KR101582481B1 - Substrate processing apparatus, cover member therefor, tray therefor and substrate processing method - Google Patents

Substrate processing apparatus, cover member therefor, tray therefor and substrate processing method Download PDF

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KR101582481B1
KR101582481B1 KR1020100108960A KR20100108960A KR101582481B1 KR 101582481 B1 KR101582481 B1 KR 101582481B1 KR 1020100108960 A KR1020100108960 A KR 1020100108960A KR 20100108960 A KR20100108960 A KR 20100108960A KR 101582481 B1 KR101582481 B1 KR 101582481B1
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South Korea
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substrate
tray
dummy substrate
corner
substrates
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KR1020100108960A
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Korean (ko)
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KR20120047413A (en
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김병준
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주식회사 원익아이피에스
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Priority to KR1020100108960A priority Critical patent/KR101582481B1/en
Priority to CN201110317379.5A priority patent/CN102569125B/en
Publication of KR20120047413A publication Critical patent/KR20120047413A/en
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Abstract

The present invention provides a process chamber comprising: a process chamber for forming a processing space for substrate processing; A substrate support which is provided inside the process chamber and supports a tray in which a plurality of substrates are placed in a rectangular array of n × m (n, m is a natural number of 2 or more); And a cover portion including a cover plate having a plurality of openings formed in the upper and lower portions and spaced apart from the substrate to cover the substrate and a support portion for supporting the cover plate so as to be spaced apart from the substrate, The substrate processing apparatus according to any one of claims 1 to 3, wherein the substrate processing apparatus is configured such that: at a corner portion of a tray corresponding to a vertex of at least one of vertexes of a rectangular array formed by arranging a plurality of substrates, A dummy substrate is seated on the substrate processing apparatus.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, a cover member used therein, a tray used therein, and a substrate processing method.

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing such as etching a substrate, a cover member used therein, a tray used therein, and a substrate processing method.

The substrate processing apparatus includes a process chamber that forms a closed process space, and a substrate support that is installed in the process chamber and on which the substrate is mounted. The surface of the substrate is etched by applying power while injecting the process gas into the process space And then performing the substrate processing.

The substrates to be processed by the substrate processing apparatus include semiconductor wafers, glass substrates for LCD panels, and solar cell substrates.

As an example of the above-mentioned substrate processing apparatus, a cover member having a plurality of openings formed on the upper side of a substrate by placing a plurality of substrates for a solar cell using a tray on the substrate support is dumped to form a fine concavo- There is a substrate processing apparatus that performs substrate processing so as to form a substrate, which may vary depending on the characteristics of the device, and in particular, to lower the reflectance of light by the substrate in order to increase the efficiency of the solar cell device.

As described above, the substrate processing apparatus for forming fine irregularities on the surface of the substrate by covering the cover member forms the irregularities on the surface of the substrate through the following steps.

The substrate processing apparatus according to the related art forms plasma in the processing space when power is applied while gas is being injected into the processing chamber, and a part of the plasma and the gas pass through the opening of the cover member to etch the surface of the substrate.

And some of the compounds formed by the substrate etching float in the clogging space between the bottom surface of the cover member and the substrate and some of the remaining compounds and suspended compounds adhere to the surface of the substrate and act as a mask in the substrate etching process Thereby promoting the formation of fine irregularities on the surface of the substrate.

Here, the cover member of the conventional substrate processing apparatus includes a cover plate having a plurality of openings formed therein, and a support portion provided at an edge of the cover plate so that the cover plate can be spaced apart from the substrate.

On the other hand, in the conventional substrate processing method of forming micro concavity and convexity using the cover member, a difference may occur in the density of the compound depending on the position such as the central portion and the edge portion of the cover member, especially near the vertex, Has a problem in that it affects the formation of fine concavities and convexities on the surface of the substrate, causing a color difference of the substrate.

Particularly, in the substrate processing method performed by the conventional substrate processing apparatus, as shown in FIG. 6A, a significant color difference occurs on the substrate surface after the substrate processing in the vicinity of the vertex among the substrates mounted in the rectangular arrangement.

The color difference of the substrate surface means a difference in reflectance, and the effect of reducing the reflectance due to the formation of fine irregularities of the substrate can not be sufficiently achieved, thereby lowering the efficiency of the solar cell device.

In addition, there is a problem that the substrate having a color difference is not easy to be sold in the market because it is visually bad and is mistaken as a defective product, which lowers the reliability of the product in the market and is distributed at a lower price than the colorless substrate.

It is an object of the present invention to provide a substrate processing apparatus capable of preventing a color difference from occurring on a surface of a substrate positioned at a vertex among substrates mounted on a tray in a rectangular array, And a tray and a substrate processing method used therefor.

The present invention has been made in order to achieve the above-mentioned object of the present invention, and it is an object of the present invention to provide a process chamber for forming a process space for processing a substrate, A substrate support which is provided inside the process chamber and supports a tray in which a plurality of substrates are placed in a rectangular array of n × m (n, m is a natural number of 2 or more); And a cover portion including a cover plate having a plurality of openings formed in the upper and lower portions and spaced apart from the substrate to cover the substrate and a support portion for supporting the cover plate so as to be spaced apart from the substrate, The substrate processing apparatus according to any one of claims 1 to 3, wherein the substrate processing apparatus is configured such that a corner portion of a tray corresponding to a vertex of at least one of vertices of a rectangular array formed by arranging a plurality of substrates, A dummy substrate is seated on the substrate processing apparatus.

The corner dummy substrate may be seated over at least one substrate with respect to the vertex.

A corner receiving groove into which a part of the corner dummy substrate is inserted in the depth direction of the tray may be formed on the upper surface of the tray so as to prevent the position of the corner dummy substrate from moving when the tray is moved.

At the edges of the rectangular array of the plurality of substrates, at least one outer dummy substrate including the same components as those of the substrate may be additionally provided.

An outer housing groove may be formed on an upper surface of the tray so that a part of the outer dummy substrate is inserted in the depth direction of the tray to prevent the outer dummy substrate from moving when the tray is moved.

The width of the outer dummy substrate may be 5 to 15% of the length of the short side of the substrate, and the width of the corner dummy substrate may be 10 to 80% of the length of the short side of the substrate.

The width of the corner dummy substrate may be 15 to 30% of the short side length of the substrate.

The width of the outer dummy substrate may be 5 to 20% of the length of the short side of the substrate.

The sum of the width of the outer dummy substrate and the width of the corner dummy substrate may be 15 to 100% of the short side length of the substrate.

The sum of the width of the outer dummy substrate and the width of the corner dummy substrate may be 15 to 35% of the short side length of the substrate.

The width of the corner dummy substrate may be 10 to 80% of the short side length of the substrate.

Wherein the supporting portion has a substantially rectangular shape corresponding to a rectangular array of the plurality of substrates, the inner surface of the supporting portion being equally spaced from the edge of the outer dummy substrate, And can be installed at a distance from the corner dummy substrate.

The outer dummy substrate may have a portion corresponding to the corner dummy substrate integrated with the corner dummy substrate.

The support portion may have a substantially rectangular shape corresponding to a rectangular array of the plurality of substrates, the inner surface of the support portion may be recessed outward at a portion corresponding to the corner dummy substrate.

The supporting portion may have a substantially rectangular shape formed on the outer surface, and a dummy substrate receiving groove may be formed in a portion corresponding to the corner dummy substrate and formed outwardly concave.

Crystalline silicon may be used for the substrate and the corner dummy substrate.

The present invention also discloses a cover member which is a cover portion of the substrate processing apparatus.

The present invention also discloses a tray of the substrate processing apparatus.

According to another aspect of the present invention, there is provided a substrate processing method for processing a substrate by the substrate processing apparatus, wherein the substrate processing method comprises the steps of: And the substrate processing is carried out while one or more corner dummy substrates including the same components are placed.

The substrate processing apparatus, the cover member, the tray used therein, and the substrate processing method according to the present invention are characterized in that the substrate processing apparatus according to the present invention includes a plurality of substrates By performing the substrate processing in a state in which the corner dummy member is seated, there is an advantage that the color difference of the substrate positioned at the corner of the tray can be improved and the quality, efficiency and productivity of the substrate can be greatly improved.

Particularly, in the substrate processing apparatus according to the present invention, the cover member used therein may be formed by forming a dummy substrate receiving groove formed outwardly concavely in a portion corresponding to the corner dummy substrate in the supporting portion constituting the cover portion, It is possible to greatly improve the quality, efficiency and productivity of the substrate without increasing the manufacturing cost of the apparatus.

1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.
Fig. 2 is a plan view of the tray, the substrates mounted on the tray and the support of the cover in Fig. 1;
FIG. 3A is a partial plan view showing the supports in the cover portion and the substrates mounted on the tray, the tray in FIGS. 1 and 2. FIG.
FIG. 3B is a sectional view in the III-III direction in FIG. 3A.
Fig. 4 is a partial plan view showing a tray showing a case having another cover portion modified in the substrate processing apparatus of Fig. 1, substrates mounted on the tray, and supports of the cover portion. Fig.
FIG. 5 is a partial plan view showing a tray showing a case with another cover portion modified in the substrate processing apparatus of FIG. 1, substrates mounted on the tray, and supports of the cover portion.
6A and 6B are conceptual diagrams showing a silicon substrate subjected to substrate processing by a conventional substrate processing apparatus and a silicon substrate processed by a substrate processing apparatus according to the present invention, respectively.

Hereinafter, a substrate processing apparatus, a cover member, a tray used therein, and a substrate processing method according to the present invention will be described in detail with reference to the accompanying drawings. The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the general description, serve to explain the principles of the invention.

FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to the present invention, and FIG. 2 is a plan view showing substrates mounted on a tray and a tray in FIG.

As shown in FIG. 1, a substrate processing apparatus according to the present invention includes a process chamber 100 forming a process space S for substrate processing; A substrate support 130 disposed within the process chamber 100 and supporting a tray 30 on which a plurality of substrates 10 are mounted; And a cover part 200 on which a plurality of openings 211 are formed so as to penetrate the substrate 10 and cover the substrate 10. Here, the substrate treatment can be performed on various substrates, and reactive ion etching is particularly preferable.

The substrate 10, which is an object of the substrate processing, can be any substrate as long as it requires substrate processing such as etching. In particular, it is possible to form a fine concavo- Substrates are also possible.

When the substrate 10 is a silicon substrate for a solar cell, a plurality of fine irregularities are formed on the surface of the substrate 10 in order to increase the efficiency of the solar cell using the substrate processing apparatus according to the present invention, Lowering.

The substrate 10 may be placed on the tray 30 in an array of n × m (n, m is a natural number of 2 or more) for the efficiency of substrate processing.

The tray 30 has a structure in which a plurality of substrates 10 are placed thereon and the substrate 10 is transferred. The material and the shape of the tray 30 can be variously changed depending on the type of the substrate 10 and the processing process. Here, the tray 30 is made of a material resistant to plasma such as borosilicate glass, Al 2 O 3 , quartz, various resins, and the like, as a structure for transferring the substrates 10 in a seated state, It is not necessary that the substrate 10 is directly attached to the substrate support 130.

The process chamber 100 is configured to form an enclosed process space S for substrate processing. The process chamber 100 may have various configurations according to a substrate processing process. As shown in FIG. 1, And a chamber body 120 and a top lead 110 that form a processing space. Here, the process performed by the substrate processing apparatus according to the present invention includes an etching process for etching a surface of the substrate 10 by forming a plasma in a vacuum state.

The chamber body 120 may have various configurations according to design and design and at least one gate 170 opened and closed by a gate valve is formed so that the tray 30 on which the substrate 10 is placed can be input and output .

A showerhead 140 is provided in the process chamber 100 to discharge the process gas from the gas supply device (not shown) provided outside and injects the process gas into the process space S, There are installed apparatuses for carrying out a vacuum processing process such as a substrate support 130 on which a substrate is placed, a pressure adjusting unit in the process space S, and an exhaust pipe 180 connected to an exhaust system (not shown) for exhausting.

The substrate support 130 supports a tray 30 on which the substrates 10 are mounted and includes a lower electrode (not shown) to which power is applied so that a reaction for substrate processing, such as plasma formation, Respectively.

Here, the lower electrode is grounded to the process chamber 100 and the showerhead 140 according to a power application method, and one or two RF powers are applied, or the lower electrode is grounded, and the process chamber 100 and the showerhead 140 are grounded. Or the first RF power is applied to the lower electrode and the second RF power is applied to the process chamber 100 and the showerhead 140. In this case,

As shown in FIGS. 1, 2, 4 and 5, a cover plate 210 having a plurality of openings 211 is formed in the cover unit 200, And a support 220 mounted on the edge of the cover plate 210 to support the cover plate 210 so that the cover plate 210 is spaced apart from the substrate 10 mounted on the tray 30 with a predetermined gap therebetween .

At this time, the cover part 200 forms a covering space between the trays 30 on which the substrate 10 is placed, confines the compound formed by the plasma introduced through the opening part 211, And is used for a predetermined purpose such as forming fine irregularities. Here, when the substrate 10 is a silicon substrate, the compound includes a silicon compound or the like.

The distance between the bottom surface of the cover unit 200 and the cover plate 210 and the surface of the substrate 10 placed on the tray 30 is determined by taking into consideration the effect of trapping the residue and the forming speed of the concavo- Mm to 30 mm.

The opening 211 formed in the cover plate 210 may have various shapes and dimensions depending on the use purpose of the cover unit 200 and may be formed as long as the slit. When the opening 211 is formed as a slit, it is preferable that the width of the opening 211 is less than 1/2 of the distance between the bottom surface of the cover plate 210 and the substrate 10.

The opening 211 may be chamfered at the edge of the opening 211 in at least one of the upper surface and the lower surface.

Various materials may be used for the cover plate 210 according to the vacuum process, and a material resistant to plasma may be used, and the cover plate 210 may have aluminum or an alloy thereof.

The fine concavities and convexities formed on the surface of the substrate 10 due to the covering of the cover part 200 are formed nonuniformly with respect to the upper surface of the tray 30 or the upper surface of the substrate supporter 130 .

The cover member 200 may be configured such that the distance from the upper surface of the tray 30 or the upper surface of the substrate support 130 to the bottom surface of the cover plate 220 is constant or may be different from each other at the center portion and the outer portion .

In addition, the cover plate 210 may have an opening ratio formed by the opening 211 different from the central portion and the outer portion, and the opening ratio of the central portion may be higher than the opening ratio of the outer portion.

The support part 220 is configured to partition the process space S and the cover space while maintaining a certain distance from the cover plate 210 and the tray 30 on which the substrate 10 is mounted. And may be integrally formed or separately formed from the cover plate 210. At this time, the support part 220 may have a material different from that of the cover plate 210.

The cover part 200 is provided with a pair of tabs (not shown) on the support part 220 so as to be vertically transportable by a separate transfer device (not shown) for covering the tray 30 on which the substrate 10 is placed. Can be installed.

The cover unit 200 is configured to cover the tray 30 on which the substrate 10 is placed in the substrate processing apparatus or the process chamber 100 or to cover the substrate 10 The tray 30 can be transported together with the tray 30 in a closed state.

One or more anti-sagging posts (not shown) may be installed between the cover part 200 and the tray 30 to maintain a predetermined distance from the bottom surface of the cover part 200 and the tray 30. [

The anti-sagging post may have any structure as long as it keeps the gap between the bottom surface of the cover part 200 and the tray 30 and is made of a material resistant to plasma such as aluminum, aluminum alloy, silicone, and Teflon .

Meanwhile, the outer dummy substrate 310 having the same material as the substrate 10 may be additionally provided along the edge of the substrates 10 mounted on the tray 30. Particularly, the substrates 10 positioned at the center portion can be used as the outer dummy substrate 310 at the edge of the substrate 10 positioned at the edge where the neighboring substrate 10 is absent, Can be installed.

The outer side dummy substrate 310 is inserted into the outer side of the tray 30 in the depth direction of the tray 30 to prevent movement of the outer side dummy substrate 310 when the tray 30 is moved. A groove (not shown) may be formed.

It is preferable that the substrate 10 and the outer dummy substrate 310 are made of the same material and that the outer dummy substrate 310 is made of monocrystal or polycrystalline silicon which is the same material when the substrate 10 is single crystal or polycrystalline silicon .

As described above, the concavities and convexities formed on the surface of the substrate 10 by the covering of the cover part 200 are formed unevenly according to the positions of the center part and the outer part, and in particular, There is a problem that a color difference as shown in FIG. 6A is generated according to experiments on the upper surface or the surface of the substrate 10 located near the vertex with reference to the upper surface of the substrate supporter 130.

Therefore, as shown in FIGS. 2, 3A and 3B, the substrate processing apparatus according to the present invention includes a tray (not shown) corresponding to a vertex of at least one of vertexes of a rectangular array formed by disposing a plurality of substrates 10 One or more corner dummy substrates 320 including the same components as the main components of the substrate 10 are seated in the corner portions of the trays 30 at the corners of the tray 30, ) On the tray 30 over the two sides forming the vertexes of at least any one of the vertices of the rectangular array of the plurality of vertexes.

The corner dummy substrate 320 is a member for improving the color difference formed in the substrate 10 positioned in the vicinity of the vertex of the rectangular array or the vertex of the tray 30, ) Or the same material as that of the substrate 10 is preferably used. Here, the outer dummy substrate 310 may be integrally formed with the corner dummy substrate 320 in a portion corresponding to the corner dummy substrate 320.

The corner dummy substrate 320 is preferably mounted on at least one substrate 10 with respect to the vertex of the tray 30 so as to sufficiently attain the color difference improving effect.

Of course, the corner dummy substrate 320 may improve the chrominance of the substrate 10 positioned at the vertex of the tray 30, and may be positioned over a half of the length of the short side of the rectangular substrate 10.

The reason why the corner dummy substrate 320 is used without increasing the width of the at least one outer dummy substrate 310 provided at the edge of the rectangular array of the plurality of substrates 10 is that the cost of the outer dummy substrate 310 There is a problem that the manufacturing cost of the substrate is increased by the use of the substrate 310.

In contrast, by using the corner dummy substrate 320, it is possible to minimize the use of the dummy substrate and achieve an optimal chrominance improvement effect on the substrate 10 positioned at the vertex.

The width W1 of the outer dummy substrate 310 is 5 to 15% of the length W0 of one side (short side) of the substrate 10, The width W2 of the corner dummy substrate 320 is preferably 10 to 80% of the length W0 of the short side of the substrate 10. At this time, More preferably 15% to 30%.

The width W1 of the outer dummy substrate and the width of the corner dummy substrate W2 can be selected according to design and design.

That is, the width W1 of the outer dummy substrate may be 5 to 20% of the short side length W0 of the substrate.

The width W2 of the corner dummy substrate may be 10 to 80% of the short side length W0 of the substrate 10.

Further, the width W1 of the outer dummy substrate and the width of the corner dummy substrate W2 can be also determined by the sum.

That is, the sum of the width W1 of the outer dummy substrate and the width W2 of the corner dummy substrate is preferably 15 to 100% of the short side length W0 of the substrate, %.

Here, the numerical values of the widths W1 and W2 of the outer dummy substrate 310 and the corner dummy substrate 320 exemplify a preferable example, and needless to say it is not limited thereto.

However, the reason why the widths W1 and W2 of the outer dummy substrate 310 and the corner dummy substrate 320 are limited as described above is that if the width is too small, the effect of installing the dummy substrate can not be achieved.

It is preferable that the widths W1 and W2 of the outer dummy substrate 310 and the corner dummy substrate 320 are as large as possible if only the side of the uneven formation is viewed. If the width is too large, there is a problem that the dummy substrate is excessively used and the manufacturing cost is increased.

The outer dummy substrate 310 and the corner dummy substrate 320 are in close contact with each other and the outer dummy substrate 310 is spaced apart from the substrate 10 in order to form a uniform processing environment, May have a smaller or substantially equal spacing than the spacing formed.

The corner dummy substrate 320 placed on the tray 30 is transported in the process of transporting the cover unit 200 according to the overlapping and uncovering of the cover unit 200. In this case, The position of the substrate 10 may fluctuate and the substrate 10 may be prevented from being seated.

3B, a portion of the corner dummy substrate 320 is inserted in the depth direction of the tray 30 in order to prevent the position of the corner dummy substrate 320 from being shifted, Receiving grooves 31 may be formed.

When the corner dummy substrate 320 is additionally provided, the substrate support 130, the tray 30, and the cover 200 may be larger by the width of the corner dummy substrate 320, Should be reduced.

However, if the size of the substrate support 130, the tray 30, and the cover unit 200 is increased for installing the corner dummy substrate 320, the manufacturing cost of the apparatus is increased, There is a problem that the productivity of the substrate 10 is lowered.

2 to 3B, the supporting portion 220 has a rectangular shape such as a substantially rectangular shape corresponding to a rectangular array of the plurality of substrates 10, and the inner surface of the supporting portion 220 has a rectangular shape, And the recessed portion is formed to be concave outward in a portion corresponding to the recessed portion.

In particular, as shown in FIGS. 2 and 3A, the support portion 220 may be formed with a dummy substrate receiving groove 221 formed to be concave outward at a portion corresponding to the corner dummy substrate 320.

4, the support part 220 may be formed of a plate member instead of forming the dummy substrate receiving grooves 221 to correspond to the corner dummy substrate 320, The outer dummy substrate 310, and the corner dummy substrate 320, as shown in FIG.

5, the supporting part 220 has a rectangular shape such as a substantially rectangular shape corresponding to a rectangular array of the plurality of substrates 10, and the inner surface of the supporting part 220 is formed in an outer And may be configured to have the same spacing from the edge of the dummy substrate 310.

At this time, each of the corner dummy substrates 320 is spaced apart from the neighboring corner dummy substrate 320 by an interval GA.

As described above, the corner dummy substrate 320 is disposed on the substrate supporter 130 through the tray 30 through two sides forming the vertex at the vertex of at least one of the vertices of the rectangular array of the plurality of substrates 10, It is found that the color difference formed on the surface of the substrate 10 located at the vertex is significantly different from that of the substrate 10 as shown in the conceptual diagram of FIG. .

Meanwhile, the substrate processing method performed by the substrate processing apparatus having the above-described configuration can be performed as follows.

That is, the substrate processing method according to the present invention is a method for processing a substrate on a plurality of substrates 10 arranged on n × m (n, m is a natural number of 2 or more) through a tray 30 on a substrate support 130, 30 are covered with the substrate.

The cover 30 may cover the substrates 10 mounted on the tray 30 before being introduced into the process chamber 100 or may be separated from the substrate 30 by a separate closure device (not shown) (10).

In addition, the substrate processing may be performed by forming at least one corner dummy substrate 320 including the same component as the main component of the substrate 10 into two or more corner dummy substrates 320 forming a vertex at the vertex of at least one of the vertexes of the rectangular array of the plurality of substrates 10 The substrate processing apparatus 100 performs the substrate processing with the substrate 30 mounted on the substrate support 130 via the tray 30.

As described above, the substrate can be processed in various ways, and it can be a process of forming a large number of fine irregularities on the surface of a crystalline silicon substrate, particularly a polycrystalline silicon substrate, used as a solar cell by reactive ion etching as described above.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It is to be understood that both the technical idea and the technical spirit of the invention are included in the scope of the present invention.

10: substrate 30: tray
100: process chamber 200: cover part
210: cover plate 220:
310: outer dummy substrate 320: corner dummy substrate

Claims (19)

A process chamber for forming a processing space for substrate processing; A substrate support which is provided inside the process chamber and supports a tray in which a plurality of substrates are placed in a rectangular array of n × m (n, m is a natural number of 2 or more); And a cover portion including a cover plate having a plurality of openings formed in the upper and lower portions and spaced apart from the substrate to cover the substrate and a support portion for supporting the cover plate so as to be spaced apart from the substrate, In the processing apparatus,
Wherein at least one outer dummy substrate is provided on the upper surface of the tray, the substrate including a component such as a component of the substrate outside the edge of the rectangular array of the plurality of substrates,
Wherein the substrate processing apparatus includes a plurality of substrates, a plurality of substrates arranged on the substrate, and a plurality of substrates arranged on the substrate, Wherein the corner dummy substrate is seated.
The method according to claim 1,
Wherein the corner dummy substrate is seated over at least one substrate with respect to the vertex of the tray.
The method according to claim 1,
And a corner receiving groove into which a part of the corner dummy substrate is inserted in a depth direction of the tray is formed on an upper surface of the tray so as to prevent the corner dummy substrate from moving when the tray is moved.
delete The method according to claim 1,
Wherein the upper surface of the tray is formed with an outer receiving groove into which a part of the outer dummy substrate is inserted in a depth direction of the tray so as to prevent a positional shift of the outer dummy substrate when the tray is moved.
The method according to claim 1,
Wherein the substrate has a rectangular shape, the width of the outer dummy substrate is 5 to 15% of the length of the short side of the substrate, and the width of the corner dummy substrate is 10 to 80% of the short side length of the substrate. / RTI >
The method of claim 6,
Wherein the width of the corner dummy substrate is 15 to 30% of the short side length of the substrate.
The method according to claim 1,
Wherein the width of the outer dummy substrate is 5 to 20% of the length of the short side of the substrate.
The method according to claim 1,
Wherein the sum of the width of the outer dummy substrate and the width of the corner dummy substrate is 15 to 100% of the short side length of the substrate.
The method of claim 9,
Wherein the sum of the width of the outer dummy substrate and the width of the corner dummy substrate is 15 to 35% of the short side length of the substrate.
The method according to claim 1,
Wherein a width of the corner dummy substrate is 10 to 80% of a length of the short side of the substrate.
The method according to claim 1,
Wherein the support portion has a rectangular shape corresponding to a rectangular array of the plurality of substrates,
The inner surface of the support portion has the same distance from the edge of the outer dummy substrate,
Wherein each corner dummy substrate is spaced apart from a neighboring corner dummy substrate.
The method according to claim 1,
Wherein a portion of the outer dummy substrate corresponding to the corner dummy substrate is provided integrally with the corner dummy substrate.
The method according to claim 1,
Wherein the support portion has a rectangular shape corresponding to a rectangular array of the plurality of substrates,
Wherein the recessed portion is recessed outward at a portion corresponding to the corner dummy substrate.
The method according to claim 1,
The supporting portion has a rectangular shape formed by the outer surface,
And a dummy substrate receiving groove formed outwardly concave at a portion corresponding to the corner dummy substrate.
The method according to any one of claims 1 to 3 and claims 5 to 15,
Wherein the substrate and the corner dummy substrate are crystalline silicon.
delete delete A substrate processing method by a substrate processing apparatus according to claim 16,
The substrate processing method includes placing at least one corner dummy substrate including a component identical to a component of the substrate on a corner of a tray corresponding to at least one of apexes of a rectangular array formed by arranging a plurality of substrates Wherein the substrate processing is carried out in the substrate processing apparatus.
KR1020100108960A 2010-11-04 2010-11-04 Substrate processing apparatus, cover member therefor, tray therefor and substrate processing method KR101582481B1 (en)

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CN201110317379.5A CN102569125B (en) 2010-11-04 2011-10-18 Substrate processing apparatus and substrate processing method

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KR102084961B1 (en) * 2013-10-10 2020-03-06 주식회사 디엠에스 Tray assembly for dry etching and Dry etching apparatus using the same
JP6494443B2 (en) * 2015-06-15 2019-04-03 東京エレクトロン株式会社 Film forming method and film forming apparatus
CN112133654B (en) * 2016-07-18 2024-07-09 圆益Ips股份有限公司 Alignment module

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