JPS6251504B2 - - Google Patents

Info

Publication number
JPS6251504B2
JPS6251504B2 JP56168434A JP16843481A JPS6251504B2 JP S6251504 B2 JPS6251504 B2 JP S6251504B2 JP 56168434 A JP56168434 A JP 56168434A JP 16843481 A JP16843481 A JP 16843481A JP S6251504 B2 JPS6251504 B2 JP S6251504B2
Authority
JP
Japan
Prior art keywords
color
layer
image sensor
dyed
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56168434A
Other languages
Japanese (ja)
Other versions
JPS5868970A (en
Inventor
Kazufumi Ogawa
Shiro Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56168434A priority Critical patent/JPS5868970A/en
Publication of JPS5868970A publication Critical patent/JPS5868970A/en
Publication of JPS6251504B2 publication Critical patent/JPS6251504B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)

Description

【発明の詳細な説明】 本発明は固体撮像素子の受光面上にカラーフイ
ルタを一体的に形成したカラー固体撮像素子の製
造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a color solid-state image sensor in which a color filter is integrally formed on the light-receiving surface of the solid-state image sensor.

現在CCD型又はMOS型等の電荷転送素子を用
いた固体撮像素子においては、その撮像素子の受
光面上にカラーフイルタを一体的に形成してカラ
ー固体撮像素子を製造することが試みられてい
る。
Currently, in solid-state image sensors using charge transfer devices such as CCD type or MOS type, attempts are being made to manufacture color solid-state image sensors by integrally forming color filters on the light-receiving surface of the image sensor. .

しかし、撮像素子の受光面上にカラーフイルタ
を一体的に形成する場合には次のような欠点があ
つた。例えば撮像素子が形成されたデバイス上に
その電極引出し端子及び切断部を除く部分全面に
一様の厚さの被染色層、例えばゼラチン層を被着
形成し、このゼラチン層をホトレジスト層で選択
的にマスクして染め分け、撮像素子上に直接色フ
イルタを形成するようにしていたがこの場合ホト
レジストによる染色用マスクの位置ずれ等で混色
(にじみ)が生じ、カラーフイルタ特性が劣化す
ること、また受光部の凹部と周辺との段差のため
に全面一様な被染色層を被着形成するときに、そ
の段部において段切れあるいはクラツク等が生じ
これが原因で被染色層に局部的な膨潤あるいは剥
れが生ずること等の欠点があつた。
However, when a color filter is integrally formed on the light-receiving surface of an image sensor, there are the following drawbacks. For example, a layer to be dyed, such as a gelatin layer, is formed to have a uniform thickness over the entire surface of the device, excluding the electrode lead terminals and the cut portion, on a device on which an image sensor is formed, and this gelatin layer is selectively coated with a photoresist layer. In the past, a color filter was formed directly on the image sensor by dyeing it separately using a mask, but in this case, color mixing (bleeding) occurred due to misalignment of the dyeing mask using photoresist, which deteriorated the color filter characteristics, and the light receiving Due to the difference in level between the concave part and the surrounding area, when a uniform layer to be dyed is deposited on the entire surface, breakage or cracks may occur in the step part, which may cause local swelling or peeling of the layer to be dyed. There were drawbacks such as the occurrence of cracks.

一方上記方法によるカラー固体撮像素子の製造
方法と全く別の製造方法もある。このカラー固体
撮像素子の製造方法を第1図A〜Eにもとづいて
説明すると、まず、絵素となる複数の受光部1及
び転送電極2の設けられた転送部2′を有した固
体撮像素子4の表面に受光部(以下ホトダイオー
ドという)1の凹部が埋まる如く直接被染色層5
を全面塗布し(第1図A)、次に第1色目のフイ
ルタ成分を形成すべきホトダイオード1上の被染
色層5のみを硬化して他部の被染色層5を除去
し、残つた被染色層を染色して第1色目、例えば
緑のフイルタ成分6Gを形成する(第1図B)。
なお、3は転送部に光が照射されないように形成
した遮蔽膜である。次に緑のフイルタ成分6Gを
含む受光面の全面に透明な隔離層7を被着した後
(第1図C)、2色目に対応するホトダイオード
1′上のみに前記と同様の方法で被染色層を形成
しこれを染色して第2色目の例えば赤のフイルタ
成分6Rを形成する(第1図D)、次に同様の工
程を繰り返して隔離層7′を介して第3色目の例
えば青のフイルタ成分6Bを形成する(第1図
E)。このようにしていわゆる各色フイルタ成分
を有するカラーフイルタ6を素子4の表面に形成
してカラー固体撮像素子を構成する。
On the other hand, there is also a method of manufacturing a color solid-state image sensor that is completely different from the method described above. The manufacturing method of this color solid-state image sensor will be explained based on FIGS. Directly dye the layer 5 so that the concave part of the light receiving part (hereinafter referred to as photodiode) 1 is filled in the surface of 4.
(Fig. 1A), then harden only the dyed layer 5 on the photodiode 1 on which the first color filter component is to be formed, remove the other dyed layer 5, and remove the remaining dyed layer 5. The dyed layer is dyed to form a first color, for example, a green filter component 6G (FIG. 1B).
Note that 3 is a shielding film formed to prevent light from being irradiated onto the transfer section. Next, after depositing a transparent isolation layer 7 on the entire surface of the light-receiving surface containing the green filter component 6G (FIG. 1C), only the photodiode 1' corresponding to the second color is dyed in the same manner as described above. A layer is formed and dyed to form a filter component 6R of a second color, e.g. red (FIG. 1D), and then the same process is repeated to form a third color, e.g. blue, via the isolation layer 7'. A filter component 6B is formed (FIG. 1E). In this way, a color filter 6 having so-called filter components of each color is formed on the surface of the element 4 to constitute a color solid-state image sensor.

このカラー固体撮像素子によれば各フイルタ成
分が連続膜でなく互いに隔離層7,7′にて隔離
されているためにカラーフイルタとしての混色
(にじみ)の発生がなく、また局部的な膨潤、剥
離等も回避されるものである。
According to this color solid-state image sensor, each filter component is not a continuous film but is isolated from each other by isolation layers 7 and 7', so that there is no color mixing (bleeding) as a color filter, and there is no local swelling or swelling. Peeling and the like are also avoided.

しかし、このカラー固体撮像素子においても、
例えば第1図Aの被染色層5を塗布したときには
素子表面の凹凸による段差のためにその段部8の
被染色層5が薄く形成され段切れクラツクが発生
し、その後の工程における熱処理等を経るとフイ
タ成分が剥離脱落が生じるおそれがある。また被
染色層5がデバイスの表面に直接被着されるので
デバイスに対して悪影響を与えるおそれがある。
However, even with this color solid-state image sensor,
For example, when the layer 5 to be dyed shown in FIG. 1A is applied, the layer 5 to be dyed at the stepped portion 8 is formed thin due to the step difference due to the unevenness of the element surface, resulting in cracks in the step, and heat treatment etc. in the subsequent steps are required. Over time, the lid component may peel off and fall off. Furthermore, since the layer 5 to be dyed is directly adhered to the surface of the device, there is a possibility that it will have an adverse effect on the device.

本発明は上記従来の欠点を除去し、かつ光感度
を向上させたカラー固体撮像素子の製造方法を提
供するものである。
The present invention provides a method for manufacturing a color solid-state image sensor that eliminates the above-mentioned conventional drawbacks and improves photosensitivity.

以下第2図A〜Iを用いて本発明の一実施例に
よるカラー固体撮像素子の製造方法を詳述する。
A method of manufacturing a color solid-state image sensor according to an embodiment of the present invention will be described in detail below using FIGS. 2A to 2I.

本実施例では固体撮像素子の受光面上に緑、赤
及び青の3色からなるカラーフイルタを形成する
場合を示す。
In this embodiment, a case is shown in which a color filter consisting of three colors of green, red, and blue is formed on the light receiving surface of a solid-state image sensor.

まず第2図Aに示すように例えばCCDの電荷
転送素子より成るインターライン型固体撮像素子
4を形成する。同図は特に撮像素子の受光面を拡
大したもので、通常の如く絵素となる複数のホト
ダイオード1とホトダイオード1に隣接して形成
した転送電極2を有し2相又は3相のクロツク電
圧によつて電荷を一方向に転送する転送部2′及
び転送部への光入射を遮蔽する遮蔽膜3とが設け
られている。2の固体撮像素子4の受光面に全面
に光硬化性樹脂10を塗布する(第2図B)。そ
の後受光面の凹部のみを硬化する為所定のパター
ンをもつホトマスク21で露光後現像して樹脂膜
パターン10′を形成する(第2図C,D)。な
お、この樹脂10′の特性としては耐薬品性を有
するとともに素子に対し密着性が良く400〜700n
mの波長領域で光透過率の高いものが良い。
First, as shown in FIG. 2A, an interline solid-state image pickup device 4 made of, for example, a CCD charge transfer device is formed. The figure shows a particularly enlarged view of the light-receiving surface of the image sensor, which has a plurality of photodiodes 1 that serve as picture elements and a transfer electrode 2 formed adjacent to the photodiodes 1, and is connected to a two-phase or three-phase clock voltage. Therefore, a transfer section 2' that transfers charges in one direction and a shielding film 3 that blocks light from entering the transfer section are provided. A photocurable resin 10 is applied to the entire light-receiving surface of the solid-state image sensor 4 (FIG. 2B). Thereafter, in order to cure only the concave portions of the light-receiving surface, a resin film pattern 10' is formed by exposure and development using a photomask 21 having a predetermined pattern (FIGS. 2C and 2D). Furthermore, the characteristics of this resin 10' are that it has chemical resistance and good adhesion to the device.
A material with high light transmittance in the wavelength range of m is preferable.

ここで、前記第2図の工程A〜Dについて第3
図A〜Cを用いてさらに詳細に説明する。第2図
B〜Eにおいて前記光硬化樹脂10に塗布後流動
する性質を持つものを使用する場合、例えばノー
ランド社No.A61、サマーズ社UV−74等を使用す
れば第3図Aの如くホトマスク21を用いてプロ
キシミテイあるいはプロゼクシヨン露光すると、
矢印Xの方向へそれぞれ樹脂が引張られ、その
後、現象することにより第3図Bの如く凸形のパ
ターン形状に硬化形成される。すなわち光硬化性
樹脂が塗布後も流動性を持つているため露光中に
硬化部分中心Y方向に樹脂が引つ張られて硬化
し、結果的に露光部の面積が小さい場合(例えば
塗布膜厚が2〜3μmで露光面積が10×20μm2
度であれば)凸レンズ形状となる。
Here, regarding steps A to D in FIG.
This will be explained in more detail using Figures A to C. In FIGS. 2 B to E, when using a material that has the property of flowing after being applied to the photocuring resin 10, for example, Norland Co. No. A61, Somers Co. UV-74, etc., the photomask as shown in FIG. 3 A is used. When using proximity or projection exposure using 21,
The resin is pulled in the direction of the arrow X, and then cured and formed into a convex pattern shape as shown in FIG. 3B. In other words, since the photocurable resin has fluidity even after coating, the resin is stretched and cured in the Y direction of the center of the cured area during exposure, and as a result, if the area of the exposed area is small (for example, the coating film thickness is 2 to 3 μm and the exposed area is about 10×20 μm 2 ), it becomes a convex lens shape.

従つてホトダイオードの上に丁度凸レンズを設
置したような形となり従来ホトダイオード1に入
らなかつた光Zも第3図Cに示すように集光され
入射するため素子光感度が向上する。
Therefore, the structure is similar to that of a convex lens placed on top of a photodiode, and light Z, which did not conventionally enter the photodiode 1, is focused and incident as shown in FIG. 3C, thereby improving the light sensitivity of the element.

このように凹部ホトダイオード1を埋めかつそ
れぞれのホトダイオード1上に凸形の樹脂パター
ンを形成(第2図A〜D)した後その複数のホト
ダイオード1のうち第1色目のフイルター成分を
形成すべきホトダイオード1′に対応する部分の
樹脂膜パターン10′上に被染色層、例えば染色
用のゼラチンパターン6を形成する(第2図
E)。このゼラチンパターン6は、ゼラチンと重
クロム酸アンモンを9:1の割合で混合した混合
液を全面塗布して後必要な部分のみを紫外線露光
により硬化し他を選択除去して形成することがで
きる。
After filling the recessed photodiodes 1 and forming a convex resin pattern on each photodiode 1 (FIG. 2 A to D), one of the plurality of photodiodes 1 on which the first color filter component is to be formed is selected. A layer to be dyed, for example, a gelatin pattern 6 for dyeing, is formed on the resin film pattern 10' in a portion corresponding to 1' (FIG. 2E). This gelatin pattern 6 can be formed by applying a mixture of gelatin and ammonium dichromate at a ratio of 9:1 to the entire surface, hardening only the necessary parts by exposing to ultraviolet light, and selectively removing the others. .

そしてこのゼラチンパターン6を1色目の例え
ば緑の染色液に浸漬して着色し、緑のフイルタ成
分6Gを形成する(第2図F)。
Then, this gelatin pattern 6 is immersed in a dyeing solution of a first color, for example, green, to form a green filter component 6G (FIG. 2F).

なお、被染色層6としてはゼラチンの他カゼイ
ンやPVA等の有機物被染色層を用い得る。
In addition, as the layer 6 to be dyed, an organic material layer such as casein or PVA can be used in addition to gelatin.

次に緑フイルタ成分6Gとの隔離のために緑フ
イルタ成分6Gを含む受光面全面に例えばFVR
(商品名)等より成る透明な隔離層7を被着形成
する(第2図F)。次に2色目のフイルタ成分を
形成すべきホトダイオード部1″のみに前記と同
様の方法によつて染色用のゼラチン層6′を形成
し、これを2色目の例えば赤の染色液に浸漬して
着色し、赤のフイルタ成分6′Rを形成する(第
2図G,H)。
Next, in order to isolate the green filter component 6G, for example, FVR is applied to the entire light receiving surface including the green filter component 6G.
A transparent isolation layer 7 made of (trade name) or the like is deposited (FIG. 2F). Next, a gelatin layer 6' for dyeing is formed only on the photodiode section 1'' where the second color filter component is to be formed, by the same method as described above, and this is immersed in a dyeing solution of the second color, for example, red. It is colored to form a red filter component 6'R (FIG. 2G, H).

次に再び全面に透明な隔離層7′を装着して後
(第2図H)以下同様の方法を繰り返し即ち3色
目のフイルタ成分を形成すべきホトダイオード
1″上に染色用ゼラチン層6″を形成しこれを3色
目の例えば青の染色液に浸漬して着色し青のフイ
ルタ成分6″Bを形成する。
Next, after attaching a transparent isolation layer 7' to the entire surface again (FIG. 2H), the same method is repeated, that is, a dyeing gelatin layer 6'' is placed on the photodiode 1'' where the third color filter component is to be formed. This is then immersed in a dyeing liquid of a third color, for example, blue, to be colored to form a blue filter component 6''B.

このようにして第2図Iに示すように受光面上
にその各受光部1に対応して夫々緑、赤及び青の
フイルタ成分6G,6′R及び6″Bを配した染色
フイルタ即ちカラーフイルタ6を一体に形成して
成るカラー固体撮像素子が得られる。
In this way, as shown in FIG. 2I, a dyed filter, i.e., a color filter, in which green, red, and blue filter components 6G, 6'R, and 6''B are arranged corresponding to each light-receiving portion 1 on the light-receiving surface, respectively. A color solid-state image sensing device is obtained in which the filter 6 is integrally formed.

上述した本発明の実施例における工程E〜Iに
よれば受光面においてそのホトダイオード1部の
凹部を埋める如く透明の樹脂膜パターン10′を
凸形に形成して後この樹脂膜パターン10′上に
染色による色フイルタ6が形成されるので樹脂膜
パターン10′によつて受光表面の凹凸による段
差が緩和され被染色層6の段切れ、クラツクの発
生が回避されフイルタ成分の剥離、脱落が少なく
なる。しかも樹脂膜パターン10′によつてホト
ダイオード表面が保護されホトダイオードに直接
被染色層6が接触されないので被染色層6による
デバイスへの悪影響が回避される。さらに第1図
A〜Eの場合と同様に被染色層6が各色毎に対応
するホトダイオード1上にのみ選択的に形成され
しかもホトダイオード周辺の光もある程度ホトダ
イオード上に集光されるのでそれほど位置ずれに
よる素子特性の劣化を心配せずに容易に被染色層
6が形成できかつ素子の光感度も向上する。また
被染色層6を選択的に染色するとき先に染色され
た層6は隔離層7にて確実に隔離されているので
混色(にじみ)を生じることがなく特性のよい色
フイルタが得られる。
According to steps E to I in the embodiment of the present invention described above, a transparent resin film pattern 10' is formed in a convex shape so as to fill the concave portion of one part of the photodiode on the light receiving surface, and then a transparent resin film pattern 10' is formed on the resin film pattern 10'. Since the color filter 6 is formed by dyeing, the resin film pattern 10' alleviates the difference in level due to the unevenness of the light receiving surface, thereby avoiding the occurrence of step breakage and cracks in the dyed layer 6, and reducing the peeling and falling off of the filter components. . Moreover, since the surface of the photodiode is protected by the resin film pattern 10' and the layer 6 to be dyed does not come into direct contact with the photodiode, the adverse effect of the layer 6 to be dyed on the device is avoided. Furthermore, as in the case of FIGS. 1A to 1E, the dyed layer 6 is selectively formed only on the photodiode 1 corresponding to each color, and the light around the photodiode is also focused to some extent on the photodiode, so there is no significant positional shift. The layer 6 to be dyed can be easily formed without worrying about deterioration of the device characteristics due to this, and the photosensitivity of the device is also improved. Furthermore, when the dyed layer 6 is selectively dyed, the previously dyed layer 6 is reliably isolated by the isolation layer 7, so that color mixing (bleeding) does not occur and a color filter with good characteristics can be obtained.

なお、上記実施例では緑、赤及び青の3色から
なる色フイルタを有した混合に適用したがその他
多色からなる色フイルタを有する場合にも適用で
きること勿論である。
In the above embodiment, the present invention is applied to a mixture having a color filter consisting of three colors of green, red, and blue, but it is of course applicable to a case having a color filter consisting of other colors.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図A〜Eは従来のカラー固体撮像素子の製
造方法を説明するための同素子の断面図、第2図
A〜Iは本発明の一実施例におけるカラー固体撮
像素子の製造方法を説明するための同素子の断面
図、第3図A〜Cは第2図A〜Iの工程の要部を
さらに詳細に説明するための同素子の断面図であ
る。 1……ホトダイオード、3……遮蔽部、4……
固体撮像素子、5……被染色層、6……色フイル
タ、7……隔離層、10……透明膜。
FIGS. 1A to 1E are cross-sectional views of a conventional color solid-state image sensor for explaining a method of manufacturing the device, and FIGS. 2A to I are illustrating a method of manufacturing a color solid-state image sensor according to an embodiment of the present invention. FIGS. 3A to 3C are sectional views of the same device for explaining in more detail the main parts of the steps shown in FIGS. 2A to I. 1... Photodiode, 3... Shielding part, 4...
Solid-state image sensor, 5... layer to be dyed, 6... color filter, 7... isolation layer, 10... transparent film.

Claims (1)

【特許請求の範囲】 1 受光部と信号転送部が形成された素子上に
400〜700nmの波長領域で光透過率の高い光硬化
性樹脂を塗布する工程と、所定のホトマスクとプ
ロキシミテイーあるいはプロゼクシヨン露光装置
を用いて受光部上の光硬化性樹脂を凹部が被われ
るように選択的に露光硬化させる工程と、前記光
硬化性樹脂の未露光部を現像液で現像除去する工
程と、被染色層を形成して染色する工程とを繰り
返して前記受光部上にカラーフイルタを形成する
工程とを有することを特徴とするカラー固体撮像
素子の製造方法。 2 光硬化性樹脂が流動性を有している特許請求
の範囲第1項記載のカラー固体撮像素子の製造方
法。
[Claims] 1. On an element in which a light receiving section and a signal transfer section are formed.
A process of applying a photocurable resin with high light transmittance in the wavelength range of 400 to 700 nm, and using a prescribed photomask and a proximity or projection exposure device to apply the photocurable resin on the light receiving area so that the recesses are covered. A color filter is formed on the light-receiving area by repeating the steps of selectively exposing and curing the photocurable resin, developing and removing the unexposed areas of the photocurable resin with a developer, and forming and dyeing a layer to be dyed. 1. A method of manufacturing a color solid-state image sensor, comprising the step of forming a color solid-state image sensor. 2. The method for manufacturing a color solid-state image sensor according to claim 1, wherein the photocurable resin has fluidity.
JP56168434A 1981-10-20 1981-10-20 Color solid-state image sensing element and its manufacture Granted JPS5868970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56168434A JPS5868970A (en) 1981-10-20 1981-10-20 Color solid-state image sensing element and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56168434A JPS5868970A (en) 1981-10-20 1981-10-20 Color solid-state image sensing element and its manufacture

Publications (2)

Publication Number Publication Date
JPS5868970A JPS5868970A (en) 1983-04-25
JPS6251504B2 true JPS6251504B2 (en) 1987-10-30

Family

ID=15868039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56168434A Granted JPS5868970A (en) 1981-10-20 1981-10-20 Color solid-state image sensing element and its manufacture

Country Status (1)

Country Link
JP (1) JPS5868970A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198754A (en) * 1983-04-26 1984-11-10 Toshiba Corp Solid-state color image pickup device
JPS6030173A (en) * 1983-07-28 1985-02-15 Nec Corp Color solid-state image pickup element
JPS60182767A (en) * 1984-02-29 1985-09-18 Nec Corp Solid-state color image pickup element
JPS6132469A (en) * 1984-07-24 1986-02-15 Toppan Printing Co Ltd Color solid-state image pickup element
JPS6132468A (en) * 1984-07-24 1986-02-15 Toppan Printing Co Ltd Color colid-state image pickup element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374395A (en) * 1976-12-15 1978-07-01 Matsushita Electric Ind Co Ltd Solid state pickup device
JPS5687382A (en) * 1979-12-18 1981-07-15 Sony Corp Color image pickup element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374395A (en) * 1976-12-15 1978-07-01 Matsushita Electric Ind Co Ltd Solid state pickup device
JPS5687382A (en) * 1979-12-18 1981-07-15 Sony Corp Color image pickup element

Also Published As

Publication number Publication date
JPS5868970A (en) 1983-04-25

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