JPS6418760U - - Google Patents
Info
- Publication number
- JPS6418760U JPS6418760U JP11428087U JP11428087U JPS6418760U JP S6418760 U JPS6418760 U JP S6418760U JP 11428087 U JP11428087 U JP 11428087U JP 11428087 U JP11428087 U JP 11428087U JP S6418760 U JPS6418760 U JP S6418760U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- polyimide resin
- film transistor
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229920005575 poly(amic acid) Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Description
第１図は本考案の一実施例に係るアクテイブマ
トリツクス型液晶表示装置の薄膜トランジスタ部
分の断面図、第２図は第１図の平面図、第３図ａ
〜ｃは本考案の薄膜トランジスタの一実施例に係
る製造工程を示す図、第４図ａ〜ｃは従来の薄膜
トランジスタの製造工程を示す図である。
１１……基板、１２……ゲート電極、１３……
ポリイミド樹脂膜、１４……アモルフアスシリコ
ン、１５……高濃度ｎ＋型アモルフアスシリコン
、１７……ソース電極、１８……ドレイン電極。
FIG. 1 is a sectional view of a thin film transistor portion of an active matrix liquid crystal display device according to an embodiment of the present invention, FIG. 2 is a plan view of FIG. 1, and FIG.
4A to 4C are diagrams showing the manufacturing process of an embodiment of the thin film transistor of the present invention, and FIGS. 4A to 4C are diagrams showing the manufacturing process of a conventional thin film transistor. 11...Substrate, 12...Gate electrode, 13...
Polyimide resin film, 14...amorphous silicon, 15...high concentration n + type amorphous silicon, 17...source electrode, 18...drain electrode.
補正 昭６２．１１．４
図面の簡単な説明を次のように補正する。
明細書第１２頁第１４行目に「ソース」とある
を「ドレイン」と補正する。
明細書第１２頁第１５行目に「ドレイン」とあ
るを「ソース」と補正する。Amendment November 4, 1982 The brief description of the drawing is amended as follows. On page 12, line 14 of the specification, the word "source" is corrected to read "drain." On page 12, line 15 of the specification, the word "drain" is corrected to read "source."
Claims (1)
の少なくともゲート電極上にポリイミド樹脂で形
成されたゲート絶縁膜と、このゲート絶縁膜上に
順次形成された半導体膜及びソース、ドレイン電
極とを具備することを特徴とする薄膜トランジス
タ。 (2) 前記ポリイミド樹脂膜は、ポリアミツク酸
の溶液をスピンコートにより塗布し、焼成するこ
とにより形成されていることを特徴とする実用新
案登録請求の範囲第１項記載の薄膜トランジスタ
。[Claims for Utility Model Registration] (1) A substrate on which a gate electrode is formed, a gate insulating film formed of polyimide resin on at least the gate electrode of this substrate, and a semiconductor formed in sequence on this gate insulating film. A thin film transistor comprising a film and source and drain electrodes. (2) The thin film transistor according to claim 1, wherein the polyimide resin film is formed by applying a solution of polyamic acid by spin coating and baking it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11428087U JPS6418760U (en) | 1987-07-25 | 1987-07-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11428087U JPS6418760U (en) | 1987-07-25 | 1987-07-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418760U true JPS6418760U (en) | 1989-01-30 |
Family
ID=31354880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11428087U Pending JPS6418760U (en) | 1987-07-25 | 1987-07-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418760U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6312172A (en) * | 1986-03-11 | 1988-01-19 | Kanegafuchi Chem Ind Co Ltd | Thin film transistor |
| JPS6347141A (en) * | 1986-08-14 | 1988-02-27 | 鐘淵化学工業株式会社 | Composite article including thin-film in which polyimide precursor is cyclized partially |
-
1987
- 1987-07-25 JP JP11428087U patent/JPS6418760U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6312172A (en) * | 1986-03-11 | 1988-01-19 | Kanegafuchi Chem Ind Co Ltd | Thin film transistor |
| JPS6347141A (en) * | 1986-08-14 | 1988-02-27 | 鐘淵化学工業株式会社 | Composite article including thin-film in which polyimide precursor is cyclized partially |