KR100667068B1 - Method for fabricating Organic light emission device panel - Google Patents

Abstract

In the organic light emitting display device, an auxiliary electrode layer is formed on the lower surface of the organic light emitting layer pattern to provide a method of manufacturing an organic light emitting display device capable of improving the interfacial characteristics and stabilization of the organic light emitting layer and the first organic layer.

As a result, it is possible to prevent the production of defective products due to the generation of leakage current, the oxidation of the organic layer, the generation of static electricity, and the like, and the effect of increasing the efficiency and lifespan of the display device can be obtained.

OLED display, auxiliary electrode, laser thermal transfer method

Description

Method for fabricating organic light emission device panel

1A and 1B are cross-sectional views illustrating a method of manufacturing an organic light emitting display device by a conventional laser thermal transfer method.

2 is a cross-sectional view showing the structure of a donor substrate for laser transfer according to an embodiment of the present invention.

3A to 3C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a first embodiment of the present invention.

4A to 4C are diagrams for describing a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention.

Description of reference numerals for the main parts of the drawings

21, 41: insulating substrate 22, 42: first electrode

34 ', 45: auxiliary electrode layer 33', 53 ': light emitting layer

25, 46: second electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an organic light emitting display device, and more particularly, to forming an auxiliary electrode layer between a first organic layer and an emitting layer of an organic light emitting display device, thereby improving efficiency and lifespan. A method of manufacturing a device.

Among the flat panel display devices, the organic light emitting display device has a high response time with a response speed of 1 ms or less, low power consumption, and no self-emission, so there is no problem in viewing angle. . In addition, low-temperature manufacturing is possible, and the manufacturing process is simple based on the existing semiconductor process technology has attracted attention as a next-generation flat panel display device in the future.

In the structure of a general organic light emitting display device, an anode is positioned on a substrate, the organic layer including an emission layer is positioned on the anode, and a cathode is positioned on the organic layer. In this case, the organic layer may further include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer in order to improve light emission efficiency and lifespan of the organic light emitting display device.

In the organic light emitting display device as described above, when a voltage is applied between the anode and the cathode, holes are injected into the light emitting layer from the anode via the hole injection layer and the hole transport layer, and electrons are injected from the cathode via the electron injection layer and the electron transport layer. It is also injected into the light emitting layer. The holes and electrons injected into the emission layer recombine in the emission layer to generate excitons, and the excitons emit light while transitioning from the excited state to the ground state.

Here, in order to manufacture a full color organic light emitting display device, an organic layer including a light emitting layer having three primary colors of R, G, and B should be patterned, but may be formed by vacuum deposition using a shadow mask or conventional photolithography. It is difficult to obtain a fine pattern, and above all, there is a problem in that light emission characteristics such as lifetime and efficiency are deteriorated.

Accordingly, a method of patterning an organic layer using laser induced thermal imaging (LITI) has been introduced as a method to solve this problem. The laser thermal transfer method is a method in which light is emitted from a light source and absorbed by a light-to-heat conversion layer of a donor substrate to convert light into thermal energy, and the organic material formed on the transfer layer is transferred to the substrate by the converted thermal energy.

The laser thermal transfer method as described above can use the spin coating property as it is, and when the large area is achieved, the internal pixel uniformity is excellent. In addition, since the laser thermal transfer method is not a wet process but a dry process, it is possible to solve the problem of deterioration of the life due to the solvent and to finely pattern the organic layer.

The pattern formation method of the organic light emitting display device by the laser thermal transfer method is disclosed in Korean Patent Registration No. 10-0342653, and has already been disclosed in US Patent Nos. 5,998,085, 6,214,520 and 6,114,085.

1A and 1B are cross-sectional views illustrating a method of manufacturing an organic light emitting display device by a conventional laser thermal transfer method.

Referring to FIG. 1A, first, a semiconductor layer 125, a gate insulating layer 120, a gate electrode 135, an interlayer insulating layer 130, and a source are disposed on a buffer layer 110 of an insulating substrate 100 in a conventional manner. A thin film transistor having a / drain electrode 145 is formed.

A passivation film 140 is formed over the entire surface of the interlayer insulating film 130, and a planarization film 150 is formed on the passivation film 140, and then one of the source / drain electrodes 145 is formed. A via hole 165 is formed to expose a predetermined portion of the.

The pixel electrode 160 is formed to contact the exposed predetermined portion of the source / drain electrode 145 through the via hole 165.

In this case, after forming the pixel defining layer 170 covering the pixel electrode 160 having the curved shape of the via hole 160, a portion of the pixel electrode 160 is formed on the pixel defining layer 170. An opening 195 is formed to expose the opening.

Thus, a substrate having a thin film transistor and having the pixel electrode formed thereon is manufactured.

Meanwhile, the donor substrate 200 for laser transfer is manufactured by sequentially stacking the base layer 201, the light-to-heat conversion layer 202, and the transfer layer 203.

Subsequently, after laminating the pixel electrode of the substrate and the transfer layer of the transfer donor substrate, the predetermined portion of the base layer surface of the donor substrate is irradiated with a laser.

Thereafter, as shown in FIG. 1B, an organic light emitting layer pattern 204 ′ is formed on the pixel electrode 160 of the substrate by transferring from a donor substrate. Subsequently, the organic light emitting display device may be manufactured by forming the upper electrode 180 on the entire surface of the substrate including the organic emission layer pattern 204 ′.

The organic light emitting display may further include an organic layer in addition to the organic light emitting layer, and the organic layer may include a hole injection layer and a hole transport layer between the anode and the light emitting layer, between the light emitting layer and the cathode. It may be an electron transport layer, an electron injection layer, the organic layer except for the light emitting layer may be formed by a spin process or deposition as a common layer.

In this case, a leakage current may occur due to poor interface characteristics between the organic layer and the organic light emitting layer during the laser thermal transfer process. The generation of such leakage current not only lowers the luminous effect and lifetime of the light emitting device, but when the leakage current is extremely concentrated, the upper electrode and the lower electrode are short-circuited and the light emitting device does not emit light. It may also cause non-emitting points such as dark spots.

In addition, during the laser thermal transfer process, the substrate may be exposed to the outside before or after the process of bonding the substrate on which the organic layer is formed and the donor substrate, or at the moment of moving the substrate, so that the organic layer may be oxidized. Due to the generation of static electricity, the characteristics of the device may be degraded.

SUMMARY OF THE INVENTION The present invention has been made in the manufacturing process of an organic light emitting display device, by forming an auxiliary electrode layer between a first organic film and a light emitting layer to improve interface characteristics and stability, thereby increasing efficiency and lifespan of the device. There is a purpose.

The present invention to achieve the above object

A base layer;

A light-to-heat conversion layer on the base layer;

A transfer layer positioned on the light-to-heat conversion layer;

The transfer layer provides a donor substrate for laser transfer, comprising an organic layer and an auxiliary electrode layer.

In addition, the present invention

Providing a substrate having a first electrode formed thereon;

Separately, a step of sequentially stacking a transfer layer including a base layer, a light-to-heat conversion layer, an organic layer and an auxiliary electrode layer to produce a donor substrate;

Aligning the first electrode of the substrate and the electrode layer of the donor substrate to face each other;

Irradiating a laser to a predetermined area of the donor substrate to transfer the organic layer and the auxiliary electrode layer onto the pixel electrode, thereby forming a pattern of the organic layer and the auxiliary electrode layer on the first electrode. It provides a method of manufacturing.

In addition, the present invention

An insulating substrate having a first electrode formed thereon;

Forming an auxiliary electrode layer over the entire surface of the insulating substrate on the first electrode;

Separately, a step of sequentially stacking a substrate layer, a light-to-heat conversion layer, a transfer layer to produce a donor substrate;

Aligning the auxiliary electrode layer of the substrate and the transfer layer of the donor substrate to face each other;

A method of manufacturing an organic light emitting display device comprising forming a light emitting layer pattern on an upper portion of the auxiliary electrode layer by irradiating a laser to a predetermined region of the donor substrate to transfer the transfer layer to the auxiliary electrode layer.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

2 is a cross-sectional view showing the structure of a donor substrate for laser transfer according to an embodiment of the present invention.

As shown in FIG. 2, the donor substrate is formed by sequentially stacking a transfer layer 15 including a base layer 11, a light-to-heat conversion layer 12, an organic layer 13, and an auxiliary electrode layer 14. do.

The substrate layer 11 should have transparency in order to transmit light to the light-to-heat conversion layer 12, and may be made of a polymer material or glass substrate having suitable optical properties and sufficient mechanical stability. For example, the polymer material may be at least one selected from the group consisting of polyester, polyacryl, polyepoxy, polyethylene, and polystyrene. More preferably, the base layer 11 may be formed of polyethylene terephthalate.

The light-to-heat conversion layer 12 formed on the base layer 11 absorbs light in the infrared-visible ray region and converts a portion of the light into heat, and has a suitable optical density. And, it is preferable to include a light absorbing material for absorbing light. Here, the light-to-heat conversion layer 12 may be made of a metal film made of Al, Ag, oxides and sulfides thereof, or an organic film made of a polymer including carbon black, graphite, or an infrared dye. Here, the metal film may be formed by vacuum deposition, electron beam deposition, or sputtering, and the organic film is a conventional film coating method, which is formed by one of roll coating, gravure, extrusion, spin coating, and knife coating methods. Can be.

The transfer layer 15 positioned on the light-to-heat conversion layer 12 is formed by sequentially stacking the organic layer 13 and the auxiliary electrode layer 14.

The organic layer may be formed of one monolayer film or one or more multilayer films selected from the group consisting of an electroluminescent organic film, a hole injection organic film, a hole transport organic film, an electron transport organic film, and an electron injection organic film. The organic film layer may be formed by extrusion, spin, knife coating, vacuum deposition, or CVD.

In this case, the auxiliary electrode layer 14 is formed in the transfer layer in order to improve the interface characteristics between the organic light emitting layer transferred by laser thermal transfer and the organic layer formed under the organic light emitting layer when the organic light emitting display device is manufactured. can do. The auxiliary electrode layer may be formed of one material selected from an organic layer, an inorganic layer, and a metal oxide doped with a conductive material. More preferably the auxiliary electrode layer is 4,4'-bis- (1-naphthyl-N-phenylamino) -biphenyl (NPB) / ferric chloride, 1,3,5-tris (N-phenylbenz It may be composed of one material selected from the group consisting of imidazol-2-yl) benzen (TPBI) / lithium, vanadium oxide (ITO) and indium tin oxide (ITO).

An intermediate layer may be further included between the light-to-heat conversion layer 12 and the transfer layer 15 to improve transfer characteristics. The intermediate layer may include at least one of a gas generating layer, a buffer layer, and a metal reflective layer.

When the gas generating layer absorbs light or heat, it causes a decomposition reaction to release nitrogen gas or hydrogen gas, thereby providing a transfer energy, and may be made of pentaerythrite tetranitrate or trinitrotoluene.

The buffer layer serves to prevent the light-heat absorbing material from contaminating or damaging the transfer layer formed in a subsequent process and to control the adhesion with the transfer layer to improve transfer pattern characteristics. Here, the buffer layer may be made of a metal oxide, a nonmetal inorganic compound or an inert polymer.

The metal reflecting film not only serves to transmit more energy to the light-to-heat conversion layer by reflecting the laser irradiated to the base layer of the donor substrate, but also generated from the gas generating layer when a gas generating layer is introduced. Serves to prevent the gas from penetrating into the transfer layer.

Thereby, a laser transfer donor substrate for forming the organic light emitting layer of the organic light emitting display device by the laser transfer method can be manufactured.

3A to 3C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a first embodiment of the present invention.

As shown in FIG. 3A, an insulating substrate 21 is first provided, and a first electrode 22 is formed on the insulating substrate, and the pixel defining layer pattern is positioned on the first electrode and defines a pixel portion. The board | substrate 20 provided with 23 is provided. Herein, the substrate 200 may further include a thin film transistor, an insulating film, and a capacitor between the insulating substrate 21 and the first electrode 22.

The first electrode 22 may be an anode electrode or a cathode electrode.

In the case where the first electrode 22 is an anode, a metal having a high work function is a transparent electrode made of ITO or IZO, or Pt, Au, Ir, Cr, Mg, Ag, Ni, Al, and an alloy thereof. It may be a selected reflective electrode.

In addition, when the first electrode 22 is a cathode, a metal having a low work function is selected from the group consisting of Mg, Ca, Al, Ag, Ba, and alloys thereof. Can be.

A first organic layer 24 may be formed on the first electrode to improve characteristics of the device over the entire surface of the insulating substrate.

The first organic layer may be a hole injection layer and / or a hole transport layer or an electron transport layer and / or an electron transport layer.

In this case, when the first electrode is an anode, the first organic layer may be a hole injection layer and / or a hole transport layer.

The hole injection layer is positioned on the anode, and by forming a hole injection layer of a material having high interfacial adhesion and low ionization energy with the anode electrode, it is easy to inject holes and increase the life of the device. The hole injection layer may be composed of an aryl amine compound, a porphyrin-based metal complex, and starburst amines. More specifically, 4,4 ', 4 "-tris (3-methylphenylphenylamino) trifetylamino (m-MTDATA), 1,3,5-tris [4- (3-methylphenylphenylamino) phenyl] benzene ( m-MTDATB) and phthalocyanine copper (CuPc).

The hole transport layer not only transports holes easily to the light emitting layer, but also serves to increase luminous efficiency by suppressing movement of electrons generated from the second electrode into the light emitting region. The hole transport layer may be formed of an arylene diamine derivative, a starburst compound, a biphenyl diamine derivative having a spiro group, a ladder compound, and the like. More specifically N, N-diphenyl-N, N'-bis (4-methylphenyl) -1,1'-biphenyl-4,4'-diamine (TPD) or 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPB).

On the other hand, the substrate layer 31 is provided, and the transfer layer 35 composed of the light-to-heat conversion layer 32, the organic film layer 33 and the auxiliary electrode layer 34 is sequentially stacked on the substrate layer The donor substrate 30 used is manufactured. Here, the organic layer is an electroluminescent material, such as Alq3 (host) / DCJTB (fluorescent dopant), Alq3 (host) / DCM (fluorescent dopant), CBP (host) / PtOEP (phosphorescent organometallic complex) Low-molecular substances such as) and PFO-based polymers, and polymer materials such as PPV-based polymers. Low molecular weight materials such as) and high molecular weight materials such as PFO polymers and PPV polymers. In addition, it may be made of a low molecular weight material such as DPVBi, Spiro-DPVBi, Spiro-6P, distilbene (DSB), distyryl arylene (DSA), a blue light emitting material, and a polymer material such as PFO-based polymer and PPV-based polymer. .

Subsequently, after the first organic layer 24 of the substrate 20 and the auxiliary electrode layer 34 of the donor substrate 30 are laminated to face each other, the laser is irradiated onto the base layer of the donor substrate.

3B, after the laser is irradiated onto the base layer of the donor substrate, the organic layer and the auxiliary electrode layer are transferred onto the first organic layer 24 of the substrate 20 to form the auxiliary electrode layer 34 ′ and the light emitting layer pattern 34. Form ').

Here, by forming the auxiliary electrode layer 34 'between the first organic film 24 and the light emitting layer pattern 33', the interface property between the first organic film and the light emitting layer can be improved. In addition, it is possible to prevent the static electricity that can be generated during the laser thermal transfer process can eliminate the factors that hinder the life of the device.

3C, a second electrode 25 is formed on the emission layer pattern 34 ′ over the entire surface of the substrate. Here, the second electrode may be an anode electrode or a cathode electrode.

When the second electrode 25 is an anode, the metal having a high work function is a transparent electrode made of ITO or IZO, or Pt, Au, Ir, Cr, Mg, Ag, Ni, Al, or an alloy thereof. It may be a reflective electrode made.

In the case where the second electrode 25 is a cathode, the conductive metal is formed on the light emitting layer pattern 33 ′ and has a low work function in the group consisting of Mg, Ca, Al, Ag, and alloys thereof. One material selected is a transparent electrode having a thin thickness or a reflective electrode having a thick thickness.

Then, the organic light emitting display device may be manufactured by sealing with an encapsulating material such as an upper metal can.

Here, a second organic layer 26 may be further included between the emission layer pattern and the second electrode. The second organic layer may further include at least one selected from the group consisting of a hole injection layer and / or a hole transport layer or a hole suppression layer, an electron transport layer, and an electron transport layer. In this case, when the second electrode is a cathode, the second organic layer may be at least one selected from the group consisting of a hole suppression layer, an electron transport layer, and an electron transport layer.

The hole suppression layer has a hole hole mobility greater than electron mobility in the organic light emitting layer and serves to prevent a decrease in luminous efficiency because the excitons formed in the light emitting layer are distributed over a wide area. The hole suppression layer is 2-biphenyl-4-yl-5- (4-t-butylphenyl) -1,3,4-oxydiazole (PBD), spiro-PBD and 3- (4'-tert- Butylphenyl) -4-phenyl-5- (4'-biphenyl) -1,2,4-triazole (TAZ) may be composed of one material selected from the group consisting of.

The electron transport layer is formed on the organic light emitting layer and is made of a metal compound that can accommodate electrons well, and has a property of stably transporting electrons supplied from the second electrode, and the excellent 8-hydroquinoline aluminum salt It can be made of (Alq3).

The electron injection layer may be mainly formed by mixing a single molecule material for an electron transport layer and a metal for a cathode electrode, or may be made of an inorganic material such as LiF.

4A to 4C are diagrams for describing a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention.

As shown in FIG. 4A, first, an insulating substrate 41 is provided, and a first electrode 42 is formed on the insulating substrate, and the pixel defining layer positioned on the first electrode serves to define a pixel portion. A substrate 40 having a pattern 43 is provided. Herein, the substrate 40 may further include a thin film transistor, an insulating film, and a capacitor between the insulating substrate 41 and the first electrode 42.

The first electrode 42 may be an anode electrode or a cathode electrode.

A first organic layer 44 may be formed over the entire surface of the insulating substrate on the first electrode.

The first organic layer may be a hole injection layer and / or a hole transport layer or an electron transport layer and / or an electron transport layer.

In this case, when the first electrode is an anode, the first organic layer may be a hole injection layer and / or a hole transport layer.

The hole injection layer is positioned on the anode electrode, and the hole injection layer is formed of a material having high interfacial adhesion with the anode electrode and low ionization energy to facilitate hole injection and increase the life of the device. The hole injection layer may be composed of an aryl amine compound, a porphyrin-based metal complex, and starburst amines. More specifically, 4,4 ', 4 "-tris (3-methylphenylphenylamino) trifetylamino (m-MTDATA), 1,3,5-tris [4- (3-methylphenylphenylamino) phenyl] benzene ( m-MTDATB) and phthalocyanine copper (CuPc).

The hole transport layer not only transports holes easily to the light emitting layer, but also serves to increase luminous efficiency by suppressing movement of electrons generated from the second electrode into the light emitting region. The hole transport layer may be formed of an arylene diamine derivative, a starburst compound, a biphenyl diamine derivative having a spiro group, a ladder compound, and the like. More specifically N, N-diphenyl-N, N'-bis (4-methylphenyl) -1,1'-biphenyl-4,4'-diamine (TPD) or 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPB). Here, the first organic film may be formed through laser thermal transfer, vacuum deposition, spin coating, or the like.

Subsequently, unlike the first embodiment, the auxiliary electrode layer 45 is formed over the entire surface of the first organic layer 44. The auxiliary electrode layer 45 may be formed of one material selected from an organic layer, an inorganic layer, and a metal oxide doped with a conductive material. More preferably the auxiliary electrode layer is 4,4'-bis- (1-naphthyl-N-phenylamino) -biphenyl (NPB) / ferric chloride, 1,3,5-tris (N-phenylbenz It may be formed of one material selected from the group consisting of imidazol-2-yl) benzene (TPBI) / lithium, vanadium oxide (ITO) and indium tin oxide (ITO).

In addition, the auxiliary electrode layer may be formed by a conventional method such as spin coating, roll coating, dip coating, gravure coating and deposition.

On the other hand, as shown in Figure 4b, the substrate layer 51 is provided, and the light-heat conversion layer 52 and the transfer layer 53 are sequentially stacked on the substrate layer to form a laser transfer donor substrate 50 Manufacture. In this embodiment, the auxiliary electrode layer is not included in the transfer layer 53.

Subsequently, after the auxiliary electrode layer 45 of the substrate 40 and the transfer layer 53 of the donor substrate 50 are laminated to face each other, the laser is irradiated onto the base layer of the donor substrate so that the transfer layer is The light emitting layer pattern 53 ′ is transferred to the auxiliary electrode layer 45 of the substrate 40.

In this case, as the auxiliary electrode layer is formed on the substrate 40, oxidation and static electricity generation of the organic layer of the substrate may be suppressed at the moment when the substrate 40 is moved for the bonding process between the substrate 40 and the donor substrate 50. In addition, it is possible to suppress the occurrence of leakage current through the characteristics and stabilization between the interface of the first organic film and the light emitting layer. Accordingly, the efficiency and lifespan of the device can be improved.

Subsequently, as shown in FIG. 4C, a second electrode 46 is formed on the emission layer 53 ′ over the entire surface of the substrate. Here, the second electrode may be an anode electrode or a cathode electrode.

When the second electrode 46 is an anode, the metal having a high work function is a transparent electrode made of ITO or IZO, or Pt, Au, Ir, Cr, Mg, Ag, Ni, Al, or an alloy thereof. It may be a reflective electrode made.

In the case where the second electrode 46 is a cathode, a conductive metal formed on the light emitting layer 53 'and having a low work function is selected from the group consisting of Mg, Ca, Al, Ag, and alloys thereof. It is formed of a transparent electrode having a thin thickness as a material of, or a reflective electrode having a thick thickness.

Then, the organic light emitting display device may be manufactured by sealing with an encapsulating material such as an upper metal can.

Here, a second organic layer 47 may be further included between the emission layer pattern and the second electrode. The second organic layer 47 may further include at least one selected from the group consisting of a hole injection layer and / or a hole transport layer or a hole suppression layer, an electron transport layer, and an electron transport layer. In this case, when the second electrode is a cathode, the second organic layer may be at least one selected from the group consisting of a hole suppression layer, an electron transport layer, and an electron transport layer.

The hole suppression layer has a hole hole mobility greater than electron mobility in the organic light emitting layer and serves to prevent a decrease in luminous efficiency because the excitons formed in the light emitting layer are distributed over a wide area. The hole suppression layer is 2-biphenyl-4-yl-5- (4-t-butylphenyl) -1,3,4-oxydiazole (PBD), spiro-PBD and 3- (4'-tert- Butylphenyl) -4-phenyl-5- (4'-biphenyl) -1,2,4-triazole (TAZ) may be composed of one material selected from the group consisting of.

The electron transport layer is formed on the organic light emitting layer and is made of a metal compound that can accommodate electrons well, and has a property of stably transporting electrons supplied from the second electrode, and the excellent 8-hydroquinoline aluminum salt It can be made of (Alq3).

The electron injection layer may be mainly formed by mixing a single molecule material for an electron transport layer and a metal for a cathode electrode, or may be made of an inorganic material such as LiF.

As described above, according to the present invention, an organic light emitting display device including an auxiliary electrode layer between the first organic layer and the light emitting layer for improving the characteristics of the organic light emitting layer can be manufactured.

In addition, the present invention can manufacture an organic light emitting display device capable of suppressing the occurrence of leakage current, oxidation of the organic film and generation of static electricity by improving the interfacial properties and stabilization of the organic light emitting layer and the first organic film.

Accordingly, the present invention can improve the efficiency and life of the device, it is possible to manufacture an organic light emitting display device that can reduce the defective rate.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (18)

A base layer; A light-to-heat conversion layer on the base layer; A transfer layer positioned on the light-to-heat conversion layer; The donor substrate for a laser transfer, characterized in that the transfer layer includes an organic layer and an auxiliary electrode layer. The method of claim 1, The auxiliary electrode layer is a laser transfer donor substrate, characterized in that formed on top of the organic layer. The method of claim 1, The auxiliary electrode layer is a laser transfer donor substrate, characterized in that formed of one material selected from an organic film, an inorganic film, a metal oxide doped with a conductive material. The method of claim 3, wherein The auxiliary electrode layer is 4,4'-bis- (1-naphthyl-N-phenylamino) -biphenyl (NPB) / ferric chloride, 1,3,5-tris (N-phenylbenzimidazole-2 -Il) benzene (TPBI) / lithium, vanadium oxide (ITO) and indium tin oxide (ITO) is a donor substrate for laser transfer, characterized in that made of one material selected from the group consisting of. The method of claim 1, The base layer is a laser transfer donor substrate, characterized in that the transparent polymer selected from the group consisting of polyester, polyacryl, polyepoxy, polyethylene, polypropylene and polystyrene or formed of glass. The method of claim 1, The light-heat conversion layer is a laser transfer donor substrate, characterized in that made of one material selected from the group consisting of an organic film, a metal, an oxide or sulfide of the metal and alloys thereof containing a light absorbing material. The method of claim 1, The donor substrate for laser transfer further comprises at least one layer selected from the group consisting of a gas generation layer, a buffer layer and a metal reflective film between the light-to-heat conversion layer and the transfer layer. Providing a substrate having a first electrode formed thereon; Separately, a step of sequentially stacking a transfer layer including a base layer, a light-to-heat conversion layer, an organic layer and an auxiliary electrode layer to produce a donor substrate; Aligning the first electrode of the substrate and the transfer layer of the donor substrate to face each other; Irradiating a laser to a predetermined area of the donor substrate to transfer the organic layer and the auxiliary electrode layer onto the pixel electrode, thereby forming a pattern of the organic layer and the auxiliary electrode layer on the first electrode. Manufacturing method. The method of claim 8, The organic light emitting display device is a method of manufacturing an organic light emitting display device, characterized in that the auxiliary electrode layer pattern is formed between the first electrode and the organic layer pattern. The method of claim 8, And the first electrode is an anode electrode or a cathode electrode. The method of claim 8, The organic light emitting display device may further include a first organic layer or a second organic layer between the first electrode and the auxiliary electrode. The method of claim 11, Wherein the first organic layer is a hole injection layer and / or a hole transport layer, and the second organic layer is an electron injection layer and / or an electron transport layer. An insulating substrate having a first electrode formed thereon; Forming an auxiliary electrode layer over the entire surface of the insulating substrate on the first electrode; Separately, a step of sequentially stacking a substrate layer, a light-to-heat conversion layer, a transfer layer to produce a donor substrate; Aligning the auxiliary electrode layer of the substrate and the transfer layer of the donor substrate to face each other; And forming a light emitting layer pattern on the auxiliary electrode layer by irradiating a laser to a predetermined region of the donor substrate to transfer the transfer layer to the auxiliary electrode layer. The method of claim 13, And the auxiliary electrode layer is formed of one material selected from an organic layer, an inorganic layer, and a metal oxide doped with a conductive material. The method of claim 14, The auxiliary electrode layer is 4,4'-bis- (1-naphthyl-N-phenylamino) -biphenyl (NPB) / ferric chloride, 1,3,5-tris (N-phenylbenzimidazole-2 Yl) benzene (TPBI) / lithium, vanadium oxide (ITO), and indium tin oxide (ITO). The method of claim 13, The organic light emitting display device may further include a first organic layer or a second organic layer between the first electrode and the auxiliary electrode. The method of claim 16, Wherein the first organic layer is a hole injection layer and / or a hole transport layer, and the second organic layer is an electron injection layer and / or an electron transport layer. An organic light emitting display device which is manufactured by the method of claim 8 or 13.

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