JPS63250178A - Manufacture of thin film semiconductor device - Google Patents
Manufacture of thin film semiconductor deviceInfo
- Publication number
- JPS63250178A JPS63250178A JP8537887A JP8537887A JPS63250178A JP S63250178 A JPS63250178 A JP S63250178A JP 8537887 A JP8537887 A JP 8537887A JP 8537887 A JP8537887 A JP 8537887A JP S63250178 A JPS63250178 A JP S63250178A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- annealing
- film
- oxygen
- recrystallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010409 thin film Substances 0.000 title claims description 3
- 238000000137 annealing Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000001953 recrystallisation Methods 0.000 abstract description 6
- 238000000206 photolithography Methods 0.000 abstract description 5
- 150000002926 oxygen Chemical class 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、地縁物上に薄膜トランジスタ（ＴＰＴ）を装
作する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of mounting a thin film transistor (TPT) on a substrate.
〔発明の１既嬰〕
本発明は、絶縁物上にＴＰＴをビームアニールにより製
作する工程において、ゲート絶縁膜堆積前に、酸素雰囲
気中でアニールをすることにより、フラントバンド電圧
（Ｖ□）を改善できるようにしたものである。[First Aspect of the Invention] In the process of fabricating TPT on an insulator by beam annealing, the present invention increases the flank band voltage (V□) by annealing in an oxygen atmosphere before depositing a gate insulating film. This is something that can be improved.
従来、ゲート絶縁ｎり堆積前に酸素雰囲気中でのアニー
ルを行わなかった。Conventionally, annealing in an oxygen atmosphere was not performed before gate insulating layer deposition.
第３図（ｂｌの！。−ｖＧ特性に示すように、従来の方
法では、Ｖ□〈ＯとなりＶ。＝Ｏｖでのリーク電流が大
きくなってしまう。As shown in the !.-vG characteristic of FIG. 3 (bl), in the conventional method, V□<O, and the leakage current at V.=Ov becomes large.
ゲート絶縁膜堆積前に、酸素雰囲気中でアニールするこ
とにより、ゲート絶縁膜と再結晶半導体膜との界面が改
善され、■、も改善される。By annealing in an oxygen atmosphere before depositing the gate insulating film, the interface between the gate insulating film and the recrystallized semiconductor film is improved, and (1) is also improved.
以下、図面によって本発明を説明する。第１図ｆａｔ〜
ｉｄ＋は、本発明の第１実施例の工程を説明するための
断面図である。The present invention will be explained below with reference to the drawings. Figure 1 fat~
id+ is a sectional view for explaining the steps of the first embodiment of the present invention.
第１図＋ａ＋は絶縁基板１上に半導体膜２を堆積し、ビ
ームエネルギー３でアニールする工程である。+a+ in FIG. 1 is a step in which a semiconductor film 2 is deposited on an insulating substrate 1 and annealed with a beam energy of 3.
絶縁基板１の例としては、石英や無アルカリガラスやア
ルカリなどの不純物を含んだガラスの表面に絶縁物をコ
ートしてガラスからの不純物の拡散を防止したものなど
がある。ここでは、５５０℃のプロセスが使用可能な無
アルカリガラス基板を使用する。次に半導体膜２の例は
、多種の膜と多数の堆積方法があるが、ここではアモル
ファスシリコン（ａ−ｓｉ）をプラズマＣＶＤ法で堆積
する方法について説明する。堆積温度は、室温から約４
００℃の間に設定し、原料ガスは主にシラン（ＳｉＨｎ
）やジシラン（ＳｉｚＨ６）又は、ジボラン（Ｂ２Ｈ２
）を０．５ｐｐｍから５ ｐｐｍ ドープしたガスを
使用する。又、膜厚は１０００人がら３０００人の間に
設定するが、ここでは２７００人にする。Examples of the insulating substrate 1 include quartz, alkali-free glass, glass containing impurities such as alkali, and the surface thereof coated with an insulating material to prevent diffusion of impurities from the glass. Here, an alkali-free glass substrate that can be used in a 550° C. process is used. Next, as an example of the semiconductor film 2, although there are many types of films and many deposition methods, a method of depositing amorphous silicon (a-si) by plasma CVD will be described here. The deposition temperature ranges from room temperature to approx.
The raw material gas is mainly silane (SiHn).
), disilane (SizH6), or diborane (B2H2
) is doped with 0.5 ppm to 5 ppm. Also, the film thickness is set between 1,000 and 3,000 people, but here it is set to 2,700 people.
次に半導体膜２をビームエネルギー３でアニー／ｌ／
スる例について説明する。アニール方法には、レーザや
電子ビーム又はランプやヒータなどを用いた多数のエネ
ルギー源があるが、ここではＡｒレーザを使用してアニ
ールする方法を述べる。Next, the semiconductor film 2 is annealed with a beam energy of 3 /l/
An example will be explained below. There are many energy sources for annealing, such as lasers, electron beams, lamps, heaters, etc., but here we will describe an annealing method using an Ar laser.
一般にプラズマＣＶＤ法により堆積したａ−ｓｉには膜
中に水素ガスが含まれているため、このガスを除去する
プレアニールを行うことで後述の再結晶アニール後の結
晶性が良くなる。プレアニール方法はａ−Ｓｉ中の水素
ガスが約５００ ゛ｃ以上で除去できることが知られて
おり、この温度以上まで上界できるアニール方法であれ
ばどの方法でも可能である。例としては真空または窒素
や不活性ガス雰囲気中で、ａ−ｓｉが／８融しない程度
のｘ ネルキー密ｒｔでＡｒレーザのビームエネルギー
３を定食させて行うことができる。又、窒素雰囲気で５
５０℃、１時間行っても十分である。°続いて再結晶ア
ニールを行う。前記プレアニールと同様に、真空または
窒素や不活性ガス雰囲気でＡｒレーザを使って、水素を
除去したａ−ｓｉが溶融するエネルギー密度でビームエ
ネルギー３を走査させる。この結果、半導体膜２は結晶
化して再結晶半導体膜２１となる。Since a-Si deposited by plasma CVD generally contains hydrogen gas in the film, performing pre-annealing to remove this gas improves the crystallinity after recrystallization annealing, which will be described later. It is known that the pre-annealing method can remove hydrogen gas in a-Si at a temperature of about 500 °C or higher, and any annealing method that can reach a temperature higher than this temperature can be used. For example, it can be carried out in a vacuum or in a nitrogen or inert gas atmosphere by using a constant beam energy of 3 of an Ar laser at x Nerky density rt such that a-si does not melt by /8. Also, in a nitrogen atmosphere,
It is sufficient to conduct the reaction at 50°C for 1 hour. ° Next, recrystallization annealing is performed. As in the pre-annealing process, an Ar laser is used in vacuum or in a nitrogen or inert gas atmosphere to scan beam energy 3 at an energy density that melts a-si from which hydrogen has been removed. As a result, the semiconductor film 2 is crystallized to become a recrystallized semiconductor film 21.
第１図ｆｂｌは、再結晶半導体膜２１上に、比抵抗Ｏ０
ＩΩｃＩ！＋以下の低抵抗半導体膜４を堆積して、ソー
スとドレイン領域の低抵抗半導体膜４のみをエツチング
で残し、ビームアニールにより活性化する工程である。FIG. 1 fbl shows a resistivity O0 on the recrystallized semiconductor film 21.
IΩcI! In this step, a low resistance semiconductor film 4 of + or less is deposited, only the low resistance semiconductor film 4 in the source and drain regions is left by etching, and activated by beam annealing.
低抵抗半導体膜４の例は、ＮチャネルＴＰＴを製作する
場合には、Ｎ型の不純物を添加して、ＰチャネルＴＰＴ
を製作する場合には、Ｐ型の不純物を添加する。ここで
はＮチャネルＴＰＴについて説明する。堆積方法は、各
種ＣＶＤ法、スパッタ法があるが、プラズマＣＶＤ法で
Ｎ゛ａ−３ｉを堆積する方法について説明する。堆積温
度は、室温から約４００℃の間で原料ガスはＳｉＨ，に
０．１％から１％のホスフィン（ＰＨＩ）を添加して、
０．０２μｍから０．１ μｍの間で堆積する。As an example of the low resistance semiconductor film 4, when manufacturing an N-channel TPT, an N-type impurity is added to form a P-channel TPT.
When manufacturing a P-type impurity, P-type impurities are added. Here, N-channel TPT will be explained. Deposition methods include various CVD methods and sputtering methods, and a method for depositing Na-3i using plasma CVD method will be described. The deposition temperature was between room temperature and about 400°C, the raw material gas was SiH, and 0.1% to 1% phosphine (PHI) was added.
Deposit between 0.02 μm and 0.1 μm.
又、Ｐ”ａ−３ｉの場合には、５ｉＨ−にジボラン（Ｂ
２Ｈ６）を添加して堆積する。次にフォトリソ技術によ
り、ソースとドレイン部分のみ残して他をエツチングし
て除去する。エツチング方法は、ドライエッチでもウェ
ットエッチでもよいが、４７ノ化メタン（ＣＦ、）と酸
素（０２）との混合ガスによるプラズマエッチで容易に
できる。次にビームエネルギー３で低抵抗半導体膜４を
活性化し、より低抵抗化して、コンタクトを良好にする
。In addition, in the case of P”a-3i, diborane (B
2H6) is added and deposited. Next, using photolithography, only the source and drain portions are left and the rest is etched away. The etching method may be dry etching or wet etching, but plasma etching using a mixed gas of 47-methane (CF) and oxygen (02) can easily be used. Next, the low-resistance semiconductor film 4 is activated with beam energy 3 to lower the resistance and improve contact.
第１図（Ｃ）゛は、フォトリソ技術により再結晶半導体
膜２１をエツチングして素子分離を行い、酸素５雰囲気
中でアニールを行う工程である。エツチング例は、前述
のプラズマエツチングにより容易にできる。酸素アニー
ルは４００℃〜６００℃で３０分以上行えばよく、−例
としては５５０℃で１時間アニールすれば十分である。FIG. 1C shows a step in which the recrystallized semiconductor film 21 is etched by photolithography to separate elements, and then annealed in an oxygen 5 atmosphere. An example of etching can be easily performed by the plasma etching described above. Oxygen annealing may be performed at 400° C. to 600° C. for 30 minutes or more; for example, annealing at 550° C. for 1 hour is sufficient.
この酸素アニールにより、再結晶半導体膜２１のチャネ
ル部表面が薄く酸化されて、チャネル部の界面が改善さ
れる。By this oxygen annealing, the surface of the channel portion of the recrystallized semiconductor film 21 is thinly oxidized, and the interface of the channel portion is improved.
第１図（ｄｌは、ゲート絶縁膜６を堆積し、ソースとド
レインのコンタクトホールをフォトリソ技術で形成した
後、ゲート電極７．ソース電極８．ドレイン電極９を形
成する工程である。ゲート絶縁膜６は、各種ＣＶＤ法、
スパッタ法なとで、シリコ７Ｈ化膜（ＳｉＯｘ）やシリ
コン窒化１１！２（ＳｉＮｘ）などが堆積できる。ここ
では、ＳｉＯｘをプラズマＣＶＤ法で堆積する方法にフ
いて説明する。堆積温度は室温から３００°Ｃの間で、
原料ガスは５ｉＨａとＮ、Ｏを主に使う。膜厚は、５０
０人から３０００人の間で堆積する。堆積後、窒素雰囲
気中で５５０℃、１時間のアニールを行い、ゲート絶縁
膜の膜質を向上させる。次にソースとドレイン部分のコ
ンタクトホールは、フォトリソ技術により形成した後、
ゲート電極７．ソース電極８．ドレイン電極９を堆積す
る。堆積方法は、スパッタや蒸着法があり、材料もＡｆ
ｆ−３ｉ、Ｍｏ−３ｉ。FIG. 1 (dl) is the step of depositing a gate insulating film 6, forming source and drain contact holes by photolithography, and then forming a gate electrode 7, a source electrode 8, and a drain electrode 9.Gate insulating film 6 is various CVD methods,
A silicon 7H film (SiOx), silicon nitride 11!2 (SiNx), etc. can be deposited by sputtering. Here, a method of depositing SiOx by plasma CVD will be explained. The deposition temperature was between room temperature and 300°C.
The raw material gases mainly used are 5iHa, N, and O. The film thickness is 50
It accumulates between 0 and 3000 people. After deposition, annealing is performed at 550° C. for 1 hour in a nitrogen atmosphere to improve the film quality of the gate insulating film. Next, contact holes for the source and drain portions are formed using photolithography, and then
Gate electrode7. Source electrode8. A drain electrode 9 is deposited. Deposition methods include sputtering and vapor deposition, and materials include Af.
f-3i, Mo-3i.
Ｗ−３ｉなどの金属シリサイドがあ、る。−例としては
、マグネトロンスパッタ法で八〇−３ｔを０゜５μｍか
ら１μｍで堆積する。Metal silicides such as W-3i are hot. - As an example, 80-3t is deposited with a thickness of 0.5 to 1 μm by magnetron sputtering.
第３図１ａｌ〜（ｄ）は、本発明の第２実施例の工程を
示す断面図である。第１実施例との違いは、ソース止ド
レインの低ＪＴＩ抗りｊ域４１をイオン注入で製作する
点である。−例としては、ＮチャネルＴ Ｆ Ｔを製作
する場合に、第２図（ｂ）に示すようにリン（Ｐ）のイ
オン注入により、低抵抗領域４１を形成する。他の工程
は、第１実施例と同じであるつＣ発明の効果〕
本発明は、ゲート絶縁Ｉｌり６を堆積する前に、酸素ア
ニールを行うことにより、チャネル部の界面が改善され
る。その効果は、第３図１ａｌ、 ｆｂｌに示すＴＦＴ
のｒ’、−ｖ、特性かられかる。第３図ｆｂ）は、酸素
アニールを行わない従来の方法で、ｖ、ｆｉ＜。FIGS. 3A to 3D are cross-sectional views showing the steps of the second embodiment of the present invention. The difference from the first embodiment is that the low JTI resistance region 41 of the source stop and drain is manufactured by ion implantation. - For example, when manufacturing an N-channel TFT, a low resistance region 41 is formed by ion implantation of phosphorus (P) as shown in FIG. 2(b). Other steps are the same as in the first embodiment. Effects of the Invention In the present invention, oxygen annealing is performed before depositing the gate insulating layer 6, thereby improving the interface of the channel portion. The effect is shown in the TFT shown in Fig. 3 1al and fbl.
It is determined from the r', -v, characteristics of. FIG. 3 fb) shows the conventional method without oxygen annealing, where v, fi <.
となって、Ｖｃ＝０でのＩＤが１０−’八と大きくなっ
ている。酸素アニールを行った木兇明の工程による特性
は第３図（ａｌに示すようにｖＦ、ｌ＜Ｏとなり、■、
＝０での【Ｄが１０−目へと小さくなり、良い特性を示
している。Therefore, the ID at Vc=0 is as large as 10-'8. The characteristics due to the process of Mokukai that performed oxygen annealing are shown in Figure 3 (al), where vF, l<O, and ■,
[D] at =0 becomes smaller to 10-th, indicating good characteristics.
第ｔｄ（ａ＋〜（ｄ＋は本発明の第１実施例の工程を示
す断面図、第２図（８）〜（ｄ＋は本発明の第２実施例
の工程を示す断面図、第３図１ａｌ、 （ｂｌは本発明
と従来の工程によるＴＰＴの特性を説明するための図面
である。
１・・・絶縁基板
２・・・半導体膜
３・・・ビームエネルギー
４・・・低抵抗半導体膜
５・・・酸素
６ ・ ・ ・ゲート１色縁膜
７・・・ゲート電極
８・・・ソース電極
９・・・ドレイン電極
２１・・・再結晶半導体膜
４１・・・低抵抗領域
以上
出願人 セイコー電子工業株式会社
代理人 弁理士 最 上 ′！ｊｊ（他１名）−−
■ト
↓ ↓ ト３し゛−ムエ子ルキ゛′−
茅２ 図
＜ａ）ｉ−茫明１こよる特４生の１先組図恨作した千Ｆ
丁（７）ＩＣ）−Ｖ（を燗ト）亜区第３図td(a+ to (d+ is a sectional view showing the steps of the first embodiment of the present invention, FIG. 2 (8) to (d+ is a sectional view showing the steps of the second embodiment of the present invention, FIG. 3 1al , (bl is a drawing for explaining the characteristics of TPT according to the present invention and a conventional process. 1... Insulating substrate 2... Semiconductor film 3... Beam energy 4... Low resistance semiconductor film 5 ...Oxygen 6 ...Gate 1 color border film 7 ...Gate electrode 8 ...Source electrode 9 ...Drain electrode 21 ...Recrystallized semiconductor film 41 ...Low resistance region and above Applicant Seiko Representative of Denshi Kogyo Co., Ltd. Patent attorney Mogami ′!jj (1 other person) --
■T↓ ↓
Kaya 2 Diagram <a) i-Sakumei 1 Koyoru Special 4th student's 1st group picture made by SenF
Ding (7) IC)-V (warm) sub-section Figure 3
Claims (1)
。 （ａ）絶縁基板上に、非晶質または多結晶の半導体膜を
堆積した後、ビームエネルギーで前記半導体膜をアニー
ルして、再結晶半導体膜にする工程。 （ｂ）前記再結晶半導体膜上に、比抵抗０．１Ωｃｍ以
下の低抵抗半導体膜を堆積して、ソースとドレイン領域
のみ残して、他をエッチングした後、ビームエネルギー
により、前記低抵抗半導体膜を活性化して、さらに低抵
抗にする工程。 （ｃ）素子を分離するために、前記再結晶半導体膜を島
状にエッチングして、酸素雰囲気中で４００℃〜６００
℃で３０分以上アニールする工程。 （ｄ）前記酸素アニール後、ゲート絶縁膜を堆積した後
、ソースとドレイン領域に、コンタクトホールを形成し
て、ゲート電極、ソース電極、ドレイン電極を製作する
工程。[Scope of Claims] A method for manufacturing a thin film semiconductor device comprising the following (a) to (d). (a) A step of depositing an amorphous or polycrystalline semiconductor film on an insulating substrate and then annealing the semiconductor film with beam energy to form a recrystallized semiconductor film. (b) After depositing a low-resistance semiconductor film with a specific resistance of 0.1 Ωcm or less on the recrystallized semiconductor film and etching the rest while leaving only the source and drain regions, the low-resistance semiconductor film is etched with beam energy. The process of activating and making the resistance even lower. (c) In order to separate the elements, the recrystallized semiconductor film is etched into islands at 400°C to 600°C in an oxygen atmosphere.
Annealing process at ℃ for 30 minutes or more. (d) After the oxygen annealing, a gate insulating film is deposited, and then contact holes are formed in the source and drain regions to produce a gate electrode, a source electrode, and a drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8537887A JPS63250178A (en) | 1987-04-07 | 1987-04-07 | Manufacture of thin film semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8537887A JPS63250178A (en) | 1987-04-07 | 1987-04-07 | Manufacture of thin film semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63250178A true JPS63250178A (en) | 1988-10-18 |
Family
ID=13857064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8537887A Pending JPS63250178A (en) | 1987-04-07 | 1987-04-07 | Manufacture of thin film semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63250178A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02234418A (en) * | 1989-03-07 | 1990-09-17 | Nec Corp | Manufacture of epitaxial wafer |
| US6329229B1 (en) | 1993-11-05 | 2001-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| US6352883B1 (en) | 1991-02-22 | 2002-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6458200B1 (en) | 1990-06-01 | 2002-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin-film transistor |
| US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
-
1987
- 1987-04-07 JP JP8537887A patent/JPS63250178A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02234418A (en) * | 1989-03-07 | 1990-09-17 | Nec Corp | Manufacture of epitaxial wafer |
| US6458200B1 (en) | 1990-06-01 | 2002-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin-film transistor |
| US6740547B2 (en) | 1990-06-01 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin-film transistor |
| US7018874B2 (en) | 1990-06-01 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin-film transistor |
| US6352883B1 (en) | 1991-02-22 | 2002-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6717180B2 (en) | 1991-02-22 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6329229B1 (en) | 1993-11-05 | 2001-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
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