JPS63152197A - Method of baking ceramic substrate - Google Patents
Method of baking ceramic substrateInfo
- Publication number
- JPS63152197A JPS63152197A JP29881186A JP29881186A JPS63152197A JP S63152197 A JPS63152197 A JP S63152197A JP 29881186 A JP29881186 A JP 29881186A JP 29881186 A JP29881186 A JP 29881186A JP S63152197 A JPS63152197 A JP S63152197A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- substrate
- ceramic substrate
- firing
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims description 32
- 239000000919 ceramic Substances 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 238000010304 firing Methods 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000007606 doctor blade method Methods 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002114 biscuit porcelain Inorganic materials 0.000 description 1
- 239000003738 black carbon Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
Landscapes
- Porous Artificial Stone Or Porous Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はセラミック基板、特に設計値どおり精度良く調
整されたセラミック基板にして、表面平滑でうねりや反
りの発生しないセラミック多層基板又はセラミック基板
を得ることを目的とするものである。Detailed Description of the Invention (Field of Industrial Application) The present invention is a ceramic substrate, particularly a ceramic multilayer substrate or a ceramic substrate with a smooth surface and no waviness or warpage, which is precisely adjusted according to design values. The purpose is to obtain.
(従来の技術)
近時導体集積回路素子の高集積化に伴い、素子の大型化
及び外部との接Vt端子の増加、微細化の傾向が大きく
、これに応じて半導体素子搭載用配線板としてもセラミ
ック多N基板の使用が盛んになってきている。(Prior art) With the recent increase in the degree of integration of conductor integrated circuit devices, there is a strong trend toward larger devices, an increase in the number of Vt terminals connected to the outside, and miniaturization. Also, the use of ceramic multi-N substrates has become popular.
このセラミック多層基板はバイアホール処理、スクリー
ン印刷による配線形成を施した多数のセラミック生シー
ト(焼結前のセラミック扮成形体)を重ね合わせて一括
焼結することによって製造されていた。This ceramic multilayer board was manufactured by stacking a large number of raw ceramic sheets (ceramic molded bodies before sintering) that had been subjected to via hole processing and wiring formation by screen printing, and sintering them all at once.
(発明が解決しようとする問題点)
このようなセラミック基板は樹脂を用いたプリント基板
より実装密度が大きいものが得られるが、Vε結による
収縮が大きいので、表面の平坦性が不十分で、基板の精
度寸法にバラツキが大きく、製造過程で反りを生じるこ
とが通例で、平面研磨により反りやうねりを修正したり
、平面研磨した耐火物平板を用いて基板に荷重をかけて
再焼成する等の繁雑な修正の手数を要することが多かっ
た。(Problems to be Solved by the Invention) Although such a ceramic board can have a higher mounting density than a printed circuit board using resin, the shrinkage due to Vε bonding is large, so the surface flatness is insufficient. There is a large variation in the precision dimensions of the board, and it is common for warpage to occur during the manufacturing process, so the warp or waviness is corrected by surface polishing, or a load is applied to the board using a flat surface polished refractory plate and re-fired. This often required complicated corrections.
(問題点を解決するための手段)
本発明は、上記の如き問題点を解決するために鋭意検討
の結果なされたもので、その概要は気孔率5〜20%、
厚み21〜31の表面平滑なカーボン板と、これと同じ
かやや薄いセラミック生成形基板とを、交互に積上げて
、H2またはNt’B囲気中で約1500℃(およそ1
480〜1560℃)で焼成するセラミック基板の製造
方法である。而してセラミック生成形基板として最も好
ましいものは、ドクターブレード法によって成形され、
樹脂抜きを大気中で200℃、lO時間〜20時間ベー
キングすることによって得られる。(Means for solving the problems) The present invention was made as a result of intensive studies to solve the above problems, and its outline is as follows: porosity is 5 to 20%,
Smooth-surface carbon plates with a thickness of 21 to 31 mm and ceramic-formed substrates of the same thickness or slightly thinner are stacked alternately and heated at approximately 1500°C (approximately 1
This is a method for manufacturing a ceramic substrate in which firing is performed at a temperature of 480 to 1560°C. The most preferable ceramic forming substrate is formed by the doctor blade method.
It is obtained by baking the resin-removed product in the atmosphere at 200° C. for 10 hours to 20 hours.
(作用)
本発明に於いて用いられているカーボン板は非常に摩擦
抵抗が少なく、表面加工も簡単に平滑性を求めることが
できる。このことはセラミックや金属では摩擦抵抗が高
く、しかも表面平滑加工も簡単には出来ないのに比べて
大いに有利である。(Function) The carbon plate used in the present invention has very little frictional resistance, and the surface can be easily processed to obtain smoothness. This is a great advantage compared to ceramics and metals, which have high frictional resistance and cannot be easily processed to have a smooth surface.
即ち、セラミックの生シート成形法について言及すれば
、原料と分散剤と溶剤とを混合し粉砕後回塑剤とバイン
ダーを加えて混合、粉砕した後シートに成形し乾燥する
ことによって製造されるが、平滑で均一な加工をするこ
とが困難であった。しかるに本発明ではカーボン板を併
用しており、カーボン板の平滑性と摩擦抵抗の小さいこ
とを利用するものである。In other words, regarding the method of forming green ceramic sheets, it is manufactured by mixing raw materials, a dispersant, and a solvent, and after pulverizing, adding a plasticizer and a binder, mixing, pulverizing, forming into a sheet, and drying. , it was difficult to process it smoothly and uniformly. However, in the present invention, a carbon plate is also used, and the smoothness and low frictional resistance of the carbon plate are utilized.
なお、セラミックの体成形基板が焼成前に於いて樹脂(
バインダー)抜きを200℃、211r程度大気中で行
なうが、樹脂が完全には抜ききれていないので、気孔率
の少ないカーボン板と重ね合わせて焼成することにより
、カーボンにより還元されて基板中にカーボンの分子が
残留し、黒色を呈することがあり得るが、本発明で用い
るカーボン板は気孔率が5〜20%程度であるので、カ
ーボン分子の残留が少なくなるよう焼成できるので好ま
しい。即ち、気孔率5%未満のものは製造が困難であり
、気孔率20%を越えたものはカーボン板の強度が小さ
く、繰り返しの使用に不都合であるので好ましくない。It should be noted that the ceramic body molded substrate is coated with resin (
Binder) is removed in the atmosphere at 200°C and 211r, but the resin is not completely removed, so by stacking it on a carbon plate with low porosity and firing it, it is reduced by the carbon and carbon is deposited in the substrate. However, since the carbon plate used in the present invention has a porosity of about 5 to 20%, it can be fired so that fewer carbon molecules remain. That is, carbon plates with a porosity of less than 5% are difficult to manufacture, and carbon plates with a porosity of more than 20% are undesirable because they have low strength and are inconvenient for repeated use.
また、カーボン板を併用することにより摩擦が小さいこ
とは、基板が焼成されるときに、収縮が比較的容易に行
なわれ、焼上げの寸法に影響が少なく、要求通りの公差
の寸法を確保することができる。In addition, the low friction caused by the combined use of carbon plates means that when the substrate is fired, it shrinks relatively easily, which has little effect on the dimensions of the fired product, ensuring dimensions with the required tolerance. be able to.
本発明ではカーボン板の厚みを2〜3龍としているが、
その理由は必要以上に大きい荷重がセラミック基板の収
縮に影響し、寸法精度が悪くなるために、上記厚みのも
のとし、荷重をコントロールするようにしたものである
。又カーボン板の厚みをセラミック生成形基板より厚く
するのはカーボン板のハンドリングによる破)員防止と
、使用回数を増すための手段である。In the present invention, the thickness of the carbon plate is 2 to 3 mm,
The reason for this is that an unnecessarily large load would affect the shrinkage of the ceramic substrate, resulting in poor dimensional accuracy, so the above thickness was used and the load was controlled. The reason why the thickness of the carbon plate is made thicker than that of the ceramic molded substrate is to prevent the carbon plate from breaking during handling and to increase the number of times of use.
(実施例) セラミック基板として下記の3種の基板を用意した。(Example) The following three types of substrates were prepared as ceramic substrates.
A:アルミナ含有量95%、−殻厚膜用の大気中で焼き
上げされた表面粗さ0.3〜0.5μRaの基板
B:アルミナ含有量97%、−殻厚膜、薄膜用読上げさ
れた表面粗さ0.2〜0.4 μRaの基板C:アルミ
ナ含有ff199.5%、薄膜用読上げされた表面粗さ
O,OS〜0.08μRaの基板上記の3種の基板をそ
れぞれ第11kに示すようにダイヤモンドで表面研磨さ
れたセラミック耐火物センター6の上に乗せて、大気中
で八は1480℃、Bは1500℃、Cは1520℃の
各温度で焼成した。なお、この際、各基板には表面に3
0μ〜50μ程度の球状目砂7を均一に塗布して、それ
ぞれの基板を5枚積み重ねて焼成した。セラミック塞板
は上よりla、 2a、3a、 4a及び5aで示しで
ある。基板ナイズは55mm X 65+wm X Q
、8mff1で、その反りとうねりの測定結果は以下の
とおりである。A: Alumina content 95%, -Substrate with surface roughness 0.3-0.5 μRa baked in the atmosphere for thick shell films B: Alumina content 97%, - Read out for thick shell films and thin films. Substrate C with a surface roughness of 0.2 to 0.4 μRa: alumina containing ff 199.5%, a substrate with a surface roughness of O, OS ~ 0.08 μRa read out for thin films. As shown, it was placed on a ceramic refractory center 6 whose surface had been polished with diamond, and fired in the air at a temperature of 1480° C. for No. 8, 1500° C. for No. 150 C, and 1520° C. for No. C. At this time, each board has 3
Spherical grain sand 7 of approximately 0 μm to 50 μm was uniformly applied, and five of each substrate was stacked and fired. The ceramic plugging plates are designated la, 2a, 3a, 4a, and 5a from the top. Board size is 55mm x 65+wm x Q
, 8mff1, and the measurement results of warpage and waviness are as follows.
これに対し本発明の方法により、前記A、B、Cを用い
第2図に示すように気孔率18%のカーボン板8を上下
面及び中間に配置し、1it(io%、N。On the other hand, according to the method of the present invention, carbon plates 8 with a porosity of 18% are arranged on the upper and lower surfaces and in the middle using the above-mentioned materials A, B, and C, as shown in FIG.
40%の混合ガス中でΔは1450℃、Bは1490℃
、Cは1500℃で焼成した。カーボン板のサイズは6
0IIII11×7011II*×311IInであり
、セラミック基板のサイズは55mmX65mmX0.
8mm テアルm 又、セラミック基板は上よりlb、
2b、3b、4b及び5bとして示されている。その
反りとうねりの測定結果は以下のとおりである。Δ is 1450℃ and B is 1490℃ in 40% mixed gas
, C was fired at 1500°C. Carbon plate size is 6
0III11×7011II*×311IIn, and the size of the ceramic substrate is 55mmX65mmX0.
8mm Teal m Also, the ceramic substrate is lb from the top,
Shown as 2b, 3b, 4b and 5b. The measurement results of warpage and waviness are as follows.
なお、以上の基板にはやや黒色のカーボン分子が付着し
たため1000℃大気中にて素焼を行い、電気特性と表
面粗さを測定した結果、電気特性は大気中で焼成したも
のと差はなかった。In addition, since slightly black carbon molecules were attached to the above substrate, bisque firing was performed in the air at 1000℃, and the electrical properties and surface roughness were measured. As a result, the electrical properties were no different from those fired in the air. .
備考二前記反りとうねりは下記の定義によるものである
。Note 2: The above warpage and waviness are defined as below.
(1)反り;第3図に示すように各段の基板の中心部に
対し端部の離隅「口離(ms )(2)うねり:第4図
に示すように各段の基板の30IIIIIl長当たりの
偏位量(μm)次に本発明による積層基板と比較例によ
る積層基板とについて電気特性及び表面粗さを測定した
ところ下表に示すとおりの結果を得た。(1) Warpage: As shown in Figure 3, the distance between the edges of the board from the center of each stage (ms) (2) Waviness: As shown in Figure 4, 30III Amount of deviation per length (μm) Next, the electrical properties and surface roughness of the laminated substrate according to the present invention and the laminated substrate according to the comparative example were measured, and the results shown in the table below were obtained.
(発明の効果)
本発明によるときは、基板にうねりや反りが極めて少な
い表面平滑な基板が得られ、従来行っていたような平面
研磨によりうねりや反りの修正の必要がなくなり、又、
耐火物平板を平面研磨してその耐火物に使い込み荷重を
かけて再焼成する必要がなくなった。(Effects of the Invention) According to the present invention, a substrate with a smooth surface with extremely little waviness or warpage can be obtained, and there is no need to correct the waviness or warp by surface polishing, which was conventionally done.
There is no longer a need to flatten a refractory flat plate, apply a load to the refractory, and re-fire it.
第1図は従来例によるセラミック基板の焼成用セットの
構造例を示す縦断面口、第2図は本発明によるセラミッ
ク基板の焼成用セットの構造例を示す縦断面図、第3図
は反りの測定法を示す説明図、第4Mはうねりの測定法
を示す説明図である。
lb、2b、3b、4b、5b :セラミック基板、8
:カーボン板FIG. 1 is a vertical cross-sectional view showing an example of the structure of a conventional ceramic substrate firing set, FIG. 2 is a vertical cross-sectional view showing a structural example of a ceramic substrate firing set according to the present invention, and FIG. 4M is an explanatory diagram showing a method of measuring waviness; FIG. lb, 2b, 3b, 4b, 5b: ceramic substrate, 8
:Carbon plate
Claims (2)
旦なカーボン板と、これと同じかやや薄いセラミック生
成形基板とを交互に積上げて、H_2またはN_2雰囲
気中で約1500℃にて焼成することを特徴とするセラ
ミック基板の焼成方法。(1) Carbon plates with a flat surface with a porosity of 5 to 20% and a thickness of 2 mm to 3 mm and ceramic substrates that are the same or slightly thinner are stacked alternately and heated at approximately 1500°C in an H_2 or N_2 atmosphere. A method for firing a ceramic substrate, characterized by firing.
よって成形され、樹脂抜きを大気中で200℃、10時
間〜20時間ベーキングすることによって行なわれたも
のからなる特許請求の範囲第1項記載のセラミック基板
の焼成方法。(2) The ceramic molded substrate is a ceramic according to claim 1, which is formed by a doctor blade method, and the resin removal is performed by baking at 200°C in the atmosphere for 10 to 20 hours. Method of firing the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29881186A JPH0632349B2 (en) | 1986-12-17 | 1986-12-17 | Baking method of ceramic substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29881186A JPH0632349B2 (en) | 1986-12-17 | 1986-12-17 | Baking method of ceramic substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63152197A true JPS63152197A (en) | 1988-06-24 |
JPH0632349B2 JPH0632349B2 (en) | 1994-04-27 |
Family
ID=17864527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29881186A Expired - Lifetime JPH0632349B2 (en) | 1986-12-17 | 1986-12-17 | Baking method of ceramic substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0632349B2 (en) |
-
1986
- 1986-12-17 JP JP29881186A patent/JPH0632349B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0632349B2 (en) | 1994-04-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |