by escaping step 208 of the startup subroutine 204 under a “NO” logic condition, which directs the startup subroutine 204 to step 212. . Step 212 asks if the plasma processing performed in the processing chamber 36 should be evaluated for spectral data in the normal spectral subdirectory. The two main choices that can be utilized under the starting subroutine 204 are the recording data or the evaluation spectral data of the current plasma processing for the spectral data already recorded in the normal spectral subdirectory 288, and also the abnormal spectral subdirectory. "No" in step 212 because the "determination" not writing data to 288 is made in step 208 of the subroutine 204 so that the subroutine 204 reaches step 212. (no) "only redirects the starting subroutine 204 to restart from the beginning. However, responding "yes" at step 212 instructs the startup subroutine 204 to proceed from step 212 to step 216. Step 216 asks if the plasma is from the processing chamber 36 and so may be the same as step 224 discussed above. Once the plasma is present in the processing chamber 36, the startup subroutine 204 proceeds to step 220, where the control of plasma monitoring operations is such that the state of the plasma processing can be processed. Is passed to. "Write" or "compare" selections may be provided in other ways than those set in the startup subroutine 203.

Plasma Condition Assessment

The plasma state module 252 of FIG. 7 is also included in the embodiment of FIG. 32 to evaluate the overall state or “plasma state” of the plasma in the chamber 36 in question. As used herein, "plasma state" refers to the plasma performance as compared to the typical "normal" plasma behavior that results in a useful product and refers to the state or condition of plasma processing. The "condition" of the plasma can be characterized as the cumulative result of all parameters having an effect on the plasma in the processing chamber. In other words, the "plasma state" may be identified with the condition that the current plasma process proceeds according to one or more plasma processes stored in the abnormal spectral subdirectory 288. In this regard, the plasma state module 252 is an optical system from the processing chamber 36 during plasma processing in which the current plasma processing performed in the processing chamber 36 has an associated spectrum or a portion thereof in the normal spectrum subdirectory 288. A comparison of at least one part of the emission can be used to determine if it is "normally" advanced. The spectral patterns of plasma in chamber 36 will change as plasma processing advances. In addition, the spectral patterns of the plasma in chamber 36 differ with respect to the category of plasma processing performed. This is evidenced by a review of the exemplary spectra from the plasma recipe, the plasma clean performed after the wet clean of the chamber 36, and the controlled wafer operation provided below. In each case, "intensity" is graphed along the "y" axis and represented as "counts" reflecting the intensity level, while "wavelength" is graphed in nanometers along the "x" axis.

Exemplary Plasma Recipe Spectrum-Figures 17A-C

An example of a multi-step plasma recipe performed on wafer 18 in chamber 36 is shown in FIGS. 17A-C in which the spectrum of plasma in processing chamber 36 depends on the change in the current plasma stage. 17A-C show a spectrum 744 of an exemplary first plasma step of exemplary plasma recipe A, a spectrum 752 of an exemplary second plasma step of this same plasma recipe A, and an example of this same plasma recipe A, respectively. A spectrum 760 of the third plasma stage is provided. Each of these spectra 744, 752, and 760 is characterized by many peaks 748, 756, 764 of varying intensities at various wavelengths. Comparison of the spectra 744, 752 and 760 reveals that their related patterns are different from one another including, but not limited to, the following: 1) Peak of spectrum 744 in FIG. 17A in the wavelength region of about 425 nanometers. 748a has an intensity of about 3,300, peak 756a of spectrum 752 of FIG. 17B has an intensity of about 3,000, and peak 764a of spectrum 760 of FIG. 17C has an intensity of about 2,100. ; 2) In the wavelength region of about 475 nanometers, the peak 748b of the spectrum 744 of FIG. 17A has an intensity of about 3,200, and the peak 756b of the spectrum 752 of FIG. 17B has an intensity of about 3,900, There is no peak in spectrum 760 in FIG. 17C, but the corresponding intensity (noise) is about 500; 3) In the wavelength region of about 525 nanometers, the peak 748c of the spectrum 744 of FIG. 17A has an intensity above 4,000, and the peak 756c of the spectrum 752 of FIG. 17B has an intensity of about 3,400. , Peak 764c of spectrum 760 of FIG. 17C has an intensity of about 2,750; 4) In the wavelength region of about 587 nanometers, there is no peak in the spectrum 744 of FIG. 17A, but its intensity is about 500 (noise), and there is no peak in the spectrum 752 of FIG. 17B, but its intensity is about 490 ( Noise), and the peak 764d of the spectrum 760 of FIG. 17C has an intensity of about 3,000; These differences between the spectra 744, 752 and 760 not only assess the evolution of the plasma recipe through evaluation of the spectral pattern of the plasma in the chamber 36 during the plasma recipe, but also distinguish between the various steps of the plasma recipe. Shows that it is possible.

Exemplary Plasma Clean Operating Spectrum Without Pre-Wet Clean-FIGS. 18A-C

Representative spectra are provided in FIGS. 18A-C illustrating how optical emission of plasma within processing chamber 36 changes over time during plasma cleaning performed without initially performing a wet cleaning of the chamber. 18A provides a spectrum 770 of an exemplary plasma when a processing chamber is in a dirty chamber condition while the plasma is provided to the processing chamber without any product in it. 18B provides a spectrum 774 of this same exemplary plasma at the intermediate time of the plasma cleaning where the dirty chamber conditions are initiated and processed by the plasma cleaning. Finally, Figure 18C shows that at the end of plasma cleaning at a time when the interior of the processing chamber 36 is considered to be in a condition that returns to commercial production (eg, etching integrated circuit designs on the production wafer 18). It provides a spectrum 778 of this same example plasma. This spectrum 778 may be selected by the operator of the facility implementing the wafer production system 2 as pointing to the chamber 36 in suitable conditions for recovery of production. However, it should be understood that "bright lines" are not essential when the chamber 474 is in a condition to return to production. Therefore, the choice of spectrum 778 as indicative of "clean chamber conditions" can be somewhat arbitrary.

Each of the spectra 770, 774, and 778 is characterized by many peaks 772, 776, and 780 of varying intensities at various wavelengths. The comparison of the spectra 770, 774 and 778 reveals that their patterns are actually different from one another, including but not limited to: 1) peaks in spectrum 770 of FIG. 18A in the wavelength region of about 625 nanometers. 772e has an intensity of about 500, the peak 776e of the spectrum 774 of FIG. 18B has an intensity of about 300, and there is no substantial peak in the spectrum 778 of FIG. 18C; 2) in the wavelength region of about 675 nanometers, the peak 772f of the spectrum 770 of FIG. 18A has an intensity of about 4,000, and the peak 776f of the spectrum 774 of FIG. 18B has an intensity of about 1,000, There is no peak in spectrum 778 of FIG. 18C; 3) In the wavelength region of about 685 nanometers, the peak 772g of the spectrum 770 of FIG. 18A has an intensity greater than 3,400, and the peak 7768g of the spectrum 774 of FIG. 18B has an intensity of about 2,200. , Peak 780g of spectrum 778 of FIG. 18C has an intensity of about 700; These differences between the spectra 770, 774 and 778 show that the progress of the plasma clean is demonstrated in the spectral pattern of the plasma in the chamber 36 during the plasma clean.

One or more entries of plasma cleaning may be requested in normal spectrum subdirectory 288 depending on various factors. For example, the spectral data of plasma cleaning performed after chamber 36 performs the first type of plasma recipe may be followed by chamber 36 performing the second type of plasma recipe different from the first type of plasma recipe. It may look different from the plasma cleaning performed.

Exemplary Plasma Cleaning Operation Spectrum Performed After Wet Cleaning-FIGS. 19A-C

A representative spectrum of one plasma cleaning operation of chamber 36 after wet cleaning is shown in FIGS. 19A-C. FIG. 19A provides a spectrum 1328 of an exemplary plasma in a processing chamber at the beginning of such plasma cleaning of chamber 36 while FIG. 19B shows a spectrum of an exemplary plasma at an intermediate point in such plasma cleaning of chamber 36. 1336, while FIG. 19C, on the other hand, provides a spectrum 1344 of exemplary plasma at the end of such plasma cleaning of the chamber 36. Each of the spectra 1328, 1336, and 1344 is characterized by many peaks 1332, 1340, and 1348 of varying intensities at various wavelengths. Comparison of the spectra 1328, 1336 and 1344 reveals that their respective patterns are different from one another, including but not limited to: 1) peaks in the spectrum 1328 of Figure 19A in the wavelength region of about 625 nanometers; 1332e has an intensity of about 600, peak 1340e of spectrum 1336 of FIG. 19B has an intensity of about 500, and peak 1348e of spectrum 1344 of FIG. 19C has an intensity of about 450 ; 2) In the wavelength region of about 668 nanometers, the peak 1332f of the spectrum 1328 of FIG. 19A has an intensity greater than 4,000, and the peak 1340f of the spectrum 1336 of FIG. 19B has an intensity of about 1,000. , Peak 1348f of spectrum 1344 of FIG. 19C has an intensity of about 400; 3) In the wavelength region of about 685 nanometers, the peak 1332g of the spectrum 1328 of FIG. 19A has an intensity greater than 3,400, and the peak 1340g of the spectrum 1336 of FIG. 19B has an intensity of about 2,300. , Peak 1348g of spectrum 1344 of FIG. 19C has an intensity of about 1,400; These differences between the spectra 1328, 1336 and 1344 show that the progress of the plasma cleaning operation is demonstrated in the spectral pattern of the plasma in the chamber 36 during the plasma cleaning.

One or more entries of plasma cleaning may be requested in normal spectrum subdirectory 288 depending on various factors. For example, the spectral data of the plasma cleaning performed on the chamber 36 after the wet cleaning may look different from the plasma cleaning performed on the new chamber 36 that was not wet cleaning. In addition, the spectral data of the plasma recipe performed after chamber 36 performs the first type of plasma recipe is performed after chamber 36 performs the second type of plasma recipe that is different from the first type of plasma recipe. It may look different from the plasma recipe.

Exemplary Controlled Wafer Operating Spectrum— FIGS. 20A-C

Representative spectra of conditioned wafer operation are shown in FIGS. 20A-C. 20A provides a spectrum 1288 of exemplary plasma in the processing chamber 36 at the beginning of a controlled wafer operation, and FIG. 20B provides a spectrum 1292 of exemplary plasma at an intermediate point in a controlled wafer operation. 20c provides a spectrum 1296 of an exemplary plasma at the end of the conditioning wafer operation. Each of the spectra 1288, 1292, and 1296 is characterized by many peaks 1290, 1294, and 1298 of varying intensities at various wavelengths. A comparison of the spectra 1288, 1292 and 1296 reveals that their respective patterns are different from one another, including but not limited to: 1) peaks in the spectrum 1288 of FIG. 20A in the wavelength region of about 440 nanometers. 1290a has an intensity of about 3,550, a peak 1294a of spectrum 1292 of FIG. 20B has an intensity of about 3,750, and a peak 1298a of spectrum 1296 of FIG. 20C has an intensity of about 4,000. ; 2) In the wavelength region of about 525 nanometers, the peak 1290b of spectrum 1288 of FIG. 20A has an intensity of about 2,800, and the peak 1294b of spectrum 1292 of FIG. 20B has an intensity of about 2,900, Peak 1298b of spectrum 1296 of FIG. 20C has an intensity of about 2,800; 3) In the wavelength region of about 595 nanometers, the peak 1290d of spectrum 1288 of FIG. 20A has an intensity greater than 2,100, and the peak 1294d of spectrum 1292 of FIG. 20B has an intensity of about 2,150. Peak 1298d of spectrum 1296 of FIG. 20C has an intensity of about 2,125; 4) In the wavelength region of about 675 nanometers, the peak 1290e of spectrum 1288 of FIG. 20a has an intensity greater than 600, and the peak 1294e of spectrum 1292 of FIG. 20b has an intensity of about 250 There is no peak in spectrum 1296 of FIG. 20C; 5) In the wavelength region of about 685 nanometers, the peak 1290f of spectrum 1288 of FIG. 20A has an intensity greater than 1450, and the peak 1294f of spectrum 1292 of FIG. 20B has an intensity of about 600. There is no peak in spectrum 1296 of FIG. 20C; These differences between the spectra 1288, 1292 and 1296 show that the progress of the conditioning wafer operation is demonstrated in the spectral pattern of the plasma in the chamber 36 during that operation.

One or more entries of the conditioning wafer operation may be requested in the normal spectral subdirectory 288 depending on various factors. For example, the spectral data of the conditioning wafer operation performed after the chamber 36 is only plasma cleaned may be plasma cleaned, wet cleaned, and then again plasma cleaned of the conditioning wafer operation performed in the chamber 36. It may look different from the spectral data. In addition, spectral data of the conditioning wafer operation performed after chamber 36 performs the first type of plasma recipe is performed after chamber 36 performs the second type of plasma recipe that is different from the first type of plasma recipe. It may look different from the adjustment wafer behavior being.

Plasma Status Module 252-Figures 21-25

The current plasma processing module 250 of FIGS. 7 and 32 initially processes through comparison of at least one portion of the spectral data of the plasma processing with at least one portion of the spectral data stored in the normal spectral subdirectory 288 (FIG. 9). It may be useful to monitor the state of any plasma treatment performed in chamber 36. Plasma cleansing (whether performed on production wafer 18 or quality wafer 18), as well as any other plasma processing conditions, plasma cleansing (with or without wet cleansing) and conditioning wafer operation Each can be evaluated via the plasma state module 252. Of the different categories stored in the normal spectral subdirectory 288 as well as in the abnormal spectral subdirectory 296 and the unknown spectral subdirectory 296, which are also used in the plasma state assessment of the current plasma processing performed in the chamber 36. How the plasma state module 252 handles the presence of plasma processes is actually a matter of preference. Some ways of handling the presence of multiple categories of plasma processes may affect the rate of evaluation by the plasma state module 252 than others. For example, the plasma state module 252 may limit the comparison of current plasma processes to the same category or type of plasma processes stored in the normal spectrum directory 288 and the abnormal spectrum directory 292. The appropriate "confirmation information " is the plasma processing gen field 322h (FIG. 12A) associated with each plasma process stored in the normal spectral subdirectory 288 and each plasma process stored in the abnormal spectral subdirectory 292 (or its Portion) may be input to the plasma processing gen field 333e. In addition, the current plasma processing performed in the chamber 26 can be identified with the plasma state module 252 in some manner. This can be accomplished through the startup module 202 of FIG. 15 (eg, a startup subroutine that can be passed to step 236 of subroutine 203 and then to plasma state module 252 ( By including appropriate process category or type identification information in steps 230, 234, 238, and 242 of step 203. Normal spectral subdirectory 288 and abnormal spectral subdirectory 292 compared to current plasma processing. Reducing the number of entries in may increase and typically increase the speed of evaluation of the state of the current plasma process by the plasma state module 252. However, data that is useful for comparison with the current plasma process. Is selected from the normal spectral subdirectory 288 and / or the abnormal spectral subdirectory 292 to determine the plasma treatment category or type match criteria. It may be advantageous to not exceed the plasma state. The plasma state is also preferably in the chamber 36 and the plasma spectral directory 284 over at least those wavelengths within the desired optical bandwidth based on the desired data resolution of the optical emission from the current plasma treatment. And in some cases any subset of the optical emission data of the plasma in the chamber 36 may be used to monitor the plasma state. When the processing speed is issued or potentially issued, there are many ways to determine the amount of optical emission data to monitor the state of plasma processing: The data in the abnormal spectral subdirectory 292 of Figure 9 shows the plasma state. Can be reviewed for monitoring purposes Plasma state assessment, for example, over optical emission segments that include those wavelengths that indicate errors occurring in processes previously performed within chamber 36. One alternative is to define an optical axis segment ± 25 nanometers on each side of each wavelength of the spectrum in an abnormal spectral subdirectory 292 indicating errors from previous plasma processing. For example, if errors from previous performances are reflected at 325, 425 and 575 wavelengths, the plasma state can be evaluated by observing each of the 300-350, 400-450 and 550-600 nanometer regions. Smaller optical emission segments for monitoring the plasma state can also be selected by defining a range that includes each of those wavelengths indicating errors from the abnormal spectral subdirectory 292. For example, if errors from previous performances are reflected at 325, 425 and 575 wavelengths, the plasma state can be evaluated by observing a wavelength region of about 325 nanometers to about 575 nanometers. It would also be desirable to include a "buffer" on each of the endpoints in this range (eg, extending about 25 nanometers on each end of the range). The above may be limited by limiting the plasma state assessment for those optical emission segments that only contain errors from the same type of plasma treatment (eg, the same plasma recipe) performed in chamber 36. Finally, information about the endpoint of the plasma treatment or individual portions thereof can be used to define the wavelengths that are evaluated in relation to the plasma state. As discussed in more detail below with respect to endpoint detection module 1200 and FIG. 52, an endpoint may be called based on a change in one or more specific wavelengths. Plasma state can be assessed by observing the ± 25 nanometer region near each wavelength used to call the endpoint. Notwithstanding the above, the plasma state should be assessed over at least 50 nanometer wavelengths, at which data is collected at the desired data resolution and again taken with the preferred optical bandwidth.

Plasma State Subroutine 253-Figure 21

One embodiment of a subroutine may be used to evaluate whether a plasma process proceeds according to at least one plasma process stored in the normal spectral subdirectory 288 of FIG. 9 (eg, pointing to a "state" plasma). 21 is shown which may be used by status module 252. In summary, the spectral data is taken during the whole of the execution of the current plasma process performed in the processing chamber 36 and more preferably throughout. The first part of the rather unstable plasma treatment should be considered. The spectral data of the current plasma process is first compared against the normal spectral subdirectory 288 to determine which plasma process the current plasma process is " matched " stored in the normal spectral subdirectory 288. As long as the current plasma process is "matched" with at least one plasma process stored in the normal spectral subdirectory 288, the current plasma process is characterized as being "normal" or "state" and the plasma state subroutine 253 displays the spectrum. It will continue to limit its investigation to "match" to the normal spectral subdirectory 288. However, there are often errors or abnormalities during plasma processing that may have some type of adverse effect on the desired end result of the plasma processing, which should be identified from the spectrum of the plasma in the chamber 36.

During the error or anomalies in the plasma treatment currently being performed, the spectrum of the plasma in chamber 36 should no longer be "matched" with any plasma treatment stored in normal spectral subdirectory 288. The plasma state subroutine 253 will then stop examining the normal spectral subdirectory to evaluate the current plasma process and begin comparing the current plasma process with the abnormal spectral subdirectory 292 of FIG. Errors or anomalies in plasma treatments previously encountered by plasma state subroutine 253 on this same chamber 36 and having their corresponding cause or causes identified are abnormal spectral subdirectory 292. Is written on. If the spectral data of the current plasma process is " matched " with at least one spectrum in the abnormal spectral subdirectory 292, the actions that can be initiated are suitable as discussed above in connection with the process alert subroutine 432 of FIG. From issuing an alert to processing one or more process control features of the wafer production system 2.

All data in the normal spectral subdirectory 288 and the abnormal spectral subdirectory 292 are the processes used to evaluate any plasma treatment in which the plasma state module 252 is currently performed or performed in the same chamber 36. From the chamber 36. Creating a library of information for the normal spectral subdirectory 288 and the abnormal subdirectory 292 takes time for the plasma state subroutine 253 to “learn” from the chamber 36 and the plasma processes performed therein. Takes Therefore, situations will arise where the spectral data of the plasma from the current plasma process cannot be found in the normal spectral subdirectory 288 or the abnormal spectral subdirectory 296 by the plasma state subroutine 253. This type of information is stored for subroutine 253 in unknown spectral subdirectory 296 of FIG. It will remain a "unknown condition" until the spectral data can be adequately analyzed and "cause" can be identified, at which time the relevant spectral data is the plasma state sub of the processing chamber 36 and its associated plasma processes. It may be passed to the normal spectral subdirectory 288 or the abnormal spectral subdirectory 292 to update the knowledge of the routine 253.

The properties of the plasma state subroutine 253 will be processed if the plasma processing is a plasma recipe performed on the wafer 18 in the chamber 36. An exemplary general procedure for carrying out a plasma recipe on wafer 18 is as follows. First, a cassette 6, possibly having one or more quality wafers as well as a plurality of production wafers 18 therein, is transferred to one of the load lock chambers 28 (FIG. 1). The wafer processing assembly 44 will retrieve one of the wafers 18 from the cassette 6 and transport it to the processing chamber 36. At this time, the plasma in the chamber 36 is off. Chamber 36 is sealed and plasma is burned to perform plasma processing on wafer 18. A typical practice is to carry out the same plasma treatment on the entire cassette 6. After completion of the plasma processing on the first wafer 18, the plasma is turned off, the chamber 36 is opened, and the wafer processing assembly 44 retrieves the wafer 18 from the chamber 36 and transfers it to the cassette 6. Return it to its corresponding slot. Once all the wafers 18 of the cassette 6 have been processed in this manner (typically 1-3 quality wafers are used for the cassette 6 with the wafer 18 and can be included anywhere within the cassette 6). The cassette 6 can be removed from the load lock chamber 28 and replaced with another cassette 6 of the wafer 18. The quality wafer 18 from the plasma treated cassette 6 can then be tested (destructively or non-destructively), while semiconductor devices can be formed from the production wafer 18.

Whether performed on a quality or production wafer, plasma processes in the processing chamber 36 are evaluated by the plasma state module 252. A time course of typically one minute or less exists between the time that one production wafer 18 is removed from the processing chamber 36 and the time that plasma processing begins on the next production wafer 18 loaded into the chamber 36. do. Plasma state module 252 is because plasma state module 252 effectively relies on pure pattern recognition techniques and does not rely on chemical analysis or chemical species identification techniques, before the plasma recipe begins on the next production wafer 18. Evaluation of the plasma recipe performed on the production wafer 18 can be completed. In addition and as discussed in more detail below, the plasma state module 252 can determine the confirmation of plasma processing as well as the plasma processing being performed on a quality wafer 18 versus a production wafer 18. You can judge that.

Data relating to the current plasma treatment performed on the product in the processing chamber 36 at the current time t _c is obtained for evaluation by the plasma state subroutine 253 of FIG. 21 through the execution of step 254. Although step 254 is referred to in FIG. 21 only in relation to "spectrum" or optical emission data, as mentioned above, other types of data are also available at this time (the plasma from which the relevant spectrum was obtained from chamber 36). In time with recipe). Next, between step 258 of the plasma state subroutine 253, between the spectrum of the current plasma treatment obtained in step 254 (current plasma treatment) and the associated spectrum from the normal spectral subdirectory 288 (stored plasma treatment) Comparison is made. In order to facilitate an initial understanding of how the state of the plasma process can be assessed by the process state module 252, the normal spectral directory 288 is hereinafter referred to only as a single plasma process ("method a") stored therein. Will be described as having. The plasma state / process recognition presented below with respect to FIGS. 22-24 shows how the current state of the plasma process can be handled by the plasma state module 252 in the situation where multiple plasma processes are stored in the normal spectral subdirectory 288. Addressed in the discussion of subroutines 790, 852, and 924.

Step 258 of the plasma state subroutine 253 is shown to take a comparative analysis between the spectrum of the plasma in the chamber 36 at the current time t _c and the relevant spectrum of recipe A from the normal spectral subdirectory 288. 13 calls the pattern recognition module 370. This is affected by step 258 of subroutine 253 which sets the target directory used by normal pattern subdirectory 288 by pattern recognition module 370. Only the normal spectral subdirectory 288 then has a plasma state subroutine 253 to determine if there is a "match" between the current spectrum at the current time t _c and recipe A as stored in the normal spectral subdirectory 288. Is performed by the pattern recognition module 370 at this time. Which spectrum of recipe A is actually compared to the current spectrum in this example will be discussed below after the discussion of loop 190 of subroutine 253 is completed.

The pattern recognition module 370 of FIG. 13 shows that the pattern recognition module 370 in this example has a spectrum and normal spectrum subdirectory 288 at the current time t _c (from step 254 of the plasma state subroutine 253). After determining whether there is a "match" between the relevant spectra of recipe A from the control, the control of the plasma monitoring operation is returned to the plasma state subroutine 253 of FIG. The result of the analysis by the pattern recognition module 370 (“match” or “unmatched”) is actually provided in step 260 of the plasma state subroutine 253 of FIG. 21. If the current spectrum at the current time t _c is "matched" with the relevant spectrum of recipe A, the evaluation by the plasma state subroutine 253 will continue with respect to the normal subdirectory 288. In this regard, the plasma state subroutine 253 may be entered in the chamber 36 to be evaluated by the subroutine 253 to determine whether the current plasma process performed in the processing chamber 36 in step 261 has ended. Inquire about whether there are any more spectra from the current plasma treatment being performed. Other information about that current plasma process may be discussed in more detail below (eg, to access the chamber condition evaluation function, to access the endpoint determination function), as discussed in more detail below. It may be provided through the execution of step 194 of the plasma state subroutine 253 to call modules.

Additional optical emission data on the current plasma process for evaluation by the plasma state subroutine 253 may be utilized through the execution of step 278. At step 278, the "clock" of subroutine 253 is effectively reset. Step 278 of subroutine 253 more specifically provides adjustment of "clock" by correction increment "n" to increase the current time t _c by increment of "n". The size of "n" defines that portion of the collected data to be analyzed. All data or just portions thereof may be analyzed (eg, all other “pieces” of optical emission data may actually be analyzed). In the following, this concept will be referred to as analytical time resolution. In one embodiment, the analytical time resolution in relation to the plasma state is at least every 1 second, more preferably at least every 300 milliseconds. The plasma state subroutine is then obtained 254 for the subroutine 253 at the new current time t _c so that the next spectrum of plasma in the processing chamber 36 from the current execution of the plasma treatment can be evaluated according to the above. Return).

Define what is the "related spectrum" of the plasma processing stored in the normal spectral subdirectory 288 for comparison with the current spectrum of the plasma in the chamber 36 at the current time t _c via the plasma state subroutine 253. There are many ways to do this. The relevance may be time dependent and will be referred to below as the "time dependency requirement". In that example where the plasma treatment stored in the normal spectral subdirectory 288 is recipe A, the relevant spectrum of recipe A compared to the spectrum of plasma in chamber 36 at the current time t _c is equal to this current if time dependent requirements are used. It will be limited to that spectrum for recipe A associated with time t _c . That is, the spectrum of the plasma at time t ₁ the chamber 36 during the current plasma process in the comparison with the spectrum of the recipe A is associated with the same time t ₁ through the execution of step 258 of the plasma state subroutine 253 will be the spectrum of a plasma in the chamber 36, the current during the plasma process at time t ₂ is to be compared with the spectrum of the recipe a is related to the same time t ₂ through the execution of step 258 of the subroutine 253 And so on. This time dependent requirement for determining what the "related spectrum" may be used regardless of which subdirectory of the plasma spectrum directory 284 is "investigated" by the pattern recognition module 370.

Theoretically, the time dependent requirement is one acceptable way to evaluate whether the current plasma process proceeds according to any one or more plasma processes stored in the normal spectral subdirectory 288. From a practical point of view this is not necessary. Variables across the wafer 18 in a given wafer cassette 6 where the same plasma recipe is typically performed affect the amount of time required to complete one or more plasma steps of the current plasma recipe performed in chamber 36. Can cause. For example, the thickness of any layer etched away by any step of the plasma recipe may vary for the wafer 18 within acceptable tolerances. Conditions within chamber 36 may also have an effect on the amount of time required to reach the end point of one or more plasma steps of a given plasma recipe or any other plasma process for that problem. For example, the performance of chamber 36 may vary because the interior of chamber 36 is aged by the formation of deposits therein, by etch removal of materials from the interior, or both. . Changing the performance of the chamber 36 may change the amount of time required to reach the end point of one or more steps of a given plasma recipe. Failure to describe these types of elements is that the plasma state subroutine matches false alarms, or more specifically, at least one plasma process stored in the normal spectrum subdirectory 288 if it is not. Will issue an instruction not to.

Alternatives to the time dependent requirements are what is the "related spectrum" of a given plasma process stored in the normal spectral subdirectory 288 for comparison with the spectrum of the plasma in chamber 36 at the current time tc from the current plasma process. Exists to judge. In the context of the plasma state subroutine 253 and indeed the "relevance" for each submodule of the current plasma processing module 250, although not necessarily at the same speed and so not time dependent, it is simply performed in the chamber 36. The current plasma processing may be performed in a manner that matches at least one plasma processing stored in the normal spectral subdirectory 288. In the following this will be referred to as the "progression depedency requirement" and will be illustrated next. The first spectrum obtained for the plasma state subroutine 253 at the current time t ₁ is compared to one or more spectra of recipe A in the normal spectral subdirectory 288 in this example. The spectrum of recipe A that matches the spectrum of the plasma in chamber 36 at the current time t ₁ and has the earliest time associated with it is identified as the current state spectrum of recipe A. Although this is unlikely to happen, it describes a possible situation where the spectrum at time t ₁ in a given plasma treatment is actually the same as the spectrum at time t ₁₀₀₀ in this same plasma treatment. The next spectrum obtained for the plasma state subroutine 253, or in this example the spectrum at time t ₂ , is first compared to this same current state spectrum of recipe A in the normal spectrum subdirectory 288. If the current spectrum at current time t ₂ still matches this current state spectrum of recipe A, the current state spectrum of recipe A remains unchanged. However, if the spectrum of the plasma in chamber 36 from the current plasma recipe performed on the product in chamber 36 at the current time t ₂ does not match the current state spectrum of recipe A, then the pattern recognition module 370 will determine this current. Check to see if the spectrum matches the spectrum of Recipe A that follows (in time) the current state spectrum in Recipe A. "Match" between the current spectrum of the plasma in the processing chamber 36 and the spectrum of Recipe A following the current state spectrum at the current time t _c means that the current plasma processing is appropriately advanced and the time "in recipe A This latter in "matching spectrum" is now the current state spectrum of recipe A. The logic above will continue to repeat as long as the current plasma process proceeds according to recipe A of normal spectral subdirectory 288. This progress dependence requirement may be used regardless of whether the subdirectory of the plasma spectral directory 284 is examined by the pattern recognition module 370. In addition, the logic is first checked for the next spectrum (in time) that the current spectrum follows (in time), and then again checked for the current state spectrum only in the condition that there is no match for the purpose of determining if processing is to proceed. (For example, assuming progression at the same speed and re-observing only when necessary).

The loop 190 defined by the steps 254, 258, 260, 261, 278 of the plasma state subroutine 253 will continue to be redone until one of two events occurs. When all the spectral data of the current plasma process is evaluated by the subroutine 253 as described above, one event occurs that exits the plasma state subroutine 253. That is, the entire current plasma process may include at least one of the plasma processes recorded in the normal spectral subdirectory 288 (at least one of the predetermined plasma processes that may be included in the normal spectral subdirectory 288). In the processing chamber 36 to be processed or as an example (A) of the processing method. Control of the plasma monitoring operation is then transferred from the plasma state subroutine 253 back to, for example, the execution of step 279 of the startup module 202 to plasma state subroutine 253 of FIG. It should be noted that the results of a "normal" run may be recorded in a "normal run" log file. Data such as that shown in FIG. 12A can be included in this "normal execution" log file and will provide a historical record of the corresponding plasma processing. If data storage space is an issue, spectral data may be omitted from the time-system record, although it is desirable to maintain such data. In addition, this temporal systemic data does not currently need to be stored for access by the plasma processing module 250. For example, temporal data can be stored in a network or other predetermined data storage area associated with a wafer production system.

When this current plasma spectrum is no longer "matched" with any plasma processing stored in the normal spectral subdirectory 288, the plasma state subroutine 253 is also loop 190 (the normal spectral subdirectory of FIG. 9). 288) evaluation of the current spectrum at the current time t _c ). This is the case when the current plasma recipe executed in production in the processing chamber 36 at some point in time does not "match" the processing method A of the normal spectral subdirectory 288 in the example of the processing method. Can be. In this case the result of the pattern recognition module 370 of FIG. 13, which is provided back to step 260 of the plasma state subroutine 253, causes the subroutine 253 to proceed from step 260 to step 266. .

Step 266 of the plasma state subroutine 253 is performed by the pattern recognition module 370 of FIG.

Allows a comparative analysis between the spectrum of the plasma in chamber 36 and the relevant spectrum of abnormal spectral subdirectory 292 at the current time t _c . This is performed by step 266 of the subroutine 253 which sets the target directory used in the pattern recognition module 370 to the abnormal spectrum subdirectory 292. Then only through the execution of step 266 to determine whether there is a "match" between the current spectrum of the plasma in chamber 36 and the relevant spectrum stored in abnormal spectrum subdirectory 292 at the current time t _c . The abnormal spectrum subdirectory 292 is searched by the pattern recognition module 370.

Which spectrum of the abnormal spectral subdirectory 292 of FIG. 9 is actually analyzed with the current spectrum of the plasma in the chamber 36 at the current time t _c using the above-described analysis provided by the pattern recognition module 370. There are a number of options involved. Each spectrum stored in an abnormal spectral subdirectory 292 may have a time associated with it and preferably has a time, which time (i.e., its corresponding time) belongs to the plasma process at which the spectrum is obtained in chamber 36. t _c ). Pattern recognition search of the abnormal spectrum subdirectory 292 for "matching" of the module 370 in the same time t _c in or the current time t _c of time of a predetermined amount on each side of (i.e., the time t _c It can be limited to the spectrum recorded within ± "x" seconds). For example, if the current spectrum yields 20 seconds for plasma processing executed in the processing chamber 36, the point-to-point analysis implemented by step 386 of the pattern recognition subroutine 374 of FIG. It may be performed in relation to only the spectrum in the abnormal spectral subdirectory 292, which is also recorded within a time period of seconds or within ± 10 seconds of this time period (or any other desired amount).

Other subsets of anomalous spectral subdirectories 292 that can be used as detailed search criteria may have a category / class of plasma treatment or even a plasma treatment type or several types / types of plasma treatment (e.g., a specific type of plasma recipe). Within the plasma treatment category / class. That is, only such spectra of the abnormal spectral subdirectory 292 associated with at least the same plasma processing as possible at present in production in the processing chamber 36 are transferred to the pattern recognition module 370 using the plasma processing criteria. Will be analyzed. The "likelihood" matching process does not narrow the scope of the identification of the current plasma process to a single plasma process in the normal spectral subdirectory 288 at the time an error in the current plasma process occurs. It is used in this situation. The method by which the plasma state module 252 identifies the current plasma process performed in production in the process chamber 36 is described below in connection with the plasma state / process recognition subroutines 790, 852, 924 of FIGS. 22-24. Are dealt with.

The plasma step of the plasma processing may be used as a fine search criterion for the abnormal spectral subdirectory 292 to be analyzed by the pattern recognition module 370. That is, only such spectra in the abnormal spectral subdirectory 292 related to one of the various stages of plasma processing that are still matched with the current plasma stages executed in the processing chamber 36 are still possible. 370). "Possibility" is because the plasma state module 252 does not narrow the scope of the current plasma step and processing to a single plasma step of a single plasma process in the normal spectral subdirectory 288 at the time an error occurs in the current plasma processing. In this context, it is used in connection with the matching of the plasma steps of the plasma processes. The method by which the plasma state module 252 identifies the current plasma stage of the current plasma process being executed in the processing chamber 36 may include the plasma state / process stage recognition subroutine 972 described below in connection with FIG. It is done through

Any combination of the above, which can be used as an initial search criterion, initially refines the search for an abnormal spectral subroutine I292. Finally, no detailed search criteria are required to be used. That is, a search of an abnormal spectral subdirectory 292 for "matching" may compare the current spectrum of the current time t _c with each spectrum in the abnormal spectral subdirectory 292, thereby making time as an essential "initial initial" criterion. All of the plasma treatment type / plasma treatment categories within the element and the given plasma treatment category / plasma treatment step element are removed.

The pattern recognition module 370 determines the difference between the spectrum of the plasma in the chamber 36 and the relative spectrum from the abnormal spectral subdirectory 292 at the current time t _c (from step 254 of the plasma state subroutine 253). After determining whether "matching" exists, the pattern recognition module 370 returns control of the plasma monitoring operation to the plasma state subroutine 253 of FIG. The results of the analysis ("matching" or "non-matching") by the pattern recognition module 370 are provided to step 276 of the plasma state subroutine 253 of FIG. If the current spectrum of the plasma in the processing chamber at the current time t _c is " matched " with at least one spectrum in the abnormal spectral subdirectory 292, the plasma state subroutine 253 efficiently handles two operations, which operation Are performed in any order including concurrent. One such operation is to proceed to step 274 where the plasma state subroutine 253 invokes the process alert module 428 described above with respect to FIG. In general, an alert may be generated in connection with the identification of an abnormal condition in which control of the wafer production system 2 may be handled or through the process alert module 428. Another operation is handled by the plasma state subroutine 253 in the case of recording data for the reminder of the plasma processing in the "abnormal execution" log file for time systematic purposes.

At a minimum, the spectral data is not "matched" with any associated plasma processing stored in subdirectory 288 but is the first spectrum "matched" with at least one entry in abnormal spectral subdirectory 292) current time t _c Is recorded in the "abnormal execution" log file during execution of step 264. In the process from step 264 to step 265 of the plasma state subroutine 253 of Fig. 21, a determination is made regarding the state of the current plasma processing. More accurate recording of data for any termination of plasma processing or attention to processing causes subroutine 253 to proceed to step 267, where control of the plasma monitoring operation is performed, for example, in FIG. Is returned to the start up module 202. Subsequent plasma processing after the error has been identified causes subroutine 253 to proceed from step 265 to step 268 where the current time t _c is increased by the factor " n " A step 272 for recording in the “abnormal execution” log file can obtain another spectrum of plasma in the chamber 36 for the subroutine 253 at this new current time t _c . The magnitude of "n" may be the desired analytical time resolution. Steps 264, 265, 268, and 272 continue to store data in the "abnormal execution" log file until the current plasma processing ends, when the subroutine 253 exits step 267 as described above. Will be repeated in the manner described above.

At the current time t _c the current spectrum of the plasma in the processing chamber 36 is not "matched" with a given plasma process stored in the normal spectral subdirectory 288 and furthermore this current spectrum is in the abnormal spectral subdirectory 292. A situation can arise where no match is made with any stored relative spectrum. This is referred to herein as an "unknown condition." Plasma state subroutine 253 of FIG. 21 handles this situation by exiting step 276, in which subroutine 253 efficiently handles two operations, such operations being concurrent. It may be performed in a predetermined order including. One such operation is for the plasma state subroutine 253 to call 256 the process alert module 428 described above in connection with FIG. In general, an alert may be generated in connection with the presence of an unknown condition that may be handled by the control of the wafer production system 2 or through the process alert module 428. Another operation is processed by the plasma state subroutine 253 in the case of recording data for attention of plasma processing in unknown spectral subdirectory 296.

At a minimum, the spectral data is not "matched" with any associated plasma processing stored in the normal spectral subdirectory 288 but is the first spectrum "matched" with at least one entry in the abnormal spectral subdirectory 292). _It is written into unknown spectral subroutine 296 during execution of step 270 for _c . In proceeding from step 270 to step 283 of the plasma state subroutine 253, there is a determination as to whether or not the current plasma processing has ended (e.g., plasma "off" in chamber 36). Determination of whether to do so). The end of the plasma processing causes the subroutine 253 to proceed to step 281, where control of the plasma monitoring operation is returned to, for example, the start-up module 202 of FIG. Continued plasma processing after unknown conditions causes subroutine 253 to proceed from step 283 to step 280, where the current time t _c is a factor "n" (e.g. desired Chamber 36 for the subroutine 253 at this new current time t _c through step 282 for recording in the unknown spectral subdirectory 296 increased by Data Collection Time Resolution. Other spectra of the plasma in the) can be obtained. Steps 270, 283, 280, and 282 indicate that subroutine 253 exits step 281, as described above, until the current plasma process has ended or data for attention of the process is in subdirectory 296. Will be repeated in the manner described above until the

Plasma processing recorded in the unknown spectral subdirectory 296 is generally attempted in a continuous analysis to identify the cause of the unknown condition as described above. If the unknown condition turns out to be a practically new plasma process, the data recorded in the unknown spectral subdirectory 296 is sent to the normal spectral subdirectory 288. The new spectral pattern from this new plasma process makes it possible to access further processing plasma processes on this same processing chamber 36. If the unknown condition turns out to be an error with an associated cause, then any or all data from that execution recorded in unknown spectral subdirectory 296 is sent to abnormal spectral subdirectory 292. At least one new spectral pattern indicative of the newly identified error condition makes it possible to access plasma processing of further execution on this same processing chamber 36 via the plasma state module 252.

Plasma Status / Process Analysis Subroutine 790-Figure 22

Another embodiment subroutine that can be used by plasma state module 252 is shown in FIG. Not only is the state or condition of the plasma accessed by the subroutine 790 of FIG. That is, the subroutine 790 is used to distinguish the same plasma recipe that is operated on the production wafer 18 and the quality wafer 18 to identify plasma processing (eg, to distinguish different types of plasma recipes). Etc.). As a result, the subroutine 790 is characterized by the plasma state / process recognition subroutine 790. Plasma state / process recognition subroutine 790 also presents one method, in which the current plasma process performed in the chamber 36 is contrary to the multiple plasma process stored in the normal spectral subdirectory 288 of FIG. Is evaluated. This very same principle can be implemented in the plasma state subroutine 253 of FIG.

Many prerequisites are addressed before the plasma state / process recognition subroutine 790 actually initiates an analysis of the current plasma process being executed within the processing chamber 36. The order in which these steps are performed is not critical to the present invention. Initialization of the plasma state / process recognition subroutine 790 sets the target directory associated with the pattern recognition module 370 of FIG. 13 to the normal spectrum directory 288 of FIG. 9 at step 796 of the subroutine 790. Steps. In general, the pattern recognition module 370 can generate a pattern of "execution spectra" (ie, spectra for plasma from the process chamber 36 during plasma processing executed within the process chamber 36) in the normal spectral subdirectory 288. Are used to compare with the relevant spectra of the plasma treatment stored within.

Prerequisites for the analysis of current plasma processing performed in the chamber 36 by the plasma state / process recognition subroutine 790 also "call up" the first plasma processing in the normal spectral subdirectory 288. Or " flag " requires execution of step 816, where normal spectral subdirectory 288 is compared to the current plasma process by subroutine 790. The logic of subroutine 790 The current plasma processing executed in the processing chamber 36 is compared to only one plasma processing stored in the normal spectral subdirectory 288 at a time, that is, the subroutine 790 firstly processes the recipe in the normal spectral subdirectory 288. Compare the current plasma treatment with A. If the current plasma treatment deviates from recipe A, subroutine 790 replaces the entire corresponding current plasma treatment with the normal spectral subdivision. Compare to recipe B in tory 288. Only if the current plasma treatment deviates from recipe B, other plasma treatments stored in normal spectral subdirectory 288 are currently plasma processed by plasma state / process recognition subroutine 790. And one at a time, as in the case of the plasma state subroutine 253 described above with reference to Fig. 12, the plasma state / process recognition subroutine 790 may have all plasma processes stored in the normal spectral subdirectory 292. It is configured to be comparable to current plasma treatments or to use the detailed criteria / criteria described above.

The first spectrum of plasma in the processing chamber 36 obtained to the plasma state / process recognition subroutine 790 is present during the performance of step 794, which is also part of the initialization of the subroutine 790. This spectrum is related to time t ₀ and stored with each spectrum obtained to subroutine 790 until analysis is complete. Certain failures in maintaining the spectrum of current plasma processing do not allow subroutine 790 to use its "one processing at a time" comparison logic.

Assume that recipe A is the first plasma process stored in normal spectral subdirectory 292 to be compared to the current plasma process executed in chamber 36. The first step of the subroutine 790 to be repeated for each plasma process evaluated by the subroutine 790 is step 798, in which the current time t _c variable is derived, further This current time t _c is set equal to the start time t ₀ . Comparing the current plasma processing executed in the processing chamber 36 with the data from step 816 is performed in step 800, where step 800 is passed to the plasma state / process recognition subroutine 790. It is instructed to proceed to the pattern recognition module 370 of. Analysis of the spectrum for the plasma from the processing chamber 36 at the current time t _c determines step 800 to determine whether this current plasma is "matched" with the relevant spectrum of Recipe A in the normal spectral subdirectory 288. Is performed in As described above in connection with Fig. 13, the "matching determination" is a measure of whether the pattern of the current spectrum is sufficiently similar to the pattern of the relevant spectrum for recipe A from the normal spectral subdirectory 288 to be considered as "matching" therewith. To determine whether or not to compare the patterns of two known spectra efficiently. The “relevance” is shown in that the spectrum for a given plasma treatment from the normal spectral subdirectory 288 is compared by the subroutine 790 with the spectrum of the plasma in the chamber 36 at the current time t _c . 21 may be determined according to the time dependent or progress dependent requirements described above with respect to the plasma state subroutine 253.

The analysis results from step 800 are evaluated in step 812 of the plasma state / process recognition subroutine 790. If the spectrum of the plasma in the processing chamber 36 associated with the current plasma processing at the current time t _c is "matched" with the relevant spectrum of recipe A in the normal spectral subdirectory 288, then the subroutine 790 displays the results. Proceed to 802. For example, an indication that the plasma state / process recognition subroutine 790 has determined that the current plasma process executed in the process chamber corresponds to recipe A for the current time t _c (in FIG. 6) is shown in display 130 ) Or by any other method described above. Indicating that the plasma process currently being executed in process chamber 36 will eventually be Recipe A may be incorrect at this point in time and thus inadequate. In particular, it is limited to Recipe A to compare current plasma processing to normal spectral subdirectory 288 up to this point in time. The spectrum for the plasma in chamber 36 up to the current time t _c is also actually “matched” with the relevant spectrum of one or more other plasma processes stored in normal spectral subdirectory 288. However, this is because the logic used by the plasma state / process recognition subroutine 790 evaluates the current plasma process performed in the process chamber 36 for only a single plasma process in the normal spectral subdirectory 288 at a time. Therefore, it is not decided. Thus, at this point all of the above is that the current plasma treatment potentially results in recipe A.

The evaluation status of the current plasma process is checked in step 806 of the plasma state / process recognition subroutine 790. Execution of step 806 determines whether all data from the current plasma process is evaluated by subroutine 790 (ie, all data obtained until plasma is extinguished). Failure to examine any continued current plasma process or all of its own optical emission data causes the plasma state / process recognition subroutine 790 to proceed to step 804, which step 804. Causes the current time t _c to be adjusted by an increment of "n". The magnitude of "n" defines the analysis time resolution. For example, if the start time t ₀ is set to 1 second (here in step 794 the subroutine 790 obtains the initial spectrum read) and the variable “n” is set to 2 seconds, step 804 is exited. The current time t _c at exit is three seconds. At this new current time, the spectrum from the processing chamber 36 is obtained by the subroutine 790 in step 808, the subroutine 790 returns to step 800, and in step 800 the new spectrum The pattern of is compared with the pattern for the relevant spectrum of Recipe A to determine whether they "match" as described above.

Steps 800, 812, 802, 806, 804, and 808 are executed in the processing chamber and one of the plasma processes stored in the normal spectral subdirectory 288 (recipe A in the example) until one of two conditions appears. Define a loop 818 to be performed subsequently to compare the current plasma processing. One of these conditions is when the current plasma process ends and when the current plasma process "matches" the entire plasma process stored in the normal spectral subdirectory 288. In this case, the subroutine exits from step 806 to step 810. Control of the plasma monitoring operation is returned by step 810 to P, for example, the startup module 202 of FIG.

Another condition in which subroutine 790 exits loop 818 is the normal spectrum at which the spectrum for plasma in process chamber 36 is currently used by plasma state / process recognition subroutine 790 at current time t _c . It is when it is not "matched" with the relevant spectra for the plasma processing (recipe A in the example) stored in subdirectory 288. In this case, subroutine 790 exits from step 812 to step 814. Step 814 inquires basically whether each plasma process stored in the normal spectral subdirectory 288 has been compared with the current plasma process by subroutine 790 via loop 818. Plasma state / process recognition subroutine 790 if at least one plasma process stored in normal spectrum subdirectory 288 has not been used as a comparison criterion for the current plasma process after subroutine 790 exits loop 818. ) Proceeds from step 814 to step 822 where step 822 contains data for subsequent plasma processing stored in the normal spectral subdirectory 288 for use by the subroutine 790. Is recalled in such a way. This data for plasma processing stored in normal spectral subdirectory 288 continues from time t ₀ to the final current time t _c (ie, immediately from the beginning of such plasma processing). Is recalled to be evaluated by). That is, the subroutine 790 returns from step 789 to step 822, where the current time t _c returns to the start time t ₀ and the loop 818 of the subroutine 790 In the manner described above, the next plasma process stored in the normal spectral subdirectory 288 is started to evaluate the current plasma process.

It may be the case that the current plasma processing executed in chamber 36 does not "match" certain plasma processing stored in normal spectral subdirectory 288. In this case, the plasma state / process recognition subroutine 790 exits step 814 and proceeds to step 820. In general, the protocol of step 820 allows the plasma state / process recognition subroutine 79 to determine whether the current plasma recipe faces a known error / abnormal stored in the abnormal spectral subdirectory 292. Accordingly, the plasma state / process recognition subroutine 790 is anomalous spectral subdirectory 292 and unknown for the scheme (ie, starting at step 266 of subroutine 253 and everything after). And may include a portion of the plasma state subroutine 253 of FIG. 21 attached to the spectral subdirectory 296.

The spectrum of the current plasma process compared to the abnormal spectral subdirectory 292 in the manner described with respect to the plasma state subroutine 253 of FIG. 21 is matched to a given plasma process stored in the normal spectral subdirectory 288. This is followed by (on time) the spectrum of the final current time t _c . An example where t ₀ is 1 second and “n” is 2 seconds, current plasma treatment “matched” with recipe A up to time t ₃₉ , current plasma treatment “matched” with recipe B up to time t ₆₁ and only time t ₃ Assume current plasma treatment "matched" with treatment method C.

Spectrum from the current plasma process executed in the processing chamber 26, which proceeds for the longest time with any plasma process stored in the normal spectral subdirectory 288 before any abnormality is recognized, is time t from recipe B. _Becomes the spectrum at ₆₁ . The spectrum at time t ₆₃ thus becomes a spectrum compared to the abnormal spectral subdirectory 292 in the manner described above with respect to the plasma state subroutine 253 of FIG.

If the plasma treatment identified by the plasma state / process recognition subroutine 790 is a plasma recipe stored in the normal spectral subdirectory 2880, then the abnormality of the subroutine 790 will be implemented to increase the speed of plasma state assessment. . Recognizing that the current plasma processing executed in the chamber 36 becomes a plasma recipe (only one of the categories of plasma processing that can be evaluated by the plasma state / process recognition subroutine 790). The logic of the subroutine 790 is normal to that identified previously by the subroutine 790 for its subsequent analysis of each subsequent plasma process in which the subroutine 790 is subsequently executed at least within the chamber 36. Modified to start with the corresponding plasma recipe from spectral subdirectory 288. If "matching" the plasma treatment from the normal spectral subdirectory 288 occurs as the final evaluated by the subroutine 790 for the current plasma treatment, then the next plasma treatment that is performed in chamber 36 By having the first plasma treatment from the normal spectral subdirectory 288 compared to the < RTI ID = 0.0 >, a significant plasma state evaluation time is saved. This is because the same plasma recipe is generally performed for each production wafer 18 from a given cassette 6, so as to evaluate the plasma recipe / process to be executed on the cassette 6 of the production wafer 180. This is particularly useful when using the recognition subroutine 790. The ability of subroutine 790 to distinguish between the same plasma recipe executed on quality wafer 18 and the plasma recipe on production wafer 18 provides further variation along this same line. Assume that the first wafer 18 is substantially the production wafer 18 and that the plasma recipe has been identified for the production wafer 18 in the first run of this plasma recipe. Each wafer 18 processed in succession is first checked for plasma recipes executed on production wafers 18 from normal spectral subdirectory 288 and then quality wafers 18 from normal spectral subdirectory 2880. Plasma recipes performed on are examined.

Plasma Status / Process Recognition Subroutine 852-Figure 23

The plasma state / process recognition subroutine 790 of FIG. 22 has been described as implementing "serial" logic. That is, the comparison of the current spectrum for the plasma in the processing chamber 36 at the current time t _c is made in relation to only one plasma treatment stored in the normal spectral subdirectory 288 at a time. The plasma state / process recognition subroutine used by process state module 252 and proceeding to "parallel" logic is shown in FIG. The plasma state / process recognition subroutine 852 of FIG. 23 begins (ie, “matches” the spectrum) at step 854 where the target directory for the pattern recognition module 370 of FIG. 13 is set to the normal spectrum subdirectory 288. Search begins in the normal spectral subdirectory 288). Another preliminary step of the plasma state / process recognition subroutine 852 is to use "T" for each plasma process stored in the normal spectral subdirectory 288 in which the logical operator Flag ₂ is to be evaluated via the subroutine 852. Step 856 is set. The order in which steps 854 and 856 are performed is not particularly important in the context of the present invention.

In step 860 the plasma state / process recognition subroutine 852 obtains data relating to the current plasma process executed in production in the process chamber 36. Such data may be included in the plasma chamber 36 while performing plasma processing in the processing chamber 36 at the current time t _c over a preferred optical bandwidth and with a preferred data resolution. The minimum spectrum for the plasma is included. Basically, since the now current time t _c a processing chamber 36 in the associated spectrum to the current time t _c for each plasma processing stored in the normal spectral directory 288 to match the current plasma process to be executed in such up A comparison is made with the pattern of the current spectrum, and this comparison is made after the spectrum associated with the current time t _c is compared with this plasma process stored in the normal spectral subdirectory 288. In other words, the current plasma process is efficiently compared simultaneously with each plasma process stored in the normal spectral subdirectory 288 that matches the current plasma process executed in the processing chamber 474 up to the current point in time. If the current spectrum at the current time t _c does not match a particular plasma treatment stored in the normal spectral subdirectory 9288, then this plasma treatment is missing from the list of possible plasma treatments and the spectrum at a new current time t _c later in time. Is no longer compared with this plasma treatment. The "relevance" is the plasma state subroutine of Figure 21 in that a given plasma process stored in the normal spectral subdirectory 288 is compared by the subroutine 852 with the spectrum of the plasma in the chamber 36 at the current time t _c . May be determined in accordance with the time dependent or progress dependent requirements described above with respect to 253. In addition, as in the case of the plasma state subroutine 253 described above with respect to FIG. 21, the plasma state / process recognition subroutine 852 of FIG. The subroutine 852 is configured to allow comparison with plasma processing, and only plasma processing of this criterion is configured for use with the plasma state / process recognition subroutine 852.

The spectrum at the current time t _c from step 860 of the plasma state / process recognition subroutine 852 is stored in the normal spectrum subdirectory 288 from the beginning through the main body of the plasma state / process recognition subroutine 852. It is efficiently compared simultaneously with each of the plasma treatments. The logical operator "Flag ₂ " associated with each plasma process is set to "T" in the previous step 856, so that the subroutine 852 includes step 864 (recipe A), step 880 (recipe B) and step 892 (processing method). X) proceeds to step 868 (recipe A), step 884 (recipe B) and step 892 (process X), in which the subroutine 852 proceeds to the pattern recognition module 370 of FIG. Is set. The pattern recognition module 370 has a corresponding plasma process in which the pattern for the current spectrum at the current time t _c is stored in the normal spectral subdirectory 288 (Recipe A for step 868, Recipe B for step 884 and for step 896). It is determined whether or not it is "matched" with the relevant spectrum of process X). If the current spectrum at the current time t _c matches the relevant spectrum of the plasma process, then subroutine 852 proceeds to step 872, where the clock of subroutine 852 is factor " n " It is adjusted by increasing the current time t _c by. The magnitude of "n" defines the analysis time resolution. Subroutine 852 then proceeds from step 872 to step 916 where step 916 from the normal spectral subdirectory 288 becomes a potential "match" for the current plasma processing executed within the processing chamber 36. All plasma processes are displayed to the appropriate operator (e.g., on display 132 of Figure 6). The plasma state / process recognition subroutine 852 again acquires another spectrum at this new current time t _c at step 860. And the above is repeated as long as the evaluation for the entire current plasma process is not completed by the plasma state / process recognition subroutine 852 as noted in step 918. The current plasma process is terminated and all spectral data is plasma When evaluated by state / process aware subroutine 852, subroutine 852 proceeds from step 918 to step 920, In step 920, the control of the plasma monitoring operation returns to, for example, the startup module 202 of FIG.

Any plasma process stored in the normal spectral subdirectory 288 used immediately or later by the subroutine 852 fails in "matching" with the current plasma process executed in the processing chamber 36. That is, the pattern recognition module 370 determines that the pattern of the spectrum at the current time t _c does not match the relevant spectrum for the corresponding plasma process stored in the normal spectrum subdirectory 2880. One or more steps 828, 884, and 896 are followed by a logical operator "Flag ₂ " for their respective plasma processing (at step 868 for recipe A, at step 884 for recipe B and at step 896 for recipe X). Exit by setting "to" F ". Any plasma processing in the normal spectral subdirectory 288 with its logical operator "Flag ₂ " set to "F" is performed by the pattern recognition module 370 in the processing chamber 36 through the subroutine 852 all the time. It is no longer compared with the current plasma treatment performed in. Step 868 associated with recipe A is bypassed through step 864 when the logical operator "Flag ₂ " for recipe A is set to "F", and step 884 associated with recipe B is followed by the logical operator "Flag ₂ " for recipe B When it is set to "F", it is bypassed through step 880, and step 896 associated with Process X is bypassed through step 892 when the logical operator "Flag ₂ " for Recipe A is set to "F".

As long as at least one plasma process stored in the normal spectral subdirectory 288 is "matched" with each spectrum at each new increment time t _c from step 860, the plasma state / process recognition subroutine 852 may comprise steps 904 and 904; Continue through step 912. However, if this is not the case, then the plasma state / process recognition subroutine 852 exits from step 904 to step 908. The protocol of step 908 is defined to determine whether the current plasma processing executed in the processing chamber 36 is subject to a known error / abnormal stored in the abnormal spectrum subdirectory 292. Accordingly, the plasma state / process recognition subroutine 852 is part of the plasma state subroutine 253 of FIG. 21 that attaches to the abnormal spectral subdirectory 292 and the spectral subdirectory 296 unknown in this manner (ie, Although not shown in the figure, starting at step 266 of subroutine 253, including everything afterwards). The spectrum compared to the abnormal spectrum subdirectory 292 in step 266 of the plasma state subroutine 253 becomes the spectrum associated with the final current time t _c from step 860 of the plasma state / process recognition subroutine 852.

There are three plasma processes (e.g., process "X" is process C) recorded in the normal spectral subdirectory 288, and from step 872 "n" is 1 second and step 860 is time t. _A time dependent requirement is used by the subroutine 852 to define what is to be the relevant spectrum from a given plasma process stored in the normal spectral subdirectory 288, and is executed in the processing chamber 36 first. The current plasma treatment executed at is matched with each recipe A, recipe B and recipe C for the current time t ₁₀ (ie, step 868 (recipe A), step 884 (recipe B), step 896 (method C)). 10 times each). The “clock” of the subroutine 852 is adjusted to t ₁₁ in step 872, and the subroutine 852 acquires the spectrum for the plasma in the processing chamber 36 at this new time t ₁₁ in step 860, and the subroutine Step 868, step 884 and step 896 (step 868, step 884 and step 896, respectively) are performed because the logical operator "Falg ₂ " associated with each plasma stored in the normal spectral subdirectory 288 is still "T". Exit as a condition of "yes". Treatment C than longer matches the normal spectrum subdirectory 288, recipe A and recipe B and remains a subdirectory 288 for this new current time t _11, while a matching from the current the plasma treatment a new current time t ₁₁ Assume that no In this case, step 868 for recipe A and step 884 for recipe B still output “Yes” and proceed to step 872 where the clock of subroutine 852 is adjusted to t ₁₂ . Whereas logical operator "Flag ₂ " for recipe A and recipe B is still "T", step 896 for recipe C sets step 900 for logical operator "Flag ₂ " for recipe C to "F". Exit to As such, step 916 indicates that the current plasma treatment is only potentially Recipe A and Recipe B.

The subroutine 852 in this example obtains the spectrum for the new time at step 860, and the subroutine 852 proceeds to a logical operator check for each plasma process stored in the normal spectral subdirectory 288. Subroutine 852 continues to compare the recipe A and recipe B of the example to the current plasma processing executed in processing chamber 36 through steps 864 and 868 for recipe A and steps 880 and 884 for recipe B. do. However, process C is no longer compared to the current plasma process at current time t ₁₂ because step 892 associated with process C bypasses comparison step 896 associated with and instead proceeds to step 904. The subroutine 852, in step 904, because the logical operator " Flag ₂ " for each recipe A and recipe B is still " T " at the current time t ₁₂ based on the logical value from step 904, Continuing comparison is made between the normal plasma subdirectory 288 and the current plasma processing performed in 36).

Assume that the spectrum at the current time t ₁₂ matches the spectrum for Recipe A at this same time t ₁₂ (via step 868) but not for Recipe B (through step 884). The logical operator "Flag ₂ " for recipe B is set to "F in step 888. In addition," clock "of subroutine 852 is adjusted to t ₁₃ in step 872, and step 916 is normal spectral subroutine 288. Recipe A from) has only the possibility of remaining for the current plasma process executed in the processing chamber 36. The subroutine 852 in this example acquires the spectrum for the new current time t ₁₃ in step 860. Subroutine 852 then proceeds to a logical operator check for each plasma process stored in normal spectral subdirectory 288. Subroutine 852 passes only recipe A through step 864 and step 868 associated with recipe A. And compare the current plasma processing executed in the processing chamber 36. Step 880 associated with Recipe B bypasses its comparison step 884 so that the subroutine 852 Recipe B and Method C are currently subject to plasma processing because it proceeds to step 904 instead and step 892 associated with Process C bypasses its comparison step 896 and allows subroutine 852 to proceed to step 904 instead. and further are not compared. subroutine 852 will now be through the step 904, recipe a to the logical operator "Flag _2" is executed in the current time t, because it is still a "t" at _13, the processing chamber 36 plasma The process is compared with the normal spectrum subdirectory 288 continuously.

Completion of the entire plasma process, executed in the processing chamber 36 and matching at least one plasma process stored in the normal spectral subdirectory 288, causes the subroutine 852 to exit step 918 and proceed to step 920. Control of the plasma monitoring operation may be returned to the startup module 202 of FIG. 13, for example, by step 920 of the plasma state / process recognition subroutine 852.

Plasma Status / Process Recognition Subroutine 924-Figure 24

Another embodiment of a plasma state subroutine that may be used by plasma state module 252 is shown in FIG. Plasma state / process recognition subroutine 924 is normally normal to the current plasma process performed in process chamber 36 by at least initially limiting the irradiation in subdirectory 288 to a single plasma process in subdirectory 288. It relates to achieving an increase in the rate of comparison between the spectral subdirectories 288. In this regard, the person in charge is allowed to indicate what plasma processing should be performed in processing chamber 936. For example, the data input device 60 for the main control unit 58 (FIG. 1) can be used to select one plasma recipe that is performed from a list of plasma recipes on the display 130. The startup module 202 may, if desired, enter the processing method through execution of step 230 of the startup routine 203 of FIG. More typically, a process performed on a stack of wafers 18 will be input somewhere in the production facility and associated with this pile when chamber 36 "reads" the stack from this wafer 18. Plasma recipes to be entered will be performed automatically.

Once the selection has been made at step 928, the plasma state / process recognition subroutine 924 proceeds to step 932 to confirm that the plasma processing is actually stored in the normal spectral subdirectory 288. The information in the process infield 322h (e.g., plasma recipe, plasma cleaning, conditioning wafer) of FIG. Step 932 of the state / process aware subroutine 924.

The spectrum of the plasma in the processing chamber 36 at the current time tc is sub-sized at step 940 if the selected or input process at step 928 has been placed in the normal spectrum subdirectory 288 through execution of step 936. Obtained for routine 924. This current spectrum is compared with the relevant spectrum of the plasma treatment selected in the normal spectrum subdirectory 288. The comparison in step 944 of the method recognition subroutine 924 shows that the pattern of the current plasma at the current time tc (from the current plasma processing performed in the processing chamber 36) is stored in the normal spectrum subdirectory 288. Determine if "matched" with the relevant spectrum of the selected plasma treatment. The “match” according to step 944 may be evaluated through the pattern recognition module 370 of FIG. 15. The "relevance" is the plasma state of Figure 21 in that the spectrum for the selected plasma process in the normal subdirectory 288 is compared by the pattern recognition module 370 with the spectrum for the plasma in the chamber 36 at the current time t _c . It may be determined in accordance with one of the time dependent and progress dependent requirements described with respect to the subroutine 253.

Many operations are performed when there is a " matching " at step 944 of the plasma state / process recognition subroutine 924, and the order in which these steps are performed is not critical to the present invention. Initially, the "clock" of the plasma state / process recognition subroutine 924 is adjusted by the factor "n" (which defines the analysis time resolution) at step 948 to provide a new current time t _c . In addition, the identification of the plasma process for the current operation is displayed to the appropriate individual (eg, display 130 of Figure 6) by performing step 964. Finally, step 958 determines whether all data of the current plasma process has been evaluated. Inquire about it.

Steps 940, 944, 948, 964, 958 of the plasma state / process recognition subroutine 924 are performed as long as the current plasma process used in production in the process chamber 36 matches the plasma process selected from step 928. Is repeated until all data for is evaluated by the subroutine 924, and control of the plasma monitoring operation is performed by performing step 962 of the subroutine 924, for example, in FIG. Is passed to the start-up module 202. The failure from the processing from step 928 and the current plasma processing for "matching" causes the plasma state / process recognition subroutine 924 to proceed from step 944 to the selection module 952. It should be noted that the selection module can be accessed even if the plasma process selected in step 928 is not initially located in the normal spectral subdirectory 299. The manner in which the plasma state / process recognition subroutine 924 proceeds in this type of environment can be similarly determined by the operation of the facility implementing the wafer production system 2. Access to the full normal spectral subdirectory 288 for comparison with the current plasma treatment may include the plasma state subroutine 253 of FIG. 21, the plasma state / process recognition subroutine 790 of FIG. 22 or the plasma state / It may be implemented by step 960 including a protocol for invoking the process aware subroutine 852. Notification of the deviation of the current plasma process from the process selected in step 928 of the plasma state / process recognition subroutine 924 invokes the process alert module 428 discussed above with respect to FIG. If enabled in step 436 of processing subroutine 432 may be provided through the execution of step 956 may provide one or more protocols in connection with this condition. Other options may also be provided (not shown), such as causing the current plasma treatment to end (although it may be the correct plasma treatment).

Certain variables of the subroutine 924 relate to the fact that the same plasma recipe is typically performed on the entire cassette 6, and the cassette 6 can have one or more quality wafers 18 with the production wafer 18. will be. Although the same plasma recipe is performed on this wafer 18, certain differences between the production wafer 18 and the quality wafer (s) 18 may produce a difference in their respective spectral patterns. The logic of the subroutine 924 first compares the current plasma process against the same plasma recipe associated with the production wafer 18 in the normal spectral subdirectory 288, and only the current plasma recipe is available for the production wafer 18. If it does not "look" like a plasma recipe, the current plasma recipe may be compared against the same plasma recipe associated with the quality wafer 18 in the normal spectral subdirectory 288. In addition, entries for production and quality wafers of this same plasma recipe are concurrent in the method presented above with respect to the plasma state / process recognition subroutine 852 of FIG. 23 when the plasma recipe is entered into the subroutine 924. Can be evaluated.

Plasma Status / Process Step Recognition Subroutine 972-Figure 25

Another embodiment of a subroutine that can be used by plasma state module 252 is shown in FIG. 25. Not only can the plasma treatment of FIG. 25 monitor or evaluate the state of the plasma from the plasma treatment performed in the processing chamber 36, but the subroutine 972 also displays the current plasma of the current plasma treatment performed in the processing chamber 36. You can check the steps. As such, subroutine 9922 is characterized as plasma state / process step recognition subroutine 972. Two factors are important in providing this plasma step identification. One is that the steps of the plasma treatment are actually sufficiently different with respect to their corresponding spectra so that they can actually be identified as being the case of the multi-step processing method illustrated in Figs. 17A-C above. The other is that the identification of the plasma step is in some way related to its corresponding spectrum, such as by entering information into the plasma step field 322e discussed above with respect to FIG. 12A.

The plasma state / process step recognition subroutine 972 proceeds with the “parallel” logic and in some way proceeds as the plasma state / process recognition subroutine 852 of FIG. 23. The plasma state / processing step recognition subroutine 972 of FIG. 25 provides a target directory for the pattern recognition module 370 of FIG. 13 to begin in the normal spectral subdirectory 288 (eg, for a "matching" spectrum). Will begin in the normal spectral subdirectory 288). Another preliminary step of the plasma state / process step recognition subroutine 972 is at step 980 where logic operator Flag ₃ is set to “T” for each of the plasma processes stored in normal spectrum subdirectory 288. to be. The instruction under which steps 976 and 980 are executed is not particularly important for the present invention.

Data relating to the current plasma processing performed in the processing chamber 36 is obtained for the subroutine 972 at step 984. Included in this data is the spectrum of the plasma in the processing chamber 36 during the execution of the plasma processing currently performed in the processing chamber 36 at time t _c . Basically, the pattern of the current spectrum of the current time t _c geumbeon (now) each plasma processing sikyeotgo match the current plasma process to the present time t _c stored in the normal spectrum subdirectory 288 used in subroutine 972 The comparison of the patterns of the relevant spectra is then made. This comparison is made before the pattern of spectra associated with a later current time t _{c in} time is compared to these same processes stored in the normal spectral subdirectory 288. In other words, the current plasma treatment effectively compares with each plasma treatment stored in the normal spectral subdirectory utilized in subroutine 972 to "match" the current plasma treatment to the current time. If the spectra at the current time tc from the current plasma process at any time do not match a particular process in the normal spectrum subdirectory 288, then this plasma process is left out of the list of possible plasma processes, and at a new later time, at the current time tc. The spectrum of is no longer compared with this particular plasma treatment. The "relevance" in terms of which spectrum of the selected plasma treatment is compared by the subroutine 972 with the spectrum of the plasma in chamber 36 at the current time tc is related to the plasma state subroutine 253 of FIG. Can be determined in relation to the time dependent or progress dependent requirements discussed above. In addition, as in the case of the plasma state subroutine 253 discussed above with respect to FIG. 21, the plasma state / process step recognition subroutine 972 of FIG. 25 is utilized for comparison with current plasma processing. May be configured to make all plasma processes stored in the normal spectral subdirectory 292, or the subroutine 972 may be configured such that any of these plasma processes are utilized only in subroutine 9252 in any of the manners described above. Can be.

The spectrum at the current time tc from the step 984 of the plasma state / processing step recognition subroutine 972 is effectively stored in the normal spectral subdirectory 288 first through the main body of the subroutine 972. Are compared simultaneously with each plasma treatment. The logical operator "Flag ₃ " associated with each plasma process has been set to "T" in the previous step 980, so the subroutine 972 has steps 988 (process A), 996 (process B) and 1004 (process "X). Will proceed to steps 992 (process A), 1000 (process B), and 1008 (process "X"), where the subroutine 972 is directed to proceed to the pattern recognition module 370 of FIG. Recognition module 370 performs the corresponding plasma processing in which the pattern of the current spectrum is stored in normal spectrum subdirectory 288 at the current time t _c (process A for step 992, process B for step 1000, step 1008). Is determined to be a "match" and a pattern of the associated spectrum of the process "X") At the current time t _c , the pattern of the current spectrum "matches" the pattern of the relevant spectrum of the corresponding plasma process from the subdirectory 288. Subroutine 972 is a factor of " n " By by increasing the current time t _c and proceeds to step 1012 is adjusted. The magnitude of "n" is defined by the analytical time resolution (ie, some portion of the collected data is actually analyzed). Next, all plasma processes from the normal spectral subdirectory 9288 that are still potential "matches" for the current plasma process performed in the processing chamber 36 from subroutine 972 step 1012 (see the display in FIG. Proceeds to step 1016, which is displayed to the appropriate representative). Then another spectrum at the new current time t _c is obtained again in step 984 and the above is evaluated to the plasma state / process step recognition subroutine 972 as mentioned in step 1044. Unless repeated yet. When plasma processing is terminated and all spectral data has been evaluated by the plasma state / process step recognition subroutine 972, the subroutine 972 is configured to control plasma monitoring operations from step 1044, for example, starting up in FIG. Proceeding to step 1048 may be returned to module 202.

Certain plasma processes in the normal spectral subdirectory 288 will soon fail to "match" the current plasma process being performed in the processing chamber 36. That is, the pattern recognition module 370 will determine whether the pattern of the spectrum at the current time t _c does not match the pattern of the relevant spectrum of the corresponding plasma processing stored in the normal spectrum subdirectory 288. The one or more steps 992, 1000 and 1008 are then set at step 1020 for process A and at step 1024 for process B, where the logical operator "Flag ₃ " of their plasma process is set to "F". Step 1028) for processing " X " Any plasma process stored in the normal spectral subdirectory 288 whose logic operator "Flag ₃ " is set to "F" will no longer be compared to the current plasma process by the pattern recognition module 370. Step 992 associated with process A will be bypassed through step 988 when the logical operator "Flag ₃ " for process A is set to "F", and step 1000 associated with process B is performed for process B. When logical operator "Flag ₃ " is set to "F", it will be bypassed through step 996, and step 1008 associated with process "X" is the logical operator "Flag ₃ " for process "X" is "F". When set to will be bypassed through step 1004.

As long as at least one plasma process from the normal spectral subdirectory 288 "matches" each spectrum at each new increment time t _c from step 984, the plasma state / process step recognition subroutine 972 is step 1032 And 1036). However, if not, the subroutine 972 will proceed from step 1032 to step 1040. The protocol of step 10400 is instructed to determine whether the current plasma processing performed in the processing chamber 36 has encountered a known error / abnormality stored in the abnormal spectrum subdirectory 292. Therefore, the plasma state / process recognition subroutine ( 972 is the plasma state sub-figure of FIG. 21 relating to the abnormal spectral subdirectory 253 and the unknown spectral subdirectory 296 (ie, beginning with step 266 of the subroutine 253 and including everything thereafter). That portion of the routine 253. The spectrum compared to the abnormal spectrum subdirectory 292 is then the spectrum associated with the last current time t _c from step 984 of the plasma state / process step recognition subroutine 972. would.

Typical "aging chamber" spectrum-Figures 26a-c

The primary purpose of the plasma state module 252 is to monitor the state of the plasma used to perform plasma processing in the chamber 36. As noted above, the plasma treatment of the product in the chamber 36 will one day begin to adversely affect its performance. This "aging" chamber condition is often, but not always, reflected by the spectrum of plasma in chamber 36 during plasma processing. 26A-C show how the pattern of the plasma spectrum can change time as the chamber "ages".

FIG. 26A shows a spectrum 1052 of a typical plasma (eg, "Healthy" plasma) while the processing chamber 36 is in clean conditions and the plasma recipe is run through the product. FIG. 26B shows the spectrum 1060 after many spectral recipes have been performed in the processing chamber 36 and where a recipe of the same plasma is actually being performed on the product within the chamber 36. The plasma recipe proceeds in the chamber 36 at a time between FIGS. 26A and 26B, where aging of the chamber 36 begins to progress, but the plasma state is sufficiently degraded since the interior of the chamber 36 is required to be clean. Did. As a result, FIG. 26C shows a spectrum 1068 of a typical plasma during application of the plasma recipe to the product in the chamber 36 as shown in FIGS. 26A-26B, and the previous plasma recipe in the treatment chamber 36. In the case of applying, the internal conditions of the processing chamber 36 were further deteriorated. This spectrum 1068 may be selected by the operator of the device performance of the wafer production system as an indicator of the chamber 36 in conditions for cleaning (eg, “dirty / unhealthy plasma”, “dirty chamber”). " Condition). For example, if a product produced in chamber 36 is defective at some point, and product analysis traces back to its cause under chamber 36 conditions, the spectral data from the application associated with this defective product is It may be selected as an indicator of the condition. However, it is contemplated that it would be desirable to identify dirty chamber conditions prior to impairing the product advanced in chamber 36. That is, it would be desirable to identify the tendency that the conditions of chamber 36 deteriorate and that tendency is associated with dirty chamber conditions so that products are not discarded because of dirty chamber conditions. This can be done in conjunction with spectral data from previous applications with defectives made in dirty chamber conditions (even if the product so produced is not yet defective).

Each spectrum 1052, 1060, and 1068 each represents various intensities (y-axis, units of nm) at various wavelengths (x-axis and units are nm) and the number of intensities is "recovery" of the number of peaks (1056, 1064, 1072). ). Comparison of the respective spectra 1052, 1060, 1069 shows that their binding pattern is different from one another, including but not limited to the following. 1) In the wavelength region of about 440 nm, the peak 1056a in the spectrum 1052 of FIG. 26A has an intensity of about 3,300, the peak 1064a in the spectrum 1060 of FIG. 26B has an intensity of about 3,300, and the spectrum 1068 of FIG. 26C. Peak 1072a has an intensity of about 2,700. 2) In the wavelength region of about 525 nm, the peak 1056b in the spectrum 1052 of FIG. 26A has an intensity of about 2,800, the peak 1064b in the spectrum 1060 of FIG. 26B has an intensity of about 2,900, and the spectrum 1068 of FIG. 26C. Peak 1072b has an intensity of about 2,100. 3) In the wavelength region of about 560 nm, the peak 1056d in the spectrum 1052 of FIG. 26A has an intensity of about 400, the peak 1064d in the spectrum 1060 of FIG. 26B has an intensity of about 700, and the spectrum 1068 of FIG. 26C. Peak 1072d has an intensity of about 1,200. 4) In the wavelength region of about 595 nm, the peak 1056e in the spectrum 1052 of FIG. 26A has an intensity of about 2,100, the peak 1064e in the spectrum 1060 of FIG. 26B has an intensity of about 2,000, and the spectrum 1068 of FIG. 26C. Peak 1072e has an intensity of about 2,000. 5) In the wavelength region of about 625 nm, although there is about 200 (noise) intensity in the spectrum 1052 of FIG. 26A, no substantial peak is seen, and the peak 1064f in the spectrum 1060 of FIG. 26B is about 900 intensity. In the spectrum 1068 of FIG. 26C, the peak 1072f has an intensity of about 1,500. These are some examples, but peaks 1056 in spectrum 1052 of FIG. 26A, peaks 1064 in spectrum 1060 of FIG. 26B, and peaks 1072 in spectrum 1068 of FIG. 26C are at each wavelength. Since it is clear that one or more of the are different in intensity, in some sense the shape of the spectrum may be used as a criterion for determining when to clean the chamber 36. That is, the distinction of the pattern between the spectra 1052, 1060, and 1068 may be used to show the appropriate characteristics of the conditions of the processing chamber 36 in relation to the cleaning schedule.

At least two options remain to realize the spectrum in the plasma spectral directory 284 of FIG. 9, which is at least considered an indication of the chamber 36 requiring cleaning. The plasma spectrum in dirty chamber conditions may include the abnormal spectral subdirectory 292 of FIG. In this case, the plasma state subroutine 253 of FIG. 21 includes the plasma state / process recognition subroutine 790 of FIG. 22, the plasma state / process recognition subroutine 852 of FIG. 23, and the plasma state / process of FIG. Each of the recognition subroutine 924 and the plasma state / process subroutine 972 of FIG. 25 will include the capability of “chamber condition monitoring” in the manner mentioned above. The method of obtaining one or more spectra that are indicative of dirty chamber conditions is as follows. The plasma recipe applied to the product in the processing chamber 36 does not conform to any plasma recipe stored in the normal spectral subdirectory 288 and is also an abnormal spectral sub, as mentioned above with reference to the plasma state 253 of FIG. Consider a situation where it does not " match " even with known errors / aberrations stored in directory 292. Plasma spectra from these plasma recipes are stored in an unknown spectral subdirectory 296. If the spectrum from such a plasma recipe is frequently irradiated and determined to be associated with dirty chamber conditions, then at least one of the spectra from this plasma recipe that does not fit either of the normal spectrum subdirectory 288 or the abnormal spectrum subdirectory 292 is determined. Can be selected as an indicator of dirty chamber conditions. This spectrum will be transferred to the abnormal spectral subdirectory 292 and recognized as a known error condition. If these same conditions are met (automatically or manually) upon the execution of the plasma treatment in the same chamber 36, the protocol performed (automatically or manually) will review the process alert subroutine 432 of FIG. Warnings of one or more dirty chamber conditions will be registered in connection with the above discussion.

Chamber Condition Module 1084-Figure 27-29

Another method of implementing spectral indicators of dirty chamber conditions includes chamber condition module 1084 that includes data in subdirectory 300 of chamber conditions and is separate from plasma state module 252. One embodiment of a subroutine that can be used to monitor chamber 36 conditions through comparative analysis with chamber conditions subdirectory 300 is shown in FIG. Many of the methods in the chamber condition subroutine 406 of FIG. 27 may be implemented to monitor the current plasma processing applied to the lever 36. Loop 190 of the plasma state subroutine of FIG. 16 may include a protocol at step 194 invoking chamber condition subroutine 406 of FIG. That is, the subroutine 406 is called by the plasma state subroutine 253 to perform each step 254 of the subroutine 253 in the current spectrum at the current time t _c for the subroutine 253. Can be. The same spectrum may be made available to the chamber condition subroutine 406 through the performance of each step 410 of the subroutine 406. This spectral pattern may be compared with the spectral pattern in the chamber condition subroutine 300 in step 412 (step 408 of subroutine 408 may be a target for pattern recognition module 370 of FIG. 13). To the directory). More specifically, step 412 of chamber condition subroutine 406 is directly connected to subroutine 406 to go to pattern recognition module 379 of FIG. If the pattern of the spectrum of the plasma in the processing chamber 36 at the current time t _c does not match any spectrum in the chamber condition subdirectory, the chamber condition subroutine will go from step 414 to step 416. At this stage, control is returned to the loop 190 of the plasma state subroutine of FIG. 21 with " n " Another spectrum is obtained for the chamber condition subroutine 406 at the new current time t _c , at which point step 194 of loop 190 appears again from the plasma state subroutine 253 of FIG. The chamber condition subroutine 406 of FIG. 27 is called to repeat the analysis. Any one of the subroutines 790, 852, 924, and 972 can include this form (invisible) feature to provide a plasma status assessment.

The chamber condition subroutine 406 of Figure 27 continues until one of the two conditions is met in the manner mentioned above. The first is that the plasma monitoring operation is terminated through the plasma state subroutine 253 of Fig. 21, when all data of the current plasma processing is calculated, and the plasma processing operation is finished.

The second condition in which the chamber condition subroutine 406 terminates in the above-mentioned method is that the pattern recognition module 370 is in the plasma spectrum and chamber condition subdirectory 300 in the processing chamber 36 at its current time t _c . This is the case when it recognizes that it fits between at least one spectrum. In this case, the subroutine 406 proceeds from step 414 to step 418, where the chamber condition subroutine 406 of FIG. Control will be switched to 428).

The chamber condition subroutine 406 is operated concurrently with the plasma state module 252 each time and is accessed every time the plasma state module (eg, by having step 236 of the initiation routine 203). It also includes a protocol for invoking the subroutine 406.) In this case, an additional step of setting the clock may be included, and in a manner similar to the other subroutines shown here, as in steps 410, 412, 414. The loop defined by this step may be included.

In addition to comparing the pattern of the current plasma spectrum in chamber 36 to the pattern of spectra associated with the dirty chamber condition previously, there are methods for determining whether process chamber 36 is in a cleaning condition. One method is realized by the chamber condition subroutine 1088 shown in FIG. First, the premise used in the chamber condition subroutine 1088 is that if any plasma treatment of the multi-stage plasma treatment takes more time to complete than the previously defined time limit for the plasma stage, the degree of cleaning operation must be performed. The interior of the chamber 36 is deteriorated. The time required to complete the plasma step will increase as the conditions inside the processing chamber 36 deteriorate. For example, if a given plasma condition takes 30 seconds to achieve the desired / scheduled end result in the “clean” process chamber 36, then it will take about 50 seconds in the chamber 36 if it is in the middle of the “clean” cycle. In dirty chamber conditions, it will take over 70 seconds. In some cases, processing chamber 36 may deteriorate where the results of the plasma step are not actually recognized. Thus, if the chamber condition subroutine 1088 takes a given plasma step longer than the associated time limit, it is assumed that the associated cause is the presence of a dirty chamber condition.

Since the chamber condition subroutine 1088 needs to "know" the identification of both the plasma process and the processing step that performs the analysis, the chamber condition subroutine 1088 is the plasma state / process recognition subroutine (Fig. 22). 790, plasma state / process recognition subroutine 852 of FIG. 23, or plasma state / process recognition subroutine 924 of FIG. 24 are integrated in a manner related to operation of one or more of (eg, therein). By being merged, being called simultaneously). In each of these cases, once the identification of the plasma process is determined, each of the particular plasma steps involved in this plasma step is known. Moreover, chamber condition subroutine 1088 will be integrated in the same manner as plasma state / process step recognition subroutine 972 of FIG. 26 identifying the current plasma step performed in chamber 36.

With reference to FIG. 28, if there is a maximum time limit for each plasma step that is performed in the plasma process applied to the chamber 36, it should be obtained by the chamber condition subroutine 1088 in step 1092. The human will have to manually put the maximum timeout of the plasma step into the data input device 132 for the purpose of step 1092 of the chamber condition subroutine 1088. A more preferred approach is to include this time limit in the portion of the maximum time 322f of the total processing steps for the main data input 350 of the plasma processing stored in the normal spectral subdirectory 288 (FIG. 12A). The maximum time limit is determined empirically, and is entered in the maximum time 322f column of the total processing step. Alternatively, the limitations mentioned in step 1092 may match the time determined by the operator of the fabrication facility using the wafer fabrication system 2 to be necessary to maintain the desired production rate, which may be the Enter the maximum time (322f) field.

Information for step 1092 of chamber condition subroutine 1088 will then be automatically recovered from cell 322f of the maximum time of the corresponding total processing step of FIG. 12A related to the current plasma processing step applied in chamber 36. Can be. The amount of time required to complete each plasma step of the current plasma process applied to process chamber 36 is monitored in step 1096 of chamber condition subroutine 1088. The process clock (not shown) starts when the plasma stage is initialized and does not stop until the plasma stage is finished. Step 1096 may identify the end point of the current plasma step using the endpoint detection module 1200 discussed below in connection with FIGS. 52-58. Step 1100 of the chamber condition subroutine 1088 is compared between the time used in the current plasma step from step 1096 and between the maximum timeout from step 1096. As long as this time limit has not passed, chamber condition subroutine 1088 will proceed to step 1108 where it is determined whether the current plasma process is to be terminated. The continuation of the plasma treatment will allow the chamber condition subroutine 1088 to continue the analysis, and analysis continues through the performance of the mentioned steps 1096 and 1100. However, when plasma processing ends, the subroutine 1088 will proceed from step 1108 to step 1112 to control the plasma monitoring operation and return to, for example, the initiation module 202 of FIG.

The chamber condition subroutine 1088 will continue to run in the manner described above as long as the time does not exceed the corresponding maximum time limit in the current plasma processing step. In this case chamber condition subroutine 1088 proceeds from step 1100 to process alert module step 1104, which is called dirty chamber condition 428 of FIG. 14, and the types of operations indicated above are undertaken. When the process alarm module 428 of FIG. 14 controls the module that called the module 428, the chamber condition subroutine 1088 causes the operation of plasma monitoring, for example, the control return of the initiation module 202 of FIG. To include one step after step 1104.

Another method of determination is that the interior of the processing chamber 36 for cleaning is implemented by the chamber condition subroutine 1120 shown in FIG. 29 and is the same as the chamber condition subroutine 1088 mentioned above in connection with FIG. Is realized. The premise used in the chamber condition subroutine 1120 is that the cleaning operation is performed when the required time until the entire plasma process (the whole of the plasma stage) is completed takes longer than the time limit previously set for the completion of the plasma process. The interior of the processing chamber 36 has degraded to the point that it must be performed. The time it takes to complete the total plasma treatment will increase as contaminants form on its inner surface as the internal conditions of the treatment chamber 36 deteriorate. For example, if a given plasma treatment takes 180 seconds in the "clean" process chamber 36 to achieve the desired / scheduled result, it will take 220 seconds in the chamber 36 during the "clean" cycle, and in dirty chamber conditions It will take 300 seconds. In this case the processing chamber 36 will actually deteriorate and will not achieve the desired end result of the plasma processing. Thus, the chamber condition subroutine 1120 assumes that if the given plasma treatment takes longer than the time limit associated therewith, the cause is a dirty chamber condition.

Since the chamber condition subroutine 1120 needs to "know" the identification of the plasma process in order to perform the analysis, the chamber condition subroutine 1120 is the plasma state / process recognition subroutine 790 of FIG. The operation of any one or more of the plasma state / process recognition subroutines 852 of FIG. 24 and plasma state / process recognition subroutines 924 of FIG. 24 (eg, merged into or concurrently called). Will be integrated in the way. Moreover, the chamber condition subroutine 1088 may also be integrated in the manner of the plasma state / process recognition subroutine 972 of FIG. 25 to identify individual processing steps and current plasma processing performed in the chamber 36. .

29, the maximum time limit for plasma processing performed in chamber 36 is entered into chamber condition subroutine 1120 in step 1124. A person manually enters the data entry device 132 and the maximum time limit for the corresponding plasma processing for the purpose of step 1124 of the chamber condition subroutine 1120. A more preferred approach is to include this time limit in the maximum time column 322g of the total processing for the main data entry 350 of the corresponding plasma processing stored in the normal directory spectrum 288. The maximum time period will be determined empirically and entered in the cell 322g of the corresponding total recipe time. Alternatively, the limitations associated with step 1124 may be equal to the time determined by the operator of the manufacturing facility using the wafer production system 2 to be necessary to maintain the desired production rate, which is the corresponding maximum total recipe. It will be entered in the column of time 322g. Information for step 1124 is automatically retrieved from the maximum time column 322g of that total process of FIG. 12A associated with the current plasma process applied in chamber 36.

The amount of time required to complete the current plasma process applied to process chamber 36 is monitored in step 1128 of chamber condition subroutine 1120. The process step clock (not shown) begins with the corresponding plasma step being initialized (eg, when the plasma is "on" in chamber 36) and when this plasma process ends (eg, the chamber ( Do not stop until the plasma is "off". Step 1128 may use the endpoint detection module 1200 discussed below in connection with FIGS. 52-58. Step 1132 of the chamber condition subroutine 1120 is compared between the time used in the current plasma step from step 1128 and the maximum timeout from step 1124 associated therewith. As long as this time limit has not passed, the chamber condition subroutine 1120 will proceed to step 1140, where it is determined whether the current plasma process is to be terminated. The continuation of the plasma treatment will allow the chamber condition subroutine 1120 to continue the analysis through the performance of steps 1128 and 1132 in the manner mentioned above. However, when the plasma processing ends, the subroutine 1120 proceeds from step 1140 to step 1144 where the plasma monitoring operation is controlled to return to, for example, the initiation module 202 of FIG. 15.

The chamber condition subroutine 1120 will continue to run in the above-described manner so long as the time used in the current plasma processing step does not exceed its maximum time limit. In this case the chamber condition subroutine 1120 proceeds from step 1132 to step 1136 where the process alert module 428 of FIG. 14 is called based on the dirty chamber condition and where the above-mentioned operations are performed. If the process alarm module 428 of FIG. 14 is set to re-control the module that called the module 428, the chamber condition subroutine 1120 includes step 1136 step by step to perform a plasma monitoring operation, for example, FIG. Up to control of the start module 202 of 15 is restored.

Spectrum of a Typical Cleaning Process-FIGS. 30A-D

Sometimes the chamber 36 performs some form of cleaning operation after the "dirty chamber condition" has been identified by any of the aforementioned methods. 30A-D show the differences in the spectral pattern of the plasma in chamber 36 at various stages. Not only shows how the current processing module 250 measures the state of the plasma treatment, but also shows how the spectrum analysis can show differences between different plasma types. 30A shows a typical plasma spectrum of the plasma recipe performed in process chamber 36 in which it is determined that a cleaning operation is required. The same plasma recipe in the same process chamber 36, the spectrum 1440 in 30a and the spectrum 1450 in FIG. 30D, but after the controlled wafer operation, where the preparation of the chamber 36 for the process production wafer 18 is complete and clean. Compare under conditions. Note the different intensities of the peaks in the two spectra 1440 and 1450 at various wavelengths. Whereas there are two peaks around the 550 nm wavelength of spectrum 1440 of FIG. 30A, the spectrum 1450 of FIG. 30D has only one peak in the same wavelength range. In addition, in the spectrum 1440 of FIG. 30A, one peak is present in the 625 nm wavelength region, while there is no peak in the spectrum 1450 of FIG. 30D. This difference is easily identified to identify when the process chamber 36 should be cleaned at least by some method.

The cleaning protocol shown in FIG. 30 begins with wet cleaning in chamber 36 which is vented and open, with the inner surface of chamber 36 wiped with one or more suitable solvents. The operation of plasma cleaning may be applied to the previous chamber 36, but may not be able to adequately handle the internal conditions of the chamber 36 to the extent desired. After wet etching, the chamber 36 is resealed and plasma is introduced into the chamber 36 without product. Spectrum 1444 of Figure 30B is due to the typical plasma in the treatment chamber 360 when there is no product at the start of the plasma cleaning operation. With the same plasma in the same treatment chamber 36, the residue from the wet clean is Compare the spectra 1448 of Fig. 30C and the spectra 1444 of Fig. 30B removed by plasma cleaning, noting the intensity of the different peaks of both spectra 1444 and 1448 at various wavelengths, especially 650 and 750 nm. In the wavelength region, the spectrum 1444 of FIG. 30B has two substantial peaks, while the same peak in the spectrum 1484 of FIG. 30C is significantly reduced.

Finally, compare the spectrum 1450 at the end of the conditioning wafer operation with the spectrum 1482 at the end of the plasma cleaning. Spectrum 1484 of FIG. 30C is due to a typical plasma in process chamber 36 at the end of plasma cleaning of chamber 36 where the residue of wet etching has been properly treated. Compare the spectrum 1484 from FIG. 30C with the spectrum 1450 of FIG. 30D after processing of multiple conditioning wafers in the same plasma or chamber 36 in the same processing chamber 36. Comparing the difference in intensities of the peaks of both spectra (1448, 1450) at various wavelengths, especially in the 650 and 750 nm wavelength range, the spectrum (1448) of FIG. 30C has two peaks, while the spectrum (1450) of FIG. It does not have a peak in this region.

Plasma Monitoring Assembly 500-Fig. 31-36

Deterioration of the interior by performing plasma processing in the treatment chamber 36 also degrades the inner surface 40 of the window 38 in the chamber 36 exposed to the plasma (outer surface isolated from the plasma). (42) is not affected by plasma). Note that the data of the plasma processing module 250 is obtained through window 38 as a feature of the optical emission of the plasma in the chamber 38. Therefore, as the window 38 deteriorates, the reliability of the result of the current plasma processing module 250 also deteriorates. An example of treating such conditions by other conditions that may adversely affect the reliability of the results provided by the current plasma processing module 250 is shown in FIG. 31 in the form of a plasma monitoring assembly 500.

The plasma monitoring assembly 500 of FIG. 31 includes all of the points mentioned above in connection with the plasma monitoring assembly 174 of FIG. In this case, the plasma monitoring assembly 500 includes a plasma monitoring module 560 (FIGS. 31-32), which includes all of the same modules indicated above with respect to the plasma monitoring module 200 of FIG. 7 and is part of the PMCU 128 ′. (E.g., the same current plasma processing module 250 and all of its submodules). Also, the spectrometer assembly 506 and the CCD array 548 are the same with respect to components identified similarly to the plasma monitoring assembly 174 of FIG. Increasing the accuracy of the evaluation of the plasma treatment by the current plasma processing module 250 is useful for obtaining data for the module 250 through the plasma monitoring assembly 500 because of the correction capability. Specifically, the plasma monitoring assembly 500, more specifically the plasma monitoring module 560, includes a calibration module 552 or window monitoring comprising a calibration module or window monitoring that is part of the plasma monitoring module 560 as shown in FIG. It includes. PMCU 128 'is as described above in connection with plasma monitoring assembly 174 of FIG. 6 except that it includes additional features in connection with calibration module 562. In this way, the indication of the "prime code" is useful in connection with the PMCU 128 in FIG.

The calibration assembly 552 provides some advantages for the plasma monitoring assembly 500 of FIG. 31 over the plasma monitoring assembly 174 of FIG. The correction assembly 552 of Figure 31 provides two main functions. One of these functions is to calibrate the plasma processing module 250 (FIGS. 7 and 32) to the wavelength transfer of the plasma spectrum in the processing chamber 36. Wavelength transfer may be influenced by the spectrometer assembly 552, but may be caused by other causes. Another function provided by the calibration assembly 552 of FIG. 31 is to calibrate the current plasma processing module 250 for changes in intensity of the plasma spectrum in the processing chamber 36. The intensity change may be due to “aging” of the window 38 in the chamber 36 as the optical emission occurs, but may also be due to other conditions. Since the window 478 in FIG. 31 has a different shape from the window 38 in FIG. 6, other reference numerals are used in the processing chamber as well as the window. Thus, the process chamber of FIG. 31, identified by reference numeral 471, can be used at one or more positions of chamber 36 in FIG.

The correction assembly 552 of FIG. 31 includes a correction light source 556 and is connected to the window 478 of the processing chamber 474 by the fiber optic cable assembly 504 in operation. The correction light source 556 substantially has a primary correction light source 556a and a secondary correction light source 556b. The primary correction light source 556a uses the primary type of light to sense the wavelength shift associated with the plasma monitoring assembly 500. The intensity change is sensed through the secondary correction light source 556b, and uses a secondary type of light different from the primary type of light. The advantage of using two different types of light to detect intensity variation and wavelength transfer, respectively, will be addressed in conjunction with FIGS. 40-48 and the correction module 562. Although not preferred, the same type of light may be used to detect both intensity variation and wavelength transfer (eg, light having multiple discrete intensity peaks).

The fiber optic cable assembly 504 also connects the window 478 with the spectrometer assembly 506 in operation, and the window monitoring assembly 552 can directly monitor the condition of the window 478. In general, especially when there is no plasma in the processing chamber 474, the correction light travels straight from the correction light source 556 to the window 478 via the fiber optical cable 504. As such, the operation of the calibration assembly 552 does not depend on any manner of plasma in the chamber and is in fact independent of any data related to the plasma.

The spectrometer assembly 506 of FIG. 31 is preferably in solid phase form, and one embodiment includes three individual solid phase forms of spectrometers 516a-c that analyze different wavelength regions as shown in FIG. In this case, the spectrometer 516a analyzes the region 246nm to 570nm, the spectrometer 516b analyzes the region 535nm to 815nm, and the spectrometer 516c analyzes the region 785nm to 1014nm. The overlap between the individual spectrometers 516 reduces the loss of optical emission data in the transition region and facilitates alignment of each of the three spectra. Each of these spectra 516 is effectively paralleled by a fiber optic cable assembly 5040, as shown in more detail in FIG.

The fiber optic cable assembly 504 of FIG. 34 includes three inner cables 508 surrounded by six outer cables 512. Light from the correction light source 556 is reflected by the window 478 while traveling straight through the external cable 512 to the window 478 during the execution of the corrections mentioned below in connection with the correction module of FIGS. 40-48. The light is internal cable 5080 of the fiber optic cable assembly 504 (as is the light from inside the chamber 474 while plasma processing is performed in the chamber 474 when the calibration assembly 552 is activated or inactive). The internal cable 508 of one of the fiber optic cable assemblies is connected to each of the spectrometers 516 of the spectrometer assembly 506, as shown in Figure 33. From the correction light source 566 This data received through the spectrometer assembly 506 is directly connected to the inner surface 482 of the window 474, and is directly calibrated to the internal surface conditions of the window 478. Suitable for characterizing 552.

One function of the calibration assembly 552 is to determine if the inner surface 482 of the window 478 has an effect on the light emitted from the processing chamber 474 during plasma processing, and the light is currently determined by the plasma processing module. This is because it is used at 250. The calibration assembly 552 also handles the presence of the outer surface 486 of the window 478. 31 and 35, the outer surface 486 and the inner surface 482 of the window 478 are arranged not parallel. As also mentioned in other methods, and as also shown in FIGS. 31 and 35, the inner surface 482 of the window 478 is at least substantially parallel to the principal axis of light from the correction light source 556 because the window 478 is directly connected to it. The outer surface 486 of the window 478 lies non-perpendicular to the reference axis 490 while lying perpendicular to the mating reference axis 490. The angle between the reference axis 490 and the outer surface 486 of the window 478 in one embodiment is in the range of 2 ° to 45 °, in other embodiments this angle is less than the critical angle. The relative position of the outer surface 486 and the inner surface 482 of the window 478 is from an axis 490 away from the inner cable 508 of the fiber optic cable assembly 504 that leads to the spectrometer assembly 506. Affects having a portion of the correction light reflected by the outer surface 486 of the remotely connected window 478. Thus, when the correction light is sent from the correction light source 556 to the window 478 via the external cable 512 of the fiber optical cable assembly 504, the inner cable 508 of the fiber optical cable assembly 504 is “seeing”. "The significant portion of the light is not the light-which is reflected from the inner surface 482 of the window 478-but from the outer surface 486 of the window 482. The inner surface 482 of the window 478 is affected by the performance of the plasma treatment in the processing chamber 474 and the light affected by the light emitted from the processing chamber 474 through the window 478. Affect. Thus, the light received by the spectrometer assembly 506 during the calibration run by the window monitoring assembly 552 shows an accurate depiction of the condition of the inner surface 482 of the window 486. In addition, by combining a wide band anti-reflection film on the outer surface 486 of the window 478 (eg, of a multilayer structure or a laminated structure), at least in the region where the correction light affects the outer surface 486. It may be strengthened. This type of film reduces the amount of correction light reflected by the outer surface 486, thereby increasing the amount of correction light passing through the outer surface 486 of the window 478 to the inner surface 482. Maintaining an appropriate relative position between the window 478 on the chamber 474 and the fiber optic cable assembly 504 is important for the operation of the current plasma processing module 250 as well as the calibration module 562. One method of coupling the fiber optic cable assembly 504 and the window 478 is shown in FIG. 36 in the form of a fixture assembly 1538. Fixture assembly 1534 includes a window fixture 1538 that securely supports window 478 and engages (eg, through one or more screw fasteners) to allow removal from process chamber 474. There is a cavity or recess 1542 in the interior of the window fixture 1538 and the connection with the outer surface 486 of the window 478. The surface of the window fixture 1538 delimiting the recesses 1542 is anodized so that any portion of the correction light can be absorbed from the correction light source 506 reflected by the outer surface 486 of the window 478 during the execution of the correction. Treated black The light absorbing film can be usefully used to provide such a function.

Fixture assembly 1534 also includes a fiber fixture 1546 (eg, one or more threaded fasteners) that is suitably connected (eg, removable) to window fixture 1538. The recess 1542 in the window fixture 1538 is a confined space in a condition aligned through the outer surface 486 of the window 478 and the back portion of the fiber fixture 1546. Appropriate processing of the portion of the fiber fixture 1546 sealing the recess is performed to reflect the portion of the correction light reflected by the outer surface 486 of the window 478 and the inner surface 482 of the window 478. The likelihood of portions of corrected light may be reduced and provided to the spectrometer assembly 506 via the fiber optic cable assembly 504.

The fiber optic cable assembly 504 receives the fiber fixture coupling (coupling) 1554 and the inner cable 508 and the outer cable 512 on the fiber fixture 1546 so that they can be removed or detached. At the distal end of the assembly 504, it is coupled with the fiber fixture 1546 by a cable bond 1558. The ends of the inner cable 508 and the outer cable 512 are projected relative to the outer surface 486 of the window 478 at a position perpendicular to the port extending through the fiber fixture 1546 and removed from the window fixture 1538. The set 1542 is cut. Thus, the correction light from the correction light source 556 travels straight through the outer cable 512, through the port 1550 in the fiber fixture 1546, through the window fixture 1538 and to the outer surface of the window. The correction light reflected by the inner surface 482 of the window 478 passes through the recess 1542 in the window fixture 1538, through the port of the fiber fixture 1546, and inside the fiber optic cable assembly 504. Hover to surface 508 and also to spectrometer assembly 506. The special case in which the calibration is performed using this arrangement is handled with respect to the calibration module 562 of FIGS. 40-48.

Plasma Monitoring Assembly 700-Fig. 37-39

And a plasma monitoring assembly provided in the correction module 562 (FIG. 32), which can also reduce the possibility of interference between the correction light portion reflected by the window inner surface and the correction light portion reflected by the outer surface of the window. Another embodiment is shown in FIG. Although the arrangement shown in FIG. 31 is more preferred, this embodiment may be used instead of the plasma monitoring assembly 500 of FIG. The plasma monitoring assembly 700 of FIG. 37 generally includes a calibration assembly 726 and a plasma monitoring module 560 (FIGS. 32 and 37) that are part of PMcU 128 ′. Spectrometer assembly 712, ccD array 716, ?? The correction light source 728 is the same embodiment in that it is a similarly identified component of FIG. As a result, the plasma monitoring assembly 700 of FIG. 37 is fundamentally different in terms of the optical arrangement of the correction components from the plasma monitoring assembly 500 of FIG.

One function of the correction assembly 726 is to determine if the inner surface 40 of the window 38 is affected by the light rays emitted from the processing chamber 36. The correction assembly 726 also handles the presence of the outer surface 42 of the window 38. As shown in FIGS. 37-38, the window 38 on the processing chamber 36 includes an inner surface 40 and an outer surface 42 which are arranged non-parallel (as shown in FIGS. 1 and 6). In order to reduce the influence of light reflected by the outer surface on the correction module 562, the correction assembly 726 is used to correct the light source 728 and the window 38 in operation using the fiber optical cable 704. Another fiber cable 708 connects the window 38 and the spectrometer assembly 712 in operation. The fiber optic cable 704 is arranged to affect the outer surface 42 of the window 38 when it is angled rather than perpendicular from the correction light source 728 and the fiber optic cable 708 is an inner surface of the window 38. It is arranged to receive any light reflected by the outer surface 42 of the window 38 as well as the portion of the correction light reflected by the 40. 38, the axis 732 represents the direction of light from the correction light 728, and as it impinges on the window 38, the axis 736 is directed to the outer surface 42 of the window 38. As shown in FIG. And the axis 740 corresponds to the portion of the correction light reflected by the inner surface 40 of the window 38 (refraction is not visible).

In one embodiment, the angle α between the axis 732 and the outer surface 42 of the window 38 is in the range of about 10 ° to about 70 °, and the inner surface of the axis 740 and the window 38 ( The angle θ between 40) is in the range of about 10 ° to about 70 °, and the axes 736 and 740 cancel out in an amount of about 2 mm to about 20 mm.

The relative position as mentioned above of the inner surface 400 of the window 38, the outer surface 42 of the window 38 and the fiber optic cable 704 is reflected by the outer surface 42 of the window 38. When a portion of the corrected light is reflected, the fiber optical cable 708 is prevented from being input. Thus, when the correction light is sent from the correction light source 728 to the window 38 through the fiber optical cable 704, the significant portion of the light that the fiber optical cable 708 "sees" is the outer surface of the window 38 ( The light reflected from 42 is not reflected from the inner surface 40 of the window 38. The inner surface 42 of the window 38 is affected by performing plasma processing in the processing chamber 36 and affects the light emitted from the processing chamber 36 through the window 38. Thus, the light received by the spectrometer assembly 712 during the calibration run by the window monitoring assembly 700 represents an accurate depiction of the condition of the inner surface 40 of the window 36. In addition, in the region where the correction light affects the outer surface 42, a wide band of anti-reflection film (for example, a multilayer structure or a laminate structure) is bonded to the outer surface 42 of the window 38. The reinforcement of the arrangement shown in FIG. 37 may also be achieved. This type of film reduces the amount of correction light reflected by the outer surface 42, thereby increasing the amount of correction light going through the outer surface 42 of the window 38 to the inner surface 40. Indeed, the embodiment shown in FIG. 31 is at least essentially with respect to both the inner surface 40 and the outer surface 42 together with the window of the type shown in embodiment 37 where the above mentioned film is included in the window 38. It may be used with the ends of the fiber optic cable assembly 504 projected relative to the window 38 to form a vertical angle. This arrangement allows a portion of the correction light to be present (not shown) with respect to the inner cable 508 of the fiber optic cable assembly 504 at this deviation, despite the presence of the antireflection film on the outer surface 42 of the window 38. It is not desirable because it will still be retroreflected. As a result, the portion of the correction light reflected by the inner surface 40 of the window 38 back toward the inner cable 508 will cause some interference.

In addition to the embodiment of FIG. 37, maintaining an appropriate relative position between the window 38, the fiber optic cable 708, and the fiber optic cable 704 on the chamber 36 is not only corrective module 562 but also present. It is also important for the operation of the plasma processing module 250. One of the combinations described above is shown in FIG. 39 in the form of a fixture assembly 1564. The fixture assembly 1564 includes a window fixture 1568 that securely holds the window 38, and allows it to be coupled with the process chamber 36 (eg, via one or more screw fasteners). There is a cavity or recess 1572 in the outer surface 42 and connections of the window 38 and in the interior portion of the window fixture 1568.

Fixture assembly 1564 also includes a fiber fixture 1576 that is suitably connected with the window fixture 1568 (eg, one or more threading devices). The recess 1572 in the window fixture 1568 is a closed space under conditions arranged through the rear portion of the fiber fixture 1576 and the outer surface 42 of the window. Each of the fiber optic cables 704 and 708 is removably connected to the fiber fixture 1576. The fiber fixture bond 1580b in the fiber fixture 1576 is placed in the proper direction to make a proper connection from the correction light source 704 to the fiber optical cable 704, while the fiber fixture bond on the fiber fixture 1576 1580a) disposed in the proper direction to make a proper connection with the fiber optic cable 708 leading to the spectrometer assembly 712. The distal ends of the fiber optical cables 704 and 708 project to the outer surface 42 of the window 38 at an appropriate angle, in an arrangement perpendicular to the ports 1584a and 1584b, respectively. Each of the ports 1584a and 1584b extends through the fiber fixture 1576 to cut the recess in the window fixture 1568. Thus, the correction light from the correction light source 728 passes through the fiber optic cable 704, through the port in the fiber fixture 1576, and through the port in the window fixture 1584b, to the outer surface of the window 478. Go straight to (42). The correction light reflected by the inner surface 40 of the window 38 passes through the recess 1572 in the window fixture 1568 and through the port 1584a in the fiber fixture 1576. 708, and wander to spectrometer assembly 712. A special way in which correction is performed using this arrangement is handled with respect to the correction module 562 of FIGS. 41-48.

Another embodiment of an apparatus for connection of fiber optic cable ends 1587 (e.g., of fiber optic cable assembly 504, of fiber optic cable 704, of fiber optic cable 708, or of Adapter for alternating current) and fixture assembly (1586). The fixture assembly 1586 generally includes a housing 1588 that can be suitably connected to the processing chamber 36, wherein the opening 1598 of the housing 1588 is at least to some extent (eg, fiber optic cable ends 1587). Are positioned with the window 38 on the chamber. A suitable sealing ring 1592 may be inside or part of this connection. The cable mount 1590 is located in at least a portion of the opening 1508 of the housing 1588 so that the fiber optic end 1597 is actually attached. Appropriate coupling exists between the cable mount 1590 and the housing 1588 such that the cable mount 1590 and the resulting fiber optic cable ends 1587 are at least within a certain operating range (eg, relative to the reference axis 1595). It may move in relation to the housing 1588 through 7 ° in any direction to change the position in the processing chamber where the cable mount 1590 and thereby the appropriate fiber optic end 1587 are connected. Focusing the ends of the fiber optic cable / cable assemblies according to different positions in the chamber 36 is desirable for several reasons. When the cable mount 1590 and the fiber optic cable end 1587 are projected in the desired position, the clamp plate 1596 is screwed to strongly support the cable mount 1590 between the housing 1588 and the clamp plate 1596. 1597 will be connected to the housing 1588.

Calibration module 562-FIGS. 40-48

The correction assembly 552 of Figure 31 and the correction assembly of Figure 37 (both include a correction module 562 shown in Figure 40. This module 562 includes the spectrometer assembly 506 of Figure 31 and Figure 37). Will be used to calibrate the output from each of the spectrometer assemblies 712. For convenience, the discussion will continue only with respect to the spectrometer assembly 507 of Figure 31, but such is also true of the spectrometer assembly 712 of Figure 37. The same may apply.

The output from the spectrometer assembly 506 tends to "drift" throughout the lifetime of the spectrometer assembly 506 due to various factors such as temperature. The drift of the output from the spectrometer assembly 506 will cause wavelength transfer in the spectrum currently being evaluated by the plasma processing module 250. An example of drift may be that a peak at 490 nm wavelength in the spectrum from the processing chamber 474 may appear at 491 nm from the output of the spectrometer assembly 506 due to drift. Moreover, by providing an intensity change in one or more regions of the representative spectrum of the plasma in the treatment chamber 474, the window in the plasma spectrum from the current plasma treatment passing through the window 474 to the spectrometer assembly 506 can be obtained. (478) This may have an effect. Failure to handle both of these conditions will adversely affect the performance of the current plasma processing module 250.

An embodiment of the correction module 562 of FIG. 32 is shown in more detail in FIG. 40, which describes both the aforementioned wavelength transfer and intensity variations. The calibration module 562 is performed at a time determined by the facility using the wafer production system 2 (e.g., once a day, every previous change) and performed without any plasma in the processing chamber 474. Correction routine 564. Instructions will be included in the calibration routine 564 to detect the presence of plasma in the processing chamber 474 in any of the above mentioned manners, and to exit the calibration routine 564 if such plasma is detected. ). Step 568 of the correction routine 564 goes straight to the correction light source 556 to send the correction light to the window 478. Thereafter, step 572 proceeds straight to calibration routine 564 and proceeds to the appropriate calibration subroutine.

The correction subroutine associated with step 572 of FIG. 40 may include the correction subroutine 576 shown in FIG. In general, correction subroutine 576 proceeds to make at least one adjustment with respect to spectrometer assembly 506 to compensate for wavelength transfer associated with the spectral data obtained through window 478. A comparison between the spectrum of the corrected light reflected from the inner surface 482 of the window 478 and the corrected spectrum from the corrected light source 556 connected to the window 478 is performed by step 580 of the correct subroutine 576 and spectrometer Provided in assembly 506. Since there is no plasma in the processing chamber 474 during the calibration, the light received from the spectrometer assembly 506 should be limited to the portion of the correction light reflected by the inner surface 482 of the window 478. Therefore, the condition of the window 478, more specifically, its internal surface, is directly monitored. Any wavelength prior to comparison from step 580 is known in step 584 of this calibration subroutine 576, and adjustments are made in relation to the plasma monitoring assembly 500, and control of the plasma monitoring execution is controlled by the calibration subroutine ( Operation 576 of step 576 will be passed to the start module 202 of FIG.

The comparison between the main spectrum at step 580 of the correction subroutine 576 and the identification of the wavelength transition at step 584 of the subroutine 576 is performed by the following method. The spectrum of corrected light sent to window 478 will be obtained from the corrected light subdirectory 310 of FIG. This spectrum is analyzed to locate the relative wavelength of this intensity peak and to identify the position of one or more intensity peaks in this spectrum. “Peak” may be equal to a portion of the spectrum that has an intensity greater than a predetermined amount (eg, at least 100 units or more) present beyond a predetermined wavelength range (eg, about 2 nm or less). Thus, the above-mentioned analysis of the spectrum of the correction light sent to the window 478 may involve displaying the intensity over at least one portion of this spectrum using appropriate wavelength separation. For example, one or more peaks in this spectrum may identify at least one portion of this spectrum by notification of the spectral intensity of the corrected light from the corrected light subdirectory 310 every 0.5 nm to identify any intensity peak defined above. Can be. After identifying these peaks, it would be beneficial to inform the positioning of relative wavelengths.

The intensity peak in the correction light sent to the window 478 identified by the above mentioned method is "same" intensity level in the portion of the correction light reflected by the inner surface 482 of the window 478, if there is no wavelength transfer. It should appear at the same wavelength (considering some of the principles of optics mentioned below and also presuming that there is no change in intensity due to window 478 mentioned below). Since the intensity and position of one or more peaks are known for the correction light sent to window 478, the degree of wavelength transfer is the same peak at the portion of the correction light reflected by the inner surface 482 of window 478. Can be identified by looking for and by telling the corresponding wavelength. Although the intensity of the peak alone may be sufficient to identify the corresponding peak in the portion of the correction light reflected by the inner surface 482 of the window 478 (eg, by finding the largest peak of the particular wavelength note), In some cases it may be required to locate the relative positions of the identified peaks.

The concept of wavelength transfer processed in relation to the correction subroutine 574 of FIG. 41 is further processed in conjunction with FIGS. 42-43. One embodiment of a spectrum 672 of correction light suitable for identifying wavelength transfer is shown in Figure 42, which correction light is also corrected in Figure 41 by the correction light source 556 of the correction assembly 552 (Figure 31). May be used by subroutine 576. Spectrum 672 is characterized by a plurality of discrete intensity peaks 674 having varying intensities, and in one embodiment include the aforementioned primary correction light source 556a from the mercury light source. Other light sources having this feature can also be used in the same way. "Intensity" is shown along the "y" axis, denoted by "dogs" units reflecting units of intensity, and "wavelength" is shown along the "x" axis, and represented by units of "nm". Figure 42 depicts the actual pattern of correction light sent to window 478 in the main embodiment. 43 shows one embodiment of the spectrum 676 output by the spectrometer assembly 506 due to the reflection of the correction light indicated in FIG. 42 from the inner surface 482 of the "clean" window 478 on the processing chamber 474. (When window 478 has not been exposed to any plasma treatment). Spectrum 676 is characterized by a plurality of peaks 678 having varying intensities, where the "intensity" is also shown along the "y" axis and denoted as "units of units" reflecting units of intensity, Wavelength "is also shown along the" x "axis.

First, a comparison of the spectrum 672 of FIG. 42 with the spectrum 676 of FIG. 43 shows that their respective intensities vary rather than main. This is due to certain optical principles. Generally, the material typically used to form the window 478 reflects about 6% of the correction light going straight relative to the window 478. More specifically, 6% of the correction light sent from the original correction light 556 to the window 478 is reflected by the outer surface 4860 of the window 478 along the axis 494 indicated in FIG. Light will continue through the window 478. When this light meets the inner surface 482 of the window 478, 6% of this light is reflected back to the outer surface 486 by the inner surface and the remainder of this light. 94% will enter the processing chamber 474 (ie, 5.64%) The light reflected by the inner surface 482 again collides with the outer surface 482, reflecting 6% back of the chamber 474. 94% will proceed through the outer surface 486. Thus, only 5.3% of the light initially sent by the correction light source 445 for the correction of the output of the spectrometer assembly 596 is actually the fiber optic cable assembly 504. Will actually enter the internal cable 508 This optical principle describes the difference in intensity between the spectrum 676 of FIG. 43 and the spectrum 672 of FIG. 42 and should be considered in the course of the correction.

To determine if the output from the spectrometer assembly 506 should be corrected due to wavelength shift, the spectrum 676 of FIG. 43 can be compared by the method described above with the spectrum 672 of FIG. Peak 678 of spectrum 676 of FIG. 43 should appear at the same wavelength as the corresponding peak 674 of spectrum 672 of FIG. For example, the peak 678a of FIG. 43 and the peak 674a of FIG. 42 should appear at the same wavelength, the peak 678b of FIG. 43 and the peak 674b of FIG. 42 should appear at the same wavelength, and FIG. 43. Peak 678c and peak 674c in Fig. 42 should appear at the same wavelength and are the same. In the above example, the corresponding peaks from spectra 676 and 672 should be properly aligned or at the same wavelength. Thus, the transfer of wavelength will not be sensed by steps 580 and 564 of the correction subroutine 576 of FIG. Moreover, if no wavelength transfer is identified through the execution of step 584 of the correction subroutine 576, no adjustments are made with respect to the plasma monitoring assembly 500 during the execution of step 588 of the subroutine 576. Do not. Control of the operation of the plasma monitoring is transferred, for example, to the initiation module of FIG. 15 by the execution of step 592 of the subroutine 576.

Having peaks of spectra 672 and 676 at exactly the same wavelength improves the accuracy of current plasma processing module 250. If the limit of wavelength transfer in combination with steps 580 and 584 is "0" and the peak of the spectrum has a very small amount of deviation, then the adjustment with respect to plasma monitoring assembly 500 in step 588 is Thus it will be "a little." However, it is not necessary for the amount of wavelength transfer to initiate the adjustment with respect to the plasma monitoring assembly 500 to be zero. That is, some amount of wavelength transfer may be tolerated before adjustments are made in relation to the plasma monitoring assembly 500 at step 588. For example, in one embodiment no adjustments are made in relation to the plasma monitoring assembly 500 unless there is at least a certain amount of wavelength transfer identified by steps 580 and 584 of the subroutine 576 (eg, For example, a wavelength transfer of at least 0.25 nm is required for the adjustment to take place).

If more than the allowed amount of wavelength transfer is detected at step 584 of the calibration subroutine 576 of FIG. 41, step 588 of the subroutine 576 as described above is adjusted in relation to the plasma monitoring assembly 500. This is provided. There are at least two options for "making adjustments to the plasma monitoring assembly 500". One option is to physically adjust the spectrometer assembly, if the scanning type is. Figure 44 shows one embodiment of such a scanning type spectrometer 516a '. Spectrometer 516a 'includes an apparatus 520 for inputting light from the inner cable 508a of the fiber optic cable assembly 504 to the spectrometer 516a'. Light passing through the device 520 is reflected by the mirror 524 to the diffraction grating 532. Both mirror 524 and diffraction grating 532 will be mounted for pivotal movement by diffraction grating pivot 536 and mirror pivot 528, respectively. The movement of the mirror 524 and the diffraction grating 532 will be affected by the motor 540 and the gearbox 544. Motor 540 will be coupled to PMCU 128 'in operation. The motion of one or more of the mirrors 524 and the diffraction grating 532 may be used so that the peak 678 of the spectrum 676 of FIG. 43 will be appropriately positioned with the corresponding peak 674 of the spectrum 672 of FIG. . Thereafter, the presence of the wavelength shift caused by the spectrometer assembly 506 will not adversely affect the reliability of the nodules provided by the current plasma processing module 250 because the wavelength shift is now reduced.

Another way of making adjustments associated with step 588 of the correction subroutine 576 of Figure 41 is to "reverse" the data by some method. This option is available regardless of what type of spectrometer is used for the spectrometer assembly. Consider the example where the comparison of the spectrum 676 of FIG. 43 with the spectrum 672 of FIG. 42 senses the presence of the wavelength shift (the peaks 674 and 678 are not shown because they are properly positioned). If a solid-state spectrometer assembly 506 is used, it is preferable that in practice multiple spectrometers be used, such as multiple spectrometer 516 as shown in FIG. 33, but only the spectrum transferred by the connected spectrometer 516 The part of needs to be reversed by the above mentioned method.

The information regarding the presence of any wavelength shift identified by the correction subroutine 576 also describes the wavelength shift when comparing the spectra from the plasma spectral directory 284 with the spectrum from the current plasma processing run. The pattern recognition module 370 of FIG. 13 will also be input to the current plasma processing module 250. Consider the case where the 200 nm wavelength of the current spectrum from the processing chamber 474 is calculated and the wavelength shift of 1 nm is identified by the correction assembly 552 at the 200 nm wavelength. Comparing the spectrum in the plasma spectral directory 284 with this datapie, the 1 nm wavelength transfer at 200 nm wavelength is input to the pattern recognition module 370, and whether the two intensities are within the intensity matching range of the pattern recognition module 370. In this case, we actually look at 201 nm of the spectrum. Thus, the presence of wavelength transfer will not adversely affect the reliability of the results provided by the current plasma processing module 250 of FIG.

The correction assembly 552 of FIG. 31 compensates for the output from the spectrometer assembly 506 when there is a change in intensity in the plasma spectrum in the processing chamber 474 (including the correction module 574 of FIG. 40). May be used. The change in intensity in the spectrum is typically due to the "aging" of window 478. As used herein, “aging” of the window 478 means that the plasma processing performed in the processing chamber 474 affects the inner surface 482 of the window 478 in any way (eg, internal By staining the surface 482, by etching the inner surface 482, by a combination of etching the inner surface 482 and forming a stain thereon). Often these blobs reduce the intensity of light from chamber 474 that passes through window 478 and goes straight to spectrometer assembly 516 (FIG. 31). In this case, failure to account for timing changes in the spectrum due to window 478 would adversely affect the reliability of the results currently provided by plasma processing module 250. The pattern recognition subroutine 374 of FIG. 13 subjected to detailed analysis and intensity used by the pattern recognition module 370 to compare the current spectrum pattern with the spectrum in the plasma spectral directory 284 (FIG. 9). Consider the case where the "matching range" is limited to 10% (percent difference). Suppose that a stain is formed on the inner surface 482 of the window 478 and thus the intensity of light emitted through the window 478 is reduced by 30%. In this case, even if the plasma in the processing chamber 474 is healthy, the light emitted through the window 478 will be only 70% of the actual plasma intensity inside the chamber 474. Thus, even if the plasma is actually healthy, the pattern recognition subroutine 374 will recognize that the current spectrum does not "match" any spectrum in the appropriate subdirectory of the plasma spectrum directory 284 (in that spectrum). Since the "matching range" of the corresponding wavelength of is in the 10% range, and also because the window stain reduces the light intensity from the chamber 474 by 30%). Thus, "false negative" will be notified by the pattern recognition subroutine 374 and the current plasma processing module 250.

The correction module 574 of FIG. 40 is generally emitted through the window 478 and thus has a correction subroutine that is connected to make adjustments to account for the above mentioned type of intensity change in the spectrum of the plasma in the chamber 474. Includes too. One embodiment of such a subroutine is shown in FIG. 45 in the form of a correction subroutine 600. There is no plasma in chamber 474 during execution of calibration subroutine 600 or at least during data reception. Moreover, the detection of plasma matching the above automatically terminates the operation of the correction via the subroutine 600. Finally, the subroutine 600 will be performed on a periodic basis created by the operation of the facility using the wafer production system 2 (eg, daily).

In step 604 of the correction subroutine 600, the correction light spectrum from the correction light source 556 and the internal surface 482 of the window 478 can go straight to the window 478 and be stored in the correction light spectrum subdirectory 310 A comparison of the portion of the corrected light that is reflected proceeds and is provided to the spectrometer assembly 506. Since there is no plasma in the chamber 474, it should be limited to the portion of the correction light reflected by the inner surface of the window 478 provided to the spectrometer assembly 506. Thus, the calibration subroutine 600 monitors and evaluates the conditions of this portion of the window 478 that may actually be adversely affected by the plasma processing performed in the chamber 474.

The comparison of the major spectra at step 604 of the calibration subroutine 600 will be performed in the following manner. The spectrum of correction light sent to window 478 will be obtained from correction light subdirectory 310 of FIG. The intensity peaks will be identified by the above-mentioned method with respect to the correction subroutine 576 of Fig. 41, and will be able to locate their relative wavelengths. In the portion of the correction light reflected by the inner surface 482 of the window 478, these same peaks will appear in the same wavelength range (considering the optical principle) at the same wavelength (presumably no wavelength transfer). Since the intensity and position of the correction light is sent to the window 478 or more is sensed, the amount of intensity change finds the same peak in the portion of the correction light reflected by the inner surface 482 of the window 478, The intensity change is easily identified by the notification. Identifying the corresponding peak in the portion of the correction light reflected by the inner surface 482 of the window 478 is sufficient only by the intensity of the peak (by finding the largest peak at a particular wavelength), but in some cases the It is required to determine the relative position.

The concept of intensity change processed with respect to the correction subroutine of FIG. 45 is further processed in connection with FIGS. 46A and 47A. One embodiment of the spectrum 682 of corrected light is shown in FIG. 46A (e.g., mercury lamp or other similar corrected light source identified by wavelengths from about 200 nm to about 1,000 nm), and the corrected light is a correction assembly ( 552 (FIG. 31) or may be used as a correction subroutine 600 (FIG. 45) to identify intensity transfer. Spectrum 682 of FIG. 46A is characterized by a plurality of discrete intensity peaks 686 of varying intensity. "Intensity" is shown along the "y" axis and is represented by "count" reflecting the level of intensity, and "wavelength" is shown along the "x" axis and is expressed in nm. 46A depicts a pattern of actual light that is sent to window 478 in the main example and also when window 478 is exposed to multiple plasma processes (eg, “aged” window 478). One embodiment of the spectra 690 output by the spectrometer assembly 506 is shown in FIG. 47A after taking into account the above mentioned optical principles, which shows the internal surface of the aged window 478 on the processing chamber 474. Representative of the correction light portion reflected from 482. Spectrum 690 is characterized by a plurality of discrete peaks 694 of varying intensities, wherein the "intensity" is also shown along the "y" axis and is represented by "count" reflecting the level of intensity, and "wavelength" Is shown along the "x" axis of the nm unit.

The spectrum 690 of FIG. 47A will be compared to the spectrum 682 of FIG. 46A to determine if a correction for the intensity change by the aged window 478 is needed. This comparison is again performed at step 604 of the calibration subroutine 600 of FIG. The peak of the spectrum 690 of FIG. 47A corresponds to the peak 686 of the spectrum 682 of FIG. 46A, as mentioned above in connection with correcting the output of the same wavelength (spectral assembly 506 for wavelength transfer). As well as at the same level of intensity). For example, the peak 694a of FIG. 47A and the peak 686a of FIG. 46A are in the same intensity range, and the peak 694b of FIG. 47A and the peak 686b of FIG. 46A are in the same intensity range from FIG. 47A. The peak 694c and the peak 686c in Fig. 46A should appear in the same intensity range, and so forth. But this is not the case.

Peak 694a in FIG. 47A has an intensity (about 9300) that is substantially the same as the corresponding peak in FIG. 46A, that is, peak 686a. However, the peak 694b of spectrum 690 in FIG. 47A has an intensity of about 5,100, while the corresponding peak of spectrum 682 in FIG. 46A, i.e., peak 686b, has an intensity of about 11,100. That is, in the wavelength region of about 450 nm, the intensity decreased by about 6000 or by 54%. Moreover, the peak 694c of the spectrum 690 in FIG. 47A has an intensity of about 9,600, while the corresponding peak in the spectrum 682 of FIG. 46A, that is, the peak 686c, has an intensity of 12,000. That is, in the wavelength region of 760 nm, there was an intensity decrease of about 2,400 or a decrease of 20%. Thus, the window 478 does not have the same damping effect throughout the spectrum obtained through the window 478. Instead, the comparison of the pattern by the method is that it showed at least the first reduction in a portion of the spectrum (eg 450 nm region) and a second reduction in another portion of the spectrum (eg 760 nm region). Has been identified. Step 612 of the calibration subroutine 600 will make at least one adjustment with respect to the plasma monitoring assembly 500 to account for this type of intensity change, after which control of the calibration subroutine 600 of FIG. Step 614 will proceed to the initiation module 202 of FIG.

The adjustments associated with step 612 of correction subroutine 572 generally include spectrum 690 of FIG. 47A (correction light reflected by inner surface 482 of window 478). 556) to normalize the correction light sent to window 478). One way to "normalize" data is to "fit by regression." This option can be used regardless of what type of spectrometer is used for the spectrometer assembly 506, so it is available for both solid-state spectrometers and scanning type spectrometers. Another way to characterize the main adjustment is through the concept of correction factors or gain. If there is a "constant" intensity change, a correction factor or gain will be applied to the optical emission data collected on the current plasma process. Multiple reduction effects identified as described above will be handled through multiple correction factors or gains. One or more portions of the spectrum of reflected light will require the application of one correction factor or a corresponding gain, while one or more principal spectra will require another correction factor or a corresponding gain. Finally, the spectrometer assembly 506 will in some cases be adjusted to obtain more light, although not as desirable as described above.

Consider a case where a comparison between the spectrum 690 of FIG. 47A and the spectrum 682 of FIG. 46A detects the presence of a change in intensity. The output from the spectrometer assembly 506 will be adjusted by regression to account for the sensed intensity change. Optionally, in order to account for intensity changes when comparing the spectra in the plasma spectral directory 284 with the spectra from the current plasma treatment, information about the presence of this intensity change is present in the current plasma processing module 250, in more detail. For example, the pattern recognition module 370 of FIG. 13 may be input.

The limitation is useful for adjustments made in connection with the plasma monitoring assembly 500 by the calibration subroutines referred to herein. For example, if a certain amount of correction or gain is required to handle an intensity change beyond the initial range, window 478 may affect the accuracy of the results provided by plasma monitoring assembly 500 to an undesired degree. This message of age or deterioration will be shown to the right person. Alternatively, an excess of this initial range may actually render the plasma monitoring assembly 500 ineffective, so that the indicator may be provided to the operator. Limits greater than the initial limits described above may be imposed, resulting in neutralization of the plasma monitoring assembly 500 (i.e. warn when the first limit is exceeded and when the second high limit is exceeded). Neutralized).

The correction light shown in Fig. 46A and mentioned above has a plurality of separate intensity peaks. Thus, only 31 data points can be evaluated by the subroutine 600 of Figure 45 (i.e. there is only a peak 31) to recognize the effect that the window 478 has on the optical emission passing through it. The rest is actually noise). Estimates should be made of the effect that window 478 has optical emission at such wavelengths between these peaks. One embodiment of the correction light that can be used by the correction subroutine 600 (FIG. 45) and the correction light source 556 (FIG. 31) for identifying the intensity transfer that alleviates the need for this type of estimation is shown in FIG. 46B. It was. The correction light of FIG. 46B is different from that shown in FIG. 46A in that the correction light of FIG. 46B is shown as a continuum of intensity while the correction light of FIG. 46A has a plurality of separate intensity peaks. This light will be the second form used by the secondary correction light source 556b mentioned above. In one embodiment, the correction light for identifying the intensity change is a white light source that appears at a wavelength that includes at least the desired optical bandwidth. Thus, the correction light source 556 may actually include the form of a light source for identifying the wavelength transfer (e.g., Figure 42 / 46a), or may use another light source for identifying the intensity transfer (e.g., Figure 46b).

Correction reflected by spectrum 666 of FIG. 46B (corrected light sent to window 478) and spectrum 670 of FIG. 47B (inner surface 482 of window 478) provided to spectrometer assembly 506. Comparison with the portion of light) may be made in the manner mentioned above in connection with FIGS. 46A and 47A. However, a more complete "description" of the behavior of the window 478 is provided by using correction light with intensity continuity, which is in fact a spectrum with multiple intensity peaks with "noise" in between. This is because there are more data points useful for comparison than in the case of (e.g., Figure 42 / 46a). Moreover, the comparison of the spectrum 666 of FIG. 46B and the spectrum 670 of FIG. 47B indicates how the window 478 has different effects in different parts of the spectrum. The shapes of the spectra 666 and 670 are generally the same between about 200 nm and 575 nm despite having different intensities, but the shapes of the spectra 666 and 670 between wavelengths of about 575 nm and 950 nm Note that it is different. In particular, the profile of the spectrum 670 of FIG. 47B between wavelengths of about 575 nm and 950 nm is more “flat” than that portion of spectrum 666 of FIG. 46B. Thus, window 478 generally has one type of optical emission effect between about 200 nm and 575 nm wavelength range, and generally has another effect between about 575 nm and 900 nm wavelength range.

Another embodiment of a correction subroutine that can be used by the correction module 574 of FIG. 40 is shown in FIG. Correction subroutine 616 may identify whether window 478 has another reduction effect on other portions of the spectral data emitted through window 478. Moreover, subroutine 616 may also identify cases where other portions of the spectral data emitted through window 478 have not yet been fully filtered. Preferably, correction subroutine 616 uses a light source with continuity of intensity, such as the light source depicted in Figure 46B, to provide this function.

Referring now to FIG. 48, the correction subroutine 616 initiates step 620, for the purposes of the spectrum of correction light sent by the correction light source 556 to the window 478 (hereafter subroutine 616). Spectrum of the portion of the correction light reflected by the " reference spectrum " (e.g., Figure 46b) and the inner surface 482 of the window 478 (hereafter "reflection spectrum" (For example, FIG. 47B) to initialize. Any “change” in intensity between the reference spectrum and the reflection spectrum will be known at step 624 of the correction subroutine 616. Steps 620 and 624 may use the same type of logic represented by steps 604 and 608 of the calibration subroutine 600 of FIG. 45 and steps 580 and 584 of the calibration subroutine 576 of FIG. 41. have. The " change " in the reference intensity at step 624 of the correction subroutine 616 of FIG. 48 is the " match range " or the range of intended tolerances mentioned above in connection with the pattern recognition module 370 of FIG. Will be. That is, if each "point" of the reflection spectrum is within the "matching range" of the corresponding "point" in the reference spectrum, the correction subroutine 616 will proceed to step 628. Assembly 500 recognizes that calibration of plasma monitoring assembly 500 is not required and control will proceed to initiation module 202 of FIG.

If there is a "change" between the reference spectrum and the reflection spectrum (for example, a detailed analysis shows that the reference spectrum and reflection spectrum are out of "match range" at one or more points when compared), the correction subroutine ( 616 may proceed from step 624 to step 632. Step 632 analyzes how the reflection spectrum differs from the reference spectrum in relation to the corresponding intensity reference. If there is a " uniform " intensity change in the reflection spectrum with respect to the reference spectrum, the correction subroutine 616 proceeds to step 636 where a single correction factor or uniform augmentation is applied to the entirety of the reflection spectrum to ensure that it is identical to the reference spectrum. "Standardize." Control transfers to beginning C of FIG. 15 through step 640 of correction subroutine 616. "Uniform" with respect to step 632 of the correction subroutine 616 need not be limited to a fixed number of intensity units (e.g., the entirety of the reflection spectrum differs from the entirety of the reference spectrum by the same amount). Need not be)), instead, the actual difference, percent difference, or a combination thereof may be used as "match range" as the term used in connection with the pattern recognition module 370 of FIG. For example, any change in intensity between each wavelength in the reflection spectrum that is within ± 5% of the intensity of the corresponding wavelength in the reference spectrum is "uniform" for the purpose of step 632 of the correction subroutine 616. "Can be considered a change in intensity.

If the comparison between the reference spectrum and the reflection spectrum at step 632 of the correction subroutine 616 does not recognize that there is a "uniform" intensity change in the reflection spectrum with respect to the reference spectrum, then the subroutine 616 proceeds to step 632 And proceeds to step 644. Generally, step 644 will determine if there is evidence of complete filtration of data over a wavelength range in the reflection spectrum. In some conditions, the inner surface 482 of the window 478 will be affected such that light emission over a certain wavelength range will be completely blocked (e.g., the window 478 will be relatively inclusive, including a range of intensities). At low intensities, it will become opaque beyond the wavelength range, which is evident by the actual horizontal line in the spectrum. Although opaque for optical emission over a wavelength range of about 300-400 nm, the transparent window 478 may be an example at some other wavelength of light collected and provided to the spectrometer assembly 506 (FIG. 31). .

As mentioned herein, any “complete filtration” of any wavelength range in the reflection spectrum will advance calibration subroutine 616 from step 644 to step 648. The data in the fully filtered area is ignored in any analysis provided by the current plasma processing module 250 of FIG. 32 as shown in step 648 of the calibration subroutine 616. Moreover, at least two different correction factors are applied to other portions of the remaining data in the reflection spectrum as described in the same step 648, or the reflection spectrum is normalized to a reference spectrum beyond the unfiltered portion. Since the intensity change in the reflection spectrum with respect to the reference spectrum was "non-uniform" in step 632 of subroutine 616, the application of a single correction factor to the reflection spectrum is in this case the reflection spectrum relative to the reference spectrum. Recall that it turns out to be unsuitable for "standardizing."

As described above, an analysis of any plasma treatment is then performed so that the analysis by the current plasma processing module 250 will be limited to only the portion of the desired optical emission data. Data in the wavelength region completely filtered by the window 478 is ignored. Thus, correction subroutine 616 will be programmed to proceed from step 648 to process alarm module 428 of FIG. One or more alerts will be generated via the process alert subroutine 432. For example, it is appropriate to inform the operator at the time that window 478 is to be aged and exchanged, and further execution of the current plasma processing module 250 since certain data from the current plasma processing will be ignored in the comparative analysis. The result by will give inaccurate results. Optionally, if the wafer production system 2 is required by the operator of the failing device, exiting the condition of "yes" in step 644 of the calibration subroutine 616 will result in all the additional plasma until the window 478 is replaced. Processing operations can be called (not shown).

Without complete filtration of the data in the reflection spectrum, control of the correction subroutine 616 of FIG. 48 will proceed from step 644 to step 656. Correction of the reflection spectrum following step 56 involves the application of a plurality of gains or two or more other corrections through the reflection spectrum or optionally standardization as mentioned above. Recall that the change in intensity in the reflection spectrum with respect to the reference spectrum is not uniform, so applying a single correction factor proves to be unsuitable to "normalize" the reflection spectrum to the reference spectrum. In the case of step 656, one correction factor will be applied to the reflection spectrum in the wavelength region from 200 nm to 500 nm, while the other correction factor will be applied to the reflection spectrum in the wavelength region of 501-900 nm. The correction subroutine 616 then exits from step 656 to step 660, and control will transfer to the initiation module 202 of FIG.

The correction subroutine 616 of FIG. 48 is specified by monitoring the window 478 based on these results to determine how subsequent plasma processing is evaluated. If monitoring of the condition of the window 478 through the subroutine 616 proves that there is no significant reduction or slight reduction in optical emission from the chamber 474 through the window 478 and there is no complete filtration The calibration subroutine 616 defines that plasmagamma operation is progressing normally by comparing the spectra in the plasma spectral directory 284 with the "standardized" output from the spectrometer assembly 506. Other evaluation techniques are provided where the slight savings in optical emission from the chamber 474 through the window 478 and the complete filtering of the spectral data over a particular wavelength range are identified by the performance of the correction subroutine 616. Instructs it to be used. In particular, some of the desired data is ignored in the analysis.

Search module 1300-FIGS. 49-51c and 62-63

All of the assessments described so far with respect to the current plasma processing module 250 of FIGS. 7-32 relate to one or another method for the "state" of plasma processing. Another form of assessment currently available through plasma processing module 250 relates to the endpoint of plasma processing or portions thereof. Each step of plasma cleaning, controlled wafer operation, and plasma processing (whether performed on a limited wafer 18 or fabrication wafer 18) may be reflected in the optical emission of the plasma in the chamber 36 and thereby "end point" Will have an endpoint associated with it that can be used to call "when the intended / predicted result is achieved such as complete removal of the material layer in the plasma etch." The following describes an end point for the plasma step of the plasma process performed on the fabrication wafer 18, although equally applicable to any plasma process having more than one end point.

One method of identifying an endpoint through the current plasma processing module 250 for a given plasma step requires that the same analysis be performed with at least one pre-execution of the same plasma step in the same processing chamber 36. In this regard, the current plasma processing module 250 includes a search module 1300, shown in FIG. 49 and its submodule. The retrieval module 1300 is executed to identify that the characteristics of the optical emission of the plasma in the processing chamber 36 can indicate the end point of the main plasma step and to identify the occurrence of the end point of the main plasma step. 32 includes a search subroutine 1478 that can be used by endpoint detection module 1200.

The retrieval module 1300 can be accessed through the startup module 202 of FIG. 15 by execution of steps 144 and 148. The search subroutine 1478 of FIG. 49 identifies optical emission data of plasma in a chamber that can be set up to evaluate multiple executions of the same plasma step and can be used to call an endpoint. Some information about the endpoint can be obtained by finding the optical emission data from only a single run. The search subroutine 1478 of Figure 49 does not necessarily require some knowledge of the plasma step, such as a time estimate of the length of time required to reach the end point of the plasma step. In one embodiment, this conventional knowledge can be used so that optical emission data can be obtained on the plasma stage at the point of time including this endpoint. In this regard, a time estimate t _e for completing the main plasma step (reaching the end point) is input to the subroutine 1478 by execution of step 1480. This time estimate for reaching the end point will be calculated based on, for example, knowing the thickness of the layer to be etched more and the etch rate of the main treatment. Another method of identifying the time associated with the main endpoint is to use data on current plasma processing (eg, via preferred optical bandwidth and desired data resolution). At times there is a significant change in the above-mentioned sum between two suitably adjacent optical emissions which may represent an endpoint generated at that time.

Step 1490 of the subroutine 1478 performs the loading of the product into the processing chamber 36, and step 1482 is followed by the introduction of plasma into the processing chamber 36 under conditions suitable for the plasma step to initiate the desired plasma step. Perform what is disclosed. The optical emission of the plasma in the processing chamber 36 during the plasma phase is preferably subroutine 1478 at the current time t _c for the subroutine 1478 through the execution of step 1484 using the optical bandwidth desired in the data resolution. Obtained for. Adjustment of "clock" of subroutine 1478 occurs at step 1486 where the current time t _c is increased by an increment of "n". Preferably, "n" is set at the desired data collection time resolution. If the current current time t _c is less than the preset value for time estimate t _e , then step 1488 of subroutine 1478 causes subroutine 1478 to exit step 1488 and repeat as described above. Return to step 1484. Although the "preset value" cited in step 1488 may be a time estimate t _e from step 1480, a larger value is obtained to ensure that optical emission data is obtained over time when the end point of the plasma step is actually reached. It is preferable to use. Another method of characterizing the above is that optical emission data is recorded until the plasma can be performed in chamber 36 to identify one or more wavelengths that may represent an endpoint.

Steps 1484, 1486, and 1488 of the retrieval subroutine 1478 relate to obtaining optical emission data of the entirety of the main plasma step within the desired data collection bandwidth, at the desired data resolution, and at the desired data collection time resolution. This data can be analyzed at this time to identify the characteristics of the optical emission data representing the indicator of the endpoint. However, data is obtained as described above in multiple executions of the same plasma step in the same processing chamber 36. This is done through the execution of step 1492 of subroutine 1478 which is directed to repeating for the desired amount (at least 2 runs) of the execution of the plasma step. Once the desired amount of data is obtained (the desired number of executions), the data is analyzed through execution of step 1496 of search subroutine 1478 to identify optical emission data or portions thereof that can be used as indicators of endpoints. This analysis is currently done passively.

The analysis cited in step 1496 of search subroutine 1478 identifies optical emission lines (eg, individual wavelengths) that experience some form of recognizable change at the time that the endpoint of the plasma step is assumed to occur. It may be about. One form of change that makes a particular wavelength possible to be an indicator of an endpoint is illustrated by a review of the optical emission data shown in FIGS. 50A-C. Each of these figures shows a plot of intensity versus time over time including the end point of the main plasma step for three specific wavelengths lambda _1, lambda _2, lambda _3. Plots were generated from optical emission data obtained from one execution of the main plasma step on wafer 18 in processing chamber 36. Preferably, this type of plot is obtained for each wavelength of light obtained based on the optical resolution used to collect the optical emission data.

Examination of FIG. 50A for the wavelength lambda _1 from the first implementation of the plasma stage indicates that there is no actually recognizable change at any time during the plasma stage. That is, the line for the wavelength lambda _1 is at least nearly horizontal in FIG. 50A. However, the plot for wavelength lambda _2 in FIG. 50B shows two specific changes in its emission line. One change occurs at about 15 seconds, while the other change occurs at about 40 seconds. The plot for the wavelength lambda _3 in FIG. 50c has two specific changes in its emission line. One change occurs at about 20 seconds, and the other change occurs at about 40 seconds. Therefore, even if the wavelength lambda _1 is excluded when it does not represent an end point for the main phase because there is no particular change in its entire radiation line during the relevant time period, the wavelength lambda _2 and the wavelength lambda _3 are at least in their respective radiation line. Because each has one specific change, it can be an endpoint indicator.

Having some knowledge of the plasma step, such as the time estimate of its endpoint, can remove some of the wavelengths of the data obtained on the main plasma process and some of the changes occur in a particular wavelength or plot for both wavelengths. For example, if the time estimate for reaching the end point of the main plasma stage is about 40 seconds,

Changes that occur at 15 and 20 second time intervals in the intensity versus time plots for wavelength lambda _2 and wavelength lambda _3 can be eliminated due to temporal intervals from the time estimates for the endpoints. However, both wavelength lambda _2 and wavelength lambda _3 can be indicators of the endpoint because of changes in their respective plots at about 40 seconds. In other executions of the plasma step in the same processing chamber 36 no definitive determination is made at this point without obtaining additional data on the nature of the data. Although all changes in plasma can be ignored with regard to the construction of endpoint indicators, they are important and should be noted for monitoring plasma status.

51A-C show optical emission data for the same wavelength lambda _1, lambda _2, lambda _3 from different implementations of the same plasma step in FIG. 50A-C but in the same processing chamber 36. The plot for wavelength lambda _1 in FIG. 51 a shows that no endpoint can be derived from this wavelength lambda _1. The plot for the wavelength lambda _2 in FIG. 51B is at least identical to that shown in FIG. 50B. Two specific changes in this spinning line may be due to some change in processing, for example opening and closing of the valve. Although the plot for wavelength lambda _3 in FIG. 51C has the same general pattern, two specific changes occur about 5 seconds later than did in the implementation shown in FIG. 50C. This indicates that the wavelength lambda _3 reflects the end point of the main plasma stage where the end point may vary by some acceptable time difference.

Summarizing the foregoing, the wavelengths experiencing a change corresponding to the end point of the main step can be identified by comparing plots of various wavelengths per run and identifying patterns that have the same but different form of change per run. For example, this change may be one or more of temporary movement, intensity movement, expansion of the pattern, and reduction of the pattern. These types of changes can be attributed to factors that vary from run to run, such as the thickness of the layer processed by the plasma step, which can cause temporary movement. Therefore, one way of identifying a particular wavelength indicative of an endpoint is to implement the same plasma step for a plurality of products each having a layer of different thickness to be etched so that the time at which the endpoint occurs will vary. Wavelengths with a change indicative of the end point are wavelengths in which the main change (“approximately” end point) moves in time.

If a wavelength change potentially indicating an endpoint is identified through the search module 1300, the endpoint detection technique is required to use this information to identify the endpoint. One such technique requires defining the pattern of the portion of the plot of time versus intensity over the main wavelength until a change is made to indicate the endpoint. The definition of this part of the plot can be through an equation or a function (eg, a linear function, first-order polynomial, second-order polynomial). The end point will then be considered to be reached for subsequent execution of the same plasma step if the corresponding wavelength no longer fits the equation or function. Another option is to take the first or second derivative of this function to identify the slope of the resulting line. The change in slope over time of the current optical emission data can be plotted. The endpoint will be called if this plot deviates by more than a predetermined amount from that identified by the primary or secondary derivative of the main function.

There are other ways to characterize in different forms the wavelength that the endpoint has reached from the optical emission data collected on the current plasma process. The optical emission data obtained for the search subroutine 1478, in particular the plot of intensity versus time, will be examined to identify peaks that change during processing and reach steady state at the time the endpoint occurs. Moreover, these plots will be examined to identify peaks that remain steady for processing and begin to change at the time the endpoint occurs. This small subset of operations involves the appearance of a new wavelength or a decrease in wavelength relative to the background at the time that the endpoint is expected to occur.

The endpoint of the plasma treatment or its discrete portions may be apparent in one or more wavelength ranges. Search should be taken to identify what particular wavelength range appears in some way at the main endpoint. An embodiment of a suitable subroutine of search module 1300 to affect this particular function is shown in FIG. Search subroutine 1650 begins at step 1652 where one or more endpoint evaluation wavelength regions are selected. That is, more than one wavelength region is selected for the investigation to determine when it is possible for the same to represent the main endpoint. In use, a larger optical emission data segment is collected during the current plasma processing, and the virtual filter type is selected in the subset of optical to evaluate only a portion of this data to call the endpoint in the manner described in detail below with respect to FIG. It will be used by the endpoint module 1200 to focus on the emission data. Therefore, it is easy to use an entirely different wavelength region to call an end point in another plasma treatment because one wavelength region is used to call an end point in one plasma treatment, and the same optics are used in each case. (Ie, the physical filter does not need to create the wavelength region used to call the endpoint in this case).

One way to select an endpoint evaluation wavelength region is to identify the search bandwidth to be used to examine a plurality of endpoint evaluation wavelength regions over a larger wavelength region (ie, to find one or more wavelength regions with larger bandwidths). . For example, the search bandwidth may be selected as 5 nanometers, and the endpoint evaluation wavelength region will be evaluated over the entire desired optical bandwidth, which is data collected from any given plasma process. As noted above, preferred optical bandwidths include wavelengths of at least about 250-1000 nanometers. Therefore, the first endpoint wavelength range is 150-155 nanometers, the second endpoint wavelength range is 155-160 nanometers, the third endpoint wavelength range is 160-165 nanometers and continues until the upper limit is reached. . The selected endpoint evaluation wavelength regions need not overlap, but can be done in the manner described above or arranged in an end-to-end manner.

The search subroutine 1650 of FIG. 62 continues to step 1654 where the product is loaded into the processing chamber 36. Since the endpoint is called in processes executed in the processing chamber when no product is present, step 1654 can be relaxed if a search is made to identify the endpoint wavelength region for these types of processing. Nonetheless, plasma processing is performed as indicated by step 1656 of search subroutine 1650. Optical emission data is obtained as indicated by step 1658 over the entire plasma process, more particularly using the desired optical bandwidth, the desired data resolution, and the desired collection time resolution.

Some plots are generated as indicated by steps 1660 and 1662 of search subroutine 1650 in FIG. 62 based on the optical emission data collected from the main plasma process. Step 1658 indicates that a plot of endpoint rating wavelength range versus time is generated for each endpoint rating wavelength region over all or a portion of the main plasma process (ie, at one data point on the plot referenced by step 1658). Determine / calculate the area under the particular pattern of the major endpoint evaluation wavelength region at time t ₁ , and determine the area under the specific pattern of the major endpoint evaluation wavelength region at time t ₂ for another data point on the plot referenced by step 1658. / Calculate). The change in the region over time is plotted for each endpoint evaluation wavelength region as indicated by step 1662.

The endpoint may be indicated by the presence of some identifiable event, change, or condition in one or more plots that are the subject of step 1662. In this regard, if step 1664 of search subroutine 1650 has only a meaningless change throughout the plot from step 1662, the endpoint evaluation wavelength region corresponding to this particular plot is discarded considering the endpoint evaluation wavelength candidates. Means that the plot is effectively a horizontal line. Conversely, if the plot of step 1662 for a certain endpoint assessment wavelength region has any discernible event, change, or at least some significant condition, then the corresponding endpoint assessment wavelength region may identify some endpoints associated with the main plasma treatment. Can be represented. The selection of the wavelength region candidate from the plot of step 1662 of the search subroutine 1650 of FIG. 62 is represented by the plots shown in FIGS. 63A-H. Each search wavelength region in Figures 63A-H has a 5 nanometer bandwidth and is within the desired optical bandwidth. The endpoint evaluation wavelength region 1690 of FIG. 63A, the endpoint evaluation wavelength region 1693 of FIG. 63D, the endpoint evaluation wavelength region 1695 of FIG. 63F, and the endpoint evaluation wavelength region 1697 of FIG. Have a plot 1698 of time versus area change that is not deviated by more than a predetermined amount (eg, using raw differences, percent difference basis, or both as described herein) or substantially horizontal. This may be used to define “meaningless” for the purpose of step 1664 of the search subroutine 1650, whereby endpoint evaluation wavelength regions 1690, 1693, 1695, and 1697 are shown in search subroutine 1650 in FIG. Through step 1654, it will not be considered or discarded as an endpoint indicator. Conversely, endpoint evaluation wavelength ranges 1701, 1692, 1694 and 1696 have plots 1698 that exceed this tolerance and are therefore subject to main plasma processing through step 1666 of search subroutine 1650 in FIG. 62. Some associated endpoints (eg, endpoint indicator candidates) may be indicated. The endpoint evaluation wavelength region 1701 of FIG. 63B and the endpoint evaluation wavelength region 1694 of FIG. 63E have a plot 1698 of the change of the region over time that defines a bell curve centered at time t ₁ . The endpoint evaluation wavelength region 1662 of FIG. 63C initially has a plot 1698 of time versus region change, which initially proceeds at least horizontally and suddenly spikes up at time t ₁ , and then proceeds again at least horizontally. The endpoint evaluation wavelength region 1696 of FIG. 63G initially plots a plot 1698 of time versus region change, initially progressing at least horizontally, gradually rising to a higher level at time t ₂ , and then proceeding abruptly in a horizontal manner. Have

All endpoint evaluation wavelength regions with conditions in the corresponding plot of identifiable or meaningful events, changes, or changes in time vs. region need not necessarily be suitable endpoint indicators. Within a certain time (eg within 20 seconds) of the plasma in the processing chamber 36, within a certain time (eg within 10 seconds) of the plasma being performed within the processing chamber 36, and from one plasma treatment to another. If there is a significant change in the plot of time versus area change over a particular endpoint evaluation wavelength region that occurred before a furnace or within a certain time of processing change (eg within 10 seconds), then the particular endpoint wavelength region is actually It will not indicate the end point of the type. Any plot of the time-domain change outside of these limits means that their respective endpoint evaluation wavelength ranges indicate an endpoint. However, the significant change should at least match the time at which any endpoint associated with the main process occurs. Each endpoint evaluation wavelength region having a plot of time versus region meeting these additional criteria can be used to call the endpoint of the main plasma process individually or in combination.

What is meant by "individually" and "in combination" may be explained by way of example. The two endpoint evaluation wavelength regions from the search subroutine 1650 of FIG. 62 have significant events in the time-domain change plot of 65 seconds into the plasma process, which is assumed to be related to the time at which the endpoint should occur. "Individually" means that one or both of these search wavelength ranges can be used to call an endpoint in the manner described above. “In combination” may be defined such that if these two search wavelength regions are sufficiently close (eg, within 15 nanometers of each other), the wavelength region used to invoke the endpoint may include both of these endpoint evaluation wavelength regions. (For example, if one endpoint wavelength region is 200-205 nanometers and the other endpoint assessment wavelength region is 210-215 nanometers, each at a time having a "significant event" required for the relevant time period into the plasma process. With a plot of region change according to the endpoint wavelength region may be selected as 200-215 nanometers).

Endpoint Detection Module 1200-FIGS. 52-58 and 64

The actual detection of the end point of the plasma process (eg, plasma cleaning, controlled wafer operation) or its discrete portion (eg, one or more steps of the plasma process; all steps of the multistage plasma process) is shown in FIGS. In more detail through the use of the plasma processing module 250 is implemented through the endpoint detection module 1200. Some initial comments are guaranteed on module 1200. Initially, endpoint detection module 1200 may be used to identify endpoints of plasma processing having only a single endpoint. Multi-stage plasma processing with corresponding plurality of endpoints may be evaluated through endpoint detection module 1200. Two or more plasma steps during the multistage plasma processing may have respective endpoints identified through endpoint detection module 1200. All steps of the multi-step plasma processing with endpoints may be identified through endpoint detection module 1200, respectively.

Multiple techniques may be used simultaneously by the endpoint detection circuit 1200 to identify the occurrence of an endpoint of plasma processing or portions thereof. One way this can be done is to call an endpoint and use two or more different endpoint detection techniques if either of these techniques identifies a primary endpoint. The difference in this context means that the techniques themselves are different and the data is not just used by the techniques. Another way this can be done is to call the endpoint and use two or more endpoint detection techniques if at least two of these techniques identify the primary endpoint. This option provides a more "strong" endpoint detector by highlighting the fact that the endpoint is actually properly identified (eg, statistically more confident that the endpoint has occurred).

The endpoint detection module 1200 may interface with the process alert module 428 of FIG. 14. For example, if an endpoint is identified through endpoint detection module 1200, information about the endpoint condition may be provided to appropriate members via the "alarm" function of process alert subroutine 432 of FIG. Control of the plasma processing regarding the identification of the endpoint via the endpoint detection module 1200 may be effected through the "process control" function of the process alert subroutine 432. The identification of the endpoint through module 1200 terminates the current plasma process or more, and via the process alert subroutine 432 and in the manner described above, the next feature of the current plasma process (eg, the next plasma step). ) Can be used to initiate.

Preferably, the current plasma process is evaluated in relation to that state (ie, the plasma state according to the plasma state module 252 mentioned above) and via the endpoint detection module 1200. Although it is advantageous to monitor the status of plasma processing throughout (except for its initial portion, if possible, if the plasma proceeds first and the plasma is more unstable), the endpoint detection module 1200 starts at the beginning of the plasma processing. It doesn't have to be. Instead, the endpoint module 1200 begins evaluating the current plasma process to identify the endpoint at the midpoint of the process (eg, at least 1/2 direction into the main process or a portion thereof). However, having a module 1200 that evaluates the entirety of the plasma process to detect one or more endpoints is not inherently bad. It only "unnecessarily" consumes processing time / performance. Moreover, plasma state evaluation and endpoint evaluation need not be performed at the same frequency or analytical time resolution. The amount of time between when the state of plasma processing is checked is greater than the time between plasma processing being checked to identify the endpoint. For example, the optical emission of the plasma may be checked at least every second for plasma status assessment and at least every 300 milliseconds to identify an endpoint.

Other features may be included in each of the endpoint detection subroutines described below that relate to plasma state assessment by the plasma state module 252. If the plasma state module 252 identifies an error or unknown condition regarding the current plasma processing, this may affect the operation of the endpoint detection circuit 1200. For example, the endpoint detection module 1200 may be configured to respond to such a condition by displaying information to the appropriate member whose endpoint is not called because of the identification of an error or unknown condition by the plasma state module 252. Furthermore, when the endpoint detection module 1200 is interfaced with the control of the processing chamber 36, identification of an error or unknown condition via the plasma state module 252 may cause some change in plasma processing and detect that endpoint. The current plasma process may be terminated later, and the ability of the endpoint detection module 1200 to terminate the next plasma process may be terminated. That is, the endpoint detection module 1200 "shuts off" or disables when the plasma state is found to be unacceptable by the plasma state module 252 because the endpoint information obtained under these circumstances cannot be trusted. Can be.

One or more of the above described types of features may be incorporated into each of the endpoint detection subroutines described below. The remainder of what is shown here upon endpoint detection via endpoint detection module 1200 relates only to the plasma stage of plasma processing. However, it is equally applicable to endpoint detection for any form of plasma related processing.

One embodiment of an endpoint detection subroutine that may be called by the endpoint module 1200 of FIGS. 7-32 is shown in FIG. The endpoint detection subroutine 1456 is used to determine when the plasma step of a given plasma process has affected the intended purpose or the desired result achieved. The current spectrum of the plasma of the processing chamber 36 at the current time t _c is obtained for the subroutine 1456 through execution of step 1460. Evaluation of this spectrum from the processing chamber 36 to the endpoint subdirectory 316 is performed in step 1464 to determine when the endpoint has been reached. One technique implemented by step 1464 is to determine when the spectrum from processing chamber 36 or at least a portion thereof is "matched" with at least one spectrum in endpoint subdirectory 316 of FIG. Optical emission data over a wavelength range (e.g., preferred optical bandwidth with the desired data resolution) is determined by endpoint endpoints, such as spectra obtained from the same processing chamber 36 during the previous run of the same plasma step at the time the endpoint is reached. May be stored in directory 316. The pattern of the spectrum of the plasma in the processing chamber 36 remains constant for the time after the end point is reached. Therefore, when analyzing data from previous executions of this plasma step in the same processing chamber 36, the identification of a plurality of spectra is taken into account when the endpoint occurs and there is no real change in practice. These spectra can be defined by the desired optical bandwidth and the desired data resolution. One or more of these “steady state” spectra may be included in the endpoint subdirectory 316 for comparison with the current spectrum for the purpose of identifying “matching” at step 1468 of the endpoint detection subroutine 1456. Use is done to the pattern recognition module 370 of FIG. 13 by steps 1464 and 1468 to see the case of "matching".

There are other ways to identify " matching " which indicates an end point in step 1468 of the end point detection subroutine 1456 of FIG. One or more wavelengths identified by search module 1456 in FIG. 49 may have respective plots of time versus density from previous executions of the same plasma step in the same processing chamber 36 defined by equations or functions. In this case, the evaluation through step 1464 is to plot the optical emission data of this wavelength in successive executions of the same plasma process in the same chamber 36, and determine whether this data fits an equation or a function. If so, the endpoint will be called if the current optical data is no longer "fit" with the equation or function at the time that the "change" described above with respect to search module 1300 occurred. Other techniques that can be used to evaluate this type of current data are to use the first derivative or second derivative of this equation or function to define a linear function, whereby the derivatives from this function are known as In some cases (ie, when the plot of the change in slope over time of the current optical data deviates from the slope defined by the first or second derivative), it may be easier to identify.

Features may be incorporated into the present invention to enhance the ability to call an endpoint based on the operation of one or more specific wavelengths. If the wavelengths indicating the endpoints are identified through the search module 1300 of FIG. 49, certain relevant characteristics of these particular wavelengths will be well known. Consider the case where only a single wavelength is selected as the endpoint indicator. The intensity of the peak of this wavelength can be known to identify the same in any successive run of the same plasma treatment. For example, the dominant wavelength may represent the maximum peak in any wavelength range. Therefore, the main wavelength can be found in these consecutive runs by finding the maximum peak in any region of the spectrum. In addition, the “location” of the peak of the main wavelength may be identified in relation to one or more other peaks. For example, the dominant wavelength can be represented by a peak located between two large peaks in a certain wavelength range. Therefore, the principal wavelength can be found in successive runs by finding this pattern in the optical emission of the plasma.

If the evaluation of the spectrum of the plasma of the processing chamber 36 at the current time t _c indicates that the endpoint has not yet been reached, the endpoint detection subroutine 1456 may be executed in any order from step 1468 (step 1476). And 1470. Step 1476 resets the "clock" of the subroutine 1456 by increasing the current time t _c by a factor of "n". The size of "n" defines the analytical time resolution. Step 1470 makes a determination as to whether a plasma treatment is present. The same types of techniques described above in connection with determining if the plasma is "on" can be used in step 1470. Unless the current plasma process is terminated, the subroutine 1456 returns to step 1460 where another spectrum is obtained for the subroutine 1456 at this new current time t _c for the repetition of the above-described analysis. Upon completion of the plasma processing, the subroutine 1456 proceeds from step 1470 to step 1466 where control of the plasma monitoring operation can be returned to, for example, the start-up module 202 of FIG. If no endpoint is detected by the time at which plasma processing ends, the information is detected and the member may have some errors or aberrations in the process even though the plasma state module 252 does not necessarily have to identify this condition. Can be provided.

The endpoint detection subroutine 1456 of Figure 52 will continue to execute in the manner described above until step 1468 identifies the endpoint via steps 1464 and 146 (8.) At this point the subroutine 1456 will execute step 1468. 14 will proceed to step 1474 where the process alert module 428 of Figure 14 is called, to the member that the end point of the main plasma stage has been reached (through execution of steps 454 and 458 of the process alert subroutine 432). An action is taken to inform, and an action is taken regarding the control of the plasma process (eg, terminating the plasma process or starting the next plasma step if the main step is the last step of the process). The control of the plasma monitoring operation may be returned to, for example, the start-up module 202 of FIG. 15, whether through < RTI ID = 0.0 > 1, < / RTI > or step 1472 of the endpoint detection subroutine 1456.

Another embodiment of an endpoint detection subroutine that can be accessed through endpoint module 1200 is shown in FIG. The endpoint detection subroutine 1506 of FIG. 53 initiates step 1510 at which the spectrum of plasma in the processing chamber 36 is obtained for the subroutine 1506 at the current time t _c . This spectrum and the "reference" spectrum are subtracted from each other in step 1514. Only the difference is important with respect to step 1514. In other words, it does not matter whether the current spectrum is subtracted from the "reference" spectrum or vice versa. Preferably, the reference spectrum and the spectrum of the current plasma treatment obtained are defined by the desired optical bandwidth and the desired data resolution.

At least two alternatives may be implemented for the “reference” spectrum from step 1514 of the endpoint detection subroutine 1506. The “reference” spectrum for step 1514 may be retrieved from the endpoint subdirectory 316 of FIG. 9. Preferably, the spectrum from endpoint subdirectory 316, which is the "reference" spectrum for step 1514 of endpoint detection subroutine 1506, is the spectrum associated with the same plasma process. That is, the spectra in the endpoint subdirectory 316 included in the "subtraction" of step 1514 are from the previous execution of the same plasma process in the same process chamber 36 as appropriate in the same process, assuming that the endpoint has at least occurred. Spectrum. How the D spectrum was selected for inclusion in the endpoint subdirectory 316 is as described above. Moreover, the information provided by the operator by the direct connection between the wafer production system 2 and the current plasma processing module 250 or by the pattern recognition module 370 identifying the processing, processing steps, etc. is detected, It can be used to select this spectrum from the endpoint subdirectory 316 for use in the "subtraction" associated with step 1514 in the plasma processing executed in the processing chamber 36. Another option for the “reference” spectrum for the purpose of step 1514 is the prior-in-time spectrum from the same plasma treatment in which the current spectrum was obtained in step 1510. For example, the spectrum at the current time t _c and the spectrum at the current time t _cn may be subtracted from each other at step 1514.

A subtraction operation comprising the current spectrum of the plasma of the processing chamber 36 and the "reference" spectrum through the execution of step 1514 of the endpoint detection subroutine 1514 at the current time t _c produces an output indicative of the difference. If the subroutine 1506 determines that this difference is within some predetermined tolerance at step 1518, the endpoint is considered to have been reached and the subroutine is processed to process alert module 428 for operation as described above from step 1518. The control will then proceed to step 1530 where control is transferred. In contrast, subroutine 1506 will proceed to step 1518 to execute steps 1522 and 1524. The order in which steps 1522 and 1524 are executed is not critical. Step 1522 resets the "clock" of the subroutine 1506 by increasing the current time t _c by a factor of "n". The size of "n" defines the analytical time resolution. Step 1524 makes a determination as to whether the current plasma processing has ended. The same type of techniques described above in connection with determining if the plasma is "on" in chamber 36 may be used in step 1524. Unless the current plasma process is terminated, the subroutine 1506 returns to step 1510 where another spectrum is obtained for the subroutine 1506 at the new current time t _c for the repetition of the analysis described above. When the plasma processing ends, the subroutine 1506 proceeds to step 1528 where the control of the plasma monitoring operation may return to, for example, the startup module 202 of FIG. 15 at step 1524.

The " differences " cited in step 1518 of the endpoint detection subroutine 1506 of FIG. 53 can be compared with a predetermined tolerance, such as the reference line density. The raw difference basis, percent difference basis, or both can be used to form this tolerance. For example, if all data points included in "subtraction" of step 1514 are within ± "x" strength units of each other, the subroutine 1506 is directed to proceed from step 1518 to step 1530. Another way to mention this is to consider that the endpoint has been reached for the purpose of the endpoint detection subroutine when there are no more peaks at the difference defined by step 1514. Three types of concepts are described with reference to FIGS. 54A-C, 55A-C, and 56A-C.

Spectrum 1496a of FIG. 54A shows the plasma in the processing chamber 36 at the initial portion of the plasma stage (eg, for current time t ₀ ) that is executed on the product in the processing chamber 36 (eg, FIG. The spectrum of 54a is the spectrum at the current time t _c from step 1510 of the endpoint detection subroutine 1506 of FIG. 53). Spectrum 1496a has a plurality of intensity peaks 1498a at various wavelengths and at various intensities. Spectrum 1500 of FIG. 54B is referred to by step 1514 of endpoint detection subroutine 1506 and is defined by a plurality of peaks 1502 at various wavelengths and varying intensities. FIG. 54C is spectrum 1496a of FIG. 54A. Only the difference between the spectrum 1500 of Figure 54c present and the output 1504a will be described.In Figure 54c the output 1504a is no longer based on the logic of the endpoint detection subroutine 1506 of Figure 53. Has a peak in it indicating that it has not been reached.

Spectrum 1496a of FIG. 55A shows the plasma in the processing chamber 36 at an intermediate time (eg, for the current time t ₃₀ ) shown in FIG. 54A (ie, the spectrum of FIG. 55A is shown in FIG. 53A). From step 1510 of the endpoint detection subroutine 1506 of the spectrum at the current time t _c ). Spectrum 1500 of FIG. 55B is the “reference” spectrum from step 1514 of endpoint detection subroutine 1506 and is shown in the nature of the output of spectrum 1496a of FIG. 55A and spectrum 1504 of FIG. 55B. The difference between 1500 will be described. However, it is noted that the magnitude of the peak at the output 154b of Fig. 55C is smaller than the magnitude of the peak from the output 1504a of Fig. 54C.

The spectrum 1496c of FIG. 56A shows the plasma in the processing chamber towards the end (eg, for the current time t ₄₅ ) in the same plasma step shown in FIGS. 54A and 55A (ie, the spectrum of FIG. From step 1510 of the endpoint detection subroutine 1506). Spectrum 1500 of FIG. 56B is again the “reference” spectrum from step 1514 of endpoint detection subroutine 1506, and FIG. 56C is present in the nature of spectrum 1496c and output 1504c of FIG. 56A. Description of the "difference" between spectra 1500. Note that output 1504c in FIG. 56C does not have a substantial peak indicating that an endpoint has been reached based on the logic of endpoint detection subroutine 1506. Therefore, the endpoint is called by subroutine 1506 when the spectrum of FIG. 56A bumps into action as described above.

Another embodiment of a subroutine that may be used by the endpoint detection module 1200 of FIGS. 7-32 is shown in FIG. In general, the endpoint detection subroutine 1204 of FIG. 57 is characterized by the desired plasma treatment or discrete portions thereof (e.g., according to "modal" changes in the plasma within chamber 36 or portions thereof when the endpoint occurs. , Plasma stage). In most cases there is a change in impedance associated with the processing chamber 36 at the time the endpoint is reached. This change in impedance is reflected by the "formal" change in plasma in process chamber 36 or its discrete portions. Changes in the plasma are in turn reflected in the optical emission. The endpoint can be invoked based only on this formal change (i.e., only through the endpoint detection subroutine 1204 of FIG. 57). However, preferably, a "formal" change to identify this endpoint is in combination with other endpoint identification techniques (e.g., via endpoint detection subroutine 1456 in Figure 52, endpoint detection subroutine 1506 in Figure 53). Through).

Optical emission data is obtained for the endpoint detection subroutine 1204 of FIG. 57 in step 1208. These optical emission data consist of plasma in the processing chamber 36 at time t _c1 . Two other time related variables are introduced in step 1212. As such, time t _c2 is greater than time t _{c1 by} an increment of “n”. The magnitude of "n" for the subroutine defines the analytical time resolution. Optical emission of the plasma in the processing chamber 36 is obtained for this time t _c2 through execution of step 1216 of the endpoint detection subroutine 1204.

The intensities of the optical emission from the current values for the times t _c1 and t _c2 are compared with each other in step 1220 of the endpoint detection subroutine 1204. If the difference between the optical emission at these two times is less than a predetermined amount (eg, an increase or decrease of some size), it is determined through the execution of step 1224, and the subroutine 1204 proceeds from step 1224 to step 1228. . Time t _c2 is set equal to time t _c1 in step 1228 and the spectral data for the new time t _c2 is obtained by endpoint detection subroutine 1204 going back to step 1212 for repetition as described above. When the plasma process ends, in order for the subroutine to exit from above, step 1240 is integrated to provide this function by proceeding to step 1244 where control may return to, for example, the startup module 202 of FIG. . Control may return to the startup module 202 after the endpoint is invoked through execution of step 1236 and as follows.

If the difference between the optical emission associated with time t _c1 and t _c2 is greater than a predetermined amount associated with step 1224 of the endpoint detection subroutine 1204, this may be an indication of a “formal” change in the plasma that in turn indicates the endpoint. . But this does not in any way dictate the form of "formal" change at this point. Only "formal" changes associated with the plasma occurring at the estimated time that the endpoint occurs, appearing quickly or suddenly, and continuously observed in successive executions of the same plasma process, indicate a change in impedance occurring at the endpoint. Therefore, the subroutine 1204 is used before depending on the subroutine 1204 to call the end point by the execution of the process alert module 428 through execution of step 1232. Subroutine 1204 may be implemented to confirm or increase the level of confidence that an endpoint is reached when other endpoint detection techniques are used to call the endpoint well.

The “formal” change associated with the endpoint detection subroutine 1204 of FIG. 57 can be monitored in relation to one or more wavelengths but by a limited impact of plasma performance and is detectable over an optical emission range (some wavelengths differing). Even if it proves a formal change of a stronger effect). For example, the optical emission associated with the difference recited in step 1224 may be related to a single wavelength. Moreover, the optical emission associated with the difference recited in step 1224 may be from a plurality of wavelengths, and the "difference" potentially indicating a change in impedance may be the case where one or more of these wavelengths demonstrate a "formal" change. . Another option is to watch for "formal" changes over some bandwidth. In this regard, the output 1260 shown in FIG. 58 illustrates the change in the intensity of the plasma in the chamber 36 over time through the plasma step. In particular, each point of output 1260 is optical at the plasma in chamber 36 at the desired data resolution of the current time (eg, t _c ) and the preceding time (eg, t _cn ) and over the desired optical bandwidth. Explain the difference between emissions. Preferably, each data point defining output 1260 is the difference between two adjacent times at which optical emission data is obtained from chamber 36. As can be seen at the output 1260 in FIG. 58, there is a significant change in plasma intensity from the 35 second and 40 second time points. This may be associated with a change in impedance associated with the processing chamber 36, which in turn is in the form of a “formal” change in which the endpoint detection subroutine 1204 of FIG. 57 is associated with the endpoint.

Another method of calling an endpoint through endpoint detection module 1200 is described in FIG. 64 in the form of endpoint detection subroutine 1670. Subroutine 1670 includes preparation or initiation steps 1672 and 1674 that may be executed in any order. Step 1672 indicates that the endpoint wavelength region is selected. One or more endpoint wavelength regions may be used to call a particular endpoint within the main plasma process. There are various implementation alternatives. The endpoint "A" may be called only if indicated by the relevant plot of all relevant endpoint wavelength regions or when indicated by the relevant plot of the endpoint wavelength region. One endpoint wavelength region may be designated as the primary indicator for endpoint "A", and any other endpoint wavelength region associated with the same endpoint may cause the call to endpoint "A" by the principal endpoint wavelength region to only increase the correct confidence level. Can be used.

Step 1674 is another initiation directed towards selecting how the pattern associated with the endpoint wavelength region selected in step 1672 is identified, and determined to indicate a particular endpoint (eg, via search module 1300). Various alternatives have already been described regarding how this event is identified, which can be used by the endpoint detection subroutine 1670 of FIG. Whether a particular endpoint is invoked based on the operation of a particular wavelength or wavelength region, one way to identify a "pattern" of a particular wavelength or wavelength region that indicates a particular endpoint is through an algorithm as indicated by step 1674. . Multiple algorithms can be used to identify the relevant pattern and make it the same as the endpoint, so these algorithms can be characterized as endpoint algorithms. One form of appropriate endpoint algorithm in some situations is to identify when the negative slope of the plot associated with the endpoint wavelength / wavelength region exceeds a certain threshold ("endpoint algorithm A1"). Another form of endpoint algorithm suitable for a situation is to identify when there is at least some change in the ratio of the negative slope in the plot associated with the endpoint wavelength / wavelength region ("endpoint algorithm A2"). Another form of endpoint algorithm suitable for a situation is to identify when both slopes of the plot associated with the endpoint wavelength / wavelength region exceed a certain threshold ("endpoint algorithm B1"). Another form of endpoint algorithm suitable for a situation is to identify when there is at least some change in the ratio of both slopes of the plot associated with the endpoint wavelength / wavelength region ("endpoint algorithm B2"). The "plot" cited in connection with these endpoint algorithms may be a plot of the change of the region over time with respect to the main endpoint wavelength region. The precursor or condition precedence for calling an endpoint for any of the endpoint algorithms A1, A2, B1, B2 may include meeting or exceeding some threshold for square root error of the main plot of the endpoint wavelength / wavelength region.

During the execution of the main plasma process, indicated by step 1676 of the endpoint detection subroutine 1670 of Figure 64, the optical emission of the plasma is obtained as indicated by step 1678. Preferably these optical emission include the desired optical bandwidth and are obtained using the desired data resolution and the desired data collection time resolution. This optical emission data is stored in a computer readable storage medium such as in a log file and / or plasma spectrum directory 284. In some cases, various wavelengths, including optical emission data, are classified in some way to make them independently identifiable. The end point of the main plasma process may be invoked through the execution of step 1680 in any of the ways described above (eg, via any of the end point algorithms A1, A2, B1, B2). For example, after classifying the input optical emission data on the current plasma process, any specified data may be retrieved or isolated for use by the endpoint detection module 1200.

There are a number of important features for calling an endpoint via endpoint module 1200, highlighted by endpoint detection subroutine 1670 of FIG. Initially, multiple endpoint wavelength regions may be selected in step 1672 (eg, multiple stages of plasma V processing) to invoke multiple endpoints in the plasma processing of step 1676. Another important point is that no hardware change is required for any plasma monitoring system using the endpoint detection subroutine 1670 to change the wavelength range suitable for use in calling a particular endpoint. This can be characterized as a virtual bandpass filter or a virtual filtering technique. As is known so far, optical emission is collected and stored in a computer readable medium at any plasma processing at the desired optical bandwidth, desired data resolution, and desired data collection time resolution. Moreover, endpoints have been described as being called on the basis of any wavelength or wavelength region that falls within the desired optical bandwidth but does not constitute the entirety of the desired optical bandwidth. That is, the endpoint indicators described herein have been described only as a subset of the preferred optical bandwidth. Nevertheless, optical emission data within the desired optical bandwidth is still collected in the main plasma processing. By properly storing this optical emission data in the manner described herein, certain specific portions may be restored by or called on the basis of the endpoint module 1200 for use in calling the endpoint (eg, collection Any portion of the data can be used by any of the endpoint algorithms A1, A2, B1, B2). Since this is done without adding a filter to obtain the desired optical emission, the endpoint module 1200 has a virtual bandpass filter function (i.e. collecting some amount of data during plasma processing and then monitoring the plasma state). And / or merely selecting a portion of this data to invoke one or more endpoints, providing a filtering function that does not require a change to the optical system, and can be described to be " virtually ". This is done by changing the values of the optical emission data, which is assumed to be indicative of or indicative of an endpoint, and without any hardware changes, simply because of the large range of optical emission data is still collected. This makes the endpoint module 1200 very "general" in that it can be used to call.

Wafer Distribution Module 1384-FIGS. 59-60

Various of the above evaluations provided by the plasma processing module 250 presently affect the distribution of the wafers to the various processing chambers 36 of the wafer production system 2 in some way in order to affect the distribution of the wafers of FIGS. 1384 may provide information. One embodiment of a subroutine that can be used by the wafer distribution module 1384 is described in FIG. Subroutine 1388 of Figure 55 is a step 1392, 1396, 1400 and protocol for the wafer distribution subroutine 1388 to proceed to the plasma processing fabrication module 252 for each of the chambers (36a-d) and 1402 (FIG. 1). The subroutine 1388 can accommodate a wafer production system having a different number of processing chambers 36. Monitoring of the current plasma process performed on the product in each of these process chambers 36a-d is included in the protocol of 1404. Any deviation from the normal spectral subdirectory 288 of the current plasma process performed on the product in either of the chambers 36a-d is noted at step 1408. If the current plasma processing performed on the product in a given processing chamber 288 does not "match" any plasma processing in the normal spectral subdirectory 288, the distribution of wafer 18 to this chamber 36 Is stopped. This is an error in the main plasma process identified by the plasma processing module 252 of FIGS. 21-25, the identification of an unknown condition in the main plasma process by the plasma processing manufacturing module 252 of FIGS. 21-25, or FIG. 27. May be due to identification of a dirty chamber by the chamber condition module 1084 of any of -29. Even if a pause is made for the first occurrence of this type of event, wafer distribution subroutine 1388 does not allow any number of consecutive plasma processes to deviate from the normal spectral subdirectory 288 in the given chamber 36 or any Percent fixed number of plasma treatments deviates from normal spectral subdirectory 288 in a given chamber 36 (eg, at least one of three runs does not match any plasma treatment in normal spectral subdirectory 288). Can be configured not to be stopped.

Another embodiment of a subroutine that may be used by the wafer distribution module 1348 of FIGS. 7-32 is shown in FIG. Subroutine 1416 is for wafer dispensing subroutine 1416 to proceed to plasma processing fabrication module 252 for each of each processing chamber 36a-d (FIG. 1). Subroutine 1416 can accommodate a wafer production system having a different number of processing chambers 74. Monitoring of the current plasma process performed on the product in each of these process chambers 36a-d is included in the protocol of step 1432. The total time required to perform each plasma process for each of the chambers 36 is known in step 1432. Step 1432 may use the plasma processing module 252 described above with reference to FIGS. 21-25 and the endpoint module 1200 described above with respect to FIGS. 52-58. The dispensing sequence of wafers 18 into these chambers 36 is based on the total time required to complete each plasma process, as noted in step 1436.

The logic of step 1436 of the wafer dispensing subroutine is given to the processing chamber 36 which executes the plasma processing in the shortest amount of time. That is, the dispensing sequence of the wafer to chamber 36 is to use the "fastest" processing chamber. If the "fastest" chamber is 36a and is available (ie there is no product in it), then the logic of step 1436 is that the other chamber (e.g., chamber 36b) is " to receive the next wafer 18 " Command the wafer handling assembly 44 to provide the wafer 18 to this chamber 36a. Alternatively, the logic of step 1436 may be to give priority to the processing chamber 36 performing plasma processing for the longest period of time. Extending the time required to perform the plasma treatment indicates that the chamber 36 will become dirty, and may need to be "cleaned" in the near future as described above in connection with the chamber condition module 1084 of FIGS. 27-29. Can be. Because this is the case, the operator of the facility incorporating the wafer production system 2 may decide to maximize execution on a given chamber 36 if it is determined that it may take "offline" for cleaning in the near future.

Plasma Surveillance Network 1610-Figure 65-66

The wafer fabrication facility will use a plurality of wafer production systems 2 (e.g., a plurality of clusters of chambers 36 having clusters of processing chambers 36 are controlled by a common MCU 58 and handled common wafers). Function by assembly). One method of networking the plurality of wafer production systems 2 is shown in the form of a plasma monitoring network 1610 shown in FIG. Although any number of wafer production systems 2 are networked using the principles of plasma monitoring network 1610, four wafer production systems 2a-d are shown in FIG. For the network 1610 each wafer production system 2 is shown to be contained within a single clean room 1646 defined by a barrier 1648 that is suitably enclosed. However, the plasma monitoring network 1610 may be used to interconnect the wafer production system 2 located in any number of clean rooms 1646 (not shown).

Each wafer production system 2 is capable of being interconnected appropriately and effectively to control operation in at least some manner based on monitoring of plasma processing operations (not shown) and the main control unit 58. Is shown. The plasma monitoring control unit 128 for a given wafer production system 2 may be configured to simultaneously monitor the plasma processing performed in each of the chambers 36 within the system 2, which wafer production Any plasma monitoring control unit 128 for the system 2 may be controlled as a chamber unit (e.g., although a single plasma monitoring control unit 128 may be used for a plurality of chambers 36). The plasma monitoring control unit 128 may be configured to control plasma monitoring operation independently in each of these chambers 936).

Each plasma monitoring control unit 128 and the main control unit 58 of a given wafer production system 2 are fluidly interconnected with a remote chamber cluster station located outside of the clean room. The main remote station 1630 is located outside the clean room 1646, and on the plasma monitoring network 1610, the plasma monitoring control unit 128 and the main control unit 58 of each wafer production system 2 are in fluid form. Are interconnected. Each remote chamber cluster station 1614 and primary remote station 1630 may have appropriate displays (eg, computer monitors) and data entry devices (eg, keyboards, mice).

Access to the plasma monitoring control unit 128 of a given wafer production system 2 and the main control unit 58 of a particular wafer production system is controlled through an access module 1802. There is an access module 1802 associated with the remote chamber cluster station 1614 and the primary remote station 1630. In turn, access module 1802 has a plurality of modules or accessible items. Flexibility exists with respect to what is done at each of remote cluster station 1614 and primary remote station 1630. That is, the plasma monitoring network 1610 may be “programmed” to fit the module shown in FIG. 66 to which each of the remote chamber cluster station 1614 and the main remote station 1630 can be accessed. In this flexibility, access to the module of FIG. 66 may be different for each of the main remote station 1630 and the remote chamber cluster station 1614, with access to the module of FIG. 66 being one or more remote chamber cluster stations 1614. Or any combination of them. The module shown in FIG. 66 may also be integrated or available in one or more of the plasma monitoring control units 128 in the clean room 1646, whether included in the plasma monitoring network 1510 or non-networking environment.

In most cases, neither the remote chamber cluster station 1614 nor the main remote station 1630 will be able to access any main control unit 58 to control the same operation. Nevertheless, this type of access may be controlled by its associated access module 1802 through the process control module 1801. If the given process control module 1801 is "on", access to the corresponding MCU 58 will be available. Conversely, if the given process control module 1801 is "off", access to the corresponding MCU 58 will be denied.

It will be more common for the primary remote station 1630 and the various remote chamber cluster stations 1614 to access one or more plasma monitoring control units 128. This type of access is controlled through their corresponding access module 1802. One of the modules available in the above manner on the plasma monitoring network 1610 is the data player module 1684. The data player module 1684 stores optical emission data recorded in a data log file from the plasma spectrum directory 284 or in a data log file from a plasma process previously executed on a certain chamber 36. 1630 or the corresponding remote chamber cluster station 1614. That is, this same data replaces the same current plasma processing module 250 used by the plasma monitoring module 200 in the main processing chamber 36. It may be reused by the containing data player module 1684. For example, changes may be made to the endpoint detection module 1200 of the data player module 1684. Importantly, these changes may occur within the clean room 1646. It does not actually happen to the plasma supervisory control unit 128 in the associated chamber 36. The effects of these changes are optically derived from previous plasma processing. It can be analyzed by using mission data, which allows proper experimentation with the actual optical emission data and does not necessarily affect manufacturing.

There are several ways to "change" the endpoint module 1200 on a given data player module 1684. For example, the feasibility of different wavelengths or wavelength ranges as endpoint indicator candidates may be determined by using this data in any of the methods described above (e.g., using endpoint algorithms (A1, A2, B1, B2)). It can be tested by trying to call it. The feasibility of different endpoint detection techniques can be tested using data player module 1684, such as changing from endpoint algorithm A1 to the described endpoint algorithm A2 for endpoint detection subroutine 1670 in FIG. Can be. Another possible change that can be tested using the data player module 1684 is to change the threshold for the square root error described above with respect to the endpoint detection subroutine 1670 of FIG. The time related settings can be changed via the data player module 1684 used to program the endpoint module 1200. Various time-related criteria may be entered into the endpoint module 1200 or one of its subroutines. The command may be either before the expiration of any amount of time (eg, to call the end point at least "x" seconds after the plasma has been performed in the chamber) and / or after some amount of time has elapsed (eg, End point detection module 1200 of data player module 1684 in order not to call the end point (if not called by end point module 1200 before "y" seconds after the plasma has been initially performed in the chamber). Will be entered. Changes are also made to the plasma state module 252 and can be tested using optical emission data from any previous plasma processing via the data player module 1684.

Another module available on the plasma monitoring network 1610 is the statistical analysis module 1686. Basically, statistical analysis module 1686 evaluates various characteristics of past performance of one or more chambers 36 in a given wafer production system 2, and evaluates past characteristics of one or more wafer production systems 2 or a combination thereof. It will be used to evaluate various characteristics. For example, the statistical analysis module 1686 may compare the past performance of one chamber 36 in one wafer production system 2 with itself, another chamber 36 in the same wafer production system 2d, Or for comparison with other chambers 36 of different wafer production systems 2 for any desired period. The comparison of one wafer production system 2 can be compared with itself or with another wafer production system 2 for a period of time via the statistical analysis module 1686. Any other statistical analysis will be available through the statistical analysis module 1686.

Operational control of any plasma monitoring control unit 128 in the chamber 36 will be effected via the remote control module 1688 shown in FIG. For example, which remote chamber cluster station 1614, primary remote station 1630, or some combination thereof affects how the current plasma process performed in the main chamber 36 or the next current plasma process operates. It will be possible to make some changes to one or more submodules of the plasma monitoring module 200 of the main plasma monitoring control unit 128 in the chamber 36. This includes some changes that can be made in relation to the main plasma state module 250 and the endpoint module 1200. Access to these changes may be provided to the remote chamber cluster station 1614 for the entire wafer production system 2, and may be done as a chamber unit within the wafer production system 2. Typically, remote chamber cluster station 1614 is not accessible to each plasma monitoring control unit 128 for any of its respective chambers 36 via remote control module 1688 (ie, some remote control). If module 1688 is "on" it will provide known access and if the remote control module is "off" it will not be accessed). In some cases, the main remote station 1630 can be accessed from each chamber 36 to the various plasma monitoring control units 128 via the control module 1688, while in other cases the main remote station 1630 is a clean room. There will be no access to the various plasma monitoring control units 128 in the various chambers 36 within 1646.

Finally, the process review module 1689 is available to one or more remote chamber cluster stations 1614, primary remote stations 1630, or a combination thereof, and the plasma monitoring network 1610 via the process review module 1689. It is possible to review data on the plasma processing currently performed on the designated chamber 36 in the designated wafer production system 2 to which access is provided. For example, the process review module 1690 may include a plasma process (eg, performed in any of the process chambers 36 in real time, including the primary remote station 1630 reviewing one or more processes simultaneously. , Data that reflects plasma processing or portions thereof, and plots of endpoint wavelength / wavelength regions). However, the remote chamber cluster station 1614 has its own wafer production system, although the process review feasibility for one or more remote chamber cluster stations 1614 is expanded to review plasma processes executed in different wafer production systems 2. It will be accessed through the process review module 1690 to review the plasma processes executed in chamber 36 of (2).

conclusion

The plasma monitoring assembly 174, 500, 700 provides many advantages as described above. One advantage is that the logic of the plasma processing module 250 and its various submodules can be used in any type of plasma chamber and moreover can be used to evaluate any type of plasma processing. Meaningful application of the logic of module 250 or any of its submodules does not require any use of module 250 in chamber form / design, and the same module 250 for other chamber forms / designs. Do not. Similarly, the application of module 250 or any of its submodules does not require the use of module 250 for one type of plasma processing and use of the same module for somewhat different plasma processing. Do not. In this sense module 250 is a generic plasma monitoring tool.

Another advantage of the plasma monitoring assembly 174, 500, 700 is that the data used to evaluate the plasma processing performed in the processing chamber is taken from the very same processing chamber when performing the very same type of plasma processing. In this sense, when the assemblies 174, 500, 700 are installed on a particular processing chamber, the assemblies 174, 500, 700 will be specific to the chamber. Certain plasma processes operate in one way on one chamber and other methods on other chambers are not critical for the plasma monitoring assembly 174, 500, 700. Each assembly 174, 500, 700 applies to the characteristics of its associated chamber and learns about the chamber through the actual plasma processing on the chamber to build a plasma spectral directory 284 for that particular chamber. Again, each chamber will have its own plasma spectral directory 284 or the like in that all information used to evaluate a given plasma process in a given plasma chamber is obtained from the very same process chamber.

Important information about current plasma processing is available with respect to the plasma manufacturing module 250 and its various submodules. Module 250 determines when the current plasma treatment proceeds with one or more previous runs of the same plasma treatment on the same chamber; Determine whether an endpoint of a given plasma step has been reached; Determine whether an endpoint of each plasma step has been reached in the plasma treatment; Identify current plasma processing for the operator; Identify the current plasma stage for the operator; Determine when the chamber is cleaned; Has the ability to determine when each of the plasma cleaning and conditioning wafer operation can be terminated. How this information is used is at the discretion of the operator of the facility incorporating the wafer production system 2. For example, the current plasma processing module 250 may easily use a source of information about the current plasma processing. Currently the plasma processing module 250 integrates the processing control for the system 2 with the module 250, such as to automate the control of the plasma processing operation based on the information provided by the module 250. It will play a more active role in the operation of (2). Various combinations may be used in which a submodule will be "programmed" for information only, for process control only, or for both. Flexibility to address these types of issues allows each of the modules 250 and its submodules to be computer readable data storage media (eg, computer readable memory such as one or more hard disks, floppy disks, zip-drive disks, CDS). Is provided by the modular configuration of the current plasma processing module 250 stored therein). Therefore, changes to the structure of the current plasma processing module 250 can be easily implemented.

The foregoing has been described for purposes of explanation. Moreover, the details are not intended to limit the invention to the form disclosed herein. In conclusion, the same degree of change and modification as the above description and the knowledge of related art are within the scope of the present invention. The above-described embodiments illustrate the best mode for practicing the present invention and enable those skilled in the art to use these or other embodiments in various modifications as required by the particular application or use of the present invention. It was intended.

Claims (514)

A method for monitoring a plasma process comprising a first plasma step, Generating plasma in the processing chamber; Performing the first plasma step using the generating step, wherein a first endpoint of the first plasma step exists when the first plasma step has generated a first predetermined result; Evaluating the condition of the plasma in the processing chamber, where the condition is the cumulative result of all parameters affecting the plasma in the processing chamber; And Monitoring the performing step to confirm the occurrence of the first endpoint of the first plasma step Plasma treatment monitoring method comprising a. The method of claim 1, The plasma process is selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation and a validation wafer operation performed on at least one product in the processing chamber. Plasma treatment monitoring method. The method of claim 1, Wherein said evaluating step is performed in said processing chamber at least every one nanometer within a first wavelength range of from about 250 nanometers to about 1000 nanometers and at least a plurality of different time points during said performing step. Assessing optical emissions of the plasma Plasma treatment monitoring method. The method of claim 1, Terminating the monitoring step when the evaluation step confirms a first condition, wherein the first condition is that the performing step proceeds without conforming to a first standard associated with the performing step; Plasma treatment monitoring method further comprising. The method of claim 1, The monitoring step, Obtaining optical emission of the plasma in the processing chamber at at least a plurality of different time points during the performing step; Comparing the optical emission at each of the plurality of different viewpoints with the optical emission at a time earlier than the plurality of different viewpoints; And Determining when the optical emission from the comparing step is within a predetermined amount of each other, and equalizing it with the first endpoint Plasma treatment monitoring method. The method of claim 5, Wherein said optical emission at each of said plurality of different viewpoints has an associated pattern, wherein said comparing step comprises comparing said pattern of said optical emission from said comparing step, wherein said predetermined of said determining step The amount of defines the time when the pattern of the optical emission from the comparing step is considered a match. Plasma treatment monitoring method. The method of claim 5, The comparing step includes comparing the optical emission at a first time point with the optical emission from the immediately preceding time point. Plasma treatment monitoring method. The method of claim 1, The monitoring step, Obtaining optical emission of the plasma in the processing chamber at at least a plurality of different time points during the performing step; Comparing the optical emission at each of the plurality of different time points with at least one standard; And Determining when the optical emission from at least one of the plurality of viewpoints is within a predetermined amount of the at least one standard, and equalizing it with the first endpoint Plasma treatment monitoring method. The method of claim 8, The at least one standard is obtained from a previous execution of the same performing step in the same processing chamber. Plasma treatment monitoring method. The method of claim 8, The at least one standard is stored in a computer-readable storage medium Plasma treatment monitoring method. The method of claim 8, The optical emission at each of the plurality of different viewpoints has an associated pattern, the at least one standard has a standard pattern, and the comparing step includes the pattern of the optical emission at each of the plurality of different viewpoints. Comparing with a standard pattern, wherein the predetermined amount of the determining step defines when the standard pattern and the pattern of the optical emission from at least one of the plurality of different viewpoints are considered to match. doing Plasma treatment monitoring method. The method of claim 1, The monitoring step includes monitoring the performing step for generation of the first endpoint using first and second techniques, wherein the first technique is different from the second technique, and the first endpoint is Verifiable by one of the first and second techniques described above Plasma treatment monitoring method. The method of claim 12, The first and second techniques determine when there is at least a first change in impedance of the processing chamber, during the performing step of the plasma in the processing chamber over a first wavelength range at at least a plurality of points in time. Evaluating optical emission and evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the performing step, respectively. Plasma treatment monitoring method. The method of claim 1, The monitoring step includes determining if there is at least a first change in impedance of the processing chamber and equalizing it with the first endpoint. Plasma treatment monitoring method. The method of claim 14, The determining step is based on a change in at least a portion of the optical emission of the plasma in the processing chamber during the performing step. Plasma treatment monitoring method. The method of claim 1, The monitoring step includes evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the performing step. Plasma treatment monitoring method. The method of claim 16, Evaluating the at least one individual wavelength, Determining when the plot of intensity versus time of the at least one individual wavelength deviates more than a predetermined amount from a given equation, wherein a change in the slope of the plot of intensity versus time of the at least one individual wavelength Determining when the speed deviates by more than a predetermined amount and using a technique selected from the group consisting of a combination of these steps Plasma treatment monitoring method. The method of claim 1, The plasma treatment comprises a second plasma step that is different from the first plasma step through a change in the plasma at least from the production step, The method, Performing the second plasma step using an introduction step after performing the first plasma step, wherein the second plasma step occurs when the second plasma step has generated a second predetermined result. Endpoint exists; Monitoring said performing step of said second plasma step to confirm the occurrence of said second endpoint of said second plasma step; And Terminating the generating step after completion of the performing step of the second plasma step, wherein the first and second endpoints are confirmed before the ending step; Plasma treatment monitoring method. 10. A plasma monitoring system for plasma processing performed in a processing chamber and comprising a first plasma step, wherein the first endpoint of the first plasma step is when a predetermined first result of the first plasma step is realized. , The system comprises a computer-readable storage medium, The storage medium, Means for receiving said data relating to said plasma processing, said first plasma step; Means for evaluating a condition of the plasma during performance of the first plasma step from data relating to the first plasma step provided to the data receiving means, wherein the condition affects all the plasma in the processing chamber. Cumulative result of the parameter; And Means for confirming occurrence of said first endpoint from data relating to said first plasma step provided to said data receiving means; Plasma monitoring system. The method of claim 19, The plasma process is selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation and a verification wafer operation performed on at least one product in the processing chamber. Plasma monitoring system. The method of claim 19, The data receiving means is adapted for processing within at least a plurality of different time points during the first plasma step within a first wavelength range of about 250 nanometers to about 1000 nanometers, and at least every one nanometer over the first wavelength range. Means for receiving data indicative of optical emissions of the plasma in the chamber Plasma monitoring system. The method of claim 19, Means for disabling said identification means when said evaluation means confirms a first condition, wherein said first condition is that said first plasma step proceeds without conforming to a first standard associated with said first plasma step; Plasma monitoring system further comprising. The method of claim 19, The checking means, Means for receiving data indicative of an optical emission of the plasma in the processing chamber at at least a plurality of different time points during the first plasma step; Means for comparing the optical emission at each of the plurality of different viewpoints with the optical emission at a time earlier than the plurality of different viewpoints; And Means for determining when the optical emission from the comparing means is within a predetermined amount of each other and equalizing it with the first endpoint Plasma monitoring system. The method of claim 23, The optical emission from the acquiring means has an associated pattern, wherein the comparing means comprises means for comparing the pattern of the optical emission from the comparing means, wherein the predetermined amount of the determining means Defining when the pattern of the optical emission from the comparing means is considered a match Plasma monitoring system. The method of claim 23, The comparing means compares the optical emission at a first time point with the optical emission from the immediately preceding time point. Plasma monitoring system. The method of claim 19, The checking means, Means for receiving data indicative of an optical emission of the plasma in the processing chamber at at least a plurality of different time points during the first plasma step; Means for comparing the optical emission at each of the plurality of different viewpoints with at least one standard; And Means for determining when the optical emission from at least one of the plurality of viewpoints is within a predetermined amount of the at least one standard. Plasma monitoring system. The method of claim 26, The at least one standard is stored in a computer-readable storage medium Plasma monitoring system. The method of claim 26, The optical emission at each of the plurality of different viewpoints has an associated pattern, the at least one standard has a standard pattern, and the means for comparing the pattern of the optical emission at each of the plurality of different viewpoints. Means for comparing with a standard pattern, wherein said predetermined amount of said determining means defines when said pattern from said comparing means is deemed to match. Plasma monitoring system. The method of claim 19, The means for identifying comprises means for monitoring the first plasma stage for generation of the first endpoint using first and second techniques, wherein the first technique is different from the second technique. Plasma monitoring system. The method of claim 29, The first and second techniques further comprise means for determining when there is at least a first change in impedance of the processing chamber, in the processing chamber over a first wavelength range at at least a plurality of points during the first plasma step. Each selected from the group consisting of means for evaluating optical emission of the plasma and means for evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the first plasma step. Plasma monitoring system. The method of claim 19, The means for identifying comprises means for determining whether there is at least a first change in impedance of the processing chamber Plasma monitoring system. The method of claim 31, wherein The determining means is based on a change in at least a portion of the optical emission of the plasma in the processing chamber during the first plasma step. Plasma monitoring system. The method of claim 19, The means for identifying comprises means for evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the first plasma step. Plasma monitoring system. The method of claim 33, wherein Means for evaluating the at least one individual wavelength, Means for determining when the plot of intensity versus time of the at least one individual wavelength deviates by more than a predetermined amount from a given equation, the slope of the plot of intensity versus time of the at least one individual wavelength Means for determining when the rate of change deviates by more than a predetermined amount and using a technique selected from the group consisting of a combination of these means Plasma monitoring system. The method of claim 19, The plasma treatment comprises a second plasma stage that is different from the first plasma stage, the second endpoint of the second plasma stage is when the second result of the second plasma stage is realized, The computer-readable storage medium includes: Means for confirming occurrence of said second endpoint from data relating to said second plasma step provided to said data receiving means; Plasma monitoring system. A system for performing at least a first plasma step, A processing chamber comprising a window; A first gas inlet and a first gas outlet fluidly interconnected with the processing chamber; Plasma generator in the processing chamber, wherein the first plasma step may be executed in the processing chamber when the plasma generator is activated, wherein the first plasma step occurs when the first plasma step has generated a first predetermined result. A first endpoint exists; Means for evaluating a condition of the plasma in the processing chamber, wherein the condition is a cumulative result of all parameters affecting the plasma in the processing chamber; And Means for confirming the occurrence of the first endpoint of the first plasma step System comprising. A method for monitoring a plasma process comprising a first plasma step, Generating plasma in the processing chamber; Executing the first plasma step in the processing chamber using the generating step, wherein there is a first endpoint of the first plasma step that is when the first plasma step produces a predetermined first result; Performing a first evaluation step comprising evaluating at least one characteristic of the plasma in the processing chamber during at least a portion of the performing step using a first time resolution, wherein the first evaluation step is performed. The time resolution means that each adjacent time pair at which the performing step of the first evaluation step is executed is not more than the same amount as the first time resolution; And Confirming that the first endpoint of the first plasma step has occurred, wherein the verifying step comprises evaluating data related to the plasma during at least a portion of the execution step using a first time resolution; Performing a second evaluation step, wherein the second time resolution means that each adjacent time pair at which the performing step of the second evaluation step is executed is not more than the same amount as the second time resolution. 2 hour resolution is different from the first time resolution − Plasma treatment monitoring method comprising a. The method of claim 37, The performing step of the first evaluation step includes evaluating a condition of the plasma in the processing chamber, wherein the condition is a cumulative result of all parameters affecting the plasma in the processing chamber. Plasma treatment monitoring method. The method of claim 38, The first time resolution is greater than the second time resolution Plasma treatment monitoring method. The method of claim 37, The first time resolution is greater than the second time resolution Plasma treatment monitoring method. A method of monitoring plasma processing comprising a first plasma step and a second plasma step, Loading a large amount of product into the processing chamber; Exposing the product in the processing chamber to plasma; Performing said first plasma step on said product, wherein there is a first endpoint of said first plasma step when said first plasma step has produced a predetermined first result for said product; Monitoring the performing of the first plasma step to confirm the occurrence of the first endpoint Performing said second plasma step on said product, wherein a second endpoint of said second plasma step exists when said second plasma step has produced a second predetermined result on said product, and said predetermined The second result is different from the predetermined first result; Monitoring the performing of the second plasma step to confirm the occurrence of the second endpoint; And Unloading the product from the processing chamber after both the first and second endpoints are identified Plasma treatment monitoring method comprising a. Plasma processing performed on a first product in a processing chamber, wherein the plasma processing comprises first and second plasma steps, wherein the first endpoint of the first plasma step is a predetermined first of the first plasma steps When a result is realized for the product, the second end point of the second plasma step is when a predetermined second result of the second plasma step is realized for the product, and the predetermined second result is the predetermined In the plasma monitoring system for The system comprises a computer-readable storage medium, The computer-readable storage medium includes: Means for receiving data relating to the plasma processing and including data relating to each of the first and second plasma steps; Means for confirming occurrence of the first endpoint from data relating to the first plasma step provided to the data receiving means; And Means for confirming occurrence of said second endpoint from data relating to said second plasma step provided to said data receiving means; Plasma monitoring system. Plasma processing for a first product in a processing chamber, wherein the plasma processing comprises a first and a second plasma step, the first endpoint of the first plasma step being a predetermined first result of the first plasma step When the second end point of the second plasma step is realized for the first product and when the second end point of the second plasma step is realized for the first product, the predetermined second result is A system for executing a predetermined first result different- A processing chamber comprising a product access and a window, wherein the product can be transferred between an interior and an exterior of the processing chamber via the product access; A first gas inlet and a first gas outlet fluidly interconnected with the processing chamber; A plasma generator in the processing chamber, wherein the first and second plasma steps may be performed on the first product in the processing chamber after activation of the plasma generator; And Computer-readable storage media Including, The computer-readable storage medium includes: Means for ascertaining when said first endpoint of said first plasma step has occurred; And Means for ascertaining when said second endpoint of said second plasma step has occurred; system. A method for monitoring a plasma process comprising a first plasma step, Generating plasma in the processing chamber; Performing the first plasma step on the product, wherein a first endpoint of the first plasma step is present when the first plasma step has produced a first predetermined result; And Monitoring said performing step of said first plasma step to confirm the occurrence of said first endpoint, wherein said monitoring step comprises performing said step for generation of said first endpoint using first and second techniques; Monitoring the second technology, wherein the first technology is different from the second technology, and the first endpoint is identifiable by at least one of the first and second technologies. Plasma treatment monitoring method comprising a. The method of claim 44, The plasma process is selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation and a verification wafer operation performed on at least one product in the processing chamber. Plasma treatment monitoring method. The method of claim 44, Optical image of the plasma in the processing chamber within the first wavelength range of about 250 nanometers to about 1000 nanometers and at least every 1 nanometer over the first wavelength range at a number of different time points during the performing step. Acquiring optical emissions Plasma treatment monitoring method comprising a. The method of claim 46, The spacing between each pair of adjacent wavelengths retrieved by the acquiring step is selected from the group consisting of a combination of equal intervals, unequal intervals, and identical and unequal intervals. Plasma treatment monitoring method. The method of claim 44, The first technique of the checking step, Acquiring an optical emission of the plasma in the processing chamber at at least a plurality of different time points during the performing step; Comparing the optical emission at each of the plurality of different time points with the optical emission from a time earlier than the plurality of different time points; And Determining when the optical emission from the comparing step is within a predetermined amount of each other, and equalizing it with the first endpoint Plasma treatment monitoring method. 49. The method of claim 48 wherein The comparing step includes comparing the optical emission at a first time point with the optical emission from the immediately preceding time point. Plasma treatment monitoring method. 49. The method of claim 48 wherein The optical emission at each of the plurality of different time points has an associated pattern, wherein the comparing step compares the pattern of the optical emission from the comparing step, and the predetermined amount of the determining step is determined from the comparing step. Defining when said pattern of said optical emission is considered to match Plasma treatment monitoring method. The method of claim 44, The first technique of the checking step, Obtaining optical emission of the plasma in the processing chamber at at least a plurality of different time points during the performing step; Comparing the optical emission at each of the plurality of time points with at least one standard; And Determining when the optical emission from at least one of the plurality of different viewpoints is within a predetermined amount of the at least one standard, and equalizing it with the first endpoint Plasma treatment monitoring method. The method of claim 51, wherein The at least one standard is obtained from a previous execution of the same performing step in the same processing chamber. Plasma treatment monitoring method. The method of claim 51, wherein The at least one standard is stored in a computer-readable storage medium Plasma treatment monitoring method. The method of claim 51, wherein The optical emission at each of the plurality of different viewpoints has an associated pattern, the at least one standard has a standard pattern, and the comparing step includes the pattern of the optical emission at each of the plurality of different viewpoints. Compared to a standard pattern, the predetermined amount of the determining step defines when the standard pattern and the pattern of the optical emission from at least one of the plurality of different viewpoints are considered to match. Plasma treatment monitoring method. The method of claim 44, The first technique includes determining if there is at least a first change in impedance with the processing chamber. Plasma treatment monitoring method. The method of claim 55, The determining step is based on a change in at least a portion of the optical emission of the plasma in the processing chamber during the performing step. Plasma treatment monitoring method. The method of claim 55, Confirming when there is at least a first change in impedance includes confirming the presence of at least one of a first and a second condition, the first condition lasting no more than a first time period. A change in intensity at a first wavelength of the plasma in the processing chamber that is greater than a first predetermined amount, and the second condition is greater than the predetermined second amount that lasts no more than a second time period in the processing chamber. Change in the average intensity of the multiple wavelengths of the plasma Plasma treatment monitoring method. The method of claim 44, The first technique includes evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the performing step. Plasma treatment monitoring method. The method of claim 58, Evaluating the at least one individual wavelength, Determining when the plot of intensity versus time of the at least one individual wavelength deviates more than a predetermined amount from a given equation, wherein the rate of change of the slope of the plot of intensity versus time of the at least one individual wavelength is predetermined Determining when the deviation is greater than the amount of and using a technique selected from the group consisting of a combination of these steps Plasma treatment monitoring method. The method of claim 58, Evaluating the at least one individual wavelength, Determining when the plot of intensity versus time of the at least one individual wavelength deviates more than a predetermined amount from a predetermined function, wherein the output of the first derivative of the predetermined function is a predetermined amount Determining when more deviations occur, determining when the output of the second derivative of the given function is more than a predetermined amount, and using a technique selected from the group consisting of a combination of these steps Plasma treatment monitoring method. The method of claim 44, The first and second techniques, respectively, determine when there is at least a first change in the impedance of the processing chamber, during the performing step at least at a plurality of time points within the processing chamber over the first wavelength range. Evaluating the optical emission of the plasma, and evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the performing step. Plasma treatment monitoring method. The method of claim 44, The first and second techniques, respectively, determine when there is at least a first change in the impedance of the processing chamber, during the performing step at least at a plurality of time points within the processing chamber over the first wavelength range. Evaluating the rate of change of the optical emission of the plasma, evaluating the optical emission of the plasma in the processing chamber over a first wavelength range in relation to a first standard at at least a plurality of time points during the performing step, Evaluating at least one individual wavelength of the plasma in the processing chamber at at least a number of time points during the performing step in relation to conformity with a predetermined function, and outputting at least one derivative of the predetermined function In connection with said plastics in said processing chamber at at least a plurality of times during said performing step. Village is selected from the group consisting of evaluating the at least one respective wavelength Plasma treatment monitoring method. The method of claim 44, Evaluating a condition of the plasma in the processing chamber, where the condition is a cumulative result of all parameters affecting the plasma in the processing chamber. Plasma treatment monitoring method further comprising. 63. The method of claim 62, Wherein said evaluating step is performed in said processing chamber at least every one nanometer within a first wavelength range of from about 250 nanometers to about 1000 nanometers and at least a plurality of different time points during said performing step. Monitoring the optical emission of the plasma Plasma treatment monitoring method. The method of claim 44, The plasma treatment further comprises a second plasma step, wherein the method comprises Performing the second plasma step, wherein a second endpoint of the second plasma step exists when the second plasma step has generated a second predetermined result, and the second predetermined result is the second predetermined point 1 different from result-; Monitoring the performing of the second plasma step to identify the occurrence of the second endpoint; And Terminating the generating step when the first and second endpoints are identified. Plasma treatment monitoring method. 12. A plasma monitoring system for plasma processing performed in a processing chamber and comprising a first plasma step, wherein the first endpoint of the first plasma step is when the first result of the first plasma step is realized. The system comprises a computer-readable storage medium, The storage medium, Means for receiving data relating to the plasma processing and including data relating to the first plasma step; And Means for confirming occurrence of the first endpoint from data relating to the first plasma step provided to the data receiving means, wherein the verifying means comprises first and second techniques, wherein the first technique comprises: And a second endpoint, wherein the first endpoint is identifiable by at least one of the first and second technologies. Plasma monitoring system. The method of claim 66, wherein The plasma process is selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation and a verification wafer operation performed on at least one product in the processing chamber. Plasma monitoring system. The method of claim 66, wherein The data receiving means is adapted for processing within at least a plurality of different time points during the first plasma step within a first wavelength range of about 250 nanometers to about 1000 nanometers, and at least every one nanometer over the first wavelength range. Means for receiving data indicative of an optical emission of said plasma in a chamber Plasma monitoring system. The method of claim 68, wherein The spacing between each pair of adjacent wavelengths provided to the receiving means is selected from the group consisting of a combination of equal intervals, unequal intervals and intervals not identical to Plasma monitoring system. The method of claim 66, wherein The first technique, Means for receiving data indicative of an optical emission of the plasma in the processing chamber at at least a plurality of different time points during the first plasma step; Means for comparing the optical emission at each of the plurality of different views with the optical emission from a view earlier than the plurality of different views; And Means for determining when the optical emission from the comparing means is within a predetermined amount of each other; Plasma monitoring system. The method of claim 70, The comparing means compares the optical emission at a first time point with the optical emission from the immediately preceding time point. Plasma monitoring system. The method of claim 70, The optical emission from the acquiring means has an associated pattern, wherein the comparing means comprises means for comparing the pattern of the optical emission from the comparing means, wherein the predetermined amount of the determining means Defining when the pattern of the optical emission from the comparing means is considered a match Plasma monitoring system. The method of claim 66, wherein The first technique, Means for receiving data indicative of an optical emission of the plasma in the processing chamber at at least a plurality of different time points during the first plasma step; Means for comparing the optical emission at each of the plurality of different viewpoints with at least one standard; And Means for determining when the optical emission from at least one viewpoint of the plurality of different viewpoints is within a predetermined amount of the at least one standard. Plasma monitoring system. The method of claim 73, wherein The at least one standard for the first plasma step is obtained from a previous execution of the same first plasma step in the same processing chamber. Plasma monitoring system. The method of claim 73, wherein The at least one standard is stored in the computer-readable storage medium Plasma monitoring system. The method of claim 73, wherein The optical emission at each of the plurality of different viewpoints has an associated pattern, the at least one standard has a standard pattern, and the means for comparing the pattern of the optical emission at each of the plurality of different viewpoints. Means for comparing with a standard pattern, wherein said predetermined amount of said determining means defines when said pattern from said comparing means is deemed to match. Plasma monitoring system. The method of claim 66, wherein The means for identifying comprises means for determining whether there is at least a first change in impedance of the processing chamber Plasma monitoring system. 78. The method of claim 77 wherein The determining means is based on a change in at least a portion of the optical emission of the plasma in the processing chamber during the first plasma step. Plasma monitoring system. 78. The method of claim 77 wherein The means for determining includes means for ascertaining the presence of at least one of the first and second conditions, the first condition being greater than the first predetermined amount, the predetermined first amount lasting no more than a first time period. Is a change in intensity at a first wavelength of the plasma in the processing chamber, and wherein the second condition is greater than a predetermined second amount lasting no more than a second time period within the processing chamber during the first plasma step. Change in average intensity at multiple wavelengths of the plasma Plasma monitoring system. The method of claim 66, wherein The means for identifying comprises means for evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the first plasma step. Plasma monitoring system. 81. The method of claim 80, Means for evaluating the at least one individual wavelength, Means for determining when the plot of intensity versus time of the at least one individual wavelength deviates by more than a predetermined amount from a given equation, wherein the rate of change of the slope of the plot of intensity versus time of the at least one individual wavelength is Means for determining when to deviate by more than a predetermined amount, and using a technique selected from the group consisting of Plasma monitoring system. The method of claim 66, wherein The first and second techniques further comprise means for determining when there is at least a first change in impedance of the processing chamber, in the processing chamber over a first wavelength range at at least a plurality of points during the first plasma step. Each selected from the group consisting of means for evaluating optical emission of the plasma and means for evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the first plasma step. Plasma monitoring system. The method of claim 66, wherein The first and second techniques are respectively means for determining when there is at least a first change in the impedance of the processing chamber, the at least a plurality of time points during the first plasma step, over the first wavelength range. Means for evaluating the rate of change of the optical emission of the plasma in the processing chamber, the optical image of the plasma in the processing chamber over a first wavelength range in relation to a first standard at least at a plurality of time points during the first plasma step Means for evaluating the option, means for evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the performing step with respect to conformity with a predetermined function, and at least one of a predetermined function At least a number of points during the execution phase in relation to the output of the derivative of It is selected from the group consisting of means for evaluating the plasma at least one of the individual wavelengths in the processing chamber Plasma monitoring system. The method of claim 66, wherein The computer-readable storage medium includes: Conditions of the plasma during at least the first plasma stage from data relating to the first plasma stage provided to the data receiving means, wherein the condition is a cumulative result of all parameters affecting the plasma in the processing chamber. Means for evaluating data indicative of Plasma monitoring system. The method of claim 66, wherein The plasma treatment comprises a second plasma step that is different from the first plasma step, the second endpoint of the second plasma step is when a predetermined result of the second plasma step is realized, The computer-readable storage medium further comprises means for ascertaining occurrence of the second endpoint from data relating to the second plasma step provided to the data receiving means, wherein the second endpoint verification means comprises: first and A second technique, said second endpoint being identifiable by at least one of said first and second techniques Plasma monitoring system. Plasma processing for a first product in a processing chamber, wherein the plasma processing comprises a first plasma step, and wherein the first endpoint of the first plasma step is when the first result of the first plasma step is realized. In the system to run, Processing chamber; A first gas inlet and a first gas outlet fluidly interconnected with the processing chamber; A plasma generator in the processing chamber, wherein the first plasma step may be executed in the processing chamber after activation of the plasma generator; And Computer-readable storage media Including, The computer-readable storage medium includes: Means for receiving data relating to the plasma processing and including data relating to the first plasma step; And Means for confirming occurrence of the second endpoint from data relating to the second plasma step provided to the receiving means, wherein the verifying means comprises first and second techniques, wherein the first technique comprises the first technique; 2, wherein the first endpoint is identifiable by at least one of the first and second techniques. system. A method for monitoring a plasma process comprising a first plasma step, Generating plasma in the processing chamber; Performing the first plasma step using the generation step, wherein the first endpoint of the first plasma step is when the first plasma step has generated a first predetermined result; And Monitoring the performing step to confirm the occurrence of the first endpoint Including, Here, the monitoring step includes using a first technology, wherein the first technology, Optically of the plasma in the processing chamber within a first wavelength range of about 250 nanometers to about 1000 nanometers and at least every 1 nanometer over the first wavelength range at at least a plurality of different time points during the performing step. Obtaining an emission; Comparing the optical emission at each of the plurality of different viewpoints with a first output; And Determining when the optical emission from at least one of the plurality of different views is within a predetermined amount of the first output, and equalizing it with the first output Plasma treatment monitoring method. 88. The method of claim 87, The plasma process is selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation and a verification wafer operation performed on at least one product in the processing chamber. Plasma treatment monitoring method. 88. The method of claim 87, The interval between each pair of adjacent wavelengths from the acquiring step is selected from the group consisting of a combination of equal intervals, unequal intervals, and identical intervals and unequal intervals. Plasma treatment monitoring method. 88. The method of claim 87, The optical emission at each of the plurality of different viewpoints has an associated pattern, the first output has a first output pattern, and the comparing step includes the pattern of optical emission at each of the plurality of different viewpoints. And comparing the first output pattern with the predetermined amount of the determining step such that the first output pattern matches the pattern of the optical emission from at least one of the plurality of different viewpoints. To define when it becomes Plasma treatment monitoring method. 88. The method of claim 87, The first output of the comparing step includes the optical emission from a time earlier than the plurality of different time points from the acquiring step. Plasma treatment monitoring method. 92. The method of claim 91 wherein The first output of the comparing step is the optical emission from a point in time immediately preceding the obtaining step. Plasma treatment monitoring method. 88. The method of claim 87, The first output of the comparing step is obtained from a previous execution of the same performing step in the same processing chamber. Plasma treatment monitoring method. 94. The method of claim 93, The first output is stored in a computer-readable storage medium. Plasma treatment monitoring method. 88. The method of claim 87, The monitoring step includes using a second technique different from the first technique, wherein the first endpoint is identifiable by at least one of the first and second techniques. Plasma treatment monitoring method. 97. The method of claim 95, The second technique comprises determining when there is at least a first change in impedance of the processing chamber and evaluating at least one individual wavelength of the plasma in the processing chamber at at least a number of points during the performing step. Selected from the group consisting of Plasma treatment monitoring method. 97. The method of claim 95, The second technique is to determine when there is at least a first change in the impedance of the processing chamber, the plasma in the processing chamber at at least a number of points in time during the performing step in relation to a match to a predetermined function. Evaluating at least one individual wavelength of and evaluating at least one individual wavelength of the plasma in the processing chamber at at least a plurality of time points during the performing step with respect to the output of the at least one derivative of the predetermined function. Selected from a group of steps Plasma treatment monitoring method. 88. The method of claim 87, Evaluating the condition of the plasma in the processing chamber during the performing step, wherein the condition is a cumulative result of all parameters affecting the plasma in the processing chamber. Plasma treatment monitoring method further comprising. 88. The method of claim 87, The determining step includes determining a difference between the optical emission and the first output at each of the plurality of viewpoints, wherein the predetermined amount is when the difference has no substantial peak. Plasma treatment monitoring method. 88. The method of claim 87, The plasma treatment further comprises a second plasma step, The method, Performing the second plasma step after performing the first plasma step, wherein the second plasma step occurs when the second plasma step produces a predetermined second result that is different from the predetermined first result. A second endpoint exists; Monitoring said performing step of said second plasma step to confirm the occurrence of said second endpoint; And Terminating the generating step when the first and second endpoints are identified. Plasma treatment monitoring method. 10. A plasma monitoring system for plasma processing performed in a processing chamber, wherein the plasma processing comprises a first plasma step, wherein the first endpoint of the first plasma step is when a predetermined first result is realized. The system comprises a computer-readable storage medium, The storage medium, A first output associated with at least a portion of one of the first plasma steps, wherein the first output is data indicative of an optical emission from the processing chamber during execution of one of the first plasma steps in the processing chamber; The optical emission is in a first wavelength range of about 250 nanometers to about 1000 nanometers, and at least every nanometer within the first wavelength range; And Means for ascertaining when the first endpoint has occurred for the current first plasma stage, wherein the means for identifying comprises a first technique Including, Here, the first technique, Data representative of the optical emission of the plasma in the processing chamber at least at various different points in time during the current first plasma step and at least every 1 nanometer in the first wavelength range and at least every 1 nanometer within the first wavelength range. Means for receiving; Means for comparing the optical emission at each of the plurality of different viewpoints with the first output; And Determining when the optical emission from at least one of the plurality of different viewpoints is within a predetermined amount of the first output that is considered to have reached the first endpoint for the current first plasma stage. Comprising means for Plasma monitoring system. 102. The method of claim 101, wherein The plasma process is selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation and a verification wafer operation performed on at least one product in the processing chamber. Plasma monitoring system. 102. The method of claim 101, wherein The means for determining comprises obtaining a difference between the optical emission and the first output at each of the plurality of viewpoints, wherein the predetermined amount is when the difference is free of any substantial peaks. Plasma monitoring system. 102. The method of claim 101, wherein The optical emission at each of the plurality of different viewpoints has an associated pattern, the first output has a first output pattern, and the means for comparing the pattern of the optical emission at each of the plurality of different viewpoints. Means for comparing with said first output pattern, wherein said predetermined amount of said determining means is such that said pattern of said optical emission from at least one of said plurality of different viewpoints is at least substantially equal to said first output pattern; To define when matching Plasma monitoring system. 102. The method of claim 101, wherein The first output includes the optical emission from a time earlier than the plurality of different time points from the current first plasma stage. Plasma monitoring system. 105. The method of claim 105, The first output is the optical emission from a point in time immediately preceding the current first plasma stage. Plasma monitoring system. 102. The method of claim 101, wherein The first output is obtained from the execution of the first plasma step before the current first plasma step. Plasma monitoring system. 102. The method of claim 101, wherein The checking means comprises a second technology different from the first technology, the first endpoint being identifiable by at least one of the first and second technologies. Plasma monitoring system. 109. The method of claim 108, The second technique further comprises means for determining when there is at least a first change in impedance of the processing chamber and at least one individual of the plasma in the processing chamber at at least a number of points during the current first plasma step. Selected from the group consisting of means for evaluating wavelength Plasma monitoring system. 109. The method of claim 108, The second technique further comprises means for determining when there is at least a first change in impedance of the processing chamber, the processing at least at a plurality of time points during the current first plasma phase in terms of matching with a predetermined function. Means for evaluating at least one individual wavelength of the plasma in the chamber, and at least a plurality of time points during the current first plasma stage in relation to the output of the at least one derivative of the predetermined function Selected from the group consisting of means for evaluating at least one individual wavelength of Plasma monitoring system. 102. The method of claim 101, wherein The computer-readable storage medium includes: Conditions of the plasma during the current first plasma stage from data relating to the current first plasma stage provided to the receiving means, where the conditions are cumulative results of all parameters affecting the plasma in the processing chamber. Further means for accessing Plasma monitoring system. 102. The method of claim 101, wherein The plasma processing comprises a second plasma step that is different from the first plasma step, the second endpoint of the second plasma step is when a predetermined second result of the second plasma step is realized, The computer-readable storage medium includes: A second output associated with at least a portion of one of the second plasma steps, wherein the second output is data indicative of an optical emission from the processing chamber during execution of one of the second plasma steps in the processing chamber, The optical emission is at least in the first wavelength range and at least every nanometer in the first wavelength range; And Means for confirming the occurrence of the second endpoint for the current second plasma stage. Plasma monitoring system. Plasma processing in a processing chamber, wherein the plasma processing comprises a first plasma step, and wherein the first endpoint of the first plasma step is when a predetermined first result of the first plasma step is realized. In the system, Processing chamber; A first gas inlet and a first gas outlet fluidly interconnected with the processing chamber; A plasma generator in the processing chamber, wherein the first plasma step may be executed in the processing chamber after activation of the plasma generator; And Computer-readable storage media Including, The computer-readable storage medium includes: A first output associated with at least a portion of one of the first plasma steps, wherein the first output is data indicative of an optical emission from the processing chamber during execution of one of the first plasma steps in the processing chamber, The optical emission is in the first wavelength range of about 250 nanometers to about 1000 nanometers, and at least every one nanometer in the first wavelength range; And Means for ascertaining when the first endpoint has occurred during the current first plasma phase, wherein the means for identifying comprises a first technique; Here, the first technique, Receive data indicative of the optical emission of the plasma in the processing chamber at least every one nanometer within the first wavelength range, at least at a plurality of different time points during the current first plasma step, within the first wavelength range. Means for doing so; Means for comparing the optical emission at each of the plurality of different viewpoints with the first output; And Determining when the optical emission from at least one of the plurality of different viewpoints is within a predetermined amount of the first output that is considered to have reached the first endpoint for the current first plasma stage. Comprising means for system. In the method of monitoring plasma processing, Loading a large amount of product into the processing chamber; Performing plasma processing on the article in the processing chamber, wherein the processing chamber comprises a window; Acquiring data relating to the plasma processing through the window, wherein the acquiring step is executed at at least a plurality of time points during the performing step; Monitoring the condition of the window in addition to the acquiring; And Evaluating the performing step using the obtaining step and the monitoring step Plasma treatment monitoring method comprising a. 116. The method of claim 114, wherein The loading step includes loading at least one wafer into the processing chamber. Plasma treatment monitoring method. 116. The method of claim 114, wherein The acquiring step includes acquiring optical emission of plasma in the processing chamber during the performing step. Plasma treatment monitoring method. 116. The method of claim 114, wherein The monitoring step is terminated during execution of the performing step Plasma treatment monitoring method. 116. The method of claim 114, wherein The monitoring step is executed only at one of the first and second time points, wherein the first time point is before the execution of the performing step, and the second time point is after the execution of the performing step. Plasma treatment monitoring method. 116. The method of claim 114, wherein The monitoring step includes accessing first data independent of any data related to plasma in the processing chamber during the performing step. Plasma treatment monitoring method. 116. The method of claim 114, wherein The window includes an inner surface exposed to the performing step and an outer surface isolated from the performing step, wherein the monitoring step includes: Directing calibration light towards the window from a location external to the processing chamber; Reflecting a first portion of the correction light from the inner surface of the window; And Comparing the correction light from the directing step with the first portion of the correction light from the reflecting step; Plasma treatment monitoring method. 124. The method of claim 120, The comparing step includes comparing the spectral pattern of the corrected light from the directing step with the spectral pattern of the first portion of the corrected light from the reflecting step. Plasma treatment monitoring method. 128. The method of claim 121, wherein The spectral pattern of the correction light from the directing step is in a first range including a wavelength of at least about 200 nanometers to about 1000 nanometers, and the spectral pattern of the first portion of the correction light from the reflecting step Is at least within the first range, The comparing step comprises using the wavelength resolution not exceeding about 1 nanometer to intensify the spectral pattern of the corrected light from the directing step with the intensity of the spectral pattern of the first portion of the corrected light from the reflecting step. Comparing, wherein the wavelength resolution means that the wavelength spacing between each adjacent pair of wavelengths being compared over the first range does not exceed about 1 nanometer. Plasma treatment monitoring method. 124. The method of claim 120, The comparing step includes noting a difference between the correction light from the directing step and the first portion of the correction light from the reflecting step. Plasma treatment monitoring method. 124. The method of claim 120, The comparing step includes comparing the intensity of the correction light from the directing step with an intensity associated with the first portion of the correction light from the reflecting step. Plasma treatment monitoring method. 121. The method of claim 120, wherein The comparing step includes calculating a maximum amount of the corrected light from the directing step that can be reflected by the inner surface of the window. Plasma treatment monitoring method. 124. The method of claim 120, Reflecting a second portion of the correction light from the outer surface of the window; And Prohibiting the second portion of the correction light from affecting the comparing step Plasma treatment monitoring method further comprising. 124. The method of claim 120, The comparing step includes determining whether one of a first and a second type of intensity shift exists between the correction light from the directing step and the first portion of the correction light from the reflecting step. Containing Plasma treatment monitoring method. 127. The method of claim 127, wherein The evaluating step includes calculating the first type of intensity shift identified by the determining step by implementing a single correction factor. Plasma treatment monitoring method. 131. The method of claim 128, The calculating step includes applying the single correction factor to the data from the obtaining step at each of the plurality of time points. Plasma treatment monitoring method. 127. The method of claim 127, wherein The evaluating step includes calculating the second type of intensity shift identified by the determining step by implementing a plurality of correction factors. Plasma treatment monitoring method. 131. The method of claim 130, The calculating step includes applying each of the plurality of correction factors to different portions of the data from the obtaining step at each of the plurality of time points. Plasma treatment monitoring method. The method of claim 131, wherein A first coefficient of the plurality of correction coefficients is applied to the data indicative of an optical emission from the performing step within a first wavelength region, and a second coefficient of the plurality of correction coefficients is outside the first wavelength region Applied to the data representative of the optical emission from the performing step in a second wavelength region Plasma treatment monitoring method. 127. The method of claim 127, wherein The evaluating step computes the intensity shift of the second form identified by the judging step by normalizing data representing the optical emission from the performing step at each of the plurality of time points for the obtaining step. Comprising the steps of Plasma treatment monitoring method. 124. The method of claim 120, The comparing step includes performing a first determining step comprising determining whether the window is filtering the optical emission associated with the performing step within a first wavelength range. Plasma treatment monitoring method. 135. The method of claim 134, The evaluating step includes ignoring the optical emission in the first wavelength range when the filtration is confirmed by the performing step of the first judging step. Plasma treatment monitoring method. 135. The method of claim 134, The comparing step, Identifying a plurality of intensity peaks in the correction light from the directing step; And Performing a second determining step comprising determining when the peak from the identifying step is at least substantially free of the first portion of the corrected light from the reflecting step, defining the first wavelength region; Containing Plasma treatment monitoring method. 135. The method of claim 134, Recommending replacing the window when the filtration is confirmed by performing the first judging step. Plasma treatment monitoring method further comprising. 124. The method of claim 120, The comparing step includes determining whether there is at least one of an intensity shift and a wavelength shift between the correction light from the directing step and the first portion of the correction light from the reflecting step. Plasma treatment monitoring method. 116. The method of claim 114, wherein The window includes an inner surface exposed to the performing step and an outer surface isolated from the performing step, wherein the monitoring step includes: Performing a first correction step; And Performing a second correction step, The first correction step, Directing first correction light towards the window from a location external to the processing chamber; Reflecting a first portion of the first correction light from the inner surface of the window; And Comparing the first correction light from the step of directing the first correction light with the first portion of the first correction light from the reflecting step of the first portion of the first correction light; The second correction step, Directing a second correction light toward the window from a location external to the processing chamber, wherein the second correction light is different from the first correction light; Reflecting a first portion of the second correction light from the inner surface of the window; And Comparing the second correction light from the step of directing the second correction light with the first portion of the second correction light from the reflecting step of the first portion of the second correction light. Plasma treatment monitoring method. 143. The method of claim 139, Performing the first correction step includes calculating a wavelength shift associated with the acquisition step, and performing the second correction step includes calculating an intensity shift associated with the acquisition step. Plasma treatment monitoring method. 141. The method of claim 140, The first correction light includes a plurality of discrete intensity peaks, and the second correction light includes a continuum of intensity. Plasma treatment monitoring method. 143. The method of claim 139, The first correction light includes a plurality of discrete intensity peaks, and the second correction light includes a continuum of intensity. Plasma treatment monitoring method. 143. The method of claim 139, The performing of the first correcting step and the performing of the second correcting step are executed at different non-overlapping times. Plasma treatment monitoring method. 116. The method of claim 114, wherein The data from the acquiring step comprises an optical emission comprising a wavelength within a first wavelength range of at least about 200 nanometers to about 100 nanometers, wherein the monitoring step comprises: Determining whether the window is filtering the optical emission in a first wavelength range comprised within the first wavelength range. Plasma treatment monitoring method. 116. The method of claim 114, wherein The data from the acquiring step comprises an optical emission comprising a wavelength within a first wavelength range of at least about 200 nanometers to about 100 nanometers, wherein the monitoring step comprises: The window has a first damping effect for a first wavelength range within the first wavelength range and a second buffering effect for a second wavelength range within the first wavelength range and outside the first wavelength range. Determining whether it has Plasma treatment monitoring method. 116. The method of claim 114, wherein Ascertaining the effect of the obtaining step by deposits formed on the inner surface of the window, wherein the identifying step uses the monitoring step Plasma treatment monitoring method further comprising. 116. The method of claim 114, wherein Performing at least one adjustment associated with the evaluation step based on the monitoring step Plasma treatment monitoring method further comprising. In the method of monitoring plasma processing, Loading a large amount of product into the processing chamber; Performing plasma processing on the product in the processing chamber, wherein the processing chamber comprises a window, the window comprising an inner surface exposed to the performing step and an outer surface isolated from the performing step; Acquiring data relating to the plasma processing through the window, wherein the acquiring step is executed at at least a plurality of time points during the performing step; Monitoring the window; And Evaluating the performing step using the obtaining step and the monitoring step Including, The monitoring step, Directing correction light towards the window from a location external to the processing chamber; Reflecting a first portion of the correction light from the inner surface of the window; And Comparing the correction light from the directing step with the first portion of the correction light from the reflecting step; Plasma treatment monitoring method. The method of claim 148, wherein The loading step includes loading at least one wafer into the processing chamber. Plasma treatment monitoring method. The method of claim 148, wherein The acquiring step includes acquiring optical emission of plasma in the processing chamber during the performing step. Plasma treatment monitoring method. The method of claim 148, wherein The monitoring step includes monitoring the condition of the window in addition to the acquiring step. Plasma treatment monitoring method. The method of claim 148, wherein The monitoring step is terminated during execution of the performing step Plasma treatment monitoring method. The method of claim 148, wherein The monitoring step is executed only at one of the first and second time points, wherein the first time point is before the execution of the performing step, and the second time point is after the execution of the performing step. Plasma treatment monitoring method. The method of claim 148, wherein The monitoring step includes accessing first data independent of any data related to plasma in the processing chamber during the performing step. Plasma treatment monitoring method. The method of claim 148, wherein The comparing step includes comparing the spectral pattern of the corrected light from the directing step with the spectral pattern of the first portion of the corrected light from the reflecting step. Plasma treatment monitoring method. 175. The method of claim 155, The spectral pattern of the correction light from the directing step is in a first range including a wavelength of at least about 200 nanometers to about 1000 nanometers, and the spectral pattern of the first portion of the correction light from the reflecting step Is at least within the first range, The comparing step comprises intensifying the spectral pattern of the corrected light from the directing step at least about every nanometer over the first range with the intensity of the spectral pattern of the first portion of the corrected light from the reflecting step. Comprising comparing Plasma treatment monitoring method. The method of claim 148, wherein The comparing step includes taking note of the difference between the correction light from the directing step and the first portion of the correction light from the reflecting step. Plasma treatment monitoring method. The method of claim 148, wherein The comparing step includes comparing the intensity of the correction light from the directing step with an intensity associated with the first portion of the correction light from the reflecting step. Plasma treatment monitoring method. The method of claim 148, wherein The comparing step includes calculating a maximum amount of the corrected light from the directing step that can be reflected by the inner surface of the window. Plasma treatment monitoring method. The method of claim 148, wherein Reflecting a second portion of the correction light from the directing step using the outer surface of the window; And Inhibiting the second portion of the correction light from affecting the comparing step Plasma treatment monitoring method further comprising. The method of claim 148, wherein The comparing step includes determining whether one of a first and a second type of intensity shift exists between the corrected light from the directing step and the first portion of the corrected light from the reflecting step; Way, Evaluating the performing step by using the acquiring step and the monitoring step; Plasma treatment monitoring method. 161. The method of claim 161, The evaluating step includes calculating the first type of intensity shift identified by the comparing step by implementing a single correction factor. Plasma treatment monitoring method. 162. The method of claim 162 wherein The calculating step includes applying the single correction factor to the data from the obtaining step used by the evaluation step. Plasma treatment monitoring method. 161. The method of claim 161, The evaluating step includes calculating the second type of intensity shift identified by the comparing step by implementing a plurality of correction factors. Plasma treatment monitoring method. 175. The method of claim 164 wherein The calculating step includes applying each of the plurality of correction factors to different portions of the data from the obtaining step used by the evaluation step. Plasma treatment monitoring method. 167. The method of claim 165 wherein A first coefficient of the plurality of correction coefficients is applied to the data indicative of an optical emission from the performing step within a first wavelength region, and a second coefficient of the plurality of correction coefficients is outside the first wavelength region Applied to the data representative of the optical emission from the performing step in a second wavelength region Plasma treatment monitoring method. 161. The method of claim 161, Wherein said evaluating step includes calculating said second type of intensity shift identified by said comparing step through normalizing data indicative of optical emission from said performing step utilized by said evaluating step. Plasma treatment monitoring method. The method of claim 148, wherein The comparing step includes performing a first determining step comprising determining whether the window is filtering the optical emission from the performing step in the first wavelength range. Plasma treatment monitoring method. 168. The method of claim 168, Evaluating the performing step by using the acquiring step and the monitoring step; The evaluating step includes ignoring the optical emission in the first wavelength range when the filtration is confirmed by the performing step of the first judging step. Plasma treatment monitoring method. 168. The method of claim 168, The comparing step, Identifying a plurality of intensity peaks in the correction light from the directing step; And Performing a second determining step comprising determining when the peak from the identifying step is at least substantially free of the first portion of the corrected light from the reflecting step, defining the first wavelength region; Containing Plasma treatment monitoring method. 168. The method of claim 168, Recommending replacing the window when the filtration is confirmed by performing the first judging step. Plasma treatment monitoring method further comprising. The method of claim 148, wherein The directing step may be directed from the position outside of the processing chamber towards the window and the second correction from the position outside of the processing chamber toward the window. Directing light, The reflecting step includes reflecting a first portion of the first correction light from the inner surface of the window and reflecting a first portion of the second correction light from the inner surface of the window, And the comparing step compares the first correction light from directing the first correction light to the first portion of the first correction light from reflecting the first portion of the first correction light and the Comparing the second correction light from the step of directing second correction light to the first portion of the second correction light from reflecting the first portion of the second correction light. Plasma treatment monitoring method. 172. The method of claim 172 Directing the first correction light, reflecting the first portion of the first correction light, and comparing the first correction light collectively include performing a first correction step; Performing one correction step calculates a wavelength shift associated with the acquisition step, Directing the second correction light, reflecting the first portion of the second correction light, and comparing the second correction light collectively include performing a second correction step; The performing step of the two correcting steps is to calculate the intensity shift associated with the Plasma treatment monitoring method. 172. The method of claim 173, wherein The first correction light includes a plurality of discrete intensity peaks, and the second correction light includes a continuum of intensity. Plasma treatment monitoring method. 172. The method of claim 173, wherein The performing of the first correcting step and the performing of the second correcting step are executed at different non-overlapping times. Plasma treatment monitoring method. 172. The method of claim 172 The first correction light includes a plurality of discrete intensity peaks, and the second correction light includes a continuum of intensity. Plasma treatment monitoring method. The method of claim 148, wherein Ascertaining the effect of the obtaining step by means of a precipitate formed on the inner surface of the window, wherein the identifying step uses the monitoring step Plasma treatment monitoring method further comprising. The method of claim 148, wherein Evaluating the performing step using the obtaining step and the monitoring step; And Performing at least one adjustment associated with the evaluation step based on the monitoring step Plasma treatment monitoring method further comprising. In the plasma processing system, A processing chamber comprising a window, wherein the window comprises an inner surface exposed to plasma processing performed in the chamber and an outer surface isolated from the plasma processing; A plasma generator in the processing chamber, wherein the plasma processing may be performed in the processing chamber when the plasma generator is activated; A first spectrometer assembly disposed outside the processing chamber; A first fiber optic cable assembly operatively interconnecting said first spectrometer assembly and said window; A correction light source disposed outside the processing chamber and including correction light; A second optical fiber cable assembly operatively interconnecting said correction light source and said window; And A comparator operably interconnected with the first spectrometer assembly, wherein the first input to the comparator is data associated with the correction light transmitted by the correction light source to the window through the second fiber optic cable assembly; And the second input to the comparator is data associated with the first portion of the correction light reflected by the inner surface of the window and provided to the first spectrometer assembly through the first fiber optic cable assembly. Plasma processing system comprising a. 179. The method of claim 179, The first spectrometer assembly is selected from the group consisting of at least one scanning-type spectrometer and at least one solid state spectrometer. Plasma processing system. 179. The method of claim 179, The first spectrometer assembly comprises a plurality of spectrometers, each spectrometer covering a different wavelength region Plasma processing system. 179. The method of claim 179, The window includes a first location and a second location spaced from the first location, the thickness of the window being reflected by the window such that the first optical fiber for use by the first spectrometer assembly and the comparator Varying the progression from the first position to the second position to limit the portion of the correction light collected by the cable assembly to the first portion of the correction light. Plasma processing system. 179. The method of claim 179, A first end of each of the first and second fiber optic cable assemblies is disposed coaxially and the inner surface of the window is in the axis of light entering and exiting the second fiber optic cable assembly and the first end of the first fiber optic cable assembly. At least substantially perpendicular, the outer surface of the window being disposed at an angle that is not perpendicular to the axis of light entering and exiting the second fiber optic cable assembly and the first end of the first fiber optic cable assembly, all of which are Limiting the portion of the correction light reflected by the window to be collected by the first optical fiber cable assembly for use by the first spectrometer assembly and the comparator to the first portion of the correction light. Plasma processing system. 179. The method of claim 179, The inner surface and the outer surface of the window are reflected by the window to reflect the portion of the correction light collected by the first fiber optic cable assembly for use by the first spectrometer assembly and the comparator to the first portion of the correction light. Placed in a relationship other than parallel to limit to Plasma processing system. 179. The method of claim 179, The window is at least generally wedge-shaped Plasma processing system. 179. The method of claim 179, A first end of the second fiber optic cable assembly facing the window is a first end of the first fiber optic cable assembly facing the window to receive the first portion of the correction light reflected by the inner surface of the window. Disposed coaxially with the end Plasma processing system. 186. The method of claim 186, The inner surface and the outer surface of the window are disposed in a relationship other than parallel relationship, the system, Means for maintaining each first end of the first and second fiber optic cable assemblies in a fixed positional relationship with respect to the window; The correction light from the correction light source passing through the second fiber optic cable assembly directs at least substantially all of the correction light reflected by the outer surface of the window away from the first fiber optic cable assembly A portion of the correction light from the correction light source that impinges on the outer surface of the window at an angle other than perpendicular to and also impinges on the inner surface of the window impinges at least substantially perpendicular to the inner surface of the window, Thus directing the first portion of the correction light reflected by the inner surface of the window to the first optical fiber cable assembly for providing to the first spectrometer assembly for use by the comparator. Plasma processing system. 179. The method of claim 179, An axis of light exiting the second fiber optic cable assembly impinges the inner surface of the window at a first acute angle with respect to the inner surface, and one end of the first fiber optic cable assembly is reflected by the inner surface of the correction light. One end of the second fiber optic cable assembly arranged to collect the first portion, thereby directing the correction light to the window, the first portion receiving the first portion of the correction light reflected by the window Disposed opposite the reference plane across the window, unlike the end of the optical fiber cable assembly Plasma processing system. 179. The method of claim 179, The comparator comprises means for comparing the pattern of correction light transmitted to the window with a pattern of the first portion of the correction light reflected by the inner surface of the window Plasma processing system. 179. The method of claim 179, A plasma monitoring assembly comprising the first spectrometer assembly and operably interconnected with the window; And Means for performing at least one adjustment associated with the plasma monitoring assembly based on the output from the comparator Plasma processing system further comprising. 179. The method of claim 179, At least a portion of the outer surface of the window includes an anti-reflective coating aligned with the second fiber optic cable assembly. Plasma processing system. 179. The method of claim 179, The correction light source includes a first correction light source and a second correction light source, wherein the first correction light source includes light of a different type from the second correction light source. Plasma processing system. 192. The method of claim 192, The first correction light source includes a first correction light including a plurality of discrete intensity peaks, and the second correction light source includes a second correction light including a continuum of intensity. Plasma processing system. 192. The method of claim 192, The first correction light source is used to confirm the wavelength shift, and the second correction light source is used to confirm the intensity shift. Plasma processing system. 179. The method of claim 179, The system further comprises an optical fiber cable fixture assembly, The fastener assembly includes a recess region that interfaces with at least a portion of the outer surface of the window and a first port extending through the fixture assembly to intersect the recess region, the recess region being defined; At least a portion of the fixture assembly comprises a light absorbing material, wherein the first ends of the first and second fiber optic cable assemblies are attached to the fixture assembly in axial alignment with the first port and the window is A reference axis projecting from the first end of the first and second optical fiber cable assemblies toward and intersecting with the outer surface of the window at an angle other than at right angles, and intersecting with the inner surface of the window at least substantially perpendicularly. Plasma processing system. 196. The method of claim 195, The first ends of the first and second fiber optic cable assemblies are coaxially disposed and threadably interconnected with the fixture assembly. Plasma processing system. In the plasma processing system, A processing chamber comprising a window, wherein the window comprises an inner surface exposed to plasma processing performed in the chamber and an outer surface isolated from the plasma processing; A plasma generator in the processing chamber, wherein the plasma processing may be performed in the processing chamber when the plasma generator is activated; A first spectrometer assembly disposed outside the processing chamber; A first fiber optic cable assembly operatively interconnecting said first spectrometer assembly and said window; A correction light source disposed outside the processing chamber and including correction light; And A second optical fiber cable assembly operatively interconnecting said correction light source and said window, wherein said inner and outer surfaces of said window on said processing chamber are respectively interference between portions of said correction light reflected by said inner and outer surfaces; Placed in a relationship other than parallel to reduce Plasma processing system comprising a. 197. The method of claim 197, wherein The first spectrometer assembly is selected from the group consisting of at least one scanning-type spectrometer and at least one solid state spectrometer Plasma processing system. 197. The method of claim 197, wherein The first spectrometer assembly comprises a plurality of spectrometers, each spectrometer covering a different wavelength region Plasma processing system. 197. The method of claim 197, wherein The window includes a first position and a second position spaced from the first position, the thickness of the window being reflected by the window to the first optical fiber cable assembly for use by the first spectrometer assembly. Varying the progression from the first position to the second position to limit the portion of the correction light collected by the portion of the correction light reflected by the inner surface of the window. Plasma processing system. 197. The method of claim 197, wherein A first end of each of the first and second fiber optic cable assemblies is disposed coaxially and the inner surface of the window is in the axis of light entering and exiting the second fiber optic cable assembly and the first end of the first fiber optic cable assembly. At least substantially perpendicular, the outer surface of the window being disposed at an angle that is not perpendicular to the axis of light entering and exiting the second fiber optic cable assembly and the first end of the first fiber optic cable assembly, all of which are Limiting the portion of the correction light reflected by the window and collected by the first fiber optic cable assembly for use by the first spectrometer assembly to the portion of the correction light reflected by the inner surface of the window. Plasma processing system. 197. The method of claim 197, wherein The window is at least generally wedge-shaped Plasma processing system. 197. The method of claim 197, wherein A first end of the second fiber optic cable assembly facing the window is coaxial with a first end of the first fiber optic cable assembly facing the window to receive a portion of the correction light reflected by the inner surface of the window. Posted by Plasma processing system. 203. The method of claim 203, wherein Means for maintaining each of said first ends of said first and second fiber optic cable assemblies in a fixed positional relationship with respect to said window; The correction light from the correction light source passing through the second fiber optic cable assembly directs at least substantially all of the correction light reflected by the outer surface of the window away from the first fiber optic cable assembly A portion of the correction light from the correction light source that impinges on the outer surface of the window at an angle other than perpendicular to and also impinges on the inner surface of the window impinges at least substantially perpendicular to the inner surface of the window, Thus directing at least a portion of the correction light reflected by the inner surface of the window to the first optical fiber cable assembly for providing to the first spectrometer assembly. Plasma processing system. 197. The method of claim 197, wherein An axis of light exiting the second optical fiber cable assembly impinges the inner surface of the window at a first acute angle relative to the inner surface, and one end of the first optical fiber cable assembly collects at least a portion of the correction light reflected by the inner surface One end of the second optical fiber cable assembly arranged to receive the correction light toward the window, the one end of the first optical fiber cable assembly receiving the at least a portion of the correction light reflected by the inner surface of the window. Unlike the end portion, which is disposed opposite to the reference plane crossing the window Plasma processing system. 197. The method of claim 197, wherein Further comprising a comparator operably interconnected with the first spectrometer assembly, Wherein the first input to the comparator is data associated with the correction light transmitted by the correction light source to the window via the second fiber optic cable assembly, and the second input to the comparator is on the inner surface of the window. Data associated with the first portion of the correction light reflected by and provided to the first spectrometer assembly through the first optical fiber cable assembly Plasma processing system. 206. The method of claim 206, The comparator comprises means for comparing the pattern of correction light transmitted to the window with a pattern of the first portion of the correction light reflected by the inner surface of the window Plasma processing system. 206. The method of claim 206, A plasma monitoring assembly comprising the first spectrometer assembly and operably interconnected with the window; And Means for performing at least one adjustment associated with the plasma monitoring assembly based on the output from the comparator Plasma processing system further comprising. 197. The method of claim 197, wherein At least a portion of the outer surface of the window includes an antireflective coating aligned with the second optical fiber cable assembly, through which the correction light exits the second optical fiber cable assembly. Plasma processing system. 197. The method of claim 197, wherein The correction light source includes a first correction light source and a second correction light source, wherein the first correction light source includes light of a different type from the second correction light source. Plasma processing system. 213. The method of claim 210, The first correction light source includes a first correction light including a plurality of discrete intensity peaks, and the second correction light source includes a second correction light including a continuum of intensity. Plasma processing system. 213. The method of claim 210, The first correction light source is used to confirm the wavelength shift, and the second correction light source is used to confirm the intensity shift. Plasma processing system. 197. The method of claim 197, wherein The system further comprises an optical fiber cable fixture assembly, The fixture assembly includes a recess region that interfaces with at least a portion of the outer surface of the window and a first port extending through the fixture assembly to intersect the recess region, the fixture assembly defining the recess region. At least a portion of the substrate includes a light absorbing material, wherein the first ends of the first and second fiber optic cable assemblies are attached to the fixture assembly in axial alignment with the first port and toward the window. And a reference axis protruding from the first end of the second fiber optic cable assembly intersects the outer surface of the window at an angle other than right angle and intersects the inner surface of the window at least substantially perpendicularly. Plasma processing system. The method of claim 213, wherein The first ends of the first and second fiber optic cable assemblies are coaxially disposed and threadedly interconnected with the fixture assembly. Plasma processing system. In the plasma processing system, A processing chamber comprising a window, wherein the window comprises an inner surface exposed to plasma processing performed in the chamber and an outer surface isolated from the plasma processing; Means for generating plasma in the processing chamber to perform the plasma processing in the processing chamber; Means for obtaining an optical emission of the plasma in the chamber that is emitted through the window during the plasma processing; Means for evaluating the plasma processing through the output from the acquiring means; And A calibration assembly operatively interconnected with said evaluation means Including, The correction assembly, Means for directing correction light into the window; Means for comparing the portion of the correction light reflected by the window with the correction light from the means for directing; And Means for limiting said portion of said correction light used by said comparing means to a portion of said correction light from said means for directing reflected by said inner surface of said window; Plasma processing system. 215. The method of claim 215, The acquiring means comprises at least one spectrometer Plasma processing system. 215. The method of claim 215, The evaluation means comprises means for comparing a pattern of the optical emission from the current plasma treatment with a pattern of a previous optical emission in time from at least one plasma treatment. Plasma processing system. 215. The method of claim 215, The limiting means impinge on the outer surface of the window at an angle other than perpendicular to the outer surface to direct at least substantially all of the correction light reflected by the outer surface of the window to be unavailable by the comparing means. And directing the correction light to the window such that a portion of the correction light impinges on the inner surface of the window to direct at least a portion of the correction light reflected by the inner surface of the window to be made available by the comparing means. Comprising means for directing Plasma processing system. 215. The method of claim 215, The comparing means comprises means for comparing the pattern of the correction light from the means for directing with the pattern of the portion of the correction light reflected by the window Plasma processing system. 215. The method of claim 215, The correction assembly comprises means for correcting the evaluation means for each of the first and second conditions, wherein the first condition is a wavelength shift associated with the optical emission used by the evaluation means, and the second The condition is an intensity shift associated with the optical emission used by the evaluation means. Plasma processing system. 215. The method of claim 215, The optical emission associated with the acquisition means is within a first wavelength range, and the correction assembly provides means for determining whether the window is filtering the optical emission within a first wavelength range comprised within the first wavelength range. More containing Plasma processing system. 215. The method of claim 215, The optical emission associated with the acquisition means is within a first wavelength range, and the correction assembly is within the first wavelength range and the first buffering effect for the first wavelength region where the window is within the first wavelength range. Means for determining whether there is a second buffering effect for a second wavelength region outside of the first wavelength region, wherein the first and second buffering effects are different. Plasma processing system. 215. The method of claim 215, The limiting means comprises an antireflective coating on at least a portion of the outer surface of the window. Plasma processing system. 215. The method of claim 215, The means for directing comprises means for directing first and second correction light to the window, the first correction light consisting of a different type of light than the second correction light. Plasma processing system. 224. The method of claim 224, The first correction light includes a plurality of discrete intensity peaks, and the second correction light includes a continuum of intensity. Plasma processing system. 253. The method of claim 225 wherein The first correction light source is used by the correction assembly to confirm the wavelength shift associated with the evaluation means, and the second correction light source is used by the correction assembly to confirm the intensity shift associated with the evaluation means. Plasma processing system. 215. The method of claim 215, The acquiring means comprises a first optical fiber cable assembly, the means for the compensating assembly comprises a second optical fiber cable assembly, the system further comprises an optical fiber cable fixture assembly, The fixture assembly includes a recess region that interfaces with at least a portion of the outer surface of the window and a first port extending through the fixture assembly to intersect the recess region, the fixture assembly defining the recess region. At least a portion of the substrate includes a light absorbing material, wherein the first ends of the first and second optical fiber cable assemblies are attached to the fastener assembly in axial alignment with the first port, the fastener assembly closing the window. With respect to the window such that a reference axis protruding from the first end of the first and second optical fiber cable assemblies intersects the outer surface of the window at an angle other than right angle and intersects the inner surface of the window at least substantially perpendicularly. Placed Plasma processing system. 226. The method of claim 227, The first ends of the first and second fiber optic cable assemblies are coaxially disposed and threadedly interconnected with the fixture assembly. Plasma processing system. In the method of monitoring plasma processing, Initiating a plasma monitoring assembly to obtain an optical emission of the plasma in the processing chamber during the plasma processing, wherein the optical emission is at least about 250 nanometers to about 1000 nanometers defining a first wavelength range. And at least every nanometer over the first wavelength range, wherein the processing chamber includes a window, and the plasma monitoring assembly is operatively interfaced with the window. Including, The initialization step, Directing correction light comprising a second wavelength range towards the window; Reflecting a first portion of the correction light from the window; Comparing the correction light from the directing step with the first portion of the correction light from the reflecting step over the second wavelength range; And Performing at least one adjustment in connection with the plasma monitoring assembly when the comparing step results in at least a first result. Plasma treatment monitoring method. The method of claim 229, wherein The second wavelength range is at least substantially the same as the first wavelength range Plasma treatment monitoring method. The method of claim 229, wherein The window comprises an inner surface and an outer surface, the inner surface is exposed to the plasma in the processing chamber, the outer surface is isolated from the plasma in the processing chamber, The reflecting step includes reflecting the first portion of the correction light from the inner surface of the window. Plasma treatment monitoring method. The method of claim 229, wherein The correction light from the directing step has a first pattern, the first portion of the correction light from the reflection step has a second pattern, The comparing step includes taking note of the difference in the second pattern with respect to the first pattern. Plasma treatment monitoring method. The method of claim 229, wherein The comparing step includes one of a first and second type of intensity shift between the corrected light from the directing step and the first portion of the corrected light from the reflecting step anywhere within the second wavelength range. Determining whether the first and second types of intensity shifts are different and include the first result. Plasma treatment monitoring method. 233. The method of claim 233 wherein Performing the at least one adjustment includes calculating the intensity shift of the first type identified by the comparing step by the plasma monitoring assembly implementing a single correction factor. Plasma treatment monitoring method. 245. The method of claim 234 The calculating step includes applying the single correction factor to data indicative of the optical emission. Plasma treatment monitoring method. 233. The method of claim 233 wherein Performing the at least one adjustment includes calculating, by the plasma monitoring assembly, the intensity shift of the second form identified by the comparing step by implementing a plurality of correction factors. Plasma treatment monitoring method. 238. The method of claim 236 The calculating step includes applying each of the plurality of correction factors to data representing different portions of the optical emission. Plasma treatment monitoring method. 237. The method of claim 237, A first one of the plurality of correction coefficients is applied to the data representing the optical emission in a first wavelength range within the first wavelength range, and a second one of the plurality of correction coefficients is within the first wavelength range And applied to data representative of the optical emission in a second wavelength region outside of the first wavelength region. Plasma treatment monitoring method. 233. The method of claim 233 wherein Performing the at least one adjustment includes calculating the second type of intensity shift identified by the comparing step through normalizing the data representing the optical emission. Plasma treatment monitoring method. The method of claim 229, wherein And the comparing step comprises performing a first determining step comprising determining whether the window is filtering the optical emission in a first wavelength range within the first wavelength range. Plasma treatment monitoring method. 240. The method of claim 240, Performing the at least one adjustment, Causing the plasma monitoring assembly to ignore data indicative of the optical emission in the first wavelength range when the filtration is confirmed by performing the first determining step. 240. The method of claim 240, The comparing step, Identifying a plurality of intensity peaks in the correction light from the directing step; And Performing a second determining step comprising determining when the peak from the identifying step is at least substantially free of the first portion of the corrected light from the reflecting step, defining the first wavelength region; Containing Plasma treatment monitoring method. 240. The method of claim 240, Recommending replacing the window when the filtration is confirmed by performing the first judging step. Plasma treatment monitoring method further comprising. The method of claim 229, wherein The comparing step includes determining whether there is at least one of an intensity shift and a wavelength shift between the corrected light from the directing step and the first portion of the corrected light from the reflecting step. Plasma treatment monitoring method. 245. The method of claim 244, The plasma monitoring assembly comprises a first spectrometer, and the determining step includes identifying an intensity shift in the optical emission caused by the window, wherein the identifying step uses the comparing step, Performing the at least one adjustment includes adjusting the output of the first spectrometer based on the intensity shift identified by the verifying step. Plasma treatment monitoring method. 245. The method of claim 244, The plasma monitoring assembly comprises a first spectrometer, and the determining step includes identifying a wavelength shift of at least about 0.25 nanometers in the optical emission caused by the first spectrometer, and identifying the The step uses the comparing step and the step of performing the at least one adjustment comprises the output of the first spectrometer and at least one component of the first spectrometer based on the wavelength shift identified by the checking step. Adjusting at least one of the Plasma treatment monitoring method. The method of claim 229, wherein Introducing the plasma into the processing chamber; Performing the plasma processing in the processing chamber; Monitoring the optical emission of the plasma in the processing chamber at least every nanometer at least within the first wavelength range and over the first wavelength range at least substantially throughout the performing step; Obtaining output from the monitoring step from a plurality of different time points during the performing step; And Comparing the output at each of the plurality of time points with a first output, wherein the output comparing step is performed after comparing the corrected light in response to performing the at least one adjustment. Plasma treatment monitoring method further comprising. 247. The method of claim 247 Wherein each output has an associated output pattern, the first output has a plurality of first output patterns, and the output comparing step includes comparing at least one of the respective output pattern and the first output pattern. doing Plasma treatment monitoring method. 247. The method of claim 247 The first output of the output comparing step includes at least one of the outputs from a time earlier than the plurality of different time points from the acquiring step Plasma treatment monitoring method. The method of claim 249, wherein The first output of the output comparing step is the output at a point in time immediately preceding the obtaining step. Plasma treatment monitoring method. 247. The method of claim 247 The first output of the output comparing step is obtained from a previous execution of the performing step in the processing chamber. Plasma treatment monitoring method. The method of claim 229, wherein The window includes an inner surface exposed to the plasma treatment performed in the chamber and an outer surface isolated from the plasma treatment, The directing step may be directed from the position outside of the processing chamber towards the window and the second correction from the position outside of the processing chamber toward the window. Directing light, wherein at least one of the first and second correction light includes the second wavelength range, The reflecting step includes reflecting a first portion of the first correction light from the inner surface of the window and reflecting a first portion of the second correction light from the inner surface of the window, And the comparing step compares the first correction light from directing the first correction light to the first portion of the first correction light from reflecting the first portion of the first correction light and the Comparing the second correction light from the step of directing second correction light to the first portion of the second correction light from reflecting the first portion of the second correction light. Plasma treatment monitoring method. 252. The method of claim 252, Directing the first correction light, reflecting the first portion of the first correction light, and comparing the first correction light collectively include performing a first correction step; Performing one calibration step calculates a wavelength shift associated with the plasma monitoring assembly, Directing the second correction light, reflecting the first portion of the second correction light, and comparing the second correction light collectively include performing a second correction step; Performing a second calibration step involves calculating an intensity shift associated with the plasma monitoring assembly. Plasma treatment monitoring method. 253. The method of claim 253, The first correction light includes a plurality of discrete intensity peaks, and the second correction light includes a continuum of intensity. Plasma treatment monitoring method. 253. The method of claim 253, The performing of the first correcting step and the performing of the second correcting step are executed at different non-overlapping times. Plasma treatment monitoring method. 252. The method of claim 252, The first correction light includes a plurality of discrete intensity peaks, the second correction light includes a continuum of intensity, The performing of the first correcting step and the performing of the second correcting step are executed at different non-overlapping times. Plasma treatment monitoring method. In the method of monitoring plasma processing, Initiating a plasma monitoring assembly to obtain an optical emission of the plasma in the processing chamber during the plasma processing, wherein the optical emission comprises a wavelength in a first wavelength range of at least about 250 nanometers to about 1000 nanometers; Wherein the processing chamber comprises a window and the plasma monitoring assembly is operatively interfaced with the window Including, The initialization step, Monitoring the window; Performing a first determining step comprising determining whether the window is filtering the optical emission within a first wavelength range comprised within the first wavelength range, wherein performing the first determining step comprises: -Use the monitoring phase; And Causing the plasma monitoring assembly to ignore the optical emission in the first wavelength range when the filtration is confirmed by performing the first determining step. Plasma treatment monitoring method. The method of claim 257 The monitoring step, Directing correction light comprising a second wavelength range towards the window; Reflecting a first portion of the correction light from the window; And Comparing the correction light from the directing step with the first portion of the correction light from the reflecting step over the second wavelength range. Plasma treatment monitoring method. The method of claim 258, wherein The second wavelength range is at least substantially the same as the first wavelength range Plasma treatment monitoring method. The method of claim 258, wherein The window comprises an inner surface and an outer surface, the inner surface is exposed to the plasma in the processing chamber, the outer surface is isolated from the plasma in the processing chamber, The reflecting step includes reflecting the first portion of the correction light from the inner surface of the window. Plasma treatment monitoring method. The method of claim 258, wherein The comparing step includes performing a first determination step, wherein the performing step of the first determination step includes: Identifying a plurality of intensity peaks in the correction light from the directing step; And Performing a second determining step comprising determining when the peak from the identifying step is at least substantially free of the first portion of the corrected light from the reflecting step, defining the first wavelength region; More containing Plasma treatment monitoring method. The method of claim 258, wherein The correction light includes a continuum of intensity, and the comparing step includes performing a first determination step, wherein the performing step of the first determination step includes: Performing a second determining step comprising determining which region in the first portion of the correction light from the reflecting step has at least substantially zero intensity defining the first wavelength region; Plasma treatment monitoring method. The method of claim 258, wherein The window includes an inner surface exposed to the plasma treatment performed in the chamber and an outer surface isolated from the plasma treatment, The directing step may be directed from the position outside of the processing chamber towards the window and the second correction from the position outside of the processing chamber toward the window. Directing light, wherein at least one of the first and second correction light includes the second wavelength range, The reflecting step includes reflecting a first portion of the first correction light from the inner surface of the window and reflecting a first portion of the second correction light from the inner surface of the window, And the comparing step compares the first correction light from directing the first correction light to the first portion of the first correction light from reflecting the first portion of the first correction light and the Comparing the second correction light from the step of directing second correction light to the first portion of the second correction light from reflecting the first portion of the second correction light. Plasma treatment monitoring method. 263. The method of claim 263, Directing the first correction light, reflecting the first portion of the first correction light, and comparing the first correction light collectively include performing a first correction step; Performing one calibration step calculates a wavelength shift associated with the plasma monitoring assembly, Directing the second correction light, reflecting the first portion of the second correction light, and comparing the second correction light collectively include performing a second correction step; Performing a second calibration step includes calculating an intensity shift associated with the plasma monitoring assembly and performing a first determination step. Plasma treatment monitoring method. 264. The method of claim 264 wherein The first correction light includes a plurality of discrete intensity peaks, and the second correction light includes a continuum of intensity. Plasma treatment monitoring method. 264. The method of claim 264 wherein The performing of the first correcting step and the performing of the second correcting step are executed at different non-overlapping times. Plasma treatment monitoring method. 263. The method of claim 263, The first correction light includes a plurality of discrete intensity peaks, the second correction light includes a continuum of intensity, The directing of the first and second correction lights is performed at different non-overlapping points of time. Plasma treatment monitoring method. The method of claim 257 Performing a second determination step comprising determining whether the window has a substantially constant buffering effect for a second wavelength region outside the first wavelength region within the first wavelength range; And Performing at least one adjustment in relation to the plasma monitoring assembly when the substantially constant buffering effect is confirmed by the performing of the second judging step Plasma treatment monitoring method further comprising. 268. The method of claim 268 Performing the at least one adjustment comprises the plasma monitoring assembly calculating the substantially constant buffering effect by implementing a single correction factor. Plasma treatment monitoring method. The method of claim 257 A first buffering effect for a second wavelength region outside said first wavelength range within said first wavelength range and a second outside said respective first and second wavelength range within said first wavelength range. Performing a second determining step comprising determining whether a second buffering effect is present in the three wavelength ranges; And Performing at least one adjustment in relation to the plasma monitoring assembly when the first and second buffering effects are confirmed by the performing of the second judging step Plasma treatment monitoring method further comprising. 270. The method of claim 270, Performing the at least one adjustment comprises applying a first correction factor to data representing the optical emission in the second wavelength region and a second correction to data representing the optical emission in the third wavelength region. Applying a coefficient Plasma treatment monitoring method. 270. The method of claim 270, Performing the at least one adjustment includes normalizing data indicative of the optical emission in the second and third wavelength ranges. Plasma treatment monitoring method. In the method of monitoring plasma processing, Initiating a plasma monitoring assembly to obtain an optical emission of the plasma in the processing chamber during the plasma processing, wherein the optical emission comprises a wavelength in a first wavelength range of at least about 250 nanometers to about 1000 nanometers; Wherein the processing chamber comprises a window and the plasma monitoring assembly is operatively interfaced with the window Including, The initialization step, Monitoring the window; A first buffering effect for a first wavelength region in which the window is in the first wavelength range within the first wavelength range and a second for a second wavelength region outside of the first wavelength range within the first wavelength range. Performing a first judging step comprising determining whether it has a buffering effect, wherein said performing step of said first judging step uses said monitoring step; And Performing at least one adjustment in relation to the plasma monitoring assembly when the first and second buffering effects are confirmed by the performing of the first determining step. Plasma treatment monitoring method. 272. The method of claim 273 wherein The monitoring step, Directing correction light comprising a second wavelength range towards the window; Reflecting a first portion of the correction light from the window; And Comparing the corrected light from the directing step to the first portion of the corrected light from the reflecting step over a second wavelength range; Plasma treatment monitoring method. 274. The method of claim 274 wherein The second wavelength range is at least substantially the same as the first wavelength range Plasma treatment monitoring method. 274. The method of claim 274 wherein The window comprises an inner surface and an outer surface, the inner surface is exposed to the plasma in the processing chamber, the outer surface is isolated from the plasma in the processing chamber, The reflecting step includes reflecting the first portion of the correction light from the inner surface of the window. Plasma treatment monitoring method. 274. The method of claim 274 wherein The window includes an inner surface exposed to the plasma treatment performed in the processing chamber and an outer surface isolated from the plasma treatment, The directing step may be directed from the position outside of the processing chamber towards the window and the second correction from the position outside of the processing chamber toward the window. Directing light, wherein at least one of the first and second correction light includes the second wavelength range, The reflecting step includes reflecting a first portion of the first correction light from the inner surface of the window and reflecting a first portion of the second correction light from the inner surface of the window, And the comparing step compares the first correction light from directing the first correction light to the first portion of the first correction light from reflecting the first portion of the first correction light and the Comparing the second correction light from the step of directing second correction light to the first portion of the second correction light from reflecting the first portion of the second correction light. Plasma treatment monitoring method. 278. The method of claim 277 wherein Directing the first correction light, reflecting the first portion of the first correction light, and comparing the first correction light collectively include performing a first correction step; Performing one calibration step calculates a wavelength shift associated with the plasma monitoring assembly, Directing the second correction light, reflecting the first portion of the second correction light, and comparing the second correction light collectively include performing a second correction step; Performing a second calibration step includes calculating an intensity shift associated with the plasma monitoring assembly and performing a first determination step. Plasma treatment monitoring method. The method of claim 278, The first correction light includes a plurality of discrete intensity peaks, and the second correction light includes a continuum of intensity. Plasma treatment monitoring method. The method of claim 278, The performing of the first correcting step and the performing of the second correcting step are executed at different non-overlapping times. Plasma treatment monitoring method. 278. The method of claim 277 wherein The first correction light includes a plurality of discrete intensity peaks, the second correction light includes a continuum of intensity, The directing of the first and second correction lights is performed at different non-overlapping points of time. Plasma treatment monitoring method. 272. The method of claim 273 wherein Performing the at least one adjustment comprises applying a first correction factor to data indicative of the optical emission in the first wavelength region and a second correction in the data indicative of the optical emission in the second wavelength region. Applying a coefficient Plasma treatment monitoring method. 272. The method of claim 273 wherein Performing the at least one adjustment includes normalizing data indicative of the optical emission in the first wavelength region and normalizing data indicative of the optical emission in the second wavelength region. Plasma treatment monitoring method. 272. The method of claim 273 wherein Performing a second determination step comprising determining whether the window is filtering the optical emission of the plasma in a third wavelength region outside the respective first and second wavelengths within the first wavelength range Step, wherein the performing of the second determining step uses the monitoring step; And Causing the plasma monitoring assembly to ignore data indicative of the optical emission in the third wavelength range when the filtration is confirmed by performing the second judging step Plasma treatment monitoring method comprising a. 282. The method of claim 284, The monitoring step, Directing correction light comprising a second wavelength range towards the window; And Reflecting a first portion of the correction light from the window; Performing the second determination step, Identifying a plurality of intensity peaks in the correction light from the directing step; And Performing a third determining step comprising determining when the peak from the identifying step is at least substantially free of the first portion of the corrected light from the reflecting step, defining the third wavelength region; Containing Plasma treatment monitoring method. 282. The method of claim 284, The monitoring step, Directing correction light towards the window, wherein the correction light includes a second wavelength range and the correction light includes a continuum of intensity; Reflecting the first portion of the correction light towards the window; The performing step of the second determination step, Determining which region in the first portion of the correction light from the reflecting step has at least substantially zero intensity defining the first wavelength region; Plasma treatment monitoring method. In the plasma processing system, A processing chamber comprising a window, wherein the window comprises an inner surface exposed to plasma processing performed in the chamber and an outer surface isolated from the plasma processing; Means for generating plasma in the processing chamber to perform the plasma processing in the processing chamber; Means for obtaining an optical emission of the plasma in the chamber that is emitted through the window during the plasma processing; Means for evaluating the plasma processing through the output from the acquiring means; And A calibration assembly operatively interconnected with said evaluation means Including, The correction assembly comprises means for correcting the evaluation means for each of the first and second conditions, wherein the first condition is a wavelength shift associated with the optical emission used by the evaluation means, 2 condition is the intensity shift associated with the optical emission used by the evaluation means Plasma processing system. 290. The method of claim 287 wherein The acquiring means comprises at least one spectrometer Plasma processing system. 290. The method of claim 287 wherein The evaluation means comprises means for comparing a pattern of the optical emission from the current plasma treatment with a pattern of a previous optical emission in time from at least one plasma treatment. Plasma processing system. 290. The method of claim 287 wherein The correction means, Means for directing correction light into the window; And Means for comparing the portion of the correction light reflected by the window with the correction light from the means for directing Plasma processing system. 290. The method of claim 290 wherein The correction means, Means for limiting said portion of said correction light used by said comparing means to a portion of said correction light from said means for directing reflected by said inner surface of said window; Plasma processing system. 290. The method of claim 291 wherein The limiting means impinge on the outer surface of the window at an angle other than perpendicular to the outer surface to direct at least substantially all of the correction light reflected by the outer surface of the window to be unavailable by the comparing means. And directing the correction light to the window such that a portion of the correction light impinges on the inner surface of the window to direct at least a portion of the correction light reflected by the inner surface of the window to be made available by the comparing means. Comprising means for directing Plasma processing system. 290. The method of claim 291 wherein The limiting means comprises an antireflective coating on at least a portion of the outer surface of the window. Plasma processing system. 290. The method of claim 290 wherein The comparing means comprises means for comparing the pattern of the correction light from the means for directing with the pattern of the portion of the correction light reflected by the window Plasma processing system. 290. The method of claim 287 wherein The optical emission associated with the acquisition means is within a first wavelength range, and the correction assembly provides means for determining whether the window is filtering the optical emission within a first wavelength range comprised within the first wavelength range. More containing Plasma processing system. 290. The method of claim 287 wherein The optical emission associated with the acquisition means is within a first wavelength range, and the correction assembly is within the first wavelength range and the first buffering effect for the first wavelength region where the window is within the first wavelength range. Means for determining whether there is a second buffering effect for a second wavelength region outside of the first wavelength region, wherein the first and second buffering effects are different. Plasma processing system. 290. The method of claim 287 wherein The correction means includes a first correction light source and a second correction light source, and the first correction light source is formed of light of a different type from the second correction light source. Plasma processing system. The method of claim 297, wherein The first correction light source includes a plurality of discrete intensity peaks, and the second correction light source includes a continuum of intensities. Plasma processing system. 303. The method of claim 298 wherein The first correction light source is used by the correction means to confirm the first condition, and the second correction light source is used by the correction means to confirm the second condition. Plasma processing system. 290. The method of claim 287 wherein The acquiring means comprises a first optical fiber cable assembly, the correction means comprises a second optical fiber cable assembly, the system further comprises an optical fiber cable fixture assembly, The fixture assembly includes a recess region that interfaces with at least a portion of the outer surface of the window and a first port extending through the fixture assembly to intersect the recess region, the fixture assembly defining the recess region. At least a portion of the substrate includes a light absorbing material, wherein the first ends of the first and second optical fiber cable assemblies are attached to the fastener assembly in axial alignment with the first port, the fastener assembly closing the window. With respect to the window such that a reference axis protruding from the first end of the first and second optical fiber cable assemblies intersects the outer surface of the window at an angle other than right angle and intersects the inner surface of the window at least substantially perpendicularly. Placed Plasma processing system. 309. The method of claim 300, The first ends of the first and second fiber optic cable assemblies are coaxially disposed and threadedly interconnected with the fixture assembly. Plasma processing system. In the plasma processing system, A processing chamber comprising a window, wherein the window comprises an inner surface exposed to plasma processing performed in the chamber and an outer surface isolated from the plasma processing; Means for generating plasma in the processing chamber to perform the plasma processing in the processing chamber; Means for obtaining an optical emission of the plasma in the chamber that is emitted through the window during the plasma processing, wherein the optical emission is within a first wavelength range; Means for evaluating the plasma processing through the output from the acquiring means; And A calibration assembly operatively interconnected with said evaluation means Including, The correction assembly, Means for determining if the window is filtering the optical emission in a first wavelength range comprised within the first wavelength range Plasma processing system. 302. The method of claim 302 The acquiring means comprises at least one spectrometer Plasma processing system. 302. The method of claim 302 The evaluation means comprises means for comparing a pattern of the optical emission from the current plasma treatment with a pattern of a previous optical emission in time from at least one plasma treatment. Plasma processing system. 302. The method of claim 302 The determination means, Means for directing correction light into the window; And Means for comparing the portion of the correction light reflected by the window with the correction light from the means for directing Plasma processing system. 305. The method of claim 305, The determination means, Means for limiting said portion of said correction light used by said comparing means to a portion of said correction light from said means for directing reflected by said inner surface of said window; Plasma processing system. 307. The method of claim 306, The limiting means impinge on the outer surface of the window at an angle other than perpendicular to the outer surface to direct at least substantially all of the correction light reflected by the outer surface of the window to be unavailable by the comparing means. And directing the correction light to the window such that a portion of the correction light impinges on the inner surface of the window to direct at least a portion of the correction light reflected by the inner surface of the window to be made available by the comparing means. Comprising means for directing Plasma processing system. 307. The method of claim 306, The limiting means comprises an antireflective coating on at least a portion of the outer surface of the window. Plasma processing system. 305. The method of claim 305, The determining means comprises means for comparing the pattern of correction light from the means for directing with the pattern of the portion of the correction light reflected by the window. Plasma processing system. 305. The method of claim 305, The correction assembly further comprises means for confirming a wavelength shift associated with the evaluation means. Plasma processing system. 309. The method of claim 310, The means for directing comprises means for directing a first correction light to the window, the means for identifying includes means for directing a second correction light to the window, and the first correction light is the second correction light. 2 consisting of correction light and other types of light Plasma processing system. 307. The method of claim 311, wherein The second correction light includes a plurality of discrete intensity peaks, and the first correction light includes a continuum of intensity. Plasma processing system. 302. The method of claim 302 The obtaining means comprises a first optical fiber cable assembly, the correction assembly comprises a second optical fiber cable assembly, the system further comprises an optical fiber cable fixture assembly, The fixture assembly includes a recess region that interfaces with at least a portion of the outer surface of the window and a first port extending through the fixture assembly to intersect the recess region, the fixture assembly defining the recess region. At least a portion of the substrate includes a light absorbing material, wherein the first ends of the first and second optical fiber cable assemblies are attached to the fastener assembly in axial alignment with the first port, the fastener assembly closing the window. With respect to the window such that a reference axis protruding from the first end of the first and second optical fiber cable assemblies intersects the outer surface of the window at an angle other than right angle and intersects the inner surface of the window at least substantially perpendicularly. Placed Plasma processing system. The method of claim 313, wherein The first ends of the first and second fiber optic cable assemblies are coaxially disposed and threadedly interconnected with the fixture assembly. Plasma processing system. 302. The method of claim 302 The calibration assembly includes a first buffering effect for the second wavelength region where the window is within the first wavelength range and outside of the first wavelength range and within the first wavelength range and the respective first and second wavelength ranges. Means for determining whether there is a second buffering effect on an external third wavelength region, wherein the first and second buffering effects are different. Plasma processing system. 302. The method of claim 302 The correction assembly comprises means for correcting the evaluation means for each of the first and second conditions, wherein the first condition is a wavelength shift associated with the optical emission used by the evaluation means, and the second The condition is an intensity shift associated with the optical emission used by the evaluation means. Plasma processing system. In the plasma processing system, A processing chamber comprising a window, wherein the window comprises an inner surface exposed to plasma processing performed in the chamber and an outer surface isolated from the plasma processing; Means for generating plasma in the processing chamber to perform the plasma processing in the processing chamber; Means for obtaining an optical emission of the plasma in the chamber that is emitted through the window during the plasma processing, wherein the optical emission is within a first wavelength range; Means for evaluating the plasma processing through the output from the acquiring means; And A calibration assembly operatively interconnected with said evaluation means Including, The correction assembly, A first buffering effect for a first wavelength range where the window is within the first wavelength range and a second buffering effect for a second wavelength range that is within the first wavelength range and outside the first wavelength range, wherein the above Means for determining whether the first and second buffering effects are different. Plasma processing system. 317. The method of claim 317 The acquiring means comprises at least one spectrometer Plasma processing system. 317. The method of claim 317 The evaluation means comprises means for comparing a pattern of the optical emission from the current plasma treatment with a pattern of a previous optical emission in time from at least one plasma treatment. Plasma processing system. 317. The method of claim 317 The determination means, Means for directing correction light into the window; And Means for comparing the portion of the correction light reflected by the window with the correction light from the means for directing Plasma processing system. 333. The method of claim 320, The determination means, Means for limiting said portion of said correction light used by said comparing means to a portion of said correction light from said means for directing reflected by said inner surface of said window; Plasma processing system. 333. The method of claim 320, The limiting means impinge on the outer surface of the window at an angle other than perpendicular to the outer surface to direct at least substantially all of the correction light reflected by the outer surface of the window to be unavailable by the comparing means. And directing the correction light to the window such that a portion of the correction light impinges on the inner surface of the window to direct at least a portion of the correction light reflected by the inner surface of the window to be made available by the comparing means. Comprising means for directing Plasma processing system. 333. The method of claim 320, The limiting means comprises an antireflective coating on at least a portion of the outer surface of the window. Plasma processing system. 333. The method of claim 320, The determining means comprises means for comparing the pattern of correction light from the means for directing with the pattern of the portion of the correction light reflected by the window. Plasma processing system. 333. The method of claim 320, The correction assembly further comprises means for confirming a wavelength shift associated with the evaluation means. Plasma processing system. 325. The method of claim 325 wherein The means for directing comprises means for directing a first correction light to the window, the means for identifying includes means for directing a second correction light to the window, and the first correction light is the second correction light. 2 consisting of correction light and other types of light Plasma processing system. 327. The method of claim 326, The second correction light includes a plurality of discrete intensity peaks, and the first correction light includes a continuum of intensity. Plasma processing system. 333. The method of claim 320, The acquiring means comprises a first optical fiber cable assembly, the means for the compensating assembly comprises a second optical fiber cable assembly, the system further comprises an optical fiber cable fixture assembly, The fixture assembly includes a recess region that interfaces with at least a portion of the outer surface of the window and a first port extending through the fixture assembly to intersect the recess region, the fixture assembly defining the recess region. At least a portion of the substrate includes a light absorbing material, wherein the first ends of the first and second optical fiber cable assemblies are attached to the fastener assembly in axial alignment with the first port, the fastener assembly closing the window. With respect to the window such that a reference axis protruding from the first end of the first and second optical fiber cable assemblies intersects the outer surface of the window at an angle other than right angle and intersects the inner surface of the window at least substantially perpendicularly. Placed Plasma processing system. 328. The method of claim 328 wherein The first ends of the first and second fiber optic cable assemblies are coaxially disposed and threadedly interconnected with the fixture assembly. Plasma processing system. 317. The method of claim 317 The correction assembly further comprises means for determining if the window is within the first wavelength range and filtering the optical emission in a third wavelength region outside of each of the first and second wavelength regions. Plasma processing system. 317. The method of claim 317 The correction assembly comprises means for correcting the evaluation means for each of the first and second conditions, wherein the first condition is a wavelength shift associated with the optical emission used by the evaluation means, and the second The condition is an intensity shift associated with the optical emission used by the evaluation means. Plasma processing system. A method of monitoring plasma processing performed in a processing chamber, Obtaining an optical emission in the processing chamber; Evaluating the output of the optical emission obtaining step via a first computer; Generating plasma in the processing chamber; And Confirming the beginning of the generation step through the evaluation step Plasma treatment monitoring method comprising a. Plasma monitoring system, Processing chamber; Means for obtaining an optical emission in the processing chamber; Means for evaluating an output of said acquiring means, wherein said evaluating means comprises a first computer; Means for generating plasma in the processing chamber; And Means for confirming activation of said means for generating, said means for identifying comprising said evaluation means; Plasma monitoring system comprising a. A plasma monitoring system for plasma processing performed on a first product in said processing chamber, The system comprises a computer-readable storage medium, The computer-readable storage medium includes: Means for receiving data indicative of an optical emission in the processing chamber; Means for evaluating the data provided to the receiving means; And Means for ascertaining when plasma is first present in the processing chamber, the means for identifying comprising the evaluation means Plasma monitoring system comprising a. In the system for performing plasma processing, Processing chamber; A plasma generator in the processing chamber, wherein the plasma processing may be performed on a product in the processing chamber when the plasma generator is activated; And A plasma monitoring assembly comprising a computer-readable storage medium and operatively interfaced with the processing chamber, wherein the computer-readable storage medium includes a first data structure comprising a plurality of data entries, each of A data entry is associated with one of the first, second and third categories, respectively, wherein the first category assumes a first form of plasma processing that is assumed to be executed in the processing chamber and at least substantially progressed without errors. And the second category is executed in the processing chamber in which at least one error occurred during the plasma processing and in which the at least one error is identified in the first data structure of the computer-readable storage medium. Reserved for a second form of processing, wherein the third category is A third form of the plasma process executed in the processing chamber that does not correspond to the data entry associated with the first category and is not yet associated with a possible cause in the first data structure of the computer-readable storage medium. Reserved for- System comprising. 335. The method of claim 335 The first entry of the data entry includes first data representing the entirety of the first form of the plasma process of the plasma process, and the second entry of the data entry is at least one in which a first error occurred during the plasma process; Second data representing a second form of the plasma process at a point in time, wherein first second data indicates the first error and is identified in a second entry of the data entry. system. 335. The method of claim 335 Each data entry associated with the first category includes data indicative of an optical emission of the plasma in the processing chamber at at least a plurality of time points during the plasma processing of the second type. system. The method of claim 337, wherein The optical emission includes a wavelength of at least about 250 nanometers to about 1000 nanometers at least every 1 nanometer. system. 335. The method of claim 335 A first portion of the plurality of data entries is associated with the first category, and at least one data entry of the first portion is from a first plasma recipe previously executed for a product in the processing chamber, the first portion At least one data entry of the portion is from a second plasma recipe previously executed for the product in the processing chamber, wherein the first plasma recipe is different from the second plasma recipe. system. 335. The method of claim 335 A first portion of the plurality of data entries is associated with the first category, and at least two data entries of the first portion come from two first plasma recipes previously executed for a product in the processing chamber. system. 335. The method of claim 335 Available by the plasma monitoring assembly as a standard for future access to the plasma processing executed in the processing chamber associated with the first category. system. 335. The method of claim 335 Each data entry associated with the second category comprises data indicative of the at least one error during the second type of plasma processing and indicative of an optical emission of the plasma in the processing chamber. system. 335. The method of claim 335 A first portion of the plurality of data entries is associated with the second category, and at least one data entry of the first portion is from a first plasma recipe previously executed for a product in the processing chamber, the first portion At least one data entry of the portion is from a second plasma recipe previously executed for the product in the processing chamber, wherein the first plasma recipe is different from the second plasma recipe. system. 335. The method of claim 335 A first portion of the plurality of data entries is associated with the second category, and at least two data entries of the first portion are from two first plasma recipes previously executed in the processing chamber, each first And data indicative of a second error, wherein the first and second errors are different. system. 335. The method of claim 335 Each data entry associated with the third category comprises data indicative of an optical emission of the plasma in the processing chamber at at least one point during the third type of plasma processing. system. 345. The method of claim 345, The optical emission includes a wavelength of at least about 250 nanometers to about 1000 nanometers at least every 1 nanometer. system. 335. The method of claim 335 The one data entry is the third type of plasma processing previously executed in the processing chamber at at least one time point during which the first error occurs during the third type of plasma processing and the first error has not yet been identified. Containing data related to system. 335. The method of claim 335 The third type of plasma previously executed in the processing chamber that has proceeded substantially without error but which is not included in the first data structure of the computer-readable medium in relation to the first category. Containing data related to processing system. 335. The method of claim 335 Means for delivering at least a portion of the data entry associated with the third plasma processing category to one of the first and second plasma processing categories The system further comprising. 335. The method of claim 335 The plasma monitoring assembly further comprises means for comparing the current plasma processing against the first data structure of the computer-readable storage medium. system. 335. The method of claim 335 The first data structure is available for the plasma processing selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation and a verification wafer operation performed on at least one product in the processing chamber. system. A plasma monitoring system for plasma processing performed in a processing chamber, The system comprises a computer-readable storage medium, The computer-readable storage medium includes: A first data structure comprising a plurality of data entries, wherein each of the data entries is associated with one of the first, second and third categories, respectively, wherein the first category is executed in the processing chamber and Reserved for a first form of plasma processing, assuming at least substantially free of error, wherein the second category is executed in the processing chamber where at least one error occurred during the plasma processing and the computer-readable storage medium Wherein the at least one error in the first data structure of is reserved for a second form of plasma processing identified, wherein the third category does not correspond to the data entry associated with the first category and is computer-readable Not yet associated with a possible cause in the first data structure of the storage medium Reserved for a third form of plasma processing performed in the processing chamber that fails; And Means for comparing the current plasma processing against at least one of the data entries in the first data structure Plasma monitoring system comprising a. 352. The method of claim 352 wherein The comparing means comprises means for comparing the current plasma processing for each of the data entries associated with the first category before comparing the current plasma processing for the data entries associated with the second category. Plasma monitoring system. A system for performing plasma processing, wherein the system comprises a plasma monitoring assembly operatively interfaced with a processing chamber and a computer-readable storage medium, the computer-readable storage medium being a plurality of. A first data structure comprising a data entry, wherein performing plasma processing comprises generating plasma in the processing chamber, acquiring optical emission of the plasma in the processing chamber, and generating the plasma. Terminating; comprising: terminating; Executing a first performing step; Executing a first recording step comprising recording a first entry of the data entry in the first data structure of the computer-readable storage medium, wherein the first data entry is the first data entry. A first output from the acquiring step in the executing step of the performing step; Executing a first associating step comprising associating the first output with a first category in the first data entry, wherein the first category is assumed to be executed in the processing chamber and at least substantially free of errors. Prepared for a first form of said performing step; Executing a second performing step; Executing a second recording step comprising writing a second entry of the data entry to the first data structure of the computer-readable storage medium, wherein the second data entry is the same as the second performing step. A second output from said acquiring step in the executing step; Executing a second associating step comprising associating at least a portion of the second output with a second category in the second data entry, wherein the second category is the at least one error that occurred during the plasma processing; Is reserved for a second form of said performing step that is executed in a processing chamber and wherein said at least one error is identified in said first data structure of said computer-readable storage medium; Executing a third performing step; Executing a third recording step comprising recording a third entry of the data entry in the first data structure of the computer-readable storage medium, wherein the third data entry is the same as the third performing step. A third output from said acquiring step in the executing step; And Executing a third associating step comprising associating at least a portion of the third output with a third category in the third data entry, wherein the third category corresponds to the data entry associated with the first category Reserved for a third form of said performing step executed in said processing chamber that has not yet been associated with a possible cause in said first data structure of said computer-readable storage medium; System initialization method comprising a. 354. The composition of claim 354, wherein The plasma processing step includes performing a plasma process selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation, and a verification wafer operation performed on at least one product in the processing chamber. How to initialize the system. 354. The composition of claim 354, wherein The acquiring step includes acquiring a wavelength of at least about 250 nanometers to about 1000 nanometers at least every one nanometer. How to initialize the system. 354. The composition of claim 354, wherein The executing of the first recording step includes writing the first output to the first data entry from at least a plurality of time points during the executing step of the first performing step. How to initialize the system. 354. The composition of claim 354, wherein Confirming that the execution step of the first execution step proceeded substantially without error after completion of the execution step of the first execution step. System initialization method further comprising. 354. The composition of claim 354, wherein Executing a fourth associating step comprising associating at least a portion of the second output with the third category prior to executing the second associating step; Analyzing the second output associated with the third category after completion of the execution of the second step; And Delivering at least a portion of said second output associated with said third category to said second category, wherein said delivering step is performed after completion of said analyzing step, and after said delivering step any of said second outputs Part is also not associated with the third category- How to initialize the system. 370. The method of claim 359 wherein The analyzing step includes identifying a first error that occurred during the executing step of the second performing step, wherein at least a portion of the second output from the delivering step indicates the first error. How to initialize the system. 370. The method of claim 359 wherein Said at least a portion of said second output from said delivering step comes from less than all of the execution steps of said second performing step How to initialize the system. 370. The method of claim 359 wherein Said at least a portion of said second output from said delivering step comes from a single point in time of an execution step of said second performing step How to initialize the system. 354. The composition of claim 354, wherein Executing a fourth associating step comprising associating the first output from the executing step of the first recording step with the third category prior to executing the first associating step; Analyzing the first output associated with the third category after completion of execution of the first performing step; And Delivering at least a portion of said first output associated with said third category to said first category, wherein said delivering step is performed after completion of said analyzing step, and after said delivering step any of said first outputs Part is also not associated with the third category- System initialization method further comprising. 372. A method according to claim 363, The at least a portion of the first output associated with the delivering step is the first output from the obtaining step from the executing step of the first performing step at multiple points during the execution of the first performing step. How to initialize the system. A plasma monitoring assembly comprising a computer-readable storage medium, wherein the computer-readable storage medium comprises a first data structure comprising a plurality of data entries, at least one of the data entries associated with a first category Wherein at least one of the data entries is associated with a second category and each of the data entries associated with the first category is a plurality of first data from a plurality of different time points while performing the plasma processing in the processing chamber. Each of said data entries associated with said first category defining a standard, and said each said data entry associated with said second category being defined during the execution of said plasma processing in said processing chamber at the time of the error. At least one from at least one point in time The second data segment, wherein the at least one second data segment indicates the error and is identified within the data entry storing the at least one second data segment. In the method, Executing a first plasma process in the processing chamber; Performing a first determining step comprising determining if the first plasma processing corresponds to the first data entry associated with the first category in the first data structure of the computer-readable storage medium; And Performing a second determining step comprising determining if the first plasma processing corresponds to the data entry associated with the second category in the first data structure of the computer-readable storage medium, wherein the second The performing of the second judging step is executed only at the occurrence of the first condition, the first condition corresponding to the data entry associated with the first category during the execution of the performing step of the first judging step. If you can't- Plasma treatment monitoring method. The method of claim 365, The first data structure is available for the plasma processing selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation, and a verification wafer operation performed on at least one product in the processing chamber. Plasma treatment monitoring method. The method of claim 365, The first data structure includes a plurality of data entries associated with the first category, the first data entry associated with the first category is from a first plasma recipe, and the second data entry associated with the first category is derived from the first data structure. Coming from two plasma recipes, the first plasma recipe and the second plasma recipe Plasma treatment monitoring method. The method of claim 365, The first data structure includes a plurality of data entries associated with the first category, the first data entry associated with the first category coming from a first plasma recipe, and the second data entry associated with the first category is also Coming from the same first plasma recipe Plasma treatment monitoring method. The method of claim 365, Acquiring current data from the first plasma processing execution step, wherein performing the first determination step comprises: among the first data segments from at least one of the data entries in which the current data is associated with the first category. Determining whether it is within at least one predetermined tolerance; Plasma treatment monitoring method further comprising. The method of claim 365, Acquiring current data from the first plasma processing execution step, wherein performing the first determination step comprises: the first data from at least one of the data entries in which the pattern of the current data is associated with the first category; Determining at least substantially matching a pattern of at least one of the segments- Plasma treatment monitoring method further comprising. The method of claim 365, Acquiring current data from the first plasma processing execution step, wherein performing the first determination step comprises: from at least one of the data entries in which the current data at the first point in time is associated with the first category, And determining whether it is within a predetermined tolerance of at least one of the first data segments associated with the first time point. Plasma treatment monitoring method further comprising. The method of claim 365, Acquiring a current optical emission of a plasma in the processing chamber from the first plasma processing execution step, wherein each of the first data segments of each of the data entries associated with the first category is selected from the Performing, in relation to each said data entry associated with said first category, stored optical emission of plasma in said processing chamber from a plurality of different time points during one plasma processing execution step; Is, Performing a third determination step comprising determining whether the current optical emission at a current time point satisfies a second condition, wherein the second condition is that the current optical emission at the current time point is Is within a predetermined tolerance of the stored optical emission of at least one of the first data segments from the data entry; Designating the earliest-in-time of the at least one of the first data segments as the current first data segment when the performing of the first determining step confirms the second condition. ; Terminating the execution of the first determination step in relation to the data entry when the performing of the third determination step fails to confirm the second condition; And If the performing of the third judging step confirms the second condition, repeating the loop until execution of the exiting step associated with the loop; The loop is Increasing the current point in time by a first increment; Performing a fourth determination step comprising determining whether the current optical emission at the current time point satisfies a third condition, wherein the third condition is the current optical emission at the current time point Is within a predetermined tolerance of the stored optical emission next to the first data segment following the current first data segment; Performing a fifth determination step only when the performing of the fourth determination step fails to confirm the third condition, wherein the performing of the fifth determination step comprises the current optical emission at the present time Determining whether the fourth condition is satisfied, wherein the fourth condition is that the optical emission at the current time point is within a predetermined tolerance of the stored optical emission of the current first data segment. -; Exiting the loop when at least one of the fifth and sixth conditions exists, wherein the fifth condition is when the performing of the fifth determining step is executed and the fourth condition is not confirmed; The sixth condition is the case where all the current optical emission from the first plasma processing execution step is evaluated by the performing step of the first determining step; And Setting the next one of the first data segment equal to the current first data segment only if the performing of the fourth determination step confirms the third condition. Plasma treatment monitoring method. The method of claim 365, Acquiring current data from the first plasma processing execution step, wherein the performing of the second determination step includes determining whether a second condition exists; and wherein the second condition includes the first data; Is within a predetermined tolerance of at least one of the second data segments from at least one of the data entries associated with two categories- Plasma treatment monitoring method further comprising. 375. The method of claim 373 wherein Initiating a first action if the second condition exists, wherein the first action terminates the step of executing the first plasma process, an alert associated with the presence of the second condition. ), Stopping further execution of the plasma treatment for the product in the chamber, affecting the plasma in the processing chamber from the first plasma processing execution step based on the presence of the second condition. Initiating adjustment of at least one process control parameter and a combination of these steps- Plasma treatment monitoring method further comprising. The method of claim 365, Acquiring current data from the first plasma processing execution step, wherein the performing of the second determination step includes the second data from at least one of the data entries in which the pattern of the current data is associated with the second category. Determining at least substantially matching a pattern of at least one of the segments- Plasma treatment monitoring method further comprising. The method of claim 365, Acquiring current data from the first plasma processing execution step, wherein performing the second determination step comprises: from at least one of the data entries in which the current data at the first point in time is associated with the second category, And determining whether it is within a predetermined tolerance of at least one of the second data segments associated with the first time point. Plasma treatment monitoring method further comprising. The method of claim 365, The first data structure further includes a third category, wherein each of the data entries associated with the third category does not correspond to the data entry associated with the first category and also does not correspond to the second category. At least one third data segment from the step of executing the plasma processing in the processing chamber, wherein the method does not correspond to the at least one data entry associated with the first category; Writing data from the step of executing the first plasma process if it does not correspond to at least one of the data entries associated with the second category, wherein the writing step is performed on the first data structure. Define the data entry, Method further comprises the step of associating with the third category of the data in the data entry from the recording step Plasma treatment monitoring method. 375. The method of claim 377 wherein Analyzing the data associated with the recording step after completion of the first plasma processing execution step; And Transferring at least a portion of the data associated with the recording step from the third category to the second category, wherein the transferring step is performed after completion of the analyzing step Plasma treatment monitoring method. 378. The method of claim 378, wherein The analyzing step includes identifying a first error that occurred during the first plasma processing execution step, wherein the at least a portion of the data associated with the transferring step represents the first error. Plasma treatment monitoring method. 378. The method of claim 378, wherein Said at least a portion of said data from said delivering step comes from less than all of said first plasma processing execution step Plasma treatment monitoring method. 378. The method of claim 378, wherein Said at least a portion of said data from said delivering step comes from a single point in time of said first plasma processing execution step Plasma treatment monitoring method. 375. The method of claim 377 wherein Analyzing the data associated with the recording step after completion of the first plasma processing execution step; And Transferring at least a portion of the data from the recording step from the third category to the first category, wherein the transferring step is performed after completion of the analyzing step Plasma treatment monitoring method. 390. The method of claim 382, Said at least a portion of said data relating to said delivery step comes from a plurality of time points during said first plasma processing execution step and represents the entirety of said first plasma processing execution step after said plasma in said processing chamber has stabilized. Plasma treatment monitoring method. The method of claim 365, Take a first action when the first condition exists and it is determined that the first plasma process corresponds to the at least one data entry associated with the second category by the performing step of the second determining step; Initiating, wherein the first action comprises terminating the first plasma processing execution step, generating an alarm associated with the presence of the first condition, and further performing the plasma processing on a product in the chamber. Stopping, initiating adjustment of at least one process control parameter affecting the plasma in the process chamber from the first plasma process execution step and a combination of these steps. Plasma treatment monitoring method further comprising. A plasma monitoring assembly comprising a computer-readable storage medium, wherein the computer-readable storage medium comprises a first data structure comprising a first data entry comprising a plurality of data entries, the first data entry Is associated with a first category and includes a plurality of first data segments from a plurality of different time points during the plasma processing execution step in the processing chamber, wherein the first data entry defines a standard and wherein each of the first One data segment includes data representative of the optical emission of the plasma in the processing chamber during the first plasma processing execution step, the optical emission defining at least about 250 nanometers defining a first wavelength range at least every 1 nanometer. Including wavelengths in meters to about 1000 nanometers. A method for monitoring the processing hemp, Executing a second plasma process in the processing chamber; Acquiring a current optical emission of the plasma in the processing chamber at least at a first time point during the execution of the second plasma treatment, wherein the current optical emission is in the first wavelength range and the first wavelength At least every 1 nanometer over the range; And Comparing the current optical emission with at least one segment of the first data segment from the first data entry over the first wavelength range at least every 1 nanometer over the first wavelength range. Plasma treatment monitoring method. 385. The method of claim 385, wherein The first data structure is available for the plasma processing selected from the group consisting of a plasma recipe, a plasma cleaning operation, a plasma conditioning operation, and a verification wafer operation performed on a product in the processing chamber. Plasma treatment monitoring method. 385. The method of claim 385, wherein The second plasma processing execution step includes performing a plasma recipe on a product in the processing chamber. Plasma treatment monitoring method. 385. The method of claim 385, wherein The acquiring step includes acquiring the current optical emission of the plasma at a plurality of time points during the second plasma processing execution step, wherein each of the plurality of time points is the first time point. Plasma treatment monitoring method. 385. The method of claim 385, wherein The acquiring step includes acquiring the current optical emission at uniformly spaced one hour intervals not exceeding about one second during the second plasma processing execution step, wherein each of the time intervals is the first time point. Containing Plasma treatment monitoring method. 385. The method of claim 385, wherein The comparing step includes determining whether the pattern of the optical emission at the first time point matches at least substantially the pattern of the optical emission associated with at least one first data segment of the first data entry. doing Plasma treatment monitoring method. 385. The method of claim 385, wherein The comparing step evaluates a plurality of data points in the current optical emission from the acquiring step with respect to corresponding points in the optical emission associated with the at least one first data segment of the first data entry. Where each point is a predetermined wavelength and the maximum spacing between adjacent wavelengths used by the comparing step is about 1 nanometer Plasma treatment monitoring method. 385. The method of claim 385, wherein The at least one first data segment from the comparing step is the first data segment from the first data entry also associated with the first time point. Plasma treatment monitoring method. 385. The method of claim 385, wherein Incrementing the first time point by a first time period and repeating the acquiring and comparing steps Plasma treatment monitoring method further comprising. 385. The method of claim 385, wherein Initiating a first action if the comparing step yields a first result, wherein the first result is associated with the at least one first data segment in which the current optical emission is above a predetermined tolerance. Deviating from the optical emission, wherein the first action comprises terminating the second plasma processing execution step, generating an alert associated with the first result encountered by the comparing step, for a product in the processing chamber Stopping the execution of further plasma processing, initiating adjustment of at least one process control parameter affecting plasma in the processing chamber during the second plasma processing execution step, and a combination of these steps - Plasma treatment monitoring method further comprising. A method for monitoring plasma processing using a plasma monitoring assembly comprising a computer-readable storage medium having a first data structure, the method comprising: Executing a first plasma process in the processing chamber; Acquiring first optical emission data of plasma in the processing chamber at at least a plurality of time points during the first plasma processing execution step; Writing a first data entry to the first data structure, wherein the first data entry defines a first standard and includes a plurality of first data segments from a plurality of different time points during the first plasma processing execution step; Wherein each first data segment comprises data representing the first optical emission from one of the plurality of viewpoints, the first optical emission defining a first wavelength range, at least every Comprising a wavelength of at least about 250 nanometers to about 1000 nanometers per nanometer; Executing a second plasma process in the processing chamber; Acquiring second optical emission data of the plasma in the processing chamber at at least a plurality of time points during the second plasma processing execution step, wherein the second optical emission is at least every 1 nanometer in the first wavelength range. Each wavelength including a wavelength within the first wavelength range; And Evaluating the execution of the second plasma process using the recording step and at least a portion of the second optical emission from each of the plurality of viewpoints associated with the second optical emission step. Plasma treatment monitoring method comprising a. 395. The method of claim 395, wherein Said evaluating step comprises using only a portion of said second optical emission from each of said plurality of viewpoints associated with said second optical emission obtaining step. Plasma treatment monitoring method. 395. The method of claim 395, wherein Identifying at least one wavelength indicative of an error occurring in said plasma process in said processing chamber prior to said second plasma processing execution step; And Selecting a subset of said first wavelength range for said evaluation step Plasma treatment monitoring method further comprising. 397. The method of claim 397, wherein The subset is at least 50 nanometers in bandwidth, and the evaluating step comprises executing the evaluating step in at least every one nanometer increment over the 50 nanometer bandwidth; Plasma treatment monitoring method. A method for performing plasma processing on an article in a processing chamber using a computer-readable storage medium, wherein the computer-readable storage medium includes a plurality of data entries, wherein the first data entry is a first data entry. 1 includes a plurality of data segments relating to a first plasma process performed on a product in the processing chamber advanced according to a standard, and the second data entry is a second executed on a product in the processing chamber advanced according to a second standard. And a plurality of data segments related to the plasma treatment, wherein the first plasma treatment has a different form than the second plasma treatment. Loading a quantity of product into said processing chamber; Performing a second plasma treatment on the product in the processing chamber; Obtaining data relating to the third plasma process; And Determining whether the third plasma processing is of the same form as one of the first and second plasma processing, wherein the determining step is performed using the acquiring step and executed during the third plasma processing execution step; Plasma processing execution method comprising a. 399. The method of claim 399, wherein An identity of the first plasma process and the second plasma process is provided to the computer-readable storage medium in association with the first and second data entries, respectively. How to perform plasma processing. 399. The method of claim 399, wherein The loading step includes loading at least one wafer into the processing chamber. How to perform plasma processing. 399. The method of claim 399, wherein The data acquiring step includes acquiring a current optical emission of the plasma in the processing chamber during a third plasma processing execution step, wherein the data segments of the first and second data entries are respectively the first and the first Stored plasma emission of plasma in the processing chamber during two plasma treatment How to perform plasma processing. 403. A method according to claim 402, The current optical emission and the stored optical emission each comprise a wavelength of at least about 250 nanometers to about 1000 nanometers at least every one nanometer, defining a first wavelength range. How to perform plasma processing. 403. A method according to claim 403, The determining step includes determining whether the current optical emission is within a predetermined tolerance of the stored optical emission of at least one of the data segments from at least one of the first and second data entries. How to perform plasma processing. 403. A method according to claim 403, The determining step may include determining whether the pattern of the current optical emission matches at least substantially the pattern of the stored optical emission of at least one of the data segments from at least one of the first and second data entries. Containing How to perform plasma processing. 403. A method according to claim 403, The determining step includes the step where the current optical emission at a first time point is determined from at least one of the first and second data entries and the predetermined optical emission of one of the data segments associated with the first time point. Determining whether it is within tolerance. How to perform plasma processing. 403. A method according to claim 403, With respect to each of said first and second data entries, said determining step comprises: Performing a first determining step comprising determining whether the current optical emission at a current time point satisfies a first condition, wherein the first condition is that the current optical emission at the current time point is Is within a predetermined tolerance of the stored optical emission of at least one of the first data segments from the data entry; Designating the earliest-in-time of the at least one of the first data segments as the current data segment when the performing of the first determining step confirms the first condition; Terminating the performance of the first determination step in relation to the data entry if the execution of the first determination step fails to confirm the first condition; And If the performing of the first judging step confirms the first condition, repeating the loop until execution of the exiting step associated with the loop; The loop is Increasing the current point in time by a first increment; Performing a second determination step comprising determining whether the current optical emission at the current time point satisfies a second condition, wherein the second condition is the current optical emission at the current time point Is within a predetermined tolerance of the stored optical emission next to the data segment following the current data segment; Performing a third determination step only if the performing of the second determination step fails to confirm the second condition, wherein the performing of the third determination step is the current optical emission at the current time point Determining whether the third condition is satisfied, wherein the third condition is that the current optical emission at the current time point is within a predetermined tolerance of the stored optical emission of the current data segment. -; Exiting the loop when at least one of the fourth and fifth conditions exists, wherein the fourth condition is when the performing of the third determining step is executed and the third condition is not confirmed; The fifth condition is the case where all the current optical emission from the third plasma processing execution step is evaluated by the determination step; And And setting the next one of the data segments equal to the current data segment only if the performing of the second determination step confirms the second condition. How to perform plasma processing. 399. The method of claim 399, wherein Displaying a result of the determining step Plasma processing execution method further comprising. 399. The method of claim 399, wherein Wherein said third plasma process comprises a plurality of plasma steps, said method comprising identifying each of said plurality of plasma steps using said determining step, said checking step being executed during said third plasma processing execution step And using the acquisition step How to perform plasma processing. A method of performing plasma processing on a product in a processing chamber, the method comprising: Loading a quantity of product into said processing chamber; Inputting the type of plasma processing to be performed on the product in the processing chamber, wherein the input step is to at least one controller associated with the processing chamber; Performing a first plasma treatment on the product in the processing chamber based on the input step; Acquiring data related to plasma in the processing chamber during the executing step; Identifying said form of said first plasma treatment from said obtaining step; And Displaying said form of said first plasma process from said confirmation step during said execution step Plasma processing execution method comprising a. 410. The method of claim 410, The loading step includes loading at least one wafer into the processing chamber. How to perform plasma processing. 410. The method of claim 410, The acquiring step includes acquiring a current optical emission of the plasma in the processing chamber during the performing step. How to perform plasma processing. 412. The method of claim 412 The current optical emission includes a wavelength of at least about 250 nanometers to about 1000 nanometers at least every 1 nanometer, defining a first wavelength range. How to perform plasma processing. 415. The method of claim 413 The verifying step utilizes a computer-readable storage medium system comprising at least one data entry, wherein the first data entry identifies a plurality of data segments associated with a second plasma process previously executed for a product in the processing chamber. Wherein each said data segment comprises stored optical emission of a plasma in said processing chamber during a second plasma processing, said acquiring step acquiring a current optical emission of said plasma in said processing chamber during said performing step Comprising the steps of How to perform plasma processing. 414. The method of claim 414, The verifying step includes determining whether the current optical emission is within a predetermined tolerance of the stored optical emission of at least one of the data segments from the first data entry. How to perform plasma processing. 414. The method of claim 414, The verifying step includes determining whether the pattern of the current optical emission matches at least substantially the pattern of the stored optical emission of at least one of the data segments from the data entry. How to perform plasma processing. 414. The method of claim 414, The identifying step includes determining whether the current optical emission at a first time point is within a predetermined tolerance of the stored optical emission of the data segment of the first data entry associated with the first time point. doing How to perform plasma processing. 414. The method of claim 414, The checking step, Performing a first determining step comprising determining whether the current optical emission at a current time point satisfies a first condition, wherein the first condition is that the current optical emission at the current time point is Is within a predetermined tolerance of the stored optical emission of at least one of the data segments from the first data entry; Designating the earliest-in-time of the at least one of the data segments as the current data segment when the performing of the first determining step confirms the first condition; Terminating the checking step with respect to the first data entry if the performing of the first judging step fails to check the first condition; And If the performing of the first judging step confirms the first condition, repeating the loop until execution of the exiting step associated with the loop; The loop is Increasing the current point in time by a first increment; Performing a second determination step comprising determining whether the current optical emission at the current time point satisfies a second condition, wherein the second condition is the current optical emission at the current time point Is within a predetermined tolerance of the stored optical emission next to the data segment following the current data segment; Performing a third determination step only if the performing of the second determination step fails to confirm the second condition, wherein the performing of the third determination step is the current optical emission at the current time point Determining whether the third condition is satisfied, wherein the third condition is that the current optical emission at the current time point is within a predetermined tolerance of the stored optical emission of the current data segment. -; Exiting the loop when at least one of the fourth and fifth conditions exists, wherein the fourth condition is when the performing of the third determining step is executed and the third condition is not confirmed; The fifth condition is the case where all the current optical emission from the third plasma processing execution step is evaluated by the determination step; And And setting the next one of the data segments equal to the current data segment only if the performing of the second determination step confirms the second condition. How to perform plasma processing. 410. The method of claim 410, The first plasma treatment includes a plurality of plasma steps, and the method includes identifying each of the plurality of plasma steps using the identification step. How to perform plasma processing. 410. The method of claim 410, The verifying step utilizes a computer-readable storage medium, the computer-readable storage medium comprising a first data structure having a plurality of data entries, the second data entry being the processing carried out in accordance with a second standard. A data relating to a second plasma treatment previously executed for a product in the chamber, wherein the third data entry is data related to a third plasma treatment previously executed for the product in the processing chamber advanced according to a third standard. Wherein the second plasma treatment is in a second form, the third plasma treatment is in a third form, and the second form and the third form are different from each other. How to perform plasma processing. 420. The method of claim 420 The input step includes inputting the second form of plasma processing, and the verifying step compares the data from the acquiring step with the data in the first data structure of the computer-readable storage medium. And the method further comprises restricting the comparing step at least initially to only the data in the second data entry. How to perform plasma processing. 420. The method of claim 420 Providing instructions to an operator regarding a first form of plasma processing to be performed on the product in the processing chamber; And Executing the input step after the command providing step, wherein the verifying step is the first from the step provided by the form from the input step to resolve a potential operator error associated with the input step. Provides information about whether the form is the same- How to perform plasma processing. A plasma monitoring system for plasma processing performed on a product in a processing chamber, The system comprises a computer-readable storage medium, the computer-readable storage medium, A first data structure comprising a first data entry, wherein data associated with a first plasma process performed on a product in the processing chamber may be input to the first data entry; Means for receiving data relating to a second plasma process performed on a product in the processing chamber during a second plasma process; And Means for determining a form of the second plasma process, wherein the determining means provides output before the end of the second plasma process and the receiving means, means for utilizing data stored in the first data structure. Including means for Plasma monitoring system comprising a. 423. The method of claim 423 The receiving means comprises means for receiving data indicative of an optical emission of the plasma in the processing chamber during the second plasma processing. Plasma monitoring system. The method of claim 424, wherein The current optical emission includes a wavelength of at least about 250 nanometers to about 1000 nanometers at least every 1 nanometer, defining a first wavelength range. Plasma monitoring system. 423. The method of claim 423 The first data entry includes a plurality of data segments associated with a first plasma process performed on a product in the processing chamber, each of the data segments being optical emission of plasma in the processing chamber during the first plasma processing. And means for receiving data indicative of a current optical emission of the plasma in the processing chamber during the second plasma processing. Plasma monitoring system. The method of claim 426, The determining means includes means for determining whether data indicative of the current optical emission is within a predetermined tolerance of the data indicative of at least one optical emission of the data segment from the first data entry. Plasma monitoring system. The method of claim 426, The determining means means for determining whether the pattern of data indicative of the current optical emission matches at least substantially the pattern of data indicative of the optical emission of at least one of the data segments from the first data entry. Containing Plasma monitoring system. The method of claim 426, The means for determining determines a predetermined tolerance of the data in which the data indicative of the current optical emission at a first time point is indicative of the optical emission of the data segment associated with and from the first data entry. Means for determining if they are within Plasma monitoring system. The method of claim 426, The determination means, First determining means comprising means for determining whether the data indicative of the current optical emission at a current time point satisfies a first condition, wherein the first condition is a current optical emission at the current time point The data indicative of is within a predetermined tolerance of the data indicative of an optical emission of at least one of the data segments from the first data entry; Means for designating the earliest-in-time of the at least one of the data segments as the current data segment when the first determining means confirms the first condition; Means for deactivating the first judging means when the first judging means fails to confirm the first condition; And Means for repeating the loop until the activation time of the means for exiting associated with the loop when the first determining means confirms the first condition, The loop is Means for increasing the current time point by a first increment; Second determining means including means for determining whether the data representing the current optical emission at the current time point satisfies a second condition, wherein the second condition is a current optical emission at the current time point. The data indicative is within a predetermined tolerance of the data indicative of the next-in-time optical emission of the data segment following the current data segment; Third judging means for determining whether the data representing the current optical emission at the current time point satisfies a third condition, wherein the third condition is the data representing the current optical emission at the current time point. Is within a predetermined tolerance of the data indicative of an optical emission from the current data segment, and wherein the third determining means is only activated if the second determining means fails to confirm the second condition; Means for exiting the loop if at least one of the fourth and fifth conditions is present, wherein the fourth condition is a case where the third determining means is activated and the third condition is not confirmed; Condition 5 is the case where all the current optical emission from the second plasma process is evaluated by the judging means; And Means for setting the next one of the data segments equal to the current data segment, wherein the setting means is activated only when the second determining means confirms the second condition. Plasma monitoring system. 423. The method of claim 423 The first plasma treatment comprises a plurality of plasma steps, and the system further comprises means for identifying each of the plurality of plasma steps using the determining means. Plasma monitoring system. A plasma processing system having a processing chamber, a product storage device comprising a plurality of products, and a computer-readable storage medium, wherein the computer-readable storage medium comprises a plasma recipe section, the plasma recipe section A data entry, wherein a first data entry of the data entry comprises data associated with a first plasma recipe, a second data entry comprising data associated with a second plasma recipe, and the first plasma recipe comprises Different from the two plasma recipes, performing the plasma treatment comprises: moving at least one product from the product storage device, loading the at least one product into the processing chamber, the at least one in the processing chamber Product to one of the first and second plasma recipe Exposing to plasma according to; And moving the at least one product away from the processing chamber after the exposing step. Executing a first performing step, wherein said exposing step in executing a first performing step is only related to said first plasma recipe; Monitoring at least one characteristic of the plasma during execution of the first performing step; The execution of the first step of execution is performed by making the first and second data entries of the plasma recipe section of the computer-readable storage medium both available for comparison with the output from the monitoring step. Identifying what is associated with the plasma recipe; Executing a plurality of performance steps after the execution of the first performance step, wherein the exposing step in each execution of the plurality of performance steps is made only in accordance with the first plasma recipe; And Ascertaining that each performing step in the execution of the plurality of performing steps is only related to the first plasma recipe, wherein the identifying step comprises: the plasma recipe section of the computer-readable storage medium; Limiting the comparison of the output of the monitoring step of at least initially to the first data entry of the plasma recipe section; How to include. 432. The method of claim 432 wherein The verifying step may be performed by comparing the output of the monitoring step with the plasma recipe section of the computer-readable storage medium when one of the performing steps does not correspond to the first data entry. Allowing to further include a second data entry of the plasma recipe section for one of the performing steps in Way. 432. The method of claim 432 wherein The verifying step always includes limiting the comparison of the output of the monitoring step with the plasma recipe section of the computer-readable storage medium only to the first data entry of the plasma recipe section. Way. 432. The method of claim 432 wherein The product storage device comprises a wafer cassette, wherein the plurality of products comprise a plurality of wafers, and the performing step for each wafer in the cassette is intended to be limited to the first plasma recipe, wherein each of Verification step to verify this fact Way. A method for monitoring a first plasma process performed on a first product in a processing chamber, the method comprising: Loading the first product into the processing chamber; Sealing the processing chamber; Performing a first plasma treatment on the first product after the sealing step; And Obtaining data relating to the plasma used by said performing step; Determining whether the processing chamber is in a first condition during the performing step, wherein the first condition is executed in the processing chamber to a point where the interior of the processing chamber affects the performance of the processing chamber to an undesired degree. Adversely affected by the previous plasma treatment, the judgment step using the data acquisition step How to include. A plasma monitoring system for plasma processing performed on a product in a processing chamber, The system includes a computer-readable data storage medium, and the computer-readable data storage medium includes: Means for storing data relating to a first plasma treatment previously performed on a product in the processing chamber; Means for comparing data relating to a second plasma process currently being performed on a product in the processing chamber with the data in the storage means; And First means for determining if the processing chamber is in a first condition, wherein the first condition is applied to the product in the processing chamber to a point where the interior of the processing chamber affects the performance of the processing chamber to an undesired degree. Which was adversely affected by the previous plasma treatment carried out, the first determining means comprising the comparing means. system. A system for performing plasma processing on a product, A processing chamber comprising a product access and a window, wherein the product can be transferred between the interior and exterior of the processing chamber via the product access; A first gas inlet and a first gas outlet fluidly interconnected with the processing chamber; A plasma generator in the processing chamber, wherein the current plasma processing can be performed on the product in the processing chamber when the plasma generator is activated; And Plasma monitoring assembly comprising a computer-readable medium Including, The computer-readable medium may include Means for storing data relating to a first plasma treatment performed on a product in said processing chamber prior to said current plasma processing; Means for comparing data relating to the current plasma treatment currently being performed on a product in the processing chamber with the data relating to a first plasma treatment in the storage means; And First means for determining when the processing chamber is in a first condition, wherein the first condition is a product in the processing chamber to the point where the interior of the processing chamber affects the performance of the processing chamber to an undesired degree. Which was adversely affected by the previous plasma treatment carried out for the said first determining means comprising said comparing means. system. In the method of controlling a wafer production system, Dispensing at least one wafer into each of the first and second processing chambers; Processing the at least one wafer in the respective processing chamber after execution of the dispensing step associated with each processing chamber, wherein the processing step is plasma for the at least one wafer in the respective processing chamber. Performing a process; Monitoring the plasma in each processing chamber utilized by said performing step; And moving the at least one wafer from each processing chamber; Repeating the dispensing step at a plurality of times for each of the first and second processing chambers after the moving step with respect to the first and second processing chambers; And Stopping at least one execution of the dispensing step with respect to one of the first and second processing chambers when the first monitoring step during the first performing step in the respective processing chamber confirms the first condition; Wherein the first condition is adversely affected by the previous execution of the processing step in each processing chamber to the point where the interior of the respective processing chamber affects the performance of each processing chamber to an undesired degree. A dirty chamber condition at the time of receipt, a known error condition in which the first performing step is carried out without conforming to at least one standard associated with the performing step in each processing chamber, the first monitoring step being Unknown conditions, when identifying conditions that were not previously encountered in a previous execution of the processing step in each processing chamber, and Selected from the group consisting of from a combination of conditions - How to include. In the method of controlling a wafer production system, Distributing at least one wafer to each of the first, second and third processing chambers; Processing said at least one wafer in said respective processing chamber after each execution of said dispensing step, wherein said processing step comprises performing plasma processing on said at least one wafer in said each processing chamber. ; Monitoring the plasma in each processing chamber utilized by said performing step; And moving the at least one wafer from each processing chamber; Repeating the dispensing step for each of the first, second and third processing chambers at a plurality of time points after the respective moving step associated with the first, second and third processing chambers; Using a first dispensing sequence for the dispensing step, wherein the first dispensing sequence is performed first with respect to the first processing chamber and second with respect to the second processing chamber; , Thirdly executed on the third processing chamber; Stopping the first dispensing sequence if the monitoring step from at least one of the processing steps in the first processing chamber confirms a first condition; And Using a second distribution sequence after the execution of the pause step, wherein the second distribution sequence is different from the first distribution sequence. How to include. In the method of controlling a wafer production system, Dispensing at least one wafer into each of the first and second processing chambers; Processing the at least one wafer in each processing chamber after each execution of the dispensing step associated with each processing chamber, wherein the processing step is directed to the at least one wafer in the respective processing chamber. Performing plasma processing on the substrate; Monitoring the time to complete the plasma processing in each processing chamber; And moving the at least one wafer from each processing chamber; Repeating the dispensing step for each of the first and second processing chambers at a plurality of time points after the moving step with respect to the first second processing chamber; Using a first sequence for the dispensing step based on the monitoring step for at least one of the processing steps of the first and second chambers How to include. In a wafer production system, First and second processing chambers each including a wafer access, wherein at least one wafer is introduced into the first and second processing chambers through the wafer access associated with the first and second processing chambers, and the chamber Can be moved from-; First and second means for evaluating plasma in the first and second processing chambers respectively during the plasma processing performed on the at least one wafer; And Means for dispensing a wafer into the first and second processing chambers, wherein the dispensing means is operatively interfaced with the respective first and second evaluating means and output from the first and second evaluating means Affects the dispensing sequence used by said dispensing means. Wafer production system comprising a. In a wafer production system, First and second processing chambers, each containing a wafer access, wherein at least one wafer is introduced into and moved from the chamber through the respective wafer access; First and second means for monitoring time to complete a plasma process performed on wafers in said first and second processing chambers; And A wafer handling system operatively interfaced with the first and second processing chambers, respectively, wherein the wafer handling system is based on the respective first and second monitoring means for wafers into the first and second processing chambers; Means for controlling a dispensing sequence for the control means, said control means being operatively interfaced with said respective first and second monitoring means. Wafer production system comprising a. A method of preparing said processing chamber for carrying out a plasma recipe for a product when loaded into said processing chamber, Removing material from the interior of the processing chamber using plasma when the product is absent in the processing chamber; Acquiring an optical emission of the plasma in the processing chamber at at least a plurality of time points during the removal step; Comparing a current pattern of at least a portion of the optical emission from the acquiring step with a first standard pattern, wherein the comparing step is performed at at least a plurality of time points; And Terminating the removing step, wherein the terminating step is executed for a first condition, wherein the first condition is when the current pattern is within a predetermined tolerance of the first standard pattern; How to include. A method of preparing said processing chamber for carrying out a plasma recipe for a product when loaded into said processing chamber, Removing material from the interior of the processing chamber using plasma when the product is absent in the processing chamber; Acquiring an optical emission of the plasma in the processing chamber at at least a plurality of time points during the removal step; Determining an amount of difference between the optical emission before execution of the acquiring step and the optical emission from the execution step of the acquiring step, wherein the determining step is performed at multiple points in time during the removal step -; And Terminating the removing step, wherein the terminating step is executable for a first condition, wherein the first condition is when the amount of difference from the determining step does not shed the first amount; How to include. In the method of performing a plasma recipe for a product, A processing chamber comprising product access, wherein at least one product may be introduced into the processing chamber via the product access; Means for removing material from the interior of the processing chamber when no product is loaded in the processing chamber, wherein the removing means comprises plasma present in the processing chamber when the product is absent in the processing chamber; Means for obtaining an optical emission of the plasma used by the removal means at least at a plurality of time points during operation of the removal means; Means for comparing a first standard pattern with a current pattern of at least a portion of the optical emission from each of the plurality of executing steps of the acquiring means; And Means for deactivating the removal means, wherein the deactivation means is responsive to at least a first condition, wherein the first condition is such that the current pattern from at least one of the plurality of execution steps of the acquisition means is the first standard; When within the predetermined tolerance of pattern- System comprising. In the method of performing a plasma recipe for a product, A processing chamber comprising product access, wherein product may be transferred between the interior and exterior of the processing chamber via the product access; Means for removing material from the interior of the processing chamber when no product is loaded in the processing chamber, wherein the removing means includes plasma in the processing chamber when the product is absent in the processing chamber; Means for obtaining optical emission of the plasma in the processing chamber at at least a plurality of time points during operation of the removal means; Means for determining the amount of difference between the current optical emission and a previous optical emission in each of the plurality of execution steps of the acquisition means; And Means for deactivating said removal means, wherein said deactivation means is activated by a first condition, said first condition when the amount of said difference from said determining means does not exceed a first amount. System comprising. A method of preparing a processing chamber to perform a plasma recipe on a product in the processing chamber, Performing a conditioning wafer operation, wherein the executing step comprises loading a conditioning wafer into the chamber; Performing a plasma process on the conditioning wafer after the conditioning wafer loading step; Performing a first monitoring step comprising monitoring the optical emission of plasma in the chamber during the execution of the plasma processing; And unloading the conditioning wafer from the chamber after the plasma processing execution step; Repeating the execution of the conditioning wafer operation several times; Terminating the repetition step based on the execution of the first monitoring step; And Executing a production wafer operation after the termination step Including, Here, the execution step of the production wafer operation, Loading a production wafer into the chamber; Performing a plasma recipe on the production wafer after the production wafer loading step, wherein the plasma recipe comprises at least one plasma step of producing a predetermined result for the production wafer; Performing a second monitoring step comprising monitoring optical emission of the plasma in the processing chamber during the plasma recipe performing step; And Unloading the production wafer from the processing chamber after performing the plasma recipe, wherein at least one semiconductor device is formed from the production wafer after executing the production wafer operation, executing the regulated wafer operation No semiconductor device is formed from the calibration wafer after step − How to include. In the method of performing a plasma recipe for a product, A processing chamber comprising a product access, wherein at least one product may be transferred between an interior and an exterior of the processing chamber via the product access; Means for performing a conditioning wafer operation comprising means for performing plasma processing on each of a plurality of conditioning wafers that are successively loaded into the processing chamber via the product access; Means for monitoring optical emission of the plasma in the chamber during operation of the means for performing the plasma processing; Means for disabling means for executing the adjusting wafer operation based on the monitoring means; And Means for executing a production wafer operation after activation of said disabling means, wherein said production wafer operation execution means comprises means for performing a plasma recipe on a production wafer loaded into said processing chamber via said product access. Wherein the plasma recipe comprises at least one plasma step of producing a desired result for the production wafer, System comprising. A method of selecting at least one endpoint for plasma processing having at least a first endpoint, wherein the plasma treatment achieves a first predetermined result, Performing a first plasma treatment; Acquiring an optical emission of the plasma in the processing chamber at at least a plurality of time points during the performing step, wherein the acquiring includes acquiring a current optical emission segment at each of the plurality of time points; Current optical emission segments include wavelengths of at least about 250 nanometers to about 1000 nanometers at a first wavelength resolution that does not exceed about 1 nanometer, defining a first wavelength range, wherein the first wavelength resolution comprises: Means that the wavelength spacing between each adjacent pair of wavelengths obtained over the first wavelength range by the acquiring step does not exceed about 1 nanometer; Analyzing the optical emission from the acquiring step; And Selecting at least one endpoint indicator from the analyzing step for the first endpoint How to include. 451. The method of claim 450, The analyzing step, Generating a plot of intensity versus time for a plurality of wavelengths in the first wavelength range from the current optical emission segment from the acquiring step, wherein the generating step comprises the performing step for the intensities of each of the plurality of wavelengths Illustrating the time-based effect of-; Analyzing the plot after the performing step; Receiving information regarding a first time point estimate for the first plasma processing to reach the first endpoint; And Identifying at least one said plot from said generating step with a noticeable intensity change at least generally corresponding to said first time point estimate, wherein said selecting step comprises said first end point for said first plasma processing; A possible candidate to be an indicator of, comprising selecting the wavelength associated with the at least one plot from the identifying step; Way. 451. The method of claim 451 The multiple wavelengths for the generating step are selected without chemical knowledge associated with the first plasma. Way. 451. The method of claim 451 The distinct change in the checking step is a change in the slope of the at least one plot. Way. 451. The method of claim 451 The optical emission analysis step includes taking note of the pattern of each plot from the identification step, wherein each pattern is at least potentially corresponding to the first endpoint for the first plasma processing step Wherein the method further comprises selecting at least one of the patterns as an endpoint pattern representing the first endpoint Way. 454. The method of claim 454, wherein Allowing each endpoint pattern to experience a first change and still indicate the first endpoint for subsequent execution of the first plasma process in the same process chamber, wherein the first change is an intensity shift, Selected from the group consisting of temporal shift, zoom in, zoom out, and combinations thereof- How to include more. 451. The method of claim 451 Repeating said performing step, said acquiring step and said optical emission analysis step, wherein said method compares the results from said wavelength selection step and sets said at least one wavelength to said first plasma from said comparing step. Selecting as the indicator of the first endpoint of step − How to include more. 451. The method of claim 451 The generating step includes generating the plot for the respective wavelength within the first wavelength range from the current optical emission segment from the acquisition step available based on the first wavelength resolution. Way. 451. The method of claim 451 Defining at least a portion of one of the slots from the checking step by a first equation so as not to include a portion of the slot with the distinct change, wherein the first of subsequent executions of performing the first plasma processing step The first endpoint is based on when the plot of the change in intensity over time of the first wavelength on which the first equation is based from the subsequent execution is no longer adapted to the first equation. How to include more. 451. The method of claim 451 Defining at least a portion of one of the slots from the checking step by a first equation so as not to include a portion of the slot with the distinct change, wherein the first of subsequent executions of performing the first plasma processing step 1 end point is based on when the output of the derivative of the first equation for the subsequent execution is changed by more than a predetermined amount How to include more. 451. The method of claim 450, The analyzing step, Generating a plot of intensity versus time for a plurality of wavelengths in the first wavelength range from the current optical emission segment from the acquiring step, wherein the generating step comprises the performing step for the intensities of each of the plurality of wavelengths Exemplifying a time-based effect of the step, wherein said performing, acquiring and analyzing comprise one run; The method, Executing a first stroke; Executing a second stroke; And Identifying the at least one wavelength from the generating step from the first and second strokes, wherein the pattern of at least a portion of the plot of the wavelengths is substantially the same for each of the first and second strokes And there is a first change between the pattern from the first and second strokes, the first change being selected from the group consisting of intensity shift, temporal shift, enlargement, reduction, and combinations thereof; Selecting the at least one wavelength from the identifying step as a possible date as an indicator of the first endpoint for the first plasma treatment; Way. 460. The method of claim 460, The generating step includes generating the plot for each respective wavelength within the first wavelength range of the current optical emission segment from the obtaining step that is available based on the first wavelength resolution. Way. 460. The method of claim 460, Loading product into the processing chamber for each step of executing the first and second strokes, wherein the product from the first stroke has a first thickness and the product from the second stroke Has a second thickness different from the first thickness, wherein the first change is the temporal change − How to include more. 451. The method of claim 450, The analyzing step identifies an intensity peak in at least a portion of the optical emission segment, determines whether the intensity peak from the verifying step is at least substantially disappearing at approximately a point in time at which the first endpoint should occur, and correspondingly Taking note of the wavelengths, wherein the selecting step includes selecting at least one of the corresponding wavelengths as the endpoint indicator of the first endpoint Way. 451. The method of claim 450, The analyzing step includes determining whether an intensity peak in at least a portion of the optical emission segment first appears at an approximate point in time when the first endpoint should occur and taking note of the corresponding wavelength, wherein the selecting step comprises: Selecting at least one of the corresponding wavelengths as the endpoint indicator of the first endpoint Way. 451. The method of claim 450, The analyzing step identifies an intensity peak in at least a portion of the optical emission segment, determines whether the intensity peak from the identifying step appears first at an approximate point in time when the first endpoint should occur, and determines the corresponding wavelength. Including taking notes, The analyzing step further comprises determining whether an intensity peak in at least a portion of the optical emission segment appears first at an approximate point in time at which the first endpoint should occur, and taking note of the corresponding wavelength, Wherein the selecting step includes selecting at least one of the corresponding wavelengths as the endpoint indicator of the first endpoint. Way. 451. The method of claim 450, The analyzing step includes identifying an intensity peak from the optical emission segment reaching a steady state at approximately a point in time at which the first endpoint should occur, and taking note of the corresponding wavelength, wherein And the selecting step includes selecting at least one of the corresponding wavelengths as the endpoint indicator of the first endpoint. Way. 451. The method of claim 450, The analyzing step identifies an intensity peak from the optical emission segment that has reached a steady state until approximately a time point at which the first endpoint should occur, and at which point the intensity peak has experienced a change, Taking note of the wavelength, wherein the selecting step includes selecting at least one of the corresponding wavelengths as the endpoint indicator of the first endpoint. Way. 451. The method of claim 450, Setting a wavelength range to be used for evaluating whether subsequent execution of said performing step in said processing chamber is proceeding according to a first standard, wherein said setting step depends on said selection step- How to include more. The method of claim 468, wherein The wavelength range from the setting step includes the wavelength of the at least one indicator from the selection step. Way. The method of claim 468, wherein The wavelength range from the setting step includes a bandwidth of about 50 nanometers. Way. A method of monitoring plasma processing in a processing chamber, Executing a first plasma process in the processing chamber; Obtaining optical emission data over a first wavelength region having a first bandwidth during the first plasma processing; Selecting a second wavelength region having a second bandwidth, wherein the second bandwidth is less than the first bandwidth and the second wavelength region is entirely contained within the first wavelength region; And Monitoring a first aspect of the first plasma process using a first portion of the optical emission data from the obtaining step associated with the first plasma process, wherein the first aspect of the optical emission 1 part is limited to the second wavelength region- How to include. 471. The method of claim 471 The first wavelength region comprises a wavelength of at least about 250 nanometers to about 1000 nanometers, The acquiring step associated with the first plasma treatment comprises acquiring the optical emission data at least every one nanometer over the first wavelength region and at least every second during at least a substantial portion of the first plasma treatment. Containing Way. 471. The method of claim 471 Innumerable numbers of the second wavelength bandwidths are available for the selection step Way. 471. The method of claim 471 The first plasma treatment comprises a first endpoint, when the first plasma treatment has affected a predetermined first result, The monitoring step includes monitoring the plasma processing for the first endpoint using the second wavelength region. Way. 471. The method of claim 471 The monitoring step includes comparing the first portion of the optical emission data with optical emission data from a previous execution of the same first plasma process in the same processing chamber. Way. 474. The method of claim 475 The second wavelength bandwidth is at least 50 nanometers Way. 471. The method of claim 471 The intensity of the optical emission data and the corresponding optical emission data may vary over the first plasma process, The monitoring includes generating a first plot of area versus time of the first portion of the optical emission data, The area is defined by the intensity of the first portion of the optical emission data at a given point in time of the first plasma processing. Way. 477. The method of claim 477 Displaying the first plot on at least one monitor How to include more. 477. The method of claim 477 The monitoring step further includes generating a second plot of change versus time in the area of the first portion of the optical emission data. Way. 479. The method of claim 479, Displaying the second plot on at least one monitor How to include more. 479. The method of claim 479, Identifying a first endpoint of the first plasma process when a predetermined event occurs in relation to the second plot How to include more. 471. The method of claim 471 The intensity of the optical emission data and the corresponding optical emission data may vary over the first plasma process, Said monitoring comprises generating a first plot of change versus time in the region of said first portion of said optical emission data, The area is defined by the intensity of the first portion of the optical emission data at a given point in time of the first plasma processing. Way. The method of claim 482, wherein Identifying a first endpoint of the first plasma process when a predetermined event occurs in relation to the second plot How to include more. 471. The method of claim 471 Selecting a third wavelength region having a third bandwidth, wherein the third bandwidth is less than the first bandwidth, the third wavelength region being entirely contained within the first wavelength region, and wherein the second and second 3 wavelength ranges are different- How to include more. The method of claim 484, Monitoring a second aspect of the first plasma process using a second portion of the optical emission data from the first plasma process confined to the third wavelength region, wherein the first plasma process Includes first and second steps defining the first and second aspects, respectively, wherein the first step of the first plasma treatment provides a predetermined first result and wherein the first step of the first plasma treatment Step 2 provides a second predetermined result different from the first predetermined result − How to include more. The method of claim 484, The monitoring further comprises monitoring the first aspect further using a second portion of the optical emission data from the acquisition step confined to the third wavelength band. Way. 471. The method of claim 471 Using a first optical set, wherein said obtaining step associated with said first plasma processing uses said first optical set Further comprising, the method, Executing a second plasma process in the processing chamber; Acquiring optical emission data over the first wavelength region during the second plasma processing using the first optical set; Selecting a third wavelength region having a third wavelength bandwidth, wherein the third wavelength region is entirely contained within the first wavelength region, the third wavelength bandwidth is less than the first wavelength bandwidth, and the third wavelength An area is different than the second wavelength bandwidth; And Monitoring at least one aspect of the second plasma process using a portion of the optical emission data from the obtaining step associated with the second plasma process confined to the third wavelength region; Way. 471. The method of claim 471 Storing the optical emission data from the acquiring step in a computer-readable storage medium; And Retrieving said first portion of said optical emission data from said computer-readable storage medium, wherein said retrieving step is performed in response to said selecting step and said monitoring step uses said retrieving step; How to include more. 471. The method of claim 471 Displaying first and second data fields on a monitor, wherein the selecting comprises inputting a first wavelength into the first data field and a second wavelength into the second data field, The extremes of the second wavelength region are defined by the first and second wavelengths. How to include more. A method of selecting a first wavelength region to identify a first endpoint associated with a first plasma treatment, wherein the first endpoint is when the first predetermined result has been affected by the first plasma treatment, and the first endpoint Wherein the wavelength region has a first bandwidth defined between extremes of the first wavelength region; Executing the first plasma process in a first processing chamber; Acquiring optical emission data over a second wavelength region during the execution step, wherein the intensity of the optical emission corresponding to the optical emission data is changed during the first plasma processing, and the second wavelength region is Has a second bandwidth defined between extremes of the second wavelength range − Selecting a third wavelength bandwidth less than the second wavelength bandwidth; Performing a plotting step for a plurality of different endpoint evaluation wavelength regions in the second wavelength region, wherein each endpoint evaluation wavelength region is defined by the third bandwidth, and each endpoint evaluation wavelength The plotting for an area includes generating a plot of a change in an area of a first portion of the optical emission data from the endpoint evaluation wavelength area over time, wherein the area is indicative of the first plasma treatment. Defined by the intensity of the portion of the optical emission data at a given point in time; And Selecting the first wavelength region by observing a plurality of the plots provided by the execution of the floating step. How to include. 490. The method of claim 490 wherein The second wavelength region comprises a wavelength in the range of at least about 250 nanometers to about 1000 nanometers, The acquiring step includes acquiring the optical emission data at least every one nanometer over the first wavelength range and at least every second for at least a substantial portion of the first plasma treatment. Way. 490. The method of claim 490 wherein The third wavelength bandwidth is about 5 nanometers Way. 490. The method of claim 490 wherein The third wavelength bandwidth does not exceed about 10 nanometers Way. 490. The method of claim 490 wherein Adjacent endpoint evaluation wavelength regions overlap Way. 490. The method of claim 490 wherein Wherein each endpoint evaluation wavelength wavelength region is in a range from a first extreme value to a second extreme value, wherein each of the first and second extreme values corresponds to a particular wavelength and distance corresponding to the third wavelength bandwidth; Using the first pattern starting at a first wavelength to select the plurality of endpoint evaluation wavelength regions, and applying the third wavelength bandwidth to the first wavelength to define a current endpoint evaluation wavelength region. Adding; Adding the third wavelength bandwidth to the second extreme value of the current endpoint evaluation wavelength region to define a new current endpoint evaluation wavelength region; And repeating the step of adding the third wavelength bandwidth to the second extreme value several times. Way. 490. The method of claim 490 wherein The second wavelength region comprises a wavelength in the range of at least about 250 nanometers to about 1000 nanometers, The acquiring step includes acquiring the optical emission data at least every one nanometer over the first wavelength range and at least every second for at least a substantial portion of the first plasma treatment; The third wavelength bandwidth is about 5 nanometers, The plurality of endpoint evaluation wavelength ranges include wavelengths of at least 1000 nanometers, ranging from 250-255 nanometers, 255-260 nanometers, 260-265 nanometers, 265-270 nanometers, and the like. Way. 490. The method of claim 490 wherein The step of selecting the first wavelength region may include identifying at least one of the plots that have experienced a predetermined event at an approximate point in time at which the first endpoint should occur and as the first wavelength region to identify the first endpoint. Using the endpoint evaluation wavelength region corresponding to the at least one of the plots. Way. 490. The method of claim 490 wherein Selecting the first wavelength region identifies each of the plots that have experienced a given event at approximately a time when the first endpoint should occur and identifies the corresponding endpoint evaluation wavelength region as a first endpoint candy date. Doing; Grouping each of the first endpoint candy dates together into an endpoint group, wherein the wavelength spacing between the first endpoint candy dates in the endpoint group does not exceed about 10 nanometers; And defining the first wavelength region to identify the first endpoint as being between the smallest wavelength in one of the endpoint groups and the largest wavelength in the same endpoint group. Way. In the method for monitoring the plasma treatment, Initiating a first plasma process in the first processing chamber; Acquiring optical emission data in the first plasma process; Storing the optical emission data from the acquiring step in a computer-readable storage medium system; Executing a first monitoring step using a plasma monitoring module stored in the computer-readable storage medium system, wherein performing the first monitoring step comprises using at least a portion of the optical emission data from the obtaining step. 1 monitoring at least one aspect of the plasma process; Terminating the first plasma process; Making at least one adjustment to the plasma monitoring after the execution of the first monitoring step; And Performing a second plasma process using a plasma monitoring module after making the at least one adjustment, wherein the plasma monitoring comprises using at least a portion of the optical emission data from a computer-readable storage system. Monitoring at least one aspect of the first plasma treatment; How to include. 499. The method of claim 499, The acquiring step is performed over a first wavelength region comprising a wavelength in the range of at least about 250 nm to about 1,000 nm, Wherein the acquiring step includes acquiring the optical emission data at least every second during at least one substantial portion of the first plasma treatment and at least every nanometer through the first wavelength range. Way. 499. The method of claim 499, The first plasma treatment includes a first endpoint, which is when it affects a first predetermined result, wherein the at least one aspect associated with the execution of the first monitoring step comprises the first plasma for generation of the first endpoint. Monitoring the process, wherein the at least one aspect associated with the execution of the second monitoring step also includes monitoring the first plasma process for generation of the first endpoint. Way. 499. The method of claim 499, The execution of the first monitoring step comprises comparing at least a portion of the optical emission data from the acquiring step with optical emission data by line execution of the same first plasma process in the same processing chamber, Execution of the second monitoring step includes comparing at least a portion of the optical emission data from the acquiring step with the optical emission data by preliminary execution of the first plasma process in the processing chamber. Way. 499. The method of claim 499, The step of performing at least one adjustment, The wavelength of the optical emission data in the first plasma process different from that used in the execution of the first monitoring step and the ingot used in the execution of the first monitoring step are different. A wavelength region of the optical emission data in the first plasma process used in the execution of the second monitoring step, a monitoring technique different from the monitoring technique used in the first monitoring step and used in the execution of the second monitoring step. Technique, the time at which execution of the first monitoring step is different from the time started by the first plasma process and the time at which execution of the second monitoring step is started by the first plasma process, the first end point associated with the first plasma process The first plasma being different from the time in the first plasma process before being invoked by the execution of the first monitoring step The time in the first plasma process before the first endpoint associated with the process is not called by the execution of the second monitoring step, the first after the first endpoint is not called by the execution of the first monitoring step. Time in the first plasma process that is different from the time in the first plasma process and that the first endpoint is not called by the execution of the first monitoring step, wherein the first endpoint is determined by the first plasma process. 1 when affecting a predetermined result-and changing at least one parameter of said plasma monitoring module selected from the group consisting of Way. 499. The method of claim 499, Execution of the second monitoring step includes re-executing the first plasma processing for the first plasma monitoring after at least one adjustment step. Way. 499. The method of claim 499, The first processor chamber is located in a first clean room, and the execution of the second monitoring step is performed outside of the first clean room. Way. A plurality of chamber clusters, wherein each chamber cluster comprises at least one plasma processing chamber; At least one plasma monitoring system associated with at least one processing chamber of one of the chamber clusters; A clean room system comprising at least one clean room, wherein each chamber cluster is contained within the clean room system; A master remote station operatively associated with said plasma monitoring system of each chamber cluster, wherein said master remote station lies outside of said clean room and comprises a first display and a first data input device; Each chamber cluster remote station for each chamber cluster, wherein the chamber cluster remote station is operatively interconnected with at least one plasma monitoring system of the chamber cluster associated therewith, wherein each chamber cluster remote station is Positioned outside of the clean room system and including a second display and a second data input device, wherein each chamber cluster remote station is interconnected with each plasma monitoring system of only one chamber cluster; Plasma processing system comprising. 506. The method of claim 506, Each of the plurality of chamber clusters is located within the same clean room. system. 506. The method of claim 506, The first chamber cluster lies in the first clean room, and the second chamber cluster lies in the second clean room. system. 506. The method of claim 506, The master remote station has different access rights to the plasma monitoring system of the first chamber cluster than the chamber cluster remote station for the first chamber cluster. system. 506. The method of claim 506, The master remote station has greater access to the plasma monitoring system of the first chamber cluster than the chamber cluster remote station for the first chamber cluster. system. 506. The method of claim 506, The chamber cluster remote station for the first chamber cluster has a first access right to the plasma monitoring system for the first chamber cluster, A chamber cluster remote station for the second chamber cluster has a second access right to each plasma monitoring system for the second chamber cluster; The first and second access are different in scope system. 506. The method of claim 506, Each plasma monitoring system includes a plurality of modules; The master remote station accesses each of the plurality of modules of the respective plasma monitoring system; A chamber cluster remote station for each chamber cluster accesses only the plurality of modules associated with the plasma monitoring system. system. 506. The method of claim 506, Wherein each plasma monitoring system comprises a data player module, a statistical analysis module, a control module and a data review module, wherein the given data player module of the given any plasma monitoring system of the given any chamber cluster is given to the given Allow data on the plasma processing applied to the plasma processing within the given chamber cluster to be reproduced through the given plasma monitoring system after making changes to the plasma monitoring system, The statistical analysis module of the given plasma monitoring system allows for at least one type of statistical analysis to be performed in connection with the given chamber cluster, The control module of the given plasma monitoring system permits modification of at least one operation parameter of the given plasma monitoring system, The data review module of the given plasma monitoring system is allowed for a real time review of the plasma processing currently executed within the given chamber cluster. system. 513. The method of claim 513, None of the chamber cluster remote stations access the control module of the plasma monitoring system associated with them, and the master remote system accesses the control module of each plasma monitoring system. system.