JPS6428869A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6428869A
JPS6428869A JP18529587A JP18529587A JPS6428869A JP S6428869 A JPS6428869 A JP S6428869A JP 18529587 A JP18529587 A JP 18529587A JP 18529587 A JP18529587 A JP 18529587A JP S6428869 A JPS6428869 A JP S6428869A
Authority
JP
Japan
Prior art keywords
semiconductor device
ultraviolet radiation
film
constitution
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18529587A
Other languages
Japanese (ja)
Inventor
Eisuke Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18529587A priority Critical patent/JPS6428869A/en
Publication of JPS6428869A publication Critical patent/JPS6428869A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To increase the transmittance of ultraviolet radiation at the time of bit erasing, and to decrease the reflectivity, by forming an antireflection film on a silicon oxide film in a semiconductor device of ultraviolet radiation erasing type. CONSTITUTION:In a silicon substrate 1, a source drain layer 8 is formed, on the surface of which a floating gate 3, a control gate 4, and a silicon oxide film 2 are formed to make up a semiconductor device of ultraviolet radiation erasing type. In a semiconductor device having a constitution like this, an antireflection film 5 composed of a silicon nitride film or a TiO2 film is formed on the surface of the silicon oxide film 2. By making up a constitution like this, the transmittance of ultraviolet radiation can be increased at the time of bit erasing, and the reflectivity is decreased.
JP18529587A 1987-07-23 1987-07-23 Semiconductor device Pending JPS6428869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18529587A JPS6428869A (en) 1987-07-23 1987-07-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18529587A JPS6428869A (en) 1987-07-23 1987-07-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6428869A true JPS6428869A (en) 1989-01-31

Family

ID=16168360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18529587A Pending JPS6428869A (en) 1987-07-23 1987-07-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6428869A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592004A (en) * 1994-09-30 1997-01-07 Nippondenso Co., Ltd. Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries
WO2014129252A1 (en) * 2013-02-21 2014-08-28 セイコーインスツル株式会社 Ultraviolet-erasable nonvolatile semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592004A (en) * 1994-09-30 1997-01-07 Nippondenso Co., Ltd. Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries
US5877095A (en) * 1994-09-30 1999-03-02 Nippondenso Co., Ltd. Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen
WO2014129252A1 (en) * 2013-02-21 2014-08-28 セイコーインスツル株式会社 Ultraviolet-erasable nonvolatile semiconductor device
JP2014165191A (en) * 2013-02-21 2014-09-08 Seiko Instruments Inc Ultraviolet ray erasure type nonvolatile semiconductor device
CN105074887A (en) * 2013-02-21 2015-11-18 精工电子有限公司 Ultraviolet-erasable nonvolatile semiconductor device

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