KR100946441B1 - LED having Vertical- Structured Electrodes and Manufacturing Method thereof - Google Patents

Abstract

A multilayer thin film structure grown on a sapphire substrate having a thickness of 10 μm or less, an epitaxial layer including an n-GaN layer, an active layer, and a p-GaN layer, and a conductive support plate attached to a lower portion of the n-GaN layer; and a side electrode lead formed on the sidewall of the n-GaN layer, the side electrode lead providing a current path between the support plate and the low resistance buffer layer of at least the n-GaN layer to supply current to the active layer. It relates to a polar nitride light emitting device.

According to the present invention, the thermal and electrical characteristics of the device are improved, and the efficiency of the device is significantly increased. In particular, when driven at a large power and a large current, the heat dissipation characteristics are greatly improved.

Light emitting element, vertical electrode, side electrode, heat radiation, electric resistance

Description

Light emitting device having a vertical electrode structure and a method of manufacturing the same {LED having Vertical- Structured Electrodes and Manufacturing Method

The present invention relates to a semiconductor light emitting device and a method for manufacturing the same. In particular, the sapphire substrate is thinned to solve heat dissipation and electrical problems caused by driving at high power while maintaining the advantages of the layer structure characteristics grown using the sapphire substrate. The present invention relates to a high-output vertical electrode type light emitting device for improving heat dissipation and light emission characteristics of a device by forming a metal lead that processes and forms a metal lead that functions as a path for heat and current, thereby improving the heat dissipation and light emission characteristics of the device. .

In the conventional gallium nitride semiconductor light emitting device 10, the light emitting device chip is separated into unit devices through a device structure fabrication process of forming an epitaxial layer 13 by epitaxy on a sapphire 14, which is a substrate. In this case, the thickness of the sapphire 14 of the unit chip is about 80 ~ 100μm. However, since sapphire is an insulator, current concentration is generated by horizontally forming the n-electrode 11 and the p-electrode 12 on the upper layer as shown in FIG. 1, and the chip size is reduced by horizontally arranging both electrodes. In addition, since sapphire has a poor thermal conductivity, heat generated during high power driving is not sufficiently discharged, thereby limiting device performance. The thermal conductivity of the sapphire substrate is about 40 W / mK. If the thickness of the sapphire substrate is about 80 microns, the thermal resistance value is about 3.5 ° C / W, which accounts for about 90% of the thermal resistance of the entire device system. This characteristic of sapphire has been a major cause of lowering the reliability of the device, especially when driven with a large current to realize a high density, high power light source in recent years.

In order to solve this problem, a laser lift-off method has recently been used to separate the sapphire substrate and the epitaxy layer by decomposing gallium nitride at the interface between the sapphire substrate and the gallium nitride semiconductor layer using the high-density energy of the high power laser. FIG. 2 shows a vertical electrode type light emitting device 20 fabricated by separating sapphire and attaching a conductive support plate 26 by this laser lift-off method. However, in the case of the lift-off method, there are many limitations in the application due to the problem of deterioration of the photoelectric properties of the device due to mechanical and thermal damages caused by laser irradiation and a decrease in production yield.

In addition, a method of forming and separating TiN foil from Hitachi Cable Co., Ltd. between a sapphire substrate and a gallium nitride semiconductor, polishing separation after fabrication of a thin film on a Si substrate of Sumitomo Corporation, or a lift-off method using wet etching technology of Tohoku University of Japan, etc. Although various techniques are known, they are not yet established as reliable technologies.

In addition, even in the process of forming a device structure using a surrogate substrate, there is a problem that the production yield is greatly reduced due to the difference in lattice constant between the sapphire substrate and the gallium nitride semiconductor. For example, at a growth temperature of about 1000 ° C., the lattice constant of the gallium nitride semiconductor is smaller than the lattice constant of the sapphire substrate, but the substrate is bent in a concave shape, but the substrate is bent in a convex form at room temperature due to the difference in thermal expansion coefficient between the two materials. For this reason, it is difficult to attach or bond to a surrogate substrate during the process using such a substrate, which leads to a decrease in production yield.

Therefore, attempts have been made to remove or partially remove the entire sapphire substrate. However, when the entire sapphire substrate is removed, electrical properties deteriorate due to many crystal defects in the gallium nitride semiconductor, particularly defects in the buffer layer. It was very difficult to produce uniform devices or to obtain reproducibility of production.

An object of the present invention is to improve the electrical and thermal properties of a light emitting device by achieving a vertical electrode structure in a manner that does not mechanically and electrically damage the p-n junction of the light emitting device and the active layer and GaN layer including the same.

In addition, another object of the present invention is to provide a light emitting device capable of reducing the chip size and increasing the mounting density of the substrate by preventing thinning of the sapphire substrate to prevent deterioration of the characteristics of the light emitting device and still maintaining the advantages of the vertical electrode structure.

Vertical electrode nitride light emitting device of the present invention for achieving the above object is a multilayer thin film structure grown on a sapphire substrate of 10μm or less thickness epitaxial layer including an n-GaN layer, an active layer, p-GaN layer; A conductive support plate attached to a lower portion of the n-GaN layer; And a side electrode lead formed on at least a portion of a sidewall of the n-GaN layer, wherein the side electrode lead is a current path between at least a low resistance buffer layer of the n-GaN layer and the support plate to supply current to the active layer. It characterized in that to provide.

In addition, the n-GaN layer may include a high electrical resistance buffer layer as a lower buffer layer.

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The metal layer may further include a metal layer formed to cover the lower surface of the sapphire, and the metal layer may be integrally formed with the connection lead.

A method of manufacturing a vertical electrode type nitride light emitting device according to the present invention includes (a) an epitaxy layer forming step of growing an n-GaN layer, an active layer, and a p-GaN layer on a sapphire substrate; (b) forming a plurality of grooves spaced apart from each other by etching leaving a portion of the thickness of the n-GaN layer of the epitaxy layer; (c) attaching a surrogate substrate to the top surface of the epitaxy layer using eutectic bonding or thermal thermocompression; (d) wet etching the sapphire substrate to thin the sapphire, and exposing the n-GaN layer surface by etching a portion of the sapphire at a position aligned vertically with the groove formed in the step (b) to form a groove; (e) forming a metal layer on the sapphire, forming a connection lead along the sidewall surface of the sapphire through the groove formed in step (d) so as to contact the exposed n-GaN layer; (f) attaching the conductive support plate to the metal layer formed on the sapphire using eutectic bonding or thermocompression bonding; (g) removing the surrogate substrate and removing foreign substances from the surface; (h) dry etching the neighboring regions of the grooves formed in step (b) to form extended grooves, which are etched to a depth up to n-GaN layer, where n remains at the bottom of the grooves formed in step (b) Removing the GaN layer part as well so that the metal layer formed in step (e) is exposed; (i) forming a side electrode lead, which is part of the n-electrode, on the sidewall surface of the n-GaN layer by depositing metal in the expansion groove formed in the step (h), and the electrical connection with the exposed metal layer in the step (h) Making it happen; And (j) separating the device to cut along at least a portion of the groove formed in step (b).

In the present invention, by using a conventional grinding, lapping, polishing process and wet etching to form a thin sapphire to 10μm or less, to have a structure to increase the heat dissipation efficiency while maintaining the heat release path, the electrode array in a conventional horizontal structure The vertical structure has the effect of improving the heat resistance and light emission characteristics of the conventional light emitting device structure.

In particular, according to the present invention, there is an effect that the problem of yield reduction in the laser liftoff method is solved. In addition, it is possible to prevent the device active layer caused by removing the sapphire substrate, the driving voltage of the device due to the electrical resistance generated at the junction between the metal and the n-type gallium nitride semiconductor, and the energy loss problem.

Compared to the prior art, the present invention improves thermal efficiency of the device by drastically improving the thermal characteristics of the device, and particularly when driving with a large power and a large current. Optical performance is greatly improved. In addition, due to the addition of a metal layer reflective structure having a high reflectance, light utilization efficiency and light performance are improved.

In terms of manufacturing, there is an advantage of mass production that can simultaneously produce a large amount at a time, even if a small amount of production, manufacturing cost is low due to uniformity, yield, price reduction. In particular, despite the high-power light source products, there is no additional increase in raw material costs, resulting in energy savings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

(First embodiment)

Figure 3 shows a side cross-sectional view of a light emitting device according to an embodiment of the present invention. While maintaining the electrical insulating layer sapphire 360 to a thin thickness, while bonding the support plate 399 excellent in electrical conductivity and thermal conductivity by bonding the thermal properties and the advantages of using the conventional sapphire substrate and the electrical properties of the device as it is It is a structure of a device that can drive a large current by improving its optical characteristics. The layer structure of the device according to the present embodiment is the p-electrode 310, the p-GaN layer 320, the active layer 330, the n-GaN layer 340, the sapphire 360, and the reflective metal layer 370 in order from above. ) And a conductive support plate 399. The p-GaN layer 320, the active layer 330, and the n-GaN layer 340 are epitaxial layers 349 grown on the sapphire 360.

Here, it is preferable to form the thickness of the sapphire 360 which is an electrical insulating layer thinner than 10 μm to reduce the vertical thermal resistance. However, since the sapphire 360 is still an electrically insulating layer, the connection lead of metal formed on the outer wall of the sapphire 360 and the reflective metal layer 370 extending integrally with the connection lead to cover the bottom surface of the sapphire 360 are formed. And a side electrode lead 351 of the n-electrode 350 on the outer wall of the n-GaN layer 340 so as to be connected up and down through the connection lead to support plate 399 from the n-GaN layer 340. By providing a conductive path for bypassing the sapphire 360 with a) it is possible to make a vertical electrode structure while maintaining a portion of the sapphire 360. Hereinafter, the lead constituting the n-electrode 350 formed on the outer wall of the n-GaN layer 340 is referred to as a 'side electrode lead 351'. The side electrode lead 351 is integrally formed with the connection lead to provide a current path as well as a heat dissipation path for dissipating heat generated in the high power operation of the device through the lower support plate 399.

In addition, when the n-GaN layer 340 is grown on the sapphire 360, due to lattice constant mismatch, an electrically high resistance layer is formed as the lowermost buffer layer, and an n-contact layer, which is an electrically low resistance buffer layer, is formed thereon. Is formed. Therefore, although not explicitly shown in FIG. 3, a buffer layer, which is a high electrical resistance layer, exists as a lower buffer layer of the n-GaN layer 340. The side electrode lead 351 bypasses the high electrical resistance layer to support the plate. An electrical connection path is provided from 399 to the n-contact layer, which is a low resistance buffer layer.

Meanwhile, the p- and n-GaN layers 320 and 340 may have various multilayer stack structures according to the purpose, but the present invention is generally applied to a pn junction device having a nitride semiconductor layer structure grown on the sapphire 360. Therefore, the description of the specific layer structure is omitted. In addition, although GaN is exemplified above, the present invention is generally applied to nitride semiconductors.

In FIG. 3, the support plate 399 shows the deposition of the metal film 380 on the upper and lower surfaces of the silicon substrate 390. However, the present invention is not limited thereto, and the support plate 399 may provide structural support in the following. A conductive substrate is generally referred to.

FIG. 4 is a step-by-step illustration of the process of manufacturing the semiconductor device of FIG. 3, and the following describes the manufacturing process of the device according to the present invention in detail with reference to FIG. 4.

Step (a): First, an epitaxial layer 349 of the n-GaN layer 340, the active layer 330, and the p-GaN layer 320 is formed on the sapphire 360, which is a substrate.

Step (b): a portion of the upper layer of the epitaxy layer 349 region is removed by laser, dry etching, or wet etching to make side electrode leads 351, which are current and heat paths to the support plate 399, Ditch-shaped grooves are formed at intervals corresponding to the device size. A plurality of grooves are formed to be spaced apart from each other at regular intervals in the horizontal and vertical directions. At this time, n-GaN is used as a basis for forming the reflective metal layer 370 of the sapphire 360 after leaving a thickness of about 1 ~ 2um, the width of the groove formed by etching is about 1 ~ 100um. Etching also greatly reduces the warpage of the substrate, which will facilitate the process of thinning the sapphire 360 substrate, bonding to the surrogate substrate, and transferring the substrate.

Step (c): an adhesive material 361 consisting of any one or combination of Au, Ag, Ti, Sn, Pd, Rd, Pt, Ta, Cr, Ni, or a suitable electric wax or adhesive having heat and acid resistance. After forming on the attaching surface of the receptor 362 and the upper surface of the epitaxy layer structure, the surrogate substrate 362 is formed on the upper surface of the epitaxy layer structure by using eutectic bonding or thermocompression bonding. Attach. The surrogate substrate 362 uses materials such as sapphire, Si, GaAs, SiC, InP, InAs, GaN ', or the like.

Step (d): The substrate is made of a thin film of sapphire 360, the process is first to 50um or less using grinding, lapping or polishing, and then only 10um or less sapphire 360 by using wet etching The remainder is etched, and the etchant used is hydrochloric acid (HCL), nitric acid (H3PO4), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H2SO4), phosphoric acid (H3PO4), and chromium oxide (CrO3). ) And aluene (4H3PO4 + 4CH3COOH + HNO3 + H2O) or a mixture thereof, and the temperature of the solution at the time of etching is preferably maintained between 200 and 400 ° C. Thereafter, a portion of the sapphire 36 is removed by dry etching or wet etching at the positions aligned with the grooves formed in step (b) to form the grooves. At this time, the width of the groove is etched to 1 to 100um to expose the n-GaN layer 340, and the depth to which the n-GaN layer 340 is etched is within 1um and the n-GaN layer 340 penetrates up and down. Do not let. On the other hand, dry etching may use the method of inductively coupled plasma (ICP RIE), or electron cyclotron (ECR) reactive ion etching (RIE) using gas of BCl3, HBr, Cl2, Ar, or CCl2F2 and a combination thereof. have.

Step (e): After the etching of the step (d) is completed, the surface washing is sufficient, and then, Pd, Rh, Ta, Ni, Cr, Au, Ti, Pt, Al, to 1um ~ 10um thickness on the sapphire 360 surface A reflective metal layer 370 having a multilayer structure including a metal such as Ag and a mixture thereof is continuously formed by plating or vapor deposition, and the reflective metal layer 370 is formed through a groove formed in step (d). A connection lead is formed along the sidewall of 36 to contact the exposed n-GaN layer 340. In this case, it is preferable to use a metal having a high reflectance if possible and the last metal layer is formed of a eutectic metal for bonding to the support plate 399 in the future. In this case, the reflective metal layer 37 forms a connection lead along the sidewall surface of the sapphire 360 through the groove to be in contact with the exposed n-GaN layer 340, but the part or the front surface of the sapphire 360 exposed surface To be formed at the same time.

Step (f): Sapphire 360 to the support plate 399 using eutecting bonding or thermocompression bonding using metals such as Au, Ag, Ti, Rd, Pt, Ta, Cr, AuSn, PbSn, In, etc. It is attached to the reflective metal layer 370 formed above. At this time, the support plate 399 is made of a material such as Si, GaAs, InP, InAs, SiC, Cu, AlN having a specific resistance of 20Ω-cm or less to improve electrical and thermal conductivity, and Cr, Ni, Au, AuGe for ohmic contact. One of Ti, Pt, or a combination material of these metals is deposited on the upper and lower surfaces and heat-treated to complete the support plate 399.

Step (g): Completely remove the surrogate substrate 362 attached to the upper part of the epitaxy layer 349, and completely remove the adhesive material 361 used for the adhesion using an etching solution and clean the foreign substances on the surface. Remove

Step (h): A transparent electrode (not shown) is formed on the epitaxy layer 349 and the side electrode lead 351 forming the n-electrode 350 is formed in step (b). Dry etching the adjacent area of the groove to a width of 2 ~ 100um to form an extended groove, the depth from the top layer to the low resistance buffer layer of the n-GaN layer 340, that is, at least the top of the n-GaN layer 340 Etch up to 1 ~ 2um to form MESA structure. At this time, the portion of the n-GaN layer 340 remaining in the trench formed in the step (b) is also removed to expose the reflective metal layer 370 formed in the step (e). The transparent electrode is formed of one of NiAu, ITO, ZnO, ZrB, or a combination thereof.

Step (i): metal deposition is performed on the upper surface of the epitaxy layer 349 and on the upper surface of the n-GaN layer 340 and the metal layer 370 exposed by Mesa etching in step (h), thereby forming the p-electrode 310. And an n-electrode 350. In this case, it should be noted that the electrode material is deposited on the bottom and sidewalls of the extended groove formed in step (h), so that the side electrode lead 351, which is a part of the N-electrode 350, is formed on the sidewall of the n-GaN layer 340. It is formed so that the electrical contact with the lower support plate 399 can occur through the connecting lead integral with the reflective metal layer 370. The electrode is formed by depositing or plating one of Cr, Ni, Au, Ti, Al, Pt, Al, Au, or a combination of these metals in an appropriate thickness, and then forming an ohmic contact through heat treatment.

Step (j): In order to make the devices on the substrate into individual devices, a semiconductor light emitting device chip is fabricated through a device isolation process of cutting along the grooves formed using laser, dicing, and braking methods. At this time, it is not necessary to cut along all the grooves, and may be manufactured by adjusting the size to include a plurality of unit chips so that the n-electrode 350 of the plurality of unit chips is connected to the common support plate 399.

Second Embodiment

In the second embodiment, there is a difference in that the sapphire 360 is completely removed as shown in FIG. 5 in the step (d) of the first embodiment. In this case, a portion of the n-GaN layer 340 is removed by dry etching, a metal film having high reflectance is formed thereon, and then the support plate 399 is bonded to complete the device. Other processes are the same as in the first embodiment. At this time, the metal film is not necessarily formed, and the side electrode lead 351 may be directly connected to the support plate 399. Here, even if the buffer layer, which is a high electrical resistance layer under the n-GaN layer 340, is completely removed or partially remains, the side electrode lead 351 provides an additional current and heat dissipation path, thereby providing excellent photoelectricity as in the first embodiment. Characteristics and heat dissipation characteristics.

(Third Embodiment)

In the step (d) of the first embodiment, by forming the light reflection pattern as shown in Fig. 6 on the surface of the sapphire 360, the light propagated toward the sapphire 36 from the active layer 330 of the device is diffusely reflected to provide more light. There is a difference in that the light extraction efficiency is increased by reflecting back to the light exit surface, and the rest is the same as in the first embodiment.

As described above, those skilled in the art to which the present invention pertains will understand that the present invention may be embodied in other specific forms that are variously modified within the scope of the technical idea. Therefore, the above description is merely exemplary and not limiting, and the scope of the present invention should be construed as the scope covered by the following claims.

1 is a schematic diagram of a conventional horizontal electrode element constructed on a sapphire insulating substrate.

Fig. 2 is a schematic diagram of a conventional vertical electrode device in which sapphire, an insulating substrate, is removed using a laser and attached to a support plate.

3 is a schematic view showing a vertical electrode device according to the present invention.

4 is an explanatory diagram showing step by step a process of manufacturing a vertical electrode device according to the present invention.

5 is a schematic diagram showing a modified embodiment according to the present invention.

6 is a schematic diagram showing another modified embodiment according to the present invention.

Claims (18)

An epitaxial layer including an n-GaN layer, an active layer, and a p-GaN layer, the multilayer thin film structure grown on a sapphire substrate having a thickness of 10 μm or less; A conductive support plate attached to a lower portion of the n-GaN layer; And a side electrode lead formed on at least part of sidewalls of the n-GaN layer. And the side electrode leads provide a current path between the low resistance buffer layer of the n-GaN layer and the support plate to supply current to the active layer. The vertical electrode type nitride light emitting device of claim 1, wherein the n-GaN layer includes a high electrical resistance buffer layer as a lower buffer layer. delete The vertical electrode type nitride light emitting device of claim 1, wherein a metal layer is formed on a lower surface of the n-GaN layer to be connected to the side electrode lead. delete delete (a) an epitaxial layer forming step of growing an n-GaN layer, an active layer, and a p-GaN layer on a sapphire substrate; (b) forming a plurality of grooves spaced apart from each other by etching leaving a portion of the thickness of the n-GaN layer of the epitaxy layer; (c) attaching a surrogate substrate to the top surface of the epitaxy layer using eutectic bonding or thermal thermocompression; (d) wet etching the sapphire substrate to thin the sapphire, and exposing the n-GaN layer surface by etching a portion of the sapphire at a position aligned vertically with the groove formed in the step (b) to form a groove; (e) forming a metal layer on the sapphire, forming a connection lead along the sidewall surface of the sapphire through the groove formed in step (d) so as to contact the exposed n-GaN layer; (f) attaching the conductive support plate to the metal layer formed on the sapphire using eutectic bonding or thermocompression bonding; (g) removing the surrogate substrate and removing foreign substances from the surface; (h) dry etching the neighboring regions of the grooves formed in step (b) to form extended grooves, which are etched to a depth up to n-GaN layer, where n remains at the bottom of the grooves formed in step (b) Removing the GaN layer part as well so that the metal layer formed in step (e) is exposed; (i) forming a side electrode lead, which is part of the n-electrode, on the sidewall surface of the n-GaN layer by depositing metal in the expansion groove formed in the step (h), and the electrical connection with the exposed metal layer in the step (h) Making it happen; And (j) a device isolation step of cutting along at least a portion of the groove formed in step (b); a vertical electrode type nitride light emitting device manufacturing method comprising a. The method of claim 7, wherein The thickness of the n-GaN layer remaining in the lower portion of the groove in the step (b) is 1 ~ 2um, the width of the groove is 1 ~ 100um vertical electrode type nitride light emitting device manufacturing method. The method of claim 7, wherein In the step (c) the surrogate substrate is a vertical electrode type nitride light emitting device of any one of sapphire, Si, GaAs, SiC, InP, InAs, GaN. The method of claim 7, wherein The method of manufacturing a vertical electrode nitride light emitting device of first grinding the sapphire in the step (d) by first grinding, lapping or polishing to 50um or less. The method according to claim 7 or 10, The wet-etched sapphire in step (d) has a thickness of less than 10um vertical electrode type nitride light emitting device manufacturing method. The method of claim 7, wherein The width of the groove etched in the sapphire in the step (d) is 1 ~ 100um, the depth of the n-GaN layer is etched depth of less than 1um vertical electrode type nitride light emitting device manufacturing method. The method of claim 7, wherein The etchant used in step (d) is hydrochloric acid (HCL), nitric acid (H3PO4), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H2SO4), phosphoric acid (H3PO4), chromium oxide (CrO3) and aloe A method of manufacturing a vertical-electrode nitride light emitting device, which is any one or a mixture thereof of 4H3PO4 + 4CH3COOH + HNO3 + H2O. The method of claim 7, wherein In the step (e) the metal layer is a vertical electrode type nitride light emitting device manufacturing method comprising a layer consisting of any one or a mixture of Pd, Rh, Ta, Ni, Cr, Au, Ti, Pt, Al, Ag. The method of claim 7, wherein The support plate in step (f) is Cr, Ni, Au, AuGe, Ti, on the upper and lower surfaces of the substrate made of any one material of Si, GaAs, InP, InAs, SiC, Cu, AlN having a resistivity of 20 Ω-cm or less A method of manufacturing a vertical electrode type nitride light emitting device comprising depositing and heat-treating any one of Pt or a mixture thereof. The method of claim 7, wherein The width of the expansion groove in the step (h) is 2 ~ 100um, the vertical electrode type nitride light emitting device manufacturing method to be etched to the upper 1 ~ 2um of the low resistance layer of the n-GaN layer. The method of claim 7, wherein In the step (i), the electrode is formed by depositing or plating one of Cr, Ni, Au, Ti, Al, Pt, Al, Au, or a combination of these metals, and then heat-treated to form a nitride nitride light emitting device. (a) an epitaxial layer forming step of growing an n-GaN layer, an active layer, and a p-GaN layer on a sapphire substrate; (b) forming a plurality of grooves spaced apart from each other by etching leaving a portion of the thickness of the n-GaN layer of the epitaxy layer; (c) attaching a surrogate substrate to the top surface of the epitaxy layer using eutectic bonding or thermal thermocompression; (d) removing the sapphire substrate and allowing the n-GaN layer to be exposed; (e) forming a metal layer over the exposed n-GaN layer; (f) attaching the conductive support plate to the n-GaN layer using eutectic bonding or thermocompression bonding; (g) removing the surrogate substrate and removing foreign substances from the surface; (h) dry etching the neighboring regions of the grooves formed in step (b) to form extended grooves, which are etched to a depth up to n-GaN layer, where n remains at the bottom of the grooves formed in step (b) Removing the GaN layer part as well so that the metal layer formed in step (e) is exposed; (i) forming a side electrode lead, which is a part of the n-electrode, on the sidewall of the n-GaN layer by depositing metal on the expansion groove formed in step (h), and making an electrical connection with the exposed metal layer in step (h). Deflation; And (j) a device isolation step of cutting along at least a portion of the groove formed in step (b); a vertical electrode type nitride light emitting device manufacturing method comprising a.

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