KR100871694B1 - Program method and data read method of non-volatile memory device using six threshold voltage levels, and non-volatile memory device using the same - Google Patents

Abstract

A program method and a data read method of a nonvolatile memory device using six threshold voltage levels, and a nonvolatile memory device using the program method and data read method are disclosed. The program method according to the present invention is a method of programming a nonvolatile memory device including a first nonvolatile memory cell and a second nonvolatile memory cell, each of which can be programmed to sequentially increase first to sixth threshold voltage levels. The program method according to the present invention comprises first and second page data program steps, third page data program steps, fourth page data program steps and fifth page data program steps. The first and second page data program steps program the first and second page data to the first threshold voltage level or the second threshold voltage level in the first nonvolatile memory cell and the second nonvolatile memory cell. The third page data program step programs third page data into the first nonvolatile memory cell at a third threshold voltage level or a fourth threshold voltage level according to the first and second page data. In the fourth page data program step, the fourth page data is programmed to the fifth threshold voltage level or the sixth threshold voltage level in the first nonvolatile memory cell or the second nonvolatile memory cell according to the third page data. . In the fifth page data program step, the fifth page data is programmed into the first nonvolatile memory cell or the second nonvolatile memory cell at a third threshold voltage level or a fourth threshold voltage level according to the fourth page data. .

Description

Program method and data read method of a nonvolatile memory device using six threshold voltage levels, and Nonvolatile memory device using the program method and data read method. levels, and non-volatile memory device using the same}

BRIEF DESCRIPTION OF THE DRAWINGS In order to better understand the drawings cited in the detailed description of the invention, a brief description of each drawing is provided.

1 (a) and 1 (b) are diagrams illustrating a nonvolatile memory device according to the present invention.

FIG. 1C is a diagram illustrating a nonvolatile memory cell having six threshold voltage levels according to the present invention.

2 is a flowchart showing a program method according to the first embodiment of the present invention.

3 is a diagram illustrating a program method according to a first embodiment of the present invention.

4 is a diagram for describing a program process when the first and second page data are "11".

5 is a diagram for describing a program process when the first and second page data are "10".

FIG. 6 is a diagram illustrating a program process when the first and second page data are "01".

FIG. 7 is a diagram illustrating a program process when the first and second page data are "00".

8 is a diagram illustrating a program state of nonvolatile memory cells after the program method according to the first embodiment of the present invention is performed.

9 is a view for explaining a data reading method according to the first embodiment of the present invention.

10 is a view for explaining a program method according to a second embodiment of the present invention.

FIG. 11 is a diagram illustrating an example of a first program step of programming the first to third page data of FIG. 10.

FIG. 12 is a diagram illustrating a second program step of programming the fourth and fifth page data of FIG. 10.

FIG. 13 is a diagram illustrating an example of a first program step of programming first to third page data in a program method according to a third embodiment of the present invention.

14 is a diagram illustrating an example of a second program step of programming fourth and fifth page data in the program method according to the third embodiment of the present invention.

The present invention relates to a program method and a data read method of a nonvolatile memory device, and more particularly, to a program method and a data read method of a nonvolatile memory device using six threshold voltage levels.

A general nonvolatile memory device includes a four-level nonvolatile memory cell having four threshold voltage levels or an eight-level nonvolatile memory cell having eight threshold voltage levels in order to store two bits or more of data. Since a four-level nonvolatile memory cell is programmed using four threshold voltage levels, one four-level nonvolatile memory cell can store two bits of data. In addition, since an eight-level nonvolatile memory cell is programmed using eight threshold voltage levels, one eight-level nonvolatile memory cell can store three bits of data.

In some cases, it is necessary to store data other than the exponent bit of two. However, storing data of bits other than an exponential multiple of two using a four-level nonvolatile memory cell causes a problem that the degree of integration of the nonvolatile memory device is lowered. In addition, since eight-level nonvolatile memory cells use a large number of threshold voltage levels, the margin between threshold voltage levels is reduced. Therefore, storing data of bits other than an exponential multiple of 2 using an 8-level nonvolatile memory cell causes a problem of low reliability of the nonvolatile memory device.

Therefore, there is a need for a nonvolatile memory device capable of storing bits of data other than an exponential multiple of two.

An object of the present invention is to provide a program method of a nonvolatile memory device using six threshold voltage levels.

Another object of the present invention is to provide a data reading method of a nonvolatile memory device using six threshold voltage levels.

Another object of the present invention is to provide a nonvolatile memory device having a plurality of nonvolatile memory cells each having six threshold voltage levels.

A program method according to the present invention for achieving the above technical problem is a nonvolatile memory including a first nonvolatile memory cell and a second nonvolatile memory cell that can be programmed to sequentially increasing first to sixth threshold voltage level, respectively. How to program the device. The program method according to the present invention comprises first and second page data program steps, third page data program steps, fourth page data program steps and fifth page data program steps.

The first and second page data program steps program the first and second page data to the first threshold voltage level or the second threshold voltage level in the first nonvolatile memory cell and the second nonvolatile memory cell. The third page data program step programs third page data into the first nonvolatile memory cell at a third threshold voltage level or a fourth threshold voltage level according to the first and second page data. In the fourth page data program step, the fourth page data is programmed into the first nonvolatile memory cell or the second nonvolatile memory cell at the fifth threshold voltage level or the sixth threshold voltage level according to the third page data. . In the fifth page data program step, the fifth page data is programmed into the first nonvolatile memory cell or the second nonvolatile memory cell at a third threshold voltage level or a fourth threshold voltage level according to the fourth page data. .

A program method according to another aspect of the present invention includes a first program step and a second program step. The first program step programs the first and second page data to the first threshold voltage level or the second threshold voltage level in the first nonvolatile memory cell and the second nonvolatile memory cell. The second program step may include the third through fifth page data in the first nonvolatile memory cell or the second nonvolatile memory cell according to the threshold voltage level at which the previous page data is programmed. Program to one of the levels.

According to another aspect of the present invention, there is provided a data reading method including a first and second page data reading step, a third page data reading step, a fourth page data reading step, and a fifth page data reading step. The first and second page data reading steps may include a first read threshold voltage between the first and second threshold voltage levels, a third read threshold voltage between the third and fourth threshold voltage levels, and a fifth read voltage. The first and second page data are read using the fifth read threshold voltage between the threshold voltage level and the sixth threshold voltage level. The third page data read step reads the third page data by using the second read threshold voltage between the second threshold voltage level and the third threshold voltage level. The fourth page data read step reads fourth page data using a fourth read threshold voltage between the fourth threshold voltage level and the fifth threshold voltage level. In the fifth page data reading step, third page data is read using the second read threshold voltage and the fourth read threshold voltage.

In accordance with another aspect of the present invention, a nonvolatile memory device includes a first nonvolatile memory cell and a second nonvolatile memory cell. The first nonvolatile memory cell may be programmed to a first to sixth threshold voltage level that is sequentially increased. The second nonvolatile memory cell may be programmed to the first to sixth threshold voltage levels.

DETAILED DESCRIPTION In order to fully understand the present invention, the operational advantages of the present invention, and the objects achieved by the practice of the present invention, reference should be made to the accompanying drawings which illustrate preferred embodiments of the present invention and the contents described in the drawings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements.

In the following description, it is assumed that the nonvolatile memory cell according to the present invention has six threshold voltage levels. However, the number of threshold voltage levels of the nonvolatile memory cell according to the present invention is not limited thereto. For example, a nonvolatile memory cell according to the present invention may have 12 threshold voltage levels.

1 (a) and 1 (b) are diagrams illustrating a nonvolatile memory device according to the present invention.

FIG. 1C is a diagram illustrating a nonvolatile memory cell having six threshold voltage levels according to the present invention.

Referring to FIG. 1C, first and sixth thresholds of the first and second nonvolatile memory cells CELL1 and CELL2 included in the nonvolatile memory devices 100A and 100B according to the present invention are sequentially increased. It can be programmed to one of the voltage levels. Specifically, the sixth threshold voltage level has the highest voltage level, and the first threshold voltage level has the lowest voltage level. The nonvolatile memory devices 100A and 100B according to the present invention can program five page data (5 bit data) by using two nonvolatile memory cells CELL1 and CELL2 having six threshold voltage levels, respectively. have.

The first and second nonvolatile memory cells CELL1 and CELL2 may be connected to the same word line or may be connected to the same bit line. In FIG. 1A, the first and second nonvolatile memory cells CELL1 and CELL2 are connected to the same word line. In FIG. 1B, the first and second nonvolatile memory cells CELL1 and CELL2 are connected to the same bit line.

2 is a flowchart showing a program method according to the first embodiment of the present invention.

Referring to FIG. 2, the program method 200 according to the present invention includes a first page data program step S210, a third page data program step S230, a fourth page data program step S240 and a first page data program step S240. A five page data program step S250 is provided.

The first and second page data program step S210 may program the first and second page data to the first threshold voltage level or the second threshold voltage level in the first nonvolatile memory cell and the second nonvolatile memory cell. In the third page data program step S230, the third page data is programmed into the first nonvolatile memory cell at the third threshold voltage level or the fourth threshold voltage level according to the first and second page data. In the fourth page data program step S240, the fourth page data is programmed to the fifth threshold voltage level or the sixth threshold voltage level in the first nonvolatile memory cell or the second nonvolatile memory cell according to the third page data. . The fifth page data program step S250 programs the fifth page data to the third threshold voltage level or the fourth threshold voltage level according to the fourth page data in the first nonvolatile memory cell or the second nonvolatile memory cell. .

In the third page data program step S230, according to the threshold voltage level of the first nonvolatile memory cell, the third page data is programmed to the third threshold voltage level or the fourth threshold voltage level in the first nonvolatile memory cell. can do. In the fourth page data program step S240, the fourth page data is stored in the first nonvolatile memory cell or the second nonvolatile memory cell according to the threshold voltage level of the first nonvolatile memory cell. Programmable to the sixth threshold voltage level. According to the fifth page data program step S250, the fifth page data may be transferred to the first nonvolatile memory cell or the second nonvolatile memory cell according to the threshold voltage level of the second nonvolatile memory cell. Can be programmed to the fourth threshold voltage level.

3 is a diagram illustrating a program method according to a first embodiment of the present invention. FIG. 3 shows a program in one nonvolatile memory cell (CELL1 or CELL2 of FIG. 2).

Referring to FIG. 3A, the first and second page data program steps S210 program the first and second page data to a first threshold voltage level and a second threshold voltage level. Here, since one nonvolatile memory cell has two threshold voltage levels, two nonvolatile memory cells have a combination of four threshold voltage levels. Accordingly, when the first nonvolatile memory cell and the second nonvolatile memory cell are used together for programming, the first and second page data can be written in the two nonvolatile memory cells.

Referring to FIG. 3B, in the third page data program step S230, the third page data is stored in the first nonvolatile memory cell, and the first threshold voltage level, the third threshold voltage level, or the second threshold voltage level. And the fourth threshold voltage level. For example, when the logic level of the third page data is 0, the third threshold voltage level or the fourth threshold voltage level may be programmed. In addition, when the logic level of the third page data is 1, it may be programmed to the first threshold voltage level or the second threshold voltage level.

In more detail, when the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level, the third page data program step S230 may include the third page data in the first nonvolatile memory cell. The threshold voltage level and the third threshold voltage level can be programmed. In addition, when the threshold voltage level programmed in the first nonvolatile memory cell is the second threshold voltage level, the third page data may be programmed to the second threshold voltage level and the fourth threshold voltage level in the first nonvolatile memory cell. have. When the third page data is “0”, the third nonvolatile memory cell may be programmed to a third threshold voltage level or a fourth threshold voltage level. In addition, when the third page data is "1", the first nonvolatile memory cell may be programmed to the first threshold voltage level or the second threshold voltage level. For example, when the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level and the third page data is "0", the third nonvolatile memory cell is programmed to the third threshold voltage level.

Referring to FIG. 3C, in the fourth page data program step S240, the fourth page data is stored in the first nonvolatile memory cell, and the third threshold voltage level and the fifth threshold voltage level or the fourth threshold voltage level. And the sixth threshold voltage level. Alternatively, the fourth page data may be programmed into the second nonvolatile memory cell at the first threshold voltage level and the fifth threshold voltage level, or the second threshold voltage level and the sixth threshold voltage level. For example, when the logic level of the fourth page data is zero, the fourth page data may be programmed to the fifth threshold voltage level or the sixth threshold voltage level.

More specifically, in the fourth page data program step S240, when the threshold voltage level programmed in the first nonvolatile memory cell is the third threshold voltage level, the fourth page data program step (S240) may include the fourth page data in the first nonvolatile memory cell. When the third threshold voltage level and the fifth threshold voltage level are programmed, and the threshold voltage level programmed in the first nonvolatile memory cell is the fourth threshold voltage level, fourth page data is transferred to the first nonvolatile memory cell. The threshold voltage level and the sixth threshold voltage level can be programmed. Further, when the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level, the fourth page data is programmed into the first threshold voltage level and the fifth threshold voltage level in the second nonvolatile memory cell. When the threshold voltage level programmed in the first nonvolatile memory cell is the second threshold voltage level, the fourth page data may be programmed into the second threshold voltage level and the sixth threshold voltage level in the second nonvolatile memory cell.

In the fourth page data program step S240, when the threshold voltage level programmed in the first nonvolatile memory cell is the third threshold voltage level or the fourth threshold voltage level, and the fourth page data is “0”, the first page data program step S240 is performed. The nonvolatile memory cell may be programmed to a fifth threshold voltage level or a sixth threshold voltage level. In addition, when the threshold voltage level programmed in the first nonvolatile memory cell is the third threshold voltage level or the fourth threshold voltage level, and the fourth page data is "1", a third threshold is applied to the first nonvolatile memory cell. It can be programmed to the voltage level or the fourth threshold voltage level. In addition, when the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level or the second threshold voltage level, and the fourth page data is "0", the fifth threshold voltage is applied to the first nonvolatile memory cell. Level or the sixth threshold voltage level. In addition, when the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level or the second threshold voltage level, and the fourth page data is "1", the first threshold voltage is applied to the first nonvolatile memory cell. It can be programmed to the level or the second threshold voltage level.

2 and 3B, the fifth page data program step S250 may include the fifth page data in the first nonvolatile memory cell, the first threshold voltage level, the third threshold voltage level, or the second. The threshold voltage level and the fourth threshold voltage level can be programmed. Alternatively, fifth page data may be programmed into the second nonvolatile memory cell at a first threshold voltage level and a third threshold voltage level or at a second threshold voltage level and a fourth threshold voltage level. For example, when the logic level of the fifth page data is 0, the third threshold voltage level or the fourth threshold voltage level may be programmed.

When the threshold voltage level programmed in the second nonvolatile memory cell is the fifth threshold voltage level, the fifth page data program step S250 may include the fifth page data in the first nonvolatile memory cell and the first threshold voltage level. When the third threshold voltage level is programmed and the threshold voltage level programmed in the second nonvolatile memory cell is the sixth threshold voltage level, the fifth threshold data and the fourth threshold data are stored in the first nonvolatile memory cell. Programmable to threshold voltage level. Further, when the threshold voltage level programmed in the second nonvolatile memory cell is the first threshold voltage level, the fifth page data is programmed into the first threshold voltage level and the third threshold voltage level in the second nonvolatile memory cell. When the threshold voltage level programmed in the second nonvolatile memory cell is the second threshold voltage level, the fifth page data may be programmed to the second threshold voltage level and the fourth threshold voltage level in the second nonvolatile memory cell.

In the fifth page data program step S250, when the fifth page data is “0”, the fifth page data program step S250 may be programmed to the third threshold voltage level or the fourth threshold voltage level in the first nonvolatile memory cell or the second nonvolatile memory cell. Can be. In addition, when the fifth page data is “1”, the first page voltage may be programmed to the first threshold voltage level or the second threshold voltage level in the first nonvolatile memory cell or the second nonvolatile memory cell.

4 is a diagram for describing a program process when the first and second page data are "11".

Referring to FIG. 4, in a first and second page data program step S210, first and second page data having a value of “11” are stored in a first threshold on a first nonvolatile memory cell and a second nonvolatile memory cell. Program to voltage level. The third page data program step S230 may program the first nonvolatile memory cell to the third threshold voltage level if the third page data is "0", and if the third page data is "1", the first nonvolatile memory. Program the cell to the first threshold voltage level. In the fourth page data program step S240, when the third page data is "1" and the fourth page data is "0", the second nonvolatile memory cell is programmed to the fifth threshold voltage level. In addition, when the third page data is "0" and the fourth page data is "0", the first nonvolatile memory cell is programmed to the fifth threshold voltage level.

In a fifth page data program step S250, when the third page data is "1", the fourth page data is "1", and the fifth page data is "0", the fifth nonvolatile memory cell may be charged with a third threshold voltage. Program to the level. In addition, when the third page data is "1", the fourth page data is "0", and the fifth page data is "0", the first nonvolatile memory cell is programmed to the third threshold voltage level. In addition, when the third page data is "0", the fourth page data is "1", and the fifth page data is "0", the second nonvolatile memory cell is programmed to the third threshold voltage level. In addition, when the third page data is "0", the fourth page data is "0", and the fifth page data is "0", the first nonvolatile memory cell is programmed to the third threshold voltage level.

5 is a diagram for describing a program process when the first and second page data are "10".

FIG. 6 is a diagram illustrating a program process when the first and second page data are "01".

FIG. 7 is a diagram illustrating a program process when the first and second page data are "00".

Since the program process of FIGS. 5 to 7 corresponds to the program process of FIG. 4, a detailed description thereof will be omitted.

8 is a diagram illustrating a program state of nonvolatile memory cells after the program method according to the first embodiment of the present invention is performed.

In FIG. 8, five bits of data ("00000" through "11111") are programmed in two nonvolatile memory cells each having six threshold voltage levels.

9 is a view for explaining a data reading method according to the first embodiment of the present invention.

9, a data reading method according to the present invention includes a first and second page data reading step, a third page data reading step, a fourth page data reading step and a fifth page data reading step.

The first and second page data reading steps may include a first read threshold voltage between the first and second threshold voltage levels, a third read threshold voltage between the third and fourth threshold voltage levels, and a fifth read voltage. The first and second page data are read using the fifth read threshold voltage between the threshold voltage level and the sixth threshold voltage level. The third page data read step reads the third page data by using the second read threshold voltage between the second threshold voltage level and the third threshold voltage level. The fourth page data read step reads fourth page data using a fourth read threshold voltage between the fourth threshold voltage level and the fifth threshold voltage level. In the fifth page data reading step, the third page data is read using the second read threshold voltage and the fourth read threshold voltage.

10 is a view for explaining a program method according to a second embodiment of the present invention.

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A program method according to a second embodiment of the present invention includes a first program step in which first to third page data is written and a second program step in which fourth and fifth page data are written. Referring to FIG. 10, a first program step includes programming first to third page data into a first nonvolatile memory cell and a second nonvolatile memory cell. The first program step may include a first intermediate threshold voltage level (T1 of FIG. 10) or a first intermediate voltage higher than at least one of the first threshold voltage level (1 of FIG. 10) or the first to sixth threshold voltage levels. Program one of the second intermediate threshold voltage levels higher than the threshold voltage level (T2 in FIG. 10). The second program step may include first and sixth threshold voltage levels of the fourth and fifth page data in the first nonvolatile memory cell or the second nonvolatile memory cell according to the threshold voltage level at which the previous page data is programmed. Program one of 10 to 1).

In storing the first to fifth page data in the first nonvolatile memory cell or the second nonvolatile memory cell, the program method according to the second embodiment of the present invention may store the first to third page data in intermediate levels. (E.g., the first intermediate threshold voltage level and the second intermediate threshold voltage level). Next, the fourth to fifth page data are programmed to final levels (first to sixth threshold voltage levels).

Accordingly, the program method according to the second embodiment of the present invention can reduce the change in the threshold voltage level during programming. Accordingly, there is an advantage that the coupling noise can also be reduced.

The second intermediate threshold voltage level may be lower than at least one of the first to sixth threshold voltage levels. The first intermediate threshold voltage level may be lower than the second intermediate threshold voltage level.

The first intermediate threshold voltage level may be higher than the second threshold voltage level and lower than the third threshold voltage level. The second intermediate threshold voltage level may be higher than the fourth threshold voltage level and lower than the fifth threshold voltage level.

The width of the first and second intermediate threshold voltage levels may be wider than at least one of the second to sixth threshold voltage levels. Furthermore, the width of the first and second intermediate threshold voltage levels may be wider than the width of the second to sixth threshold voltage levels.

FIG. 11 is a diagram illustrating an example of a first program step of programming the first to third page data of FIG. 10. Hereinafter, the first program step will be described in detail with reference to FIGS. 10 and 11.

The first program step may include a first page data program step, a second page data program step, and a third page data program step.

The first page data program step programs the first page data into the first nonvolatile memory cell at a first threshold voltage level or a first intermediate threshold voltage level. For example, when the first page data is "0", the program is programmed from the first threshold voltage level (1 in FIG. 10) to the second threshold voltage level (2 in FIG. 10), and the first page data is "1". In this case, it may be maintained at the first threshold voltage level (1 in FIG. 10).

In the second page data program step, the second page data is programmed into the first nonvolatile memory cell at the first intermediate threshold voltage level or the second intermediate threshold voltage level according to the threshold voltage level programmed in the first nonvolatile memory cell. Alternatively, the second nonvolatile memory cell may be programmed to a first threshold voltage level or a second intermediate threshold voltage level.

In more detail, when the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level, the second page data may be transferred to the second nonvolatile memory cell in the first threshold voltage level or the second intermediate threshold voltage level. Can be programmed. For example, when the second page data is "0", the second nonvolatile memory cell is programmed from the first threshold voltage level (1 in FIG. 10) to the second intermediate threshold voltage level (T2 in FIG. 10). When the two-page data is "1", the second nonvolatile memory cell may be maintained at the first threshold voltage level.

In addition, when the threshold voltage level programmed in the first nonvolatile memory cell is the second intermediate threshold voltage level, the second page data is converted into the first intermediate threshold voltage level or the second intermediate threshold voltage level in the first nonvolatile memory cell. You can program it. For example, when the second page data is “0”, the first nonvolatile memory cell is programmed from the first threshold voltage level (1 in FIG. 10) to the second intermediate threshold voltage level (T2 in FIG. 10). When the two-page data is "1", the first nonvolatile memory cell may be maintained at the first intermediate threshold voltage level.

In the third page data program step, the third page data is programmed to the first threshold voltage level or the first intermediate threshold voltage level in the first nonvolatile memory cell according to the threshold voltage level programmed in the second nonvolatile memory cell. Alternatively, the second nonvolatile memory cell may be programmed to a first threshold voltage level or a first intermediate threshold voltage level.

In more detail, when the threshold voltage level programmed in the second nonvolatile memory cell in the second page data program step is the first threshold voltage level, the third page data program step may include the third page data in the second nonvolatile state. The memory cell may be programmed to a first threshold voltage level and a first intermediate threshold voltage level. For example, when the third page data is “0”, the second nonvolatile memory cell is programmed from the first threshold voltage level (1 in FIG. 10) to the first intermediate threshold voltage level (T1 in FIG. 10). When the three page data is "1", the second nonvolatile memory cell may be maintained at the first threshold voltage level.

In addition, when the threshold voltage level programmed in the second nonvolatile memory cell in the second page data program step is the second intermediate threshold voltage level, the third page data is stored in the first nonvolatile memory cell. Programmable to 1 mid threshold voltage level. For example, when the third page data is “0”, the first nonvolatile memory cell is programmed from the first threshold voltage level (1 in FIG. 10) to the first intermediate threshold voltage level (T1 in FIG. 10). When the three page data is "1", the first nonvolatile memory cell may be maintained at the first threshold voltage level.

FIG. 12 is a diagram illustrating a second program step of programming the fourth and fifth page data of FIG. 10. Hereinafter, the second program step will be described in detail with reference to FIGS. 10 and 12.
Referring to the 4th Page PGM of FIG. 12, the second program step changes the threshold voltage of the first nonvolatile memory cell and does not change the threshold voltage of the second nonvolatile memory cell in order to write the fourth page data. For example, the threshold voltage of the first nonvolatile memory cell may be defined as a first threshold voltage level (1 in FIG. 10), a first intermediate threshold voltage level (T1 in FIG. 10), or a second intermediate threshold voltage level (T2 in FIG. 10. ) Is shifted to the first to sixth threshold voltage levels.

In the second program step, when the first nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, the fourth page data is stored in the first nonvolatile memory cell in the first threshold voltage level or the second threshold voltage. Can be programmed as a level. For example, when the fourth page data is "0", the first nonvolatile memory cell may be programmed to the second threshold voltage level. In addition, when the fourth page data is "1", the first nonvolatile memory cell may be maintained at the first threshold voltage level.

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In the second program step, when the first nonvolatile memory cell is programmed to the first intermediate threshold voltage level in the first program step, the fourth page data is transferred to the first nonvolatile memory cell by the third threshold voltage level or the fourth threshold. Can be programmed to voltage level. For example, when the fourth page data is "0", the first nonvolatile memory cell may be programmed to the fourth threshold voltage level. In addition, when the fourth page data is "1", the first nonvolatile memory cell may be programmed to a third threshold voltage level.
Referring to 5th Page PGM of FIG. 12, the second program step changes the threshold voltage of the second nonvolatile memory cell without changing the threshold voltage of the first nonvolatile memory cell to write the fifth page data. For example, the threshold voltage of the second nonvolatile memory cell may be defined as a first threshold voltage level (1 in FIG. 10), a first intermediate threshold voltage level (T1 in FIG. 10), or a second intermediate threshold voltage level (T2 in FIG. 10. ) Is shifted to the first to sixth threshold voltage levels.

In the second program step, when the first nonvolatile memory cell is programmed to the second intermediate threshold voltage level in the first program step, fourth page data is stored in the first nonvolatile memory cell by the fifth threshold voltage level or the sixth threshold. Can be programmed to voltage level. For example, when the fourth page data is "0", the first nonvolatile memory cell may be programmed to the sixth threshold voltage level. In addition, when the fourth page data is "1", the first nonvolatile memory cell may be maintained at the fifth threshold voltage level.

In the second program step, when the second nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, the fifth page data is stored in the second nonvolatile memory cell in the first threshold voltage level or the second threshold voltage. Can be programmed as a level. For example, when the fifth page data is "0", the second nonvolatile memory cell may be programmed to the second threshold voltage level. In addition, when the fifth page data is "1", the second nonvolatile memory cell may be programmed to the first threshold voltage level.

In the second program step, when the second nonvolatile memory cell is programmed to the first intermediate threshold voltage level in the first program step, the fifth page data is transferred to the second nonvolatile memory cell by the third threshold voltage level or the fourth threshold. Can be programmed to voltage level. For example, when the fifth page data is "0", the second nonvolatile memory cell may be programmed to the fourth threshold voltage level. In addition, when the fifth page data is "1", the second nonvolatile memory cell may be programmed to the third threshold voltage level.

In the second program step, when the second nonvolatile memory cell is programmed to the second intermediate threshold voltage level in the first program step, the fifth page voltage or the fifth threshold data is stored in the first nonvolatile memory cell. Can be programmed to voltage level. For example, when the fifth page data is "0", the second nonvolatile memory cell may be programmed to the sixth threshold voltage level. In addition, when the fifth page data is "1", the second nonvolatile memory cell may be programmed to the fifth threshold voltage level.

A program method according to a third embodiment of the present invention includes a first program step of programming first to third page data and a second program step of programming fourth and fifth page data.

FIG. 13 is a diagram illustrating an example of a first program step of programming first to third page data in a program method according to a third embodiment of the present invention.

In the first program step, the first to third page data is programmed into one of the first and third threshold voltage levels in the first and second nonvolatile memory cells. The second program step may include changing the fourth and fifth page data to one of the fourth to sixth threshold voltage levels in the first nonvolatile memory cell or the second nonvolatile memory cell according to the threshold voltage level at which the previous page data is programmed. Program.

Referring to FIG. 13, a first program step includes a first page data program step, a second page data program step, and a third page data program step.

In the first page data program step, the first page data is programmed into the first nonvolatile memory cell at the first threshold voltage level or the first intermediate threshold voltage level. The second page data program step may include programming second page data into a second threshold voltage level or a third threshold voltage level in the first nonvolatile memory cell according to a threshold voltage level programmed in the first nonvolatile memory cell. The second nonvolatile memory cell is programmed to a first threshold voltage level or a third threshold voltage level. The third page data program step may include programming the third page data to the first threshold voltage level or the second threshold voltage level in accordance with the threshold voltage level programmed in the second nonvolatile memory cell. The nonvolatile memory cell is programmed to the first threshold voltage level or the second threshold voltage level.

In the second page data program step, when the threshold voltage level programmed in the first nonvolatile memory cell in the first page data program step is the first threshold voltage level, the second page data program may include the first page data in the second nonvolatile memory cell. Program the threshold voltage level and the third threshold voltage level. In addition, when the threshold voltage level programmed in the first nonvolatile memory cell is the second threshold voltage level in the first page data program step, the second threshold voltage level and the third threshold data are stored in the first nonvolatile memory cell. Program to threshold voltage level.

In the third page data program step, when the threshold voltage level programmed in the second nonvolatile memory cell in the second page data program step is the first threshold voltage level, the third page data program may include the third page data in the second nonvolatile memory cell. Program to one threshold voltage level and a second threshold voltage level. Further, when the threshold voltage level programmed in the second nonvolatile memory cell is the third threshold voltage level in the second page data program step, the third threshold data and the first threshold voltage level and the second page data are stored in the first nonvolatile memory cell. Program to threshold voltage level.

14 is a diagram illustrating an example of a second program step of programming fourth and fifth page data in the program method according to the third embodiment of the present invention.

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Referring to FIG. 14, in the second program step, when the first nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, the fourth threshold data is stored in the first nonvolatile memory cell. Program to the level or fourth threshold voltage level. In addition, when the first nonvolatile memory cell is programmed to the second threshold voltage level in the first program step, the fourth page data is programmed to the second threshold voltage level or the fifth threshold voltage level in the first nonvolatile memory cell. . In addition, when the first nonvolatile memory cell is programmed to the third threshold voltage level in the first program step, the fourth page data is programmed to the third threshold voltage level or the sixth threshold voltage level in the first nonvolatile memory cell. .

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In the second program step, when the second nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, the fifth page data is stored in the second nonvolatile memory cell in the first threshold voltage level or the fourth threshold voltage. Program to the level. In addition, when the second nonvolatile memory cell is programmed to the second threshold voltage level in the first program step, the fifth page data is programmed to the second threshold voltage level or the fifth threshold voltage level in the second nonvolatile memory cell. . In addition, when the second nonvolatile memory cell is programmed to the third threshold voltage level in the first program step, the fifth page data is programmed to the third threshold voltage level or the sixth threshold voltage level in the first nonvolatile memory cell. .

A semiconductor memory device according to another aspect of the present invention includes at least one pair of nonvolatile memory cells including a first nonvolatile memory cell and a second nonvolatile memory cell. The first nonvolatile memory cell and the second nonvolatile memory cell may be programmed to a plurality of threshold voltage levels that are sequentially increased. The logic state of data of the nonvolatile memory cell pair is determined according to a combination of a threshold voltage level programmed in the first nonvolatile memory cell and a threshold voltage level programmed in the second nonvolatile memory cell.

The first nonvolatile memory cell and the second nonvolatile memory cell may be programmed to first to sixth threshold voltage levels which are sequentially increased. In this case, each pair of nonvolatile memory cells can store 5 bits of data.

The first nonvolatile memory cell and the second nonvolatile memory cell may be programmed to the first to third threshold voltage levels which are sequentially increased. The first nonvolatile memory cell and the second nonvolatile memory cell may be programmed to the first to twelfth threshold voltage levels which are sequentially increased.

As described above, optimal embodiments have been disclosed in the drawings and the specification. Although specific terms have been used herein, they are used only for the purpose of describing the present invention and are not intended to limit the scope of the present invention as defined in the claims or the claims. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

As described above, the program method and the data read method of the nonvolatile memory device according to the present invention, and the nonvolatile memory device according to the present invention, by using the six threshold voltage levels or by reading the data, the 5-bit data Can be saved or read. As a result, it is possible to have a higher density than when using four threshold voltage levels, and there is an advantage of increasing reliability compared to the case of using eight threshold voltage levels.

Claims (38)

A method of programming a nonvolatile memory device including a first nonvolatile memory cell and a second nonvolatile memory cell, each of which may be programmed to sequentially increase first to sixth threshold voltage levels, A first program step of programming first and second page data to a first threshold voltage level or a second threshold voltage level in the first nonvolatile memory cell and the second nonvolatile memory cell; And According to the threshold voltage level at which the previous page data is programmed, the third to fifth page data is programmed in the first nonvolatile memory cell or the second nonvolatile memory cell as one of the third threshold voltage level and the sixth threshold voltage level, Or a second program step for maintaining a threshold voltage level programmed in said first program step. A method of programming a nonvolatile memory device including a first nonvolatile memory cell and a second nonvolatile memory cell, each of which may be programmed to sequentially increase first to sixth threshold voltage levels, First and second page data program steps of programming first and second page data to the first nonvolatile memory cell and the second nonvolatile memory cell at a first threshold voltage level or a second threshold voltage level; According to the first and second page data, program the third page data to the third threshold voltage level or the fourth threshold voltage level in the first nonvolatile memory cell or in the first and second page data program step. A third page data program step of maintaining a programmed threshold voltage level; According to the third page data, the fourth page data is programmed to the fifth threshold voltage level or the sixth threshold voltage level in the first nonvolatile memory cell or the second nonvolatile memory cell, or the first to third times. A fourth page data program step for maintaining a threshold voltage level programmed in the page data program step; And According to the fourth page data, the fifth page data is programmed in the first nonvolatile memory cell or the second nonvolatile memory cell to a third threshold voltage level or a fourth threshold voltage level, or the first to fourth times. And a fifth page data program step for maintaining a threshold voltage level programmed in the page data program step. The method of claim 2, The third page data program step may include programming third page data into a third threshold voltage level or a fourth threshold voltage level in the first nonvolatile memory cell according to a threshold voltage level programmed in the first nonvolatile memory cell. and, In the fourth page data program step, the fourth page data is stored in the first nonvolatile memory cell or the second nonvolatile memory cell according to the threshold voltage level programmed in the first nonvolatile memory cell. Or program at the sixth threshold voltage level, The fifth page data program step may include the fifth page data in the first nonvolatile memory cell or the second nonvolatile memory cell in accordance with a threshold voltage level programmed in the second nonvolatile memory cell. Or programming to a fourth threshold voltage level. The method of claim 2, In a third page data program step, the third page data is programmed into the first nonvolatile memory cell at a first threshold voltage level and a third threshold voltage level or at a second threshold voltage level and a fourth threshold voltage level. The fourth page data program step may include programming the fourth page data into the first nonvolatile memory cell at a third threshold voltage level and a fifth threshold voltage level, or at a fourth threshold voltage level and a sixth threshold voltage level. Or program the fourth page data into the second nonvolatile memory cell at a first threshold voltage level and a fifth threshold voltage level, or at a second threshold voltage level and a sixth threshold voltage level, The fifth page data program step may include programming the fifth page data to the first nonvolatile memory cell at a first threshold voltage level and a third threshold voltage level or at a second threshold voltage level and a fourth threshold voltage level. Or programming the fifth page data into the second nonvolatile memory cell at a first threshold voltage level and a third threshold voltage level, or at a second threshold voltage level and a fourth threshold voltage level. The method of claim 3, wherein the third page data program step comprises: When the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level, the third page data is programmed into the first threshold voltage level and the third threshold voltage level in the first nonvolatile memory cell. , When the threshold voltage level programmed in the first nonvolatile memory cell is a second threshold voltage level, programming third page data into the first nonvolatile memory cell at a second threshold voltage level and a fourth threshold voltage level. Program method characterized by the above. Claim 6 was abandoned when the registration fee was paid. The method of claim 5, wherein the third page data program step, When the third page data is "0", the third nonvolatile memory cell is programmed to a third threshold voltage level or a fourth threshold voltage level. And when the third page data is '1', programming the first nonvolatile memory cell to a first threshold voltage level or a second threshold voltage level. Claim 7 was abandoned upon payment of a set-up fee. The method of claim 3, wherein the fourth page data program step comprises: If the threshold voltage level programmed in the first nonvolatile memory cell is a third threshold voltage level, program fourth page data to the third threshold voltage level and the fifth threshold voltage level in the first nonvolatile memory cell. When the threshold voltage level programmed in the first nonvolatile memory cell is the fourth threshold voltage level, the fourth page data is programmed into the fourth threshold voltage level and the sixth threshold voltage level in the first nonvolatile memory cell. When the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level, the fourth page data is programmed into the first threshold voltage level and the fifth threshold voltage level in the second nonvolatile memory cell. If the threshold voltage level programmed in the first nonvolatile memory cell is the second threshold voltage level, programming the fourth page data to the second threshold voltage level and the sixth threshold voltage level in the second nonvolatile memory cell. Program method characterized by the above. Claim 8 was abandoned when the registration fee was paid. The method of claim 7, wherein the fourth page data program step, When the threshold voltage level programmed in the first nonvolatile memory cell is a third threshold voltage level or a fourth threshold voltage level, and the fourth page data is "0", a fifth threshold is applied to the first nonvolatile memory cell. Programmed to the voltage level or the sixth threshold voltage level, When the threshold voltage level programmed in the first nonvolatile memory cell is a third threshold voltage level or a fourth threshold voltage level, and the fourth page data is "1", a third threshold is applied to the first nonvolatile memory cell. Program to the voltage level or the fourth threshold voltage level, When the threshold voltage level programmed in the first nonvolatile memory cell is a first threshold voltage level or a second threshold voltage level, and the fourth page data is "0", a fifth threshold is applied to the first nonvolatile memory cell. Programmed to the voltage level or the sixth threshold voltage level, When the threshold voltage level programmed in the first nonvolatile memory cell is a first threshold voltage level or a second threshold voltage level, and the fourth page data is "1", a first threshold is applied to the first nonvolatile memory cell. A programming method characterized by programming to a voltage level or a second threshold voltage level. Claim 9 was abandoned upon payment of a set-up fee. The method of claim 3, wherein the fifth page data program step comprises: When the threshold voltage level programmed in the second nonvolatile memory cell is the fifth threshold voltage level, the fifth page data is programmed into the first threshold voltage level and the third threshold voltage level in the first nonvolatile memory cell. When the threshold voltage level programmed in the second nonvolatile memory cell is the sixth threshold voltage level, the fifth page data is programmed into the first nonvolatile memory cell at the second threshold voltage level and the fourth threshold voltage level. When the threshold voltage level programmed in the second nonvolatile memory cell is the first threshold voltage level, the fifth page data is programmed into the first threshold voltage level and the third threshold voltage level in the second nonvolatile memory cell. When the threshold voltage level programmed in the second nonvolatile memory cell is the second threshold voltage level, programming the fifth page data into the second threshold voltage level and the fourth threshold voltage level in the second nonvolatile memory cell. Program method characterized by the above. Claim 10 was abandoned upon payment of a setup registration fee. The method of claim 9, wherein the fifth page data program step comprises: When the fifth page data is "0", program the third threshold voltage level or the fourth threshold voltage level in the first nonvolatile memory cell or the second nonvolatile memory cell, And when the fifth page data is "1", programming to the first nonvolatile memory cell or the second nonvolatile memory cell at a first threshold voltage level or a second threshold voltage level. A data reading method of a nonvolatile memory device including a first nonvolatile memory cell and a second nonvolatile memory cell respectively programmed to sequentially increasing first to sixth threshold voltage levels, A first read threshold voltage between the first threshold voltage level and the second threshold voltage level, a third read threshold voltage between the third threshold voltage level and the fourth threshold voltage level, and between a fifth threshold voltage level and a sixth threshold voltage level. Reading first and second page data using the fifth read threshold voltage of the first and second page data; A third page data reading step of reading third page data using a second reading threshold voltage between the second threshold voltage level and the third threshold voltage level; A fourth page data reading step of reading fourth page data using a fourth reading threshold voltage between the fourth threshold voltage level and the fifth threshold voltage level; And And a fifth page data reading step of reading fifth page data by using the second read threshold voltage and the fourth read threshold voltage. A first nonvolatile memory cell that can be programmed to sequentially increase first to sixth threshold voltage levels; And A second nonvolatile memory cell that can be programmed to the first to sixth threshold voltage levels, In a program mode of storing first to fifth page data in the first and second nonvolatile memory cells, Program the first and second page data to a first threshold voltage level or a second threshold voltage level in the first nonvolatile memory cell and the second nonvolatile memory cell; Program the third page data to a third threshold voltage level or a fourth threshold voltage level in the first nonvolatile memory cell according to the first and second page data; Program the fourth page data to the fifth threshold voltage level or the sixth threshold voltage level in the first nonvolatile memory cell or the second nonvolatile memory cell according to the third page data; And according to the fourth page data, the fifth page data is programmed to the third threshold voltage level or the fourth threshold voltage level in the first nonvolatile memory cell or the second nonvolatile memory cell. Memory device. Claim 13 was abandoned upon payment of a registration fee. The method of claim 12, wherein the first nonvolatile memory cell and the second nonvolatile memory cell, Nonvolatile memory device, characterized in that connected to the same word line. Claim 14 was abandoned when the registration fee was paid. The method of claim 12, wherein the first nonvolatile memory cell and the second nonvolatile memory cell, Nonvolatile memory device, characterized in that connected to the same bit line. Claim 15 was abandoned upon payment of a registration fee. In a read mode in which the first to fifth page data are read from the first and second nonvolatile memory cells, A first read threshold voltage between the first threshold voltage level and the second threshold voltage level, a third read threshold voltage between the third threshold voltage level and the fourth threshold voltage level, and the fifth threshold voltage level and the Read the first and second page data using a fifth read threshold voltage between a sixth threshold voltage level, Read the third page data using a second read threshold voltage between the second threshold voltage level and the third threshold voltage level, Read the fourth page data using a fourth read threshold voltage between the fourth threshold voltage level and the fifth threshold voltage level, The fifth page data is read using the second read threshold voltage and the fourth read threshold voltage. At least one pair of nonvolatile memory cells including a first nonvolatile memory cell and a second nonvolatile memory cell, each of which can be programmed to a plurality of sequentially rising threshold voltage levels, A logic state of data of the pair of nonvolatile memory cells is determined according to a combination of a threshold voltage level programmed in the first nonvolatile memory cell and a threshold voltage level programmed in the second nonvolatile memory cell. Memory device. Claim 17 was abandoned upon payment of a registration fee. The method of claim 16, wherein the first nonvolatile memory cell and the second nonvolatile memory cell, The semiconductor memory device of claim 1, wherein the semiconductor memory device is programmed to sequentially increase first to sixth threshold voltage levels. Claim 18 was abandoned upon payment of a set-up fee. 18. The method of claim 17, wherein each pair of nonvolatile memory cells, A semiconductor memory device characterized by storing 5-bit data. Claim 19 was abandoned upon payment of a registration fee. The method of claim 16, wherein the first nonvolatile memory cell and the second nonvolatile memory cell, A semiconductor memory device, characterized by being programmed to the first to third threshold voltage levels sequentially increasing. Claim 20 was abandoned upon payment of a registration fee. The method of claim 16, wherein the first nonvolatile memory cell and the second nonvolatile memory cell, The semiconductor memory device of claim 1, wherein the semiconductor memory device is programmed to sequentially increase first to twelfth threshold voltage levels. A method of programming a nonvolatile memory device including a first nonvolatile memory cell and a second nonvolatile memory cell, each of which may be programmed to sequentially increase first to sixth threshold voltage levels, A first intermediate threshold higher than at least one of the first through third page data and a first threshold voltage level or the first through sixth threshold voltage levels in the first and second nonvolatile memory cells; A first program step of programming to one of a voltage level or a second intermediate threshold voltage level higher than the first intermediate threshold voltage level; And Programming fourth and fifth page data to one of the first to sixth threshold voltage levels in the first nonvolatile memory cell or the second nonvolatile memory cell according to a threshold voltage level at which previous page data is programmed. And a programming step. Claim 22 was abandoned upon payment of a registration fee. The method of claim 21, The second intermediate threshold voltage level is lower than at least one of the first to sixth threshold voltage levels, And the first intermediate threshold voltage level is lower than the second intermediate threshold voltage level. Claim 23 was abandoned upon payment of a set-up fee. The method of claim 21, The first intermediate threshold voltage level is higher than the second threshold voltage level and lower than the third threshold voltage level. And a second intermediate threshold voltage level is higher than the fourth threshold voltage level and lower than the fifth threshold voltage level. Claim 24 was abandoned when the setup registration fee was paid. When the first nonvolatile memory cell or the second nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, a fourth portion of the first nonvolatile memory cell or the second nonvolatile memory cell is stored in the fourth nonvolatile memory cell. Program page data or fifth page data to a first threshold voltage level or a second threshold voltage level, When the first nonvolatile memory cell or the second nonvolatile memory cell is programmed to the first intermediate threshold voltage level in the first program step, the first nonvolatile memory cell or the second nonvolatile memory cell is programmed to the first nonvolatile memory cell or the second nonvolatile memory cell. Program the fourth page data or the fifth page data to a third threshold voltage level or a fourth threshold voltage level, When the first nonvolatile memory cell or the second nonvolatile memory cell is programmed to a second intermediate threshold voltage level in the first program step, the first nonvolatile memory cell or the second nonvolatile memory cell is programmed to the first nonvolatile memory cell or the second nonvolatile memory cell. And programming the fourth page data or the fifth page data to the fifth threshold voltage level or the sixth threshold voltage level. Claim 25 was abandoned upon payment of a registration fee. The method of claim 24, wherein the second program step, When the first nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, the fourth page data is programmed to the first threshold voltage level or the second threshold voltage level in the first nonvolatile memory cell. and, When the first nonvolatile memory cell is programmed to a first intermediate threshold voltage level in the first program step, the fourth page data is transferred to a third threshold voltage level or a fourth threshold voltage level in the first nonvolatile memory cell. Program, When the first nonvolatile memory cell is programmed to a second intermediate threshold voltage level in the first program step, the fourth page data is transferred to the fifth threshold voltage level or the sixth threshold voltage level in the first nonvolatile memory cell. Programming method characterized in that the programming. Claim 26 was abandoned upon payment of a registration fee. The method of claim 25, wherein the second program step, When the second nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, the fifth page data is programmed to the first threshold voltage level or the second threshold voltage level in the second nonvolatile memory cell. and, When the second nonvolatile memory cell is programmed to the first intermediate threshold voltage level in the first program step, the fifth page data is stored in the second nonvolatile memory cell to the third threshold voltage level or the fourth threshold voltage level. Program, When the second nonvolatile memory cell is programmed to the second intermediate threshold voltage level in the first program step, the fifth page data is transferred to the fifth threshold voltage level or the sixth threshold voltage level in the first nonvolatile memory cell. Programming method characterized in that the programming. Claim 27 was abandoned upon payment of a registration fee. The method of claim 21, wherein the first program step, Program second page data to the first intermediate threshold voltage level or the second intermediate threshold voltage level in the first nonvolatile memory cell according to a threshold voltage level programmed in the first nonvolatile memory cell. A second page data program step of programming a nonvolatile memory cell to said first threshold voltage level or said second intermediate threshold voltage level; And Program third page data to the first threshold voltage level or the first intermediate threshold voltage level in the first nonvolatile memory cell according to the threshold voltage level programmed in the second nonvolatile memory cell, or the second page data. And a third page data program step of programming a nonvolatile memory cell to said first threshold voltage level or said first intermediate threshold voltage level. Claim 28 was abandoned upon payment of a registration fee. 28. The method of claim 27, wherein said second page data program step comprises: When the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level in the first page data program step, the second page data is transferred to the second nonvolatile memory cell by the first threshold voltage. Program a level and the second intermediate threshold voltage level, When the threshold voltage level programmed in the first nonvolatile memory cell is the first intermediate threshold voltage level in the first page data program step, the second page data is transmitted to the first nonvolatile memory cell. And programing at a threshold voltage level and the second intermediate threshold voltage level. Claim 29 was abandoned upon payment of a set-up fee. 29. The method of claim 28, wherein said third page data program step comprises: When the threshold voltage level programmed in the second nonvolatile memory cell is the first threshold voltage level in the second page data program step, the third page data is transferred to the second nonvolatile memory cell by the first threshold voltage. Level and the first intermediate threshold voltage level, In the second page data program step, when the threshold voltage level programmed in the second nonvolatile memory cell is the second intermediate threshold voltage level, the third page data is stored in the first nonvolatile memory cell. And programming to a voltage level and the first intermediate threshold voltage level. Claim 30 was abandoned upon payment of a registration fee. 22. The method of claim 21, wherein the width of the first and second intermediate threshold voltage levels is And wider than a width of at least one of the second to sixth threshold voltage levels. Claim 31 was abandoned upon payment of a registration fee. 31. The method of claim 30, wherein the width of the first and second intermediate threshold voltage levels is And wider than a width of the second to sixth threshold voltage levels. A method of programming a nonvolatile memory device including a first nonvolatile memory cell and a second nonvolatile memory cell, each of which may be programmed to sequentially increase first to sixth threshold voltage levels, A first program step of programming first to third page data into one of a first threshold voltage level and a third threshold voltage level in the first nonvolatile memory cell and the second nonvolatile memory cell; And Programming fourth and fifth page data to one of the fourth to sixth threshold voltage levels in the first nonvolatile memory cell or the second nonvolatile memory cell according to a threshold voltage level at which previous page data is programmed. And a programming step. Claim 33 was abandoned upon payment of a registration fee. The method of claim 32, wherein the second program step, When the first nonvolatile memory cell or the second nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, a fourth portion of the first nonvolatile memory cell or the second nonvolatile memory cell is stored in the fourth nonvolatile memory cell. Program page data or fifth page data to a first threshold voltage level or a fourth threshold voltage level, When the first nonvolatile memory cell or the second nonvolatile memory cell is programmed to a second threshold voltage level in the first program step, a fourth portion is stored in the first nonvolatile memory cell or the second nonvolatile memory cell. Program the page data or the fifth page data to a second threshold voltage level or a fifth threshold voltage level, When the first nonvolatile memory cell or the second nonvolatile memory cell is programmed to a third threshold voltage level in the first program step, a fourth portion of the first nonvolatile memory cell or the second nonvolatile memory cell is stored in the fourth nonvolatile memory cell. And programming page data or fifth page data to a third threshold voltage level or a sixth threshold voltage level. Claim 34 was abandoned upon payment of a registration fee. The method of claim 33, wherein the second program step, When the second nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, the fourth page data is programmed to the first threshold voltage level or the fourth threshold voltage level in the second nonvolatile memory cell. and, When the second nonvolatile memory cell is programmed to the second threshold voltage level in the first program step, the fourth page data is programmed to the second threshold voltage level or the fifth threshold voltage level in the second nonvolatile memory cell. and, When the second nonvolatile memory cell is programmed to the third threshold voltage level in the first program step, the fourth page data is programmed to the third threshold voltage level or the sixth threshold voltage level in the second nonvolatile memory cell. Program method, characterized in that. Claim 35 was abandoned upon payment of a registration fee. The method of claim 34, wherein the second program step, When the first nonvolatile memory cell is programmed to the first threshold voltage level in the first program step, the fifth page data is programmed to the first threshold voltage level or the fourth threshold voltage level in the first nonvolatile memory cell. and, When the first nonvolatile memory cell is programmed to the second threshold voltage level in the first program step, the fifth page data is programmed to the second threshold voltage level or the fifth threshold voltage level in the first nonvolatile memory cell. and, When the first nonvolatile memory cell is programmed to the third threshold voltage level in the first program step, the fifth page data is programmed to the third threshold voltage level or the sixth threshold voltage level in the first nonvolatile memory cell. Program method, characterized in that. Claim 36 was abandoned upon payment of a registration fee. 33. The method of claim 32, wherein the first program step comprises: A first page data program step of programming first page data to the first threshold voltage level or the second threshold voltage level in the first nonvolatile memory cell; Program second page data into the second threshold voltage level or the third threshold voltage level in the first nonvolatile memory cell according to the threshold voltage level programmed in the first nonvolatile memory cell, or the second non-volatile data. A second page data program step of programming a volatile memory cell to said first threshold voltage level or said third threshold voltage level; And Program third page data to the first threshold voltage level or the second threshold voltage level in the first nonvolatile memory cell according to the threshold voltage level programmed in the second nonvolatile memory cell or the second nonvolatile memory cell. And a third page data program step of programming a volatile memory cell to said first threshold voltage level or said second threshold voltage level. Claim 37 was abandoned upon payment of a registration fee. 37. The method of claim 36, wherein said second page data program step comprises: When the threshold voltage level programmed in the first nonvolatile memory cell is the first threshold voltage level in the first page data program step, the second page data is transferred to the second nonvolatile memory cell by the first threshold voltage. Level and the third threshold voltage level, When the threshold voltage level programmed in the first nonvolatile memory cell is the second threshold voltage level in the first page data program step, the second page data is transferred to the first nonvolatile memory cell by the second threshold voltage. Programming to a third level and the third threshold voltage level. Claim 38 was abandoned upon payment of a registration fee. 38. The method of claim 37, wherein said third page data program step comprises: When the threshold voltage level programmed in the second nonvolatile memory cell is the first threshold voltage level in the second page data program step, the third page data is transferred to the second nonvolatile memory cell by the first threshold voltage. A third threshold voltage level and the second threshold voltage level, and when the threshold voltage level programmed in the second nonvolatile memory cell is the third threshold voltage level in the second page data program step, the third page data is read. And programming the first threshold voltage level and the second threshold voltage level into a first nonvolatile memory cell.

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