KR102258055B1 - Temperature monitoring system of laser annealing equipment - Google Patents

Abstract

The present invention relates to a temperature monitoring system of a laser annealing equipment for temperature measurement in a reaction part during a heat treatment process using a laser and temperature correction according to the physical properties of a workpiece, and in more detail, a more precise temperature measurement is possible. It relates to a temperature monitoring system of a laser annealing equipment capable of maintaining a fast process without slowing down the laser processing process by operating a separate monitoring device for measuring the emissivity independently from the movement of the laser beam for the process.

Description

Temperature monitoring system of laser annealing equipment

The present invention relates to a temperature monitoring system of a laser annealing equipment for temperature measurement in a reaction part and temperature correction according to physical properties of a workpiece during a heat treatment process using a laser.

In the semiconductor photo process, which is one of the semiconductor manufacturing processes, the adhesion of the photoresist film is improved before the photo-resist is applied, and the components such as solvent, polymer, and sensitizer in the photo-resist film are stabilized after application. For ease of adjustment, through a heat treatment process (annealing) in which the surface of the wafer is heated and then cooled to deform the material surface, impurity ions are implanted into the wafer and then activated, or silicon is recrystallized. do.

At this time, in the annealing process, since uniformization of the overall temperature of the wafer and precision of temperature control play a decisive role in forming the critical line width, the accuracy and uniformity of the target temperature is of paramount importance. The heat treatment (RTP, Rapid Thermal Process) method was the mainstream, but as the thickness of the semiconductor wafer became thinner, the existing annealing process had a limitation in that heat spread over the entire wafer, causing damage to peripheral devices and circuits. As disclosed in Korean Patent Laid-Open Publication No. 10-2004-0031276 (laser annealing equipment and silicon crystallization method using the same, published on April 13, 2004), the next-generation semiconductor process and flexible display of several nano-levels, such as a flexible display, low-temperature silicon LCD, etc. In the process, a laser annealing technology has been introduced that selectively processes a specific portion of the wafer without heating the entire wafer.

However, in the past, the movement of the laser beam on the wafer was controlled by using a stage that moves on the x and y axes.At this time, the laser beam itself points to a fixed place, so the instrument for temperature monitoring is fixed. It had to be installed to point to only one place. Recently, in order to shorten the process time, the technology of controlling the movement of the laser beam by using a scanner configured to move the direction in which the laser beam is irradiated to a fixed stage is attracting attention. In this case, the laser beam itself is Because it is moving, the measuring device for temperature monitoring is accompanied by the movement of the beam and faced the problem of tracking the reaction part.

Korean Laid-Open Patent Publication No. 10-2004-0031276 (Laser annealing equipment and silicon crystallization method using the same, published on April 13, 2004)

The present invention has been conceived to solve the above problems, and provides a temperature monitoring system capable of concurrently moving a laser beam in a scanner-type laser annealing equipment in which a laser beam moves.

In addition, the present invention provides a monitoring system capable of more precise temperature measurement by correcting the temperature according to the emissivity of the object to be processed.

In order to solve the above problems, the present invention is a fixed first laser oscillator 110 for emitting a process laser beam (L1) having a first wavelength;
Reflected and refracted through a pair of variable mirrors 121 and 122 for deflecting the process laser beam L1 applied from the fixed laser oscillator 110 and the pair of variable mirrors 121 and 122 Includes a scanning lens 123 (Scanning lens) for focusing the process laser beam L1, but collects the optical signal R1 emitted from the reaction part S irradiated with the process laser beam L1 Thus, the scanner unit 120 capable of collecting the optical signal (R1) without parallel movement of the reaction unit (S); And a first optical filter 210 provided on a path of light traveling between the laser oscillator 110 and the scanner unit 120 to transmit only the process laser beam L1 having the first wavelength, and the Includes; a detection unit 200 equipped with a first photosensor 270 for detecting the intensity of the optical signal R1 reflected from the first optical filter 210, wherein the detection unit 200 comprises the first laser oscillator. Through the first optical filter 210 provided between the 110 and the scanner unit 120, the process laser beam L1 irradiated to the surface of the workpiece 1 is irradiated with the reaction unit S. By measuring the intensity of the optical signal R1 emitted by heat generation, the temperature in the reaction unit S is detected without interfering with the operation of the variable mirrors 121 and 122 of the scanner unit 120. It is characterized by that.

In addition, the present invention is a monitoring provided with a temperature calculation unit 310 for calculating the process temperature (T) in the reaction unit (S) according to the intensity of the optical signal (R1) detected from the first photosensor 270. It characterized in that it further comprises a portion (300).

In addition, the temperature calculation unit is characterized in that it calculates the process temperature (T) in the reaction unit (S) through the following equation.

{ From here,

I: intensity of the optical signal R1 detected by the first photosensor

: 볼츠만상수,h: plank constant, c: speed of light, v: frequency of light,

: Boltzmann constant,

T: temperature of the reaction part}

In addition, the detection unit 200 includes a plurality of first photosensors 270 for detecting optical signals R1 of different wavelengths and the plurality of optical signals R1 applied from the first optical filter 210. It further includes a beam splitter 240 for splitting each of the first photosensors 270 of, and the temperature calculating part 310 is based on the optical signals R1 measured from the plurality of first photosensors 270. It is characterized in that the average value of the temperatures is defined as the process temperature (T).

In addition, a second laser oscillator 410 that emits a monitoring laser beam (L2) to an arbitrary point (P) on the surface of the workpiece (1) and the reflected light from which the monitoring laser beam (L2) is reflected. An emissivity measurement unit 400 provided with a second photosensor 420 for detecting the intensity of (R2); further comprising, the monitoring unit 300 includes the reflected light detected from the emissivity measurement unit 400 ( Further comprising an emissivity calculation unit 320 for calculating the emissivity (E) of the work piece (1) from the intensity of R2), the temperature calculation unit 310 is the calculated emissivity (E) of the work piece (1) It is characterized in that the process temperature (T) in the reaction unit (S) is corrected according to ).

In addition, the emissivity calculation unit of the reflected light (R2) of the monitoring laser beam (L2) reflected the moment the processing laser beam (L1) and the monitoring laser beam (L2) pass the same point (S, P) to the workpiece. It is characterized by calculating the emissivity (E) according to the intensity.

In addition, the monitoring unit 300 calculates the emissivity (E) at the foremost (P_edge) of the workpiece (1) to which the laser beam (L1) for the process is first irradiated, and in the reaction unit (S) It is characterized by correcting the process temperature (T) of.

In addition, the second laser oscillator 410 and the second photosensor 420 further comprises a driving unit 430 configured to be movable on any one plane parallel to the surface of the workpiece (1). do.

In addition, the driving unit 430 is operated to move the second laser oscillator 410 and the second photosensor 420 along a straight line passing through the center of the workpiece 1, the emissivity measuring unit ( 400) measures at least two points (P) where the monitoring laser beam (L2) irradiated from the second laser oscillator 410 and the reaction unit (S) irradiated with the process laser beam (L1) are matched. And, the emissivity calculating unit 320 is characterized in that by selecting the minimum value (min) of the intensity of light detected at each measured point (P), and determining the emissivity (E) of the workpiece (1). do.

In addition, the monitoring unit 300, a memory unit 330 for storing the process temperature (T1) in the reaction unit (S) in any one of the workpiece (1) the process is finished, and another one that starts the process. The process temperature (T2) measured from the workpiece (1) of is compared with the process temperature (T1) profile stored in the memory unit 330 to determine an abnormal signal in the process of the other workpiece (1). It characterized in that it further comprises a defective determination unit 340.

The present invention according to the above configuration is a scanner type laser annealing equipment that deflects the laser beam L1 emitted from the fixed laser oscillator to move the reaction part irradiated to the surface of the workpiece, and the laser beam L1 for the process is By detecting the intensity of the light signal (R1) emitted from the irradiated reaction part (S) and calculating the temperature, the movement of the reaction part is not parallel, preventing a decrease in the process speed of the laser annealing equipment and simultaneously monitoring the temperature in real time. There are possible advantages.

In addition, in the present invention, by measuring the emissivity (E) of the workpiece and correcting the process temperature (T) in the reaction unit (S), a more precise temperature measurement is possible, and at this time, a separate monitoring device for measuring the emissivity is provided. By operating independently of the movement of the process laser beam L1, there is an advantage of maintaining a fast process without reducing the speed of the laser processing process.

1 is a block diagram showing a monitoring system according to an embodiment of the present invention.
Figure 2 is an exemplary view showing the operation of the monitoring unit according to an embodiment of the present invention.
3 is an exemplary diagram showing a process sequence of the process laser beam L1.
Figure 4 is an exemplary view for explaining the operation of the emissivity measuring unit according to the process sequence of the laser beam (L1) for processing.

In the present invention, various modifications may be made and various embodiments may be provided, and specific embodiments are illustrated in the drawings and will be described in detail. However, this is not intended to limit the present invention to a specific embodiment, it should be understood to include all changes, equivalents, and substitutes included in the spirit and scope of the present invention.

When a component is referred to as being “connected” or “connected” to another component, it is understood that it may be directly connected or connected to the other component, but other components may exist in the middle. It should be.

Unless otherwise defined, all terms used herein including technical or scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs.

Terms such as those defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and should not be interpreted as an ideal or excessively formal meaning unless explicitly defined in the present application. Does not.

Hereinafter, the technical idea of the present invention will be described in more detail using the accompanying drawings.

The accompanying drawings are only an example illustrated to describe the technical idea of the present invention in more detail, so the technical idea of the present invention is not limited to the form of the accompanying drawings.

1 is a configuration diagram showing a monitoring system according to an embodiment of the present invention. Referring to FIG. 1, the monitoring system 1000 includes a laser annealing equipment 100, a detection unit 200, and a monitoring unit 300. ), and the laser annealing equipment 100 irradiates a process laser beam (L1) on the surface of the workpiece (1) to perform heat treatment on the surface of the workpiece (1). As a configuration for, in more detail, a fixed first laser oscillator 110 for emitting a process laser beam L1 having a first wavelength, and a process laser beam applied from the fixed first laser oscillator 110 A pair of variable mirrors (121, 122) for deflecting (L1) and a scanning lens (123, Scanning) for collecting the focus of the process laser beam (L1) reflected and refracted through the variable mirrors (121, 122) lens), and the scanner unit 120 is capable of collecting the optical signal R1 without moving the reaction unit S in parallel. It has the advantage of real-time temperature monitoring while preventing a decrease in process speed.

Here, the variable mirrors 121 and 122 are provided with a step motor for rotating a reflector for reflecting the applied laser beam, and by finely adjusting the angle of the reflector, the applied laser beam is deflected. ) To be reflected. At this time, the variable mirrors 121 and 122 are preferably made of a pair to move the process laser beam L1 irradiated to the surface of the workpiece 1 on a two-dimensional (x,y axis) plane. At this time, when the angle of the two variable mirrors 121 and 122 spaced apart by a predetermined distance (rotation of the motor) changes, the distance between the pair of variable mirrors 121 and 122 slightly changes, and accordingly As the process laser beam L1 irradiated to the workpiece 1 generates pincusion distortion due to refraction, the focus is not focused on the center of the irradiated reaction part SPOT, so the desired diameter Since it is not possible to form the reaction part (SPOT) of, the energy density is lowered accordingly, resulting in a problem in that precision processing cannot be performed. At this time, the scanning lens 123 may be formed of various scanning lenses for focusing on the surface of the workpiece forming a plane, but the precise of the variable mirrors 121 and 122 made of a galvanometer or galvo For control, it is preferable that the scanning lens 123 is formed of an F-theta lens in which the product of the focal length and the refractive angle forms a distance between the lens and the workpiece 1. In addition, the first laser oscillator 110 is preferably made of an optical fiber laser comprising a resonator using an optical fiber to which an element capable of obtaining them at a specific wavelength is added as a gain medium, but at this time, the first laser oscillator 110 Is not limited to the above-described configuration, and may be configured in various ways for irradiating the process laser beam L1 without departing from the gist of the present invention.

<Process temperature (T) detection method of the temperature monitoring system of the present invention>

The temperature monitoring system 1000 of the present invention is independent from the operation of a pair of variable mirrors 121 and 122 that change finely at high speed in the scanner-type laser annealing equipment 100, and the reaction unit S The main purpose is to detect the temperature at, and preferably, it is provided on the path of light traveling between the first laser oscillator 110 and the scanner unit 120, and is for a process having the first wavelength. A detector 200 including a first optical filter 210 that transmits only the laser beam L1 and a first photosensor 270 that detects the intensity of the optical signal R1 of reflected light reflected from the first optical filter. It may be configured to further include. Here, the first optical filter 210 is preferably made of a dichroic mirror that transmits light having a specific wavelength and reflects light having a wavelength other than, and at this time, the first optical filter 210 may be modified into various optical filters, such as a thin film filter, an interference filter, or a dichroic reflective mirror, without departing from the gist of the present invention.

That is, the detection unit 200 is a process laser irradiated to the surface of the workpiece 1 through the first optical filter 210 provided between the first laser oscillator 110 and the scanner unit 120. By measuring the intensity of the optical signal R1 emitted by the heat generated by the reaction unit S to which the beam L1 is irradiated, without interfering with the operation of the variable mirrors 121 and 122 of the scanner unit 120 , It is possible to detect the temperature in the reaction unit (S). At this time, the temperature monitoring system 1000 of the present invention is a temperature calculator that calculates the temperature T of the reaction unit S according to the intensity of the optical signal R1 detected from the first photosensor 270 ( A monitoring unit 300 including 310) is further included, and at this time, the temperature calculation unit 310 calculates the process temperature T through Equation 1 below.

Equation 1:

: 볼츠만상수, T : 반응부의 온도 이다.}{Here, I: intensity of the optical signal (R1) detected by the first photosensor, h: plank constant, c: speed of light, v: frequency of light,

: Boltzmann constant, T: It is the temperature of the reaction part.}

Here, the detection unit 200 may be configured to further include a second optical filter 260 that transmits only a signal having a specific wavelength to the first photosensor 270, and in general, the process temperature T is As it is made in the range of 1000 to 2000°C, it is preferable that the wavelength λ transmitted from the second optical filter 260 has an infrared wavelength (1 µm <λ <2 µm) with a high radiation amount.

In addition, the temperature monitoring system 1000 of the present invention further improves the precision of the process temperature T in the detection unit 200, and the detection unit 200 detects optical signals R1 of different wavelengths. A beam splitter 240 for splitting the plurality of first photosensors 271 and 272 and the optical signal R1 applied from the first optical filter 210 into the plurality of first photosensors 271 and 272, respectively In addition, the temperature calculation unit 310 defines an average value of the temperatures according to the optical signal R1 measured from the plurality of first photosensors 271 and 272 as the process temperature T, The calculated process temperature (T) by calculating a temperature according to the intensity of light at different wavelengths of one optical signal R1 emitted from the reaction unit S, and calculating an average value of the calculated plurality of temperatures. The precision of can be further improved.

In more detail, the detection unit 200 includes a first condensing lens 220 for condensing the optical signal R1 emitted from the first optical filter 210, and the light received from the first condensing lens 220. A beam expander 230 (beam expander) that allows the signal R1 to propagate in parallel without diverging, and a beam splitter that divides into plural pieces each having the same intensity by receiving the optical signal R1 that has passed through the beam expander 210 (240, beam splitter), a second condensing lens 250 for condensing each of the split optical signal R1 passing through the beam splitter 240, the optical signal R1 transmitted through the second condensing lens 250 ), a second optical filter 260 that transmits only the optical signal R1 of a specific wavelength and a plurality of first photosensors 271 that detect the intensity of the optical signal R1 applied from the second optical filter 260 , 272), and the number of wavelengths detected at this time, that is, the number of the first photosensors 270, can be variously modified according to the standards and required precision of the present invention without departing from the gist of the present invention. There will be.

<Correction of the process temperature (T) according to the emissivity (E) of the workpiece>

As described above, the temperature monitoring system 1000 of the present invention is characterized by having a non-contact detection method for detecting a process temperature (T) according to radiant heat in the reaction part (S) of the workpiece (1), At this time, if the workpiece (1) is made of a black body (theoretically, an object that completely absorbs light of all wavelengths) with an emissivity of 1, the light emitted from the reaction unit (S) The temperature calculated using the intensity of the signal R1 can be defined as the actual temperature of the reaction part S, but in most cases in the natural world, the actual emissivity E has a value less than 1, so that the process temperature is more accurate. In order to calculate (T), it is necessary to correct the process temperature (T) by measuring an accurate emissivity (E) value of the workpiece (1) in real time.

At this time, the emissivity (E) has a relational expression in Equation 2 below according to Kirchoff's law.

Equation 2:

{Here, E: Emissivity, r: Reflectivity, and t: Transmissivity.}

That is, in order to calculate the emissivity (E) according to Equation 2, the reflectance (r) and transmittance (t) of the workpiece (1) must be measured. ), the entire area of the wafer is heated by using a heater. At this time, the optical absorption coefficient of silicon becomes very high at a high temperature of 900°C or higher, making it difficult to accurately measure the transmitted light. Therefore, wafers with a specific thickness or more In the case of, it is preferable to calculate the transmittance (t) of Equation 2 by specifying 0.

2 is an exemplary diagram showing the operation of a monitoring unit according to an embodiment of the present invention, and FIG. 3 is an exemplary diagram showing a process sequence of a general process laser beam L1, referring to FIGS. 1 to 3 , The temperature monitoring system 1000 of the present invention is a second laser oscillator 410 for emitting a monitoring laser beam L2 having a second wavelength at an arbitrary point P on the surface of the workpiece 1 And an emissivity measuring unit 400 including a second photosensor 420 for detecting the intensity of the reflected light R2 from which the monitoring laser beam L2 is reflected. At this time, the monitoring unit 300 further includes an emissivity calculating unit 320 for calculating the emissivity E of the workpiece 1 from the intensity of the reflected light R2 detected from the emissivity measuring unit 400, and , The temperature calculating part 310 corrects the process temperature T in the reaction part S according to the emissivity E of the workpiece 1 calculated by the emissivity calculating part 320. Here, the monitoring laser beam L2 preferably has a wavelength different from that of the process laser beam L1, and more preferably 600 to 700 nm wavelength may be used. That is, the second photosensor 420 may be positioned where the reflected monitoring laser beam R2 is directed, and the intensity of the reflected light R2 reflected by the monitoring laser beam L2 may be measured. At this time, the emissivity calculation unit 320 compares the measured value with the intensity of the reflected light R2 of the monitoring laser beam L2 before the incident of the process laser beam L1 to calculate the reflectance R. I can. In more detail, as shown in (b) of FIG. 2, the intensity R2 at which the monitoring laser beam L2 is reflected is decreased due to the interference of the incident process laser beam L1, At this time, by comparing the intensity of the beam at the point min at which the intensity of the reflected light R2 is the minimum and the point where the intensity of the reflected light R2 according to the monitoring laser beam L2 is constant, the workpiece 1 ) Can be calculated, and at this time, the point at which the intensity of the reflected light R2 becomes the minimum (min) is the point at which the reaction unit S becomes the highest point of the heated temperature, and the workpiece ( The reflectance (r) value of 1) is the intensity of the reflected light R2 at the point when the intensity of the reflected light R2 is minimized compared to the intensity of the reflected light R2 before the process laser beam L1 is incident. Corresponds to the ratio.

In addition, when the workpiece 1 is transparent or is made very thin to a specific thickness or less, a separate photosensor (not shown) for detecting transmitted light at a position through which the monitoring laser beam L2 is transmitted is provided, Considering the measured transmittance (T) value, it would be desirable to obtain the emissivity (E) value according to Equation 2 above.

At this time, the emissivity calculation unit 320 is a monitoring laser beam (L2) reflected at the moment when the processing laser beam (L1) and the monitoring laser beam (L2) pass the same point (S, P) to the workpiece (1). ) It is preferable to calculate the emissivity (E) according to the intensity of the reflected light (R2), and more preferably, as shown in FIG. 3, the workpiece (1) to which the laser beam for the process (L1) is first irradiated. ), by calculating the emissivity (E) at the extreme end (P_edge), the process temperature (T) at the reaction part (S) where the process laser beam (L1) is first irradiated to the workpiece (1) where the process is started. Can be corrected.

In addition, the emissivity measurement unit 400 is configured such that the second laser oscillator 410 and the second photosensor 420 are movable on any one plane (xy) parallel to the surface of the workpiece (1). The emissivity (E) in the reaction unit (S) is adjusted in response to the movement of the laser beam (L1) for processing while further including a driving unit (430), while the process of any one of the workpieces (1) is in progress. It can be detected in real time. That is, the position information of the reaction unit S to which the process laser beam L1 is irradiated and the position information of the point P to which the monitoring laser beam L2 is irradiated are interlocked, and the emissivity measurement unit 400 It is desirable to control its movement. However, when a stage or a gantry system capable of moving the driving unit 430 of the emissivity measuring unit 400 is used, there is a limitation that it is difficult to cope with the deflection speed of the laser beam L1 for the process.

That is, the driving unit 430 of the present invention is operated to move the second laser oscillator 410 and the second photosensor 420 along a straight line passing through the center of the workpiece 1, At least two points (P) where the monitoring laser beam (L2) irradiated from the second laser oscillator 410 and the reaction unit (S) irradiated with the process laser beam (L1) are matched are measured, and the The emissivity calculation unit 320 determines the emissivity (E) of the workpiece by selecting the minimum value (min) of the intensity of light detected at each measured point (P). You can overcome your limitations. In more detail, as shown in Figure 4, the monitoring laser beam (L2) is positioned to irradiate the edge (P_edge) of the foremost end of the workpiece (1) (a), after the process laser beam (L1) When passing through the uppermost edge P_edge, the monitoring laser beam L2 moves a predetermined distance toward the center of the workpiece 1 and waits (b). It is preferable that the distance (L2) moves is appropriately calculated in consideration of the distribution of the workpiece (1), and in the present invention, it is described including the most edge (P_edge), the center point (P_center), and the middle point (P_middle). At this time, the process temperature (T) of the laser beam (L1) for the process proceeding from the uppermost edge (P_edge) to the middle point (P_middle) is the emissivity calculated from the uppermost edge (P_edge). Correction using (E), and when the min_middle of the reflectance r_middle re-measured at the middle point (P_middle) is less than the min_edge of the previously measured reflectivity r_edge, the re- Using the emissivity (E) according to the measured reflectance (r_middle), the measured process temperature (T) is corrected. Subsequently, in the processes (c)-(d), a series of processes are repeated in (a)-(b) described above, and at this time, the laser beam for the process (L1) passes the center point (P_center) of the workpiece (1). Thereafter, the monitoring laser beam L2 moves to the position of the uppermost edge P_edge, and waits for the measurement of the other workpiece 1 starting in the next process.

That is, the error rate according to the lowest point (min) of the re-updated reflectance (r) is due to the error rate in the scattering diagram of the workpiece, and in this case, compared to the error rate in the scattering diagram of the workpiece 1, the reflectance r When a difference greater than the threshold value occurs, it may be determined as a defect in the laser heat treatment process of the workpiece 1.

Accordingly, the monitoring unit 300 of the present invention includes a memory unit 330 that stores the process temperature T1 in the reaction unit S in any one of the workpieces 1 at which the process is finished, and the process starts. An abnormal signal in the process of the other work piece 1 by comparing the process temperature T2 measured from the other work piece 1 with the process temperature T1 profile stored in the memory unit 330 It is preferable to control the laser annealing equipment 100 to stop the process of the next wafer when there is an abnormal point in the corrected temperature profile by further including the defect determination unit 340 to determine the error.

The present invention is not limited to the above-described embodiments, and of course, various modifications can be made without departing from the gist of the present invention as claimed in the claims.

1000: monitoring system
100: layer annealing equipment
110: first laser oscillator 120: scanner unit
121, 122: variable mirror 123: scanning lens
200: detection unit
210: first optical filter
220: first condensing lens 230: beam expander
240: beam splitter 250, 251, 252: second condensing lens
260, 261, 262: second optical filter 270, 271, 272: first photo sensor
300: monitoring unit
310: temperature calculation unit 320: emissivity calculation unit
330: memory unit 340: defect determination unit
400: emissivity measuring unit
410: second laser oscillator 420: second photo sensor
430: drive unit
1: wafer S: reaction part
L1: Process laser beam R1: Optical signal emitted from the reaction section
L2: Monitoring laser beam R2: Reflected light of monitoring laser beam
P: monitoring point
P_e: Edge P_m: middle
P_c: Center

Claims (10)

A fixed first laser oscillator 110 for emitting a process laser beam L1 having a first wavelength;
Reflected and refracted through a pair of variable mirrors 121 and 122 for deflecting the process laser beam L1 applied from the fixed laser oscillator 110 and the pair of variable mirrors 121 and 122 Includes a scanning lens 123 (Scanning lens) for focusing the process laser beam L1, but collects the optical signal R1 emitted from the reaction part S irradiated with the process laser beam L1 Thus, the scanner unit 120 capable of collecting the optical signal (R1) without parallel movement of the reaction unit (S); And
The first optical filter 210 and the first optical filter 210 are provided on the path of light traveling between the laser oscillator 110 and the scanner unit 120 and transmit only the process laser beam L1 having the first wavelength. Including; a detection unit 200 provided with a first photosensor 270 for detecting the intensity of the optical signal (R1) reflected from the 1 optical filter 210,
The detection unit 200 is a process laser beam (L1) irradiated to the surface of the workpiece 1 through a first optical filter 210 provided between the first laser oscillator 110 and the scanner unit 120. ), by measuring the intensity of the optical signal R1 emitted by the heat generated by the irradiated reaction unit S, without interfering with the operation of the variable mirrors 121 and 122 of the scanner unit 120, the reaction The temperature monitoring system of the laser annealing equipment, characterized in that detecting the temperature in the part (S).
The method of claim 1,
A monitoring unit 300 including a temperature calculation unit 310 for calculating a process temperature T in the reaction unit S according to the intensity of the optical signal R1 detected from the first photosensor 270; Temperature monitoring system of the laser annealing equipment, characterized in that it further comprises.
The method of claim 2,
The temperature calculation unit 310 is a temperature monitoring system of a laser annealing equipment, characterized in that to calculate the process temperature (T) in the reaction unit (S) through the following equation.

{ From here,
I: intensity of the optical signal R1 detected by the first photosensor
h: plank constant, c: speed of light, v: frequency of light,

: Boltzmann constant,
T: temperature of the reaction part}
The method of claim 2,
The detection unit 200,
A plurality of first photosensors 270 for detecting optical signals R1 of different wavelengths, and
Further comprising a beam splitter 240 for dividing the optical signal R1 applied from the first optical filter 210 by the plurality of first photosensors 270, respectively,
The temperature calculator 310 monitors the temperature of the laser annealing equipment, characterized in that the average value of the temperatures according to the optical signal R1 measured from the plurality of first photosensors 270 is defined as the process temperature T. system.
The method of claim 2,
A second laser oscillator 410 for emitting a monitoring laser beam L2 to an arbitrary point P on the surface of the workpiece 1 and the reflected light R2 from which the monitoring laser beam L2 is reflected. Including further; ), the emissivity measuring unit 400 provided with a second photosensor 420 for detecting the intensity of the,
The monitoring unit 300,
Further comprising an emissivity calculating unit 320 for calculating the emissivity E of the workpiece 1 from the intensity of the reflected light R2 detected by the emissivity measuring unit 400,
The temperature calculation unit 310 is a temperature monitoring system of a laser annealing equipment, characterized in that correcting the process temperature (T) in the reaction unit (S) according to the calculated emissivity (E) of the workpiece (1) .
The method of claim 5,
The emissivity calculation unit 320,
According to the intensity of the reflected light R2 of the monitoring laser beam L2 that is reflected at the moment when the process laser beam L1 and the monitoring laser beam L2 pass the same point S, P on the workpiece 1 Temperature monitoring system of a laser annealing equipment, characterized in that calculating the emissivity (E).
The method of claim 6,
The monitoring unit 300,
Compensating the process temperature (T) in the reaction unit (S) by calculating the emissivity (E) at the leading edge (P_edge) of the workpiece (1) to which the process laser beam (L1) is first irradiated. Temperature monitoring system of the laser annealing equipment, characterized in that.
The method of claim 5,
The emissivity measurement unit 400,
The second laser oscillator 410 and the second photosensor 420 are configured to move on any one plane parallel to the surface of the workpiece (1); a driving unit (430); characterized in that it further comprises a. Temperature monitoring system for laser annealing equipment.
The method of claim 8,
The driving unit 430,
Operated to move the second laser oscillator 410 and the second photosensor 420 along a certain straight line passing through the center of the workpiece (1),
The emissivity measurement unit 400,
At least two points P at which the monitoring laser beam L2 irradiated from the second laser oscillator 410 and the reaction unit S irradiated with the process laser beam L1 coincide are measured,
The emissivity calculation unit 320,
A temperature monitoring system of a laser annealing equipment, characterized in that for determining the emissivity (E) of the workpiece (1) by selecting a minimum value (min) of the intensity of light detected at each measured point (P).
The method according to any one of claims 2 to 9,
The monitoring unit 300,
A memory unit 330 for storing the process temperature T1 in the reaction unit S in any one of the workpieces 1 at which the process has been completed, and
The process temperature (T2) measured from the other work piece (1) starting the process is compared with the process temperature (T1) profile stored in the memory unit 330, and the process of the other work piece (1) Temperature monitoring system of the laser annealing equipment, characterized in that it further comprises a defect determination unit 340 for determining an abnormal signal in the.

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