KR102411792B1 - Plasma etching device parts for semiconductor manufacturing including composite sintered body and manufacturing method thereof - Google Patents

Abstract

30 vol% to 70 vol% of yttria (Y ₂ O ₃ ); And 30 vol% to 70 vol% of magnesia (MgO); includes a composite sintered body, and provides a plasma etching device component for semiconductor manufacturing, characterized in that it has plasma resistance.
Plasma etching apparatus components for semiconductor manufacturing provided in one aspect of the present invention have excellent plasma corrosion resistance, even when the composite sintered body is sintered at a relatively low relative density, it can have good plasma corrosion resistance. In addition, since the size of the crystal grains of the composite sintered body is small and the increase in surface roughness after etching is also small, there is an effect that contaminant particles can be reduced. Furthermore, it is superior in strength and low cost compared to the existing plasma-resistant materials, and is excellent in economic feasibility and usability.

Description

Plasma etching device parts for semiconductor manufacturing including composite sintered body and manufacturing method thereof

It relates to a plasma etching device component for manufacturing a semiconductor including a composite sintered body and a manufacturing method thereof.

Electronic components such as semiconductor devices and liquid crystal displays are made by repeating processes such as lamination, patterning, etching, and cleaning of various metal and non-metal materials. Among them, the etching process is one of the most frequently performed processes as a process for forming a material to be etched into a desired shape. This etching process is performed by various equipment and methods, and to be broadly divided, it can be divided into isotropic etching and anisotropic etching. The isotropic etching is a method in which etching is performed along a specific direction, and chemical etching such as wet etching or barrel plasma etching generally belongs to this method.

Examples of the anisotropic etching include most dry etching methods such as reactive ion etching. In reactive ion etching, the reaction gas is ionized in the process chamber and electrically accelerated, so that the etching is performed mainly along the electric field direction. In most of these dry etching methods, plasma is formed in order to activate the reaction gas. In order to form the plasma, a method of applying a high frequency (RF) electric field to the reaction gas is mainly used. However, in recent years, as electronic components become increasingly finer, RF power continues to increase, so that corrosion resistance of components for process equipment to plasma becomes important. For example, in the past, RF power of about 1,000W was generally used, but recently power of about 2,500W is also required.

Here, a plurality of core parts (ceramic parts) are configured inside the plasma etching apparatus, and corrosion resistance, chemical resistance and mechanical properties are essential from the plasma atmosphere where these parts are formed at a temperature of 150 to 200 °C.

Conventionally, alumina (Al ₂ O ₃ ) has been mainly used as a member used in the plasma etching apparatus for manufacturing semiconductors, but this has poor corrosion resistance to plasma, and thus becomes unsuitable as a member in an environment in which RF power is increased. In order to overcome this, a layer of yttria (Y ₂ O ₃ ) was applied and applied to alumina, but yttria has a flexural strength of about 160 MPa, which is significantly smaller than about 430 MPa of alumina, so the thermal stability is low and cracking, etc. damage occurred easily. Here, components of the plasma etching apparatus for semiconductor manufacturing include a nozzle, an injector, a ring, and the like.

For example, in Korean Patent Registration No. 10-0851833, in a quartz glass part including quartz glass and a ceramic thermal sprayed film formed on the surface of the quartz glass, the ceramic thermal sprayed film has a surface roughness Ra of 5 to 20 μm and a surface roughness Ra of 70 to 70 to A quartz glass part having a relative density of 97% is disclosed.

In addition, Korean Patent Registration No. 10-0917292 discloses a ceramic product that resists corrosion by halogen-containing-plasma used in semiconductor processing, wherein the ceramic product includes a ceramic having at least two phases, and about 50 mole% yttrium oxide in a molar concentration range from about 75 mole % to about 75 mole %; zirconium oxide in a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, wherein the at least one The concentration range of the other components of the ceramic article is from about 10 mole % to about 30 mole %.

However, as described above, these conventional techniques have problems in that corrosion resistance to plasma is weak, thermal stability is low, and damage such as cracking can easily occur.

Therefore, since the plurality of parts (ceramic parts) have consumability and must be replaced due to other factors such as corrosion after use for a certain period of time, there is a need for parts with improved mechanical properties and improved plasma resistance. In addition, in recent years, the reduction of contaminant particles is strongly required to improve the production yield while the competition for line width miniaturization of semiconductors is intensifying. That is, the technology for lowering the etch rate, which has been pursued in the past, is a necessary condition, and it is important to develop a material that also satisfies the sufficient condition to reduce the generation of contaminants by controlling the microstructure or composition.

Republic of Korea Patent Registration No. 10-0851833 Republic of Korea Patent Registration No. 10-0917292

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma etching apparatus component for semiconductor manufacturing that includes a composite sintered body including yttria and magnesia, and has excellent corrosion resistance to plasma.

In order to achieve the above object, in one aspect of the present invention

30 vol% to 70 vol% of yttria (Y ₂ O ₃ ); and

30 vol% to 70 vol% of magnesia (MgO);

Including a composite sintered body comprising a,

There is provided a plasma etching apparatus component for semiconductor manufacturing, characterized in that having a plasma resistance.

In addition, in another aspect of the present invention

Mixing 30 vol% to 70 vol% of yttria (Y ₂ O ₃ ) and 30 vol% to 70 vol% of magnesia (MgO); and

Sintering the mixed yttria (Y ₂ O ₃ ) and magnesia (MgO);

There is provided a method of manufacturing a plasma etching device component for semiconductor manufacturing comprising a.

Furthermore, in another aspect of the present invention

A plasma etching apparatus for semiconductor manufacturing including the plasma etching apparatus component is provided.

Plasma etching apparatus components for semiconductor manufacturing provided in one aspect of the present invention have excellent plasma corrosion resistance, even when the composite sintered body is sintered at a relatively low relative density, it can have good plasma corrosion resistance.

In addition, since the size of the crystal grains of the composite sintered body included in the plasma etching apparatus for semiconductor manufacturing is small and the increase in surface roughness after etching is also small, there is an effect that contaminant particles can be reduced.

Furthermore, it is superior in strength and low cost compared to the existing plasma-resistant materials, and is excellent in economic feasibility and usability.

1 is a graph measuring the amount of weight loss by etching using plasma according to an experimental example of the present invention;
2 is a schematic diagram of a method for manufacturing a composite sintered body according to an embodiment of the present invention;
3 is a graph measuring the etching depth by etching using plasma according to an experimental example of the present invention;
4a to 4c show SEM images for Examples and Comparative Examples of the present invention,
5A to 5D are AFM images showing surface roughness after etching using plasma according to an experimental example of the present invention.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

In one aspect of the invention

30 vol% to 70 vol% of yttria (Y ₂ O ₃ ); and

30 vol% to 70 vol% of magnesia (MgO);

Including a composite sintered body comprising a,

There is provided a plasma etching apparatus component for semiconductor manufacturing, characterized in that having a plasma resistance.

Hereinafter, a plasma etching apparatus component for semiconductor manufacturing provided in one aspect of the present invention will be described in detail.

First, the plasma etching apparatus component provided in one aspect of the present invention includes a composite sintered body including yttria (Y ₂ O ₃ ) and magnesia (MgO).

The yttria and magnesia may be mixed in a powder form.

The yttria preferably has a purity of 99% or more.

In addition, the particle size of the yttria may be 10 nm to 1000 nm. Preferably it may be 20 nm to 500 nm, and more preferably 30 nm to 300 nm. When the particle size of the yttria is less than 10 nm, there is a problem in that mixing and molding are difficult, and when it exceeds 1000 nm, there is a problem in that strength and sinterability are reduced.

The magnesia preferably has a purity of 99% or more.

In addition, the particle size of the magnesia may be 10 nm to 1000 nm. Preferably it may be 20 nm to 500 nm, and more preferably 30 nm to 300 nm. When the particle size of the magnesia is less than 10 nm, there is a problem in that mixing and molding are difficult, and when it exceeds 1000 nm, there is a problem in that strength and sinterability are reduced.

The composite sintered body may include 20 vol% to 80 vol% of yttria and 20 vol% to 80 vol% of magnesia. 30 vol% to 70 vol% yttria and 30 vol% to 70 vol% magnesia, and 40 vol% to 60 vol% yttria and 40 vol% to 60 vol% magnesia; , 25 vol% to 45 vol% yttria and 55 vol% to 75 vol% magnesia, and may comprise 55 vol% to 75 vol% yttria and 25 vol% to 45 vol% magnesia and , 20 vol% to 35 vol% yttria and 65 vol% to 80 vol% magnesia, and may include 65 vol% to 80 vol% yttria and 20 vol% to 35 vol% magnesia. .

When the composite sintered body contains less than 20 vol% of yttria, sintering may be difficult, there are problems that particles are easily formed by plasma irradiation, and the strength may be relatively weak, and in the composite sintered body, 20 vol% If it contains less than magnesia, there is a problem that the plasma resistance may be relatively low.

The yttria and magnesia may be mixed by milling, but the mixing method is not limited thereto, and may be mixed by any method commonly used in the art.

The composite sintered body may have a relative density of 90% or more, preferably 92% or more, more preferably 95% or more, and still more preferably 98% or more.

The composite sintered body has good plasma resistance even with a relative density of less than 100%.

The composite sintered body may have a surface roughness (R _a ) of 2 nm or less.

When the composite sintered body is exposed to CF ₄ / 0 ₂ plasma of 500 W output and 100 W bias for 3 hours, the surface roughness (R _a ) may increase by 5 times or less, preferably 4 times or less, More preferably, it may increase by 3.5 times or less, more preferably by 3 times or less, and most preferably by 1.5 times or less.

Even if the composite sintered body is exposed to plasma, the increase in surface roughness is not large compared to conventional plasma-resistant materials, and since it has a relatively low surface roughness even after plasma exposure, particles generated by etching can easily escape out of the chamber As a result, it is possible to reduce contaminant particles.

When the composite sintered body is exposed to CF ₄ / 0 ₂ plasma of 500 W output and 100 W bias for 3 hours, the etching depth may be 200 nm or less, preferably 180 nm or less, more preferably 150 nm or less can

The grain size of the composite sintered body may be 100 nm to 1 μm, preferably 100 nm to 500 nm, and most preferably 150 nm to 350 nm.

Here, the grain size of the composite sintered body means the average grain size of the grains.

The grain size of the composite sintered body is very small compared to conventional plasma-resistant materials, and as a result, the size of the particles generated by etching after plasma exposure is relatively small, so the generated particles can easily escape out of the chamber. Therefore, it is possible to reduce contaminant particles.

The composite sintered body may further include a sintering additive. The sintering additive may be, for example, ZrO ₂ , ThO ₂ or La ₂ O ₃ , but is not limited thereto and may be a general additive generally used in the art.

The composite sintered body may contain 8 mol% or less of the sintering additive, preferably 0.1 mol% to 4 mol%, more preferably 0.5 mol% to 3 mol% of the sintering additive.

The composite sintered body may have a biaxial strength of 100 MPa or more, preferably a biaxial strength of 200 MPa or more, more preferably a biaxial strength of 300 MPa or more, and most preferably a biaxial strength of 350 MPa or more. can have

The plasma etching apparatus component for manufacturing a semiconductor may be formed of a bulk material of the composite sintered body.

In addition, the component of the plasma etching apparatus for manufacturing a semiconductor may be formed by coating the composite sintered body on another material. The other material may be, for example, metal, ceramic, polymer, etc., but is not limited to a specific material.

The plasma etching apparatus component for semiconductor manufacturing provided in one aspect of the present invention may be, for example, a nozzle, an injector, a ring, but is not limited thereto, and plasma-resistant in the plasma etching apparatus for manufacturing a semiconductor It can be any part that requires sex.

In another aspect of the invention

Mixing 30 vol% to 70 vol% of yttria (Y ₂ O ₃ ) and 30 vol% to 70 vol% of magnesia (MgO); and

Sintering the mixed yttria (Y ₂ O ₃ ) and magnesia (MgO);

There is provided a method of manufacturing a plasma etching device component for semiconductor manufacturing comprising a.

Hereinafter, a method for manufacturing a plasma etching apparatus component for semiconductor manufacturing provided in another aspect of the present invention will be described in detail for each step.

First, the plasma etching apparatus component manufacturing method provided in another aspect of the present invention includes mixing yttria (Y ₂ O ₃ ) and magnesia (MgO).

The yttria and magnesia may be mixed in a powder form.

The yttria powder preferably has a purity of 99% or more.

In addition, the particle size of the yttria may be 10 nm to 1000 nm. Preferably it may be 20 nm to 500 nm, and more preferably 30 nm to 300 nm. When the particle size of the yttria is less than 10 nm, there is a problem in that mixing and molding are difficult, and when it exceeds 1000 nm, there is a problem in that strength and sinterability are reduced.

The magnesia preferably has a purity of 99% or more.

In addition, the particle size of the magnesia may be 10 nm to 1000 nm. Preferably it may be 20 nm to 500 nm, and more preferably 30 nm to 300 nm. When the particle size of the magnesia is less than 10 nm, there is a problem in that mixing and molding are difficult, and when it exceeds 1000 nm, there is a problem in that strength and sinterability are reduced.

The step may further include calcining the yttria and the magnesia. Through the calcination step, it is possible to obtain nanoparticles in a uniform shape without agglomeration. After the calcination step, the particle size may be increased by local sintering between nanoparticles.

The calcination step may be performed at a temperature of 1000 °C to 1500 °C.

In the mixing step, 20 vol% to 80 vol% of yttria and 20 vol% to 80 vol% of magnesia may be mixed. 30 vol% to 70 vol% yttria and 30 vol% to 70 vol% magnesia may be mixed, and 40 vol% to 60 vol% yttria and 40 vol% to 60 vol% magnesia may be mixed; , 25 vol% to 45 vol% yttria and 55 vol% to 75 vol% magnesia may be mixed, and 55 vol% to 75 vol% yttria and 25 vol% to 45 vol% magnesia may be mixed; , 20 vol% to 35 vol% yttria and 65 vol% to 80 vol% magnesia can be mixed, and 65 vol% to 80 vol% yttria and 20 vol% to 35 vol% magnesia can be mixed .

In the case of mixing less than 20 vol% of yttria in the mixing step, sintering may be difficult, there is a problem that particles are easy to form by plasma irradiation, and the strength may be relatively weak, and magnesia of less than 20 vol% If included, there is a problem that plasma resistance may be relatively low.

The mixing step may be performed by mixing the yttria and magnesia by milling, but the mixing method is not limited thereto, and may be mixed by any method commonly used in the art.

Next, the plasma etching apparatus component manufacturing method provided in another aspect of the present invention includes the step of sintering the mixed yttria (Y ₂ O ₃ ) and magnesia (MgO).

The sintering may be performed by hot pressing sintering (HP) or hot isostatic pressing (HIP), but is not limited thereto.

The step may be performed at a temperature of 1000°C to 1500°C, and a pressure of 10 MPa to 70 MPa. Specifically, it may be carried out at a temperature of 1100 °C to 1400 °C.

When sintering at less than 1000°C, there is a problem that sintering may not be sufficient, and when sintering at a temperature exceeding 1500°C, unnecessary excessive energy is consumed, excessive grain growth is made, and strength may be lowered. There is this.

In the above step, it may be sintered by further including a sintering additive. The sintering additive may be, for example, ZrO ₂ , ThO ₂ or La ₂ O ₃ , but is not limited thereto and may be a general additive generally used in the art.

In the above step, 8 mol% or less of the sintering additive may be included, preferably 0.1 mol% to 4 mol%, more preferably 0.5 mol% to 3 mol% of the sintering additive may be included.

The sintered composite sintered body may have a relative density of 90% or more, preferably 92% or more, more preferably 95% or more, even more preferably 98% or more.

Although the sintered composite sintered body has a relative density of less than 100%, it has improved plasma resistance compared to conventional plasma-resistant ceramics.

That is, even if a composite sintered body having a relatively low relative density is obtained by performing sintering at a relatively low temperature as described above, it is possible to obtain a composite sintered body having sufficiently excellent plasma resistance, thereby obtaining an advantage in the bar process.

The composite sintered body may have a surface roughness (R _a ) of 2 nm or less.

When the composite sintered body is exposed to CF ₄ / 0 ₂ plasma of 500 W output and 100 W bias for 3 hours, the surface roughness (R _a ) may increase by 5 times or less, preferably 4 times or less, More preferably, it may increase by 3.5 times or less, more preferably by 3 times or less, and most preferably by 1.5 times or less.

Even if the composite sintered body is exposed to plasma, the increase in surface roughness is not large compared to conventional plasma-resistant materials, and since it has a relatively low surface roughness even after plasma exposure, particles generated by etching can easily escape out of the chamber As a result, it is possible to reduce contaminant particles.

When the composite sintered body is exposed to CF ₄ / 0 ₂ plasma of 500 W output and 100 W bias for 3 hours, the etching depth may be 200 nm or less, preferably 180 nm or less, more preferably 150 nm or less can

The grain size of the composite sintered body may be 100 nm to 1 μm, preferably 100 nm to 500 nm, and most preferably 150 nm to 350 nm.

Here, the grain size of the composite sintered body means the average grain size of the grains.

The grain size of the composite sintered body is very small compared to conventional plasma-resistant materials, and as a result, the size of the particles generated by etching after plasma exposure is relatively small, so the generated particles can easily escape out of the chamber. Therefore, it is possible to reduce contaminant particles.

The composite sintered body may have a biaxial strength of 100 MPa or more, preferably a biaxial strength of 200 MPa or more, more preferably a biaxial strength of 300 MPa or more, and most preferably a biaxial strength of 350 MPa or more. can have

It may further include the step of molding the mixed yttria and magnesia before the step. The molding may be performed by cold isostatic pressing, but is not limited thereto.

In addition, it may further include a step of pre-sintering before the step. The step may be performed at a temperature of 900 °C to 1200 °C.

The plasma etching apparatus component manufactured by the method for manufacturing a plasma etching apparatus component for semiconductor manufacturing provided in another aspect of the present invention may be formed of a bulk material of the composite sintered body.

In addition, the plasma etching apparatus component manufactured by the method for manufacturing a plasma etching apparatus component for semiconductor manufacturing provided in another aspect of the present invention may be formed by coating the composite sintered body on another material. The other material may be, for example, metal, ceramic, polymer, etc., but is not limited to a specific material.

Plasma etching apparatus components manufactured by the method for manufacturing plasma etching apparatus components for semiconductor manufacturing provided in another aspect of the present invention may be, for example, nozzles, injectors, and rings, but are limited thereto No, it may be any component requiring plasma resistance in a plasma etching apparatus for semiconductor manufacturing.

In another aspect of the invention

A plasma etching apparatus for semiconductor manufacturing including the plasma etching apparatus component is provided.

Hereinafter, the present invention will be described in more detail through Examples, Comparative Examples and Experimental Examples. The scope of the present invention is not limited to specific embodiments, and should be construed according to the appended claims. In addition, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.

<Example 1>

50 vol% of Y ₂ O ₃ and 50 vol% of MgO were dried after planetary milling at 300 rpm for 12 hours using a jar and ball made of YSZ to prepare a mixed powder.

The prepared mixed powder was subjected to cold hydrostatic pressing for 5 minutes at 200 MPa, and pre-sintered in air at a temperature of 1000° C. for 1 hour. Thereafter, the composite sintered body was obtained by hot-pressing sintering at 1200° C. at 30 MPa for 1 hour. The relative density of this composite sintered body was measured to be 98%.

A schematic diagram of the manufacturing process of the above-described composite sintered body is shown in FIG. 2 .

<Example 2>

A composite sintered body was prepared in the same manner as in Example 1, but the composite sintered body having a relative density of 100% was obtained by hot pressing and sintering at 1300° C. at 30 MPa for 1 hour.

<Comparative Example 1>

Y ₂ O ₃ having a relative density of 98% was prepared.

<Comparative Example 2>

Y ₂ O ₃ having a relative density of 100% was prepared.

<Comparative Example 3>

A spinel (MgAl ₂ O ₄ ) having a relative density of 98% was prepared.

<Comparative Example 4>

A spinel (MgAl ₂ O ₄ ) having a relative density of 100% was prepared.

<Experimental Example 1> Measurement of weight loss per unit area

Dry Etcher was used as a plasma inductively coupled etching device (manufacturer: DMS, Silicon/metal hybrid etcher). For the ceramics of Examples 1 and 2 and Comparative Examples 1 to 4, a plasma of 500 W and a bias of 100 W were applied with a gas of CF ₄ 40 sccm + O ₂ 10 sccm under a vacuum condition of 5 mTorr. In contrast, the amount of weight loss per unit area according to the plasma exposure time was measured.

The result is shown in FIG. 1 .

In the case of Example 1, even with a relative density of 98%, an etching amount of 0.6 g/m ² per hour shows a significantly lower etching amount for plasma compared to yttria such as Comparative Examples 1 and 2, When compared with the spinel of Example 3 and Comparative Example 4, there was no significant difference in the amount of etching.

In the case of Example 2 having a relative density of 100%, the etching amount per hour of 0.3 g/m ² , as well as yttria such as Comparative Examples 1 and 2, and the spinel of Comparative Examples 3 and 4 were significantly reduced It can be seen that the etched amount is displayed.

In other words, the composite sintered body of Y ₂ O ₃ -MgO shows significantly improved plasma corrosion resistance compared to yttria and spinel used as conventional plasma-resistant ceramics, and is superior to the existing plasma-resistant ceramics even when the relative density is relatively low. Similar or significantly improved plasma corrosion resistance.

<Experimental Example 2> Measurement of etch depth

The ceramics of Examples 1 and 2 and Comparative Examples 1 to 4 were exposed to plasma in the same manner as in Experimental Example 1, but unlike Experimental Example 1, the etch depth was measured.

Since the weight reduction as in Experimental Example 1 may be affected by the specific gravity of the ceramic, measuring the etch depth as in Experimental Example 2 may be more suitable for evaluating plasma corrosion resistance.

The results for this are shown in FIG. 3 .

Examples 1 and 2 exhibited etch depths similar to those of Comparative Examples 1 and 2, respectively.

However, in the case of Examples 1 and 2, the strength is more than twice as high as those of Comparative Examples 1 and 2, and the price is less than half, so the utility of Examples 1 and 2 is expected to be much higher.

<Experimental Example 3> Comparison of grain size

SEM images for Example 2, Comparative Example 2, and Comparative Example 4 are shown in FIGS. 4a to 4c.

4A to 4C , it can be seen that the grain size of Example 2 is at the level of 300 nm, whereas in Comparative Examples 2 and 4, the grain size of Example 2 is much smaller than a few μm or more.

In the case of the ceramic of Example 2, it is relatively easy to sinter so that the grain size is small. Since it is easy to escape out of the chamber by the

<Experimental Example 4> Surface roughness measurement

For Examples 1 and 2, Comparative Example 2 and Comparative Example 4, after polishing to have a surface roughness (R _a ) of 2 nm, CF ₄ 40 sccm + O ₂ 10 sccm gas in a vacuum condition of 5 mTorr The ceramics were exposed to a plasma of 500 W and a bias of 100 W for 3 hours.

In contrast, the surface roughness (R _a ) after plasma exposure was measured and shown in FIGS. 5A to 5D .

In the case of Comparative Example 1 and Comparative Example 3, the surface roughness of 9.0 nm and 10.3 nm level after plasma exposure, respectively, whereas in the case of Example 1 and Example 2, Comparative Example 1 and Comparative Example 2 at the level of 2.28 nm and 6.05 nm, respectively It was confirmed that the surface roughness was much lower than that of 3.

When the difference in surface roughness before and after etching is not large as in Examples 1 and 2, since particles generated by plasma etching easily escape out of the chamber by pumping out, generation of contaminant particles can be reduced.

Claims (13)

30 vol% to 70 vol% of yttria (Y ₂ O ₃ ); and
30 vol% to 70 vol% of magnesia (MgO);
Including a composite sintered body comprising a,
Plasma etching device parts for semiconductor manufacturing, characterized in that it has plasma resistance.
According to claim 1,
The composite sintered body has a crystal grain size of 100 nm to 1 μm.
According to claim 1,
A plasma etching device component for manufacturing a semiconductor, characterized in that the grain size of the composite sintered body is 100 nm to 500 nm.
According to claim 1,
The composite sintered body is a plasma etching device component for manufacturing a semiconductor, characterized in that having a relative density of 90% or more.
According to claim 1,
When the composite sintered body is exposed to CF ₄ / 0 ₂ plasma of an output of 500 W and a bias of 100 W for 3 hours, the surface roughness (R _a ) is increased by 5 times or less. .
According to claim 1,
The composite sintered body has a surface roughness (R _a ) of 2 nm or less.
According to claim 1,
When the composite sintered body is exposed to CF ₄ / 0 ₂ plasma of 500 W output and 100 W bias for 3 hours, the etching depth is 200 nm or less.
The method of claim 1,
The composite sintered body is a plasma etching device component for manufacturing a semiconductor, characterized in that having a biaxial strength of 200 MPa or more.
According to claim 1,
The plasma etching device component for semiconductor manufacturing is a plasma etching device component for semiconductor manufacturing, characterized in that formed of the bulk material of the composite sintered body.
According to claim 1,
The plasma etching device component for semiconductor manufacturing is a plasma etching device component for semiconductor manufacturing, characterized in that the composite sintered body is coated on another material.
Mixing 30 vol% to 70 vol% of yttria (Y ₂ O ₃ ) and 30 vol% to 70 vol% of magnesia (MgO); and
Sintering the mixed yttria (Y ₂ O ₃ ) and magnesia (MgO);
Plasma etching device component manufacturing method for semiconductor manufacturing comprising a.
12. The method of claim 11,
The step of sintering the mixed yttria (Y ₂ O ₃ ) and magnesia (MgO) is a plasma etching apparatus component manufacturing method for semiconductor manufacturing, characterized in that performed at 1000 °C to 1500 °C.
A plasma etching apparatus for semiconductor manufacturing comprising the plasma etching apparatus component of claim 1 .

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