KR101986172B1 - Novel compound for organic electronic element, organic electronic element using the same, and a electronic device thereof - Google Patents
Novel compound for organic electronic element, organic electronic element using the same, and a electronic device thereof Download PDFInfo
- Publication number
- KR101986172B1 KR101986172B1 KR1020180016850A KR20180016850A KR101986172B1 KR 101986172 B1 KR101986172 B1 KR 101986172B1 KR 1020180016850 A KR1020180016850 A KR 1020180016850A KR 20180016850 A KR20180016850 A KR 20180016850A KR 101986172 B1 KR101986172 B1 KR 101986172B1
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- KR
- South Korea
- Prior art keywords
- group
- substituted
- aryl
- organic
- unsubstituted
- Prior art date
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 80
- 125000003118 aryl group Chemical group 0.000 claims description 55
- 239000011368 organic material Substances 0.000 claims description 45
- 125000001424 substituent group Chemical group 0.000 claims description 43
- 125000000217 alkyl group Chemical group 0.000 claims description 33
- 125000003545 alkoxy group Chemical group 0.000 claims description 25
- 125000005843 halogen group Chemical group 0.000 claims description 21
- 125000000623 heterocyclic group Chemical group 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 20
- 125000003342 alkenyl group Chemical group 0.000 claims description 20
- 125000002560 nitrile group Chemical group 0.000 claims description 19
- 229910052805 deuterium Inorganic materials 0.000 claims description 18
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 14
- 125000001072 heteroaryl group Chemical group 0.000 claims description 14
- 125000003277 amino group Chemical group 0.000 claims description 13
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 10
- 125000005018 aryl alkenyl group Chemical group 0.000 claims description 10
- 125000005842 heteroatom Chemical group 0.000 claims description 10
- 125000000592 heterocycloalkyl group Chemical group 0.000 claims description 10
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 125000005264 aryl amine group Chemical group 0.000 claims description 6
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 6
- 125000001931 aliphatic group Chemical group 0.000 claims description 5
- 125000000304 alkynyl group Chemical group 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 125000003282 alkyl amino group Chemical group 0.000 claims description 4
- 235000010290 biphenyl Nutrition 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 3
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 claims description 3
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 claims description 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 125000004104 aryloxy group Chemical group 0.000 claims description 3
- 239000004305 biphenyl Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- RQMWVVBHJMUJNZ-UHFFFAOYSA-N 4-chloropyridin-2-amine Chemical group NC1=CC(Cl)=CC=N1 RQMWVVBHJMUJNZ-UHFFFAOYSA-N 0.000 claims 2
- 125000000714 pyrimidinyl group Chemical group 0.000 claims 2
- 239000010410 layer Substances 0.000 description 128
- 239000000463 material Substances 0.000 description 83
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 42
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 40
- 239000012044 organic layer Substances 0.000 description 36
- 239000000203 mixture Substances 0.000 description 35
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 30
- 239000000047 product Substances 0.000 description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- 238000002347 injection Methods 0.000 description 23
- 239000007924 injection Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 21
- 239000000741 silica gel Substances 0.000 description 21
- 229910002027 silica gel Inorganic materials 0.000 description 21
- 229960001866 silicon dioxide Drugs 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000003786 synthesis reaction Methods 0.000 description 19
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 18
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 18
- PTLIZOFGXLGHSY-UHFFFAOYSA-N dibutylphosphane Chemical compound CCCCPCCCC PTLIZOFGXLGHSY-UHFFFAOYSA-N 0.000 description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 18
- DMVOXQPQNTYEKQ-UHFFFAOYSA-N biphenyl-4-amine Chemical compound C1=CC(N)=CC=C1C1=CC=CC=C1 DMVOXQPQNTYEKQ-UHFFFAOYSA-N 0.000 description 16
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- -1 carbazole compound Chemical class 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 230000005525 hole transport Effects 0.000 description 10
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000010189 synthetic method Methods 0.000 description 10
- PJRGCJBBXGNEGD-UHFFFAOYSA-N 2-bromo-9h-carbazole Chemical compound C1=CC=C2C3=CC=C(Br)C=C3NC2=C1 PJRGCJBBXGNEGD-UHFFFAOYSA-N 0.000 description 8
- 239000011541 reaction mixture Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 239000012267 brine Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001308 synthesis method Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 125000005266 diarylamine group Chemical group 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010898 silica gel chromatography Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 4
- 238000000434 field desorption mass spectrometry Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- XEZNGIUYQVAUSS-UHFFFAOYSA-N 18-crown-6 Chemical compound C1COCCOCCOCCOCCOCCO1 XEZNGIUYQVAUSS-UHFFFAOYSA-N 0.000 description 3
- APSMUYYLXZULMS-UHFFFAOYSA-N 2-bromonaphthalene Chemical compound C1=CC=CC2=CC(Br)=CC=C21 APSMUYYLXZULMS-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 125000000732 arylene group Chemical group 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000010345 tape casting Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 2
- DLKQHBOKULLWDQ-UHFFFAOYSA-N 1-bromonaphthalene Chemical compound C1=CC=C2C(Br)=CC=CC2=C1 DLKQHBOKULLWDQ-UHFFFAOYSA-N 0.000 description 2
- KIZAMQGVKVZLML-UHFFFAOYSA-N 2-bromo-9-naphthalen-1-ylcarbazole Chemical compound C12=CC=CC=C2C2=CC=C(Br)C=C2N1C1=CC=CC2=CC=CC=C12 KIZAMQGVKVZLML-UHFFFAOYSA-N 0.000 description 2
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 2
- 101100030361 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pph-3 gene Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229960003540 oxyquinoline Drugs 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- HXITXNWTGFUOAU-UHFFFAOYSA-N phenylboronic acid Chemical compound OB(O)C1=CC=CC=C1 HXITXNWTGFUOAU-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 125000006749 (C6-C60) aryl group Chemical group 0.000 description 1
- NHEKBOACSUDJKR-UHFFFAOYSA-N 1,2-bis(2,4,4-triphenylbuta-1,3-dienyl)benzene Chemical compound C1(=CC=CC=C1)C(=CC(=CC1=C(C=CC=C1)C=C(C=C(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1 NHEKBOACSUDJKR-UHFFFAOYSA-N 0.000 description 1
- YRPIGRRBBMFFBE-UHFFFAOYSA-N 1-(4-bromophenyl)naphthalene Chemical compound C1=CC(Br)=CC=C1C1=CC=CC2=CC=CC=C12 YRPIGRRBBMFFBE-UHFFFAOYSA-N 0.000 description 1
- FWIROFMBWVMWLB-UHFFFAOYSA-N 1-bromo-3-nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC(Br)=C1 FWIROFMBWVMWLB-UHFFFAOYSA-N 0.000 description 1
- HQJQYILBCQPYBI-UHFFFAOYSA-N 1-bromo-4-(4-bromophenyl)benzene Chemical group C1=CC(Br)=CC=C1C1=CC=C(Br)C=C1 HQJQYILBCQPYBI-UHFFFAOYSA-N 0.000 description 1
- AITNMTXHTIIIBB-UHFFFAOYSA-N 1-bromo-4-fluorobenzene Chemical compound FC1=CC=C(Br)C=C1 AITNMTXHTIIIBB-UHFFFAOYSA-N 0.000 description 1
- PKJBWOWQJHHAHG-UHFFFAOYSA-N 1-bromo-4-phenylbenzene Chemical group C1=CC(Br)=CC=C1C1=CC=CC=C1 PKJBWOWQJHHAHG-UHFFFAOYSA-N 0.000 description 1
- NXYICUMSYKIABQ-UHFFFAOYSA-N 1-iodo-4-phenylbenzene Chemical group C1=CC(I)=CC=C1C1=CC=CC=C1 NXYICUMSYKIABQ-UHFFFAOYSA-N 0.000 description 1
- NHPPIJMARIVBGU-UHFFFAOYSA-N 1-iodonaphthalene Chemical compound C1=CC=C2C(I)=CC=CC2=C1 NHPPIJMARIVBGU-UHFFFAOYSA-N 0.000 description 1
- RUFPHBVGCFYCNW-UHFFFAOYSA-N 1-naphthylamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1 RUFPHBVGCFYCNW-UHFFFAOYSA-N 0.000 description 1
- LBQFCUKWBFQOCF-UHFFFAOYSA-N 2-[(1-oxo-2H-naphthalen-2-yl)amino]-2H-naphthalen-1-one Chemical compound C1(C(C=CC2=CC=CC=C12)NC1C(C2=CC=CC=C2C=C1)=O)=O LBQFCUKWBFQOCF-UHFFFAOYSA-N 0.000 description 1
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 1
- MBHPOBSZPYEADG-UHFFFAOYSA-N 2-bromo-9,9-dimethylfluorene Chemical compound C1=C(Br)C=C2C(C)(C)C3=CC=CC=C3C2=C1 MBHPOBSZPYEADG-UHFFFAOYSA-N 0.000 description 1
- WNXNWOBGPRKOJF-UHFFFAOYSA-N 2-bromo-9,9-diphenylfluorene Chemical compound C12=CC(Br)=CC=C2C2=CC=CC=C2C1(C=1C=CC=CC=1)C1=CC=CC=C1 WNXNWOBGPRKOJF-UHFFFAOYSA-N 0.000 description 1
- PYHCFFLUGHKAPZ-UHFFFAOYSA-N 2-bromo-9-naphthalen-2-ylcarbazole Chemical compound C12=CC=CC=C2C2=CC=C(Br)C=C2N1C1=CC=C(C=CC=C2)C2=C1 PYHCFFLUGHKAPZ-UHFFFAOYSA-N 0.000 description 1
- SOODLDGRGXOSTA-UHFFFAOYSA-N 2-bromo-9-phenylcarbazole Chemical compound C=1C(Br)=CC=C(C2=CC=CC=C22)C=1N2C1=CC=CC=C1 SOODLDGRGXOSTA-UHFFFAOYSA-N 0.000 description 1
- FRNLBIWVMVNNAZ-UHFFFAOYSA-N 2-iodonaphthalene Chemical compound C1=CC=CC2=CC(I)=CC=C21 FRNLBIWVMVNNAZ-UHFFFAOYSA-N 0.000 description 1
- CCZWSTFVHJPCEM-UHFFFAOYSA-N 2-iodopyridine Chemical compound IC1=CC=CC=N1 CCZWSTFVHJPCEM-UHFFFAOYSA-N 0.000 description 1
- JBIJLHTVPXGSAM-UHFFFAOYSA-N 2-naphthylamine Chemical compound C1=CC=CC2=CC(N)=CC=C21 JBIJLHTVPXGSAM-UHFFFAOYSA-N 0.000 description 1
- BBCLXYJRPRRZQW-UHFFFAOYSA-N 2-phenylnaphthalen-1-amine Chemical compound C1=CC2=CC=CC=C2C(N)=C1C1=CC=CC=C1 BBCLXYJRPRRZQW-UHFFFAOYSA-N 0.000 description 1
- DMEVMYSQZPJFOK-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene Chemical group N1=NN=C2C3=CC=CC=C3C3=CC=NN=C3C2=N1 DMEVMYSQZPJFOK-UHFFFAOYSA-N 0.000 description 1
- FDPBPKDNWCZVQR-UHFFFAOYSA-N 3-bromodibenzothiophene Chemical compound C1=CC=C2C3=CC=C(Br)C=C3SC2=C1 FDPBPKDNWCZVQR-UHFFFAOYSA-N 0.000 description 1
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- GTJFRSVWOUWTDJ-UHFFFAOYSA-N 4-bromo-2-nitro-1-phenylbenzene Chemical group [O-][N+](=O)C1=CC(Br)=CC=C1C1=CC=CC=C1 GTJFRSVWOUWTDJ-UHFFFAOYSA-N 0.000 description 1
- SQTLUXJWUCHKMT-UHFFFAOYSA-N 4-bromo-n,n-diphenylaniline Chemical compound C1=CC(Br)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 SQTLUXJWUCHKMT-UHFFFAOYSA-N 0.000 description 1
- QJPJQTDYNZXKQF-UHFFFAOYSA-N 4-bromoanisole Chemical compound COC1=CC=C(Br)C=C1 QJPJQTDYNZXKQF-UHFFFAOYSA-N 0.000 description 1
- BMWFGSBSRCFWTA-UHFFFAOYSA-N 4-n,4-n-diphenyl-1-n-(4-phenylphenyl)benzene-1,4-diamine Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1NC(C=C1)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 BMWFGSBSRCFWTA-UHFFFAOYSA-N 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- H01L51/0072—
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
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- H01L51/006—
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
본 발명은 소자의 발광효율, 안정성 및 수명을 향상시킬 수 있는 신규 화합물 및 이를 이용한 유기전기소자, 그 전자 장치를 제공한다.The present invention provides a novel compound capable of improving luminous efficiency, stability and lifetime of a device, an organic electric device using the same, and an electronic device thereof.
Description
본 발명은 유기전기소자용 신규 화합물, 이를 이용하는 유기전기소자 및 그 전자 장치에 관한 것이다.The present invention relates to a novel compound for an organic electric device, an organic electric device using the same, and an electronic device therefor.
1980년대 이스트만 코닥사의 씨. 더블유. 탕(C. W. Tang) 등은 각종 역할을 각 재료에 분담시킨 적층 구조 소자를 개발함으로써, 유기 재료를 이용한 유기전기발광 소자를 실용적인 것으로 만들었다. 그들은 전자를 수송할 수 있는 형광체와 정공을 수송할 수 있는 유기물을 적층하고, 양쪽의 전하를 형광체의 층 중에 주입하여 발광시킴으로써, 10 V 이하의 전압으로 1000 cd/m2 이상의 고휘도를 얻을 수 있도록 하였다.Mr. Eastman Kodak of the 1980s. W. CW Tang et al. Have made organic electroluminescent devices using organic materials practical by developing a laminated structure device in which various roles are shared among various materials. In order to obtain a high luminance of more than 1000 cd / m 2 at a voltage of 10 V or lower by laminating a phosphor capable of transporting electrons and an organic material capable of transporting holes and injecting both charges into the phosphor layer Respectively.
일반적으로 유기 발광 현상이란 유기 물질을 이용하여 전기에너지를 빛 에너지로 전환시켜주는 현상을 말한다. 유기 발광 현상을 이용하는 유기전기소자는 통상 양극과 음극 및 이 사이에 유기물층을 포함하는 구조를 가진다. 여기서 유기물 층은 유기전기소자의 효율과 안정성을 높이기 위하여 각기 다른 물질로 구성된 다층의 구조로 이루어진 경우가 많으며, 예컨대 정공주입층, 정공수송층, 발광층, 전자수송층 및 전자주입층 등으로 이루어질 수 있다. In general, organic light emission phenomenon refers to a phenomenon in which an organic material is used to convert electric energy into light energy. An organic electric device using an organic light emitting phenomenon generally has a structure including an anode, an anode, and an organic material layer therebetween. Here, in order to increase the efficiency and stability of the organic electronic device, the organic material layer is often formed of a multilayer structure composed of different materials, and may be formed of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
유기전기소자에서 유기물층으로 사용되는 재료는 기능에 따라, 발광 재료와 전하 수송 재료, 예컨대 정공주입 재료, 정공수송 재료, 전자수송 재료, 전자주입 재료 등으로 분류될 수 있다. 그리고, 상기 발광 재료는 분자량에 따라 고분자형과 저분자형으로 분류될 수 있고, 발광 메커니즘에 따라 전자의 일중항 여기상태로부터 유래되는 형광 재료와 전자의 삼중항 여기상태로부터 유래되는 인광 재료로 분류될 수 있다. 또한, 발광 재료는 발광색에 따라 청색, 녹색, 적색 발광 재료와 보다 나은 천연색을 구현하기 위해 필요한 노란색 및 주황색 발광 재료로 구분될 수 있다.A material used as an organic material layer in an organic electric device may be classified into a light emitting material and a charge transporting material such as a hole injecting material, a hole transporting material, an electron transporting material, and an electron injecting material depending on functions. The light emitting material may be classified into a polymer type and a low molecular type depending on the molecular weight, and may be classified into a phosphorescent material derived from singlet excited state of electrons and a phosphorescent material derived from the triplet excited state of electrons . Further, the light emitting material can be classified into blue, green, and red light emitting materials and yellow and orange light emitting materials required to realize better natural color depending on the luminescent color.
특히, 유기전기소자의 우수한 수명 특성을 위해 정공 수송층 또는 완충층(buffer layer)으로 삽입되는 유기물질에 관해 여러 연구가 진행되고 있으며, 이를 위해 양극으로부터 유기층으로의 높은 정공 이동 특성을 부여하면서 증착 후 박막 형성시 균일도가 높고 결정화도가 낮은 정공 주입층 재료가 요구되고 있다.Particularly, various studies have been conducted on organic materials inserted into a hole transporting layer or a buffer layer for an excellent lifetime characteristic of an organic electric device. To this end, a high hole transporting property from an anode to an organic layer is given, A hole injection layer material having high uniformity and low crystallinity is required.
유기전기소자의 수명단축의 원인 중 하나인 양극전극(ITO)으로부터 금속 산화물이 유기층으로 침투 확산되는 것을 지연시키며, 소자 구동시 발생되는 주울열(Joule heating)에 대해서도 안정된 특성, 즉 높은 유리 전이 온도를 갖는 정공 주입층 재료에 대한 개발이 필요하다. 또한 정공 수송층 재료의 낮은 유리전이 온도는 소자 구동시에 박막 표면의 균일도가 무너지는 특성에 따라 소자수명에 큰 영향을 미치는 것으로 보고되고 있다. 또한, OLED 소자의 형성에 있어서 증착방법이 주류를 이루고 있으며, 이러한 증착방법에 오랫동안 견딜 수 있는 재료 즉 내열성 특성이 강한 재료가 필요한 실정이다. It is possible to delay penetration and diffusion of the metal oxide from the anode electrode (ITO), which is one of the causes of shortening the lifetime of the organic electronic device, and to stabilize the joule heating caused by driving the device, Lt; RTI ID = 0.0 > layer < / RTI > It is also reported that the low glass transition temperature of the hole transporting layer material significantly affects the lifetime of the device depending on the characteristics of the uniformity of the thin film surface collapsing during device operation. In addition, the deposition method is the mainstream in the formation of OLED devices, and a material that can withstand such a long time, that is, a material having high heat resistance characteristics, is required.
한편, 발광 재료로서 하나의 물질만 사용하는 경우 분자간 상호 작용에 의하여 최대 발광 파장이 장파장으로 이동하고 색순도가 떨어지거나 발광 감쇄 효과로 소자의 효율이 감소되는 문제가 발생하므로, 색순도의 증가와 에너지 전이를 통한 발광 효율을 증가시키기 위하여 발광 재료로서 호스트/도판트계를 사용할 수 있다. 그 원리는 발광층을 형성하는 호스트보다 에너지 대역 간극이 작은 도판트를 발광층에 소량 혼합하면, 발광층에서 발생한 엑시톤이 도판트로 수송되어 효율이 높은 빛을 내는 것이다. 이때 호스트의 파장이 도판트의 파장대로 이동하므로, 이용하는 도판트의 종류에 따라 원하는 파장의 빛을 얻을 수 있다. On the other hand, when only one material is used as a light emitting material, there arises a problem that the maximum light emission wavelength shifts to a long wavelength due to intermolecular interaction, the color purity decreases, or the efficiency of the device decreases due to the light emission attenuating effect. A host / dopant system may be used as a light emitting material in order to increase the light emitting efficiency through the light emitting layer. When the dopant having a smaller energy band gap than the host forming the light emitting layer is mixed with a small amount of the light emitting layer, the excitons generated in the light emitting layer are transported to the dopant to emit light with high efficiency. At this time, since the wavelength of the host is shifted to the wavelength band of the dopant, the desired wavelength light can be obtained depending on the type of the dopant used.
전술한 유기전기소자가 갖는 우수한 특징들을 충분히 발휘하기 위해서는 소자 내 유기물층을 이루는 물질, 예컨대 정공주입 물질, 정공수송 물질, 발광 물질, 전자수송 물질, 전자주입 물질 등이 안정하고 효율적인 재료에 의하여 뒷받침되는 것이 선행되어야 하나, 아직까지 안정하고 효율적인 유기전기소자용 유기물층 재료의 개발이 충분히 이루어지지 않은 상태이며, 따라서 새로운 재료의 개발이 계속 요구되고 있다.In order to sufficiently exhibit the excellent characteristics of the organic electroluminescent device described above, a material constituting the organic material layer in the device, such as a hole injecting material, a hole transporting material, a light emitting material, an electron transporting material, and an electron injecting material is supported by a stable and efficient material However, stable and efficient development of an organic material layer for an organic electric device has not yet been sufficiently developed, and therefore development of a new material is continuously required.
본 발명은 소자의 높은 발광효율, 낮은 구동전압, 색순도, 및 수명을 향상시킬 수 있는 신규 화합물 및 이를 이용한 유기전기소자, 그 전자 장치를 제공하는 것을 목적으로 한다.It is an object of the present invention to provide a novel compound capable of improving the high luminous efficiency, low driving voltage, color purity, and service life of the device, and an organic electronic device using the novel compound and an electronic device thereof.
상기와 같은 본 발명의 목적을 달성하기 위하여, 본 발명은 2번 위치에 다이아릴아민기를 포함하는 치환기가 있는 카바졸 화합물을 제공하며, 이들은 정공주입 물질, 정공수송 물질, 전자주입 물질, 전자수송 물질, 발광물질 및/또는 패시베이션(케핑) 물질로 유용하며, 특히 단독으로 발광물질, 호스트, 도판트, 정공주입층 및 정공수송층으로 유용하다. In order to accomplish the object of the present invention as described above, the present invention provides a carbazole compound having a substituent group containing a diarylamine group at the 2-position thereof. These compounds include a hole injecting material, a hole transporting material, Emitting material and / or a passivation (keping) material, and is particularly useful alone as a light emitting material, a host, a dopant, a hole injecting layer, and a hole transporting layer.
구체적으로, 본 발명은 전술한 종래 기술의 문제점을 해결하고, 소자의 높은 발광효율, 낮은 구동전압, 색순도, 안정성 및 수명의 향상이라는 본 발명의 목적을 달성하기 위하여 하기 화학식 1로 표시되는 화합물을 제공한다. More particularly, the present invention relates to a compound represented by the following formula (1) for solving the above problems of the prior art and achieving the object of the present invention of improving the luminous efficiency, the driving voltage, the color purity, to provide.
상기 화학식 1에서,In Formula 1,
1) Ar 1 은 페닐; 바이페닐; 1-나프틸기; 2-나프틸기; C6~C60의 아릴기, C5~C20의 헤테로 고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 피리딘; C6~C60의 아릴기, C5~C20의 헤테로 고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 피리미딘; C6~C60의 아릴기, C5~C20의 헤테로 고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 트리아진이며; 1) Ar 1 Is phenyl; Biphenyl; A 1-naphthyl group; A 2-naphthyl group; An aryl group of C 6 to C 60 , and a heterocyclic group of C 5 to C 20 , which is unsubstituted or substituted with at least one substituent selected from the group consisting of Pyridine; A pyrimidine substituted with at least one substituent selected from the group consisting of an aryl group of C 6 to C 60 and a heterocyclic group of C 5 to C 20 ; An aryl group having 6 to 60 carbon atoms, a heterocyclic group having 5 to 20 carbon atoms, or a substituted or unsubstituted triazine group;
2) Ar 2 내지 Ar 4 는 각각 동일하거나 상이하며, 수소, 중수소, 할로겐, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C1~C20의 알콕시기, C1~C20의 알킬아민기, C1~C20 의 알킬티오펜기, C6~C20의 아릴티오펜기, C2~C20의 알케닐기, C2~C20의 알키닐기, C3~C20의 시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C8~C20의 아릴알케닐기, 실란기, 붕소기, 게르마늄기, C5~C20의 헤테로고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 C 6 ~C 60 의 아릴기; 수소, 중수소, 할로겐기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C8~C20의 아릴아민기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C8~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C5~C20의 헤테로 고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 1개 이상의 치환기로 치환 또는 비치환 되고 O, N, 및 S 중 적어도 하나를 갖는 치환 또는 비치환된 C 5 ~C 60 의 헤테로아릴기; 수소, 중수소, 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20 의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C3~C60의 헤테로아릴기로 이루어진 군으로부터 선택된 1개 이상의 치환기로 치환 또는 비치환된 C 1 ~C 30 의 알콕시기; 수소, 중수소, 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C3~C60의 헤테로아릴기로 이루어진 군으로 부터 선택된 1개 이상의 치환기로 치환 또는 비치환된 C 6 ~ C 30 아릴옥시기; 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, C3~C60의 헤테로아릴기로 이루어진 군으로부터 선택된 1개 이상의 치환기로 치환 또는 비치환된 C 6 ~C 60 의 아릴아민기; C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C6~C20의 아릴기, 중수소로 치환된 C2~C20의 아릴기, C8~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C5~C20의 헤테로 고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C 1 ~C 50 의 알킬기이다. 2) Ar 2 To Ar 4 are the same or different and represents hydrogen, deuterium, a halogen, an amino group, a nitrile group, a nitro group, C 1 ~ C 20 alkyl group, C 1 ~ C 20 alkoxy group, C 1 ~ C 20 of the alkyl amine group, alkyl thiophene group of C 1 ~ C 20, C 6 ~ C 20 aryl thiophene group, C 2 ~ C 20 alkenyl group, C 2 ~ C 20 of the alkynyl group, C 3 ~ C 20 cycloalkyl group, C of 6 ~ C 60 aryl group, a C 6 ~ C 20 substituted with a heavy hydrogen of the aryl group, a C 8 ~ C 20 arylalkenyl group, a silane group, a boron group, a germanium group, consisting of a heterocycle of the C 5 ~ C 20 of A C 6 -C 60 aryl group substituted or unsubstituted with one or more substituents selected from the group consisting of A halogen atom, a halogen atom, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 8 to C 20 arylamine group, a C 6 to C 60 aryl Membered heterocyclic group, a nitrile group, and an acetylene group, each of which is substituted with at least one substituent selected from the group consisting of a halogen atom, a C 6 to C 20 aryl group substituted with deuterium, a C 8 to C 20 arylalkyl group, a C 8 to C 20 arylalkenyl group, a C 5 to C 20 heterocyclic group, substituted with one or more substituents from the group or unsubstituted, and O, N, and optionally substituted with at least one of S or unsubstituted C 5 ~ C 60 heteroaryl group; A halogen atom, an amino group, a nitrile group, a nitro group, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 3 to C 30 cycloalkyl group, At least one substituent selected from the group consisting of a C 2 to C 30 heterocycloalkyl group, a C 6 to C 60 aryl group, a C 6 to C 20 aryl group substituted with deuterium, and a C 3 to C 60 heteroaryl group A substituted or unsubstituted C 1 to C 30 alkoxy group ; A halogen atom, an amino group, a nitrile group, a nitro group, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 3 to C 30 cycloalkyl group, At least one substituent selected from the group consisting of a C 2 to C 30 heterocycloalkyl group, a C 6 to C 60 aryl group, a C 6 to C 20 aryl group substituted with deuterium, and a C 3 to C 60 heteroaryl group substituted or unsubstituted C 6 ~ C 30 aryloxy group as; A halogen group, an amino group, a nitrile group, a nitro group, C 1 ~ C 20 alkyl group, C 2 ~ C 20 alkenyl group, C 1 ~ C 20 alkoxy group, C 3 ~ C 30 of the cycloalkyl group, C 2 ~ C heterocycloalkyl group, C 6 ~ C 60 aryl group, C 3 ~ C of the arylamine group with one or more substituents selected from the 60 heteroaryl group consisting of a substituted or unsubstituted C 6 ~ C 60 of 30; C alkyl group of 1 ~ C 20, C 2 ~ C 20 alkenyl group, C 1 ~ C 20 alkoxy group, C 6 ~ aryl group of C 20 aryl group, a C 2 ~ C 20 substituted with deuterium, C 8 of alkyl ~ C 20 aryl group, C 8 ~ C 20 aryl alkenyl group, C 5 ~ C 20 of the hetero ring group, nitrile group and acetylene group unsubstituted or substituted with a substituent selected from the group consisting of C 1 ~ C 50 to be.
Ar3 과 Ar4는 서로 인접한 기와 결합하여 포화 또는 불포화 지방족고리 또는 헤테로 고리를 형성할 수 있다. Ar 3 and Ar 4 may combine with adjacent groups to form a saturated or unsaturated aliphatic ring or a heterocyclic ring.
3) L은 니트로, 니트릴, 할로겐, C1~C20의 알킬기, C1~C20의 알콕시기 및 아미노기로 이루어진 군에서 선택되는 1개 이상의 치환기로 치환 또는 비치환된 C 6 ~C 60 의 아릴렌기; 니트로, 니트릴, 할로겐, C1~C20의 알킬기, C1~C20의 알콕시기 및 아미노기로 이루어진 군에서 선택되는 1개 이상의 치환기로 치환 또는 비치환된 C 5 ~C 60 의 헤테로 아릴렌기 ; 및 2가의 치환 또는 비치환된 지방족 탄화수소로부터 선택되는 기를 나타낸다.3) L is nitro, nitrile, a halogen, C 1 ~ C 20 alkyl group, C 1 ~ C 20 alkoxy group and by one or more substituents selected from the group consisting of amino group-substituted or unsubstituted C 6 ~ C 60 of An arylene group ; A heteroaryl group of nitro, nitrile, halogen, C 1 ~ C 20 alkyl group, C 1 ~ C 20 alkoxy group and by one or more substituents selected from the group consisting of amino group-substituted or unsubstituted C 5 ~ C 60 of; And Or a divalent substituted or unsubstituted aliphatic hydrocarbon .
더욱 구체적으로, 본 발명은 상기 화학식 1이 하기 화학식 2 내지 화학식 5와 같이 표시되는 구조인 화합물 중 어느 하나로 표시되는 화합물을 제공한다. 여기서 Ar1 내지 Ar4는 상기 화학식 1에서 정의된 것과 동일하다.More specifically, the present invention provides a compound represented by any one of the compounds represented by the general formulas (1) to (5). Wherein Ar 1 to Ar 4 are the same as defined in Formula 1 above.
또 다른 측면에서, 본 발명은 상기의 화학식으로 표시되는 화합물을 이용한 유기전기소자 및 이 유기전기소자를 포함하는 전자 장치를 제공한다.In another aspect, the present invention provides an organic electronic device using the compound represented by the above formula and an electronic device including the organic electronic device.
본 명세서에서 사용된 용어 "할로" 또는 "할로겐"은 다른 설명이 없는 한 불소, 염소, 브롬, 및 요오드를 포함한다. The term " halo " or " halogen ", as used herein, unless otherwise indicated, includes fluorine, chlorine, bromine, and iodine.
본 발명에 사용된 용어 "알킬" 또는 "알킬기"는 다른 설명이 없는 한 1 내지 60의 탄소수를 가지며, 여기에 제한되는 것은 아니다.The term " alkyl " or " alkyl group ", as used herein, unless otherwise specified, has from 1 to 60 carbon atoms, but is not limited thereto.
본 발명에 사용된 용어 "알케닐" 또는 "알키닐"은 다른 설명이 없는 한 각각 2 내지 60의 탄소수의 이중결합 또는 삼중결합을 가지며, 여기에 제한되는 것은 아니다.The term " alkenyl " or " alkynyl ", as used herein, unless otherwise indicated, each have a double bond or triple bond of from 2 to 60 carbon atoms,
본 발명에 사용된 용어 "시클로알킬"은 다른 설명이 없는 한 3 내지 60의 탄소수를 갖는 고리를 형성하는 알킬을 의미하며, 여기에 제한되는 것은 아니다.The term " cycloalkyl " as used herein, unless otherwise specified, means alkyl which forms a ring having from 3 to 60 carbon atoms, but is not limited thereto.
본 발명에 사용된 용어 "알콕시기"는 다른 설명이 없는 한 1 내지 60의 탄소수를 가지며, 여기에 제한되는 것은 아니다.The term " alkoxy group " as used in the present invention has, unless otherwise stated, 1 to 60 carbon atoms, but is not limited thereto.
본 발명에 사용된 용어 "아릴기" 및 "아릴렌기"는 다른 설명이 없는 한 각각 6 내지 60의 탄소수를 가지며, 이에 제한되는 것은 아니다. The terms " aryl group " and " arylene group ", as used herein, unless otherwise specified, each have 6 to 60 carbon atoms, but are not limited thereto.
본 명세서에서 사용된 용어 "헤테로알킬"은 다른 설명이 없는 한 하나 또는 그 이상의 헤테로원자를 갖는 알킬을 의미한다.The term " heteroalkyl ", as used herein, unless otherwise indicated, means alkyl having one or more heteroatoms.
본 발명에 사용된 용어 "헤테로아릴기" 또는 "헤테로아릴렌기"는 다른 설명이 없는 한 각각 하나 또는 그 이상의 헤테로원자를 갖는 탄소수 3 내지 60의 아릴기 또는 아릴렌기를 의미하며, 여기에 제한되는 것은 아니다. As used herein, the term " heteroaryl group " or " heteroarylene group " means an aryl or arylene group of 3 to 60 carbon atoms having one or more heteroatoms, respectively, It is not.
본 발명에 사용된 용어 "헤테로시클로알킬", "헤테로고리기"는 다른 설명이 없는 한 하나 또는 그 이상의 헤테로원자를 포함하고, 2 내지 60의 탄소수를 갖는다.The term " heterocycloalkyl ", " heterocyclic group ", as used herein, unless otherwise stated, includes one or more heteroatoms and has from 2 to 60 carbon atoms.
본 명세서에서 사용된 용어 "헤테로원자"는 다른 설명이 없는 한 N, O, S, P 및 Si를 의미한다. As used herein, the term " heteroatom " means N, O, S, P and Si, unless otherwise stated.
다른 설명이 없는 한, 본 발명에 사용된 용어 "지방족"은 탄소수 1 내지 60의 지방족 탄화수소를 의미하며, "지방족고리"는 탄소수 3 내지 60의 지방족 탄화수소 고리를 의미한다. Unless otherwise stated, the term " aliphatic " as used herein means an aliphatic hydrocarbon having 1 to 60 carbon atoms and an " aliphatic ring " means an aliphatic hydrocarbon ring having 3 to 60 carbon atoms.
전술한 헤테로화합물 이외의 그 밖의 다른 헤테로화합물 또는 헤테로라디칼은 하나 이상의 헤테로원자를 포함하며, 여기에 제한되는 것은 아니다. Other hetero-compounds or hetero-radicals other than the above-mentioned hetero-compounds include, but are not limited to, one or more heteroatoms.
또한 명시적인 설명이 없는 한, 본 발명에서 사용된 용어 "치환 또는 비치환된"에서 "치환"은 중수소, 할로겐, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C1~C20의 알콕시기, C1~C20의 알킬아민기, C1~C20의 알킬티오펜기, C6~C20의 아릴티오펜기, C2~C20의 알케닐기, C2~C20의 알키닐기, C3~C20의 시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C8~C20의 아릴알케닐기, 실란기, 붕소기, 게르마늄기, C5~C20의 헤테로고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환됨을 의미하며, 이들 치환기에 제한되는 것은 아니다. One also no explicit description, the terms in the "unsubstituted or substituted", "substituted" is heavy hydrogen, a halogen, an amino group, a nitrile group, a nitro group, C 1 ~ C 20 alkyl group, C 1 ~ C for use in the present invention alkoxy group, C 1 ~ C 20 alkyl amine group of 20, C 1 ~ C 20 alkyl thiophene group, C 6 ~ C 20 aryl thiophene group, C 2 ~ C 20 alkenyl group, C 2 ~ C 20 alkynyl group, C 3 ~ C 20 cycloalkyl group, C 6 ~ C 60 aryl group, of a C 6 ~ C 20 substituted by deuterium aryl group, a C 8 ~ C 20 arylalkenyl group, a silane group, a boron of Means a group substituted with at least one substituent selected from the group consisting of a halogen atom, a halogen atom, a germanium group, and a C 5 to C 20 heterocyclic group.
더욱 구체적으로, 상기 화학식 1 ~ 화학식 5로 표시되는 화합물은 아래 화합물 (P2-1) 내지 (P5-84) 중에서 선택되며, 이에 한정되는 것은 아니다.More specifically, the compounds represented by the above formulas (1) to (5) are selected from the following compounds (P2-1) to (P5-84), but are not limited thereto.
상기 화학식 1로 표시되는 화합물들은 상기 화학식 6에 제시된 화합물들 중 하나일 수 있으나 이에 제한되지 않는다. 이때 화학식 1로 표시되는 화합물들의 각 치환기들은 광범위한 관계로 모든 화합물들을 예시하는 것은 현실적으로 어려우므로 대표적인 화합물들을 예시적으로 설명한 것이나, 상기 화학식 6에 제시되지 않은 화학식 1로 표시되는 화합물들도 본 명세서의 일부를 구성할 수 있다. The compounds represented by Formula 1 may be one of the compounds shown in Formula 6, but are not limited thereto. Here, the substituents of the compounds represented by the formula (1) are exemplified as typical compounds since it is practically difficult to exemplify all the compounds in a wide range of relation. However, the compounds represented by the formula (1) You can configure some.
본 발명에 따르는 신규 화합물을 이용함으로써 소자의 높은 발광효율, 낮은 구동전압, 색순도, 및 수명을 크게 향상시킬 수 있는 효과를 나타낸다.By using the novel compounds according to the present invention, it is possible to remarkably improve the luminous efficiency, the driving voltage, the color purity, and the lifetime of the device.
도 1 내지 도 6은 본 발명의 화합물을 적용할 수 있는 유기전기발광소자의 예를 도시한 것이다.1 to 6 show examples of organic electroluminescent devices to which the compounds of the present invention can be applied.
상기 화학식을 가지는 본 발명에 따르는 화합물은 용액 공정(soluble process)에 사용될 수 있다. 다시 말해 상기 화합은 용액 공정에 의해 후술할 유기전기소자의 유기물층을 형성할 수 있다. 즉 상기 화합물을 유기물층으로 사용할 때 유기물층은 다양한 고분자 소재를 사용하여 증착법이 아닌 용액 공정 또는 솔벤트 프로세스(solvent process), 예컨대 스핀 코팅, 딥 코팅, 닥터 블레이딩, 스크린 프린팅, 잉크젯 프린팅 또는 열 전사법 등의 방법에 의하여 더 적은 수의 층으로 제조될 수 있다.The compounds according to the invention having the above formula can be used in a soluble process. In other words, the above-mentioned combination can form an organic layer of an organic electronic device to be described later by a solution process. That is, when the compound is used as an organic material layer, the organic material layer may be formed by a solution process or a solvent process such as spin coating, dip coating, doctor blading, screen printing, inkjet printing, Lt; RTI ID = 0.0 > a < / RTI > fewer layers.
이하에서 본 발명의 일부 실시예들을 예시적인 도면을 통해 상세하게 설명한다.Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings.
각 도면의 구성요소들에 참조부호를 부가함에 있어서, 동일한 구성요소들에 대해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 부호를 가지도록 하고 있음에 유의해야 한다. 또한, 본 발명을 설명함에 있어, 관련된 공지 구성 또는 기능에 대한 구체적인 설명이 본 발명의 요지를 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략한다.It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference symbols as possible even if they are shown in different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
또한, 본 발명의 구성 요소를 설명하는 데 있어서, 제 1, 제 2, A, B, (a),(b) 등의 용어를 사용할 수 있다. 이러한 용어는 그 구성 요소를 다른 구성 요소와 구별하기 위한 것일 뿐, 그 용어에 의해 해당 구성 요소의 본질이나 차례 또는 순서 등이 한정되지 않는다. 어떤 구성 요소가 다른 구성요소에 "연결", "결합" 또는 "접속"된다고 기재된 경우, 그 구성 요소는 그 다른 구성요소에 직접적으로 연결되거나 또는 접속될 수 있지만, 각 구성 요소 사이에 또 다른 구성 요소가 "연결", "결합" 또는 "접속"될 수도 있다고 이해되어야 할 것이다.In describing the components of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected to or connected to the other component, It should be understood that an element may be "connected," "coupled," or "connected."
실시예Example
이하에서 제조예 및 실험예를 통하여 본 발명을 더욱 상세하게 설명한다. 그러나, 이하의 제조예 및 실험예는 본 발명을 예시하기 위한 것이며, 본 발명의 범위가 이들에 의하여 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Production Examples and Experimental Examples. However, the following Preparation Examples and Experimental Examples are for illustrating the present invention, and the scope of the present invention is not limited thereto.
제조예Manufacturing example
이하에서 상기 화학식 1에 속하는 화합물들에 대한 제조예 또는 합성예를 설명한다. 다만, 화학식 1에 속하는 화합물들의 수가 많기 때문에 화학식 1에 속하는 화합물들 중 일부를 예시적으로 설명한다. 본 발명이 속하는 기술분야의 통상의 지식을 가진 자, 즉 당업자라면 하기에서 설명한 제조예들을 통해, 예시하지 않은 본 발명에 속하는 화합물을 제조할 수 있다.Hereinafter, preparation examples or synthesis examples of the compounds belonging to the formula 1 will be described. However, since the number of the compounds belonging to the formula (1) is large, some of the compounds belonging to the formula (1) will be exemplarily explained. Those skilled in the art, that is, those skilled in the art, can prepare the compounds belonging to the present invention which are not illustrated through the following production examples.
일반적 합성 방법General synthesis method
상기 화합물의 합성 방법은 하기와 같은 방법으로 수행하였다.The synthesis of the compound was carried out as follows.
Sub 1-1 합성법 예시 (2-Sub 1-1 Synthesis method Example (2- BromocarbazoleBromocarbazole ))
중간체 1 (4-Bromo-2-nitrobiphenyl)의 합성 Synthesis of Intermediate 1 (4-Bromo-2-nitrobiphenyl)
2L 둥근바닥플라스크에 toluene (500 mL), phenyl boronic acid (20 g, 164 mmol), 2,5-ibromonitrobenzene (46.2 g, 164.6 mmol), Pd(PPh3)4 (5.6 g, 5 mmol), 2M Na2CO3 수용액 (248 mL)을 넣는다. 그런 후에 90℃ 상태에서 6시간 가열 환류시킨다. 반응이 완료되면 상온에서 증류수를 넣어 희석시킨다. 그 후 메틸렌클로라이드와 물로 추출하고 유기층을 MgSO4로 건조하여 농축한 후 생성된 화합물을 silicagel column (메틸렌클로라이드 : 헥산=1:1)하여 38.4 g (84.2 %) 의 생성물을 얻었다.To a 2 L round bottom flask was added toluene (500 mL), phenyl boronic acid (20 g, 164 mmol), 2,5-ibromonitrobenzene (46.2 g, 164.6 mmol), Pd (PPh 3 ) 4 (5.6 g, Add Na 2 CO 3 aqueous solution (248 mL). Then, the mixture is heated under reflux at 90 DEG C for 6 hours. When the reaction is complete, dilute with distilled water at room temperature. The mixture was extracted with methylene chloride and water. The organic layer was dried over MgSO 4 and concentrated. The resulting compound was purified by silicagel column (methylene chloride: hexane = 1: 1) to obtain 38.4 g (84.2%) of product.
Sub 1-1 (2-Bromocarbazole)의 합성 Synthesis of Sub 1-1 (2-Bromocarbazole)
250 mL 둥근바닥플라스크에 4-Bromo-2-nitrobenzene (38.4 g, 138.08 mmol), triehtyl phosphate (168 mL, 966.56 mmol)을 넣고 160℃~165℃ 상태에서14시간 동안 가열 환류시킨다. 반응이 완료되면 감압증류로 남은 triehtyl phosphite을 제거하고, MeOH : H2O = 1:1 혼합용매로 희석시킨 후 생성된 고체를 여과한다. 얻어진 고체를 MeOH : H2O = 1:1 혼합용매와 petroleum ether로 씻어준다. 4-Bromo-2-nitrobenzene (38.4 g, 138.08 mmol) and triethylphosphate (168 mL, 966.56 mmol) were added to a 250 mL round bottom flask and the mixture was refluxed at 160 ° C to 165 ° C for 14 hours. After the reaction is completed, the remaining triethylphosphite is removed by distillation under reduced pressure, diluted with a mixed solvent of MeOH: H 2 O = 1: 1, and the resulting solid is filtered. The resulting solid is washed with a mixed solvent of MeOH: H 2 O = 1: 1 and petroleum ether.
상기 고체를 메틸렌클로라이드에 녹인 후에 MgSO4로 건조하여 농축하고 silicagel column 한다. (petroleum ether : methylene chloride = 2:1) 20.4 g (60 %)의 생성물을 얻는다. The solid is dissolved in methylene chloride, dried over MgSO 4 , concentrated and silicagel column. (60%) of the product (petroleum ether: methylene chloride = 2: 1).
Sub 1-2 합성법 예시 : Sub 1-2 Synthesis method Example: ArAr 1One = phenyl = phenyl 일때when (2- (2- BromoBromo -9-phenyl -9-phenyl carbazolecarbazole ))
2L 둥근바닥플라스크에 2-Bromocarbazole (18 g, 73.14 mmol), iodobenzene (29.85 g, 146.28 mmol), K2CO3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18-crown-6 (9.66 g, 36.57 mmol), o-dichlorobenzene (450 mL)을 넣고 24시간 동안 가열 환류시킨다. 반응이 완료되면 메틸렌클로라이드와 물로 추출하고 얻어진 유기층을 5% 염산, brine으로 씻어준다. 유기층을 MgSO4로 건조하여 농축한 후 화합물을 silicagel column (ethyl acetate : hexane =1:1)하여 16.5 g (70 %) 의 생성물을 얻었다. 2-Bromocarbazole (18 g, 73.14 mmol), iodobenzene (29.85 g, 146.28 mmol), K 2 CO 3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18- -6 (9.66 g, 36.57 mmol) and o-dichlorobenzene (450 mL), and the mixture was refluxed for 24 hours. After completion of the reaction, the reaction mixture is extracted with methylene chloride and water, and the obtained organic layer is washed with 5% hydrochloric acid and brine. The organic layer was dried over MgSO4 and concentrated. The residue was purified by silica gel column chromatography (ethyl acetate: hexane = 1: 1) to give 16.5 g (70%) of the product.
Sub 1-2 합성법 예시 : Ar 1 = Biphenyl 일때 (9-(biphenyl-4- yl )-2- bromo -9H- carbazole) Sub 1-2 illustrate the synthesis method: Ar = 1 when Biphenyl (9- (biphenyl-4- yl) -2- bromo -9H- carbazole)
2L 둥근바닥플라스크에 2-Bromocarbazole (18 g, 73.14 mmol), 4-iodobiphenyl (40.97 g, 146.28 mmol), K2CO3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18-crown-6 (9.66 g, 36.57 mmol), o-dichlorobenzene (450 mL)을 넣고 24시간 동안 가열 환류시킨다. 반응이 완료되면 메틸렌클로라이드와 물로 추출하고 얻어진 유기층을 5% 염산, brine으로 씻어준다. 유기층을 MgSO4로 건조하여 농축한 후 화합물을 silicagel column (ethyl acetate : hexane =1:1)하여 20.1 g (69%) 의 생성물을 얻었다. 2-Bromocarbazole (18 g, 73.14 mmol) in a 2L round bottom flask, 4-iodobiphenyl (40.97 g, 146.28 mmol), K 2 CO 3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18 -crown-6 (9.66 g, 36.57 mmol) and o-dichlorobenzene (450 mL), and the mixture is refluxed for 24 hours. After completion of the reaction, the reaction mixture is extracted with methylene chloride and water, and the obtained organic layer is washed with 5% hydrochloric acid and brine. The organic layer was dried over MgSO 4 and concentrated. The residue was purified by silica gel column chromatography (ethyl acetate: hexane = 1: 1) to give 20.1 g (69%) of the product.
Sub 1-2 합성법 예시 : Ar 1 = 1- naphtyl 일때 (2- bromo -9-( naphthalen -1- yl )- 9H-carbazole) Sub 1-2 synthesis example: Ar 1 = 1- naphtyl When (2- bromo -9- (naphthalen -1- yl ) - 9H-carbazole)
2L 둥근바닥플라스크에 2-Bromocarbazole (18 g, 73.14 mmol), 1-iodonaphthalene (37.17 g, 146.28 mmol), K2CO3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18-crown-6 (9.66 g, 36.57 mmol), o-dichlorobenzene (450 mL)을 넣고 24시간 동안 가열 환류시킨다. 반응이 완료되면 메틸렌클로라이드와 물로 추출하고 얻어진 유기층을 5% 염산, brine으로 씻어준다. 유기층을 MgSO4로 건조하여 농축한 후 화합물을 silicagel column (ethyl acetate : hexane =1:1)하여 19.33 g (71%) 의 생성물을 얻었다.2-Bromocarbazole (18 g, 73.14 mmol), 1-iodonaphthalene (37.17 g, 146.28 mmol), K 2 CO 3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol) -crown-6 (9.66 g, 36.57 mmol) and o-dichlorobenzene (450 mL), and the mixture is refluxed for 24 hours. After completion of the reaction, the reaction mixture is extracted with methylene chloride and water, and the obtained organic layer is washed with 5% hydrochloric acid and brine. The organic layer was dried over MgSO 4 and concentrated. The residue was purified by silica gel column chromatography (ethyl acetate: hexane = 1: 1) to give 19.33 g (71%) of product.
Sub 1-2 합성법 예시 : Ar 1 = 2- naphtyl 일때 (2- bromo -9-( naphthalen -2- yl )- 9H-carbazole) Sub 1-2 synthesis example: Ar 1 = 2- naphtyl When (2- bromo -9- (naphthalen -2- yl ) - 9H-carbazole)
2L 둥근바닥플라스크에 2-Bromocarbazole (18 g, 73.14 mmol), 2-iodonaphthalene (37.17 g, 146.28 mmol), K2CO3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18-crown-6 (9.66 g, 36.57 mmol), o-dichlorobenzene (450 mL)을 넣고 24시간 동안 가열 환류시킨다. 반응이 완료되면 메틸렌클로라이드와 물로 추출하고 얻어진 유기층을 5% 염산, brine으로 씻어준다. 유기층을 MgSO4로 건조하여 농축한 후 화합물을 silicagel column (ethyl acetate : hexane =1:1)하여 18.51 g (68%) 의 생성물을 얻었다.2-iodonaphthalene (37.17 g, 146.28 mmol), K 2 CO 3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18 -crown-6 (9.66 g, 36.57 mmol) and o-dichlorobenzene (450 mL), and the mixture is refluxed for 24 hours. After completion of the reaction, the reaction mixture is extracted with methylene chloride and water, and the obtained organic layer is washed with 5% hydrochloric acid and brine. The organic layer was dried over MgSO 4 and concentrated. The residue was purified by silica gel column chromatography (ethyl acetate: hexane = 1: 1) to obtain 18.51 g (68%) of product.
Sub 1-2 합성법 예시 : Ar 1 = Pyridine 일때 (2- bromo -9-( pyridin -2- yl )-9H- carbazole) Sub 1-2 illustrate the synthesis method: Ar = 1 when Pyridine (2- bromo -9- (pyridin -2- yl ) -9H- carbazole)
2L 둥근바닥플라스크에 2-Bromocarbazole (18 g, 73.14 mmol), 2-iodopyridine (30 g, 146.28 mmol), K2CO3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18-crown-6 (9.66 g, 36.57 mmol), o-dichlorobenzene (450 mL)을 넣고 24시간 동안 가열 환류시킨다. 반응이 완료되면 메틸렌클로라이드와 물로 추출하고 얻어진 유기층을 5% 염산, brine으로 씻어준다. 유기층을 MgSO4로 건조하여 농축한 후 화합물을 silicagel column (ethyl acetate : hexane =1:1)하여 15.36 g (65%) 의 생성물을 얻었다.2-bromocarbazole (18 g, 73.14 mmol), 2-iodopyridine (30 g, 146.28 mmol), K 2 CO 3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18 -crown-6 (9.66 g, 36.57 mmol) and o-dichlorobenzene (450 mL), and the mixture is refluxed for 24 hours. After completion of the reaction, the reaction mixture is extracted with methylene chloride and water, and the obtained organic layer is washed with 5% hydrochloric acid and brine. The organic layer was dried over MgSO 4 and concentrated. The residue was purified by silica gel column chromatography (ethyl acetate: hexane = 1: 1) to give 15.36 g (65%) of the product.
Sub 1-2 합성법 예시 : Ar 1 = Pyrimidine 일때 (2- bromo -9-( pyrimidin -5- yl )- 9H-carbazole) Sub 1-2 illustrate the synthesis method: Ar 1 = Pyrimidine when (2- bromo -9- (pyrimidin -5- yl ) - 9H-carbazole)
2L 둥근바닥플라스크에 2-Bromocarbazole (18 g, 73.14 mmol), 5-iodopyrimidine (30.13 g, 146.28 mmol), K2CO3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol), 18-crown-6 (9.66 g, 36.57 mmol), o-dichlorobenzene (450 mL)을 넣고 24시간 동안 가열 환류시킨다. 반응이 완료되면 메틸렌클로라이드와 물로 추출하고 얻어진 유기층을 5% 염산, brine으로 씻어준다. 유기층을 MgSO4로 건조하여 농축한 후 화합물을 silicagel column (ethyl acetate : hexane =1:1)하여 15.65 g (66%) 의 생성물을 얻었다2-Bromocarbazole (18 g, 73.14 mmol), 5-iodopyrimidine (30.13 g, 146.28 mmol), K 2 CO 3 (30.33 g, 219.42 mmol), Cu powder (4.65 g, 73.14 mmol) -crown-6 (9.66 g, 36.57 mmol) and o-dichlorobenzene (450 mL), and the mixture is refluxed for 24 hours. After completion of the reaction, the reaction mixture is extracted with methylene chloride and water, and the obtained organic layer is washed with 5% hydrochloric acid and brine. The organic layer was dried over MgSO 4 and concentrated. The obtained compound was purified by silicagel column (ethyl acetate: hexane = 1: 1) to obtain 15.65 g (66%) of the product
Sub 1-3 화합물Sub 1-3 compounds
Sub 1-3 합성법 예시 (Sub 1-3 synthesis example ( N,9N, 9 -- diphenyl피덴 -9H--9H- carbazolcarbazole -2-amine)-2-amine)
Aniline (4.34 g, 46.55 mmol)과 Sub 1-2 (16.5 g, 51.21 mmol)을 톨루엔 440mL에 혼합 후에 Pd2(dba)3 (1.28 g, 1.4 mmol), PPh3 (1.22 g, 4.7), NaOt-Bu (13.42 g, 140mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 11.68 g (75%) 얻었다. Pd 2 (dba) 3 (1.28 g, 1.4 mmol), PPh 3 (1.22 g, 4.7 mmol) and Na 2 O (0.45 g, t- Bu (13.42 g, 140 mmol) were added, respectively, and the mixture was refluxed with stirring at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 11.68 g (75%) of the product.
위와 같은 실험방법으로 Sub 1-3-1~1-3-25를 합성완료한 후 아래 표와 같이 FD-MS로 생성물을 확인하였다. Sub-1-3-1 ~ 1-3-25 were synthesized by the same method as above, and the product was confirmed by FD-MS as shown in the following table.
Sub 2-1 화합물Sub 2-1 Compound
Sub 2-1-1 합성법 예시 (Sub 2-1-1 Synthetic method example ( diphenylaminediphenylamine ))
Aniline (4.66 g, 50 mmol)과 Bromobenzene (8.64 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 6.26 g (74%) 얻었다. Pd 2 (dba) 3 (1.37 g, 1.5 mmol), PPh 3 (1.31 g, 5 mmol) and NaO t -butyl alcohol were added to a mixture of aniline (4.66 g, 50 mmol) and bromobenzene Bu (14.42 g, 150 mmol) was added thereto, and the mixture was refluxed with stirring at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 6.26 g (74%) of the product.
Sub 2-1-2 합성법 예시 (N-Sub 2-1-2 Synthetic method example (N- phenylnaphthalen페 phenylnaphthalen -1-amine)-1-amine)
Aniline (4.66 g, 50 mmol)과 1-bromonaphthalene (11.39 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 8.11 g (74%) 얻었다. Pd 2 (dba) 3 (1.37 g, 1.5 mmol), PPh 3 (1.31 g, 5 mmol), NaO 2 (diboronitrile) were added to a mixture of aniline (4.66 g, 50 mmol) and 1-bromonaphthalene t- Bu (14.42 g, 150 mmol), respectively, and the mixture is refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 8.11 g (74%) of the product.
Sub 2-1-3 합성법 예시 (Sub 2-1-3 Synthetic method example ( dinaphthalendinaphthalen -1--One- ylamineylamine ))
naphthalen-1-amine (7.16 g, 50 mmol)과 1-bromonaphthalene (11.39 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 9.7 g (72%) 얻었다. Pd 2 (dba) 3 (1.37 g, 1.5 mmol), PPh 3 (1.31 g, 5 mmol) was added to a mixture of 480 mL of toluene and then 1-bromonaphthalene (11.39 g, 55 mmol) mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 9.7 g (72%) of the product.
Sub 2-1-4 합성법 예시 (N-(Sub 2-1-4 Synthetic method example (N- ( naphthalennaphthalen -2--2- ylyl )) naphthalennaphthalen -1-amine)-1-amine)
naphthalen-1-amine (7.16 g, 50 mmol)과 2-bromonaphthalene (11.39 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 9.7 g (72%) 얻었다. Pd 2 (dba) 3 (1.37 g, 1.5 mmol) and PPh 3 (1.31 g, 5 mmol) were added to a mixture of 480 mL of toluene, followed by the addition of naphthalen-1-amine (7.16 g, 50 mmol) and 2-bromonaphthalene mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 9.7 g (72%) of the product.
Sub 2-1-5 합성법 예시 (Sub 2-1-5 Synthetic method example ( dinaphthalendinaphthalen -2--2- ylamineylamine ))
naphthalen-2-amine (7.16 g, 50 mmol)과 2-bromonaphthalene (11.39 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 9.56 g (71%) 얻었다.Pd 2 (dba) 3 (1.37 g, 1.5 mmol) and PPh 3 (1.31 g, 5 mmol) were added to a mixture of 480 mL of toluene, followed by the addition of naphthalen-2-amine (7.16 g, 50 mmol) and 2-bromonaphthalene mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 9.56 g (71%) of the product.
Sub 2-1-6 합성법 예시 (Sub 2-1-6 Synthetic method example ( dibiphenyl디ıbiphenyl -4--4- ylamineylamine ))
biphenyl-4-amine (8.46 g, 50 mmol)과 4-bromobiphenyl (12.82 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 12.05 g (75%) 얻었다.Pd 2 (dba) 3 (1.37 g, 1.5 mmol), PPh 3 (1.31 g, 5 mmol) was added to 480 mL of toluene after biphenyl-4-amine (8.46 g, 50 mmol) and 4-bromobiphenyl mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 12.05 g (75%) of the product.
Sub 2-1-7 합성법 예시 (N-(biphenyl-4- yl )-9,9- dimethyl -9H- fluoren -2- amine) Sub 2-1-7 illustrates synthesis (N- (biphenyl-4- yl) -9,9- dimethyl -9H- fluoren -2- amine)
biphenyl-4-amine (8.46 g, 50 mmol)과 2-bromo-9,9-dimethyl-9H-fluorene (15.02 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 12.65 g (70%) 얻었다.biphenyl-4-amine (8.46 g , 50 mmol) and 2-bromo-9,9-dimethyl- 9H-fluorene (15.02 g, 55 mmol) then the mixture in toluene 480mL Pd 2 (dba) 3 ( 1.37 g, 1.5 mmol), PPh 3 (1.31 g, 5 mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 12.65 g (70%) of the product.
Sub 2-1-8 합성법 예시 (N-(biphenyl-4- yl )-9,9- diphenyl -9H- fluoren -2- amine) Sub 2-1-8 illustrates synthesis (N- (biphenyl-4- yl) -9,9- diphenyl -9H- fluoren -2- amine)
biphenyl-4-amine (8.46 g, 50 mmol)과 2-bromo-9,9-diphenyl-9H-fluorene (21.85 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 16.51 g (68%) 얻었다.biphenyl-4-amine (8.46 g , 50 mmol) and 2-bromo-9,9-diphenyl- 9H-fluorene (21.85 g, 55 mmol) then the mixture in toluene 480mL Pd 2 (dba) 3 ( 1.37 g, 1.5 mmol), PPh 3 (1.31 g, 5 mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 16.51 g (68%) of the product.
Sub 2-1-9 합성법 예시 (N-Sub 2-1-9 Synthetic method example (N- (biphenyl-4-yl)dibenzo(biphenyl-4-yl) dibenzo [[ b,db, d ]] thiophenthiophen -2-amine)-2-amine)
biphenyl-4-amine (8.46 g, 50 mmol)과 3-bromodibenzo[b,d]thiophene (14.47 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 12.13 g (69%) 얻었다.(dba) 3 (1.37 g, 1.5 mmol), PPh (dibutylphosphine) palladium ( II ), and triethylamine were added to a mixture of 480 mL of toluene, followed by the addition of 3-bromodibenzo [b, d] thiophene (8.46 g, 3 (1.31 g, 5 mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 12.13 g (69%) of the product.
Sub 2-1-10 합성법 예시 (N-(biphenyl-4-Sub 2-1-10 Synthetic method example (N- (biphenyl-4- ylyl )) naphthalennaphthalen -2-amine)-2-amine)
biphenyl-4-amine (8.46 g, 50 mmol)과 2-bromonaphthalene (11.39 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 10.78 g (73%) 얻었다.Pd 2 (dba) 3 (1.37 g, 1.5 mmol) and PPh 3 (1.31 g, 5 mmol) were added to a mixture of 480 mL of biphenyl-4-amine (8.46 g, 50 mmol) and 2-bromonaphthalene mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 10.78 g (73%) of the product.
Sub 2-1-11 합성법 예시 (N-(4-(Sub 2-1-11 Synthetic method example (N- (4- ( naphthalennaphthalen -1--One- ylyl )phenyl)biphenyl-4-amine)) phenyl) biphenyl-4-amine)
biphenyl-4-amine (8.46 g, 50 mmol)과 1-(4-bromophenyl)naphthalene (15.57 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 13 g (70%) 얻었다.Pd 2 (dba) 3 (1.37 g, 1.5 mmol) and PPh 3 (1.5 mmol) were added to a mixture of 480 mL of toluene after adding biphenyl-4-amine (8.46 g, 50 mmol) and 1- (4- bromophenyl) naphthalene (1.31 g, 5 mmol) and NaO t- Bu (14.42 g, 150 mmol), respectively, and the mixture is refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 13 g (70%) of the product.
* Sub 2-1-12 합성법 예시 (N-(4- methoxyphenyl )biphenyl-4-amine) Sub 2-1-12 Synthesis Example (N- (4- methoxyphenyl ) biphenyl-4-amine)
biphenyl-4-amine (8.46 g, 50 mmol)과 1-bromo-4-methoxybenzene (10.29 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 10.33 g (75%) 얻었다.biphenyl-4-amine (8.46 g , 50 mmol) and 1-bromo-4-methoxybenzene ( 10.29 g, 55 mmol) the later mixed in toluene 480mL Pd 2 (dba) 3 ( 1.37 g, 1.5 mmol), PPh 3 ( 1.31 g, 5 mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 10.33 g (75%) of the product.
Sub 2-1-13 합성법 예시 (N-(4-Sub 2-1-13 Synthetic method example (N- (4- fluorophenylfluorophenyl )biphenyl-4-amine)) biphenyl-4-amine)
biphenyl-4-amine (8.46 g, 50 mmol)과 1-bromo-4-fluorobenzene (9.63 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 8.82 g (67%) 얻었다.biphenyl-4-amine (8.46 g , 50 mmol) and 1-bromo-4-fluorobenzene ( 9.63 g, 55 mmol) the later mixed in toluene 480mL Pd 2 (dba) 3 ( 1.37 g, 1.5 mmol), PPh 3 ( 1.31 g, 5 mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 8.82 g (67%) of the product.
Sub 2-1-14 합성법 예시 (N1-(biphenyl-4- yl )- N4,N4 - diphenylbenzene -1,4- diamine) Sub 2-1-14 Synthesis Example (N1- (biphenyl-4- yl ) -N4, N4 - diphenylbenzene- 1,4- diamine)
biphenyl-4-amine (8.46 g, 50 mmol)과 4-bromo-N,N-diphenylaniline (17.83 g, 55 mmol)을 톨루엔 480mL에 혼합 후에 Pd2(dba)3 (1.37 g, 1.5 mmol), PPh3 (1.31 g, 5 mmol), NaOt-Bu (14.42 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 14.64 g (71%) 얻었다.Pd 2 (dba) 3 (1.37 g, 1.5 mmol), PPh (dibenzylideneacetone) and diisopropylethylamine were added to a solution of 4-bromo-N, N-diphenylaniline (17.83 g, 55 mmol) 3 (1.31 g, 5 mmol) and NaO t- Bu (14.42 g, 150 mmol) were added, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 14.64 g (71%) of the product.
위와 같은 실험방법으로 Sub 2-1-1~2-1-14를 합성완료한 후 아래 표와 같이 FD-MS로 생성물을 확인하였다. Sub 2-1-1 ~ 2-1-14 were synthesized by the same method as above, and the product was confirmed by FD-MS as shown in the following table.
Sub 2-2 화합물 합성 예시Sub 2-2 Compound Synthesis Example
diphenylamine (6.77 g, 40 mmol)과 4,4'-dibromobiphenyl (13.73g, 44 mmol)을 톨루엔 385mL에 혼합 후에 Pd2(dba)3 (1.1 g, 1.2 mmol), PPh3 (1.05 g, 4 mmol), NaOt-Bu (11.53 g, 150mmol) 을 각각 첨가한 뒤, 100℃에서 24시간 교반 환류시킨다. ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 11.69 g (73%) 얻었다.Pd 2 (dba) 3 (1.1 g, 1.2 mmol) and PPh 3 (1.05 g, 4 mmol) were added to 385 mL of toluene after diphenylamine (6.77 g, 40 mmol) and 4,4'-dibromobiphenyl ) And NaO t- Bu (11.53 g, 150 mmol) were added, respectively, and the mixture was refluxed at 100 ° C for 24 hours. ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 11.69 g (73%) of the product.
Sub 2-2 ~ Sub 2-5 Sub 2-2 to Sub 2-5
Sub 2-2 ~ Sub 2-5 와 상기 Sub 2-1-1 ~ 2-1-14를 위와 같은 실험방법으로 합성완료한 후 아래와 같이 FD-MS로 생성물을 확인하였다.Sub 2-2 to Sub 2-5 and Sub 2-1-1 to 2-1-14 were synthesized in the same manner as described above, and the product was confirmed by FD-MS as follows.
Final Product 합성 예시Example of Final Product Synthesis
둥근바닥플라스크에 Sub1-3의 화합물 (1당량), Sub 2-2의 화합물 (1.2당량), Pd2(dba)3 (0.03 mmol), PPh3 (0.1당량), NaOt-Bu (3당량), toluene (10 mL / 1 mmol)을 넣은 후에 100 ℃에서 반응을 진행한다. 반응이 완료되면 ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻었다.(1 eq.), Sub 2-2 (1.2 eq.), Pd 2 (dba) 3 (0.03 mmol), PPh 3 (0.1 eq.), NaO t- Bu ) and toluene (10 mL / 1 mmol), and the reaction proceeds at 100 ° C. After the reaction was completed, the reaction mixture was extracted with ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallization.
P2-6 합성 예시Example of P2-6 synthesis
둥근바닥플라스크에 Sub 1-3-1의 화합물 (10.03 g, 30 mmol), Sub2-2-6의 화합물 (19.9 g, 36 mmol), Pd2(dba)3 (0.83 g, 0.9 mmol), PPh3 (0.8 g, 3 mmol), NaOt-Bu (8.65 g, 90 mmol), toluene 300 mL 를 넣은 후에 100 ℃에서 반응을 진행한다. 반응이 완료되면 ether와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축한 후 생성된 유기물을 silicagel column 및 재결정하여 생성물 16.44 g (68%)을 얻었다.Sub-1-3-1 (10.03 g, 30 mmol), Sub2-2-6 (19.9 g, 36 mmol), Pd 2 (dba) 3 (0.83 g, 0.9 mmol), PPh 3 (0.8 g, 3 mmol), NaO t- Bu (8.65 g, 90 mmol) and 300 mL of toluene. After the reaction was completed, the reaction mixture was extracted with ether and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain 16.44 g (68%) of the product.
위와 같은 실험방법으로 최종 생성물을 합성완료한 후 아래와 같이 FD-MS로 생성물을 확인하였다.After completion of the synthesis of the final product by the above-mentioned experimental method, the product was confirmed by FD-MS as follows.
한편, 화학식 1로 표시되는 화합물들의 각 치환기들은 광범위한 관계로, 대표적인 화합물들의 합성예를 예시적으로 설명하였으나, 합성예로 예시적으로 설명하지 않은 화학식 1로 표시되는 화합물들도 본 명세서의 일부를 구성할 수 있다.In the meantime, although each of the substituents of the compounds represented by the formula (1) is broadly related, examples of synthesis of representative compounds have been exemplarily described, but the compounds represented by the formula (1), which are not exemplarily shown in the synthesis examples, Can be configured.
또한, 상기와 같은 구조의 코어 구조에 다양한 치환기를 도입함으로써 도입된 치환기의 고유 특성을 갖는 화합물을 합성할 수 있다. 예컨대, 유기발광소자를 비롯한 유기전기소자의 제조시 사용되는 정공주입층 물질, 정공수송층 물질, 발광층 물질, 및 전자 수송층 물질에 사용되는 치환기를 상기 구조에 도입함으로써 각 유기물층에서 요구하는 조건들을 충족시키는 물질을 제조할 수 있다.Further, by introducing various substituents into the core structure having the above structure, it is possible to synthesize a compound having the intrinsic characteristics of the substituent introduced. For example, by introducing a substituent used in a hole injecting layer material, a hole transporting layer material, a light emitting layer material, and an electron transporting layer material used in the production of an organic electronic device including the organic light emitting device into the above structure, Materials can be prepared.
본 발명에 따른 화합물은 치환기의 종류 및 성질에 따라 유기전기발광소자에서 다양한 용도로 사용될 수 있다.The compounds according to the present invention can be used in various applications in organic electroluminescent devices depending on the kind and nature of substituent groups.
본 발명의 화합물은 코어와 치환체에 의해 조절이 자유롭기 때문에 인광 또는 형광 발광층의 호스트 이외의 다양한 층으로 작용할 수 있다.Since the compounds of the present invention are controllable by the core and the substituent, they can act as various layers other than phosphorescent or fluorescent light emitting host hosts.
본 발명의 유기전기소자는 전술한 화합물들을 이용하여 한층 이상의 유기물층을 형성하는 것을 제외하고는, 통상의 유기전기소자의 제조방법 및 재료에 의하여 제조될 수 있다.The organic electroluminescent device of the present invention can be manufactured by a conventional method and material for producing an organic electroluminescent device, except that the above-described compounds are used to form one or more organic substance layers.
본 발명의 화합물들을 유기전기발광소자의 다른 유기물층들, 예를 들어 발광 보조층, 전자주입층, 전자수송층, 및 정공주입층에 사용되더라도 동일한 효과를 얻을 수 있는 것은 자명하다.It is obvious that the same effects can be obtained even when the compounds of the present invention are used in other organic layers of an organic electroluminescent device, for example, a light-emission assisting layer, an electron injecting layer, an electron transporting layer, and a hole injecting layer.
한편 본 발명의 화합물은 용액 공정(soluble process)에 사용될 수 있다. 다시 말해 상기 화합물을 용액 공정(soluble process)에 의해 후술할 유기전기소자의 유기물층을 형성할 수 있다. 즉 상기 화합물을 유기물층으로 사용할 때 유기물층은 다양한 고분자 소재를 사용하여 증착법이 아닌 용액 공정 또는 솔벤트 프로세스(solvent process), 예컨대 스핀 코팅, 딥 코팅, 닥터 블레이딩, 스크린 프린팅, 잉크젯 프린팅 또는 열 전사법 등의 방법에 의하여 더 적은 수의 층으로 제조될 수 있다.Meanwhile, the compound of the present invention can be used in a soluble process. That is, the organic compound layer of the organic electronic device described later can be formed by a soluble process of the compound. That is, when the compound is used as an organic material layer, the organic material layer may be formed by a solution process or a solvent process such as spin coating, dip coating, doctor blading, screen printing, inkjet printing, Lt; RTI ID = 0.0 > a < / RTI > fewer layers.
본 발명의 화합물들이 사용될 수 있는 유기전기소자는 예를 들어, 유기전기발광소자(OLED), 유기태양전지, 유기감광체(OPC) 드럼, 유기트랜지스트(유기 TFT) 등이 있다.Organic electric devices in which the compounds of the present invention can be used include, for example, organic electroluminescent devices (OLED), organic solar cells, organic photoconductor (OPC) drums, organic transistors (organic TFT)
본 발명의 화합물들이 적용될 수 있는 유기전기소자 중 일예로 유기전기발광소자(OLED)에 대하여 설명하나, 본 발명은 이에 제한되지 않고 다양한 유기전기소자에 위에서 설명한 화합물들이 적용될 수 있다.The organic electroluminescent device (OLED) will be described as one example of organic electroluminescent devices to which the compounds of the present invention can be applied, but the present invention is not limited thereto and the above-described compounds may be applied to various organic electroluminescent devices.
본 발명의 다른 실시예는 제1 전극, 제2 전극 및 이들 전극 사이에 배치된 유기물층을 포함하는 유기전기소자에 있어서, 상기 유기물층 중 1층 이상이 본 발명의 화합물들을 포함하는 유기전기발광소자를 제공한다.According to another embodiment of the present invention, there is provided an organic electroluminescent device comprising a first electrode, a second electrode and an organic material layer disposed between the first electrode and the second electrode, wherein at least one of the organic material layers comprises the compound of the present invention to provide.
도 1 내지 도 6은 본 발명의 화합물을 적용할 수 있는 유기전기발광소자의 예를 도시한 것이다.1 to 6 show examples of organic electroluminescent devices to which the compounds of the present invention can be applied.
본 발명의 다른 실시예에 따른 유기전기발광소자는, 정공주입층, 정공수송층, 발광층, 전자수송층 및 전자주입층을 포함하는 유기물층 중 1층 이상을 본 발명의 화합물을 포함하도록 형성하는 것을 제외하고는, 당 기술 분야에 통상의 제조 방법 및 재료를 이용하여 당 기술 분야에 알려져 있는 구조로 제조될 수 있다.The organic electroluminescent device according to another embodiment of the present invention can be manufactured by the same method as the organic electroluminescent device except that at least one layer of the organic compound layer including the hole injecting layer, the hole transporting layer, the light emitting layer, the electron transporting layer, Can be made with a structure known in the art using conventional manufacturing methods and materials in the art.
본 발명에 다른 실시예에 따른 유기전기발광소자의 구조는 도 1 내지 6에 예시되어 있으나, 이들 구조에만 한정된 것은 아니다. 이때, 도면번호 101은 기판, 102는 양극, 103은 정공주입층(HIL), 104는 정공수송층(HTL), 105는 발광층(EML), 106은 전자주입층(EIL), 107은 전자수송층(ETL), 108은 음극을 나타낸다. The structure of an organic electroluminescent device according to another embodiment of the present invention is illustrated in FIGS. 1 to 6, but is not limited to these structures. Reference numeral 101 denotes a substrate, 102 denotes an anode, 103 denotes a hole injection layer (HIL), 104 denotes a hole transport layer (HTL), 105 denotes a light emitting layer (EML), 106 denotes an electron injection layer (EIL) ETL), and 108 denotes a cathode.
미도시하였지만, 이러한 유기전기발광소자는 정공의 이동을 저지하는 정공저지층(HBL), 전자의 이동을 저지하는 전자저지층(EBL), 발광을 돕거나 보조하는 발광보조층 및 보호층이 더 위치할 수도 있다. 보호층의 경우 최상위층에서 유기물층을 보호하거나 음극을 보호하도록 형성될 수 있다.The organic electroluminescent device has a hole blocking layer (HBL) for blocking the movement of holes, an electron blocking layer (EBL) for blocking the movement of electrons, a luminescent auxiliary layer for assisting or assisting luminescence and a protective layer It may be located. In the case of the protective layer, it may be formed to protect the organic layer at the uppermost layer or to protect the cathode.
이때, 본 발명의 화합물은 정공주입층, 정공수송층, 발광층 및 전자수송층을 포함하는 유기물층 중 하나 이상에 포함될 수 있다.At this time, the compound of the present invention may be included in at least one of organic compound layers including a hole injecting layer, a hole transporting layer, a light emitting layer, and an electron transporting layer.
구체적으로, 본 발명의 화합물은 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층, 정공저지층, 전자저지층, 발광보조층 및 보호층 중 하나 이상을 대신하여 사용되거나 이들과 함께 층을 형성하여 사용될 수도 있다. 물론 유기물층 중 한층에만 사용되는 것이 아니라 두층 이상에 사용될 수 있다.Specifically, the compound of the present invention may be used as a substitute for one or more of a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, an electron injecting layer, a hole blocking layer, May be used. Of course, it can be used for more than two layers, not only one layer of the organic material layer.
특히, 본 발명의 화합물에 따라서 정공주입 재료, 정공수송 재료, 전자주입 재료, 전자수송 재료, 발광 재료 및 패시베이션(케핑) 재료로 사용될 수 있고, 특히 단독으로 발광물질 및 호스트/도판트에서 호스트 또는 도판트로 사용될 수 있으며, 정공 주입, 정공수송층으로 사용될 수 있다.In particular, it can be used as a hole injecting material, a hole transporting material, an electron injecting material, an electron transporting material, a light emitting material and a passivation (keping) material according to the compound of the present invention, It can be used as a dopant, and can be used as a hole injecting and hole transporting layer.
예컨대, 본 발명의 다른 실시예에 따른 유기전기발광소자는 스퍼터링(sputtering)이나 전자빔 증발(e-beam evaporation)과 같은 PVD(physical vapor deposition) 방법을 이용하여, 기판 상에 금속 또는 전도성을 가지는 금속 산화물 또는 이들의 합금을 증착시켜 양극을 형성하고, 그 위에 정공주입층, 정공수송층, 발광층, 전자수송층 및 전자주입층을 포함하는 유기물층을 형성한 후, 그 위에 음극으로 사용할 수 있는 물질을 증착시킴으로써 제조될 수 있다.For example, the organic electroluminescent device according to another embodiment of the present invention may be formed by using a physical vapor deposition (PVD) method such as sputtering or e-beam evaporation, Oxide or an alloy thereof to form an anode, forming an organic material layer including a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer and an electron injecting layer on the anode, depositing a material usable as a cathode thereon .
이와 같은 방법 외에도, 기판 상에 음극 물질부터 유기물층, 양극 물질을 차례로 증착시켜 유기전기소자를 만들 수도 있다. 상기 유기물층은 정공주입층, 정공수송층, 발광층, 전자수송층 및 전자주입층 등을 포함하는 다층 구조일 수도 있으나, 이에 한정되지 않고 단층 구조일 수 있다. In addition to such a method, the organic material may be formed by sequentially depositing a negative electrode material, an organic material layer, and a positive electrode material on a substrate. The organic material layer may have a multi-layer structure including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer, but is not limited thereto and may have a single layer structure.
또한, 상기 유기물층은 다양한 고분자 소재를 사용하여 증착법이 아닌 용액 공정 또는 솔벤트 프로세스(solvent process), 예컨대 스핀 코팅, 딥 코팅, 닥터 블레이딩, 스크린 프린팅, 잉크젯 프린팅 또는 열 전사법 등의 방법에 의하여 더 적은 수의 층으로 제조할 수 있다.In addition, the organic material layer may be formed by using a variety of polymer materials, not by vapor deposition, but by a solution process or a solvent process such as spin coating, dip coating, doctor blading, screen printing, inkjet printing, It can be manufactured in a small number of layers.
본 발명의 다른 실시예에 따른 유기전기발광소자는 위에서 설명한 화합물을 스핀 코팅(spin coating)이나 잉크젯(ink jet) 공정과 같은 용액 공정(soluble process)에 사용될 수도 있다.The organic electroluminescent device according to another embodiment of the present invention may be used in a soluble process such as a spin coating process or an ink jet process.
기판은 유기전기발광소자의 지지체이며, 실리콘 웨이퍼, 석영 또는 유리판, 금속판, 플라스틱 필름이나 시트 등이 사용될 수 있다.The substrate may be a silicon wafer, a quartz or glass plate, a metal plate, a plastic film, or a sheet.
기판 위에는 양극이 위치된다. 이러한 양극은 그 위에 위치되는 정공주입층으로 정공을 주입한다. 양극 물질로는 통상 유기물층으로 정공주입이 원활할 수 있도록 일함수가 큰 물질일 수 있다. 본 발명에서 사용될 수 있는 양극 물질의 구체적인 예로는 바나듐, 크롬, 구리, 아연, 금과 같은 금속 또는 이들의 합금; 아연산화물, 인듐산화물, 인듐주석 산화물(ITO), 인듐아연산화물(IZO)과 같은 금속 산화물; ZnO:Al 또는 SnO2:Sb와 같은 금속과 산화물의 조합; 폴리(3-메틸티오펜), 폴리[3,4-(에틸렌-1,2-디옥시)티오펜](PEDT), 폴리피롤 및 폴리아닐린과 같은 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다.An anode is placed on the substrate. Such an anode injects holes into the hole injection layer located thereon. The anode material may be a material having a large work function so that hole injection can be smoothly conducted into the organic material layer. Specific examples of the cathode material that can be used in the present invention include metals such as vanadium, chromium, copper, zinc, and gold, or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); A combination of a metal and an oxide such as ZnO: Al or SnO2: Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDT), polypyrrole and polyaniline.
양극 위에는 정공주입층이 위치된다. 이러한 정공주입층의 물질로 요구되는 조건은 양극으로부터의 정공주입 효율이 높으며, 주입된 정공을 효율적으로 수송할 수 있어야 한다. 이를 위해서는 이온화 포텐셜이 작고 가시광선에 대한 투명성이 높으며, 정공에 대한 안정성이 우수해야 한다.A hole injection layer is located on the anode. The conditions required for the material of the hole injection layer are that the hole injection efficiency from the anode is high and the injected holes must be efficiently transported. For this purpose, the ionization potential is small, the transparency to visible light is high, and the stability against holes is excellent.
정공주입 물질로는 낮은 전압에서 양극으로부터 정공을 잘 주입받을 수 있는 물질로서, 정공주입 물질의 HOMO(highest occupied molecular orbital)가 양극 물질의 일함수와 주변 유기물층의 HOMO 사이일 수 있다. 정공주입 물질의 구체적인 예로는 금속 포피린(porphyrine), 올리고티오펜, 아릴아민 계열의 유기물, 헥사니트릴 헥사아자트리페닐렌, 퀴나크리돈(quinacridone) 계열의 유기물, 페릴렌(perylene) 계열의 유기물, 안트라퀴논 및 폴리아닐린과 폴리티오펜 계열의 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다.As the hole injecting material, a hole can be injected from the anode at a low voltage. The highest occupied molecular orbital (HOMO) of the hole injecting material may be between the work function of the anode material and the HOMO of the surrounding organic layer. Specific examples of the hole injecting material include metal porphyrine, oligothiophene, arylamine-based organic materials, hexanitrile hexaazatriphenylene, quinacridone-based organic materials, perylene-based organic materials, Anthraquinone, polyaniline and a polythiophene-based conductive polymer, but are not limited thereto.
상기 정공주입층 위에는 정공수송층이 위치된다. 이러한 정공수송층은 정공주입층으로부터 정공을 전달받아 그 위에 위치되는 유기발광층으로 수송하는 역할을 하며, 높은 정공 이동도와 정공에 대한 안정성 및 전자를 막아주는 역할를 한다. 이러한 일반적 요구 이외에 차체 표시용으로 응용할 경우 소자에 대한 내열성이 요구되며, 유리 전이 온도(Tg)가 70 ℃ 이상의 값을 갖는 재료일 수 있다.A hole transport layer is disposed on the hole injection layer. The hole transport layer transports holes from the hole injection layer to an organic light emitting layer disposed thereon, and has high hole mobility, stability to holes, and electrons. In addition to these general requirements, heat resistance to a device is required when it is applied for vehicle display, and it may be a material having a glass transition temperature (Tg) of 70 DEG C or more.
이와 같은 조건을 만족하는 물질들로는 NPD(혹은 NPB라 함), 스피로-아릴아민계화합물, 페릴렌-아릴아민계화합물, 아자시클로헵타트리엔화합물, 비스(디페닐비닐페닐)안트라센, 실리콘게르마늄옥사이드화합물, 실리콘계아릴아민화합물 등이 될 수 있다.Materials satisfying such conditions include NPD (or NPB), spiro-arylamine compounds, perylene-arylamine compounds, azacycloheptatriene compounds, bis (diphenylvinylphenyl) anthracene, silicon germanium oxide Compounds, silicone-based arylamine compounds, and the like.
정공수송층 위에는 유기발광층이 위치된다. 이러한 유기발광층는 양극과 음극으로부터 각각 주입된 정공과 전자가 재결합하여 발광을 하는 층이며, 양자효율이 높은 물질로 이루어져 있다. 발광 물질로는 정공수송층과 전자수송층으로부터 정공과 전자를 각각 수송받아 결합시킴으로써 가시광선 영역의 빛을 낼 수 있는 물질로서, 형광이나 인광에 대한 양자효율이 좋은 물질일 수 있다.An organic light emitting layer is disposed on the hole transporting layer. The organic light emitting layer is a layer in which holes and electrons injected from the anode and the cathode respectively recombine to emit light, and the organic light emitting layer is made of a material having high quantum efficiency. The light emitting material may be a material capable of emitting light in the visible light region by transporting and receiving holes and electrons from the hole transporting layer and the electron transporting layer, respectively, and may be a material having good quantum efficiency for fluorescence or phosphorescence.
이와 같은 조건을 만족하는 물질 또는 화합물로는 녹색의 경우 Alq3가, 청색의 경우 Balq(8-hydroxyquinoline beryllium salt), DPVBi(4,4'-bis(2,2-diphenylethenyl)-1,1'-biphenyl) 계열, 스피로(Spiro) 물질, 스피로-DPVBi(Spiro-4,4'-bis(2,2-diphenylethenyl)-1,1'-biphenyl), LiPBO(2-(2-benzoxazoyl)-phenollithium salt), 비스(디페닐비닐페닐비닐)벤젠, 알루미늄-퀴놀린 금속착체, 이미다졸, 티아졸 및 옥사졸의 금속착체 등이 있으며, 청색 발광 효율을 높이기 위해 페릴렌, 및 BczVBi(3,3'[(1,1'-biphenyl)-4,4'-diyldi-2,1-ethenediyl]bis(9-ethyl)-9H-carbazole; DSA(distrylamine)류)를 소량 도핑하여 사용할 수 있다. 적색의 경우는 녹색 발광 물질에 DCJTB([2-(1,1-dimethylethyl)-6-[2-(2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H-benzo(ij)quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene]-propanedinitrile)와 같은 물질을 소량 도핑하여 사용할 수 있다. Materials or compounds that satisfy these conditions include Alq3 in the case of green, Balq (8-hydroxyquinoline beryllium salt) in the case of blue, DPVBi (4,4'-bis (2,2-diphenylethenyl) biphenyl series, Spiro material, Spiro-4,4'-bis (2,2-diphenylethenyl) -1,1'-biphenyl), LiPBO (2- (2-benzoxazoyl) -phenolithium salt ), Bis (diphenylvinylphenylvinyl) benzene, aluminum-quinoline metal complexes, imidazoles, thiazole and oxazole metal complexes, and perylene and BczVBi (3,3 ' (1,1'-biphenyl) -4,4'-diyldi-2,1-ethenediyl] bis (9-ethyl) -9H-carbazole; DSA (distrylamine). In the case of red, the green luminescent material was doped with DCJTB ([2- (1,1-dimethylethyl) -6- [2- (2,3,6,7-tetrahydro-1,1,7,7-tetramethyl- -benzo (ij) quinolizin-9-yl) ethenyl] -4H-pyran-4-ylidene] -propanedinitrile).
잉크젯프린팅, 롤코팅, 스핀코팅 등의 공정을 사용하여 발광층을 형성할 경우에, 폴리페닐렌비닐렌(PPV) 계통의 고분자나 폴리 플루오렌(poly fluorene) 등의 고분자를 유기발광층에 사용할 수 있다.Polymers such as a polyphenylene vinylene (PPV) -based polymer and polyfluorene may be used for the organic light emitting layer when the light emitting layer is formed using processes such as inkjet printing, roll coating and spin coating .
유기발광층 위에는 전자수송층이 위치된다. 이러한 전자수송층은 그 위에 위치되는 음극으로부터 전자주입 효율이 높고 주입된 전자를 효율적으로 수송할 수 있는 물질이 필요하다. 이를 위해서는 전자 친화력과 전자 이동속도가 크고 전자에 대한 안정성이 우수한 물질로 이루어져야 한다. An electron transporting layer is disposed on the organic light emitting layer. Such an electron transporting layer requires a material capable of efficiently injecting electrons with a high electron injection efficiency from a cathode disposed thereon. For this purpose, it is required to be made of a material having high electron affinity, high electron transfer rate and excellent stability against electrons.
이와 같은 조건을 충족시키는 전자수송 물질로는 구체적인 예로 8-히드록시퀴놀린의 Al 착물; Alq3를 포함한 착물; 유기 라디칼 화합물; 히드록시플라본-금속 착물 등이 있으나, 이들에만 한정되는 것은 아니다.Specific examples of the electron transporting material satisfying such conditions include an Al complex of 8-hydroxyquinoline; Complexes containing Alq3; Organic radical compounds; Hydroxyflavone-metal complexes, and the like, but are not limited thereto.
전자수송층 위에는 전자주입층이 적층된다. 전자주입층은 Balq, Alq3,Be(bq)2, Zn(BTZ)2, Zn(phq)2, PBD, spiro-PBD, TPBI, Tf-6P 등과 같은 금속착제화합물, imidazole ring 을 갖는 aromatic 화합물이나 boron화합물 등을 포함하는 저분자 물질을 이용하여 제작할 수 있다. 이때, 전자주입층은 100Å ~ 300Å의 두께 범위에서 형성될 수 있다.An electron injection layer is deposited on the electron transport layer. The electron injection layer may be a metal complex compound such as Balq, Alq3, Be (bq) 2, Zn (BTZ) 2, Zn (phq) 2, PBD, spiro-PBD, TPBI or Tf-6P, boron compounds, and the like. At this time, the electron injection layer may be formed in a thickness range of 100 ANGSTROM to 300 ANGSTROM.
전자주입층 위에는 음극이 위치된다. 이러한 음극은 전자를 주입하는 역할을 한다. 음극으로 사용하는 재료는 양극에 사용된 재료를 이용하는 것이 가능하며, 효율적인 전자주입을 위해서는 일 함수가 낮은 금속일 수 있다. 특히 주석, 마그네슘, 인듐, 칼슘, 나트륨, 리튬, 알루미늄, 은 등의 적당한 금속, 또는 그들의 적절한 합금이 사용될 수 있다. 또한 100 ㎛ 이하 두께의 리튬플루오라이드와 알루미늄, 산화리튬과 알루미늄, 스트론튬산화물과 알루미늄 등의 2 층 구조의 전극도 사용될 수 있다.On the electron injection layer, a cathode is positioned. These cathodes serve to inject electrons. The material used for the cathode may be the material used for the anode and may be a metal having a low work function for efficient electron injection. Particularly suitable metals such as tin, magnesium, indium, calcium, sodium, lithium, aluminum, silver, or their alloys may be used. Also, an electrode having a two-layer structure such as lithium fluoride and aluminum, lithium oxide and aluminum, strontium oxide and aluminum, etc., having a thickness of 100 μm or less may be used.
전술하였듯이, 본 발명의 화합물에 따라서 적색, 녹색, 청색, 흰색 등의 모든 칼라의 형광과 인광소자에 적합한 정공주입 재료, 정공수송 재료, 발광 재료, 전자수송 재료 및 전자주입 재료로 사용할 수 있으며, 다양한 색의 호스트 또는 도판트 물질로 사용될 수 있다.As described above, the compound of the present invention can be used as a hole injecting material, a hole transporting material, a light emitting material, an electron transporting material, and an electron injecting material, which are suitable for the fluorescence of all colors such as red, green, It can be used as a host or dopant material of various colors.
본 발명에 따른 유기전기발광소자는 사용되는 재료에 따라 전면 발광형, 후면 발광형 또는 양면 발광형일 수 있다.The organic electroluminescent device according to the present invention may be of a top emission type, a back emission type, or a both-sided emission type, depending on the material used.
한편 본 발명은, 위에서 설명한 유기전기소자를 포함하는 디스플레이장치와, 이 디스플레이장치를 구동하는 제어부를 포함하는 단말을 포함한다. 이 단말은 현재 또는 장래의 유무선 통신단말을 의미한다. 이상에서 전술한 본 발명에 따른 단말은 휴대폰 등의 이동 통신 단말기일 수 있으며, PDA, 전자사전, PMP, 리모콘, 네비게이션, 게임기, 각종 TV, 각종 컴퓨터 등 모든 단말을 포함한다.Meanwhile, the present invention includes a display device including the above-described organic electronic device and a terminal including a control unit for driving the display device. This terminal means a current or future wired or wireless communication terminal. The terminal according to the present invention may be a mobile communication terminal such as a mobile phone and includes all terminals such as a PDA, an electronic dictionary, a PMP, a remote controller, a navigation device, a game machine, various TVs, and various computers.
유기전기소자의 제조평가Evaluation of manufacturing of organic electric device
비교실험 Comparative experiment 예 1Example 1
합성을 통해 얻은 여러 화합물을 각각 발광층의 발광 호스트 물질이나 정공 수송층으로 사용하여 통상적인 방법에 따라 유기전기 발광소자를 제작하였다. 먼저, 유기 기판에 형성된 ITO층(양극)위에 우선 정공주입층으로서 2-TNATA 막을 진공증착하여 10nm 두께로 형성하였다. 이어서 상기 발명화합물(화학식1~화학식5) 및 비교예를 정공 수송층을으로 20nm 두께로 진공 증착 하였다. 진공 증착하여 비교 실험을 진행 하였다. 이후, BD-052X(Idemitsu사)를 발광 도펀트로 사용하고 호스트 물질은9, 10-다이-(나프탈렌-2-안트라센)=AND]을 사용하였으며, 도핑 농도는 4%로 고정하여 비교 실험을 진행 하였다. 이어서 전자주입층으로 트리스(8-퀴놀리놀)알루미늄을 40 nm 의두께로 성막하였다. 이 후, 할로겐화 알킬리 금속인 LiF를 0.2 nm의 두께로 증착하고, 이어서 Al을 150 nm의 두께로 증착하여 이 Al/LiF를 음극으로 사용함으로서 유기전기 발광소자를 제조하였다. Organic electroluminescent devices were fabricated according to a conventional method by using various compounds obtained through synthesis as a luminescent host material or a hole transport layer of a luminescent layer. First, a 2-TNATA film was vacuum-deposited on the ITO layer (anode) formed on the organic substrate as a hole injection layer to form a 10 nm thick film. Subsequently, the inventive compounds (Formula 1 to Formula 5) and Comparative Example were vacuum-deposited to a thickness of 20 nm using a hole transport layer. Vacuum deposition was carried out for comparative experiments. Thereafter, BD-052X (Idemitsu) was used as a luminescent dopant and 9,10-di- (naphthalene-2-anthracene) = AND] was used as a host material. The doping concentration was fixed at 4% Respectively. Subsequently, tris (8-quinolinol) aluminum was deposited to a thickness of 40 nm as an electron injecting layer. Thereafter, LiF as a halogenated alkyl metal was deposited to a thickness of 0.2 nm, Al was deposited to a thickness of 150 nm, and the Al / LiF was used as a cathode. Thus, an organic electroluminescent device was manufactured.
본 발명 화합물의 비교를 위해, 본 발명의 화합물 대신에 하기식으로 표시되는 화합물(이하 NPB로 약기함)과 카바졸의 치환기가 연결되어지는 위치에 효과를 확인하기 위해 비교 예 (2), (3)을 정공 수송층 물질로 사용하여 시험 예와 동일한 구조의 유기전기발광소자를 제작하였다.For the purpose of comparison of the compounds of the present invention, in order to confirm the effect of substituting the substituent of the carbazole with the compound represented by the following formula (hereinafter abbreviated as NPB) instead of the compound of the present invention, 3) was used as a hole transporting layer material to fabricate an organic electroluminescent device having the same structure as that of the test example.
본 발명 화합물의 비교를 위해, 본 발명의 화합물 대신에 하기식으로 표시되는 화합물(이하 NPB로 약기함)과 카바졸의 치환기가 연결되어지는 위치에 효과를 확인하기 위해 비교 예 (2), (3)을 정공 수송층 물질로 사용하여 시험 예와 동일한 구조의 유기전기발광소자를 제작하였다For the purpose of comparison of the compounds of the present invention, in order to confirm the effect of substituting the substituent of the carbazole with the compound represented by the following formula (hereinafter abbreviated as NPB) instead of the compound of the present invention, 3) was used as a hole transporting layer material to fabricate an organic electroluminescent device having the same structure as in the test example
상기 표-6에서 비교예 화합물 (1) 인 NPB와 Carbazole의 3번 위치에 다이아릴아민기가 연결 되어진 비교예 화합물 (2), 비교예 화합물 (3)을 발명화합물인 P2-1~P5-84 와 같이 비교한 결과 비교예(1) 보다 낮은 구동전압과 효율이 월등하게 좋아지는 것을 확인 할 수 있었으며, 카바졸의 3번 위치에 다이아릴아민기로 치환된 비교예(2), 비교예(3)과 실시예 6, 실시예 7번과 비교하여 본 결과 NPB 와 동일하게 낮은 구동전압과 효율이 좋아지는 것을 확인 할 수 있었다. Comparative Example Compound (2) and Comparative Example Compound (3) in which a diarylamine group is connected at the 3-position of NPB and Carbazole of Comparative Example Compound (1) are shown in Table 6 as the inventive compounds P2-1 to P5-84 (2) and Comparative Example (3) in which carbazole was substituted with a diarylamine group at the 3-position of the carbazole, and Comparative Example (3) And Example 6 and Example 7. As a result, it was confirmed that the driving voltage and efficiency are improved as in the case of NPB.
따라서 구동전압이 낮아지면서 높은효율과 장수명을 가지게 되는것으로 판단되며, 최근 OLEDAccordingly, it is considered that the driving voltage is lowered and thus the OLED has high efficiency and long life. In recent years,
소자에서 문제시 되는 높은 구동전압으로 인한 단수명의 문제점을 해결할 것으로 본다.It is expected to solve the problem of the number of problems due to the high driving voltage which is a problem in the device.
비교실험 예 2Comparative Experimental Example 2
합성을 통해 얻은 화합물을 발광층의 발광 호스트 물질로 사용하여 통상적인 방법에 따라 유기전기 발광소자를 제작하였다. 먼저, 유리 기판에 형성된 ITO층(양극) 위에 우선 정공 주입층으로서 구리프탈로사이아닌(이하 CuPc로 약기함)막을 진공증착하여 10 nm 두께로 형성하였다. 이어서, 이 막 상에 정공수송 화합물로서 4,4-비스[N-(1-나프틸)-N-페닐아미노]비페닐 (이하 -NPD로 약기함)을 30 nm 두께로 진공 증착 하여 정공수송층을 형성하였다. 정공수송층을 형성한 후, 상부에 개발한 화합물을 인광 호스트 재료로서 증착하여 발광층을 성막한 후, 인광 발광성의 Ir 금속 착체 도펀트로서 트리스(2-페닐피리딘)이리듐(이하 Ir(ppy)3로 약기함)을 첨가하였다. 이때 발광층 중에 있어서의 Ir(ppy)3의 농도는 5중량%로 하였다. 정공 저지층으로 (1,1'-비스페닐)-4-올레이토)비스(2-메틸-8-퀴놀린올레이토)알루미늄(이하 BAlq로 약기함)을 10 nm 두께로 진공증착하고, 전자주입층으로 트리스(8-퀴놀리놀)알루미늄(이하 Alq3로 약칭함)을 40 nm 두께로 성막하였다. 이후, 할로젠화 알칼리 금속인 LiF를 0.2 nm 두께로 증착하고, 이어서 Al을 150 nm의 두께로 증착하여 이 Al/LiF를 음극으로 사용함으로써 유기전기발광소자를 제조하였다.An organic electroluminescent device was fabricated by a conventional method using a compound obtained through synthesis as a luminescent host material in a light emitting layer. First, a film of copper phthalocyanine (hereinafter referred to as CuPc) was vacuum deposited on the ITO layer (anode) formed on a glass substrate to form a hole injection layer having a thickness of 10 nm. Subsequently, 4,4-bis [ N - (1-naphthyl) -N -phenylamino] biphenyl (hereinafter abbreviated as -NPD) was vapor-deposited as a hole transport compound on the film to a thickness of 30 nm to form a hole transport layer . (2-phenylpyridine) iridium (hereinafter referred to as " Ir (ppy) 3 ") as a phosphorescent Ir metal complex dopant was formed by depositing the above-described compound as a phosphorescent host material to form a hole transport layer, Flask). At this time, the concentration of Ir (ppy) 3 in the light emitting layer was 5 wt%. (2-methyl-8-quinolinolato) aluminum (hereinafter abbreviated as BAlq) was vacuum-deposited to a thickness of 10 nm as a hole blocking layer, and electron injection Tris (8-quinolinol) aluminum (hereinafter abbreviated as Alq 3 ) was deposited to a thickness of 40 nm. Then, an organic electroluminescence device was prepared by depositing LiF, which is an alkali metal halide, to a thickness of 0.2 nm, followed by depositing Al to a thickness of 150 nm and using this Al / LiF as a cathode.
본 발명 화합물의 비교를 위해, 본 발명의 화합물 대신에 하기식으로 표시되는 비교예 (4) 화합물(이하 CBP로 약기함)과 카바졸의 N에 연결되어진 치환기 효과를 확인하기 위해 비교 예 (5), (6), (7), (8)를 발광 호스트 물질로 사용하여 시험 예와 동일한 구조의 유기전기발광소자를 제작하였다For comparison of the compound of the present invention, in order to confirm the substituent effect of the compound of Comparative Example (4) (hereinafter abbreviated as CBP) represented by the following formula instead of the compound of the present invention and N of carbazole, ), (6), (7), and (8) were used as a light emitting host material to fabricate an organic electroluminescent device having the same structure as in the test example
상기 표-7은 본 발명품을 인광 호스트로 사용한 것으로 비교예 (4)와 발광효율 및 색순도를 비교하고, 또한 카바졸에 치환기가 연결될 때 위치에 따른 발광효율의 차이점을 비교하기 위해 실시하였다. 상기 표-7의 결과를 보면 비교예(4) 보다 높은 발광효율을 나타내고 있는 것을 확인할 수 있었으며, 치환기인 다이아릴아민기가 카바졸의 3번보다 2번에 위치한 본 발명품이 월등히 좋은 발광효율을 나타내고 있는 것을 확인하였다. Table 7 shows the comparison of the luminous efficiency and color purity with Comparative Example (4) using the present invention product as a phosphorescent host, and also to compare the difference in luminous efficiency depending on the position when a substituent is connected to the carbazole. The results of Table 7 show that the luminous efficiency of the present invention is higher than that of Comparative Example (4), and the diarylamine group, which is a substituent of the carbazole, Respectively.
따라서 상기 표-6, 표-7의 결과로부터 알 수 있듯이, 본 발명물인 카바졸의 2번 위치에 다이아릴아민기가 연결되어 있는 유기전기발광소자용 재료를 이용한 유기전기발광소자는 낮은 구동전압, 고 색순도, 고 효율 및 고 수명을 나타낸다. Therefore, as can be seen from the results of Tables 6 and 7, the organic electroluminescent device using the material for the organic electroluminescence device having the diarylamine group connected to the position 2 of carbazole, High color purity, high efficiency and long life.
이상의 설명은 본 발명을 예시적으로 설명한 것에 불과한 것으로, 본 발명이 속하는 기술분야에서 통상의 지식을 가지는 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위에서 다양한 변형이 가능할 것이다. 따라서, 본 명세서에 개시된 실시 예들은 본 발명을 한정하기 위한 것이 아니라 설명 하기 위한 것이고, 이러한 실시 예에 의하여 본 발명의 사상과 범위가 한정되는 것은 아니다. While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Accordingly, the embodiments disclosed herein are intended to be illustrative rather than limiting, and the spirit and scope of the present invention is not limited by these embodiments.
본 발명의 보호범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술은 본 발명의 권리범위에 포함하는 것으로 해석되어야 할 것이다.The scope of protection of the present invention should be construed according to the following claims, and all the techniques within the scope of the same should be construed as being included in the scope of the present invention.
Claims (10)
상기 화학식 (3) 및 화학식 (4)에서,
1) Ar1 은 페닐; 바이페닐; 1-나프틸기; 2-나프틸기; C6~C60의 아릴기, C5~C20의 헤테로 고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 피리딘; C6~C60의 아릴기, C5~C20의 헤테로 고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 피리미딘; C6~C60의 아릴기, C5~C20의 헤테로 고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 트리아진이며;
2) Ar2 내지 Ar4는 각각 동일하거나 상이하며, 수소, 중수소, 할로겐, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C1~C20의 알콕시기, C1~C20의 알킬아민기, C1~C20 의 알킬티오펜기, C6~C20의 아릴티오펜기, C2~C20의 알케닐기, C2~C20의 알키닐기, C3~C20의 시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C8~C20의 아릴알케닐기, 실란기, 붕소기, 게르마늄기, C5~C20의 헤테로고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 C6~C60의 아릴기; 수소, 중수소, 할로겐기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C8~C20의 아릴아민기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C8~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C5~C20의 헤테로 고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 1개 이상의 치환기로 치환 또는 비치환 되고 O, 및 S 중 적어도 하나를 갖는 치환 또는 비치환된 C5~C60의 헤테로아릴기; 수소, 중수소, 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20 의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C3~C60의 헤테로아릴기로 이루어진 군으로부터 선택된 1개 이상의 치환기로 치환 또는 비치환된 C1~C30의 알콕시기; 수소, 중수소, 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C3~C60의 헤테로아릴기로 이루어진 군으로 부터 선택된 1개 이상의 치환기로 치환 또는 비치환된 C6~C30아릴옥시기; 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, C3~C60의 헤테로아릴기로 이루어진 군으로부터 선택된 1개 이상의 치환기로 치환 또는 비치환된 C6~C60의 아릴아민기; C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C6~C20의 아릴기, 중수소로 치환된 C2~C20의 아릴기, C8~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C5~C20의 헤테로 고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C1~C50의 알킬기이며, Ar3 과 Ar4는 서로 인접한 기와 결합하여 포화 또는 불포화 지방족고리 또는 헤테로 고리를 형성할 수 있다.An organic electronic device comprising a compound represented by any one of the following formulas (3) and (4):
In the above formulas (3) and (4)
1) Ar 1 is phenyl; Biphenyl; A 1-naphthyl group; A 2-naphthyl group; Pyridines substituted with at least one substituent selected from the group consisting of C 6 to C 60 aryl groups and C 5 to C 20 heterocyclic groups; A pyrimidine substituted with at least one substituent selected from the group consisting of an aryl group of C 6 to C 60 and a heterocyclic group of C 5 to C 20 ; An aryl group having 6 to 60 carbon atoms, a heterocyclic group having 5 to 20 carbon atoms, or a substituted or unsubstituted triazine group;
2) Ar 2 to Ar 4 is a nitro group, C 1 ~ C alkoxy group 20 alkyl, C 1 ~ C 20 of, C 1 ~ C 20, the same or different, hydrogen, deuterium, a halogen, an amino group, a nitrile group, and each of alkyl amine group, C 1 ~ alkyl group of C 20 thiophene group, C 6 ~ C 20 aryl thiophene group, C 2 ~ C 20 alkenyl group, C 2 ~ C 20 alkynyl group, C 3 ~ C 20 of a cycloalkyl group, C 6 ~ C 60 aryl group, of a C 6 ~ C 20 substituted by deuterium aryl group, an arylalkenyl group of C 8 ~ C 20, a silane group, a boron group, a germanium group, a C 5 ~ C 20 of a C 6 ~ C 60 substituted or unsubstituted with one or more substituents selected from the group consisting of a hetero ring with an aryl group; A halogen atom, a halogen atom, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 8 to C 20 arylamine group, a C 6 to C 60 aryl Membered heterocyclic group, a nitrile group, and an acetylene group, each of which is substituted with at least one substituent selected from the group consisting of a halogen atom, a C 6 to C 20 aryl group substituted with deuterium, a C 8 to C 20 arylalkyl group, a C 8 to C 20 arylalkenyl group, a C 5 to C 20 heterocyclic group, substituted with one or more substituents from the group or unsubstituted, and O, and optionally substituted with at least one of S or unsubstituted C 5 ~ C 60 heteroaryl group; A halogen atom, an amino group, a nitrile group, a nitro group, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 3 to C 30 cycloalkyl group, At least one substituent selected from the group consisting of a C 2 to C 30 heterocycloalkyl group, a C 6 to C 60 aryl group, a C 6 to C 20 aryl group substituted with deuterium, and a C 3 to C 60 heteroaryl group A substituted or unsubstituted C 1 to C 30 alkoxy group; A halogen atom, an amino group, a nitrile group, a nitro group, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 3 to C 30 cycloalkyl group, At least one substituent selected from the group consisting of a C 2 to C 30 heterocycloalkyl group, a C 6 to C 60 aryl group, a C 6 to C 20 aryl group substituted with deuterium, and a C 3 to C 60 heteroaryl group substituted or unsubstituted C 6 ~ C 30 aryloxy group as; A halogen group, an amino group, a nitrile group, a nitro group, C 1 ~ C 20 alkyl group, C 2 ~ C 20 alkenyl group, C 1 ~ C 20 alkoxy group, C 3 ~ C 30 of the cycloalkyl group, C 2 ~ C heterocycloalkyl group, C 6 ~ C 60 aryl group, C 3 ~ C of the arylamine group with one or more substituents selected from the 60 heteroaryl group consisting of a substituted or unsubstituted C 6 ~ C 60 of 30; C alkyl group of 1 ~ C 20, C 2 ~ C 20 alkenyl group, C 1 ~ C 20 alkoxy group, C 6 ~ aryl group of C 20 aryl group, a C 2 ~ C 20 substituted with deuterium, C 8 of alkyl ~ C 20 aryl group, C 8 ~ C 20 aryl alkenyl group, C 5 ~ C 20 of the hetero ring group, nitrile group and acetylene group unsubstituted or substituted with a substituent selected from the group consisting of C 1 ~ C 50 And Ar 3 and Ar 4 may combine with adjacent groups to form a saturated or unsaturated aliphatic ring or a heterocyclic ring.
The organic electroluminescent device according to claim 1, wherein the compound represented by any one of the formulas (3) and (4) is selected from the following compounds:
상기 화학식 (3) 및 화학식 (4)에서,
1) Ar1 은 페닐; 바이페닐; 1-나프틸기; 2-나프틸기; C6~C60의 아릴기, C5~C20의 헤테로 고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 피리딘; C6~C60의 아릴기, C5~C20의 헤테로 고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 피리미딘; C6~C60의 아릴기, C5~C20의 헤테로 고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 트리아진이며;
2) Ar2 내지 Ar4는 각각 동일하거나 상이하며, 수소, 중수소, 할로겐, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C1~C20의 알콕시기, C1~C20의 알킬아민기, C1~C20 의 알킬티오펜기, C6~C20의 아릴티오펜기, C2~C20의 알케닐기, C2~C20의 알키닐기, C3~C20의 시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C8~C20의 아릴알케닐기, 실란기, 붕소기, 게르마늄기, C5~C20의 헤테로고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환 또는 비치환된 C6~C60의 아릴기; 수소, 중수소, 할로겐기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C8~C20의 아릴아민기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C8~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C5~C20의 헤테로 고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 1개 이상의 치환기로 치환 또는 비치환 되고 O, 및 S 중 적어도 하나를 갖는 치환 또는 비치환된 C5~C60의 헤테로아릴기; 수소, 중수소, 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20 의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C3~C60의 헤테로아릴기로 이루어진 군으로부터 선택된 1개 이상의 치환기로 치환 또는 비치환된 C1~C30의 알콕시기; 수소, 중수소, 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C3~C60의 헤테로아릴기로 이루어진 군으로 부터 선택된 1개 이상의 치환기로 치환 또는 비치환된 C6~C30아릴옥시기; 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, C3~C60의 헤테로아릴기로 이루어진 군으로부터 선택된 1개 이상의 치환기로 치환 또는 비치환된 C6~C60의 아릴아민기; C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C6~C20의 아릴기, 중수소로 치환된 C2~C20의 아릴기, C8~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C5~C20의 헤테로 고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C1~C50의 알킬기이며, Ar3 과 Ar4는 서로 인접한 기와 결합하여 포화 또는 불포화 지방족고리 또는 헤테로 고리를 형성할 수 있다. A compound represented by any one of the following formulas (3) and (4):
In the above formulas (3) and (4)
1) Ar 1 is phenyl; Biphenyl; A 1-naphthyl group; A 2-naphthyl group; Pyridines substituted with at least one substituent selected from the group consisting of C 6 to C 60 aryl groups and C 5 to C 20 heterocyclic groups; A pyrimidine substituted with at least one substituent selected from the group consisting of an aryl group of C 6 to C 60 and a heterocyclic group of C 5 to C 20 ; An aryl group having 6 to 60 carbon atoms, a heterocyclic group having 5 to 20 carbon atoms, or a substituted or unsubstituted triazine group;
2) Ar 2 to Ar 4 is a nitro group, C 1 ~ C alkoxy group 20 alkyl, C 1 ~ C 20 of, C 1 ~ C 20, the same or different, hydrogen, deuterium, a halogen, an amino group, a nitrile group, and each of alkyl amine group, C 1 ~ alkyl group of C 20 thiophene group, C 6 ~ C 20 aryl thiophene group, C 2 ~ C 20 alkenyl group, C 2 ~ C 20 alkynyl group, C 3 ~ C 20 of a cycloalkyl group, C 6 ~ C 60 aryl group, of a C 6 ~ C 20 substituted by deuterium aryl group, an arylalkenyl group of C 8 ~ C 20, a silane group, a boron group, a germanium group, a C 5 ~ C 20 of a C 6 ~ C 60 substituted or unsubstituted with one or more substituents selected from the group consisting of a hetero ring with an aryl group; A halogen atom, a halogen atom, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 8 to C 20 arylamine group, a C 6 to C 60 aryl Membered heterocyclic group, a nitrile group, and an acetylene group, each of which is substituted with at least one substituent selected from the group consisting of a halogen atom, a C 6 to C 20 aryl group substituted with deuterium, a C 8 to C 20 arylalkyl group, a C 8 to C 20 arylalkenyl group, a C 5 to C 20 heterocyclic group, substituted with one or more substituents from the group or unsubstituted, and O, and optionally substituted with at least one of S or unsubstituted C 5 ~ C 60 heteroaryl group; A halogen atom, an amino group, a nitrile group, a nitro group, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 3 to C 30 cycloalkyl group, At least one substituent selected from the group consisting of a C 2 to C 30 heterocycloalkyl group, a C 6 to C 60 aryl group, a C 6 to C 20 aryl group substituted with deuterium, and a C 3 to C 60 heteroaryl group A substituted or unsubstituted C 1 to C 30 alkoxy group; A halogen atom, an amino group, a nitrile group, a nitro group, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 3 to C 30 cycloalkyl group, At least one substituent selected from the group consisting of a C 2 to C 30 heterocycloalkyl group, a C 6 to C 60 aryl group, a C 6 to C 20 aryl group substituted with deuterium, and a C 3 to C 60 heteroaryl group substituted or unsubstituted C 6 ~ C 30 aryloxy group as; A halogen group, an amino group, a nitrile group, a nitro group, C 1 ~ C 20 alkyl group, C 2 ~ C 20 alkenyl group, C 1 ~ C 20 alkoxy group, C 3 ~ C 30 of the cycloalkyl group, C 2 ~ C heterocycloalkyl group, C 6 ~ C 60 aryl group, C 3 ~ C of the arylamine group with one or more substituents selected from the 60 heteroaryl group consisting of a substituted or unsubstituted C 6 ~ C 60 of 30; C alkyl group of 1 ~ C 20, C 2 ~ C 20 alkenyl group, C 1 ~ C 20 alkoxy group, C 6 ~ aryl group of C 20 aryl group, a C 2 ~ C 20 substituted with deuterium, C 8 of alkyl ~ C 20 aryl group, C 8 ~ C 20 aryl alkenyl group, C 5 ~ C 20 of the hetero ring group, nitrile group and acetylene group unsubstituted or substituted with a substituent selected from the group consisting of C 1 ~ C 50 And Ar 3 and Ar 4 may combine with adjacent groups to form a saturated or unsaturated aliphatic ring or a heterocyclic ring.
9. The compound according to claim 8, wherein the compound represented by any one of the formulas (3) and (4) is selected from the following compounds:
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