KR100343203B1 - Semiconductor laser device - Google Patents

Semiconductor laser device Download PDF

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KR100343203B1
KR100343203B1 KR1019930021946A KR930021946A KR100343203B1 KR 100343203 B1 KR100343203 B1 KR 100343203B1 KR 1019930021946 A KR1019930021946 A KR 1019930021946A KR 930021946 A KR930021946 A KR 930021946A KR 100343203 B1 KR100343203 B1 KR 100343203B1
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layer
ingaalp
current blocking
semiconductor laser
ingap
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KR1019930021946A
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KR950012900A (en
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김택
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삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: A semiconductor laser device is provided to improve the efficiency and the credibility by forming a p-GaInP buffer layer between a p-GaAs substrate and a p-InGaAlp clad layer. CONSTITUTION: A p-InGaP buffer layer(20) is formed on a p-GaAs substrate(10). An n-InGaAIP current blocking layer(30) is formed on the p-InGaP buffer layer(20) provided on the p-GaAs substrate(10) and has a V-shaped-groove on a central part thereof. A p-InGaAIP lower clad layer(40) fills up the V-shaped-groove and is formed on the n-InGaAIP current blocking layer(30). An InGaP active layer(50) is formed on the p-InGaAIP lower clad layer(40). An n-InGaAIP upper clad layer(60) and n-GaAs cap layer(70) are formed on the InGaP active layer(50).

Description

반도체 레이저 소자Semiconductor laser device

본 발명은 광 디스크나 광 자기디스크등의 광정보처리용으로 사용되는 반도체 레이저 소자에 관한 것으로서, 특히 고효율과 신뢰성이 개선된 굴절률 도파형의 반도체 레이저소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor laser devices used for optical information processing such as optical disks and magneto-optical disks, and more particularly, to a refractive index waveguide semiconductor laser device having improved efficiency and reliability.

일반적으로 유도방출에 의한 빛의 증폭을 이용한 레이저는 단광성(單光性), 지향성 및 고강도를 특징으로 하며, 헬륨-네온(He-Ne) 레이저나, 아르곤(Ar) 레이저와 같은 기체 레이저와 YAG레이저나 루비 레이저와 같은 고체 레이저로부터, 소형이며 고주파에서 바이어스 전류를 변조함으로써 변조가 용이한 반도체 레이저에 이르는 다양한 종류가 있다. 그 중에서도 특히 반도체 레이저는 상기와 같은 특성 때문에 컴팩트 디스크 플레이어(CDP)나 광 메모리, 고속 레이저 프린터등의 정보처리기기 및 광 통신용기기로서, 기존의 헬륨-네온등의 기체레이저등을 대체하여 그 응용범위를 넓혀가고 있다.In general, lasers using amplification of light by induced emission are characterized by unipolarity, directivity, and high intensity, and are similar to gaseous lasers such as helium-neon and argon lasers. There are various types, ranging from solid state lasers such as YAG lasers and ruby lasers to semiconductor lasers that are small and easy to modulate by biasing the bias current at high frequencies. Among them, semiconductor lasers are particularly useful as information processing devices such as compact disc players (CDPs), optical memories, high-speed laser printers, and optical communication devices, replacing conventional gas lasers such as helium-neon. The range is expanding.

또 반도체 레이저 소자는 P-N접합을 기본으로 하여 양자전자(Quantum Electron)의 개념을 포함하는 반도체 소자로서, 반도체물질로 구성된 박막, 즉 활성층에 전류를 주입하여 인위적으로 전자-정공재결합을 유도함으로써 재결합에 따르는 감소 에너지에 해당하는 빛을 발진한다.A semiconductor laser device is a semiconductor device including the concept of quantum electrons based on PN junctions. The semiconductor laser device injects current into a thin film made of a semiconductor material, that is, an active layer, and artificially induces electron-hole recombination to recombine. It emits light corresponding to the reduced energy that follows.

최근 반도체 레이저의 성능은, 파장을 결정하는 재료의 개발과, 임계전류, 광출력, 발진효율, 단일파장, 스펙트럼선폭 따위의 특성과 신뢰성을 결정하는 소자구조를 실현하기 위한 에피택셜(Epitaxial) 성장기술 및 미세가공 기술의 진보에 의하여 현저한 발전을 거듭하고 있다. 특히 에피택셜 성장기술에서 종래의 액상성장법(Liquid Phase Epitaxy;LPE법)을 대신하여 유기금속 기상성장법(Metal Organic Chemical Vapor Deposition;MOCVD) 및 MBE(Molecular Beam Epitaxy)법등이 사용되어, 이에 따라서 원자층 수준의 제어가 가능하게 되었다.In recent years, the performance of semiconductor lasers has grown epitaxially to develop materials that determine wavelengths and to realize device structures that determine characteristics and reliability such as critical current, light output, oscillation efficiency, single wavelength, and spectral line width. Significant developments are being made due to advances in technology and micromachining technology. In particular, in the epitaxial growth technology, instead of the conventional liquid phase epitaxy (LPE method), the organic metal vapor deposition (MOCVD) method and the molecular beam epitaxy (MBE) method are used. Atomic level control is now possible.

한편 이러한 반도체 레이저 소자는 광출력(Optical Power)를 높이고, 효율을 증대시키며, 원하는 형태의 비임을 얻기 위하여 여러가지 형태의 소자 구조를 갖고 있다. 이러한 반도체 레이저 다이오드의 소자구조 중에서 종래 VSIS (V-channel substrate inner stripe) 구조의 한 예를 제1도에 도시하였다.Meanwhile, such semiconductor laser devices have various types of device structures in order to increase optical power, increase efficiency, and obtain a beam of a desired shape. An example of a conventional VSIS structure of a semiconductor laser diode is shown in FIG. 1.

도면을 참조하면, 저면에 p-하부전극(8)이 형성된 p-GaAs 기판(1)의 상면에 p-GaAs 버퍼층(2)과 n-GaAs 전류차단층(3)이 순차적으로 형성되어 있으며, 상기 버퍼층과 전류차단층의 중앙 소정부위가 V자홈 형태로 식각되어 있다. 상기 V자홈과전류차단층의 상면에 p-AlGaInP클래드층(4:하부 클래드층), GaInP 활성층(5), n-AlGaInP 클래드층(6:상부 클래드층) 및 n-GaAs 캡층(7)이 순차적으로 적층되어 있다. 계속하여 상기 n-GaAs 캡층(7)상부에 n-상부전극(9)이 형성되어 있다.Referring to the drawings, the p-GaAs buffer layer 2 and the n-GaAs current blocking layer 3 are sequentially formed on the top surface of the p-GaAs substrate 1 having the p-bottom electrode 8 formed thereon. The central predetermined portions of the buffer layer and the current blocking layer are etched in a V-shaped groove. A p-AlGaInP cladding layer (4: lower cladding layer), a GaInP active layer 5, an n-AlGaInP cladding layer (6: upper cladding layer), and an n-GaAs cap layer 7 are sequentially formed on the upper surface of the V-shaped overcurrent blocking layer. Are stacked. Subsequently, an n-top electrode 9 is formed on the n-GaAs cap layer 7.

상기 종래기술은 2차 에피택시(성장)되는 구조로서 제작단계는 구체적으로는, 먼저 p-GaAs 기판(1)의 상부에 p-GaAs 버퍼층(2)과 n-GaAs 전류차단층(3)이 순차적으로 분자선 성장법이나 유기금속 기상성장법(MOCVD)으로 1차 성장시킨다.The prior art is a structure in which the second epitaxy (growth) is a manufacturing step, specifically, the p-GaAs buffer layer (2) and the n-GaAs current blocking layer (3) on top of the p-GaAs substrate (1) Subsequently, primary growth is performed by molecular beam growth method or organometallic vapor phase growth method (MOCVD).

다음에 상기 기판 상에 형성된 p-GaAs 버퍼층(2)과 n-GaAs 전류차단층(3)의 중앙 소정부위를 사진식각하여 V형홈 구조를 형성한다.Next, a central portion of the p-GaAs buffer layer 2 and the n-GaAs current blocking layer 3 formed on the substrate is photo-etched to form a V-shaped groove structure.

그다음에 상기 전류차단층과 V형홈의 상부에 p-AlGaInP 하부클래드층(4), GaInP 활성층(5), n-AlGaInP 상부 클래드층(6) 및 n-GaAs 캡층(7)을 순차적으로 분 자선성장법(MBE)이나 유기금속 기상성장법(MOCVD)으로 2차성장시켜 소자를 제작한다.Then, the p-AlGaInP lower cladding layer 4, the GaInP active layer 5, the n-AlGaInP upper cladding layer 6 and the n-GaAs cap layer 7 are sequentially disposed on the current blocking layer and the V-shaped groove. The device is fabricated by secondary growth using a growth method (MBE) or an organometallic vapor phase growth method (MOCVD).

이상의 종래 VSIS구조는 2차 에피택시(성장)으로 제작되는 구조로서 상기 전류차단층에 형성된 V형홈을 통하여 전류가 활성영역으로 제한되게 공급되고, 상기 활성층이 V형홈의 상단 양끝에서 약간의 굴곡을 갖음으로 인하여 활성층의 횡방향으로의 굴절률변화를 갖게되어 광도파가 수행되는 구조이다. 또 종래의 기술은 2차 에피택시로 제작되므로 제작이 손쉽고, 기본 모우드 발진과 비점수차거리가 작은 장점이 있다.The conventional VSIS structure is a structure manufactured by secondary epitaxy (growth), the current is supplied to the active region limited through the V-shaped groove formed in the current blocking layer, the active layer is slightly curved at both ends of the upper end of the V-shaped groove Due to having a refractive index change in the transverse direction of the active layer is a structure that the optical waveguide is performed. In addition, the conventional technology is easy to manufacture because it is produced by the secondary epitaxy, there is an advantage that the basic mode oscillation and astigmatism distance is small.

그러나 상기 종래의 구조는 전류차단층의 돌출부분(제1도에서 점선으로 표시: a)에서 활성층으로 부터 발생된 레이저빔을 흡수하게되어 반도체 레이저 소자의 효율을 저하시킨다. 또한 상기 흡수된 레이저빔으로 인하여 열이 발생하여 반도체 레이저소자의 퇴화를 가속화시켜 신뢰도를 저하시키는 문제점이 있다.However, the conventional structure absorbs the laser beam generated from the active layer in the protruding portion of the current blocking layer (indicated by a dotted line in FIG. 1), thereby lowering the efficiency of the semiconductor laser device. In addition, heat is generated due to the absorbed laser beam, thereby accelerating degeneration of the semiconductor laser device, thereby lowering reliability.

또 p-GaAs버퍼층과 p-AlGaInP 클래드층이 직접 접촉하는 구조로 되어있어 P형-P형 이종접합시 가전자대에서 발생하는 스파이크(spike)에 의해 정공의 흐름이제한되어 소자의 직렬저항값이 커지는 문제점이 있다.In addition, since the p-GaAs buffer layer and the p-AlGaInP cladding layer are in direct contact with each other, the flow of holes is limited by spikes generated in the valence band during P-type P-type heterojunction. There is a growing problem.

또한 종래의 기술에 있어서 상기 활성층은 V형홈 위에 2차에피택시로 형성되기 때문에 1차 에피택시후 V형홈 영역의 노출로 인한 오염확률이 높고, 상기 V형홈의 오염은 2차 에피택시의 결정결함을 유발하여 반도체 레이저소자의 효율 및 신뢰도가 같이 저하되는 문제점이 있다.In addition, in the related art, since the active layer is formed by the secondary epitaxy on the V-type groove, the probability of contamination due to the exposure of the V-type groove region after the first epitaxy is high, and the contamination of the V-type groove is a crystallization defect of the secondary epitaxy. There is a problem in that the efficiency and reliability of the semiconductor laser device is lowered as well.

따라서, 본 발명의 목적은 상기 문제점이 개선된 신규한 구조를 갖는 반도체 레이저 소자를 제공하는 것이다.Accordingly, it is an object of the present invention to provide a semiconductor laser device having a novel structure in which the above problems are improved.

상기 목적을 달성하기 의하여 본 발명의 반도체 레이저 소자는,The semiconductor laser device of the present invention by achieving the above object,

기판 상에 형성된 InGaP 버퍼층;An InGaP buffer layer formed on the substrate;

상기 InGaP 버퍼층 상에 형성되고 중앙 부위에 V자홈을 갖는 InGaAlP 전류차단층;An InGaAlP current blocking layer formed on the InGaP buffer layer and having a V-groove at a central portion thereof;

상기 V자홈을 매립하면서 상기 전류차단층 상에 형성된 InGaAlP 하부 클래드층;An InGaAlP lower clad layer formed on the current blocking layer while filling the V-shaped groove;

상기 InGaAlP 하부 클래드층 상에 형성된 InGaP 활성층; 및An InGaP active layer formed on the InGaAlP lower clad layer; And

상기 InGaP 활성층 상에 형성된 InGaAlP 상부 클래드층을 구비하는 것을 특징으로 한다.And an InGaAlP upper clad layer formed on the InGaP active layer.

본 발명은 기판 상부에 p-InGaP 버퍼층의 도입으로 반도체 레이저소자의 직렬저항값을 줄일 수 있고, 전류차단층을 InGaP 활성층 보다 밴드캡 에너지가 큰 InGaAlP층을 이용하여 형성하기 때문에 전류차단층에 의한 광흡수가 발생하지 않아 소자의 효율과 신뢰도를 높일 수 있다.The present invention can reduce the series resistance of a semiconductor laser device by introducing a p-InGaP buffer layer on the substrate, and the current blocking layer is formed using an InGaAlP layer having a larger band cap energy than the InGaP active layer. Since no light absorption occurs, the efficiency and reliability of the device can be improved.

이하 첨부된 도면을 참조하면서 본 발명의 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

제2도는 본 발명에 따른 반도체 레이저 소자의 구조를 도시한 단면구조이다.2 is a cross-sectional structure showing the structure of a semiconductor laser device according to the present invention.

저면에 p하부전극이 형성된 p-GaAs 기판(1O) 상에 중앙부위에 V자홈을 갖는 p-InGaP 버퍼층(20)과 n-InGaAlP 전류차단층(30)이 마련되어 있다. 상기 V자홈과 전류차단층 상부에 형성되는 p-AlGalnP 하부 클래드층(40)과 GaInP 활성층(50) 마련되어 있으며 상기 활성층(50) 상부에 n-InGaAlP 상부 클래드층(60)과 n-GaAs 캡층(70)형성되어 있다.The p-InGaP buffer layer 20 having a V-shaped groove and the n-InGaAlP current blocking layer 30 are provided on the p-GaAs substrate 10 having the p lower electrode formed on the bottom thereof. The p-AlGalnP lower cladding layer 40 and the GaInP active layer 50 are formed on the V-groove and the current blocking layer, and the n-InGaAlP upper cladding layer 60 and the n-GaAs cap layer are formed on the active layer 50. 70) is formed.

본 발명의 반도체 레이저 소자는 전류차단층으로 GaInP 활성층 보다 밴드캡 에너지가 큰 InGaAlP층을 이용하여 형성하고, p-InGaP 버퍼층(20)을 기판(10) 상부에 형성하여 InGaAlP 하부 클래드층(40)과 접촉되는 구조로 되어 있다. 또한 p-InGaAlP 전류차단층(30) 위에 p-InGaAlP 하부 클래드층(40)과 GaInP활성층(50)을 성장시켰다.The semiconductor laser device of the present invention is formed using an InGaAlP layer having a larger band cap energy than a GaInP active layer as a current blocking layer, and a p-InGaP buffer layer 20 is formed on the substrate 10 to form an InGaAlP lower clad layer 40. It is in contact with the structure. Further, the p-InGaAlP lower cladding layer 40 and the GaInP active layer 50 were grown on the p-InGaAlP current blocking layer 30.

이상의 본 발명 있어서, 종래기술에 있어서 GaAS 전류차단층에 의한 발진빔의 흡수가 발생하여 효율이 저하되고 소자가 열화되는 종래의 문제점을 GaInP 활 성층보다 에너지 밴드캡이 큰 InGaAlP 전류차단층(30)을 사용하여 극복하였다.In the present invention, the conventional problem that the absorption of the oscillation beam by the GaAS current blocking layer occurs in the prior art, the efficiency is lowered and the device is degraded, the InGaAlP current blocking layer 30 having a larger energy band cap than the GaInP active layer. It was overcome using.

또한 p-GaInP 버퍼층(20)을 상기 p-GaAs 기판(10)과 p-InGaAlP 클래드층(40)사이에 형성하여, 이종접합시 가전자대에서 발생하는 스파이크(spike) 크기를 감소시켜 소자의 직렬저항 값을 감소시켰다.In addition, a p-GaInP buffer layer 20 is formed between the p-GaAs substrate 10 and the p-InGaAlP cladding layer 40 to reduce the size of spikes generated in the valence band during heterojunction, thereby reducing the series of devices. The resistance value was reduced.

본 발명은 상기 V자홈과 상기 n-InGaAlP 전류차단층(30) 상부에 p-InGaAlP 하부 클래드층(40)과 InGaP 활성층(50)을 성장시켜 상기 하부 클래드층(40)과 활성층(50)의 결정결함을 줄여 레이저소자의 광적, 전기적특성이 향상된다.According to the present invention, the p-InGaAlP lower cladding layer 40 and the InGaP active layer 50 are grown on the V-groove and the n-InGaAlP current blocking layer 30 to form the lower cladding layer 40 and the active layer 50. By reducing the crystal defects, the optical and electrical characteristics of the laser device are improved.

이러한 구조의 본 발명의 반도체 레이저 소자는 변형된 VSIS 구조를 가지게 된다.The semiconductor laser device of the present invention having such a structure will have a modified VSIS structure.

이하, 상기 본 발명의 반도체 레이저 소자의 제조 방법을 상세하게 설명한다.Hereinafter, the manufacturing method of the semiconductor laser element of this invention is demonstrated in detail.

제3도 내지 제5도는 상기한 본 발명의 레이저 다이오드의 제조방법의 일례를 나타내기 위한 개략도이다.3 to 5 are schematic diagrams showing an example of the method of manufacturing the laser diode of the present invention described above.

먼저 제3도를 참조하면 기판(10) 상에 p-InGaP 버퍼층(2O)과 n-InGaAlP 전류차단층(30)을 순차적으로 1차 에피택시(성장)에 의해 성장시킨다.First, referring to FIG. 3, the p-InGaP buffer layer 20 and the n-InGaAlP current blocking layer 30 are sequentially grown on the substrate 10 by primary epitaxy (growth).

다음에 제4도를 참조하면 상기 형성된 버퍼층(20)과 전류차단층(30)을 통상의 포토리소그라피공정을 통하여 습식에칭을 하여 V홈을 형성한다.Next, referring to FIG. 4, the formed buffer layer 20 and the current blocking layer 30 are wet-etched through a conventional photolithography process to form V grooves.

그다음에, 제5도를 참조하면 상기 V홈과 상기 전류차단층(30)의 상부에 p-InGaAlP 하부 클래드층(40)과 GaInP 활성층(50)을 순차적으로 형성하고, 상기 활성층(50) 상에 n-InGaAlP 상부 클래드층(6O)과 n-GaAs 캡층(70)을 형성하여 소자를 제작한다.Next, referring to FIG. 5, the p-InGaAlP lower cladding layer 40 and the GaInP active layer 50 are sequentially formed on the V-groove and the current blocking layer 30, and then on the active layer 50. An n-InGaAlP upper cladding layer 60 and an n-GaAs cap layer 70 are formed on the device.

본 발명은 종래기술에서 GaAs 전류차단층에 의한 발진빔의 흡수가 발생하여효율이 저하되고 소자가 열화되는 종래의 문제점을 GalnP 활성층보다 에너지 밴드캡이 큰 InGaAlP 전류차단층(30)을 이용하여 극복하였으며, 효율과 신뢰도가 향상되고 열발생이 적으므로 고출력동작이 가능하다.The present invention overcomes the conventional problem that the absorption of the oscillation beam by the GaAs current blocking layer is reduced in the prior art by using the InGaAlP current blocking layer 30 having a larger energy band cap than the GalnP active layer. It has high efficiency, reliability and low heat generation.

또한 p-GaInP 버퍼층(2O)을 상기 p-GaAs 기판(10)과 p-InGaAlP 클래드층(40) 사이에 형성하여 이종접합시 가전자대에서 발생하는 스파이크(spike) 크기를 감소시켜 소자의 전기적 특성을 향상시킨다.In addition, a p-GaInP buffer layer 20 is formed between the p-GaAs substrate 10 and the p-InGaAlP cladding layer 40 to reduce the spike size generated in the valence band during heterojunction, thereby reducing the electrical characteristics of the device. To improve.

본 발명에 있어서, 상기 V자홈과 상기 n-InGaAlP 전류차단층(30) 상부에 p-InGaAlP 하부 클래드층(4O)과 InGaP 활성층(5O)을 성장시켜 상기 하부 클래드층 (40)과 활성층(50)의 결정결함을 줄이기 때문에 반도체 레이저 소자의 효율 및 신뢰도가 향상된다.In the present invention, the lower clad layer 40 and the active layer 50 are grown by growing a p-InGaAlP lower cladding layer 40 and an InGaP active layer 50 on the V-groove and the n-InGaAlP current blocking layer 30. Since the crystal defects are reduced, the efficiency and reliability of the semiconductor laser device are improved.

이상, 본 발명을 상기 실시예에 의해 구체적으로 설명하였지만, 본 발명은 이에 제한되는 것은 아니고, 당업자의 통상의 지식의 범위내에서 그 변형이나 개량이 가능함은 물론이다.As mentioned above, although this invention was demonstrated concretely by the said Example, this invention is not limited to this, A deformation | transformation and improvement are a matter of course within the range of common knowledge of a person skilled in the art.

제1도는 종래의 기술에 의한 반도체 레이저 소자의 개략적 단면도.1 is a schematic cross-sectional view of a semiconductor laser device according to the prior art.

제2도는 본 발명에 따른 반도체 레이저 소자의 개략적 단면도.2 is a schematic cross-sectional view of a semiconductor laser device according to the present invention.

제3도 내지 제5도는 종래 기술에 의한 반도체 레이저 소자의 제조단계별 개략적 단면도.3 to 5 are schematic cross-sectional views of manufacturing steps of a semiconductor laser device according to the prior art.

Claims (1)

기판 상에 형성된 InGaP 버퍼층;An InGaP buffer layer formed on the substrate; 상기 InGaP 버퍼층 상에 형성되고 중앙 부위에 V자홈을 갖는 InGaAlP 전류차단층;An InGaAlP current blocking layer formed on the InGaP buffer layer and having a V-groove at a central portion thereof; 상기 V자홈을 매립하면서 상기 전류차단층 상에 형성된 InGaAlP 하부 클래드층;An InGaAlP lower clad layer formed on the current blocking layer while filling the V-shaped groove; 상기 InGaAlP 하부 클래드층 상에 형성된 InGaP 활성층; 및An InGaP active layer formed on the InGaAlP lower clad layer; And 상기 InGaP 활성층 상에 형성된 InGaAlP 상부 클래드층을 구비하는 것을 특징으로 하는 반도체 레이저소자.And an InGaAlP upper clad layer formed on the InGaP active layer.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62200786A (en) * 1986-02-28 1987-09-04 Toshiba Corp Semiconductor laser device and manufacture thereof
JPS63164374A (en) * 1986-12-26 1988-07-07 Toshiba Corp Semiconductor laser device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62200786A (en) * 1986-02-28 1987-09-04 Toshiba Corp Semiconductor laser device and manufacture thereof
JPS63164374A (en) * 1986-12-26 1988-07-07 Toshiba Corp Semiconductor laser device and manufacture thereof

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