KR102421610B1 - Electrostatic chuk system, film formation apparatus, suction method, film formation method, and manufacturing method of electronic device - Google Patents

Abstract

An electrostatic chuck system according to the present invention is an electrostatic chuck system for adsorbing an adsorbent, comprising: an electrostatic chuck comprising an adsorption surface for adsorbing the adsorbed body and an electrode part; , an adsorption auxiliary means for setting an adsorption starting point and guiding an adsorption progress direction when the adsorbed body is adsorbed by the electrostatic chuck.

Description

Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and manufacturing method of an electronic device

The present invention relates to an electrostatic chuck system, a film forming apparatus, an adsorption method, a film forming method, and a method of manufacturing an electronic device.

In the manufacture of an organic EL display device (organic EL display), when an organic light emitting element (organic EL element; OLED) constituting an organic EL display device is formed, a vapor deposition material evaporated from a vapor deposition source of the film forming apparatus is used as a pixel pattern. By depositing on the substrate through the formed mask, an organic material layer or a metal layer is formed.

In the deposition apparatus of the depo-up method, the deposition source is installed under the vacuum container of the deposition apparatus, the substrate is disposed on the top of the vacuum container, and deposition is performed on the lower surface of the substrate. In the vacuum container of this upward deposition type film forming apparatus, since only the periphery of the lower surface of the substrate is held and supported by the substrate holder, the substrate sags by its own weight, which is one factor that lowers the deposition accuracy. is becoming Also in the film forming apparatus of a method other than the upward deposition method, there is a possibility that the substrate may sag due to its own weight.

A technique using an electrostatic chuck is being studied as a method for reducing the sagging of the substrate due to its own weight. That is, sagging of the substrate can be reduced by adsorbing the upper surface of the substrate over the entire surface with the electrostatic chuck.

Patent Document 1 proposes a technique for adsorbing a substrate and a mask with an electrostatic chuck.

Patent Publication No. 2007-0010723

However, in the prior art, when a mask is adsorbed over a substrate with an electrostatic chuck, there is a problem in that wrinkles remain on the mask after adsorption.

An object of the present invention is to satisfactorily adsorb both the first adsorbed body and the second adsorbed body to the electrostatic chuck.

An electrostatic chuck system according to an embodiment of the present invention is an electrostatic chuck system for adsorbing an adsorbent, comprising an adsorption surface for adsorbing the adsorbed body and an electrode part, It characterized in that it comprises an electrostatic chuck for adsorbing , and adsorption auxiliary means for setting an adsorption starting point and guiding a direction of adsorption when the adsorbed body is adsorbed by the electrostatic chuck.

A film forming apparatus according to an embodiment of the present invention is a film forming apparatus for forming a film on a substrate through a mask, comprising an electrostatic chuck system for adsorbing a substrate as a first adsorbent and a mask as a second adsorbent; The electrostatic chuck system is characterized in that it is the above-described electrostatic chuck system.

An adsorption method according to an embodiment of the present invention is a method for adsorbing an adsorbent, comprising: a first adsorption step of adsorbing a first adsorbed body by applying a first potential difference to an electrode part of an electrostatic chuck; a second adsorption step of adsorbing a second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween by applying a second potential difference equal to or different from the first potential difference, wherein the second adsorption step comprises: a suction step of pulling at least a portion of the second adsorbed body toward the first adsorbed body by a magnetic force from a magnetic force generating unit having a plurality of magnets having different magnitudes of magnetic force disposed on the opposite side of the adsorption surface of the electrostatic chuck; , an adsorption step of adsorbing the second adsorbed body by applying the second potential difference to the electrode part while bringing the second adsorbed body drawn in the suction step into contact with the first adsorbed body do.

A film formation method according to an embodiment of the present invention is a film formation method for depositing a deposition material on a substrate through a mask, comprising: loading a mask into a vacuum container; loading the substrate into the vacuum container; and an electrode of an electrostatic chuck a first adsorption step of adsorbing the substrate to the adsorption surface of the electrostatic chuck by applying a first potential difference to the electrostatic chuck; a second adsorption step of adsorbing the mask with a substrate interposed therebetween; and evaporating the deposition material while the substrate and the mask are adsorbed to the electrostatic chuck to form a deposition material on the substrate through the mask. Including, wherein the second adsorption step, by the magnetic force from the magnetic force generator having a plurality of magnets having different magnitudes of magnetic force disposed on the opposite side of the adsorption surface, at least a portion of the mask is attracted to the substrate side. and an adsorption step of adsorbing the mask by applying the second potential difference to the electrode part while bringing the mask drawn in the suction step into contact with the substrate.

A method of manufacturing an electronic device according to an embodiment of the present invention is characterized in that the electronic device is manufactured using the above-described film forming method.

According to the present invention, both the first adsorbed body and the second adsorbed body can be satisfactorily adsorbed without leaving wrinkles by the electrostatic chuck.

1 : is a schematic diagram of a part of the manufacturing apparatus of an electronic device.
2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
3 is a block diagram of an electrostatic chuck system according to an embodiment of the present invention.
4 is a schematic plan view of an electrostatic chuck according to an embodiment of the present invention.
5 is a diagram schematically illustrating an arrangement relationship between a magnetic force generating unit, an electrostatic chuck, and a mask in a mask adsorption process by an electrostatic chuck according to an embodiment of the present invention.
6 is a process diagram showing a procedure for adsorbing a substrate onto an electrostatic chuck.
Fig. 7 is a process diagram showing a procedure of adsorption of the mask to the electrostatic chuck.
8 : is a schematic diagram which shows an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, size, material, shape, etc. are intended to limit the scope of the present invention to these unless specifically stated otherwise. not.

INDUSTRIAL APPLICABILITY The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, a film made of a polymer material, or a metal can be selected. For example, the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate. Moreover, arbitrary materials, such as an organic material and a metallic material (metal, metal oxide, etc.), can be selected also as a vapor deposition material. In addition to the vacuum vapor deposition apparatus demonstrated in the following description, this invention is applicable also to the film-forming apparatus containing a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus. The technique of this invention is specifically applicable to manufacturing apparatuses, such as an organic electronic device (For example, an organic light emitting element, a thin film solar cell), an optical member. Among them, an organic light emitting device manufacturing apparatus for forming an organic light emitting device by evaporating a vapor deposition material and depositing it on a substrate through a mask is one of preferred application examples of the present invention.

<Electronic device manufacturing apparatus>

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows typically the structure of a part of the manufacturing apparatus of an electronic device.

The manufacturing apparatus of FIG. 1 is used for manufacture of the display panel of the organic electroluminescent display for smartphones, for example. In the case of a display panel for a smartphone, for example, a substrate of the 4.5th generation (about 700 mm × about 900 mm), a full size of the 6th generation (about 1500 mm × about 1850 mm), or a half-cut size (about 1500 mm × After film formation for formation of an organic EL element is performed on a substrate having a thickness of about 925 mm, the substrate is cut out to produce a plurality of small-sized panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay device connecting between the cluster apparatuses 1 .

The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing a process (eg, film formation) on a substrate S, a plurality of mask stock apparatuses 12 for accommodating the masks M before and after use; A transfer chamber 13 disposed at the center thereof is provided. The transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12 as shown in FIG. 1 .

In the transfer chamber 13 , a transfer robot 14 that transfers a substrate and a mask is disposed. The transfer robot 14 transfers the substrate S from the pass chamber 15 of the relay apparatus arranged on the upstream side to the film forming apparatus 11 . Moreover, the conveyance robot 14 conveys the mask M between the film-forming apparatus 11 and the mask stock apparatus 12. As shown in FIG. The transfer robot 14 may be, for example, a robot having a structure in which a robot hand holding the substrate S or the mask M is mounted on an articulated arm.

In the film-forming apparatus 11 (it is also called a vapor deposition apparatus), the vapor deposition material accommodated in an evaporation source is heat-evaporated by a heater, and is vapor-deposited on a board|substrate through a mask. The transfer of the substrate S with the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (deposition) ) and the like are performed by the film forming apparatus 11 .

In the mask stock apparatus 12 , a new mask and a used mask to be used in the film forming process in the film forming apparatus 11 are divided and stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to a cassette of the mask stock apparatus 12 , and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11 . return to

The cluster device 1 has a pass chamber 15 for transferring the substrate S from the upstream side in the flow direction of the substrate S to the cluster device 1 , and the cluster device 1 on which the film forming process is completed. A buffer chamber 16 for transferring the substrate S to another cluster device on the downstream side is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side, and receives one of the film forming apparatuses 11 in the cluster apparatus 1 (eg, the film forming apparatus 11a). ) is returned to In addition, the transfer robot 14 receives the substrate S on which the film forming process in the cluster apparatus 1 has been completed from one of the plurality of film forming apparatuses 11 (eg, the film forming apparatus 11b), and is connected to the downstream side. It is transferred to the buffer chamber 16 .

Between the buffer chamber 16 and the pass chamber 15, a turning chamber 17 for changing the direction of the substrate is provided. In the turning chamber 17 , a transfer robot 18 for receiving the substrate S from the buffer chamber 16 , rotating the substrate S by 180 degrees, and transferring the substrate S to the pass chamber 15 is installed. Thereby, the direction of the substrate S becomes the same in the upstream cluster apparatus and the downstream cluster apparatus, and the substrate processing becomes easy.

The pass chamber 15, the buffer chamber 16, and the vortex chamber 17 are so-called relay devices that connect between the cluster devices. , including at least one of the turning rooms.

The film forming apparatus 11 , the mask stock apparatus 12 , the transfer chamber 13 , the buffer chamber 16 , the vortex chamber 17 and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting device. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1 , but the present invention is not limited thereto, and other types of apparatuses or chambers may be provided, and arrangements between these apparatuses or chambers may vary. have.

Hereinafter, the specific structure of the film-forming apparatus 11 is demonstrated.

<Film forming device>

2 is a schematic diagram showing the configuration of the film forming apparatus 11 . In the following description, an XYZ rectangular coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed parallel to the horizontal plane (XY plane) during film formation, the short side direction (a direction parallel to the short side) of the substrate S is the X direction, and the long side direction (the direction parallel to the long side) is the Y direction. do it with Also, the rotation angle around the Z axis is denoted by θ.

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 installed in the vacuum container 21 , and a mask support unit 23 , , an electrostatic chuck 24 , and an evaporation source 25 .

The substrate holding unit 22 receives and holds the substrate S conveyed by the transfer robot 14 installed in the transfer chamber 13 , and is also called a substrate holder.

A mask support unit 23 is installed under the substrate support unit 22 . The mask holding unit 23 is a means for receiving and holding the mask M transported by the transport robot 14 installed in the transport chamber 13 , and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is placed on the mask support unit 23 . In particular, a mask used for manufacturing an organic EL device for a smartphone is a metal mask having a fine opening pattern formed therein, and is also called a Fine Metal Mask (FMM).

An electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is installed above the substrate support unit 22 . The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (eg, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rahbek force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. Since the electrostatic chuck 24 is a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be satisfactorily absorbed by the electrostatic chuck 24 . For example, in the case where the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, an adsorbent such as the substrate S passes through the dielectric matrix. A polarized charge having a polarity opposite to that of the metal electrode is induced, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by an electrostatic attraction therebetween. The electrostatic chuck 24 may be formed as a single plate or may have a plurality of sub-plates. In addition, even when it is formed of one plate, it is also possible to control the electrostatic attraction to be different depending on the position in one plate by including a plurality of electric circuits therein.

In the present invention, such an electrostatic chuck 24 is used to adsorb and hold not only the substrate S (first adsorbed body) but also the mask (M, second adsorbed body) positioned below the substrate.

That is, in the present embodiment, the substrate S (first adsorbed body) placed vertically downward by controlling the potential difference applied to the electrostatic chuck 24 is first adsorbed and held by the electrostatic chuck 24 . Thereafter, the lower side of the substrate S (the opposite side of the electrostatic chuck 24 with the substrate S interposed therebetween) by again controlling the potential difference applied to the electrostatic chuck 24 with the substrate S adsorbed therebetween. The mask (M, the second adsorbed body) positioned at . is also further adsorbed and held over the substrate (S, the first adsorbed body) using the electrostatic chuck 24 .

In particular, in the process of adsorbing the mask M over the substrate S using the electrostatic chuck 24 as described above, a magnetic force generating means such as a magnet is used in combination. Specifically, a magnetic force generating unit 33 as a magnetic force generating means is additionally provided at an upper position (a position opposite to the adsorption surface) of the electrostatic chuck 24 , and the mask M is applied to the substrate S using the electrostatic chuck 24 . When adsorbing over, a part of the mask M is attracted by the magnetic force generating unit 33 , so that a part of the pulled mask M becomes a starting point of adsorption by the electrostatic chuck 24 . In addition to the setting of the adsorption starting point, the direction of adsorption of the mask M with respect to the electrostatic chuck 24 is also guided and controlled through driving control of the magnetic force generating unit 33 located above the electrostatic chuck 24 . . This will be described later with reference to FIGS. 5 and 7 .

Although not shown in FIG. 2 , by providing a cooling mechanism (eg, a cooling plate) for suppressing the temperature rise of the substrate S on the opposite side to the adsorption surface of the electrostatic chuck 24 , organic substances deposited on the substrate S are provided. It is good also as a structure which suppresses the quality change and deterioration of a material.

The deposition source 25 includes a crucible (not shown) in which the deposition material to be formed on the substrate is accommodated, a heater (not shown) for heating the crucible, and the deposition material scatters to the substrate until the evaporation rate from the deposition source becomes constant. and a shutter (not shown) that blocks the screen. The deposition source 25 may have various configurations according to uses, such as a point deposition source or a linear deposition source.

Although not shown in Fig. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of a film deposited on a substrate.

A substrate Z actuator 26 , a mask Z actuator 27 , an electrostatic chuck Z actuator 28 , a positioning mechanism 29 , and the like are provided on the upper outer side (atmospheric side) of the vacuum vessel 21 . These actuators and positioning devices are constituted by, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for elevating (moving in the Z direction) the substrate supporting unit 22 . The mask Z actuator 27 is a driving means for raising/lowering the mask support unit 23 (moving in the Z direction). The electrostatic chuck Z actuator 28 is a driving means for lifting (moving in the Z direction) the electrostatic chuck 24 .

In one embodiment of the present invention, the film forming apparatus 11 includes a magnetic force generating unit driving mechanism (not shown) for raising and lowering the magnetic force generating unit 33 between the magnetic force application position and the retracted position.

The positioning mechanism 29 is a driving means for alignment of the electrostatic chuck 24 . The positioning mechanism 29 rotates the entire electrostatic chuck 24 with respect to the substrate support unit 22 and the mask support unit 23 in the X-direction, the Y-direction, and θ. In the present embodiment, alignment is performed to adjust the relative positions of the substrate S and the mask M by positioning the electrostatic chuck 24 in the XYθ direction while the substrate S is adsorbed.

On the outer upper surface of the vacuum container 21, in addition to the driving mechanism described above, an alignment camera for photographing the alignment marks formed on the substrate S and the mask M through a transparent window installed on the upper surface of the vacuum container 21 ( 20) may be installed. In the present embodiment, the alignment camera 20 is provided at a position corresponding to the diagonal of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at a position corresponding to four corners of the rectangle. You can do it.

The camera 20 for alignment provided in the film forming apparatus 11 of this embodiment is a camera for fine alignment used for adjusting the relative position of the board|substrate S and the mask M with high precision, The viewing angle is narrow, It is a high-resolution camera. In addition to the camera 20 for fine alignment, the film-forming apparatus 11 may include the camera for rough alignment with a relatively wide viewing angle and low resolution.

The position adjustment mechanism 29 is based on the positional information of the board|substrate S, 1st to-be-adsorbed body, and the mask M, 2nd to-be-adsorbed body acquired with the camera 20 for alignment, the board|substrate S, 1st to-be-adsorbed body. ) and the mask (M, 2nd to-be-adsorbed body) are moved relatively, and alignment which adjusts a position is performed.

The film forming apparatus 11 includes a control unit (not shown). A control part has functions, such as conveyance and alignment of the board|substrate S, control of the vapor deposition source 25, and control of film-forming. The control unit is configurable by, for example, a computer having a processor, memory, storage, I/O, and the like. In this case, the function of the control unit is realized by the processor executing the program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, an embedded computer or a programmable logic controller (PLC) may be used. Alternatively, some or all of the functions of the control unit may be configured by circuits such as ASICs or FPGAs. Moreover, a control part may be provided for each film-forming apparatus, and it may be comprised by one control part controlling a plurality of film-forming apparatuses.

<Electrostatic chuck system>

An electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS. 3 to 5 .

3 is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, and FIG. 4 is a schematic plan view of the electrostatic chuck 24 . As shown in FIG. 3 , the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24 , a potential difference applying unit 31 , a potential difference controlling unit 32 , and a magnetic force generating unit 33 .

The potential difference applying unit 31 applies a potential difference for generating electrostatic attraction to the electrode portion of the electrostatic chuck 24 .

The potential difference control unit 32 starts the application of the potential difference and the magnitude of the potential difference applied to the electrode by the potential difference applying unit 31 as the adsorption process of the electrostatic chuck system 30 or the deposition process of the film forming apparatus 11 proceeds. The timing, the holding time of the potential difference, the application sequence of the potential difference, and the like are controlled. For example, the potential difference controller 32 may independently control the application of a potential difference to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In the present embodiment, the potential difference control unit 32 is implemented separately from the control unit of the film forming apparatus 11 , but the present invention is not limited thereto, and may be integrated into the control unit of the film forming apparatus 11 .

The electrostatic chuck 24 includes an electrode unit that generates an electrostatic adsorption force for adsorbing an object to be adsorbed (eg, the substrate S and the mask M) on the adsorption surface, and the electrode unit includes a plurality of sub-electrode units 241 to 249 . may include. For example, as shown in FIG. 4 , the electrostatic chuck 24 according to the present embodiment may have a direction parallel to a long side of the electrostatic chuck 24 (Y direction) and/or a direction parallel to a short side of the electrostatic chuck 24 . It includes a plurality of sub-electrode units 241 to 249 divided along (X direction).

Each sub-electrode portion includes an electrode pair 34 to which positive (first polarity) and negative (second polarity) potentials are applied to generate electrostatic attraction force. For example, each electrode pair 34 includes a first electrode 341 to which a positive potential is applied and a second electrode 342 to which a negative potential is applied.

The first electrode 341 and the second electrode 342 have a comb shape, respectively, as shown in FIG. 4 . For example, the first electrode 341 and the second electrode 342 each have a plurality of comb portions and a base to which the plurality of comb portions are connected. The base of each electrode 341, 342 supplies an electric potential to a plurality of comb portions, and the plurality of comb portions generates an electrostatic attraction force between it and an adsorbed body. In one sub-electrode part, each of the comb portions of the first electrode 341 is alternately disposed to face each of the comb portions of the second electrode 342 . In this way, by configuring the comb portions of the electrodes 341 and 342 to face each other and to be sandwiched toward each other, the gap between the electrodes to which different potentials are applied can be narrowed, and a large unequal electric field is formed by the gradient force. The substrate S can be adsorbed.

In the present embodiment, the electrodes 341 and 342 of the sub-electrode units 241 to 249 of the electrostatic chuck 24 have been described as having a comb shape, but the present invention is not limited thereto. As long as it can generate electrostatic attraction, it may have various shapes.

The electrostatic chuck 24 of the present embodiment has a plurality of adsorption portions corresponding to the plurality of sub-electrode portions. For example, as shown in FIG. 4 , the electrostatic chuck 24 of the present embodiment may have nine adsorption units corresponding to the nine sub-electrode units 241 to 249 , but is not limited thereto, and the substrate S ), in order to more precisely control the adsorption of the adsorption unit may have a different number of adsorption units.

The adsorption unit may be installed to be divided in the long side direction (Y-axis direction) and the short side direction (X-axis direction) of the electrostatic chuck 24 , but is not limited thereto, and is divided only in the long side direction or the short side direction of the electrostatic chuck 24 . it might be The plurality of adsorption units may be implemented by a physically single plate having a plurality of electrode parts, or by having each of a plurality of physically divided plates having one or more electrode parts. For example, in the embodiment shown in FIG. 4 , each of the plurality of adsorption units may be implemented to correspond to each of the plurality of sub-electrode units, but one adsorption unit may be implemented to include a plurality of sub-electrode units.

That is, by controlling the application of the potential difference to the sub-electrode units 241 to 249 by the potential difference control unit 32 , as will be described later, the direction (Y direction) intersecting the adsorption advancing direction (X direction) of the substrate S. The three sub-electrode units 241 , 244 , and 247 arranged as . That is, each of the three sub-electrode units 241 , 244 , and 247 can independently control the potential difference, but by controlling the potential difference to be simultaneously applied to the three sub-electrode units 241 , 244 and 247 , these three sub-electrodes The electrode portions 241 , 244 , and 247 can function as one adsorption portion. As long as the substrate can be adsorbed independently to each of the plurality of adsorption units, its specific physical structure and electrical circuit structure may be different.

(Magnetic force generating part)

The electrostatic chuck system 30 of the present invention sets a starting point of adsorption by the electrostatic chuck 24 when an object to be adsorbed, such as a mask M, is adsorbed over a substrate S by the electrostatic chuck 24, In addition, in order to induce control of the adsorption direction, the electrostatic chuck 24 includes a magnetic force generating unit 33 disposed on the upper side (opposite side of the adsorption surface).

FIG. 5 is for explaining the role of the magnetic force generating unit 33 in the mask M adsorption process by the electrostatic chuck 24, and the magnetic force generating unit 33 and the electrostatic chuck 24 in the adsorption process. , the arrangement relationship of the mask M as an adsorbent, etc. is schematically shown. The substrate S, which is the first adsorbed body, has already been adsorbed to the electrostatic chuck 24 by controlling the potential difference, which will be described later.

As illustrated, the magnetic force generating unit 33 disposed on the electrostatic chuck 24 is configured as a magnet unit including a plurality of magnets having different magnitudes of magnetic force. In the illustrated example, three magnets of different magnitudes of magnetic force (a first magnet 33-1 having a strong magnetic force, a second magnet 33-2 having a medium magnetic force, and a third magnet 33-3 having a weak magnetic force) These are sequentially disposed along a plane parallel to the suction surface of the electrostatic chuck 24 at an upper position of the electrostatic chuck 24 . The white arrow visually indicates the magnitude of each magnetic force of the first to third magnets 33-1, 33-2. 33-3, and the range of the magnetic force exerted by each magnet is expressed by the length of the arrow.

In the process of adsorption of the mask M by the electrostatic chuck 24 , in the order of FIGS. 5A to 5C , the magnetic force generating unit 33 moves downward in sequence while adsorption proceeds.

The magnetic force generating unit 33 has a magnetic force application position, which is a position where magnetic force can be applied to the mask M, and a retracted position away from the mask M than the magnetic force application position (the mask M is small enough to not be sucked). It is installed movably between positions where only magnetic force acts or substantially no magnetic force acts. First, in the state of FIG. 5 (a) in which the magnetic force generating unit 33 descends from the retracted position to the first position (first magnetic force application position) where magnetic force can be applied to the mask M, shown by a white arrow As shown, only the strong magnetic force by the first magnet 33-1 acts on one side of the mask M, and the magnetic force by the remaining second and third magnets 33-2 and 33-3 is applied to the mask ( M) is not reached. Accordingly, as illustrated, one end of the mask M on the side of the first magnet 33 - 1 to which the magnetic force is applied is attracted by the magnetic force toward the electrostatic chuck 24 on which the substrate S is adsorbed. When a potential difference capable of adsorbing the mask M over the substrate S is applied to the electrostatic chuck 24 in accordance with the driving control of the magnetic force generating unit 33 , the mask is pulled toward the electrostatic chuck 24 by the magnetic force. (M) At one end, adsorption is started first. That is, it is possible to set the starting point of adsorption of the mask M by the electrostatic chuck 24 through the magnetic force generating unit 33 .

In this way, when the starting point of adsorption is set and the first adsorption is performed at the starting point, when the mask adsorption potential difference is applied to the electrostatic chuck 24, adsorption naturally proceeds to an adjacent site, but in the present invention, This adsorption progress direction can be more actively and precisely controlled induction.

That is, from the state of FIG. 5A in which the suction origin is set, the magnetic force generating unit 33 is lowered toward the electrostatic chuck 24 . When the magnetic force generating unit 33 is lowered to the second magnetic force application position where the magnetic force of the second magnet 33-2 acts on the mask M (FIG. 5(b)), the second magnet 33-2 It is attracted to the electrostatic chuck 24 by the magnetic force up to the mask M corresponding to When the magnetic force generating unit 33 is lowered (FIG. 5(c)), it is attracted toward the electrostatic chuck 24 by the magnetic force up to the other end side of the mask M. In a state in which a potential difference capable of adsorbing the mask M is applied to the electrostatic chuck 24 , the magnetic force generating unit 33 is lowered as described above, thereby changing the adsorption direction of the mask M with respect to the electrostatic chuck 24 . It becomes possible to control more reliably and precisely, and it is possible to suppress the occurrence of wrinkles on the mask when the mask (M) is adsorbed.

The number of the plurality of magnets constituting the magnet unit as the magnetic force generating unit 33 and the arrangement of the plurality of magnets in a plane parallel to the suction surface of the electrostatic chuck 24 are not limited to the configuration of the above-described embodiment. . For example, the plurality of magnets constituting the magnet unit may be arranged along the second direction, which is the long side direction of the electrostatic chuck 24 , in a plane parallel to the suction surface of the electrostatic chuck 24 , or may be arranged diagonally. do.

<Adsorption method by electrostatic chuck system>

Hereinafter, a method of adsorbing the substrate S and the mask M to the electrostatic chuck 24 will be described with reference to FIGS. 6 and 7 .

FIG. 6 shows a process for adsorbing the substrate S to the electrostatic chuck 24 (a first adsorption step).

In the present embodiment, the entire surface of the substrate S is not simultaneously adsorbed to the lower surface of the electrostatic chuck 24 , but adsorption proceeds sequentially from one end to the other along the first side (short side) of the electrostatic chuck 24 . . However, the present invention is not limited thereto, and for example, the substrate may be adsorbed from any one diagonal edge of the electrostatic chuck 24 toward another opposite edge thereof.

In order to sequentially adsorb the substrate S along the first side of the electrostatic chuck 24 , the order of applying the first potential difference for adsorption of the substrate to the plurality of sub-electrode units 241 to 249 may be controlled. , a first potential difference is simultaneously applied to the plurality of sub-electrodes, but the structure or support force of the support part of the substrate support unit 22 supporting the substrate S may be different.

6 illustrates an embodiment in which the substrate S is sequentially adsorbed to the electrostatic chuck 24 by controlling the potential difference applied to the plurality of sub-electrode units 241 to 249 of the electrostatic chuck 24 . Here, the three sub-electrode units 241 , 244 , and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form the first adsorption unit 41 , and a central portion of the electrostatic chuck 24 is formed. The three sub-electrode units 242 , 245 , and 248 form the second adsorption unit 42 , and the remaining three sub-electrode units 243 , 246 , 249 form the third adsorption unit 43 .

First, as shown in FIG. 6A , the substrate S is loaded into the vacuum container 21 of the film forming apparatus 11 , and is mounted on the support part of the substrate support unit 22 . Thereby, the substrate S is supported by the substrate support unit 22 .

Then, the electrostatic chuck 24 descends and moves toward the substrate S supported by the support of the substrate support unit 22 .

When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the potential difference control unit 32 moves from the first suction unit 41 to the third suction unit along the first side (short side) of the electrostatic chuck 24 . Control is performed so that the first potential difference ΔV1 is sequentially applied toward (43).

That is, as shown, the first potential difference is first applied to the first adsorption unit 41 (FIG. 6(b)), and then the first potential difference is applied to the second adsorption unit 42 (FIG. 6(b)). c)), and finally, control so that the first potential difference is applied to the third adsorption unit 43 (FIG. 6(d)).

The first potential difference [Delta]V1 is set to a potential difference of sufficient magnitude to surely adsorb the substrate S to the electrostatic chuck 24 .

As a result, the substrate S is adsorbed to the electrostatic chuck 24 from the side corresponding to the first adsorption part 41 of the substrate S, through the central part of the substrate S, and toward the third adsorption part 43 side. (ie, adsorption of the substrate S proceeds in the X direction), the substrate S may be adsorbed to the electrostatic chuck 24 in a flat manner without leaving a wrinkle in the center of the substrate.

At a predetermined time point after the adsorption process (first adsorption step) of the substrate S to the electrostatic chuck 24 is completed, the potential difference controller 32 controls the electrostatic chuck 24 as shown in FIG. 6(e). lowers the potential difference applied to the electrode part from the first potential difference ΔV1 to the second potential difference ΔV2 having a smaller magnitude than the first potential difference ΔV1.

The second potential difference ΔV2 is an adsorption-holding potential difference for holding the substrate S in a state in which the electrostatic chuck 24 is adsorbed, and the first potential difference applied when the substrate S is adsorbed to the electrostatic chuck 24 ( It is a potential difference smaller than ΔV1). When the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV2, the amount of polarized charge induced in the substrate S correspondingly to the first potential difference ΔV1 is also shown in FIG. 6(e). is reduced compared to the case where ΔV is applied, but after the substrate S is once adsorbed to the electrostatic chuck 24 by the first potential difference ΔV1, even if a second potential difference ΔV2 lower than the first potential difference ΔV1 is applied to the substrate adsorption state can be maintained.

In this way, after the potential difference applied to the electrode portion of the electrostatic chuck 24 is lowered to the second potential difference, the relative relationship between the substrate S adsorbed to the electrostatic chuck 24 and the mask M supported by the mask support unit 23 . Adjust (align) the position.

During the process from the start of adsorption of the substrate S by the electrostatic chuck 24 to substrate alignment, the magnetic force generating unit 33 may be held at the retracted position. Thereby, the magnetic force from the magnetic force generating part 33 does not act on the mask M substantially, and in the state which did not attract the mask M, adsorption|suction of the board|substrate S and board|substrate alignment can be performed.

Then, as shown in FIG. 7 , the mask M is adsorbed to the electrostatic chuck 24 with the substrate S interposed therebetween. That is, the mask M is adsorbed to the lower surface of the substrate S adsorbed to the electrostatic chuck 24 by electrostatic attraction.

To this end, first, the electrostatic chuck 24 on which the substrate S is adsorbed is lowered toward the mask M by the electrostatic chuck Z actuator 28 . The electrostatic chuck 24 descends to a limit position at which the electrostatic attraction caused by the suction and hold potential difference (second potential difference, ΔV2) applied to the electrostatic chuck 24 does not act on the mask M (FIG. 7(a)).

In a state in which the electrostatic chuck 24 is lowered to the limit position, the magnetic force generating unit 33 descends from the retracted position h1 , and the magnetic force of the first magnet 33 - 1 of the magnetic force generating unit 33 is strong. It moves to the 1st magnetic force application position h2 applied to this mask M (FIG.7(b)). When the magnetic force generating unit 33 moves to the first magnetic force application position h2, the corresponding one end side of the mask M is pulled upward by the magnetic force by the first magnet 33-1 and is attracted. Thereby, the starting point of the adsorption|suction of the mask M to the electrostatic chuck 24 which is performed afterward is formed (suction step).

As described above, in a state where the one end side of the mask M is attracted by the magnetic force of the magnetic force generating unit 33 and the starting point of adsorption is set, the potential difference controller 32 controls the electrode unit (the first adsorption unit ( ) of the electrostatic chuck 24 ). 41) is controlled so that the third potential difference ΔV3 is applied (FIG. 7(c)).

The third potential difference ΔV3 is larger than the second potential difference ΔV2 , and it is preferable that the mask M is charged beyond the substrate S by electrostatic induction. As a result, the mask M is attracted to the electrostatic chuck 24 over the substrate S. In particular, since the mask M is closest to the electrostatic chuck 24 at the suction starting point of the mask M formed by the magnetic force generating unit 33 , this portion is first attracted to the electrostatic chuck 24 .

However, the present invention is not limited thereto, and the third potential difference ΔV3 may have the same magnitude as the second potential difference ΔV2. Even if the third potential difference ΔV3 has the same magnitude as the second potential difference ΔV2 , as described above, it is lowered to the limit position of the electrostatic chuck 24 and the mask M is lowered by the magnetic force generating unit 33 . Since the relative distance between the electrostatic chuck 24 or the substrate S and the mask M is narrowed by the suction, electrostatic induction may be induced in the mask M by the polarized charges electrostatically induced in the substrate, and the mask M may also be electrostatically induced. ) can be obtained with an adsorption force sufficient to adsorb the electrostatic chuck 24 over the substrate.

The third potential difference ΔV3 may be made smaller than the first potential difference ΔV1 or may be set to have a magnitude equal to that of the first potential difference ΔV1 in consideration of the shortening of the process time Tact.

After the mask M is sucked by the magnetic force generator 33 and a predetermined potential difference is applied to the electrode portion of the electrostatic chuck 24 by the potential difference controller 32, the electrostatic chuck ( 24) may be further lowered toward the mask M by the electrostatic chuck Z actuator 28. Thereby, the relative distance between the board|substrate S and the mask M can be shortened, and adsorption|suction of the mask M can be accelerated|stimulated. Also, at this time, the magnetic force generating unit 33 may be further lowered together with the electrostatic chuck 24 .

Next, the magnetic force generator 33 is sequentially lowered toward the electrostatic chuck 24 to the second magnetic force application position h3 and the third magnetic force application position h4 . As the magnetic force generating unit 33 descends sequentially to the second magnetic force application position h3 and the third magnetic force application position h4, the central portion of the mask M corresponding to the position of the second magnet 33-2 and The other end of the mask M corresponding to the position of the third magnet 33-3 is sequentially pulled toward the electrostatic chuck 24 (suction) (FIGS. 7(d) and (e)).

In accordance with the downward movement of the magnetic force generating unit 33 , the potential difference control unit 32 applies the third potential difference ΔV3 to the second suction unit 42 and the second suction unit 42 corresponding to the mask M suction position of the electrostatic chuck 24 . 3 sequentially applied to the adsorption unit 43 .

That is, when the magnetic force generating unit 33 moves to the second magnetic force application position h3 , the second adsorption unit of the electrostatic chuck 24 corresponds to the position of the second magnet 33 - 2 of the magnetic force generating unit 33 . When a third potential difference is applied to (42) (FIG. 7(d)) and the magnetic force generating unit 33 descends to the third magnetic force applying position h4, the third magnet 33-3 of the magnetic force generating unit 33 is ) is controlled so that a third potential difference is applied to the third adsorption part 43 of the electrostatic chuck 24 corresponding to the position of the electrostatic chuck 24 (FIG. 7(e)).

As a result, the mask M is adsorbed to the electrostatic chuck 24 at the center of the mask M from the side corresponding to the first adsorption portion 41 of the mask M serving as the starting point of the mask M adsorption. and proceeds toward the third adsorption unit 43 side (that is, adsorption of the mask M proceeds in the X direction), and the mask M is flat without wrinkles occurring in the center of the mask M It may be adsorbed to the electrostatic chuck 24 (second adsorption step).

However, the present invention is not limited to the embodiment shown in FIG. 7 , and for example, the third potential difference ΔV3 may be simultaneously applied to the entire electrostatic chuck 24 . That is, since the mask suction starting point has already been formed by the magnetic force generating unit 33 , even if a third potential difference is simultaneously applied to the entire electrostatic chuck 24 , the mask suction starting point closest to the electrostatic chuck 24 is first suctioned. Then, as the magnetic force generating unit 33 sequentially descends toward the electrostatic chuck 24 , the mask portion at the corresponding position is sequentially sucked by the magnetic force generating unit, so that the suction of the mask is performed on the first side. proceeds sequentially, and no wrinkles remain on the adsorbed mask (M).

In this way, after the entire mask M is attracted by the electrostatic attraction of the electrostatic chuck 24 with the substrate S interposed therebetween, the magnetic force generating unit 33 is raised to the retracted position h1 to raise the magnetic force generating unit ( 33) reduces the magnetic force acting on the mask M (Fig. 7(f)). Even if the magnetic force acting on the mask M is lowered by raising the magnetic force generating unit 33 to the retracted position h1 , the mask M can stably maintain an adsorption state by the electrostatic attraction of the electrostatic chuck 24 . have.

However, the present invention is not limited thereto, and the magnetic force generating unit 33 may be raised to the retracted position at any time after the starting point of the suction of the mask M is suctioned by the electrostatic attraction of the electrostatic chuck 24 . In addition, even after the entire mask M is attracted by the electrostatic attraction of the electrostatic chuck 24 with the substrate S interposed therebetween, the magnetic force generating unit 33 is not moved to the retracted position and is placed at the magnetic force application position. may be left

According to the above-described embodiment of the present invention, in the mask adsorption process of adsorbing the mask M to the electrostatic chuck 24 over the substrate S, the magnetic force generating unit 33 composed of a plurality of magnets having different magnetic forces. A part of the mask M is sucked by the to form a starting point of mask adsorption, and the magnetic force generating unit 33 is sequentially moved to the magnetic force application position of each of the plurality of magnets to sequentially move the suction position of the mask while moving the electrostatic chuck By applying the mask adsorption potential difference to (24), the mask is sequentially sucked by the electrostatic chuck from the set adsorption starting point. Accordingly, the mask M can be adsorbed to the electrostatic chuck 24 over the substrate S so that no wrinkles remain.

<Film-forming process>

Hereinafter, a film-forming method employing the adsorption method according to the present embodiment will be described.

In a state where the mask M is placed on the mask holding unit 23 in the vacuum container 21 , the substrate is moved into the vacuum container 21 of the film forming apparatus 11 by the transfer robot 14 of the transfer chamber 13 . are brought in

The hand of the transfer robot 14 that has entered the vacuum container 21 places the substrate S on the support portion of the substrate support unit 22 .

Subsequently, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or comes into contact with the substrate S, a first potential difference ΔV1 is applied to the electrostatic chuck 24 to adsorb the substrate S. .

After the substrate is adsorbed to the electrostatic chuck 24 , the potential difference applied to the electrostatic chuck 24 is reduced from the first potential difference ΔV1 to the second potential difference ΔV2 . Even if the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV2 , the state of adsorption to the substrate by the electrostatic chuck 24 may be maintained in a subsequent process.

In a state where the substrate S is adsorbed to the electrostatic chuck 24 , the substrate S is lowered toward the mask M in order to measure the relative positional shift of the substrate S with respect to the mask M . In another embodiment of the present invention, in order to reliably prevent the substrate from falling off from the electrostatic chuck 24 during the lowering process of the substrate adsorbed to the electrostatic chuck 24, after the lowering process of the substrate is completed (that is, to be described later) Immediately before the alignment process is started), the potential difference applied to the electrostatic chuck 24 may be lowered to the second potential difference ΔV2 .

When the board|substrate S falls to a measurement position, the alignment mark formed in the board|substrate S and the mask M is image|photographed with the camera 20 for alignment, and the relative position shift of a board|substrate and a mask is measured. In another embodiment of the present invention, the potential difference applied to the electrostatic chuck 24 is applied to the electrostatic chuck 24 after the measurement process for alignment is completed (during the alignment process) in order to further increase the precision of the measurement process of the relative positions of the substrate and the mask. It may be lowered by a potential difference.

As a result of the measurement, if it is determined that the relative positional deviation of the substrate with respect to the mask exceeds the threshold, the substrate S in the state of being adsorbed to the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) to position the substrate with respect to the mask. Adjust (align). In another embodiment of the present invention, after the position adjustment process is completed, the potential difference applied to the electrostatic chuck 24 may be lowered to the second potential difference ΔV2 . Through this, it is possible to further increase the precision throughout the alignment process (relative position measurement and position adjustment).

After the alignment process, the electrostatic chuck 24 is lowered toward the mask M to move it to the limit position. At the limit position, the second potential difference applied to the electrostatic chuck 24 does not charge the mask M, so that the electrostatic attraction does not substantially act on the mask M.

In this state, the magnetic force generating unit 33 is lowered to sequentially move to the magnetic force applying position of each of the plurality of magnets. When the magnetic force generating unit 33 descends to the first magnetic force application position where the magnetic force by the strongest magnet among the plurality of magnets (first magnet; 33-1) acts on the mask M, it corresponds to the corresponding position. One end of the mask M to be used is pulled upward by magnetic force and is attracted to the electrostatic chuck 24 . Thereby, the starting point of mask adsorption|suction is formed.

In this state, the magnetic force generating unit 33 is sequentially moved to the magnetic force application position of each of the plurality of magnets to sequentially move the mask suction position, while sequentially moving the entire electrostatic chuck or from the suction unit corresponding to the mask suction starting point. A third potential difference ΔV3 is applied to adsorb the portion of the mask M over the substrate S. The mask M is adsorbed sequentially from the above-described adsorption starting point, and the mask M is adsorbed to the electrostatic chuck 24 without leaving wrinkles. As described above, after the starting point of mask adsorption is formed, the electrostatic chuck 24 on which the substrate S is adsorbed may be further lowered toward the mask M by the electrostatic chuck Z actuator 28 .

After the entire mask M is absorbed by the application of the third potential difference, the magnetic force generating unit 33 is raised from the magnetic force application position and moved to the retracted position.

Thereafter, the potential difference applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 is lowered to a fourth potential difference ΔV4 , which is a potential difference capable of maintaining a state in which the substrate and the mask are adsorbed to the electrostatic chuck 24 . Accordingly, it is possible to shorten the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after the film formation process is completed.

Then, the shutter of the deposition source 25 is opened and the deposition material is deposited on the substrate S through the mask.

After depositing to a desired thickness, the mask M is separated by lowering the potential difference applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 to a fifth potential difference ΔV5, and only the substrate is adsorbed to the electrostatic chuck 24 . In this state, the substrate is raised by the electrostatic chuck Z actuator 28 .

Then, the hand of the transport robot 14 enters the vacuum container 21 of the film forming apparatus 11 , and a potential difference of zero (0) or reverse polarity is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24, thereby causing electrostatic discharge. The chuck 24 is lifted off the substrate. Thereafter, the deposition-completed substrate is unloaded from the vacuum container 21 by the transfer robot 14 .

In addition, in the above description, although the film-forming apparatus 11 was made into the structure of the so-called upward vapor deposition method (depo-up) in which film formation is performed with the film-forming surface of the board|substrate S facing downward in a vertical direction, it is not limited to this. , the substrate S may be disposed in a state upright to the side of the vacuum vessel 21, and the film formation may be performed in a state in which the film formation surface of the substrate S is parallel to the direction of gravity.

<Method for manufacturing electronic device>

Next, an example of the manufacturing method of the electronic device using the film-forming apparatus of this embodiment is demonstrated. Hereinafter, the structure and manufacturing method of an organic electroluminescent display are illustrated as an example of an electronic device.

First, an organic EL display device to be manufactured will be described. Fig. 8(a) is an overall view of the organic EL display device 60, and Fig. 8(b) shows a cross-sectional structure of one pixel.

As shown in FIG. 8A , in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix form. Although details will be described later, each of the light emitting devices has a structure including an organic layer sandwiched between a pair of electrodes. In addition, a pixel here refers to the minimum unit which enables the display of a desired color in the display area 61. As shown in FIG. In the case of the organic EL display device according to the present embodiment, the pixel 62 is constituted by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. has been The pixel 62 is often composed of a combination of a red light emitting device, a green light emitting device, and a blue light emitting device, but may be a combination of a yellow light emitting device, a cyan light emitting device, and a white light emitting device. not.

Fig. 8(b) is a schematic partial cross-sectional view taken along line AB of Fig. 8(a). The pixel 62 has an organic EL element having an anode 64 , a hole transport layer 65 , light emitting layers 66R, 66G, and 66B, an electron transport layer 67 , and a cathode 68 on a substrate 63 . . Among them, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. In this embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green color, and the light emitting layer 66B is an organic EL layer emitting blue color. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue, respectively. In addition, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In addition, in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anodes 64 . In addition, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

Although the hole transport layer 65 and the electron transport layer 67 are shown as one layer in FIG. 8(b), depending on the structure of the organic EL display device, it may be formed of a plurality of layers including the hole blocking layer or the electron blocking layer. may be In addition, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65 . . Similarly, an electron injection layer may also be formed between the cathode 68 and the electron transport layer 67 .

Next, an example of the manufacturing method of an organic electroluminescent display apparatus is demonstrated concretely.

First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

An insulating layer 69 is formed by forming an acrylic resin by spin coating on the substrate 63 on which the anode 64 is formed, and patterning the acrylic resin to form an opening in the portion where the anode 64 is formed by lithography. This opening corresponds to the light emitting region in which the light emitting element actually emits light.

The substrate 63 patterned with the insulating layer 69 is loaded into the first organic material film forming apparatus, the substrate is held by an electrostatic chuck, and a hole transport layer 65 is formed as a common layer over the anode 64 of the display area. . The hole transport layer 65 is formed by vacuum deposition. In reality, since the hole transport layer 65 is formed to have a size larger than that of the display area 61, a high-precision mask is not required.

Next, the substrate 63 formed up to the hole transport layer 65 is loaded into the second organic material film forming apparatus, and is held by an electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and the red light emitting layer 66R is formed on the portion of the substrate 63 where the red light emitting element is placed.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G emitting green light is formed by the third organic material film forming apparatus, and further, the light emitting layer 66B which emits blue light is formed by the fourth organic material film forming apparatus. After the formation of the light emitting layers 66R, 66G, and 66B is completed, an electron transporting layer 67 is formed over the entire display area 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, and 66B of the three colors.

A cathode 68 is formed by moving the substrate formed up to the electron transport layer 67 to a metallic vapor deposition material film forming apparatus.

According to the present invention, the substrate and the mask are adsorbed and held by the electrostatic chuck 24 , but when the mask is adsorbed, an adsorption starting point is formed by the magnetic force generating unit 33 , and driving control of the magnetic force generating unit 33 is controlled. By actively inducing and controlling the direction of adsorption through the air, the mask is adsorbed to the electrostatic chuck 24 without wrinkles.

After that, it is transferred to a plasma CVD apparatus to form a protective layer 70 , thereby completing the organic EL display apparatus 60 .

From the time the substrate 63 on which the insulating layer 69 is patterned is brought into the film forming apparatus until the film formation of the protective layer 70 is completed, when exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is It may be deteriorated by moisture or oxygen. Therefore, in this example, carrying in and carrying out of the board|substrate between film-forming apparatuses are performed in a vacuum atmosphere or inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

24: electrostatic chuck
30: electrostatic chuck system
31: potential difference applying unit
32: potential difference control unit
33: magnetic force generating unit
33-1: first magnet
33-2: second magnet
33-3: third magnet

Claims (27)

An electrostatic chuck system for adsorbing an adsorbent, comprising:
an electrostatic chuck comprising an adsorption surface for adsorbing the adsorbed body and an electrode part, the electrostatic chuck adsorbing the adsorbed body by a potential difference applied to the electrode part;
an adsorption auxiliary means for setting an adsorption starting point and guiding a direction of adsorption when the adsorbed body is adsorbed by the electrostatic chuck;
and a potential difference applying unit for applying a potential difference for adsorbing the adsorbed body to the electrostatic chuck to the electrode after the suction start point is set by the suction auxiliary means. According to claim 1,
The adsorption auxiliary means,
a magnetic force generating unit disposed on the opposite side of the adsorption surface of the electrostatic chuck, the magnetic force generating unit having a plurality of magnets having different magnitudes of magnetic force;
and a magnetic force generating unit driving means configured to move the magnetic force generating unit relative to the electrostatic chuck to change a distance between the magnetic force generating unit and the electrostatic chuck. 3. The method of claim 2,
The electrostatic chuck system, characterized in that the plurality of magnets are arranged side by side along a surface parallel to the suction surface of the electrostatic chuck. 4. The method of claim 3,
When the adsorbed body is adsorbed by the electrostatic chuck, the magnetic force generating unit is moved by the magnetic force generating unit driving means, and at least a part of the adsorbed body is moved by the magnetic force generated by the magnets of at least some of the plurality of magnets. The electrostatic chuck system according to claim 1, wherein the suction origin is set by drawing the . 4. The method of claim 3,
The electrostatic chuck system, characterized in that the magnetic force generating unit is movable between a magnetic force application position capable of applying a magnetic force to the adsorbed body and a retracted position in which magnetic force is not substantially applied to the adsorbed body. 6. The method of claim 5,
The magnetic force application position is,
When the magnetic force generating unit approaches the electrostatic chuck from the retracted position, the magnetic force generated by the first magnet having the largest magnetic force among the plurality of magnets is first applied to a portion of the adsorbed body 1 the position of applying the magnetic force;
A position where the magnetic force generating unit is closer to the electrostatic chuck than the first magnetic force application position, and according to the order of the magnetic force magnitude, the magnetic force by each of the other magnets among the plurality of magnets is applied to other parts of the adsorbed body, respectively. An electrostatic chuck system comprising other magnetic force application positions to be sequentially applied. 7. The method of claim 6,
When the adsorbed body is adsorbed by the electrostatic chuck, an adsorption starting point is set by pulling the part of the adsorbed body toward the electrostatic chuck by the magnetic force of the first magnet at the first magnetic force application position. electrostatic chuck system. 8. The method of claim 7,
The magnetic force generating unit sequentially moves the other portion of the adsorbed body toward the electrostatic chuck by the magnetic force of each of the other magnets at the other magnetic force application positions following the setting of the adsorption starting point at the first magnetic force application position. An electrostatic chuck system, characterized in that it induces the adsorption progress direction by attracting it. A film forming apparatus for forming a film on a substrate through a mask, comprising:
An electrostatic chuck system for adsorbing a substrate as a first adsorbent and a mask as a second adsorbent,
The electrostatic chuck system is an electrostatic chuck system according to any one of claims 1 to 8, characterized in that it is a film forming apparatus. 10. The method of claim 9,
The electrostatic chuck system,
After the substrate is adsorbed to the electrostatic chuck, when the mask is adsorbed over the adsorbed substrate, an adsorption starting point of the mask is set by the adsorption auxiliary means, and the adsorption proceeding direction guided by the adsorption auxiliary means adsorption of the mask by the electrostatic chuck according to A method for adsorbing an adsorbent, comprising:
a first adsorption step of applying a first potential difference to an electrode portion of the electrostatic chuck to adsorb a first adsorbent to an adsorption surface of the electrostatic chuck adsorbing the adsorbent;
A second potential difference, which is the same as or different from the first potential difference, for adsorbing a second adsorbed body to the electrostatic chuck is applied to the electrode portion, and the second adsorbed body is interposed between the first adsorbed body and the electrostatic chuck. A second adsorption step of adsorbing
The second adsorption step is
At least a portion of the second adsorbed body is applied to the first adsorbed body by a magnetic force from a magnetic force generating unit having a plurality of magnets having different magnitudes of magnetic force disposed on the opposite side of the adsorption surface of the electrostatic chuck to set an adsorption starting point. a lateral suction step, and
an adsorption step of adsorbing the second adsorbed body by applying the second potential difference to the electrode unit while bringing the second adsorbed body drawn in the suction step into contact with the first adsorbed body after the adsorption starting point is set Adsorption method comprising a. 12. The method of claim 11,
The said magnetic force generating part is an adsorption|suction method, characterized in that the said plurality of magnets are arranged side by side in a plane parallel to the said adsorption|suction surface. 13. The method of claim 12,
In the suction step, by attracting at least a part of the second adsorbed body toward the first adsorbed body by magnetic force generated by at least some of the magnets among the plurality of magnets, setting the starting point of adsorption in the adsorption step adsorption method comprising. 14. The method of claim 13,
In the second adsorption step, the second adsorbed body is adsorbed to the electrostatic chuck with the first adsorbed body interposed therebetween by the electrostatic attraction of the electrostatic chuck. 12. The method of claim 11,
and the magnetic force generating unit is movable between a magnetic force application position capable of applying a magnetic force to the second adsorbed body and a retracted position in which a magnetic force is not substantially applied to the second adsorbed body. 16. The method of claim 15,
The magnetic force application position is,
When the magnetic force generating unit approaches the electrostatic chuck from the retracted position, the magnetic force generated by the first magnet having the largest magnetic force among the plurality of magnets is first applied to a portion of the second adsorbed body and a first magnetic force application position to be
A position where the magnetic force generating unit is closer to the electrostatic chuck than the first magnetic force application position, and according to the order of the magnetic force magnitude, the magnetic force by each of the other magnets among the plurality of magnets is a different part of the second adsorbed body. Adsorption method, characterized in that it includes other magnetic force application positions to be sequentially applied to each. 17. The method of claim 16,
The suction step may include moving the magnetic force generating unit to the first magnetic force application position and pulling the portion of the second adsorbed body toward the first adsorbed body side by the magnetic force of the first magnet in the adsorption step. An adsorption method comprising establishing an adsorption origin. 18. The method of claim 17,
The suction step may include moving the magnetic force generating unit to the other magnetic force application positions and sequentially pulling the other portions of the second adsorbed body toward the first adsorbed body by the respective magnetic forces of the other magnets. The adsorption method further comprising inducing the adsorption progress direction in the adsorption step. 12. The method of claim 11,
In the second adsorption step, the second adsorption target is adsorbed to the electrostatic chuck with the first adsorbent interposed therebetween by the electrostatic force of the electrostatic chuck. 20. The method of claim 19,
In the suction step, by attracting at least a part of the second adsorbed body toward the first adsorbed body by a magnetic force generated by at least some of the magnets among the plurality of magnets, an adsorption starting point in the adsorption step is set. adsorption method comprising A film forming method of forming a deposition material on a substrate through a mask, comprising:
loading the mask into the vacuum container;
loading a substrate into the vacuum container;
a first adsorption step of adsorbing the substrate to an adsorption surface of the electrostatic chuck by applying a first potential difference to an electrode portion of the electrostatic chuck;
a second adsorption step of adsorbing the mask to the electrostatic chuck with the substrate interposed therebetween by applying a second potential difference equal to or different from the first potential difference to the electrode unit for adsorbing the mask to the electrostatic chuck; ,
and depositing a deposition material on the substrate through the mask by evaporating the deposition material while the substrate and the mask are adsorbed to the electrostatic chuck;
The second adsorption step is
A suction step of pulling at least a portion of the mask toward the substrate to set an adsorption starting point by a magnetic force from a magnetic force generating unit having a plurality of magnets having different magnitudes of magnetic force disposed on the opposite side of the adsorption surface;
and an adsorption step of adsorbing the mask by applying the second potential difference to the electrode part while contacting the mask drawn in the suction step to the substrate after the adsorption starting point is set . 22. The method of claim 21,
The said magnetic force generating part is a film forming method characterized by the said plurality of magnets being arrange|positioned side by side in a plane parallel to the said adsorption|suction surface. 23. The method of claim 22,
The magnetic force generating unit is movable between a magnetic force application position capable of applying a magnetic force to the mask and a retracted position in which a magnetic force is not substantially applied to the mask. 24. The method of claim 23,
The magnetic force application position is,
When the magnetic force generator approaches the electrostatic chuck from the retracted position, the magnetic force generated by the first magnet having the largest magnetic force among the plurality of magnets is first applied to a portion of the mask. the position of the magnetic force, and
A position in which the magnetic force generating unit is closer to the electrostatic chuck than the first magnetic force application position, and according to the order of the magnetic force magnitude, the magnetic force by each of the other magnets among the plurality of magnets is sequentially applied to different parts of the mask. and other magnetic force application positions to be applied to the film forming method. 25. The method of claim 24,
The suction step is
and setting an adsorption starting point in the adsorption step by moving the magnetic force generating unit to the first magnetic force application position and drawing the part of the mask toward the substrate side by the magnetic force of the first magnet. 26. The method of claim 25,
In the suction step, the adsorption proceeds in the adsorption step by moving the magnetic force generating unit to the other magnetic force application positions and sequentially pulling the other parts of the mask toward the substrate side by the respective magnetic forces of the other magnets. The method further comprising inducing direction. 27. A method of manufacturing an electronic device, characterized in that the electronic device is manufactured using the film forming method according to any one of claims 21 to 26.

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