KR100983556B1 - Plasma reactor having multi-core plasma generator - Google Patents

Abstract

The plasma reactor having a multi-core plasma generator of the present invention comprises a reactor body, a multi-core plasma generator constituting one surface of the reactor body and providing induced electromotive force for plasma generation into the reactor body, and wirelessly to the multi-core plasma generator. A main power supply for supplying a frequency power source, and a laser source for configuring a multi-laser scanning line consisting of a plurality of laser scanning lines in the reactor body. The plasma reactor having the multi-core plasma generator of the present invention can scan the multi-core plasma generator and the multi-laser scanning line uniformly and widely on the upper part of the substrate, thereby processing a large-area plasma for treating a large-area target substrate. The reactor can be easily implemented and the process yield can be improved by efficiently improving various process conditions.

Plasma, inductive coupling, magnetic core, current balance, laser

Description

Plasma reactor with multi-core plasma generator {PLASMA REACTOR HAVING MULTI-CORE PLASMA GENERATOR}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma reactor having a multi-core plasma generator. Specifically, the present invention relates to a plasma reactor having a multi-core plasma generator and a multi-laser scanning line. The present invention relates to a plasma reactor having a multi-core plasma generator capable of increasing efficiency.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. Active gases are widely used in various fields and are used in various semiconductor manufacturing processes for manufacturing devices such as integrated circuit devices, liquid crystal displays, solar cells, etc., for example, etching, deposition, cleaning and ashing. It is used in various ways such as ashing.

There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control. However, when the capacitively coupled electrode is enlarged in order to process an enlarged substrate, the electrode may be deformed or damaged by deterioration of the electrode. In this case, the electric field strength may be uneven, which may result in uneven plasma density and contaminate the inside of the reactor. In the case of an inductively coupled plasma source, it is also difficult to obtain a uniform plasma density when the area of the induction coil antenna is increased. Inductively coupled plasma sources using a transformer can obtain a high density of plasma relatively easily, but the plasma uniformity is affected by structural features. Therefore, efforts have been made to improve the plasma source structure to obtain a uniform high density plasma.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as ultra miniaturization of semiconductor devices, the enlargement of silicon wafer substrates, substrates to be processed such as glass or plastic substrates for manufacturing semiconductor circuits, and the development of new materials to be processed. Plasma treatment technology is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates. Furthermore, various semiconductor manufacturing apparatuses using lasers have been provided. Semiconductor manufacturing processes using lasers have been widely applied to various processes such as deposition, etching, annealing, cleaning, and the like on a substrate to be processed. In the case of a semiconductor manufacturing process using such a laser, the above-described problems exist.

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma reactor having a multi-core plasma generator that can easily generate a large area and can uniformly generate and maintain a large area of plasma by providing a multi-laser scanning line.

Another object of the present invention is to provide a plasma reactor having a multi-core plasma generator having a multi-laser scanning line and capable of uniformly generating high-density plasma by uniformly controlling the current balance between the multi-core plasma generators.

One aspect of the present invention for achieving the above technical problem relates to a plasma reactor having a multi-core plasma generator. A plasma reactor having a multi-core plasma generator of the present invention comprises: a reactor body; A multi-core plasma generator constituting one surface of the reactor body and providing induced electromotive force for plasma generation into the reactor body; A main power supply for supplying radio frequency power to said multi-core plasma generator; And a laser source for constructing a multi-laser scanning line consisting of a plurality of laser scan lines in the reactor body.

In one embodiment, the multi-core plasma generator comprises: a dielectric plate constituting one surface of the reactor body; And a plurality of core groups having a plurality of magnetic cores and primary windings in which magnetic flux entrances and exits are disposed toward the dielectric plate.

In one embodiment, a distribution circuit for distributing radio frequency power provided from said main power source to said plurality of core groups.

In one embodiment, an impedance matcher is arranged between the main power supply and the distribution circuit to perform impedance matching.

In one embodiment, the distribution circuit comprises a current balancing circuit for adjusting the balance of the current supplied to the primary windings of the plurality of core groups.

In one embodiment, the current balancing circuit includes a plurality of transformers for balancing the current by driving the primary windings of the plurality of core groups in parallel, the primary side of the plurality of transformers are connected in series, the secondary side is the plurality of Corresponding primary windings of the four core groups.

In one embodiment, the secondary side of the plurality of transformers each comprises a grounded intermediate tap, one end of the secondary side outputs a constant voltage and the other end a negative voltage, respectively, the constant voltage is the primary winding of the plurality of core groups At one end of the negative voltage is provided to the other end of the primary winding of the plurality of core groups.

In one embodiment, the current balancing circuit includes a voltage level adjusting circuit that can vary the current balancing adjusting range.

In one embodiment, the current balancing circuit comprises a compensation circuit for compensation of leakage current.

In one embodiment, the current balancing circuit includes a protection circuit for preventing damage due to transient voltage.

In one embodiment, the dielectric plate includes a plurality of gas injection holes, and includes a gas supply unit for supplying gas into the reactor body through the gas injection holes.

In one embodiment, the gas supply comprises at least two gas supply channels having gas supply paths independent of each other.

In one embodiment, the reactor body has a support on which a substrate to be processed is placed, and the support is either biased or unbiased.

In one embodiment, the support is biased by a single frequency power supply or two or more different frequency power supplies.

In one embodiment, the support includes an electrostatic chuck.

In one embodiment, the support comprises a heater.

In one embodiment, the support has a structure that is linearly or rotationally movable parallel to the substrate to be processed, and includes a drive mechanism for linearly or rotationally moving the support.

In one embodiment, the reactor body includes a laser transmission window for scanning a laser beam therein, and the laser source allows the laser beam to be scanned into the reactor body through the laser transmission window so that the multi-laser. One or more laser sources for forming the scanning line.

In one embodiment, the laser transmission window comprises two windows configured to face the side wall of the reactor body, wherein the laser source comprises a laser beam generated from the one or more laser sources between the two windows. It includes a plurality of reflectors reflecting to form the multi-laser scanning line.

According to the plasma reactor having the multi-core plasma generator of the present invention, a large-area plasma can be generated by increasing the core group to suit the size of the large-area to-be-processed substrate, thereby facilitating the large area of the plasma reactor and balancing the current. A uniform current supply is made by the circuit, and uniform gas supply is made by the one or more gas supply channels, thereby uniformly generating high density plasma. In addition, the multi-core plasma generator and the multi-laser scanning line can be uniformly and widely scanned on the upper part of the target substrate, so that a large-area plasma reactor for processing a large target substrate can be easily implemented. Can be efficiently improved to improve process yield.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a view showing a plasma reactor according to a preferred embodiment of the present invention.

Referring to FIG. 1, the plasma reactor 10 of the present invention constitutes a reactor body 11, one surface of the reactor body 11, and provides multiple cores for providing induced electromotive force for plasma generation into the reactor body 11. Multi-laser scanning line comprising a plasma generator 30, a main power supply 40 for supplying radio frequency power to the multi-core plasma generator 30, and a plurality of laser scan lines 82 inside the reactor body 40. It comprises a laser source 80 for constructing a. The reactor body 11 is provided with a support 12 on which the substrate 13 to be processed is placed inside the upper portion. The multi-core plasma generator 30 is provided at the inner bottom of the reactor body 11. The gas supply unit 20 is configured under the multi-core plasma generator 30 to supply the reaction gas provided from a gas park (not shown) through a plurality of gas injection holes 32 configured in the multi-core plasma generator 30. It feeds into the inside of (11). The radio frequency power generated from the main power supply 40 is supplied to the plurality of primary windings 33 provided in the multi-core plasma generator 30 through the impedance matcher 41 and the distribution circuit 50. The laser source 80 provides a laser for constructing a multi-laser scanning line consisting of a plurality of laser scan lines 82 inside the reactor body 11. The plasma generated by the capacitively coupled electrode assembly 30 and the multi-laser scanning line is generated inside the reactor body 11 to perform substrate processing on the substrate 13 to be processed.

The plasma reactor 10 is provided with a support body 12 on which the reactor body 11 and the substrate 13 to be processed are placed. The reactor body 11 may be made of metal material such as aluminum, stainless steel, copper or coated metal, for example anodized aluminum or nickel plated aluminum. Alternatively, it may be made of refractory metal. As another alternative, it is also possible to fabricate the reactor body 11 in whole or in part with an electrically insulating material such as quartz, ceramic. As such, the reactor body 11 may be made of any material suitable for carrying out the intended plasma process. The structure of the reactor body 11 may have a structure suitable for uniform generation of the plasma, for example, a circular structure or a square structure, or any other structure depending on the substrate 13 to be processed.

The substrate 13 to be processed is, for example, substrates such as wafer substrates, glass substrates, plastic substrates, etc. for the manufacture of various devices such as semiconductor devices, display devices, solar cells, and the like. The plasma reactor 10 is connected to a vacuum pump (not shown). The plasma reactor 10 is subjected to plasma processing on the substrate 13 under low pressure below atmospheric pressure. However, the plasma reactor 10 of the present invention may also be implemented as an atmospheric pressure plasma processing system for processing a feature substrate at atmospheric pressure.

2 is a partial cross-sectional view of the bottom of a plasma reactor showing a gas supply configured at the bottom of a multi-core plasma generator.

Referring to FIG. 2, the gas supply unit 20 is installed below the multi-core plasma generator 30. The gas supply unit 20 includes a gas inlet 21 connected to a gas supply source (not shown), one or more gas distribution plates 22, and a plurality of gas inlets 23. The plurality of gas injection holes 23 correspond to the plurality of gas injection holes 32 of the dielectric plate 34 through the gas injection pipe 24, respectively. The reaction gas input through the gas inlet 21 is evenly distributed by the one or more gas distribution plates 22 and the reactor body 11 through the plurality of gas inlets 23 and the plurality of gas injection holes 32 corresponding thereto. Sprayed evenly inside

3 is a perspective view showing a multi-core plasma generator.

Referring to FIG. 3, the multi-core plasma generator 30 includes a dielectric plate 34 constituting a lower surface of the reactor body 11 and a plurality of magnetic cores 31 having magnetic flux entrances and exits toward the dielectric plate 34. And a plurality of core groups having a primary winding 33. In each core group, a plurality of horseshoe-shaped magnetic cores 31 form a row, and a plurality of magnetic cores 31 constituting each row are wound in a bundle and the primary winding 33 is wound. The primary windings 33 wound around the plurality of magnetic cores 31 are connected to the main power supply 40 through the divider 50 and the impedance matcher 41. When the radio frequency is supplied from the main power source 40 to the primary winding 33, the magnetic field generated by the plurality of core groups is transferred into the reactor body 11 through the dielectric plate 34. As a result, induced electromotive force is transferred to the inside of the reactor body 11 so that plasma discharge is performed. At this time, since the plurality of core groups are uniformly disposed on the dielectric plate 34 as a whole, uniform plasma discharge is performed.

The dielectric plate 34 includes a plurality of gas injection holes 32. The plurality of gas injection holes 32 are arranged in the longitudinal direction at regular intervals between the plurality of core groups. The dielectric plate 34 is installed to constitute the bottom of the reactor body 11, but may be installed along the sidewall of the reactor body 11 to increase the plasma treatment efficiency. Or it may be installed on both the bottom and side walls. Although not shown in detail, the dielectric plate 34 may include a cooling channel or a heating channel for proper temperature control.

4 is a view showing a modification of the gas supply unit constituting the dual gas supply channel.

Referring to FIG. 4, the gas supply unit 20 may include two or more separate gas supply channels to separate different gases and supply them to the inside of the reactor body 11 to increase plasma processing efficiency. For example, the gas supply unit 20 may have a part of the gas injection hole 32-which is different from the first gas supply path that supplies the first gas into the reactor body 11 through the gas injection hole 32-1. It may be provided with a second gas supply path for supplying gas into the interior of the reactor body 11 through 2). The first and second gas supply paths of the gas supply unit 20 are configured to separate and supply different kinds of reactant gases as independent gas supply paths. The first gas supply path includes a gas supply pipe 24 connected to some gas injection holes 32-1, and the second gas supply path includes another gas supply pipe 26.

5 to 7 are views for explaining various configuration methods of the multi-laser scanning line.

5 to 7, the reactor body 11 has laser transmission windows 86 and 87 for scanning a laser beam therein. The laser transmissive windows 86, 87 may be comprised of two windows 86, 87 configured to face the side walls of the reactor body 11. The two windows 86 and 87 may be installed to face the reactor body 11 so as to face each other, and may have a slit structure having the same length. The laser source 80 includes one or more laser sources 84. The laser source 84 scans a laser beam into the reactor body 11 through the laser transmission windows 86 and 87 to form a plurality of laser scan lines 82 inside the reactor body 11 to perform multi-laser scanning. Lines make up.

For example, as shown in FIG. 5, a plurality of laser sources 84 are arranged in proximity to the laser transmission window 86 on one side, and correspondingly, a plurality of laser sources 84 in the vicinity of the laser transmission window 87 on the other side. Laser terminations 85 may be configured. Alternatively, as shown in FIG. 6, a plurality of laser sources 84 may be configured at intervals, and a plurality of reflectors 83 may be installed therebetween so that the laser beams generated from the laser sources 84 may be divided into two laser transmission windows. The plurality of laser scanning lines 82 can be formed by reciprocating and reflecting with the 86 and 87 interposed therebetween. Alternatively, as shown in FIG. 7, only one laser source 84 may be configured and a plurality of reflectors 83 may be configured. As such, the multi-laser scanning line may be configured inside the reactor body 11 using one or more laser sources 84, a plurality of reflectors 83, and one or more laser terminations 85. And although a more detailed configuration and description have been omitted, those skilled in the art will appreciate that an optical system of a suitable structure may be used to scan a laser beam into the interior of the reactor body 11.

Again, referring to FIG. 1, a support 12 for supporting the substrate 13 to be processed is provided inside the reactor body 11. The support 12 is connected and biased to bias power sources 42 and 43. For example, two bias power sources 42 and 43 that supply different radio frequency power are electrically connected to and biased through the impedance matcher 44 to the support 12. The dual bias structure of the support 12 facilitates plasma generation inside the reactor body 11, and further improves plasma ion energy control to improve process yield. Alternatively, it may be modified to a single bias structure. Alternatively, the support 12 may be modified to have a zero potential without supplying a bias power supply. The substrate support 12 may include an electrostatic chuck. Alternatively, the substrate support 12 may include a heater.

Support 12 may be of a fixed type. Alternatively, the support 12 has a structure capable of linearly or rotationally moving in parallel with the substrate 13 to be processed, and includes a driving mechanism 4 for linearly or rotationally moving the support 12. This moving structure of the support 12 is for increasing the processing efficiency of the substrate 13 to be processed. An exhaust baffle 6 may be configured at an inner upper portion of the reactor body 11 to uniformly discharge the gas discharged to the gas outlet 3 configured at the upper portion of the reactor body 11.

The primary windings 33 of the plurality of core groups of the multi-core plasma generator 30 are driven by receiving the radio frequency power generated from the main power supply 40 through the impedance matcher 41 and the distribution circuit 50. A plasma capacitively coupled to the inside of the reactor body 11 is induced. The main power supply 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. The radio frequency power generated from the main power source 40 is provided to the plurality of primary windings 33 through the impedance matcher 41. To this end, a distribution circuit 50 may be provided. The distribution circuit 50 distributes and supplies the radio frequency power provided from the main power supply 40 to the primary winding 33 of the plurality of core groups so that the plurality of core groups are driven in parallel. Preferably, distribution circuit 50 may be comprised of a current balancing circuit. The current balancing circuit automatically balances the currents supplied to the plurality of primary windings 33. Thus, the plasma of a large area can be generated and maintained more uniformly.

8 is a diagram illustrating an example of a distribution circuit.

Referring to FIG. 8, the distribution circuit 50 includes a current balancing circuit composed of a plurality of transformers 52 which drive a plurality of primary windings 33 in parallel and balance current. The primary side of the plurality of transformers 52 are connected in series between the power input terminal to which the radio frequency is input and ground through the impedance matcher 41, and one end of the secondary side is correspondingly connected to the plurality of primary windings 33. The other end is commonly grounded. The plurality of transformers 52 equally divide the voltage between the power input terminal and the ground and output the divided plurality of divided voltages to one end of the plurality of primary windings 33. The other end of the plurality of primary windings 33 is commonly grounded.

Since the current flowing to the primary side of the plurality of transformers 52 is the same, the power supplied to the plurality of primary windings 33 is also the same. When the impedance of any one of the plurality of primary windings 33 is changed to change the amount of current, the plurality of transformers 52 may interact with each other to achieve a current balance. Therefore, the current supplied to the plurality of primary windings 33 is continuously and automatically adjusted uniformly. In the plurality of transformers 52, the winding ratios of the primary side and the secondary side are basically set to 1: 1, but this can be changed.

Although not shown in the drawing, the distribution circuit 50 including the current balancing circuit as described above may include a protection circuit for preventing a transient voltage from occurring in the plurality of transformers 52. The protection circuit prevents the transient voltage from increasing in the transformer due to a defect such as when one of the plurality of transformers 52 is electrically open. The protection circuit of this function may be implemented by connecting a varistor to both ends of each primary side of the plurality of transformers 52, or may be implemented using a constant voltage diode such as a Zener diode. have. In addition, a compensation circuit such as a compensation capacitor 51 for compensating for leakage current may be added to each transformer 52 in the distribution circuit 50.

9-11 illustrate various variations of the distribution circuit.

With reference to FIG. 9, one variant of distribution circuit 50 includes an intermediate tab with the secondary sides of the plurality of transformers 52 respectively grounded. Here, one end of the secondary side outputs a constant voltage and the other end of a negative voltage. The constant voltage is provided to one end of the plurality of primary windings 33 and the negative voltage to the other end of the plurality of primary windings 33.

10 and 11, another variant distribution circuit 50 may include a voltage level adjustment circuit 60 that can vary the current balancing adjustment range. The voltage level adjustment circuit 60 includes a coil 61 having a multi tap and a multi tap switching circuit 62 for connecting one of the multi taps to ground. The voltage level regulating circuit 60 applies a voltage level variable according to the switching position of the multi-tap switching circuit 62 to the distribution circuit 50, and the distribution circuit 50 is provided by the voltage level regulating circuit 60. The current balance adjustment range is varied by the voltage level determined.

The plasma reactor 10 of the present invention as described above, as shown in Figure 12, as well as the structure in which the support structure 12 is installed on top of the reactor body 11, as shown in Figure 1, the reactor body It may be composed of a structure located at the bottom of (11). In this case the exhaust baffle 6 and the gas outlet 3 would be configured at the bottom of the reactor body 11, and the multi-core plasma generator 30 and the gas supply 20 would be at the top of the reactor body 11. It is composed.

The embodiment of the plasma reactor having a multi-core plasma generator of the present invention described above is merely exemplary, and various modifications and equivalent other embodiments are possible to those skilled in the art to which the present invention pertains. You can see that. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

 The plasma reactor having the multi-core plasma generator of the present invention can be very usefully used in plasma processing processes for forming various thin films, such as fabrication of semiconductor integrated circuits, flat panel display fabrication, and solar cell fabrication. Plasma reactor having a multi-core plasma generator of the present invention can generate a large area of plasma by increasing the core group to suit the size of the large substrate to be processed, so that the large area of the plasma reactor is easy and the current balancing circuit By the uniform current supply is made, the uniform gas supply is made by one or more gas supply channels to uniformly generate high density plasma. In addition, the multi-core plasma generator and the multi-laser scanning line can be uniformly and widely scanned on the upper part of the substrate, so that a large-area plasma reactor for processing a large-area substrate can be easily implemented. Can be efficiently improved to improve process yield.

1 is a view showing a plasma reactor according to a preferred embodiment of the present invention.

2 is a partial cross-sectional view of the bottom of a plasma reactor showing a gas supply configured at the bottom of a multi-core plasma generator.

3 is a perspective view showing a multi-core plasma generator.

4 is a view showing a modification of the gas supply unit constituting the dual gas supply channel.

5 to 7 are views for explaining various configuration methods of the multi-laser scanning line.

8 is a diagram illustrating an example of a distribution circuit.

9-11 illustrate various variations of the distribution circuit.

12 is a view showing a modification of the installation structure of the plasma reactor.

* Description of the symbols for the main parts of the drawings *

3: gas outlet 4: drive mechanism

6: exhaust baffle 10: plasma reactor

11: reactor body 12: support

13: substrate to be processed 20: gas supply part

21: gas inlet 22: gas distribution plate

23: gas inlet 24, 26: gas supply pipe

30: multi-core plasma generator 31: magnetic core

32: gas injection hole 33: coil

34: dielectric plate 40: main power supply

41: impedance matcher 42, 43: bias power supply

44: impedance matcher 50: distribution circuit

51: compensation capacitor 52: transformer

53: middle tap 60: voltage level adjustment circuit

61: coil 62: multi-tap switching circuit

80: laser source 82: multi laser scanning line

83: reflector 85: laser termination

Claims (19)

Reactor body; A multi-core plasma generator constituting one surface of the reactor body and providing induced electromotive force for plasma generation into the reactor body; A main power supply for supplying radio frequency power to said multi-core plasma generator; A laser source for constructing a multi-laser scanning line consisting of a plurality of laser scan lines in the reactor body; And A distribution circuit for distributing radio frequency power provided from the main power source to a plurality of core groups provided in the multi-core plasma generator, The distribution circuit comprises a current balancing circuit for adjusting the balance of the current supplied to the primary windings of the plurality of core groups, The multi-core plasma generator A dielectric plate constituting one surface of the reactor body; And A plasma reactor having a multi-core plasma generator comprising a plurality of magnetic cores with a magnetic flux entrance and a plurality of core groups having a primary winding towards the dielectric plate. delete delete The method of claim 1, And a multi-core plasma generator comprising an impedance matcher configured between the main power supply and the distribution circuit to perform impedance matching. delete The method of claim 1, The current balancing circuit includes a plurality of transformers for driving current balance of the primary windings of the plurality of core groups in parallel; The primary side of the plurality of transformers is connected in series, and the secondary side has a multi-core plasma generator connected correspondingly to the primary windings of the plurality of core groups. The method of claim 6, Secondary sides of the plurality of transformers each include a grounded middle tab, one end of the secondary side outputs a constant voltage and the other end a negative voltage, Wherein the constant voltage is provided at one end of the primary windings of the plurality of core groups and the negative voltage is provided at the other end of the primary windings of the plurality of core groups. The method of claim 1, Wherein said current balancing circuit includes a voltage level adjusting circuit capable of varying a current balancing adjusting range. The method of claim 1, Wherein said current balancing circuit comprises a compensation circuit for compensating for leakage current. The method of claim 1, Wherein said current balancing circuit comprises a protection circuit for preventing damage caused by transient voltages. The method of claim 1, The dielectric plate includes a plurality of gas injection holes, Plasma reactor having a multi-core plasma generator including a gas supply for supplying gas into the reactor body through the gas injection hole. The method of claim 11, Wherein said gas supply comprises at least two gas supply channels having gas supply paths independent of each other. The method of claim 1, Wherein the reactor body has a support on which a substrate to be processed is placed, and the support is either biased or unbiased. The method of claim 13, Wherein the support has a multi-core plasma generator biased by a single frequency power supply or two or more different frequency power supplies. The method of claim 13, The support is a plasma reactor having a multi-core plasma generator comprising an electrostatic chuck. The method of claim 13, The support is a plasma reactor having a multi-core plasma generator comprising a heater. The method of claim 13, And the support has a structure capable of linearly or rotationally moving in parallel with the substrate to be processed and comprising a drive mechanism for linearly or rotationally moving the support. The method of claim 1, The reactor body includes a laser transmission window for injecting a laser beam therein, Wherein said laser source comprises one or more laser sources for causing a laser beam to be scanned into said reactor body through said laser transmission window to form said multi laser scanning line. The method of claim 18, The laser transmission window comprises two windows configured to face the side wall of the reactor body, Wherein said laser source includes a plurality of reflectors for reflecting a laser beam generated from said at least one laser source across said two windows to form said multi laser scanning line.

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