KR101272013B1 - Electrostatic chuck and wafer processing apparatus having the electrostatic chuck - Google Patents

Abstract

The electrostatic chuck of the present invention has a ceramic plate having a circular shape in a planar shape and a substrate placed on an upper surface thereof and having a cooling gas circulation line for circulating cooling gas, and a ceramic plate having a shape corresponding to that of the ceramic plate in plan view. And a body having a coolant circulation line for circulating the coolant. The body and the ceramic plate are formed with a cooling gas supply hole connected with a cooling gas circulation line and providing a cooling gas, and a cooling water supply hole providing a cooling water with a cooling water circulation line. As such, the cooling gas and the cooling water may be circulated through the cooling gas circulation line of the ceramic plate and the cooling water circulation line of the body to further reduce the temperature of the substrate.

Description

ELECTROSTATIC CHUCK AND WAFER PROCESSING APPARATUS HAVING THE ELECTROSTATIC CHUCK}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck and a substrate processing apparatus having the same, and more particularly, to an electrostatic chuck and a substrate processing having the same, which are located inside a processing chamber for processing a semiconductor substrate such as a silicon wafer. Relates to a device.

In general, a semiconductor device includes a Fab process for forming an electrical circuit on a silicon wafer used as a semiconductor substrate, an electrical die sorting (EDS) process for inspecting electrical characteristics of semiconductor devices formed in the fab process; Each of the semiconductor devices is manufactured through a package assembly process for encapsulating and individualizing the epoxy resins.

The fab process includes a deposition process for forming a film on a wafer, a chemical mechanical polishing process for planarizing the film, a photolithography process for forming a photoresist pattern on the film, and the photoresist pattern using the photoresist pattern. An etching process for forming the film into a pattern having electrical characteristics, an ion implantation process for implanting specific ions into a predetermined region of the wafer, a cleaning process for removing impurities on the wafer, and a process for drying the cleaned wafer And a drying step and an inspection step for inspecting the defect of the film or pattern.

Recently, a plasma processing apparatus for forming a film or etching a film using plasma gas is mainly used in the fab process. The plasma processing apparatus includes a processing chamber having a space for processing a semiconductor substrate, an electrostatic chuck for supporting the semiconductor substrate and disposed in the processing chamber, and an upper portion for forming a reaction gas supplied to the processing chamber with plasma gas. An electrode.

The electrostatic chuck adsorbs the semiconductor substrate using electrostatic force, and the semiconductor substrate is processed by the plasma gas. The plasma gas is formed by RF power applied to the upper electrode, and a bias power for adjusting the behavior of the plasma gas is applied to the electrostatic chuck. Alternatively, RF power for plasma generation may be applied to the electrostatic chuck.

On the other hand, when an etching process or the like is formed through the plasma processing apparatus, the temperature of the semiconductor substrate disposed on the electrostatic chuck is rapidly increased by several hundred degrees, and as a result, the lithography surface completed in all semiconductor processes is obtained. In order to protect the surface, there is a problem that the property of the adhesive resin of the lamination tape attached is changed so that all the process surfaces cannot be used.

Therefore, the present invention is to solve this problem, the problem to be solved of the present invention is to provide an electrostatic chuck that can reduce the temperature of the substrate.

In addition, another object of the present invention is to provide a substrate processing apparatus having the electrostatic chuck.

The electrostatic chuck according to an embodiment of the present invention has a planar circular shape, a ceramic plate having a cooling gas circulation line for circulating cooling gas, and a substrate disposed on an upper surface thereof, and a shape corresponding to the ceramic plate in plan view. And a body supporting the ceramic plate and having a coolant circulation line for circulating the coolant. The body and the ceramic plate are provided with a cooling gas supply hole connected with the cooling gas circulation line to provide the cooling gas and a cooling water supply hole connected with the cooling water circulation line to provide the cooling water.

The cooling gas circulation line includes a plurality of cooling gas lines spaced apart from each other on an upper surface of the ceramic plate, and the cooling gas supply holes are connected to each of the cooling gas lines to supply a plurality of gas to supply the cooling gas. It may include holes.

Each of the cooling gas lines is connected to any one of the gas distribution grooves and the gas supply holes formed concentrically with respect to the center of the ceramic plate, and receives the cooling gas and receives the one of the gas supply holes and the It may include a gas connecting groove for connecting between the gas distribution groove to provide the cooling gas to the gas distribution groove. At this time, any one of the gas connection grooves of the cooling gas lines may divide at least one other gas distribution groove disposed inside the one gas distribution groove into two parts.

The coolant circulation line includes a plurality of coolant lines formed to be spaced apart from each other in a concentric manner with respect to the center of the body in the interior of the body, a portion of the coolant line is formed in an open shape, the coolant line adjacent to each other They can be connected to each other via the opened portion. In this case, the coolant lines adjacent to each other may be connected to be rounded through the opened portion.

Meanwhile, the body may be made of metal, and an electrode may be formed inside the ceramic plate to be connected to an external DC power source to receive a bias voltage.

Substrate processing apparatus according to an embodiment of the present invention includes a process chamber, an electrostatic chuck and a gas supply. The process chamber provides space for processing a substrate. The electrostatic chuck has a planar circular shape, a ceramic plate having a cooling gas circulation line for circulating a cooling gas, and a substrate disposed on an upper surface thereof, and having a shape corresponding to the ceramic plate in a planar manner, supporting the ceramic plate. And a body having a coolant circulation line for circulating the coolant. In this case, the body and the ceramic plate are formed with a cooling gas supply hole connected with the cooling gas circulation line to provide the cooling gas and a cooling water supply hole connecting with the cooling water circulation line to provide the cooling water. The gas supply unit is disposed in the process chamber to provide a process gas for processing the substrate into the process chamber.

The cooling gas circulation line includes a plurality of cooling gas lines spaced apart from each other on an upper surface of the ceramic plate, and the cooling gas supply holes are connected to each of the cooling gas lines to supply a plurality of gas to supply the cooling gas. And a plurality of coolant lines formed in the body, the coolant circulation lines being spaced apart from each other, wherein a portion of the coolant lines are formed in an open shape, and the coolant lines adjacent to each other are formed in the opened portion. Can be connected to each other through.

Thus, according to the electrostatic chuck and the substrate processing apparatus having the same, the substrate disposed on the ceramic plate through the cooling gas circulation line for circulating the cooling gas in the ceramic plate and the cooling water circulation line for circulating the coolant in the body supporting the ceramic plate. It can further reduce the temperature of.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a plan view illustrating a ceramic plate of the electrostatic chuck of FIG. 1.
3 is a cross-sectional view taken along line II ′ of FIG. 2.
4 is a plan view illustrating a body of the electrostatic chuck of FIG. 1.
FIG. 5 is a cross-sectional view taken along the line II-II 'of FIG. 4.

Hereinafter, an electrostatic chuck and a substrate processing apparatus having the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged to illustrate the present invention in order to clarify the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 200 may be used to process a semiconductor substrate W such as a silicon wafer using a process gas. Examples of the processing include deposition, etching, ashing, and the like. In detail, the substrate processing apparatus 200 may include a process chamber 202, an electrostatic chuck 100, a cooling supply unit 206, a gas supply unit 210, and a vacuum providing unit 240. In this case, the cooling supply unit 206 may include a cooling gas supply unit supplying the cooling gas and a cooling water supply unit supplying the cooling water.

The semiconductor substrate W may be disposed on the electrostatic chuck 100 provided in the process chamber 202, and may be disposed on the substrate W by reaction of the process gas provided from the gas supply unit 210. Machining can be done.

The electrostatic chuck 100 supports the semiconductor substrate W. The electrostatic chuck 100 includes a ceramic plate, a body, an electrode, and a direct current power source. Detailed description of the electrostatic chuck 100 will be described later using a separate drawing. On the other hand, the electrostatic chuck 100 is connected to the cooling supply unit 206 for providing a cooling gas for reducing the temperature of the substrate (W).

Although not shown in detail, it may be arranged to be movable in the vertical direction for performing the processing process of the substrate (W). That is, it may be connected to a vertical driver (not shown) to move up and down between a position for loading and unloading the semiconductor substrate W and a position for processing the substrate W. FIG. In addition, a plurality of lift pins (not shown) for loading and unloading the semiconductor substrate W may be disposed to be moved up and down through the electrostatic chuck 100.

A gate door 230 for entering and exiting the semiconductor substrate W is disposed at one side of the process chamber 202, and at the other side of the process chamber 202, a process pressure is applied to the inside of the process chamber 202. For example, the vacuum providing unit 240 for forming a vacuum may be connected to the process chamber 202 through a vacuum valve 242.

The vacuum providing unit 240 may include a vacuum pump for providing a vacuum in the process chamber 202 during the processing of the substrate (W). As the vacuum pump, a low vacuum pump or a medium vacuum pump may be used according to the process pressure, and in some cases, a low vacuum pump and a high vacuum pump may be used together.

The process chamber 202 may have an open upper portion, and the gas supply unit 210 may be disposed at the open upper portion to supply a process gas for processing the substrate (W). In addition, a dome 250 may be disposed on the gas supply part 210 to cover the open upper portion, and the coil electrode 260 may be disposed to be adjacent to the dome 250. The coil electrode 260 may be connected to a high frequency power source 262, for example, a radio frequency (RF) power source, to form a process gas supplied into the process chamber 202 in a plasma state. 260 may be made of a material capable of transmitting the RF energy, for example, quartz.

As shown, the dome 250 does not have a perfect hemispherical shape, but the shape of the dome 250 does not limit the scope of the present invention, and also, the process chamber 202 and the electrostatic chuck 100. The scope of the present invention is not limited by such shapes.

In addition, a bias power source for controlling the behavior of the process gas formed in the plasma state may be connected to the electrostatic chuck 100.

Although not shown in detail, the gas supply unit 210 may be connected to a gas source (not shown) that provides process gas (es) through an outer wall of the process chamber 202. The gas supply unit 210 may include a gas ring 212 and a plurality of gas nozzles 214.

The gas ring 212 is connected to a gas line 212a having a ring shape and providing gas therein. The gas line 212a extends in the form of a line along the gas ring 212 and thus has a ring shape. The quantity of the gas line 212a may vary according to the type of gas to be injected. A plurality of branch lines 212b branched from the gas line 212a and extending toward the inner side surface are formed in the gas ring 212.

The gas nozzles 214 are arranged on the inner side of the gas ring 212 to face the center of the gas ring 212. The gas nozzles 214 are spaced apart from each other by a predetermined interval. For example, the gas nozzles 214 may be screwed directly with the gas ring 212. As another example, the gas nozzles 214 and the gas ring 212 may be coupled using an adapter.

The gas nozzles 214 have gas injection holes 214a therein, respectively. The gas injection hole 214a is connected to the branch line 212b of the gas line 212a and injects the gas toward the center of the gas ring 212.

FIG. 2 is a plan view illustrating a ceramic plate of the electrostatic chuck of FIG. 1, FIG. 3 is a cross-sectional view taken along line II ′ of FIG. 2, and FIG. 4 is a diagram illustrating a body of the electrostatic chuck of FIG. 1. 5 is a cross-sectional view taken along the line II-II 'of FIG. 4.

2 to 5, the electrostatic chuck 100 includes a ceramic plate 110, a body 120, an electrode 130, and a direct current power source 140.

The ceramic plate 110 supports the substrate W, and the body 120 is disposed under the ceramic plate 110 to support the ceramic plate 110. The body 120 may be made of metal, for example, aluminum. The electrode 130 is provided inside the ceramic plate 110 and generates an electrostatic force for adsorbing and fixing the substrate (W). The DC power supply 140 is connected to the electrode 130, and applies a bias power for generating the electrostatic force to the electrode 130. In this case, an upper portion of the ceramic plate 110 between the electrode 130 and the substrate W serves as a dielectric.

On the other hand, when the substrate (W) is a silicon wafer generally has a circular shape, the body 120 and the ceramic plate 110 may also be formed in a circular shape when viewed in plan view.

2 and 3 again, a cooling gas circulation line 112 for circulating a cooling gas is formed in the ceramic plate 110, and the cooling is performed on the body 120 and the ceramic plate 110. The cooling gas supply hole 114 is connected to the gas circulation line 112 to provide the cooling gas. In this case, the cooling gas supply hole 114 is connected to the cooling gas supply part and receives the cooling gas and provides the cooling gas to the cooling gas circulation line 112.

In the present embodiment, the cooling gas circulation line 112 includes a plurality of cooling gas lines spaced apart from each other on the upper surface of the ceramic plate 110, the cooling gas supply hole 114 is the cooling gas lines It may include a plurality of gas supply holes connected to each to supply the cooling gas.

In addition, each of the cooling gas lines may be connected to any one of the gas distribution grooves and the gas supply holes formed in a concentric circle with respect to the center of the ceramic plate 110 to receive the cooling gas. A gas connection groove may be connected between a gas supply hole and the gas distribution groove to provide the cooling gas to the gas distribution groove. At this time, any one of the gas connection grooves of the cooling gas lines may divide at least one other gas distribution groove disposed inside the one gas distribution groove into two parts.

Specifically, for example, the cooling gas circulation line 112 may include first and second cooling gas lines 112a and 112b spaced apart from each other on the upper surface of the ceramic plate 110, and the cooling The gas supply hole 114 may include first and second gas supply holes 114a and 114b connected to each of the first and second cooling gas lines 112a and 112b to supply the cooling gas. have. In addition, the first cooling gas line 112a may include a first gas distribution groove GH1 and a first gas connection groove CH1, and the second cooling gas line 112b may include a second gas distribution groove. And a first gas connection groove CH2.

The first gas supply hole 114a vertically penetrates the body 120 and the ceramic plate 110 and is connected to the cooling gas supply part to apply cooling gas, for example, helium gas, from the cooling gas supply part. Receive. In this case, the first gas supply hole 114a may be located at the center of the ceramic plate 110.

The first gas distribution groove GH1 is formed along an edge of the upper surface of the ceramic plate 110. For example, the first gas distribution groove GH1 may be formed in a circular shape in a plane. Alternatively, the first gas distribution groove GH1 may be formed along the edge of the upper surface of the ceramic plate 110, and may be formed in a zigzag manner.

The first gas connection groove CH1 is formed on an upper surface of the ceramic plate 110 to connect between the first gas supply hole 114a and the first gas distribution groove GH1. As a result, the cooling gas emitted from the first gas supply hole 114a is provided to and distributed to the first gas distribution groove GH1 through the first gas connection groove CH1, and then again the first gas. It may be provided to the first gas supply hole 114a through a connection groove CH1 to be provided to the outside or to the cooling gas supply unit. In this case, the first gas connecting groove CH1 may be formed in a straight line toward the outside from the center of the ceramic plate 110.

The second gas supply hole 114b vertically penetrates the body 120 and the ceramic plate 110 and is connected to the cooling gas supply part to receive a cooling gas from the cooling gas supply part. In this case, the second gas supply hole 114b may be located at the center of the ceramic plate 110. For example, the second gas supply hole 114b is located at the center of the ceramic plate 110, and the first gas supply hole 114a is a predetermined distance from the center of the ceramic plate 110 to the outside. It may be formed in a spaced position.

The second gas distribution groove GH2 is formed in a planar circular shape on the top surface of the ceramic plate 110 to have a diameter smaller than that of the first gas distribution groove GH1, and the first gas connection groove CH1 is formed. The open part is formed where the first gas connecting groove CH1 is formed to be spaced apart from the first gas connecting groove CH1. That is, the first gas connecting groove CH1 is divided into two parts by the first gas connecting groove CH1. The second gas distribution groove GH2 may be formed in a circular shape, and may be formed in a zigzag form.

The second gas connection groove CH2 is formed on an upper surface of the ceramic plate 110 to connect between the second gas supply hole 114b and the second gas distribution groove GH2. As a result, the cooling gas emitted from the second gas supply hole 114b is provided to and distributed to the second gas distribution groove GH2 through the second gas connection groove CH2, and then again to the second gas. It may be provided to the second gas supply hole 114b through a connection groove CH2 and provided to the outside or the cooling gas supply unit. In this case, the second gas connection grooves CH2 may be formed at both sides such that the pair is straight with respect to the second gas supply hole 114b.

4 and 5 again, a cooling water circulation line 122 is formed on the body 120 to circulate the cooling water, and the cooling water circulation line is formed on the body 120 and the ceramic plate 110. A coolant supply hole 124 is formed to be connected to 122 to provide the coolant.

In this embodiment, the coolant circulation line 122 includes a plurality of coolant lines formed to be spaced apart from each other in concentric circles with respect to the center of the body 120 in the interior of the body 120, A portion is formed in an open shape, and the coolant lines adjacent to each other may be connected to each other through the open portion. In this case, the coolant lines adjacent to each other may be connected to be rounded through the opened portion.

Specifically, for example, the cooling water circulation line 122 has first to fifth cooling water lines formed in the interior of the body 120 and spaced apart from each other with concentric circles with respect to the center of the body 120 ( 122a, 122b, 122c, 122d, 122e). In this case, the first coolant line 122a has a first diameter, the second coolant line 122b has a second diameter smaller than the first diameter, and the third coolant line 122c has the second diameter. The fourth cooling water line 122d has a third diameter smaller than the diameter, and the fourth cooling water line 122d has a fourth diameter smaller than the third diameter, and the fifth cooling water line 122e has a fifth diameter smaller than the fourth diameter. .

Here, the first coolant line 122a and the second coolant line 122b are connected to each other to be rounded through the first opening A1, and the second coolant line 122b and the third coolant line 122c are connected to each other. ) Are connected to each other so as to be rounded through the second opening A2, and the third coolant line 122c and the fourth coolant line 122d are connected to each other so as to be rounded through the third opening A3. The fourth coolant line 122d and the fifth coolant line 122e are connected to each other to be rounded through the fourth opening A4. Meanwhile, the first to fourth openings A1, A2, A3, and A4 are preferably distributed so as not to be disposed on the same diameter line. Meanwhile, the planar pattern of the first to fifth coolant lines 122a, 122b, 122c, 122d, and 122e may be formed as, for example, a shape as illustrated in FIG. 4, but may be formed in another modified shape. have.

The coolant supply hole 124 vertically penetrates the body 120 and the ceramic plate 110 to be connected to any one of the first to fifth coolant lines 122a, 122b, 122c, 122d, and 122e. do. For example, the coolant supply hole 124 may include a first coolant hole 124a connected to the third coolant line 122c and a second coolant hole 124b connected to the second coolant line 122b as shown in FIG. 4. It may include. In this case, the first and second coolant holes 124a and 124b are connected to the coolant supply unit as shown in FIG. 5 to receive the coolant from the coolant supply unit to provide the first to fifth coolant lines 122a and 122b, 122c, 122d, and 122e) to provide circulation, and the circulated cooling water may be discharged to the external or the cooling water supply unit through the first and second cooling water holes 124a and 124b. Meanwhile, the first through fifth coolant lines 122a, 122b, 122c, 122d, and 122e are supplied through one of the first and second coolant holes 124a and 124b, and externally through the other. Can be discharged.

Thus, according to this embodiment, the cooling gas is circulated through the cooling gas circulation line 112 of the ceramic plate 110 to reduce the temperature of the substrate (W), the cooling water circulation line of the body 120 As the coolant is circulated through the 122 to reduce the temperature of the substrate W, the temperature of the substrate W disposed on the ceramic plate 110 may be further reduced.

While the present invention has been described in connection with what is presently considered to be practical and exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100: electrostatic chuck 110: ceramic plate
112: cooling gas circulation line 112a: first cooling gas line
GH1: first gas distribution groove CH1: first gas connection groove
112b: first cooling gas line GH2: second gas distribution groove
CH2: second gas connection groove 114: cooling gas supply hole
120: body 122: cooling water circulation line
122a: first cooling water line 122b: second cooling water line
122c: third cooling water line 122d: fourth cooling water line
122e: fifth cooling water line 124: cooling water supply hole
130 electrode 140 DC power
200: substrate processing apparatus 202: process chamber
206: cooling supply unit 210: gas supply unit

Claims (10)

A ceramic plate having a circular shape in plan view, and having a substrate disposed on an upper surface thereof, the ceramic plate having a cooling gas circulation line formed to be exposed to the upper surface for circulating cooling gas; And
A body having a shape corresponding to the ceramic plate in plan view, supporting the ceramic plate, and having a coolant circulation line for circulating coolant,
A cooling gas supply hole penetrating along the body and the ceramic plate and connected to the cooling gas circulation line and providing the cooling gas,
The cooling water supply hole is connected to the cooling water circulation line in the body to provide the cooling water.
The cooling gas circulation line may include a first cooling gas line formed to cool a first region adjacent to the center of the ceramic plate, and a first cooling gas to cool a second region located outside the first region. A second cooling gas line formed to be spaced apart from the line,
The cooling gas supply hole may be connected to the first cooling gas line to supply a first cooling gas, and may be connected to the second cooling gas line to supply a second cooling gas different from the first cooling gas. And a second gas supply hole for supplying the electrostatic chuck. The method of claim 1, wherein the first cooling gas line
A first gas distribution groove formed in a circle to have a first diameter with respect to the center of the ceramic,
The second cooling gas line
And a second gas distribution groove formed in a circle so as to have a second diameter larger than the first diameter with respect to the center of the ceramic. The method of claim 2, wherein the first cooling gas line
And a first gas connection groove connected between the first gas supply hole and the first gas distribution groove to transfer the first cooling gas.
The second cooling gas line
And a second gas connection groove connecting the second gas supply hole and the second gas distribution groove to transfer the second cooling gas. The gas supply hole of claim 3, wherein the first gas supply hole is formed at the center of the ceramic, and the second gas supply hole is formed to be spaced apart from the first gas supply hole inside the first gas distribution groove.
The first gas connection groove is connected to the first gas distribution groove to cross the first gas supply hole,
And the second gas connection groove is connected to the second gas distribution groove through an open portion of the first gas distribution groove. According to claim 1, wherein the cooling water circulation line
Comprising a plurality of coolant lines formed spaced apart from each other in a concentric circle with respect to the center of the body inside the body,
A portion of the coolant lines is formed in an open shape, and the coolant lines adjacent to each other are connected to each other through the opened portion. The method of claim 5, wherein the coolant lines adjacent to each other
And electrostatic chuck connected roundly through the opened portion. The method of claim 1, wherein the body is
Electrostatic chuck, characterized in that made of metal. The method of claim 1, wherein the inside of the ceramic plate
Electrostatic chuck characterized in that the electrode is connected to the external DC power supply is applied a bias voltage. A process chamber providing space for processing a substrate;
A ceramic plate having a circular shape in planar shape and having a substrate disposed on the upper surface thereof and having a cooling gas circulation line formed to be exposed to the upper surface for circulating cooling gas, and having a shape corresponding to the ceramic plate in plan view. And a body having a coolant circulation line for circulating coolant, the cooling gas supply hole penetrating along the body and the ceramic plate to be connected to the coolant gas circulation line and providing the coolant gas is formed. A cooling water supply hole connected to the cooling water circulation line to provide the cooling water, and the cooling gas circulation line is a first cooling gas line formed to cool a first region adjacent to the center of the ceramic plate, and the The first cooling gas line and the first cooling gas line to cool the second region located outside the first region; And a second cooling gas line spaced apart from each other, wherein the cooling gas supply hole is connected to the first cooling gas line to supply a first cooling gas, and is connected to the second cooling gas line. An electrostatic chuck including a second gas supply hole for supplying a second cooling gas different from the first cooling gas; And
And a gas supply unit disposed in the process chamber to provide a process gas for processing the substrate into the process chamber. The method of claim 9, wherein the first cooling gas line
A first gas distribution groove formed in a circle to have a first diameter with respect to the center of the ceramic,
The second cooling gas line
And a second gas distribution groove formed in a circle so as to have a second diameter larger than the first diameter based on the center of the ceramic.

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