JPS63157419A - 微細パタ−ン転写装置 - Google Patents

微細パタ−ン転写装置

Info

Publication number
JPS63157419A
JPS63157419A JP61303987A JP30398786A JPS63157419A JP S63157419 A JPS63157419 A JP S63157419A JP 61303987 A JP61303987 A JP 61303987A JP 30398786 A JP30398786 A JP 30398786A JP S63157419 A JPS63157419 A JP S63157419A
Authority
JP
Japan
Prior art keywords
liquid
refraction index
specimen
light
bellows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61303987A
Other languages
English (en)
Inventor
Mamoru Nakasuji
護 中筋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61303987A priority Critical patent/JPS63157419A/ja
Publication of JPS63157419A publication Critical patent/JPS63157419A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) この発明はサブミクロンパターンをウェーハ等の試料に
形成する微細パターン転写装置に関する。
(従来の技術) 従来、光を用いて微細パターンを転写する場合回折によ
る限界があるため、開口を大きくするとか、短波長の光
を用いる等の工夫が行われているが十分とは言えないの
が現状である。
(発明が解決しようとする問題点〕 本発明はこのような事情に鑑みなされたもので。
回折による光のボケを低減した微細パターン転写装置を
提供することを目的とする。
〔発明の構成〕
(問題点を解決するための手段) 従来、顕微鏡の対物レンズと試料間にオイル等の液体を
満たせば高解像になることは知られている。この原理を
ステッパーあるいはアライナに応用する。この時問題1
こなるのは、顕微鏡と異なり試料は大きく視野もLow
角程度と大きく且つ試料とレンズ間の距離が大きいので
液体をレンズと試料間に如何にして保持するかが問題と
なる。さらにステッパーの場合、試料をステップアンド
リピートさせる必要がありこの対策も必要である。
本発明では高屈折率の液体を用い回折を小さくし、0リ
ングとベローズで光の通る空間を密閉し液体を充満可能
にし、ベローズでレンズど試料が動く余裕を作った。
(作用) 本発明に於いて1例えば屈折率が1.5の液体を用いれ
ば波長が1 / 1.5になり、回折が1 / 1.5
にな名ので1例えば0.5μmの解像度を持つ光学系を
用いれば0.33μmに解像度を上げることができる。
(実施例) 本発明の一実施例による微細パターンの転写装置の構造
を第1図に示す。光学系の鏡筒1の外部にはベローズ3
が取付けられ、光が通る空間と外部は遮断されている。
ベローズの内部11には高で、外部へ漏れないようシー
ルされている。レンズ2は試料6との間の空間の屈折率
が液体のそれに合うよう設計されている。試料はチャッ
ク板7によってフラットに固定され%0リングは締め具
5で押えられている。試料はステージ8によってx、y
方向に移動できる。転写が完了すると、パージ装置10
が作動して液体を追出し、ウェーハが交換される。その
後液体供給装置9が作動し、て液体を充満させた後転写
が行われる。
〔発明の効果〕
本発明によれば次の効果を奏する。
(1)  液体の屈折率をnとすると0倍の解像力が得
られる。
(2)ベローズでシールされているためxy方向に移動
が可能である。
(3)高速で液体をパージしたり、供給したりする装置
を持つのでスループットが落ちない。
【図面の簡単な説明】
第1図は本発明による転写装置の一実施例の主要部を示
す断面図である。 1・・・光学鏡筒、2・・・最終レンズ、3・・・ベロ
ーズ。 4・・・0リング、5・・・0リング押え金具、6・・
・試料ウェーハ、7・・・チャック板、8・・・xyス
テージ。 9・・・液体供給装置、10・・・液体パージ装置。

Claims (3)

    【特許請求の範囲】
  1. (1)光あるいは紫外線で試料上に微細パターンを転写
    する装置において、最終レンズと試料間の光の通路を液
    体で満したことを特徴とする微細パターン転写装置。
  2. (2)レンズと試料間の空間に液体を高速で充満させあ
    るいは高速でパージさせる装置を備えたことを特徴とす
    る特許請求の範囲第1項記載の微細パターン転写装置。
  3. (3)ベローズ及びOリングで光の通路を含む空間を密
    閉できることを特徴とする特許請求の範囲第1項記載の
    微細パターン転写装置。
JP61303987A 1986-12-22 1986-12-22 微細パタ−ン転写装置 Pending JPS63157419A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61303987A JPS63157419A (ja) 1986-12-22 1986-12-22 微細パタ−ン転写装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61303987A JPS63157419A (ja) 1986-12-22 1986-12-22 微細パタ−ン転写装置

Publications (1)

Publication Number Publication Date
JPS63157419A true JPS63157419A (ja) 1988-06-30

Family

ID=17927677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61303987A Pending JPS63157419A (ja) 1986-12-22 1986-12-22 微細パタ−ン転写装置

Country Status (1)

Country Link
JP (1) JPS63157419A (ja)

Cited By (252)

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WO2000074120A1 (fr) * 1999-05-28 2000-12-07 Nikon Corporation Procede et appareil d'exposition
WO2004053956A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及び露光方法、デバイス製造方法
WO2004053953A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
WO2004053955A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
WO2004053954A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
JP2004207711A (ja) * 2002-12-10 2004-07-22 Nikon Corp 露光装置及び露光方法、デバイス製造方法
WO2004102646A1 (ja) * 2003-05-15 2004-11-25 Nikon Corporation 露光装置及びデバイス製造方法
WO2005024921A1 (ja) * 2003-09-03 2005-03-17 Nikon Corporation 露光装置及びデバイス製造方法
JP2005101488A (ja) * 2002-12-10 2005-04-14 Nikon Corp 露光装置及び露光方法、デバイス製造方法
EP1528433A3 (en) * 2003-10-28 2005-05-18 ASML Netherlands B.V. Lithographic apparatus
WO2005015315A3 (de) * 2003-07-24 2005-09-09 Zeiss Carl Smt Ag Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum
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