KR100766343B1 - Method for cleaning and drying wafers - Google Patents

Abstract

The present invention relates to a method for cleaning and drying a substrate which is cleaned and dried while rotating the substrate. The method includes spraying fluid onto the substrate surface while moving from the center of the substrate to the edge on the substrate being rotated; The fluid ejection step includes supplying IPA vapor to the top of the substrate to change the atmosphere around the substrate to IPA vapor, injecting a first fluid to clean the substrate surface as the first nozzle moves from the center of the substrate to the edge; and Spraying a second fluid to dry the surface of the substrate cleaned by the first jet as the first jet moves along the first jet.

Spin, clean

Description

Substrate cleaning drying method {METHOD FOR CLEANING AND DRYING WAFERS}

1 is a side configuration diagram of a substrate cleaning and drying apparatus according to a preferred embodiment of the present invention;

Figure 2 is a plan view of a substrate cleaning and drying apparatus according to a preferred embodiment of the present invention;

3a to 3d are views for explaining the manner in which the injection portion is moved in a straight line in the present invention;

4 to 7 are views for sequentially explaining a substrate cleaning drying process of the present invention;

9 to 11 are views showing a modified example of the injection holes of the injection unit.

* Explanation of symbols for the main parts of the drawings

110: spin head

120: catch cup

130: injection unit

134a: first injection hole

134b: second injection hole

134c: third injection hole

140: moving unit

The present invention relates to a cleaning and drying apparatus for a substrate which is cleaned and dried while rotating the substrate.

Generally, in the semiconductor manufacturing process, deposition, etching, coating of photo-resist, developing, removing asher, and the like of a dielectric material are repeated several times. A process of removing foreign matters generated in each process includes a cleaning process using deionized water or a chemical.

In the application, development, and cleaning process of the photosensitive agent, a process is performed by spraying a liquid chemical or pure water onto a substrate, and a general cleaning and drying apparatus is fixed to a substrate by a wafer chuck capable of processing a single substrate. After rotating the substrate by the motor, the chemical liquid or the pure water is flowed through the injection nozzle from the upper portion of the substrate, and the chemical liquid or the pure water is spread to the entire surface of the substrate by the rotational force of the substrate to perform the process.

As described above, in the single wafer type washing drying apparatus, the washing drying process is performed by drying with N2 gas after rinsing with pure water.

However, as the substrate becomes larger and the pattern formed on the substrate becomes smaller, a phenomenon in which the pure water used in the rinsing process is not completely removed but undried occurs.

The present invention is to solve such a conventional problem, an object of the present invention is to provide a new type of substrate cleaning drying method that can increase the drying effect by applying the Marangoni drying method. Another object is to provide a new type of substrate cleaning and drying method which can shorten the cleaning and rinsing time.

A substrate processing apparatus for achieving the above technical problem comprises a spin head for holding the substrate to face the surface to be processed, and for rotating the substrate; An injector having a nozzle for injecting a fluid for cleaning and drying to a target surface of the substrate placed on the spin head; And a moving part for moving the nozzle of the jetting part from the center of the substrate to the edge; The nozzle includes a first injection port and a second injection port through which different fluids are respectively injected, and the injection holes are arranged in a line on a moving direction of the nozzle or on a line adjacent to the moving direction.

In the present invention, the nozzle is linearly moved from the center of the substrate to the edge by the moving part, and the first injection port and the second injection port are arranged in a line on the linear movement line of the nozzle.

In the present invention, the nozzle is rotatably moved from the center of the substrate to the edge, and the first injection port and the second injection port are arranged in a line on the rotational movement line of the nozzle.

In the present invention further comprises a fluid supply for supplying a fluid to the first injection port and the second injection port; The fluid supply unit is configured to supply fluid when the first injection port or the second injection port is located at the center of the substrate.

In the present invention, the injection portion is moved to the edge of the substrate through the first injection port and the second injection port sequentially through the center of the substrate; The first injection port is injected with a first fluid for cleaning the substrate, the second injection port is injected with a second fluid for drying the substrate.

In the present invention, the first fluid is DIW mixed solution containing DIW or IPA, and the second fluid may be N2 mixed gas containing N2 or IPA.

In the present invention, the nozzle further comprises at least one third injection port installed between the first injection port and the second injection port; The injection unit moves the first injection port, the third injection port and the second injection port through the center of the substrate to the edge of the substrate.

In the present invention, the first injection port is injected with a first fluid for cleaning the substrate, the third injection port is injected with a second fluid for drying the first substrate, the second injection port is a third for drying the second substrate Fluid is injected

According to still another aspect of the present invention, a method of cleaning and drying a substrate in an apparatus having an injection unit in which different injection holes of different fluids are arranged in a line in the direction of movement of the nozzle is provided to maintain the substrate and rotate the substrate. fair; Injecting fluid onto the surface of the substrate while the injector moves from the center of the substrate to the edge; The fluid ejecting step includes the steps of: injecting a first fluid for cleaning the surface of the substrate while a first nozzle is moved from the center of the substrate to the edge; Spraying a second fluid for drying the surface of the substrate cleaned by the first jet as the second jet moves along the first jet.

In the present invention, further comprising the step of spraying a third fluid for secondary drying the surface of the substrate dried by the second injection hole, while the third injection hole is moved along the second injection hole.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the present invention to those skilled in the art will fully convey. Portions denoted by like reference numerals denote like elements throughout the specification.

Referring to FIG. 1, the substrate cleaning and drying apparatus 100 according to a preferred embodiment of the present invention has a spin head 110 on which a substrate is held. A rotating shaft 112 supporting the spin head 110 and transmitting a rotational force is connected to a lower portion of the spinhead, and a spin motor 114 providing a rotational force is connected to the rotational axis.

A catch cup 120 is installed around the spin head 110. The catch cup 120 is to prevent the fluids supplied to the substrate w from scattering during the cleaning and drying process of the substrate, thereby preventing contamination of other devices or the surroundings. do.

Although not shown, the catch cup 120 and the spin head 110 are configured to elevate relatively, and bring the substrate into the catch cup 120 in a state of elevating them, or catch the processed substrate. (120) It is supposed to carry out.

An injection unit 130 for spraying a cleaning liquid (or rinse liquid) and a dry gas on the surface of the substrate is installed on the spin head 110. The nozzle 132 of the spray unit 130 moves the cleaning liquid (or rinse liquid) and dry gas to the target surface of the substrate w while moving from the center c of the substrate to the edge. The injection unit 130 is connected to the arm 142 of the moving unit 140 for the movement of the injection unit 130.

The moving unit 140 includes a drive motor 146, a support shaft 144 that receives rotational force from the drive motor 146, and an arm 142 installed on the support shaft 144. The injection part 130 is installed at the end of the arm 142. The driving motor 146 of the moving unit 140 is operated by a control signal of the controller 180 for controlling the progress of the washing and drying process.

The nozzle 132 of the injection unit 130 has a first injection port 134a, a second injection port 134b, and a third injection port 134c to which different fluids are respectively injected. These injection holes are arranged in a line on the moving direction of the injection unit 130 or a line adjacent to the moving direction. In this embodiment, the injection unit 130 is rotated by the support shaft 144 as the rotation axis, in this case, the injection holes (134a, 134b, 134c) the same rotation passing through the center (c) of the substrate It is arranged in a line on the line a having a radius. If the injection unit 130 moves linearly instead of rotating, the injection holes are arranged in a line on a straight line b passing through the center c of the substrate, as shown in FIG. 3. In the linear movement method of the injection unit 130, a structure in which the injection unit 130 is linearly moved on the arm 142 of the moving unit as shown in FIGS. 3A and 3B or the entire moving unit 140 as shown in FIGS. Various moving structures may be applied, such as a structure that is linearly moved along 148.

The DIW supply unit 162 for substrate cleaning (rinse) is connected to the first injection hole 134a, the N2 supply unit 164 for drying the substrate is connected to the second injection hole 134b, and the third injection hole 134c The high temperature N2 gas supply unit 166 for the secondary drying of the substrate is connected. In this embodiment, in order to obtain a Marangoni effect when drying the substrate, DIW mixed liquid containing IPA vapor may be supplied to the first injection port, and N 2 mixed gas containing IPA vapor may be supplied to the second injection port.

8 to 10 show modifications of the injection holes of the injection unit. FIG. 8 shows an injection unit 130a composed of a DIW injection hole and an N2 injection hole, FIG. 9 shows an injection unit 130b composed of a DIW mixture liquid injection hole and an N2 injection hole mixed with IPA steam, and FIG. 10. There is shown an injection unit 130c consisting of a DIW injection hole and an N2 mixed gas injection hole containing IPA steam. FIG. 11 shows an example in which the IPA vapor is supplied to the entire upper part of the substrate to clean and dry the substrate in a state where the atmosphere around the substrate is changed to the IPA vapor.

As such, the apparatus of the present invention may change the number of the injection holes or the type of the fluid supplied to the injection holes according to the cleaning and drying method of the substrate, and the spacing between the injection holes may also be adjusted.

4 to 7 are views sequentially showing a process of cleaning and drying the substrate by the injection unit.

First, when the substrate w is placed on the spin head 110, the substrate is fixed in vacuum and then rotated. In this case, the first injection port 134a of the injection unit 130 is positioned at the center c of the substrate by the moving unit 140. DIW for cleaning the substrate is injected from the first injection hole 134a. When cleaning of the substrate in the first injection port is started, the moving part 140 slowly moves the injection part 130 from the center of the substrate to the edge. In this case, when the second injection port 134b is positioned at the center of the substrate, N2 gas for drying the substrate is injected from the second injection port 134b (see FIG. 5), and the third injection port 134c is formed on the substrate. When located at the center, the third injection port 134c is injected with a high temperature N 2 gas for drying the substrate in a second manner (see FIG. 6).

As such, the substrate cleaning and drying apparatus 100 of the present invention is characterized in that the spraying unit 130 can simultaneously proceed with the cleaning and drying process of the substrate while moving from the center of the substrate to the edge. It is important to note that the injection unit 130 is not simply moved from the center of the substrate to the edge, but the injection holes of the injection unit are sequentially moved on the moving path passing through the center c of the substrate (process by process, that is, cleaning-primary). Dry-secondary drying), and the fluids are sprayed while they sequentially pass through the center of the substrate.

Here, the substrate refers to a substrate for a photoreticle, a display panel substrate such as a substrate for a liquid crystal display panel or a substrate for a plasma display panel, a substrate for a hard disk, a wafer for an electronic device such as a semiconductor device, and the like. .

In the above, the configuration and operation of the substrate cleaning and drying apparatus according to the present invention have been shown in accordance with the above description and drawings, but these are just described, for example, and various changes and modifications can be made without departing from the technical spirit of the present invention. Of course.

As described above, the present invention has the following effects. First, since the process of cleaning and drying the substrate can be performed at the same time, the overall process time can be shortened. Second, drying defects can be minimized. In particular, a large diameter substrate can be completely dried efficiently and reliably over the entire surface without generating water spots.

Claims (4)

A catch cup having an upper portion and a space therein for performing a process therein, a spin head for supporting a substrate so that a processing surface of the substrate faces upwards in the cap cup during a process, and nozzles through which different fluids are injected A method for cleaning and drying a substrate in an apparatus having spraying portions arranged in a line in the direction of movement of: Holding the substrate and rotating the substrate; Injecting fluid onto the surface of the substrate while the injector moves from the center of the substrate to the edge; The fluid injection step, Supplying IPA vapor over the substrate to change the atmosphere around the substrate into IPA steam; Spraying a first fluid for cleaning the surface of the substrate with a first nozzle moving from the center of the substrate to the edge; And And spraying a second fluid for drying the surface of the substrate cleaned by the first nozzle as the second nozzle moves along the first nozzle. The method of claim 1, The first fluid is DIW mixed solution containing DIW or IPA, And said second fluid is an N2 mixed gas containing N2 or IPA. The method of claim 1, And spraying a third fluid for second drying the surface of the substrate dried by the second nozzle, while a third nozzle moves along the second nozzle. The method of claim 3, The first fluid is DIW mixed solution containing DIW or IPA, The second fluid is N2 mixed gas containing N2 or IPA, And the third fluid is N2 at high temperature.

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