KR101507423B1 - Compound for organic electronic element, organic electronic element using the same, and a electronic device thereof - Google Patents
Compound for organic electronic element, organic electronic element using the same, and a electronic device thereof Download PDFInfo
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- KR101507423B1 KR101507423B1 KR20120067270A KR20120067270A KR101507423B1 KR 101507423 B1 KR101507423 B1 KR 101507423B1 KR 20120067270 A KR20120067270 A KR 20120067270A KR 20120067270 A KR20120067270 A KR 20120067270A KR 101507423 B1 KR101507423 B1 KR 101507423B1
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- compound
- substituted
- deuterium
- aryl
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 608
- 239000010410 layer Substances 0.000 claims description 81
- 125000003118 aryl group Chemical group 0.000 claims description 65
- 239000011368 organic material Substances 0.000 claims description 39
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 36
- 125000000217 alkyl group Chemical group 0.000 claims description 34
- 229910052805 deuterium Inorganic materials 0.000 claims description 32
- 239000012044 organic layer Substances 0.000 claims description 29
- 125000001424 substituent group Chemical group 0.000 claims description 26
- 125000000623 heterocyclic group Chemical group 0.000 claims description 25
- 125000003342 alkenyl group Chemical group 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 claims description 15
- 125000003545 alkoxy group Chemical group 0.000 claims description 15
- 125000005842 heteroatom Chemical group 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052722 tritium Inorganic materials 0.000 claims description 15
- 150000002431 hydrogen Chemical class 0.000 claims description 13
- 125000005843 halogen group Chemical group 0.000 claims description 11
- 125000002560 nitrile group Chemical group 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 125000005264 aryl amine group Chemical group 0.000 claims description 7
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 7
- 125000001931 aliphatic group Chemical group 0.000 claims description 6
- 125000003277 amino group Chemical group 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229920006395 saturated elastomer Polymers 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 125000003368 amide group Chemical group 0.000 claims description 2
- 125000004104 aryloxy group Chemical group 0.000 claims description 2
- 229910018540 Si C Inorganic materials 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 29
- 238000006243 chemical reaction Methods 0.000 description 29
- 238000003786 synthesis reaction Methods 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 26
- 229910002027 silica gel Inorganic materials 0.000 description 26
- 239000000741 silica gel Substances 0.000 description 26
- 229960001866 silicon dioxide Drugs 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- 239000000203 mixture Substances 0.000 description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 12
- 238000002156 mixing Methods 0.000 description 11
- 238000010992 reflux Methods 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000000434 field desorption mass spectrometry Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 0 *[n](c(cccc1)c1c1c2)c1c(cccc1)c1c2Br Chemical compound *[n](c(cccc1)c1c1c2)c1c(cccc1)c1c2Br 0.000 description 8
- 125000005018 aryl alkenyl group Chemical group 0.000 description 8
- 230000005525 hole transport Effects 0.000 description 8
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 7
- 125000000753 cycloalkyl group Chemical group 0.000 description 7
- 229940117389 dichlorobenzene Drugs 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- 101150003085 Pdcl gene Proteins 0.000 description 6
- -1 aryl halide compound Chemical class 0.000 description 6
- 238000001308 synthesis method Methods 0.000 description 6
- KZPYGQFFRCFCPP-UHFFFAOYSA-N 1,1'-bis(diphenylphosphino)ferrocene Chemical compound [Fe+2].C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1 KZPYGQFFRCFCPP-UHFFFAOYSA-N 0.000 description 5
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 5
- 125000003282 alkyl amino group Chemical group 0.000 description 5
- 125000000304 alkynyl group Chemical group 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 4
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- 125000002346 iodo group Chemical group I* 0.000 description 4
- 150000002828 nitro derivatives Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 125000000732 arylene group Chemical group 0.000 description 3
- IPWKHHSGDUIRAH-UHFFFAOYSA-N bis(pinacolato)diboron Chemical compound O1C(C)(C)C(C)(C)OB1B1OC(C)(C)C(C)(C)O1 IPWKHHSGDUIRAH-UHFFFAOYSA-N 0.000 description 3
- 229940126214 compound 3 Drugs 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011541 reaction mixture Substances 0.000 description 3
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- 238000006443 Buchwald-Hartwig cross coupling reaction Methods 0.000 description 2
- 101000933374 Gallus gallus Brain-specific homeobox/POU domain protein 3 Proteins 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 238000005885 boration reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000010189 synthetic method Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- ICPSWZFVWAPUKF-UHFFFAOYSA-N 1,1'-spirobi[fluorene] Chemical group C1=CC=C2C=C3C4(C=5C(C6=CC=CC=C6C=5)=CC=C4)C=CC=C3C2=C1 ICPSWZFVWAPUKF-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- TVNOOIYYNKVGMQ-UHFFFAOYSA-N Bc(cc1)cc(c2c(cccc3)c3c(cccc3)c3c22)c1[n]2-c1cc(cccc2)c2cc1 Chemical compound Bc(cc1)cc(c2c(cccc3)c3c(cccc3)c3c22)c1[n]2-c1cc(cccc2)c2cc1 TVNOOIYYNKVGMQ-UHFFFAOYSA-N 0.000 description 1
- PRZLRRSJVJERSL-UHFFFAOYSA-N Bc(cc1c2c3c(cccc4)c4c4c2CCC=C4)ccc1[n]3-c1c(cccc2)c2ccc1 Chemical compound Bc(cc1c2c3c(cccc4)c4c4c2CCC=C4)ccc1[n]3-c1c(cccc2)c2ccc1 PRZLRRSJVJERSL-UHFFFAOYSA-N 0.000 description 1
- ZBWCAMGTLKWVMJ-UHFFFAOYSA-N Bc(cc1c2c3c(cccc4)c4c4c2cccc4)ccc1[n]3-c(cc1)ccc1-c1cc(C2=CCCC=C2)nc(C2=CC=CCC2)c1 Chemical compound Bc(cc1c2c3c(cccc4)c4c4c2cccc4)ccc1[n]3-c(cc1)ccc1-c1cc(C2=CCCC=C2)nc(C2=CC=CCC2)c1 ZBWCAMGTLKWVMJ-UHFFFAOYSA-N 0.000 description 1
- LORPCLXIYSFMCG-UHFFFAOYSA-N Bc(cc1c2c3c(cccc4)c4c4c2cccc4)ccc1[n]3-c(cc1)ccc1C1=CCCC=C1 Chemical compound Bc(cc1c2c3c(cccc4)c4c4c2cccc4)ccc1[n]3-c(cc1)ccc1C1=CCCC=C1 LORPCLXIYSFMCG-UHFFFAOYSA-N 0.000 description 1
- BPZQHILDLGBKGW-UHFFFAOYSA-N Bc(cc1c2c3c4ccccc4c4ccccc24)ccc1[n]3-c1ccccc1 Chemical compound Bc(cc1c2c3c4ccccc4c4ccccc24)ccc1[n]3-c1ccccc1 BPZQHILDLGBKGW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 102100026459 POU domain, class 3, transcription factor 2 Human genes 0.000 description 1
- 238000006069 Suzuki reaction reaction Methods 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- JKJUTDXMGFBHCV-UHFFFAOYSA-N [AlH2][n](c1ccccc11)c2c1c1ccccc1c1c2cccc1 Chemical compound [AlH2][n](c1ccccc11)c2c1c1ccccc1c1c2cccc1 JKJUTDXMGFBHCV-UHFFFAOYSA-N 0.000 description 1
- MNQJGBHFVUDAJW-UHFFFAOYSA-N [AlH3].C1(=CC=CC=C1)C1=CC=CC=C1 Chemical group [AlH3].C1(=CC=CC=C1)C1=CC=CC=C1 MNQJGBHFVUDAJW-UHFFFAOYSA-N 0.000 description 1
- PRMZUCFBTDEYFW-UHFFFAOYSA-N [O-][N+](c(cccc1)c1-c1cc(cccc2)c2c2c1cccc2)=O Chemical compound [O-][N+](c(cccc1)c1-c1cc(cccc2)c2c2c1cccc2)=O PRMZUCFBTDEYFW-UHFFFAOYSA-N 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- BGEVROQFKHXUQA-UHFFFAOYSA-N c(cc1)cc2c1[nH]c1c2c2ccccc2c2c1cccc2 Chemical compound c(cc1)cc2c1[nH]c1c2c2ccccc2c2c1cccc2 BGEVROQFKHXUQA-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 125000004404 heteroalkyl group Chemical group 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 125000005549 heteroarylene group Chemical group 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 101150075118 sub1 gene Proteins 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 108010072897 transcription factor Brn-2 Proteins 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D403/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00
- C07D403/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings
- C07D403/04—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings directly linked by a ring-member-to-ring-member bond
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
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- C—CHEMISTRY; METALLURGY
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- C07D—HETEROCYCLIC COMPOUNDS
- C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
- C07D401/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D403/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00
- C07D403/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing three or more hetero rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
- C07D409/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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Abstract
본 발명은 신규한 화합물, 이를 이용한 유기전기소자 및 그 전자 장치에 관한 것으로, 본 발명에 따르면 소자의 발광효율, 색순도 및 수명을 향상시킬 수 있고, 구동전압을 낮출 수 있다.The present invention New The present invention relates to a compound, an organic electric device using the same, and an electronic device, and can improve the luminous efficiency, color purity and lifetime of the device and lower the driving voltage.
Description
본 발명은 화합물, 이를 포함하는 유기전기소자 및 그 전자 장치에 관한 것이다.TECHNICAL FIELD [0001] The present invention relates to a compound, an organic electric device including the same, and an electronic device thereof.
일반적으로 유기 발광 현상이란 유기 물질을 이용하여 전기에너지를 빛 에너지로 전환시켜 주는 현상을 말한다. 유기 발광 현상을 이용하는 유기전기소자는 통상 양극과 음극 및 이 사이에 유기물층을 포함하는 구조를 가진다. 여기서 유기물 층은 유기전기소자의 효율과 안정성을 높이기 위하여 각기 다른 물질로 구성된 다층의 구조로 이루어진 경우가 많으며, 예컨대 정공주입층, 정공수송층, 발광층, 전자수송층 및 전자주입층 등으로 이루어질 수 있다. In general, organic light emission phenomenon refers to a phenomenon in which an organic material is used to convert electric energy into light energy. An organic electric device using an organic light emitting phenomenon generally has a structure including an anode, an anode, and an organic material layer therebetween. Here, in order to increase the efficiency and stability of the organic electronic device, the organic material layer is often formed of a multilayer structure composed of different materials, and may be formed of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
유기전기소자에서 유기물층으로 사용되는 재료는 기능에 따라, 발광 재료와 전하 수송 재료, 예컨대 정공주입 재료, 정공수송 재료, 전자수송 재료, 전자주입 재료 등으로 분류될 수 있다. A material used as an organic material layer in an organic electric device may be classified into a light emitting material and a charge transporting material such as a hole injecting material, a hole transporting material, an electron transporting material, and an electron injecting material depending on functions.
한편, 유기전기소자의 수명단축 원인 중 하나인 양극전극(ITO)으로부터 금속 산화물이 유기층으로 침투 확산되는 것을 지연시키며, 소자 구동시 발생되는 주울열(Joule heating)에 대해서도 안정된 특성, 즉 높은 유리 전이 온도를 갖는 정공 주입층 재료에 대한 개발이 필요하다. 또한 정공 수송층 재료의 낮은 유리전이 온도는 소자 구동시에 박막 표면의 균일도가 무너지는 특성에 따라 소자수명에 큰 영향을 미치는 것으로 보고되고 있다. 또한, OLED 소자의 형성에 있어서 증착방법이 주류를 이루고 있으며, 이러한 증착방법에 오랫동안 견딜 수 있는 재료 즉 내열성 특성이 강한 재료가 필요한 실정이다. On the other hand, the diffusion of metal oxide from the anode electrode (ITO), which is one of the causes of shortening the lifetime of the organic electronic device, is delayed, and stable characteristics such as joule heating generated during driving the device, It is necessary to develop a hole injection layer material having a temperature. It is also reported that the low glass transition temperature of the hole transporting layer material significantly affects the lifetime of the device depending on the characteristics of the uniformity of the thin film surface collapsing during device operation. In addition, the deposition method is the mainstream in the formation of OLED devices, and a material that can withstand such a long time, that is, a material having high heat resistance characteristics, is required.
전술한 유기전기소자가 갖는 우수한 특징들을 충분히 발휘하기 위해서는 소자 내 유기물층을 이루는 물질, 예컨대 정공주입 물질, 정공수송 물질, 발광 물질, 전자수송 물질, 전자주입 물질 등이 안정하고 효율적인 재료에 의하여 뒷받침되는 것이 선행되어야 하나, 아직까지 안정하고 효율적인 유기전기소자용 유기물층 재료의 개발이 충분히 이루어지지 않은 상태이며, 따라서 새로운 재료의 개발이 계속 요구되고 있다.In order to sufficiently exhibit the excellent characteristics of the organic electroluminescent device described above, a material constituting the organic material layer in the device, such as a hole injecting material, a hole transporting material, a light emitting material, an electron transporting material, and an electron injecting material is supported by a stable and efficient material However, stable and efficient development of an organic material layer for an organic electric device has not yet been sufficiently developed, and therefore development of a new material is continuously required.
본 발명은 소자의 높은 발광효율, 낮은 구동전압, 고내열성, 색순도 및 수명을 향상시킬 수 있는 화합물, 이를 이용한 유기전기소자 및 그 전자장치를 제공하는 것을 목적으로 한다. It is an object of the present invention to provide a compound capable of improving a high luminous efficiency, a low driving voltage, a high heat resistance, a color purity and a lifetime of the device, an organic electric device using the same, and an electronic device thereof.
일측면에서, 본 발명은 하기 화학식 1로 표시되는 화합물을 제공한다.In one aspect, the present invention provides a compound represented by the following general formula (1).
다른 측면에서, 본 발명은 상기 화학식 1로 표시되는 화합물을 이용한 유기전기소자 및 그 전자장치를 제공한다.In another aspect, the present invention provides an organic electronic device using the compound represented by Formula 1 and an electronic device thereof.
본 발명에 따른 화합물을 이용함으로써 소자의 높은 발광효율, 낮은 구동전압, 고내열성을 달성할 수 있고, 소자의 색순도 및 수명을 크게 향상시킬 수 있다. By using the compound according to the present invention, it is possible to achieve a high luminous efficiency, a low driving voltage, and a high heat resistance of the device, and can greatly improve the color purity and lifetime of the device.
도 1은 본 발명에 따른 유기전기발광소자의 예시도이다. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an illustration of an organic electroluminescent device according to the present invention. FIG.
이하, 본 발명의 실시예를 첨부된 도면을 참조하여 상세하게 설명한다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
각 도면의 구성요소들에 참조부호를 부가함에 있어서, 동일한 구성요소들에 대해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 부호를 가지도록 하고 있음에 유의해야 한다. 또한, 본 발명을 설명함에 있어, 관련된 공지 구성 또는 기능에 대한 구체적인 설명이 본 발명의 요지를 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략한다.It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference numerals even though they are shown in different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
또한, 본 발명의 구성 요소를 설명하는 데 있어서, 제 1, 제 2, A, B, (a),(b) 등의 용어를 사용할 수 있다. 이러한 용어는 그 구성 요소를 다른 구성 요소와 구별하기 위한 것일 뿐, 그 용어에 의해 해당 구성 요소의 본질이나 차례 또는 순서 등이 한정되지 않는다. 어떤 구성 요소가 다른 구성요소에 "연결", "결합" 또는 "접속"된다고 기재된 경우, 그 구성 요소는 그 다른 구성요소에 직접적으로 연결되거나 또는 접속될 수 있지만, 각 구성 요소 사이에 또 다른 구성 요소가 "연결", "결합" 또는 "접속"될 수도 있다고 이해되어야 할 것이다.In describing the components of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected to or connected to the other component, It should be understood that an element may be "connected," "coupled," or "connected."
한편, 본 명세서에서 사용된 용어 "할로" 또는 "할로겐"은 다른 설명이 없는 한 불소, 염소, 브롬 및 요오드를 포함한다. The term " halo "or" halogen "as used herein, on the other hand, includes fluorine, chlorine, bromine and iodine unless otherwise specified.
본 발명에 사용된 용어 "알킬" 또는 "알킬기"는 다른 설명이 없는 한 1 내지 60의 탄소수를 가지며, 여기에 제한되는 것은 아니다. The term "alkyl" or "alkyl group ", as used herein, unless otherwise specified, has from 1 to 60 carbon atoms, but is not limited thereto.
본 발명에 사용된 용어 "알케닐" 또는 "알키닐"은 다른 설명이 없는 한 각각 2 내지 60의 탄소수의 이중결합 또는 삼중결합을 가지며, 여기에 제한되는 것은 아니다. The term "alkenyl" or "alkynyl ", as used herein, unless otherwise indicated, each have a double bond or triple bond of from 2 to 60 carbon atoms,
본 발명에 사용된 용어 "시클로알킬"은 다른 설명이 없는 한 3 내지 60의 탄소수를 갖는 고리를 형성하는 알킬을 의미하며, 여기에 제한되는 것은 아니다. The term "cycloalkyl" as used herein, unless otherwise specified, means alkyl which forms a ring having from 3 to 60 carbon atoms, but is not limited thereto.
본 발명에 사용된 용어 "알콕시기"는 다른 설명이 없는 한 1 내지 60의 탄소수를 가지며, 여기에 제한되는 것은 아니다. The term "alkoxy group" as used in the present invention has, unless otherwise stated, 1 to 60 carbon atoms, but is not limited thereto.
본 발명에 사용된 용어 "아릴기" 및 "아릴렌기"는 다른 설명이 없는 한 각각 6 내지 60의 탄소수를 가지며, 이에 제한되는 것은 아니다. The terms "aryl group" and "arylene group ", as used herein, unless otherwise specified, each have 6 to 60 carbon atoms, but are not limited thereto.
본 발명에서 아릴기 또는 아릴렌기는 단일환 또는 복소환의 방향족을 의미하며, 이웃한 치환기가 결합 또는 반응에 참여하여 형성된 방향족 링을 포함한다. 예컨대, 아릴기는 페닐기, 비페닐기, 플루오렌기, 스파이로플루오렌기일 수 있다. In the present invention, an aryl group or an arylene group means an aromatic group having a single ring or a heterocyclic ring, and the neighboring substituent includes an aromatic ring formed by bonding or participating in the reaction. For example, the aryl group may be a phenyl group, a biphenyl group, a fluorene group, or a spirobifluorene group.
본 명세서에서 사용된 용어 "헤테로알킬"은 다른 설명이 없는 한 하나 이상의 헤테로원자를 포함하는 알킬을 의미한다. 본 발명에 사용된 용어 "헤테로아릴기" 또는 "헤테로아릴렌기"는 다른 설명이 없는 한 각각 하나 이상의 헤테로원자를 포함하는 탄소수 3 내지 60의 아릴기 또는 아릴렌기를 의미하며, 여기에 제한되는 것은 아니며, 단일환뿐만 아니라 복소환을 포함하며, 이웃한 기가 결합하여 형성될 수도 있다.The term "heteroalkyl ", as used herein, unless otherwise indicated, means an alkyl comprising one or more heteroatoms. The term "heteroaryl group" or "heteroarylene group" as used in the present invention means an aryl or arylene group having 3 to 60 carbon atoms each containing at least one heteroatom, But includes a single ring as well as a heterocyclic ring and may be formed by bonding adjacent groups.
본 발명에 사용된 용어 "헤테로시클로알킬", "헤테로고리기"는 다른 설명이 없는 한 하나 또는 그 이상의 헤테로원자를 포함하고, 2 내지 60의 탄소수를 가지며, 단일환뿐만 아니라 복소환을 포함하며, 이웃한 기가 결합하여 형성될 수도 있다. 또한, "헤테로고리기"는 헤테로원자를 포함하는 지환족 및/또는 방향족을 의미할 수 있다.The term " heterocycloalkyl ", "heterocyclic group ", as used herein, unless otherwise indicated, includes one or more heteroatoms, has from 2 to 60 carbon atoms, , And neighboring groups may be combined with each other. Furthermore, the "heterocyclic group" may mean an alicyclic group and / or an aromatic group including a hetero atom.
본 명세서에서 사용된 용어 "헤테로원자"는 다른 설명이 없는 한 N, O, S, P 및 Si를 나타낸다. As used herein, the term "heteroatom " refers to N, O, S, P and Si, unless otherwise indicated.
다른 설명이 없는 한, 본 발명에 사용된 용어 "지방족"은 탄소수 1 내지 60의 지방족 탄화수소를 의미하며, "지방족고리"는 탄소수 3 내지 60의 지방족 탄화수소 고리를 의미한다. Unless otherwise stated, the term "aliphatic" as used herein means an aliphatic hydrocarbon having 1 to 60 carbon atoms and an "aliphatic ring" means an aliphatic hydrocarbon ring having 3 to 60 carbon atoms.
다른 설명이 없는 한, 본 발명에 사용된 용어 "포화 또는 불포화 고리"는 포화 또는 불포화 지방족고리 또는 탄소수 6 내지 60의 방향족고리 또는 헤테로고리를 의미한다.Unless otherwise indicated, the term "saturated or unsaturated ring" as used herein refers to a saturated or unsaturated aliphatic ring or an aromatic ring or hetero ring having 6 to 60 carbon atoms.
전술한 헤테로화합물 이외의 그 밖의 다른 헤테로화합물 또는 헤테로라디칼은 하나 이상의 헤테로원자를 포함하며, 여기에 제한되는 것은 아니다. Other hetero-compounds or hetero-radicals other than the above-mentioned hetero-compounds include, but are not limited to, one or more heteroatoms.
또한 명시적인 설명이 없는 한, 본 발명에서 사용된 용어 "치환 또는 비치환된"에서 "치환"은 중수소, 할로겐, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C1~C20의 알콕시기, C1~C20의 알킬아민기, C1~C20의 알킬티오펜기, C6~C20의 아릴티오펜기, C2~C20의 알케닐기, C2~C20의 알키닐기, C3~C20의 시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C20의 아릴기, C8~C20의 아릴알케닐기, 실란기, 붕소기, 게르마늄기, 및 C5~C20의 헤테로고리기로 이루어진 군으로부터 선택되는 1개 이상의 치환기로 치환됨을 의미하며, 이들 치환기에 제한되는 것은 아니다. One also no explicit description, the terms in the "unsubstituted or substituted", "substituted" is heavy hydrogen, a halogen, an amino group, a nitrile group, a nitro group, C 1 ~ C 20 alkyl group, C 1 ~ C for use in the present invention alkoxy group, C 1 ~ C 20 alkyl amine group of 20, C 1 ~ C 20 alkyl thiophene group, C 6 ~ C 20 aryl thiophene group, C 2 ~ C 20 alkenyl group, C 2 ~ C 20 alkynyl group, C 3 ~ C 20 cycloalkyl group, C 6 ~ C 60 aryl group, of a C 6 ~ C 20 substituted by deuterium aryl group, a C 8 ~ C 20 arylalkenyl group, a silane group, a boron of Means a group substituted with at least one substituent selected from the group consisting of a halogen atom, a cyano group, a germanium group, and a C 5 to C 20 heterocyclic group, and is not limited to these substituents.
도 1은 본 발명에 일 실시예에 따른 유기전기소자에 대한 예시도이다.1 is an illustration of an organic electroluminescent device according to an embodiment of the present invention.
도 1을 참조하면, 본 발명에 따른 유기전기소자(100)는 기판(110) 상에 형성된 제 1전극(120), 제 2전극(180) 및 제 1전극(110)과 제 2전극(180) 사이에 화학식 1로 표시되는 화합물을 포함하는 유기물층을 구비한다. 이때, 제 1전극(120)은 애노드(양극)이고, 제 2전극(180)은 캐소드(음극)일 수 있으며, 인버트형의 경우에는 제 1전극이 캐소드이고 제 2전극이 애노드일 수 있다.1, an organic
유기물층은 제 1전극(120) 상에 순차적으로 정공주입층(130), 정공수송층(140), 발광층(150), 전자수송층(160) 및 전자주입층(170)을 포함할 수 있다. 이때, 발광층(150)을 제외한 나머지 층들이 형성되지 않을 수 있다. 정공저지층, 전자저지층, 발광보조층(151), 버퍼층(141) 등을 더 포함할 수도 있고, 전자수송층(160) 등이 정공저지층의 역할을 할 수도 있을 것이다. The organic material layer may include a hole injecting layer 130, a hole transporting layer 140, a light emitting layer 150, an electron transporting layer 160, and an electron injecting layer 170 sequentially on the first electrode 120. At this time, the remaining layers except the light emitting layer 150 may not be formed. An electron blocking layer, a light emitting auxiliary layer 151, a buffer layer 141, and the like, and the electron transport layer 160 may serve as a hole blocking layer.
또한, 미도시하였지만, 본 발명에 따른 유기전기소자는 제 1전극과 제 2전극 중 적어도 일면 중 상기 유기물층과 반대되는 일면에 형성된 보호층을 더 포함할 수 있다. Also, although not shown, the organic electroluminescent device according to the present invention may further include a protective layer formed on at least one surface of the first electrode and the second electrode opposite to the organic material layer.
상기 유기물층에 적용되는 본 발명에 따른 화합물은 정공주입층(130), 정공수송층(140), 전자수송층(160), 전자주입층(170), 발광층(150)의 호스트 또는 도펀트 또는 캐핑층의 재료로 사용될 수 있다.The compound according to the present invention applied to the organic material layer may be used as a host or a dopant of the hole injection layer 130, the hole transport layer 140, the electron transport layer 160, the electron injection layer 170, .
본 발명의 일 실시예에 따른 유기전기발광소자는 PVD(physical vapor deposition) 방법을 이용하여 제조될 수 있다. 예컨대, 기판 상에 금속 또는 전도성을 가지는 금속 산화물 또는 이들의 합금을 증착시켜 양극(120)을 형성하고, 그 위에 정공주입층(130), 정공수송층(140), 발광층(150), 전자수송층(160) 및 전자주입층(170)을 포함하는 유기물층을 형성한 후, 그 위에 음극(180)으로 사용할 수 있는 물질을 증착시킴으로써 제조될 수 있다.The organic electroluminescent device according to an embodiment of the present invention can be manufactured using a physical vapor deposition (PVD) method. For example, the anode 120 is formed by depositing a metal or a conductive metal oxide or an alloy thereof on a substrate, and a hole injecting layer 130, a hole transporting layer 140, a light emitting layer 150, and an electron transporting layer 160 and an electron injection layer 170, and then depositing a material usable as the cathode 180 on the organic layer.
또한, 유기물층은 다양한 고분자 소재를 사용하여 증착법이 아닌 용액 공정 또는 솔벤트 프로세스(solvent process), 예컨대 스핀 코팅, 딥 코팅, 닥터 블레이딩, 스크린 프린팅, 잉크젯 프린팅 또는 열 전사법 등의 방법에 의하여 더 적은 수의 층으로 제조할 수 있다.본 발명에 따른 유기물층은 다양한 방법으로 형성될 수 있으므로, 그 형성방법에 의해 본 발명의 권리범위가 제한되는 것은 아니다.In addition, the organic material layer can be formed using a variety of polymer materials by a solution process other than a vapor deposition process or a solvent process such as spin coating, dip coating, doctor blading, screen printing, inkjet printing, The organic material layer according to the present invention can be formed by various methods, and therefore the scope of the present invention is not limited by the method of forming the organic material layer.
본 발명에 따른 유기전기소자는 사용되는 재료에 따라 전면 발광형, 후면 발광형 또는 양면 발광형일 수 있다.The organic electroluminescent device according to the present invention may be of a top emission type, a back emission type, or a both-sided emission type, depending on the material used.
또한, 본 발명에 따른 유기전기소자는 유기전기발광소자(OLED), 유기태양전지, 유기감광체(OPC), 유기트랜지스터(유기 TFT), 단색 또는 백색 조명용 소자 중 하나일 수 있다.The organic electroluminescent device according to the present invention may be one of an organic electroluminescent (OLED), an organic solar cell, an organic photoconductor (OPC), an organic transistor (organic TFT), and a monochromatic or white illumination device.
본 발명의 다른 실시예는 상술한 본 발명의 유기전기소자를 포함하는 디스플레이장치와, 이 디스플레이장치를 제어하는 제어부를 포함하는 전자장치를 포함할 수 있다. 이때, 전자장치는 현재 또는 장래의 유무선 통신단말일 수 있으며, 휴대폰 등의 이동 통신 단말기, PDA, 전자사전, PMP, 리모콘, 네비게이션, 게임기, 각종 TV, 각종 컴퓨터 등 모든 전자장치를 포함한다.Another embodiment of the present invention can include an electronic device including a display device including the above-described organic electronic device of the present invention and a control unit for controlling the display device. The electronic device may be a current or future wired or wireless communication terminal and includes all electronic devices such as a mobile communication terminal such as a mobile phone, a PDA, an electronic dictionary, a PMP, a remote controller, a navigation device, a game machine, various TVs, and various computers.
이하, 본 발명의 일 측면에 따른 화합물에 대하여 설명한다.Hereinafter, the compound according to one aspect of the present invention will be described.
본 발명의 일측면에 따른 화합물은 하기 화학식 (1)로 표시된다. A compound according to one aspect of the present invention is represented by the following formula (1).
<화학식 1> ≪ Formula 1 >
상기 화학식 1 에서,In Formula 1,
(1) Ar 1 및 Ar 2 는 각각 서로 독립적으로, 수소, 중수소, 삼중수소, 할로겐, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C1~C20의 알콕시기, C1~C20의 알킬아민기, C6~C60의 아릴아민기, C1~C20 의 알킬티오펜기, C6~C20의 아릴티오펜기, C2~C20의 알케닐기, C2~C20의 알키닐기, C3~C20의 시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기, C8~C20의 아릴알케닐기, 실란기, 붕소기, 게르마늄기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C 6 ~ C 60 의 아릴기; 수소, 중수소, 삼중수소, 할로겐기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C1~C20의 알킬아민기, C6~C60의 아릴아민기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기, C7~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C2~C60의 헤테로고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환되고 O, N ,S ,P 및 Si 중 적어도 하나의 헤테로원자를 포함하는 치환 또는 비치환된 C 2 ~ C 60 의 헤테로고리기; 수소, 중수소, 삼중수소, 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C 6 ~ C 30 의 아릴옥시기; C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기, C7~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C2~C60의 헤테로고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C 1 ~ C 50 의 알킬기; 및 수소, 중수소, 삼중수소, C1~C20의 알킬기, C2~C20의 알케닐기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기, C7~C20의 아릴알킬기 및 C8~C20의 아릴알케닐기로 이루어진 군에서 선택된 치환기로 치환된 실란기;이며,(1) Ar 1 and Ar 2 each independently represent hydrogen, deuterium, tritium, halogen, amino, nitrile, nitro, C 1 to C 20 alkyl, C 1 to C 20 alkoxy, C 1 ~ C 20 alkyl amine group, C 6 ~ C 60 aryl amine group, C 1 ~ C 20 alkyl thiophene group, C 6 ~ C 20 aryl thiophene group, C 2 ~ C 20 alkenyl group, C A C 2 to C 20 alkynyl group, a C 3 to C 20 cycloalkyl group, a C 6 to C 60 aryl group, a C 6 to C 60 aryl group substituted with deuterium, a C 8 to C 20 arylalkenyl group, a silane A C 6 to C 60 aryl group substituted or unsubstituted with a substituent selected from the group consisting of a halogen atom, a halogen atom, a boron group, a germanium group and a C 2 to C 60 heterocyclic group ; A halogen atom, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 1 to C 20 alkylamine group, a C 6 to C 20 alkenyl group, 60 arylamine group, C 6 ~ C 60 aryl group, of a C 6 ~ C 60 substituted by deuterium aryl, arylalkenyl a C 7 ~ C 20 aryl group, C 8 ~ C 20 of the group, C 2 ~ A substituted or unsubstituted C 2 to C 6 alkyl group which is substituted or unsubstituted with a substituent selected from the group consisting of a C 60 heterocyclic group, a nitrile group and an acetylene group, and contains at least one heteroatom selected from O, N, S, P and Si A heterocyclic group having 1 to 60 carbon atoms ; A halogen atom, an amino group, a nitrile group, a nitro group, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 3 to C 30 A substituent selected from the group consisting of a cycloalkyl group, a C 2 to C 30 heterocycloalkyl group, a C 6 to C 60 aryl group, a C 6 to C 60 aryl group substituted with deuterium, and a C 2 to C 60 heterocyclic group aryloxy substituted or unsubstituted C 6 ~ C 30; C 1 ~ alkenyl group of the C 20 alkyl group, C 2 ~ C 20 of, C 1 ~ C 20 alkoxy group, C 6 ~ aryl group of C 60 aryl group, a C 6 ~ C 60 substituted with deuterium, C 7 alkyl ~ C 20 aryl group, C 8 ~ C 20 aryl alkenyl group, C 2 ~ C 60 of the hetero ring group, nitrile group and acetylene group unsubstituted or substituted with a substituent selected from the group consisting of C 1 ~ C 50 ; And hydrogen, deuterium, tritium, C 1 ~ C 20 alkyl group, C 2 ~ C 20 alkenyl group, C aryl group of 6 ~ C 60, of a C 6 ~ C 60 substituted by deuterium aryl group, C 7 ~ of the silane group substituted with a substituent selected from an aryl alkyl group and an aryl group consisting of C 8 ~ C 20 alkenyl group of C 20; Lt;
(2) R 1 내지 R 12 는 각각 서로 독립적으로 수소; 중수소; 삼중수소; 수소, 중수소, 삼중수소, 할로겐기, C1~C60의 알킬기, C1~C60의 알콕시기, C1~C60의 알킬아민기, C5~C60의 아릴아민기, C1~C60의 알킬티오펜기, C6~C60의 아릴 티오펜기, C2~C60의 알케닐기, C2~C60의 알키닐기, C3~C60의 시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기, C8~C60의 아릴알케닐기, 치환 또는 비치환된 실란기, 치환 또는 비치환된 붕소기, 치환 또는 비치환된 게르마늄기 및 치환 또는 비치환된 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C 6 ~ C 60 의 아릴기; C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기, C7~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C2~C60의 헤테로고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C 1 ~ C 50 의 알킬기; 수소, 중수소, 삼중수소, 할로겐기, C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C6~C20의 아릴기, 중수소로 치환된 C6~C60의 아릴기, C7~C20의 아릴알킬기, C8~C20의 아릴알케닐기, C2~C60의 헤테로고리기, 니트릴기 및 아세틸렌기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C 2 ~ C 40 의 알케닐기; 수소, 중수소, 삼중수소, 할로겐기, 아미노기, 니트릴기, 니트로기, C1~C20 의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C30의 시클로알킬기, C2~C30의 헤테로시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C 1 ~ C 30 의 알콕시기; 수소, 중수소, 삼중수소, 할로겐기, 니트릴기, 니트로기, C1~C60의 알킬기, C1~C60의 알콕시기, C1~C60의 알킬아민기, C6~C60의 아릴아민기, C1~C60의 알킬티오기, C2~C60의 알케닐기, C2~C60의 알키닐기, C3~C60의 시클로알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기, 치환 또는 비치환된 실란기, 치환 또는 비치환된 붕소기, 치환 또는 비치환된 게르마늄기 및 치환 또는 비치환된 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환되고 O, N ,S ,P 및 Si 중 적어도 하나의 헤테로원자를 포함하는 C 2 ~ C 60 의 헤테로고리기; C6~C60의 방향족고리와 C3~C60의 지방족고리의 축합 고리기; C1~C60의 알킬기, C2~C60의 알케닐기, C6~C60의 아릴기, C8~C60의 아릴알케닐기 및 C2~C60 의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 아민기; 니트로기 ; 니트릴기 ; 아미드기; 및 실란기 ; 로 이루어진 군에서 선택되며,(2) R 1 To R & lt ; 12 & gt ; are each independently of the other hydrogen ; Deuterium ; Tritium ; Hydrogen, deuterium, tritium, a halogen group, C 1 ~ C 60 alkyl group, C 1 ~ C 60 alkoxy group, C 1 ~ C 60 alkyl amine group, C 5 ~ C 60 of the arylamine group, C 1 ~ for C 60 alkylthiophene group, C 6 ~ C 60 aryl thiophene group, C 2 ~ C 60 alkenyl group, C 2 ~ C 60 alkynyl group, C 3 ~ C 60 cycloalkyl group, C 6 ~ C 60 aryl group, of a C 6 ~ C 60 substituted by deuterium aryl group, an arylalkenyl group of C 8 ~ C 60, a substituted or unsubstituted silane group, a substituted or unsubstituted boron group, a substituted or unsubstituted germanium And a substituted or unsubstituted C 2 to C 60 heterocyclic group, which is substituted or unsubstituted with a substituent selected from the group consisting of A C 6 to C 60 aryl group ; C 1 ~ alkenyl group of the C 20 alkyl group, C 2 ~ C 20 of, C 1 ~ C 20 alkoxy group, C 6 ~ aryl group of C 60 aryl group, a C 6 ~ C 60 substituted with deuterium, C 7 alkyl ~ C 20 aryl group, C 8 ~ C 20 aryl alkenyl group, C 2 ~ C 60 of the hetero ring group, nitrile group and acetylene group unsubstituted or substituted with a substituent selected from the group consisting of C 1 ~ C 50 ; Hydrogen, deuterium, tritium, a halogen group, C 1 ~ C 20 alkyl group, C 2 ~ C 20 alkenyl group, C 1 ~ C 20 alkoxy group, C 6 ~ C 20 aryl group, a substituted C with deuterium in Substituted or unsubstituted with a substituent selected from the group consisting of a C 6 to C 60 aryl group, a C 7 to C 20 arylalkyl group, a C 8 to C 20 arylalkenyl group, a C 2 to C 60 heterocyclic group, a nitrile group and an acetylene group, unsubstituted C 2 ~ C 40 alkenyl group; A halogen atom, an amino group, a nitrile group, a nitro group, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 1 to C 20 alkoxy group, a C 3 to C 30 A substituent selected from the group consisting of a cycloalkyl group, a C 2 to C 30 heterocycloalkyl group, a C 6 to C 60 aryl group, a C 6 to C 60 aryl group substituted with deuterium, and a C 2 to C 60 heterocyclic group A substituted or unsubstituted C 1 to C 30 alkoxy group ; Hydrogen, deuterium, tritium, a halogen group, nitrile group, nitro group, C 1 ~ C 60 alkyl group, C 1 ~ C 60 alkoxy group, C 1 ~ C 60 alkyl amine group, C 6 ~ aryl of C 60 an amine group, C 1 ~ C import of 60 alkylthio, C 2 ~ C 60 alkenyl group, C 2 ~ C 60 alkynyl group, C of 3 ~ C 60 cycloalkyl group, C 6 ~ aryl group, a heavy hydrogen of the C 60 of the substituted C 6 ~ C 60 aryl group, a substituted or unsubstituted silane group, a substituted or unsubstituted boron group, a substituted or unsubstituted germanium group, and a group heterocyclic substituted or unsubstituted C 2 ~ C 60 ring to A C 2 to C 60 heterocyclic group which is substituted or unsubstituted with a substituent selected from the group consisting of O, N, S, P and Si and contains at least one hetero atom ; A condensed ring group of an aromatic ring of C 6 to C 60 and an aliphatic ring of C 3 to C 60 ; A C 1 to C 60 alkyl group, a C 2 to C 60 alkenyl group, a C 6 to C 60 aryl group, a C 8 to C 60 arylalkenyl group And a heterocyclic group having 2 to 60 carbon atoms, which is substituted or unsubstituted with a substituent selected from the group consisting of An amine group ; A nitro group ; A nitrile group ; Amide group; And a silane group ; , ≪ / RTI >
(3) R 6 과 R 7 , R 9 와 R 10 , R 10 과 R 11 , R 11 과 R 12 각각은 이웃한 기와 서로 결합하여 포화 또는 불포화 고리를 형성할 수 있다.(3) R 6 and R 7 , R 9 and R 10 , R 10 and R 11 , and R 11 and R 12 each may combine with adjacent groups to form a saturated or unsaturated ring.
구체적으로, 상기 화학식 1로 표시되는 화합물은 하기 화학식 (2) 내지 화학식(6) 중 하나일 수 있다.Specifically, the compound represented by the formula (1) may be one of the following formulas (2) to (6).
보다 구체적으로, 상기 화학식 1로 표시되는 화합물은 하기 화합물 P1-1 내지 P6-46 중 하나일 수 있다. More specifically, the compound represented by Formula 1 may be one of the following compounds P1-1 to P6-46.
이하에서, 본 발명에 따른 화학식 1로 표시되는 화합물의 합성예 및 유기전기소자의 제조예에 관하여 실시예를 들어 구체적으로 설명하지만, 본 발명이 하기의 실시예로 한정되는 것은 아니다.
Hereinafter, the synthesis examples of the compound represented by the formula (1) according to the present invention and the production examples of the organic electric device will be specifically described with reference to examples, but the present invention is not limited to the following examples.
합성예Synthetic example
본 발명에 따른 화합물(final products)은 하기 반응식1과 같이 Sub C 와 Sub 1 내지 Sub 5 중 하나와 반응하여 제조된다.The final products according to the present invention are prepared by reacting with one of Sub C and Sub 1 to Sub 5 as shown in Scheme 1 below.
<반응식 1><Reaction Scheme 1>
SubSub C 합성법 C synthetic method
Sub C는 하기 반응식에 의해 제조될 수 있다.
Sub C can be prepared by the following reaction formula.
SubSub C C 합성예Synthetic example (1) (One)
<반응식 2><Reaction Scheme 2>
Round flask에 C-1-1 (1당량), C-1-2 (1당량) 해당되는 양과 톨루엔에 혼합한 후에 Pd2(dba)3 (0.05당량), (t-Bu)3P (0.1당량), NaOt-Bu (3당량)에 해당되는 양을 각각 첨가한 후, 100℃에서 8시간 교반 환류시키고, MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Pd 2 (dba) 3 (0.05 eq.), (T-Bu) 3 P (0.1 equivalent) was added to the corresponding amount of toluene followed by addition of C-1-1 (1 equivalent) equivalents), NaO t -Bu (after 3 eq.) were added to an amount corresponding to, the reflux in 100 ℃ stirring for 8 hours, extracted with water MC and the organic layer was dried with MgSO 4 and concentrated to produce organic silicagel column And recrystallized to obtain the product.
SubSub C C 합성예Synthetic example (2) (2)
<반응식 3><Reaction Scheme 3>
상기 반응식 3에서 중간체 및 최종 화합물 C-2는 다음과 같은 방법에 의해 제조하였다.
In Scheme 3, the intermediate and final compound C-2 were prepared by the following method.
(1) 중간체 C-2-3의 합성(1) Synthesis of intermediate C-2-3
Round flask에 C-2-1 (1당량), C-2-2(1당량) 해당되는 양과 PdCl2(PPh3)2 (0.03당량), CuI (0.03당량), K2CO3 (3당량)에 해당되는 양을 DMF에 혼합시킨 후, 100℃ 에서 4시간 교반 환류시키고, MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
To the round flask was added the corresponding amount of C-2-1 (1 equivalent), C-2-2 (1 equivalent), PdCl 2 (PPh 3 ) 2 (0.03 eq.), CuI (0.03 eq.), K 2 CO 3 ) Were mixed in DMF, and the mixture was refluxed for 4 hours at 100 ° C., extracted with MC and water. The organic layer was dried with MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain a product.
(2) 중간체 C-2-4의 합성(2) Synthesis of intermediate C-2-4
Round flask에 C-2-3(1당량)과 KOt-Bu (2당량)에 해당되는 양과 NMP(N-Methylpyrrolidone)에 혼합해서 상온에서 5시간 교반시킨다. MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻었다.
Add the mixture of C-2-3 (1 equivalent) and KOt-Bu (2 equivalents) and NMP (N-Methylpyrrolidone) to a round flask and stir at room temperature for 5 hours. After extraction with MC and water, the organic layer was dried with MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain the product.
(3) 최종 화합물 C-2의 합성(3) Synthesis of Final Compound C-2
Round flask에 C-2-4 (1당량), C-2-5(1당량) 해당되는 양과 톨루엔에 혼합 후에 Pd2(dba)3 (0.05당량), (t-Bu)3P (0.1당량), NaOt-Bu (3당량)에 해당되는 양을 각각 첨가하고, 100℃에서 8시간 교반 환류시킨 후, MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Pd 2 (dba) 3 (0.05 eq.), (T-Bu) 3 P (0.1 eq.) In toluene followed by the addition of C-2-4 (1 eq.) And C- 2-5 ) And NaO t -Bu (3 equivalents), respectively. The mixture was refluxed at 100 ° C for 8 hours, extracted with MC and water. The organic layer was dried over MgSO 4 and concentrated. The product is recrystallized.
SubSub C C 합성예Synthetic example (3) (3)
<반응식 4><Reaction Scheme 4>
상기 반응식 4에서 중간체 및 최종 화합물 C-3은 하기 합성방법으로 제조할 수 있다.
In Scheme 4, the intermediate and final compound C-3 can be prepared by the following synthesis method.
(1) 중간체 C-3-3의 합성(1) Synthesis of intermediate C-3-3
Round flask에 C-3-1(1당량), C-3-2(1당량) 해당되는 양과 Pd(OAc)2 (0.05당량), DtBPF(0.1당량), K2CO3(2.5당량)에 해당되는 양을 NMP(N-Methylpyrrolidone)에 혼합시키고, 120℃에서 12시간 교반 환류시킨 후 MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Round flask to C-3-1 (1 eq.), C-3-2 (1 eq.) Quantity and Pd (OAc) 2 which is the (0.05 eq.), D t BPF (0.1 eq), K 2 CO 3 (2.5 eq. ) Was mixed with NMP (N-Methylpyrrolidone), and the mixture was refluxed at 120 ° C for 12 hours. The mixture was refluxed for 12 hours. The mixture was extracted with MC and water. The organic layer was dried with MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized .
(2) 최종 화합물 C-3의 합성(2) Synthesis of Final Compound C-3
Round flask에 C-3-3 (1당량), C-3-4(1당량) 해당되는 양과 톨루엔에 혼합 후에 Pd2(dba)3 (0.05당량), (t-Bu)3P (0.1당량), NaOt-Bu (3당량)에 해당되는 양을 각각 첨가하고, 100℃에서 8시간 교반 환류시킨 후. MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Pd 2 (dba) 3 (0.05 eq.), (T-Bu) 3 P (0.1 eq.) In toluene followed by the addition of C-3-3 (1 eq.) And C- ) And NaO t- Bu (3 equivalents), respectively, and the mixture was refluxed at 100 ° C for 8 hours. After extraction with MC and water, the organic layer is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
SubSub C C 합성예Synthetic example (4) (4)
<반응식 5><Reaction Scheme 5>
상기 반응식 5에서 중간체 및 최종 화합물 C-4는 하기 방법에 의해 합성하였다.
In the above Reaction Scheme 5, the intermediate and the final compound C-4 were synthesized by the following method.
(1) 중간체 C-4-3의 합성(1) Synthesis of intermediate C-4-3
Round flask에 C-4-1 (1당량)을 THF에 혼합한 후, -40℃로 냉각하면서 교반한다. C-4-2 (3당량) 해당되는 양을 천천히 적가하고, -40℃에서 3시간 교반한다. 반응이 완료되면 상온으로 올린 후, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축 하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
C-4-1 (1 eq.) Is mixed with THF in a round flask, followed by stirring while cooling to -40 ° C. Add the appropriate amount of C-4-2 (3 equivalents) slowly and stir at -40 ° C for 3 hours. After the reaction is completed, the reaction mixture is warmed to room temperature, and the organic layer extracted with MC and water is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain a product.
(2) 최종 화합물 C-4의 합성(2) Synthesis of Final Compound C-4
Round flask에 C-4-3 (1당량), C-4-4(1당량) 해당되는 양과 톨루엔에 혼합한 후에 Pd2(dba)3 (0.05당량), (t-Bu)3P (0.1당량), NaOt-Bu (3당량)에 해당되는 양을 각각 첨가하고, 100℃에서 8시간 교반 환류시킨 후. MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Pd 2 (dba) 3 (0.05 eq.), (T-Bu) 3 P (0.1 eq.) Were added to the round flask after mixing with C- 4-3 (1 eq.) And C- 4-4 And NaO t- Bu (3 eq.), Respectively, and the mixture was refluxed at 100 ° C for 8 hours. The organic layer extracted with MC and water is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
상기 합성예를 이용하여 합성한 Sub C 화합물의 예시는 아래와 같으나, 이에 한정되는 것은 아니며, 이들의 FD-MS는 하기 표 1과 같다. Examples of the Sub C compound synthesized using the above Synthesis Example are shown below, but the present invention is not limited thereto, and their FD-MS is shown in Table 1 below.
반응식 1에서 반응 물질 중 하나인 S1은 하기와 같은 방법에 의해 제조하였다.
One of the reactants in Scheme 1, S1, was prepared as follows.
S 1 합성법S 1 synthesis method
반응식 S 1은 하기 반응식 6의 반응경로에 의해 합성할 수 있다.Reaction Scheme S 1 can be synthesized by the reaction path of Scheme 6 below.
<반응식 6><Reaction Scheme 6>
상기 반응식 6에서 중간체 S-1-2와 최종 화합물 S1은 다음과 같은 방법에 의해 합성하였다.
In Scheme 6, intermediate S-1-2 and final compound S1 were synthesized by the following method.
(1) 중간체 S-1-2의 합성(1) Synthesis of intermediate S-1-2
Round flask에 S-1-1 (1당량), 아릴할라이드 화합물 (1당량) 해당되는 양과 톨루엔에 혼합 후에 Pd2(dba)3 (0.05당량), (t-Bu)3P (0.1당량), NaOt-Bu (3당량)에 해당되는 양을 각각 첨가하고, 100℃에서 8시간 교반 환류시킨 후. MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Pd 2 (dba) 3 (0.05 eq.), (T-Bu) 3 P (0.1 eq.) Were added to the round flask following the addition of S-1-1 (1 eq.) And aryl halide compound NaO t- Bu (3 eq.), Respectively, and the mixture was refluxed at 100 ° C for 8 hours. The organic layer extracted with MC and water is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(2) S 1의 합성(2) Synthesis of S 1
Round flask에 S-1-2(1당량), bis(pinacolato)diboron (1.3당량)을 DMF에 혼합한 후, PdCl2(DPPF) (0.03당량), AcOK (3당량)을 각각 첨가하고, 130℃에서 3시간 교반 환류시키고, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
S-1-2 (1 eq.) And bis (pinacolato) diboron (1.3 eq.) Were mixed in DMF and then PdCl 2 (DPPF) (0.03 eq.) And AcOK The mixture was stirred at reflux for 3 hours. The organic layer extracted with MC and water was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain the product.
반응식 1에서 반응 물질 중 하나인 S2는 하기와 같은 방법에 의해 제조하였다.S2, one of the reactants in Scheme 1, was prepared by the following method.
S 2 합성법S 2 synthesis method
반응식 S 2는 하기 반응식 7의 반응경로에 의해 합성할 수 있다.Scheme S 2 can be synthesized by the reaction path of the following reaction formula (7).
<반응식 7><Reaction Scheme 7>
(1) 중간체 S-2-1의 합성(1) Synthesis of intermediate S-2-1
Round flask에 boronic acid 화합물 (1 당량), nitro 화합물 (1당량)에 해당하는 양과 THF에 혼합한 후에 Pd(PPh3)4 (0.05당량), NaOH 수용액을 첨가하고, 70℃에서 12시간 교반 환류시키고, MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.The Round flask boronic acid compound (1 equivalent), nitro compound (1 eq) that after mixing volume and THF was added Pd (PPh 3) 4 (0.05 equiv.), NaOH aqueous solution, and reflux was stirred for 12 hours at 70 ℃ to the After extraction with MC and water, the organic layer is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(2) 중간체 S-2-2의 합성(2) Synthesis of intermediate S-2-2
Round flask에 S-2-1 (1당량), TPP (3당량)에 해당하는 양과 dichlorobenzene에 혼합한 후에 130℃에서 24시간 교반 환류시키고, 감압하여 dichlorobenzene을 제거한 후, MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.After mixing dichlorobenzene and S-2-1 (1 equivalent) and S-2-1 (1 equivalent) in a round flask, dichlorobenzene was removed by stirring at 130 ° C for 24 hours under reduced pressure, and then extracted with MC and water. Dried over MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(3) 중간체 S-2-3의 합성(3) Synthesis of intermediate S-2-3
Round flask에 S-2-2 (1당량), iodo 화합물 (1당량) 해당되는 양과 톨루엔에 혼합한 후에 Pd2(dba)3 (0.05당량), (t-Bu)3P (0.1당량), NaOt-Bu (3당량)에 해당되는 양을 각각 첨가하고, 100℃에서 8시간 교반 환류시킨 후. MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Pd 2 (dba) 3 (0.05 eq.), (T-Bu) 3 P (0.1 eq.) After mixing with the corresponding amount of S-2-2 (1 eq.) And iodo NaO t- Bu (3 eq.), Respectively, and the mixture was refluxed at 100 ° C for 8 hours. The organic layer extracted with MC and water is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(4) 최종 화합물 S 2의 합성(4) Synthesis of final compound S 2
Round flask에 S-2-3(1당량), bis(pinacolato)diborn (1.3당량)을 DMF에 혼합한 후, PdCl2(DPPF) (0.03당량), AcOK (3당량)을 각각 첨가하고, 130℃에서 3시간 교반 환류시킨 후, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
S-2-3 (1 eq.) And bis (pinacolato) diborn (1.3 eq.) In DMF were added to the round flask followed by PdCl 2 (DPPF) (0.03 eq.) And AcOK After refluxing for 3 hrs. At room temperature, the organic layer extracted with MC and water was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain the product.
반응식 1에서 반응 물질 중 하나인 S3는 하기와 같은 방법에 의해 제조하였다.One of the reactants in Scheme 1, S3, was prepared as follows.
S 3 합성법S 3 synthesis method
반응식 S 3는 하기 반응식 8의 반응경로에 의해 합성될 수 있다.Scheme 3 can be synthesized by the reaction pathway of Scheme 8 below.
<반응식 8><Reaction Scheme 8>
상기 반응식 8에서 중간체 및 최종 화합물인 S3는 하기 방법에 의해 합성하였다.
In the above Reaction Scheme 8, the intermediate and the final compound S3 were synthesized by the following method.
(1) 중간체 S-3-1의 합성 (1) Synthesis of intermediate S-3-1
Round flask에 boronic acid 화합물 (1 당량), nitro 화합물 (1당량)에 해당하는 양과 THF에 혼합한 후에 Pd(PPh3)4 (0.05당량), NaOH 수용액을 첨가하고, 70℃에서 12시간 교반 환류시킨 후, MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
The Round flask boronic acid compound (1 equivalent), nitro compound (1 eq) that after mixing volume and THF was added Pd (PPh 3) 4 (0.05 equiv.), NaOH aqueous solution, and reflux was stirred for 12 hours at 70 ℃ to the After extraction with MC and water, the organic layer is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(2) 중간체 S-3-2의 합성 (2) Synthesis of intermediate S-3-2
Round flask에 S-3-1 (1당량), TPP (3당량)에 해당하는 양과 dichlorobenzene에 혼합한 후에 140℃ 내지 160℃에서 24시간 교반환류시키고, 감압하여 dichlorobenzene을 제거한 후, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축 하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
The mixture was mixed with dichlorobenzene in an amount corresponding to S-3-1 (1 equivalent) and TPP (3 equivalents) in a round flask and then refluxed with stirring at 140 to 160 ° C for 24 hours. After removing dichlorobenzene by reduced pressure, The organic layer is dried over MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(3) 중간체 S-3-3의 합성 (3) Synthesis of intermediate S-3-3
Round flask에 S-3-2 (1당량), Iodo 화합물(1당량) 해당되는 양과 톨루엔에 혼합한 후에 Pd2(dba)3 (0.05당량), (t-Bu)3P (0.1당량), NaOt-Bu (3당량)에 해당되는 양을 각각 첨가하고, 100℃에서 8시간 교반 환류시킨 후. MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Pd 2 (dba) 3 (0.05 eq.), (T-Bu) 3 P (0.1 eq.) After mixing with the appropriate amount of S-3-2 (1 eq.) And Iodo NaO t- Bu (3 eq.), Respectively, and the mixture was refluxed at 100 ° C for 8 hours. The organic layer extracted with MC and water is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(4) 최종 화합물 S 3의 합성(4) Synthesis of Final Compound S 3
Round flask에 S-3-3(1당량), bis(pinacolato)diboron (1.3당량)을 DMF에 혼합한 후, PdCl2(DPPF) (0.03당량), AcOK (3당량)을 각각 첨가하고, 130℃에서 3시간 교반 환류시킨 후, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
S-3-3 (1 eq.) And bis (pinacolato) diboron (1.3 eq.) Were mixed in DMF and then PdCl 2 (DPPF) (0.03 eq.) And AcOK After refluxing for 3 hrs. At room temperature, the organic layer extracted with MC and water was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain the product.
반응식 1에서 반응 물질 중 하나인 S4는 하기와 같은 방법에 의해 제조하였다.One of the reactants in Scheme 1, S4, was prepared as follows.
S 4 합성법S 4 synthesis method
반응식 S 4는 하기 반응식 9의 반응경로에 의해 합성될 수 있다.Scheme 4 can be synthesized by the reaction path of Scheme 9 below.
<반응식 9><Reaction Scheme 9>
상기 반응식 9에서, 중간체 및 최종 화합물 S4는 하기 방법으로 제조하였다.
In the above Reaction Scheme 9, the intermediate and the final compound S4 were prepared in the following manner.
(1) 중간체 S-4-1의 합성(1) Synthesis of intermediate S-4-1
Round flask에 boronic acid 화합물 (1 당량), nitro 화합물 (1당량)에 해당하는 양과 THF에 혼합한 후에 Pd(PPh3)4 (0.05당량), NaOH 수용액을 첨가하고, 70℃에서 12시간 교반 환류시킨 후, MC와 물로 추출한 후 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
The Round flask boronic acid compound (1 equivalent), nitro compound (1 eq) that after mixing volume and THF was added Pd (PPh 3) 4 (0.05 equiv.), NaOH aqueous solution, and reflux was stirred for 12 hours at 70 ℃ to the After extraction with MC and water, the organic layer is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(2) 중간체 S-4-2의 합성(2) Synthesis of intermediate S-4-2
Round flask에 S-4-1 (1당량), TPP (3당량)에 해당하는 양과 dichlorobenzene에 혼합한 후에 130℃에서 24시간 교반환류시키고, 감압하여 dichlorobenzene을 제거한 후, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축 하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
After mixing dichlorobenzene with S-4-1 (1 equivalent) and S-4-1 (1 equivalent) in a round flask, the mixture was refluxed at 130 ° C for 24 hours under reduced pressure and dichlorobenzene was removed. MC and water were extracted with MgSO 4 , dried and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(3) 중간체 S-4-3의 합성(3) Synthesis of intermediate S-4-3
Round flask에 S-4-2 (1당량), Iodo 화합물(1당량) 해당되는 양과 톨루엔에 혼합한 후에 Pd2(dba)3 (0.05당량), (t-Bu)3P (0.1당량), NaOt-Bu (3당량)에 해당되는 양을 각각 첨가하고, 100℃에서 8시간 교반 환류시킨 후. MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Pd 2 (dba) 3 (0.05 eq.), (T-Bu) 3 P (0.1 eq.) After mixing with the corresponding amount of S-4-2 (1 eq.) And Iodo NaO t- Bu (3 eq.), Respectively, and the mixture was refluxed at 100 ° C for 8 hours. The organic layer extracted with MC and water is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(4) 최종 화합물 S (4) Final compound S 4 의4 of 합성 synthesis
Round flask에 S-3-3(1당량), bis(pinacolato)diboron (1.3당량)을 DMF에 혼합한 후, PdCl2(DPPF) (0.03당량), AcOK (3당량)을 각각 첨가하고, 130℃에서 3시간 교반 환류시킨 후, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
S-3-3 (1 eq.) And bis (pinacolato) diboron (1.3 eq.) Were mixed in DMF and then PdCl 2 (DPPF) (0.03 eq.) And AcOK After refluxing for 3 hrs. At room temperature, the organic layer extracted with MC and water was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain the product.
반응식 1에서 반응 물질 중 하나인 S5는 하기와 같은 방법에 의해 제조하였다.One of the reactants in Scheme 1, S5, was prepared as follows.
S 5 합성법S 5 synthetic method
반응식 S 5 는 하기 반응식 10의 반응경로에 의해 합성될 수 있다.Scheme 5 can be synthesized by the reaction path of Scheme 10 below.
<반응식 10><Reaction formula 10>
상기 반응식 10에서, 중간체 및 최종 화합물 S5는 하기와 같은 방법으로 제조하였다.
In Scheme 10, the intermediate and the final compound S5 were prepared as follows.
(1) 중간체 S-5-1의 합성(1) Synthesis of intermediate S-5-1
Nitro 화합물 (1당량), Triphenylphosphine (2.5당량), o-Dichlorobenzene 을 넣은 후에 180℃로 환류하였다. 반응이 완료되면 상온으로 냉각시킨 후에 메틸렌클로라이드와 물을 사용하여 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻었다.
Nitro compound (1 eq.), Triphenylphosphine (2.5 eq.) And o-Dichlorobenzene were placed and then refluxed to 180 ° C. After the reaction was completed, the reaction mixture was cooled to room temperature, and the organic layer was extracted with methylene chloride and water. The organic layer was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized.
(2) 중간체 S-5-2의 합성(2) Synthesis of intermediate S-5-2
Round flask에 S-5-1 (1당량), Iodo 화합물(1당량) 해당되는 양과 톨루엔에 혼합 후에 Pd2(dba)3 (0.05당량), (t-Bu)3P (0.1당량), NaOt-Bu (3당량)에 해당되는 양을 각각 첨가하고, 100℃에서 8시간 교반 환류시킨 후. MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
Pd 2 (dba) 3 (0.05 eq.), (T-Bu) 3 P (0.1 eq.) And NaO (0.1 eq.) Were added to the round flask following the addition of S-5-1 (1 eq.) And Iodo t- Bu (3 eq.), respectively, and the mixture was refluxed at 100 ° C for 8 hours. The organic layer extracted with MC and water is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(3) 중간체 S-5-3의 합성(3) Synthesis of intermediate S-5-3
Round flask에 S-5-2 (1 당량), NBS (1당량)에 해당하는 양과 MC에 혼합한 후에 상온에서 24시간 교반 환류시킨 후, 감압하여 dichlorobenzene을 제거하고, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
After mixing with an amount of S-5-2 (1 equivalent) and NBS (1 equivalent) in a round flask, the reaction mixture was refluxed for 24 hours at room temperature and then reduced in pressure to remove dichlorobenzene. The organic layer extracted with MC and water was washed with MgSO 4 , dried and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product.
(4) 최종 화합물 S (4) Final compound S 5 의5 of 합성 synthesis
Round flask에 S-5-3(1당량), bis(pinacolato)diboron (1.3당량)을 DMF에 혼합한 후, PdCl2(DPPF) (0.03당량), AcOK (3당량)을 각각 첨가하고, 130℃에서 3시간 교반 환류시킨 후, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다.
PdCl 2 (DPPF) (0.03 eq.) And AcOK (3 eq.) Were added to the round flask, followed by addition of S-5-3 (1 eq.) And bis (pinacolato diboron After refluxing for 3 hrs. At room temperature, the organic layer extracted with MC and water was dried over MgSO 4 and concentrated. The resulting organic material was purified by silicagel column and recrystallized to obtain the product.
한편, S 1 내지 S 5의 합성법을 이용하여 합성한 화합물은 아래와 같으나, 이는 예시적인 것으로 이에 한정되는 것은 아니다. 하기 화학식에서 B(pin)은 이다.
On the other hand, the compounds synthesized by the synthesis method of S 1 to S 5 are as follows, but the present invention is not limited thereto. B (pin) in the following formula to be.
_ _
상기 화합물 ST 1-1 내지 ST 5-13의 FD-MS는 하기표 2와 같다.FD-MS of the compounds ST 1-1 to ST 5-13 are shown in Table 2 below.
반응식 1에 의해 최종 화합물을 합성하는 방법은 다음과 같다.A method for synthesizing the final compound according to Scheme 1 is as follows.
최종 화합물 The final compound P1P1 내지 To P6P6 합성 예시 Synthetic example
Round flask에 S1 ~ S5 화합물 (1 당량), Sub C 화합물 (1당량)에 해당하는 양과 THF에 혼합한 후에 Pd(PPh3)4 (0.05당량), NaOH 수용액을 첨가하고, 70℃에서 12시간 교반 환류시킨 후, MC와 물로 추출한 유기층을 MgSO4로 건조하고 농축하여 생성된 유기물을 silicagel column 및 재결정하여 생성물을 얻는다. 얻어진 최종 화합물 P1-1 내지 P6-46의 FD-MS는 하기 표 3과 같다.S1 ~ S5 compound (1 equivalent), Sub C compound (1 eq.) Pd (PPh 3) After mixing volume and THF for the 4 (0.05 eq.), 12 hours at the addition of NaOH aqueous solution, 70 ℃ the Round flask After stirring and refluxing, the organic layer extracted with MC and water is dried with MgSO 4 and concentrated. The resulting organic material is purified by silicagel column and recrystallized to obtain the product. FD-MS of the obtained final compounds P1-1 to P6-46 are shown in Table 3 below.
한편, 상기에서는 화학식 1로 표시되는 본 발명의 예시적 합성예를 설명하였지만, 이들은 모두 Suzuki cross-coupling 반응, Miyaura boration 반응 및 Buchwald-Hartwig cross coupling 반응 등에 기초한 것으로 구체적 합성예에 명시된 치환기 이외에 화학식 1에 정의된 다른 치환기(Ar1 , Ar2, R1 내지 R12 등의 치환기)가 결합되더라도 상술한 반응들이 진행함에 영향을 미치지 못한다. 예컨대, 반응식 7에서 S-2-1 생성단계, 반응식 8에서 S-3-1 생성단계는 Suzuki cross-coupilng 반응에 기초한 것이며, 반응식 2에서 C-1 생성단계, 반응식 3에서 C-2 생성단계, 반응식 4에서 C3 생성단계, 반응식 5에서 C4 생성단계, 반응식 6에서 S-1-2 생성단계, 반응식 7에서 S-2-3 생성단계, 반응식 8에서 S-3-3 생성단계, 반응식 9에서 S-4-3 생성단계, 반응식 10에서 S-5-2 생성단계 등은 모두 Buchwald-Hartwig cross coupling 반응에 기초한 것이며, 반응식 6에서 S 1 생성단계, 반응식 7에서 S 2 생성단계, 반응식 8에서 S 3 생성단계, 반응식 9에서 S 4 생성단계, 반응식 10에서 S 5 생성단계 등은 모두 Miyaura boration 반응에 기초한 것이다. 따라서, 예시된 치환기 이외에 다른 치환기가 결합된 화합물에 대해서도 동일한 메카니즘으로 반응이 진행될 것임을 당업자라면 누구나 알 수 있을 것이다.
In the meantime, although the exemplary synthesis example of the present invention represented by the general formula (1) has been described above, all of them are based on Suzuki cross-coupling reaction, Miyaura boration reaction and Buchwald- Hartwig cross coupling reaction. (Substituents such as Ar 1 , Ar 2 , and R 1 to R 12 ) as defined in the above-described formula ( 1 ) are not bonded to each other. For example, the step of producing S-2-1 in Scheme 7 and the step of producing S-3-1 in Scheme 8 are based on the Suzuki cross-coupilng reaction, and the step C-1 in Scheme 2, the step C-2 in Scheme 3 , The step of producing C3 in Scheme 4, the step of producing C4 in Scheme 5, the step of producing S-1-2 in Scheme 6, the step of producing S-2-3 in Scheme 7, the step of producing S-3-3 in Scheme 8, S-4-3 production step in Scheme 10 and S-5-2 production step in Scheme 10 are all based on the Buchwald-Hartwig cross coupling reaction, and the step S 1 in the reaction formula 6, the step S 2 in the reaction formula 7, S 3 production step in Scheme 9, S 4 production step in Scheme 9, and S 5 production step in Scheme 10 are all based on the Miyaura boration reaction. Therefore, it will be understood by those skilled in the art that the reaction will proceed by the same mechanism for other substituent-bonded compounds other than the exemplified substituents.
유기전기소자의 제조평가Evaluation of manufacturing of organic electric device
먼저, 유기 기판에 형성된 ITO층(양극) 상에 2-TNATA를 진공증착하여 60nm 두께로 정공주입층을 형성한 후, 정공주입층 위에 본 발명에 따른 화합물을 20nm 두께로 진공증착하여 정공수송층을 형성하였다. 다음으로, 정공수송층 위에 발광층 호스트 물질로 CBP[4,4'-N,N'-dicarbazole-biphenyl]를, 도판트 물질로 Ir(ppy)3 [tris(2-phenylpyridine)-iridium] 을 9:1의 중량비로 30nm 두께로 도핑하여 발광층을 증착하였다. 이어서 홀 저지층으로 (1,1’-비스페닐)-4-올레이토)비스(2-메틸-8-퀴놀린올레이토)알루미늄(이하 BAlq로 약기함)을 10 nm 두께로 진공증착하고, 전자수송층으로 트리스(8-퀴놀리놀)알루미늄(이하 Alq3로 약칭함)을 40 nm 두께로 성막한 후, 전자주입층으로 할로젠화 알칼리 금속인 LiF를 0.2 nm 두께로 증착하고, 이어서 Al을 150 nm의 두께로 증착하여 Al을 음극으로 사용하여 유기전계 발광소자를 제작하였다.
First, 2-TNATA was vacuum-deposited on the ITO layer (anode) formed on the organic substrate to form a hole injection layer with a thickness of 60 nm. Then, the compound according to the present invention was vacuum-deposited to a thickness of 20 nm on the hole injection layer to form a hole transport layer . Next, CBP [4,4'-N, N'-dicarbazole-biphenyl] was used as a light emitting layer host material and Ir (ppy) 3 [tris (2-phenylpyridine) 1 to a thickness of 30 nm to deposit a light emitting layer. Subsequently, aluminum (1,1'-biphenyl) -4-oleato) bis (2-methyl-8-quinolinolato) aluminum (hereinafter abbreviated as BAlq) was vacuum deposited as a hole blocking layer to a thickness of 10 nm, (8-quinolinol) aluminum (hereinafter abbreviated as Alq 3 ) was deposited to a thickness of 40 nm as a transport layer, LiF as an alkali metal metal to be an electron injecting layer was deposited to a thickness of 0.2 nm, 150 nm thick, and Al was used as a cathode to fabricate an organic electroluminescent device.
[비교예 1][Comparative Example 1]
정공수송층 형성시 본 발명의 화합물 대신 하기 비교 화합물 1을 이용한 것을 제외하고는, 실시예 8과 동일하게 유기전계발광소자를 제작하였다.An organic electroluminescent device was prepared in the same manner as in Example 8, except that the following Comparative Compound 1 was used instead of the compound of the present invention in forming the hole transport layer.
[비교예 2][Comparative Example 2]
정공수송층 형성시 본 발명의 화합물 대신 하기 비교 화합물 2를 이용한 것을 제외하고는, 실시예 8과 동일하게 유기전계발광소자를 제작하였다.An organic electroluminescent device was prepared in the same manner as in Example 8, except that the following Comparative Compound 2 was used instead of the compound of the present invention in forming the hole transport layer.
[비교예 3][Comparative Example 3]
정공수송층 형성시 본 발명의 화합물 대신 하기 비교 화합물 3을 이용한 것을 제외하고는, 실시예 8과 동일하게 유기전계발광소자를 제작하였다.An organic electroluminescent device was fabricated in the same manner as in Example 8, except that the following Comparative Compound 3 was used instead of the compound of the present invention in forming the hole transport layer.
상기와 같이 제조된 본 발명의 실시예 8 및 비교예1, 비교예 2, 비교예 3의 유기전기발광소자에 순바이어스 직류전압을 가하여 포토리서치(photoresearch)사의 PR-650으로 전기발광(EL) 특성을 측정하였으며, 그 측정 결과 300cd/m2 기준 휘도에서 맥사이언스사에서 제조된 수명 측정 장비를 통해 T90 수명을 측정하였다. 본 발명의 실시예 8과 비교예 1, 비교예 2 , 비교예 3의 화합물에 따라 제조된 유기전계발광소자의 구동전압, 전류밀도, 휘도, 발광효율 및 수명을 측정한 결과는 하기 표4와 같았다.Electrically-electroluminescent (EL) EL devices were fabricated by photolithography PR-650 by applying a forward bias DC voltage to the organic electroluminescent devices of Example 8 and Comparative Example 1, Comparative Example 2 and Comparative Example 3, The T90 lifetime was measured by a lifetime measuring device manufactured by Mac Science Inc. at a luminance of 300 cd / m 2. The results of measuring the driving voltage, current density, luminance, luminescence efficiency and lifetime of the organic electroluminescent device manufactured according to the compound of Example 8, Comparative Example 1, Comparative Example 2 and Comparative Example 3 are shown in Table 4 It was the same.
상기 표 4의 결과로부터 비교예 1, 비교예 2 및 비교예 3에 의해 제작된 유기전기소자보다 본 발명의 화합물을 정공수송층으로 사용한 본 발명의 실시예 8에 따라 제작된 유기전기소자의 구동전압이 낮고, 발광효율 및 수명 등이 현저히 개선됨을 확인할 수 있다.
From the results of Table 4, the driving voltage of the organic electroluminescent device fabricated according to Example 8 of the present invention using the compound of the present invention as a hole transporting layer, compared with the organic electroluminescent devices manufactured by Comparative Examples 1, 2, And the luminous efficiency and the life span are remarkably improved.
먼저, 유리 기판에 형성된 ITO층(양극) 상에 구리프탈로사이아닌(이하 CuPc로 약기함)을 진공증착하여 40 nm 두께의 정공주입층을 형성한 후, 정공주입층 위에 본 발명의 화합물 3-27을 20 nm 두께로 진공증착하여 정공수송층을 형성하였다. 다음으로, 정공수송층 위에 본 발명의 화합물을 20 nm의 두께로 진공증착하여 발광 보조층을 형성하였다. 이후, 발광보조층 상부에 인광 호스트 재료로서 CBP[4,4'-N,N'-dicarbazole-biphenyl]를, 인광 도펀트 재료로 트리스(2-페닐피리딘)이리듐(이하 Ir(ppy)3로 약기함)을 95:5의 중량비로 30nm 두께로 도핑하여 발광층을 증착하였다. 상기 발광층 상부에 홀 저지층으로 (1,1’-비스페닐)-4-올레이토)비스(2-메틸-8-퀴놀린올레이토)알루미늄(이하 BAlq로 약기함)을 10 nm 두께로 진공증착하고, 전자수송층으로 트리스(8-퀴놀리놀)알루미늄(이하 Alq3로 약칭함)을 40 nm 두께로 성막한 후, 전자주입층으로 할로젠화 알칼리 금속인 LiF를 0.2 nm 두께로 증착하고, 이어서 Al을 150 nm의 두께로 증착하여 Al을 음극으로 사용함으로써 유기전계 발광소자를 제조하였다. 이때, 정공수송층 재료로 본 발명의 화합물 3-27을 사용한 이유는, 상기 표 4에서 알 수 있는 것과 같이 화합물 3-27을 적용한 유기전기소자의 구동전압이 낮고, 발광효율이 높으면서 수명도 높기 때문이다.
First, copper phthalocyanine (hereinafter abbreviated as CuPc) was vacuum deposited on an ITO layer (anode) formed on a glass substrate to form a hole injection layer having a thickness of 40 nm. Then, the compound 3 -27 was vacuum deposited to a thickness of 20 nm to form a hole transport layer. Next, the compound of the present invention was vacuum-deposited on the hole transporting layer to a thickness of 20 nm to form a light emitting auxiliary layer. Then, about the CBP [4,4'-N, N'- dicarbazole-biphenyl] as the phosphorescent host material to the light-emitting auxiliary top layer, a phosphorescent dopant material to the tris (2-phenylpyridine) iridium (hereinafter referred to as Ir (ppy) 3 ) Was doped to a thickness of 30 nm at a weight ratio of 95: 5 to deposit a light emitting layer. (1, 1'-biphenyl) -4-oleato) bis (2-methyl-8-quinolinolato) aluminum (hereinafter abbreviated as BAlq) as a hole blocking layer was vacuum deposited (8-quinolinol) aluminum (hereinafter abbreviated as Alq 3 ) was formed to a thickness of 40 nm as an electron transporting layer, LiF, which is an alkali metal metal to be an electron injecting layer, was deposited to a thickness of 0.2 nm, Subsequently, Al was deposited to a thickness of 150 nm, and Al was used as a cathode to produce an organic electroluminescent device. The reason for using the compound 3-27 of the present invention as the hole transport layer material is that the driving voltage of the organic electronic device to which the compound 3-27 is applied is low and the lifetime is high while the light emitting efficiency is high to be.
[비교예 4][Comparative Example 4]
상기 실시예 9와 동일하게 유기전계발광소자를 제작하되 발광보조층은 생략되었다. 즉, 발광보조층이 형성되지 않은 점을 제외하고는 실시예 9와 동일한 방법으로 유기전계발광소자를 제작하였다.
An organic electroluminescent device was fabricated in the same manner as in Example 9 except that the light emitting auxiliary layer was omitted. That is, an organic electroluminescent device was fabricated in the same manner as in Example 9, except that no light-emission-assisting layer was formed.
[비교예 5][Comparative Example 5]
상기 실시예 9와 동일하게 유기전계발광소자를 제작하되, 본 발명의 화합물 대신 비교 화합물 3을 이용하여 발광보조층을 형성하였다.
An organic electroluminescent device was fabricated in the same manner as in Example 9, except that the compound of the present invention was used instead of the compound of the present invention to form a light-emitting auxiliary layer.
상기와 같이 제조된 본 발명의 실시예 9, 비교예 4 및 비교예 5의 유기전기발광소자들에 순바이어스 직류전압을 가하여 포토리서치(photoresearch)사의 PR-650으로 전기발광(EL) 특성을 측정하였으며, 그 측정 결과 300cd/m2 기준 휘도에서 맥사이언스사에서 제조된 수명 측정 장비를 통해 T95 수명을 측정하였다. 본 발명의 실시예 9, 비교예 4 및 비교예 5에 따라 제조된 유기전계발광소자의 구동전압, 전류밀도, 휘도,발광효율 및 수명을 측정한 결과는 하기 표 5와 같았다. A forward bias DC voltage was applied to the organic electroluminescent devices of Example 9, Comparative Example 4 and Comparative Example 5 of the present invention, and electroluminescence (EL) characteristics were measured with photoresearch PR-650 And the T95 lifetime was measured by a lifetime measuring device manufactured by Mac Science Inc. at a luminance of 300 cd / m 2. The results of measurement of the driving voltage, current density, luminance, luminescence efficiency and lifetime of the organic electroluminescent device manufactured according to Example 9, Comparative Example 4 and Comparative Example 5 were as shown in Table 5 below.
(mA/cm2)electric current
(mA / cm 2)
(cd/m2)Luminance
(cd / m < 2 &
(cd/A)efficiency
(cd / A)
상기 표 5의 결과로부터 알 수 있듯이, 본 발명의 따른 화합물을 발광보조층으로 사용시, 발광보조층을 전혀 사용하지 않은 비교예 4 및 비교 화합물 3을 적용하여 발광보조층을 형성한 비교예 5에 비하여 유기전기소자의 구동전압을 낮출 수 있을 뿐만 아니라, 효율 및 수명 등을 현저히 개선시킬 수 있다.As can be seen from the results of Table 5, when the compound according to the present invention was used as the luminescent auxiliary layer, Comparative Example 4 and Comparative Compound 3 in which the luminescent auxiliary layer was not used at all, The driving voltage of the organic electroluminescent device can be lowered and the efficiency and lifetime can be remarkably improved.
상기와 같은 우수한 특성을 보이기 때문에 본 발명에 따른 화합물은 유기전기발광소자(OLED)뿐만 아니라, 디스플레이장치, 유기태양전지, 유기감광체(OPC), 유기트랜지스터(유기 TFT), 단색 또는 백색 조명용 소자 등에도 사용될 수 있다.The compound according to the present invention can be applied not only to organic electroluminescent devices (OLEDs) but also to display devices, organic solar cells, organic photoconductors (OPC), organic transistors (organic TFT), monochromatic or white illumination devices Can also be used.
한편, 본 발명의 화합물들을 유기전계발광소자의 다른 유기물층들, 예를 들어 정공주입층, 발광층, 전자주입층, 전자수송층 등에 사용되더라도 동일한 효과를 얻을 수 있을 것이다.Meanwhile, the same effects can be obtained even when the compounds of the present invention are used in other organic layers of an organic electroluminescent device, for example, a hole injecting layer, a light emitting layer, an electron injecting layer and an electron transporting layer.
이상, 본 발명을 예시적으로 설명하였으나, 본 발명이 속하는 기술분야에서 통상의 지식을 가지는 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위에서 다양한 변형이 가능할 것이다. 따라서, 본 명세서에 개시된 실시예들은 본 발명을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시예에 의하여 본 발명의 사상과 범위가 한정되는 것은 아니다. 본 발명의 보호범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술은 본 발명의 권리범위에 포함하는 것으로 해석되어야 할 것이다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, many variations and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the embodiments disclosed herein are intended to be illustrative rather than limiting, and the spirit and scope of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all the techniques within the scope of the same should be construed as being included in the scope of the present invention.
Claims (8)
<화학식 1>
상기 화학식 1 에서,
(1) Ar1 및 Ar2는 각각 서로 독립적으로, 수소, 중수소, 삼중수소, 할로겐, C1~C20의 알킬기, C1~C20의 알콕시기, C6~C60의 아릴아민기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C6~C60의 아릴기; 수소, 중수소, 삼중수소, C1~C20의 알킬기, C6~C60의 아릴아민기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환되고 O, N ,S ,P 및 Si 중 적어도 하나의 헤테로원자를 포함하는 치환 또는 비치환된 C2~C60의 헤테로고리기; 수소, 중수소, 삼중수소, C1~C20의 알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C6~C30의 아릴옥시기; C1~C20의 알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C1~C50의 알킬기; 및 수소, 중수소, 삼중수소, C1~C20의 알킬기, C6~C60의 아릴기 및 중수소로 치환된 C6~C60의 아릴기로 이루어진 군에서 선택된 치환기로 치환된 실란기;이며,
(2) R1 내지 R12 는 각각 서로 독립적으로 수소; 중수소; 삼중수소; 수소, 중수소, 삼중수소, 할로겐기, C1~C60의 알킬기, C1~C60의 알콕시기, C5~C60의 아릴아민기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 치환 또는 비치환된 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C6~C60의 아릴기; C1~C20의 알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C1~C50의 알킬기; 수소, 중수소, 삼중수소, C1~C20의 알킬기, C6~C20의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C2~C40의 알케닐기; 수소, 중수소, 삼중수소, C1~C20 의 알킬기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 C1~C30의 알콕시기; 수소, 중수소, 삼중수소, C1~C60의 알킬기, C6~C60의 아릴아민기, C6~C60의 아릴기, 중수소로 치환된 C6~C60의 아릴기 및 치환 또는 비치환된 C2~C60의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환되고 O, N ,S ,P 및 Si 중 적어도 하나의 헤테로원자를 포함하는 C2~C60의 헤테로고리기; C6~C60의 방향족고리와 C3~C60의 지방족고리의 축합 고리기; C1~C60의 알킬기, C6~C60의 아릴기 및 C2~C60 의 헤테로고리기로 이루어진 군에서 선택된 치환기로 치환 또는 비치환된 아민기; 니트로기; 니트릴기; 아미드기; 및 실란기; 로 이루어진 군에서 선택되며,
(3) R4와 R5, R6과 R7, R9와 R10, R10과 R11, R11과 R12 각각은 이웃한 기와 서로 결합하여 포화 또는 불포화 고리를 형성할 수 있고, R4와 R5, R6과 R7, R9와 R10, R10과 R11, R11과 R12의 5개의 군 중 적어도 하나의 군은 반드시 상기 고리를 형성한다. A compound represented by the following formula (1).
≪ Formula 1 >
In Formula 1,
(1) Ar 1 and Ar 2 each independently represent hydrogen, deuterium, tritium, halogen, a C 1 to C 20 alkyl group, a C 1 to C 20 alkoxy group, a C 6 to C 60 arylamine group, C 6 ~ C 60 aryl group, of a C 6 ~ C 60 aryl group and C 2 ~ C with a substituent selected from the 60 group consisting of a heterocyclic group of the substituted or unsubstituted C 6 ~ C 60 substituted by deuterium aryl group ; Hydrogen, deuterium, tritium, C 1 ~ C 20 alkyl group, C 6 ~ C 60 aryl amine group, a C 6 ~ C 60 aryl group, of a C 6 ~ C 60 substituted by deuterium aryl group and C 2 ~ of A substituted or unsubstituted C 2 to C 60 heterocyclic group which is substituted or unsubstituted with a substituent selected from the group consisting of C 60 heterocyclic groups and contains at least one hetero atom selected from the group consisting of O, N, S, P and Si; Hydrogen, deuterium, tritium, C 1 ~ C 20 alkyl group, C 6 ~ C 60 aryl group, of a C 6 ~ C 60 substituted by deuterium aryl group and C 2 ~ C 60 heterocyclic group selected from the group consisting of A C 6 ~ C 30 aryloxy group substituted or unsubstituted with a substituent group; C 1 ~ C 20 alkyl group, C 6 ~ C 60 aryl group, of a C 6 ~ C 60 substituted by deuterium aryl group, and a hetero group, ring C 2 ~ C 60 of a substituent is substituted or unsubstituted in A C 1 to C 50 alkyl group; And a silane group substituted with a substituent selected from the group consisting of hydrogen, deuterium, tritium, a C 1 to C 20 alkyl group, a C 6 to C 60 aryl group and a C 6 to C 60 aryl group substituted with deuterium,
(2) R 1 to R 12 are each independently of the other hydrogen; heavy hydrogen; Tritium; Substituted with hydrogen, deuterium, tritium, a halogen group, C 1 ~ C 60 alkyl group, C 1 ~ C 60 alkoxy group, C 5 ~ C 60 aryl amine group, a C 6 ~ C 60 aryl group, a heavy hydrogen of the an aryl group of C 6 ~ C 60 aryl group and a substituted or non-substituted substituted or unsubstituted with substituents selected from the group consisting of a heterocycle of the C 2 ~ C 60 unsubstituted C 6 ~ C 60; C 1 ~ C 20 alkyl group, C 6 ~ C 60 aryl group, of a C 6 ~ C 60 substituted by deuterium aryl group, and a hetero group, ring C 2 ~ C 60 of a substituent is substituted or unsubstituted in A C 1 to C 50 alkyl group; Wherein R is selected from the group consisting of hydrogen, deuterium, tritium, a C 1 to C 20 alkyl group, a C 6 to C 20 aryl group, a C 6 to C 60 aryl group substituted with deuterium, and a C 2 to C 60 heterocyclic group A C 2 to C 40 alkenyl group substituted or unsubstituted with a substituent group; Hydrogen, deuterium, tritium, C 1 ~ C 20 alkyl group, C 6 ~ C 60 aryl group, of a C 6 ~ C 60 substituted by deuterium aryl group and C 2 ~ C 60 heterocyclic group selected from the group consisting of A substituted or unsubstituted C 1 to C 30 alkoxy group; Hydrogen, deuterium, tritium, C 1 ~ C 60 alkyl group, C 6 ~ C 60 aryl amine group, a C 6 ~ C 60 aryl group, a C 6 ~ C 60 substituted with a heavy hydrogen of the aryl group and a substituted or unsubstituted a heterocyclic group of C 2 ~ C hwandoen with a substituent selected from the 60 group consisting of heterocyclic ring being unsubstituted or substituted with O, N, S, P, and C 2 ~ containing at least one hetero atom of the Si C 60; A condensed ring group of an aromatic ring of C 6 to C 60 and an aliphatic ring of C 3 to C 60 ; An amine group substituted or unsubstituted with a substituent selected from the group consisting of a C 1 to C 60 alkyl group, a C 6 to C 60 aryl group, and a C 2 to C 60 heterocyclic group; A nitro group; A nitrile group; Amide group; And a silane group; , ≪ / RTI >
(3) R 4 and R 5 , R 6 and R 7 , R 9 and R 10 , R 10 and R 11 , and R 11 and R 12 each may be bonded to adjacent groups to form a saturated or unsaturated ring, At least one group of R 4 and R 5 , R 6 and R 7 , R 9 and R 10 , R 10 and R 11 , and at least one of R 11 and R 12 necessarily forms the ring.
하기 화학식 2 내지 화학식 6 중 하나인 것을 특징으로 하는 화합물.
The method according to claim 1,
Is a compound represented by any one of the following formulas (2) to (6).
Lt; RTI ID = 0.0 > 1, < / RTI >
상기 화합물을 용액공정에 의해 상기 유기물층으로 형성하는 것을 특징으로 하는 유기전기소자.5. The method of claim 4,
Wherein said compound is formed into said organic material layer by a solution process.
상기 유기물층은 정공 수송층, 발광보조층, 발광층, 정공 주입층, 전자 주입층 및 전자 수송층 중 적어도 일층을 포함하는 것을 특징으로 하는 유기전기소자.5. The method of claim 4,
Wherein the organic material layer includes at least one of a hole transporting layer, a light emitting auxiliary layer, a light emitting layer, a hole injecting layer, an electron injecting layer, and an electron transporting layer.
상기 디스플레이장치를 구동하는 제어부; 를 포함하는 전자장치.A display device including the organic electroluminescent device of claim 4; And
A controller for driving the display device; ≪ / RTI >
상기 유기전기소자는 유기전기발광소자(OLED ), 유기태양전지, 유기감광체(OPC), 유기트랜지스터(유기 TFT), 및 단색 또는 백색 조명용 소자 중 적어도 하나인 것을 특징으로 하는 전자장치.8. The method of claim 7,
Wherein the organic electronic device is at least one of an organic electroluminescent device (OLED), an organic solar cell, an organic photoconductor (OPC), an organic transistor (organic TFT), and a monochromatic or white illumination device.
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