KR0147425B1 - Tetra ethyl otho silicate process equipment - Google Patents
Tetra ethyl otho silicate process equipmentInfo
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- KR0147425B1 KR0147425B1 KR1019940016355A KR19940016355A KR0147425B1 KR 0147425 B1 KR0147425 B1 KR 0147425B1 KR 1019940016355 A KR1019940016355 A KR 1019940016355A KR 19940016355 A KR19940016355 A KR 19940016355A KR 0147425 B1 KR0147425 B1 KR 0147425B1
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- process tube
- teos
- tube
- ring
- temperature
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 TEOS(Tetra Ethyl Otho Silicate)가스를 사용하여 웨이퍼상에 TEOS막을 증착하는 공정을 수행하는 TEOS 증착장치에 관한 것으로, 공정 튜브(2); 상기 공정 튜브(2)의 하부에 설치되어 상기 공정튜브(2)를 지지하고 실링을 유지하는 매니폴드부(4); 상기 공정튜브(2)의 외주에 설치되어 상기 공정 튜브(2)를 가열하는 히터(8); 상기 공정튜브(2)와 매니폴드부(4)의 접합지점에 진공을 유지하기 위하여 설치되는 오-링(12); 상기 공정튜브(2) 내에 TEOS 가스를 주입하는 TEOS 가스 주입수단(10); 및 상기 오-링(12)을 보호하기 위하여 소정의 냉각수를 투입하는 냉각수 주입관(14)을 포함하여 구성되는 것을 특징으로 한다.The present invention relates to a TEOS deposition apparatus for performing a process of depositing a TEOS film on a wafer using TEOS (Tetra Ethyl Otho Silicate) gas, comprising: a process tube (2); A manifold part 4 installed at a lower portion of the process tube 2 to support the process tube 2 and to maintain a sealing; A heater 8 installed at an outer circumference of the process tube 2 to heat the process tube 2; An o-ring (12) installed to maintain a vacuum at a junction between the process tube (2) and the manifold portion (4); TEOS gas injection means (10) for injecting TEOS gas into the process tube (2); And a coolant injection pipe 14 for introducing a predetermined coolant to protect the o-ring 12.
Description
제1도는 본 발명에 따른 TEOS 증착 공정장치를 나타낸 단면도.1 is a cross-sectional view showing a TEOS deposition process apparatus according to the present invention.
제2도는 본 발명에 따른 증착 공정장치의 바닥부를 나타낸 부분 확대 단면도.2 is a partially enlarged cross-sectional view showing the bottom of the deposition process apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
2 : 공정튜브 4 : 매니폴드부2 process tube 4 manifold
6 : 캡 8 : 히터6: cap 8: heater
10 : TEOS 가스주입기 12 : 오-링10 TEOS gas injector 12 O-ring
14 : 냉각수 공급관14: cooling water supply pipe
본 발명은 TEOS(Tetra Ethyl Otho Silicate) 가스를 사용하여 웨이퍼 상에 TEOS 막을 증착시키는 공정을 수행하는 TEOS 공정장치에 관한 것으로, 특히 고온에서 진행되는 증착공정시, 공정튜브의 표면온도 이상의 내열온도를 가지는 오-링을 구비하므로써, 오-링을 보호하기 위해 사용되는 냉각수의 유량을 감소시키며, 이에 따라 상기 냉각수의 온도에 의해 공정가스가 응축되어 공정튜브 내에 분진이 발생되는 것을 방지하는 TEOS 공정장치에 관한 것이다.The present invention relates to a TEOS process apparatus for performing a process of depositing a TEOS film on a wafer using TEOS (Tetra Ethyl Otho Silicate) gas. The branch has an O-ring, thereby reducing the flow rate of the cooling water used to protect the O-ring, thereby preventing the generation of dust in the process tube by condensation of the process gas by the temperature of the cooling water. It is about.
종래 기술에 따른 웨이퍼의 TEOS막 증착공정은, 약 690 - 720 ℃의 온도분포에서 진행되며, 이때 공정튜브의 표면온도가 약 200℃ 정도이므로, 석영재질인 공정튜브의 진공상태를 유지하기 위하여 사용되는 오-링이 파손되는 것을 방지하기 위해서는, 상기 공정튜브의 표면과 열교환하도록 약 500 SCCM 정도의 냉각수를 공급시키게 된다. 한편, TEOS막을 증착시키기 위한 가스는 TEOS 가스주입관을 통하여 주입되며, 그의 온도는 저장 탱크 내에서 약 85 ℃이며, 상기 가스가 이송라인을 따라 공정튜브측으로 유동되는 동안 약 90~105 ℃로 그 온도분포가 증가한다.The TEOS film deposition process of the wafer according to the prior art is carried out at a temperature distribution of about 690-720 ℃, the surface temperature of the process tube is about 200 ℃, it is used to maintain the vacuum state of the quartz process tube In order to prevent the o-ring from being damaged, about 500 SCCM of cooling water is supplied to heat exchange with the surface of the process tube. On the other hand, the gas for depositing the TEOS film is injected through the TEOS gas injection tube, the temperature thereof is about 85 ℃ in the storage tank, the temperature is about 90 ~ 105 ℃ while the gas flows along the transfer line to the process tube side The temperature distribution increases.
그러나, 상기한 바와 같은 종래의 TEOS 공정장치는, 오-링을 보호하기 위해 공급된 냉각수가 공정튜브와 열교환을 한 후에도, 공정가스를 응축시킬 정도로 공정튜브측에서 증가된 가스의 온도에 비해 상대적으로 낮게 되므로, 공정튜브의 바닥면에는 기화된 TEOS 가스가 응축되어 다량의 분진이 발생하게 되며, 이에 따라 더 이상의 공정진행이 불가능하여 공정시간의 손실이 발생되는 문제점이 있었다.However, the conventional TEOS process apparatus as described above, relative to the temperature of the gas increased on the process tube side to condense the process gas even after the supplied cooling water heat exchanged with the process tube to protect the O-ring Since it is low, the vaporized TEOS gas is condensed on the bottom surface of the process tube to generate a large amount of dust, and thus there is a problem that no further process can be carried out, resulting in a loss of process time.
따라서, 본 발명은 상기의 문제점을 해결하기 위하여 안출된 것으로서, 공정튜브의 표면온도보다 높은 내열온도를 가지는 오-링을 사용하므로써, 그를 보호하기 위한 냉각수의 유량을 최대한 감소시키고, 이로 인해 공정튜브의 표면과 열교환한 후의 냉각수 온도가 공정튜브측의 TEOS 가스 온도와 유사하게 되어 공정튜브의 바닥면에 공정가스의 분진이 발생하는 것을 억제하므로써 공정의 중단시간을 단축시키는 TEOS 공정장치를 제공하는데 그 목적이 있다.Accordingly, the present invention has been made to solve the above problems, by using an O-ring having a heat resistance temperature higher than the surface temperature of the process tube, thereby reducing the flow rate of the cooling water to protect it as much as possible, thereby The temperature of the cooling water after heat exchange with the surface of the process tube is similar to the temperature of the TEOS gas on the process tube side, thereby providing a TEOS process apparatus that shortens the downtime of the process by suppressing the generation of process gas dust on the bottom surface of the process tube. There is a purpose.
상기 목적을 달성하기 위한 본 발명은, 티이오에스(TEOS) 공정장치에 있어서, 웨이퍼 상에 티이오에스 막을 증착시키는 공정이 수행되는 공정튜브; 상기 공정튜브의 외측 소정부위를 감싸도록 위치되어, 상기 공정튜브를 공정온도로 가열시키는 히터; 상기 공정튜브의 하부에 설치되어 상기 공정튜브를 지지하고 밀봉시키는 매니폴드부; 상기 공정튜브 내에 티이오에스 가스를 주입하는 가스주입수단; 상기 공정튜브와 매니폴드부의 사이에 설치되어 상기 공정튜브를 진공상태로 유지시키되 증착공정시 상기 공정튜브의 표면온도보다 소정크기만큼 높은 내열온도를 가지는 불소고무 재질의 오-링; 및 고온화된 상기 공정튜브의 표면과 열교환하여 상기 오-링이 파손되지 않도록 소량의 냉각수를 공급하는 냉각수 주입수단을 포함하는 것을 특징으로 하는 TEOS 공정장치를 제공한다.The present invention for achieving the above object, In the TEOS (TEOS) processing apparatus, a process tube is carried out a process of depositing a TIOS film on the wafer; A heater positioned to surround an outer predetermined portion of the process tube and heating the process tube to a process temperature; A manifold unit disposed below the process tube to support and seal the process tube; Gas injection means for injecting TOS gas into the process tube; An O-ring made of fluororubber material installed between the process tube and the manifold to maintain the process tube in a vacuum state and having a heat resistance temperature higher than a surface temperature of the process tube by a predetermined size during the deposition process; And a coolant injection means for supplying a small amount of coolant so that the o-ring is not damaged by heat exchange with the surface of the process tube heated to a high temperature.
이하, 첨부된 제1도 및 제2도를 참조하여 본 발명의 구성 및 작용을 상세히 설명한다.Hereinafter, the configuration and operation of the present invention will be described in detail with reference to FIGS. 1 and 2.
제1도는 본 발명에 따른 반도체 제조공정 TEOS 증착 공정장치를 나타낸 단면도이며, 제2도는 본 발명에 따른 TEOS 증착 공정장치의 바닥부를 나타낸 부분 확대 단면도이며, 도면에서, 2는 공정튜브, 4는 매니폴드부, 6은 캡, 8은 히터, 10은 TEOS 가스 주입수단, 12는 오-링, 14는 냉각수 공급관을 각각 나타낸다.1 is a cross-sectional view showing a semiconductor manufacturing process TEOS deposition process apparatus according to the present invention, Figure 2 is a partially enlarged cross-sectional view showing a bottom portion of the TEOS deposition process apparatus according to the present invention, 2 is a process tube, 4 is a manifold The fold portion, 6 cap, 8 heater, 10 TEOS gas injection means, 12 o-ring, and 14 a cooling water supply pipe.
제1도 및 제2도에 도시된 바와 같이, 본 발명의 TEOS 증착 공정장치는, 웨이퍼 상에 TEOS 증착공정이 수행되는 석영재질의 공정튜브(2)와, 상기 공정튜브(2)의 외측에 구비되어 상기 공정튜브(2)를 증착공정이 수행될 수 있는 약 690 ~ 720℃의 온도로 가열하는 히터(8)를 구비한다. 여기서, 상기 증착공정시 상기 공정튜브(2)의 표면온도는 약 190℃ 정도이다.As shown in Figures 1 and 2, the TEOS deposition process apparatus of the present invention, the process tube 2 of the quartz material is performed on the wafer and the TEOS deposition process, the outer side of the process tube (2) It is provided with a heater (8) for heating the process tube (2) to a temperature of about 690 ~ 720 ℃ the deposition process can be performed. Here, the surface temperature of the process tube (2) in the deposition process is about 190 ℃.
또한, 본 발명은, 상기 공정튜브(2)의 하부에 구비되어 공정튜브(2)를 지지하고, 밀봉시키는 스테인레스 재질의 매니폴드(manifold)부(4)와, 상기 공정튜브(2)의 하부 일측에 설치되어, 상기 공정튜브(2) 내의 웨이퍼 상에 TEOS 막을 증착시키는 공정가스를 주입시키는 TEOS 가스주입기(10)를 더 구비한다.In addition, the present invention is provided in the lower portion of the process tube (2), the manifold (4) made of stainless steel to support and seal the process tube (2), and the lower portion of the process tube (2) It is further provided with a TEOS gas injector 10 which is installed at one side and injects a process gas for depositing a TEOS film on a wafer in the process tube 2.
그리고, 상기 공정튜브(2)와 매니폴드부(4)의 접합지점에는 오-링(12)이 삽입되어, 상기 공정튜브(2)를 진공상태로 유지시킨다. 여기서, 상기 오-링(12)은 증착공정시 공정튜브(2)의 표면온도보다 높은 약 200℃ 정도의 내열온도를 가진 바이톤(viton) 재질로 이루어진다. 한편, 상기 증착공정이 고온에서 진행되므로, 상기 TEOS 가스주입기(10)의 상측에는 냉각수 공급관(14)이 설치되어, 상기 증착공정 시의 고온에 의해 오-링(12)이 파손되는 것을 방지하기 위한 냉각수를 유입시킨다. 여기서, 상기 오-링(12)은 약 190~200℃ 정도의 내열온도를 가지므로, 냉각수를 소량 유입하여도 오-링(12)이 파손되는 것을 방지할 수 있다.In addition, an O-ring 12 is inserted at the junction point of the process tube 2 and the manifold portion 4 to maintain the process tube 2 in a vacuum state. Here, the o-ring 12 is made of a viton material having a heat resistance temperature of about 200 ° C. higher than the surface temperature of the process tube 2 during the deposition process. On the other hand, since the deposition process is performed at a high temperature, a cooling water supply pipe 14 is installed above the TEOS gas injector 10 to prevent the O-ring 12 from being damaged by the high temperature during the deposition process. Flow in the cooling water. Here, the o-ring 12 has a heat resistance temperature of about 190 ~ 200 ℃, it is possible to prevent the o-ring 12 is broken even if a small amount of cooling water flows.
이와 같은, 본 발명에 따른 TEOS 공정장치는, 냉각수를 유동시킬 경우 그에 접촉되어 있는 TEOS 가스주입기(10)의 온도가 낮아지므로, 냉각수를 차폐시키고 증착공정을 진행하는 것이 바람직하지만, 증착공정시의 고온으로 인하여 오-링(12)이 파손되는 것을 방지하기 위해서는 냉각수 공급관(14)을 통하여 냉각수를 공급시켜야 한다. 이때, 상기 오-링(12)이 약 190~200℃ 정도의 내열온도를 가지므로, 약 40~60 SCCM 정도의 냉각수를 공급하여도 오-링(12)이 파손되는 것을 방지할 수 있다. 여기서, 상기한 약 40~60 SCCM 정도의 냉각수는 공정튜브의 표면과 열과환하므로써, 공정튜브 내로 이송되는 가스를 응축시킬 수 없을 정도의 온도로 변화된다.As described above, the TEOS process apparatus according to the present invention lowers the temperature of the TEOS gas injector 10 which is in contact with the cooling water, so that the cooling water is shielded and the deposition process is performed. In order to prevent the o-ring 12 from being damaged due to the high temperature, the cooling water must be supplied through the cooling water supply pipe 14. At this time, since the O-ring 12 has a heat resistance temperature of about 190 ~ 200 ℃, it is possible to prevent the O-ring 12 from being damaged even when a cooling water of about 40 ~ 60 SCCM is supplied. Here, the cooling water of about 40 to 60 SCCM is changed to a temperature such that the gas transferred into the process tube cannot be condensed by heat exchange with the surface of the process tube.
전술한 바와 같은 본 발명의 TEOS 공정장치에 의하면, 공정튜브의 표면온도보다 다소 높은 내열온도를 가지는 오-링을 사용하므로써, 소량의 냉각수 만으로도 오-링가 파손되는 것을 방지할 수 있는 효과가 있다.According to the TEOS process apparatus of the present invention as described above, by using the O-ring having a heat resistance temperature slightly higher than the surface temperature of the process tube, there is an effect that the O-ring can be prevented from being broken by only a small amount of cooling water.
또한, 냉각수가 소량이므로 그가 공정튜브와 열교환되고 난 후에는 상기 공정가스를 응축시키지 않을 정도의 온도로 변화되어 공정튜브의 바닥면에 분진이 발생하는 것을 방지하며, 이로 인해 공정의 중단시간을 단축시키는 효과가 있다.In addition, since a small amount of cooling water is changed after the heat exchange with the process tube, it is changed to a temperature that does not condense the process gas to prevent dust from occurring on the bottom surface of the process tube, thereby reducing the downtime of the process. It is effective to let.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940016355A KR0147425B1 (en) | 1994-07-07 | 1994-07-07 | Tetra ethyl otho silicate process equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940016355A KR0147425B1 (en) | 1994-07-07 | 1994-07-07 | Tetra ethyl otho silicate process equipment |
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| Publication Number | Publication Date |
|---|---|
| KR960005785A KR960005785A (en) | 1996-02-23 |
| KR0147425B1 true KR0147425B1 (en) | 1998-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019940016355A KR0147425B1 (en) | 1994-07-07 | 1994-07-07 | Tetra ethyl otho silicate process equipment |
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| BE1017157A3 (en) | 2006-06-02 | 2008-03-04 | Flooring Ind Ltd | FLOOR COVERING, FLOOR ELEMENT AND METHOD FOR MANUFACTURING FLOOR ELEMENTS. |
| US8499521B2 (en) | 2007-11-07 | 2013-08-06 | Valinge Innovation Ab | Mechanical locking of floor panels with vertical snap folding and an installation method to connect such panels |
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| US11725395B2 (en) | 2009-09-04 | 2023-08-15 | Välinge Innovation AB | Resilient floor |
| LT2339092T (en) | 2009-12-22 | 2019-07-25 | Flooring Industries Limited, Sarl | Method for producing covering panels |
| CA3209449A1 (en) | 2010-01-11 | 2011-07-14 | Valinge Innovation Ab | Floor covering with interlocking design |
| BE1019331A5 (en) | 2010-05-10 | 2012-06-05 | Flooring Ind Ltd Sarl | FLOOR PANEL AND METHODS FOR MANUFACTURING FLOOR PANELS. |
| BE1019501A5 (en) | 2010-05-10 | 2012-08-07 | Flooring Ind Ltd Sarl | FLOOR PANEL AND METHOD FOR MANUFACTURING FLOOR PANELS. |
| CN106049804A (en) | 2011-08-29 | 2016-10-26 | 塞拉洛克创新股份有限公司 | Mechanical locking system for floor panels |
| KR102264770B1 (en) | 2013-03-25 | 2021-06-11 | 뵈린게 이노베이션 에이비이 | Floorboards provided with a mechanical locking system and a method to produce such a locking system |
| PT3169533T (en) | 2014-07-16 | 2023-06-29 | Vaelinge Innovation Ab | Method to produce a thermoplastic wear resistant foil |
| PL3186459T3 (en) | 2014-08-29 | 2019-11-29 | Vaelinge Innovation Ab | Vertical joint system for a surface covering panel |
| CA3008157C (en) | 2015-12-17 | 2023-08-22 | Valinge Innovation Ab | A method for producing a mechanical locking system for panels |
| CN109790722A (en) | 2016-09-30 | 2019-05-21 | 瓦林格创新股份有限公司 | It is assembled by vertical displacement and in the panel component both vertically as well as horizontally locked together |
| BE1025875B1 (en) | 2018-01-04 | 2019-08-06 | Unilin Bvba | Methods for manufacturing panels |
| CN111556917A (en) | 2018-01-09 | 2020-08-18 | 瓦林格创新股份有限公司 | A set of panels |
| US10801213B2 (en) | 2018-01-10 | 2020-10-13 | Valinge Innovation Ab | Subfloor joint |
| US11578495B2 (en) | 2018-12-05 | 2023-02-14 | Valinge Innovation Ab | Subfloor joint |
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