KR101916872B1 - Method for restoring coating layer of semiconductor process equipment component and semiconductor process equipment component thereof - Google Patents

Method for restoring coating layer of semiconductor process equipment component and semiconductor process equipment component thereof Download PDF

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KR101916872B1
KR101916872B1 KR1020150144035A KR20150144035A KR101916872B1 KR 101916872 B1 KR101916872 B1 KR 101916872B1 KR 1020150144035 A KR1020150144035 A KR 1020150144035A KR 20150144035 A KR20150144035 A KR 20150144035A KR 101916872 B1 KR101916872 B1 KR 101916872B1
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layer
coating layer
coating
restoration
thickness
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KR20170044396A (en
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김병기
유승남
김선배
장세우
임종식
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아이원스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

In the present invention, a method of recycling parts of semiconductor processing equipment, which can reduce material and cost by removing only contaminants accumulating in parts of semiconductor processing equipment and a part of the upper part of coating layer and preserving undamaged coating layer, Equipment components are disclosed.
As an example, a base material; A coating layer formed to cover a surface of the base material; And a step of preparing a process equipment part including a contaminated layer stacked on the coating layer; A preservation layer preserving step of removing the contaminant layer and only a part of the coating layer under the contaminant layer to preserve the preservation layer; A restoration layer forming step of forming a restoration layer on the storage layer; and a restoration layer forming step of restoring the restoration layer on the storage layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device,

The present invention relates to a method for regenerating a coating layer of a semiconductor processing equipment part and a semiconductor processing equipment part accordingly.

Coating processes currently in commercial use are generally used in thermal spray coating processes. The most important feature of this thermal spray coating process is to spray coating a ceramic or metal material having a high melting point with a very high thermal energy onto a base material through rapid phase transformation. In order to optimize conditions of a work process, And it is possible to coat a three-dimensional shape through various equipments during the injection process. The thermal spray coating process is highly reliable in the fields of chemical and abrasion-resistant coatings based on these excellent properties and is widely applied in various fields such as aerospace, semiconductor, and machine vessel.

In particular, the surface of the process equipment used in the semiconductor process is generally laminated with a protective layer by a thermal spray coating method using a ceramic material having a high melting point for a coating for protecting the chemical / plasma. However, continued use of process equipment can damage these protective layers or create contaminants on the surface, which can cause problems during semiconductor processing. Therefore, there is a need for work to remove contaminants from process equipment components.

The present invention relates to a method for regenerating parts of a semiconductor processing equipment, which can reduce material and cost by removing only contaminants accumulating in semiconductor process equipment parts and a part of the upper part of the coating layer and preserving the undamaged coating layer, Provide equipment parts.

A method of regenerating a semiconductor process equipment part according to the present invention comprises: A coating layer formed to cover a surface of the base material; And a step of preparing a process equipment part including a contaminated layer stacked on the coating layer; A preservation layer preserving step of removing the contaminant layer and only a part of the coating layer under the contaminant layer to preserve the preservation layer; And a restoration layer forming step of forming a restoration layer on the storage layer.

Here, the thickness of the restoration layer may be thicker than the thickness of the coating layer removed in the preservation layer storage step.

The thickness of the coating layer removed by the storage layer preserving step may be 20 to 30 占 퐉, and the thickness of the preserved storage layer may be 70 to 100 占 퐉.

Also, the thickness of the restoration layer may be 70-100 탆.

Also, in the storage layer storage step, the removal of the contamination layer and a part of the coating layer may be performed through a wet bead blast using zirconium (Zr) powder.

The restoration layer may be formed by thermal spray coating.

Also, the restoration layer may be formed in a vacuum chamber of 760 torr or less.

The restoration layer may be formed of any one selected from the group consisting of Aerosol Deposition (AD), Suspension Plasma Spray (SPS), Solution Precursor Plasma Spray (SPPS), and Low Temperature Spray Coating.

In addition, the coating layer, retention layer and restoring layer is yttrium-based oxide, a fluoride, a nitride, Y 2 O 3 -Al 2 O 3 based compounds (YAG, YAP, YAM), B 4 C, ZrO 2, alumina (Al 2 O 3 ), and equivalents thereof, and mixtures thereof.

Semiconductor process equipment parts according to the present invention can be manufactured by the method described above.

The recycling method of the semiconductor processing equipment parts and the semiconductor processing equipment parts according to the present invention can reduce the material cost and the cost reduction by preserving the uncontaminated coating layer by removing only contaminants accumulating in the semiconductor processing equipment parts and a part of the upper part of the coating layer. .

1 is a flowchart of a method of recovering a coating layer of a semiconductor processing equipment component according to an embodiment of the present invention.
2A to 2C are sequential sectional views for explaining a method of regenerating a coating layer of a semiconductor processing equipment part according to an embodiment of the present invention.
3 is a flowchart of a method of recovering a coating layer of a semiconductor processing equipment component according to another embodiment of the present invention.
4 is a cross-sectional view illustrating a method of recovering a coating layer of a semiconductor processing equipment component according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily carry out the present invention.

1 is a flowchart of a method of regenerating a coating layer of a semiconductor processing equipment part according to an embodiment of the present invention.

Referring to FIG. 1, a method of regenerating a coating layer of a semiconductor process equipment part according to an embodiment of the present invention includes a step of preparing a process equipment part (S10), a preservation layer preserving step (S20), and a restoration layer forming step (S30).

2A to 2C are sequential sectional views for explaining a method of regenerating a coating layer of a semiconductor processing equipment part according to an embodiment of the present invention. Hereinafter, a method of recovering a coating layer of a semiconductor processing equipment component according to an embodiment of the present invention will be described with reference to FIG.

Referring to FIGS. 1 and 2A, a process equipment component preparing step S10 for preparing process equipment parts for regenerating the coating layer is performed. That is, the process equipment parts are prepared for recycling and reuse after using the process equipment parts. Here, the process equipment component may be a component exposed to the plasma environment during the process. That is, the process equipment part is a part used in a semiconductor or a display process equipment, specifically, a part located inside a process chamber for manufacturing a semiconductor or a display.

More specifically, the process equipment components may include an electrostatic chuck, a heater, a chamber liner, a shower head, a boat for CVD (Chemical Vapor Deposition), a focus ring a focus ring, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shiled, an upper liner An exhaust plate, an edge ring, a mask frame, and the like. However, the present invention does not limit the parts of such process equipment.

Further, in the drawings, the coating structure of the surface of the process equipment parts is simply shown, and thus the present invention is not limited thereto.

The process equipment part according to the present invention includes a base material 10, a coating layer 20 'coated on one side of the base material 10 and a contaminant layer 30 formed on one side of the coating layer 20'.

The base material 10 is generally made of a metallic material.

The coating layer 20 'is formed on one side of the base material 10 to protect the base material 10. It is preferable that the coating layer 20 'is made of a material excellent in chemical resistance, plasma resistance and electrical characteristics so as not to be easily deformed by the environment inside the chamber during the process.

The coating layer 20 'is yttrium-based oxide, a fluoride, a nitride, Y 2 O 3 -Al 2 O 3 based compounds (YAG, YAP, YAM), B 4 C, ZrO 2, alumina (Al 2 O 3), and that And equivalents. However, the present invention is not limited to these materials.

Specifically, the coating layer 20 'may include at least one selected from the group consisting of yttria (Y 2 O 3 ), YAG (Y 3 Al 5 O 12 ), rare earths (elements of atomic numbers 57 to 71 including Y and Sc) It may be one or a mixture of two or more selected from the group consisting of alumina (Al 2 O 3 ), bioglass, silicon (SiO 2 ), hydroxyapatite, titanium dioxide (TiO 2 ) The present invention is not limited thereto.

More specifically, the coating layer 20 'is hydroxyapatite, calcium phosphate, bio-glass, Pb (Zr, Ti) O 3 (PZT), alumina, titanium dioxide, zirconia (ZrO 2), yttria (Y 2 O 3 Yttria stabilized zirconia, Dy 2 O 3 , Gd 2 O 3 , CeO 2 , GDC, Gadolinia doped, Ceria), magnesia (MgO), barium titanate (BaTiO 3), nickel TKO carbonate (NiMn 2 O 4), potassium sodium niobate (KNaNbO 3), bismuth potassium titanate (BiKTiO 3), bismuth sodium titanate (BiNaTiO 3 ), CoFe 2 O 4, NiFe 2 O 4, BaFe 2 O 4, NiZnFe 2 O 4, ZnFe 2 O 4, MnxCo 3 -xO 4 ( where, x is a positive real number less than 3), bismuth ferrite (BiFeO 3 ), Bismuth zinc niobate (Bi1.5Zn1Nb1.5O7), lithium aluminum titanium glass ceramic, Li-La-Zr-O based garnet oxide, Li-La-Ti-O based perovskite oxide, La-Ni- , Phosphoric acid A lithium-manganese oxide, a lanthanum-strontium-iron-cobalt oxide, a lithium-cobalt oxide, a Li-Mn-O-based spinel oxide (lithium manganese oxide), lithium aluminum gallium oxide, tungsten oxide, tin oxide, lanthanum nickel oxide, Wherein the phosphor is at least one selected from the group consisting of cobalt oxide, silicate-based fluorescent material, SiAlON-based fluorescent material, aluminum nitride, silicon nitride, titanium nitride, AlON, silicon carbide, titanium carbide, tungsten carbide, magnesium boride, titanium boride, A mixture of ceramics and polymers, a mixture of ceramics and metals, nickel, copper, silicon, and their equivalents. However, the present invention is not limited to these materials.

The coating layer 20 'may be deposited by any one of thermal spray coating, AD method, SPS method, SPPS method, and low temperature spray coating method, but the present invention is not limited thereto. That is, any coating method capable of forming the coating layer 20 'on the base material 10 may be applied.

The thermal spray coating is a surface coating method in which a coating material in the form of powder or rod having specific properties required for a surface is melted and semi-melted using various heat sources such as plasma in an atmospheric or vacuum atmosphere, and sprayed at high speed to form an overlay coating Technology. The thermal spray coating may be classified into a flame spraying, an arc spraying, a plasma spraying, an explosion spraying, a line width spraying, a laser spraying, and a super high speed flame spraying depending on the heat source to be used.

The AD method, the SPS method, the SPPS method, and the low temperature spray coating method will be described later in more detail.

The contamination layer 30 is formed on the surface of the coating layer 20 '. The contamination layer 30 is formed by accumulating contaminants during the process due to the long use of the process equipment parts. That is, as the semiconductor process is performed, not only the substrate on which the process is performed but also the parts in the process chamber are exposed to the working environment, so that the contaminated layer 30 is formed on the parts for a long time.

On the other hand, the thickness of the coating layer before the use of the process equipment part, that is, the initial state, is approximately 140 to 200 mu m. However, since the process equipment parts are exposed to a plasma etching or a deposition process in the process chamber, the thickness of the coating layer may be reduced or a contaminated layer may be formed. As a result, in the process equipment component preparation step (S10) The thickness may be approximately 100 to 130 mu m. Of course, in the initial state, there is no contamination layer, and it is natural that the thickness of the coating layer decreases and the contamination layer accumulates with the use of process equipment parts.

Although not specifically shown in the drawing, the lower part of the contamination layer 30, that is, the area above the coating layer 20 'in contact with the contamination layer 30, is also deformed due to the long- Can be achieved. That is, as the surface of the coating layer 20 'is also exposed to the process environment, characteristics, roughness, cracks, and the like are formed as compared with the initial state, thereby including the damage region.

1 and 2B, a preservation layer preservation step S20 is performed in which the contaminant layer 30 and the upper surface of the coating layer 20 'are selectively peeled off and only the undamaged coating layer at the bottom is preserved. At this time, the entire coating layer 20 'is not removed, but only about 20 to 30 μm of the surface is selectively removed, so that the initial pure coating layer can be preserved to about 70 to 100 μm. Here, the pure coating layer in which the initial state is maintained is referred to as a storage layer 20. That is, in the storage layer storage step S20, only a part of the surface of the coating layer 20 ', that is, the damaged area is removed. At this time, in order to completely remove the damaged region, the depth of the removed region is preferably slightly deeper than the depth of the damaged region. Accordingly, preservation of the undamaged storage layer 20 under the coating layer can exhibit material saving and cost reduction effect.

The removal of the surface of the coating layer 20 'and the contaminated layer 30 may be performed through a wet bead blast using zirconium (Zr) powder. This is a method of spraying water containing zirconium powder at a high pressure to perform surface treatment. In particular, it is possible to selectively remove the surface of the coating layer 20 'by controlling the working time, injection pressure, spray distance, spray angle and powder size .

Referring to FIGS. 1 and 2C, a restoration layer forming step S30 for forming a restoration layer 40 on the surface of the storage layer 20 is performed. That is, the restoration layer 40 is formed to restore the thickness of the reduced coating layer and the thickness of the coating layer reduced by the preservation layer preserving step (S20) according to the use of the process equipment parts. At this time, the restoration layer 40 may have a thickness of about 70 to 100 탆. Therefore, the sum of the thicknesses of the storage layer 20 and the restoration layer 40 may be 140 to 200 탆 which is substantially the same as the initial thickness of the coating layer before use of the semiconductor processing equipment. That is, the total thickness of the reduced coating layer is compensated by forming the restoration layer 40 thicker than the thickness of the removed coating layer.

The restoration layer 40 may be formed of the same material as the storage layer 20. That is, the restoring layer 40 is yttrium-based oxide, a fluoride, a nitride, Y 2 O 3 -Al 2 O 3 based compounds (YAG, YAP, YAM), B 4 C, ZrO 2, alumina (Al 2 O 3) And their equivalents. However, the present invention is not limited to these materials.

The restoration layer 40 may be formed by thermal spray coating. Particularly, the restoration layer 40 is formed using an APS (Atmospheric Plasma Spray) method in which a powder composed of the above materials is melted and half-melted in plasma in an atmospheric pressure chamber and sprayed at a high speed for coating . At this time, the degree of vacuum in the chamber in which the restoration layer 40 is formed may be about 760 torr or more.

Although the storage layer 20 and the restoration layer 40 are shown as different layers in the drawing, the storage layer 20 and the restoration layer 40 are substantially the same coating layer, It does not support.

As described above, in the method of recovering the coating layer of the semiconductor process equipment part according to the embodiment of the present invention, when the contamination layer of the process equipment part is removed, only the contaminated layer deposited on the surface of the coating layer and the damaged area on the coating layer are selectively peeled It is possible to preserve the preservation layer and to exhibit the effect of material reduction and cost reduction. In addition, since the entire coating layer coated on the base material is not removed, the base material is not exposed to the outside, so there is no risk of damage, and the service life of the part can be prolonged. In addition, since the thickness of the entire coating layer is thicker than the initial thickness, the strength and resistance of the coating layer can be further improved.

Hereinafter, a method for regenerating a coating layer of a semiconductor processing equipment part according to another embodiment of the present invention will be described.

3 is a flowchart of a method of recovering a coating layer of a semiconductor processing equipment component according to another embodiment of the present invention.

Referring to FIG. 3, a method of recovering a coating layer of a semiconductor process equipment component according to another embodiment of the present invention includes a process equipment component preparation step (S10), a storage layer storage step (S20), and a restoration layer formation step (S40) . Here, the process equipment component preparing step (S10) and the preservation layer preserving step (S20) are the same as those of the previous embodiment, so that a duplicated description will be omitted.

4 is a cross-sectional view illustrating a method of recovering a coating layer of a semiconductor processing equipment component according to another embodiment of the present invention. Hereinafter, the coating layer forming step (S40) will be mainly described with reference to FIG.

Referring to FIG. 3, a step S10 of preparing a process equipment part including a base material, a coating layer coated on one surface of the base material, and a contaminant layer formed on one surface of the coating layer is performed as in the previous embodiment. Then, a preservation layer preserving step (S20) for preserving the preservation layer is performed by removing only the contamination layer and a part of the upper part of the coating layer through a wet bead blast using zirconium (Zr) powder. Thus, only the base material 10 and the storage layer 20 remain in the process equipment parts. At this time, the thickness of the storage layer 20 may be about 70 to 100 탆, as in the previous embodiment.

3 and 4, a restoration layer forming step S40 for forming a restoration layer 50 on the preservation layer 20 is performed after the preservation layer preservation step S20. That is, a restoration layer 50 is formed on the storage layer 20 so that the thickness of the coating layer reduced by the use of the processing equipment parts and the thickness of the coating layer reduced by the preservation layer storage step S20 Restore. At this time, the restoration layer 50 may have a thickness of about 70 to 100 탆. Therefore, the sum of the thicknesses of the storage layer 20 and the restoration layer 50 may be approximately 140 to 200 占 퐉. That is, by making the thickness of the restoration layer 50 thicker than the thickness of the removed coating layer, the total thickness of the reduced coating layer is compensated.

The restoration layer 50 may be formed of the same material as the preservation layer 20. That is, the restoring layer 50 is yttrium-based oxide, a fluoride, a nitride, Y 2 O 3 -Al 2 O 3 based compounds (YAG, YAP, YAM), B 4 C, ZrO 2, alumina (Al 2 O 3) And their equivalents. However, the present invention is not limited to these materials.

The restoration layer 50 may be formed by an Aerosol Deposition (AD) method, a Suspension Plasma Spray (SPS) method, a SPPS (Solution Precursor Plasma Spray) method, a low temperature spray coating method, etc. However, the present invention is not limited thereto . That is, although the restoration layer is formed by the APS method in the atmospheric pressure state in the previous embodiment, the restoration layer 50 may be formed in the vacuum state in another embodiment of the present invention. In particular, the degree of vacuum in the vacuum chamber in which the restoration layer 50 is formed may be about 760 torr or less. The restoration layer formed using this method can be formed to have a structure similar to DLC (Diamond Like Carbon). Therefore, the generation of troubles such as out-gassing and particles occurring in the semiconductor process with high density and excellent surface shape can be reduced. In addition, since the restoration layer 50 has chemical stability, hardness, corrosion resistance, and abrasion resistance, the restoration layer 50 can have an effect of increasing the service life of the process equipment parts.

In the case of the AD method, fine particles and ultrafine particle raw materials are mixed with a gas and aerosolized, and then sprayed onto a substrate through a nozzle to form a film. Since the formation of the coating layer through the AD method is performed at room temperature in a vacuum state, it is not necessary to provide a member for controlling the temperature inside the separate chamber. That is, it is possible to form a coating layer more easily than in the previous embodiment in which an ultra-high temperature plasma is used. In addition, since the sprayed raw material collides with the surface of the substrate and is pulverized by the impact energy to form a dense coating layer, the porosity is very small, and the plasma resistance can be further improved.

In the SPS method, a fine powder is mixed with a liquid to form a slurry, which is then injected into a plasma jet and sprayed to form a coating. It is possible to coat fine particles with a high density by using a slurry.

In the SPPS method, a precursor solution is injected into a plasma jet and is sprayed to form a coating, thereby forming a coating layer having a nanometer-sized fine structure.

The low-temperature spray coating method is a technique of coating by injecting a coating powder into a supersonic gas flow to induce a high deformation at the same time as colliding with the surface of a base material, thereby enabling coating at room temperature to prevent deformation of the material, And the abrasion resistance, fatigue resistance, heat resistance and corrosion resistance can be improved.

As described above, in the method of recovering the coating layer of the semiconductor process equipment part according to the embodiment of the present invention, when the contamination layer of the process equipment part is removed, only the contaminated layer deposited on the surface of the coating layer and the damaged area on the coating layer are selectively peeled It is possible to preserve the preservation layer and to exhibit the effect of material reduction and cost reduction. In addition, since the entire coating layer coated on the base material is not removed, the base material is not exposed to the outside, so there is no risk of damage, and the service life of the part can be prolonged. In addition, since the thickness of the entire coating layer is thicker than the initial thickness, the strength and resistance of the coating layer can be further improved.

In addition, when the coating layer is formed again after removing the contaminant layer, a more dense coating layer can be formed in the vacuum chamber by the AD method, the SPS method, the SPPS method, the low temperature spray coating method, or the like. Accordingly, the occurrence of troubles during the semiconductor process is reduced, the plasma resistance is further improved, the chemical stability, hardness, corrosion resistance, and wear resistance can be obtained, thereby increasing the lifetime of process equipment parts.

Although the storage layer 20 and the restoration layer 50 are shown as different layers in the drawing, the storage layer 20 and the restoration layer 50 are substantially the same coating layer, It does not support.

It is to be understood that the present invention is not limited to the above-described embodiment, but may be embodied in the following claims It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims.

10; Base material 20 '; Coating layer
20; A storage layer 30; Contaminant layer
40, 50; Restoration layer

Claims (10)

Preparing a process equipment part including a base material, a coating layer formed to cover the surface of the base material, and a contaminated layer stacked on the coating layer;
A preservation layer preserving step of preserving the contaminant layer and a preservation layer made of only the coating layer which covers the base material by removing only a part of the coating layer under the contaminant layer; And
And a restoration layer forming step of forming a restoration layer directly on the storage layer, wherein the thickness of the restoration layer is greater than the thickness of the coating layer removed in the preservation layer storage step to compensate for the reduced thickness of the coating layer Wherein the coating layer is formed on the surface of the semiconductor substrate. delete The method according to claim 1,
Wherein the thickness of the coating layer removed by the storage layer storage step is 20 to 30 占 퐉 and the thickness of the preserved storage layer is 70 to 100 占 퐉. The method according to claim 1,
Wherein the thickness of the restoration layer is 70 to 100 占 퐉. The method according to claim 1,
Wherein the removal of the contaminating layer and a portion of the coating layer is performed through a wet bead blast using zirconium (Zr) powder in the storage layer storage step. The method according to claim 1,
Wherein the restoration layer is formed by thermal spray coating. The method according to claim 1,
Wherein the restoration layer is formed in a vacuum chamber of 760 torr or less. The method according to claim 1,
Wherein the restoration layer is formed of any one selected from the group consisting of Aerosol Deposition (AD), Suspension Plasma Spray (SPS), Solution Precursor Plasma Spray (SPPS), and Low Temperature Spray Coating . The method according to claim 1,
The coating layer, retention layer and restoring layer is yttrium-based oxide, a fluoride, a nitride, Y 2 O 3 -Al 2 O 3 based compounds (YAG, YAP, YAM), B 4 C, ZrO 2, alumina (Al 2 O 3) And an equivalent thereof. The method of claim 1, wherein the coating layer is a mixture of two or more of the following materials: delete
KR1020150144035A 2015-10-15 2015-10-15 Method for restoring coating layer of semiconductor process equipment component and semiconductor process equipment component thereof KR101916872B1 (en)

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KR20210091409A (en) 2020-01-13 2021-07-22 (주)티티에스 Regeneration method of electrostatic chuck
KR102332730B1 (en) 2020-01-13 2021-12-01 (주)티티에스 Regeneration method of electrostatic chuck

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