JPS6442823A - Flattening of semiconductor device surface - Google Patents
Flattening of semiconductor device surfaceInfo
- Publication number
- JPS6442823A JPS6442823A JP20019187A JP20019187A JPS6442823A JP S6442823 A JPS6442823 A JP S6442823A JP 20019187 A JP20019187 A JP 20019187A JP 20019187 A JP20019187 A JP 20019187A JP S6442823 A JPS6442823 A JP S6442823A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- projected part
- semiconductor device
- insulating film
- flattening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
Abstract
PURPOSE:To obtain a uniform, highly flattened surface in the interior of a wafer by depositing a silicon film on both a silicon insulating film and a silicon projected part, and by flattening the surface while removing the silicon projected part and the silicon layer. CONSTITUTION:A silicon layer 4 is deposited on a silicon insulating film 2 and a silicon projected part 3, both of which form the surface of a semiconductor device. The silicon projected part 3 and the silicon layer 4 are then removed to flatten the surface of the semiconductor device. A polishing process consists of two steps, the first being a lapping or grinding whose main processing is a mechanical abrasion using abrasive grains, and the second being a polishing using a chemical solution containing amine. In the second step the silicon insulating film works as a stopper against the etching process, thereby making it possible to terminate the process with an excellent overall controllability of wafers. The amine water solution has low etching effects on silicon, thereby leaving the surface of silicon free from being recessed. According to the constitution, a uniform, highly flattened surface can be obtained in the interior of a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20019187A JPS6442823A (en) | 1987-08-10 | 1987-08-10 | Flattening of semiconductor device surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20019187A JPS6442823A (en) | 1987-08-10 | 1987-08-10 | Flattening of semiconductor device surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442823A true JPS6442823A (en) | 1989-02-15 |
Family
ID=16420310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20019187A Pending JPS6442823A (en) | 1987-08-10 | 1987-08-10 | Flattening of semiconductor device surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442823A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0376118A (en) * | 1989-08-17 | 1991-04-02 | Shin Etsu Handotai Co Ltd | Manufacture of substrate for semiconductor element formation |
| EP0874390A1 (en) * | 1995-09-13 | 1998-10-28 | Hitachi, Ltd. | Grinding method of grinding device |
| US6354922B1 (en) | 1999-08-20 | 2002-03-12 | Ebara Corporation | Polishing apparatus |
| US6478977B1 (en) | 1995-09-13 | 2002-11-12 | Hitachi, Ltd. | Polishing method and apparatus |
| EP1297927A2 (en) * | 1995-09-13 | 2003-04-02 | Hitachi, Ltd. | Polishing apparatus |
| US6682408B2 (en) | 1999-03-05 | 2004-01-27 | Ebara Corporation | Polishing apparatus |
-
1987
- 1987-08-10 JP JP20019187A patent/JPS6442823A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0376118A (en) * | 1989-08-17 | 1991-04-02 | Shin Etsu Handotai Co Ltd | Manufacture of substrate for semiconductor element formation |
| EP0874390A1 (en) * | 1995-09-13 | 1998-10-28 | Hitachi, Ltd. | Grinding method of grinding device |
| US6180020B1 (en) | 1995-09-13 | 2001-01-30 | Hitachi, Ltd. | Polishing method and apparatus |
| EP0874390A4 (en) * | 1995-09-13 | 2002-02-06 | Hitachi Ltd | Grinding method of grinding device |
| US6478977B1 (en) | 1995-09-13 | 2002-11-12 | Hitachi, Ltd. | Polishing method and apparatus |
| EP1297927A2 (en) * | 1995-09-13 | 2003-04-02 | Hitachi, Ltd. | Polishing apparatus |
| US6682408B2 (en) | 1999-03-05 | 2004-01-27 | Ebara Corporation | Polishing apparatus |
| US6878044B2 (en) | 1999-03-05 | 2005-04-12 | Ebara Corporation | Polishing apparatus |
| US6354922B1 (en) | 1999-08-20 | 2002-03-12 | Ebara Corporation | Polishing apparatus |
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