JPS62121781A - Adhesive sheet for wafer dicing - Google Patents

Adhesive sheet for wafer dicing

Info

Publication number
JPS62121781A
JPS62121781A JP60259849A JP25984985A JPS62121781A JP S62121781 A JPS62121781 A JP S62121781A JP 60259849 A JP60259849 A JP 60259849A JP 25984985 A JP25984985 A JP 25984985A JP S62121781 A JPS62121781 A JP S62121781A
Authority
JP
Japan
Prior art keywords
film
butene
wafer
dicing
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60259849A
Other languages
Japanese (ja)
Other versions
JPH068403B2 (en
Inventor
Masami Takeda
竹田 雅美
Tsuneaki Muro
室 恒昭
Haruhiko Tanaka
晴彦 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Petrochemical Industries Ltd
Original Assignee
Mitsui Petrochemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Petrochemical Industries Ltd filed Critical Mitsui Petrochemical Industries Ltd
Priority to JP25984985A priority Critical patent/JPH068403B2/en
Publication of JPS62121781A publication Critical patent/JPS62121781A/en
Publication of JPH068403B2 publication Critical patent/JPH068403B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To obtain the titled sheet having excellent strength and processability in a dicing process, by providing a self-adhesive layer on a butene polymer film. CONSTITUTION:A butene polymer (e.g., polybutene) is formed to give a film having a thickness of 30-200mum and, according to JIS K6781, a tensile modulus of 800-6,000kg/cm<2>, a stress at break of 150-700kg/cm<2>, an elongation at break of 150-600%, and a stress at 100% elongation of 50-300kg/cm<2>. A pressure-sensitive adhesive substance is uniformly applied or transferred in a thickness of 10-25mum to the surface of this film.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ウェハのダイジング用フィルムに関する
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a film for dicing semiconductor wafers.

〔従来の技術〕[Conventional technology]

半導体ペレットを製造する方法として、多数の半導体素
子が形成された半導体ウェハダイシング(切断)して各
素子を含むペレットとする方法が知られている。この場
合においては、特開昭58−147044号にも記載の
ようにダイヤモンドブレード等によりダイシング溝を設
けた半導体ウェハを適宜のフィルムに接着し、ローラに
よる押圧等により前記ダイシング溝の切り残し部を切り
離し、フィルムの下方から突き上げる等の機械的手段に
よって前記互いに切り離されたペレットを個々に取り出
すことが行われている。
2. Description of the Related Art As a method for manufacturing semiconductor pellets, a method is known in which a semiconductor wafer on which a large number of semiconductor elements are formed is diced (cut) into pellets containing each element. In this case, as described in JP-A-58-147044, a semiconductor wafer with dicing grooves formed with a diamond blade or the like is adhered to an appropriate film, and the uncut portions of the dicing grooves are removed by pressing with a roller or the like. The mutually separated pellets are taken out individually by mechanical means such as cutting and pushing up from below the film.

このダイシングフィルムとして、前記特開昭58−14
7044号には、塩化ビニル共重合体に可塑材が加えら
れてなる接着性を有する軟質ビニルフィルムが提案され
ている。このほかにも、ポリエチレンなどのポリオレフ
ィンのフィルム、ポリエステルのフィルム、ポリスチレ
ンのフィルムの表面に粘着剤層を形成させたものも使用
されている。
As this dicing film,
No. 7044 proposes a flexible vinyl film with adhesive properties made by adding a plasticizer to a vinyl chloride copolymer. In addition, polyolefin films such as polyethylene, polyester films, and polystyrene films with adhesive layers formed on their surfaces are also used.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来使用されている上記の自己粘着性を有する軟質塩化
ビニルフィルムにおいては、後述の延伸性には優れるも
ののその中に含まれる可塑剤がウェハに移行してこれを
汚染するという欠点があるほか、残留する塩化ビニルモ
ノマーも同様にウェハを汚染するという欠点がある。ま
た上記その他のフィルムにおいては、フィルムの延伸性
が劣るため、ウェハ切断後にフィルムの下方から突き上
げてペレットを個々に取り出す工程等の作業性に劣る欠
点があった。
Although the conventionally used soft vinyl chloride film with self-adhesive properties has excellent stretchability as described below, it has the disadvantage that the plasticizer contained therein migrates to the wafer and contaminates it. Residual vinyl chloride monomer also has the disadvantage of contaminating the wafer. In addition, the other films described above have a disadvantage in that, since the film has poor stretchability, the workability is poor, such as the step of pushing up from below the film to take out the pellets individually after cutting the wafer.

〔問題点を解決するための手段〕[Means for solving problems]

本発明者らは、ダイシングに必要な強度を有し、かつ前
述のような欠点のないダイシング用フィルムについて検
討したところ、下記の如きフィルムが適することを見い
出し、本発明を完成した。
The present inventors studied a film for dicing that has the strength necessary for dicing and does not have the above-mentioned drawbacks, and found that the following film was suitable, and completed the present invention.

すなわち、本発明は、ブテン系重合体のフィルム上に粘
着剤層を積層してなる半導体ウェハダイシング用フィル
ムである。
That is, the present invention is a film for semiconductor wafer dicing, which is formed by laminating an adhesive layer on a butene-based polymer film.

なお、特開昭59−177943号には、本発明の如き
ポリオレフィンフィルムを用いることができる旨記載が
あるが、その具体的実施例は全くなく、また、ブテン系
重合体を示唆するものはまったく記載されていない。
Although JP-A-59-177943 describes that a polyolefin film such as that of the present invention can be used, there are no specific examples thereof, and there is no suggestion of a butene-based polymer at all. Not listed.

〔ブテン系重合体〕[Butene-based polymer]

本発明のフィルムに用いられるブテン系重合体としては
、1−ブテンの単独重合体のほかに、l−ブテンとエチ
レン、プロピレン、Ct以上のα−オレフィンの共重合
体を用いることができる。
As the butene-based polymer used in the film of the present invention, in addition to a homopolymer of 1-butene, a copolymer of 1-butene, ethylene, propylene, or an α-olefin having a Ct or higher can be used.

これらの1−ブテン以外のモノマーが二種以上台まれる
共重合体であってもかまわない。05 以上    −
のα−オレフィンとしては、1−ペンテン、1−ヘキサ
ン、1−デセン、4−メチル−1−ペンチン、3−メチ
ル−1−ペンテンなどを例示することができ。好ましく
は4−メチル−1−ペンテンである。
A copolymer containing two or more of these monomers other than 1-butene may also be used. 05 or more −
Examples of the α-olefin include 1-pentene, 1-hexane, 1-decene, 4-methyl-1-pentyne, and 3-methyl-1-pentene. Preferred is 4-methyl-1-pentene.

ここで、とくに1−ブテンとエチレンとの共重合体にお
いては、通常エチレン含量が12モル%以下のものが用
いられ、好ましくは3モル%以下のものである。また1
−ブテンとプロピレンとの共重合体においては、通常プ
ロピレン含量が35モル%以下のものが用いられ、好ま
しくは20モル%以下のものである。さらに1−ブテン
とCs 以上のα−オレフィンとの共重合体においては
、通常酸α−オレフィンの含量が35モル%以下のもの
であり、好ましくは15モル%以下のものである。上記
の範囲を越えると、フィルムのブロー成形性などの成形
性ら劣るようになるので、前記範囲にあることが好まし
い。
Here, particularly in the copolymer of 1-butene and ethylene, one having an ethylene content of 12 mol% or less is usually used, preferably 3 mol% or less. Also 1
- In the copolymer of butene and propylene, one having a propylene content of 35 mol% or less is usually used, preferably 20 mol% or less. Further, in a copolymer of 1-butene and an α-olefin having a Cs or higher, the content of the acid α-olefin is usually 35 mol% or less, preferably 15 mol% or less. If it exceeds the above range, the blow moldability and other formability of the film will be poor, so it is preferably within the above range.

本発明に用いるブテン系重合体には、該ブテン系重合体
のほかに他のオレフィン系重合体、例えば、ポリエチレ
ン、ポリプロピレン、エチレン・プロピレン共重合体、
エチレン・1−ブテン共重合体、プロピレン・1−ブテ
ン共重合体(これらの共重合体においては、1−ブテン
含量が50モル%以下である)などを剛性などのフィル
ムの機械的性質を改良する目的で加えてもよい。この場
合においては、添加量は通常40wt%以下、好ましく
は20讐t%以下である。
In addition to the butene-based polymer, the butene-based polymer used in the present invention includes other olefin-based polymers such as polyethylene, polypropylene, ethylene/propylene copolymer,
Ethylene/1-butene copolymers, propylene/1-butene copolymers (in these copolymers, the 1-butene content is 50 mol% or less), etc. are used to improve the mechanical properties of films such as rigidity. It may be added for the purpose of In this case, the amount added is usually 40 wt% or less, preferably 20 wt% or less.

本発明に用いるブテン共重合体の他の性状としては、M
F R(ASTM D1238B 5190℃)が0.
01〜30、好ましくは0.1〜10g/10m1nで
ある。
Other properties of the butene copolymer used in the present invention include M
F R (ASTM D1238B 5190°C) is 0.
01 to 30, preferably 0.1 to 10 g/10 m1n.

〔ブテン系重合体〕[Butene-based polymer]

本発明に用いるブテン系重合体フィルムは前記ブテン系
重合体を、インフレーション成形法、ブロー成形法、T
−ダイ成形法などを通常フィルムの成形に用いられる成
形法により成形したものである。
The butene-based polymer film used in the present invention can be prepared by molding the butene-based polymer using the inflation molding method, the blow molding method, or the T.
- It is molded by a molding method commonly used for molding films, such as a die molding method.

フィルムの好ましい性状としては、厚み30ないし20
0.crm、  JISK6781による引張弾性率8
00ないし6000kg/ ci破断点応力150ない
し700kg /ctA破断点伸び150ないし600
%、100%伸び応力50ないし300kg/calで
ある。
The preferred properties of the film include a thickness of 30 to 20
0. crm, tensile modulus 8 according to JISK6781
00 to 6000kg/ci Stress at break 150 to 700kg/ctA Elongation at break 150 to 600
%, 100% elongation stress is 50 to 300 kg/cal.

〔粘着剤層〕[Adhesive layer]

本発明のフィルムに積層される粘着剤層はウェハを固定
するに十分であり、かつウェハの切断後においては、前
述の半導体ペレットの突き離し分離工程において、該ペ
レットを汚染することな(分離できるものであれば、従
来からもちいられている感圧接着物質をそのまま用いる
ことができる。
The adhesive layer laminated on the film of the present invention is sufficient to fix the wafer, and after the wafer is cut, it can be used without contaminating (separating) the pellets in the above-mentioned pushing-off and separation process of the semiconductor pellets. Any pressure-sensitive adhesive material that has been used in the past can be used as is.

但し、塩化ビニル樹脂に加えられるような可塑剤を含ま
ないものが好ましい。このようなものの−例としては、
特開昭59−177943に記載のブロック共重合体と
他のゴム成分および粘着性付与樹脂からなるものを挙げ
ることができる。この場合、用いるブロック共重合体に
よっては他のゴム成分は必ずしも必要ではない。本発明
のフィルムとしては、特開昭59−177943に用い
られるブロック共重合体を主体とする粘着剤層を用いる
ことが好ましい。
However, it is preferable to use one that does not contain a plasticizer such as that added to vinyl chloride resin. Something like this - for example:
Examples include those consisting of a block copolymer described in JP-A-59-177943, another rubber component, and a tackifying resin. In this case, other rubber components are not necessarily required depending on the block copolymer used. As the film of the present invention, it is preferable to use an adhesive layer mainly composed of a block copolymer used in JP-A-59-177943.

上記感圧接着物質からなる粘着剤層は前述のブテン系重
合体のフィルム上に通常用いられる方法により、厚さ1
0ないし25μmの範囲で均一に塗布ないし転写され、
本発明の半導体ウェハダイシング用フィルムが製造され
る。
The pressure-sensitive adhesive layer made of the above-mentioned pressure-sensitive adhesive material is coated on the above-mentioned butene-based polymer film to a thickness of 1.
Uniformly coated or transferred in the range of 0 to 25 μm,
The film for semiconductor wafer dicing of the present invention is manufactured.

〔発明の効果〕〔Effect of the invention〕

本発明のダイシング用フィルムを用いることにより、ウ
ェハを汚染することなく、かつフィルムの延伸性に優れ
ることによりグイシング工程の作業性も向上する。
By using the dicing film of the present invention, the workability of the dicing process is improved because the wafer is not contaminated and the film has excellent stretchability.

〔実施例〕 、 実施例1 スチレン−イソプレン−スチレンブロック共重合体ゴム
(スチレン/イソプレン= 14/86重fil比、シ
ェル化学型「クレイトンG1657J > 27重M部
、石油系樹脂(三井石油化学製「ハイレッツT−300
XJ ) 3重量部からなる感圧接着性物質を、厚さ1
00μmのポリブテンフィルムに厚み10μmで塗布し
て、本発明のウェハダイシング用粘着フィルムを得た。
[Example], Example 1 Styrene-isoprene-styrene block copolymer rubber (styrene/isoprene = 14/86 heavy fil ratio, Shell chemical type "Krayton G1657J > 27 heavy M parts, petroleum resin (Mitsui Petrochemical Co., Ltd.) “Highlets T-300
XJ) 3 parts by weight of a pressure-sensitive adhesive material with a thickness of 1
The adhesive film for wafer dicing of the present invention was obtained by coating a 00 μm polybutene film with a thickness of 10 μm.

かかるウェハダイシング用粘着フィルムの特性を評価す
るために、以下の試験を行った。
In order to evaluate the characteristics of such an adhesive film for wafer dicing, the following tests were conducted.

(1)ウェハダイシング用粘着フィルムの引張物性JI
S K6301−1975に記載の4弓形ダンベル状試
験片に相似の試験片であって、全長50mm、両端の幅
10mm、チャックチャ離30mm、平行部分の長さが
15mm、平行部分の巾が51、平行部分の厚さが0.
08n+m、アール(R)が12mm、標線距離が15
mmの試験片により、試験温度23℃、試験スピード5
0mn+/minの条件でJIS K6781に準じ引
張弾性率、破断点応力、破断点伸び、100%伸び応力
を求めた。
(1) Tensile properties JI of adhesive film for wafer dicing
A test piece similar to the four-bow dumbbell test piece described in S K6301-1975, total length 50 mm, width at both ends 10 mm, chuck distance 30 mm, parallel part length 15 mm, parallel part width 51, The thickness of the parallel part is 0.
08n+m, R is 12mm, gauge distance is 15
mm test piece, test temperature 23℃, test speed 5
The tensile modulus, stress at break, elongation at break, and 100% elongation stress were determined according to JIS K6781 under the condition of 0 m+/min.

(2)対ウェハ粘着剤残存試験 ウェハダイシング用粘着フィルムをウェハに固定し、5
0℃、30分間加熱後剥離し、ウェハに残存する粘着剤
の有無を50倍の顕微鏡により拡大して調べた。
(2) Wafer adhesive residual test Fix the adhesive film for wafer dicing to the wafer,
After heating at 0°C for 30 minutes, the wafer was peeled off, and the presence or absence of any adhesive remaining on the wafer was examined under a 50x magnification microscope.

(3)対ウェハ金属イオン(C1−)残存試験対ウェハ
粘着剤残存試験後のウェハに残存するCZ−を、島原製
作所ESCA−750により、A I K=c 線励起
(8KV−30mA )の条件で分析を行った。
(3) CZ- remaining on the wafer after the wafer metal ion (C1-) residual test vs. wafer adhesive residual test was subjected to AI K=c line excitation (8 KV-30 mA) using Shimabara Manufacturing ESCA-750. The analysis was carried out.

以上の結果を表1に記載する。The above results are listed in Table 1.

比較例1 可塑剤としてジオクチルフタレート(DOP)を20%
含有するフィルム塩化ビニル(日本ゼオン社製「ゼオン
103EP Jフィルム(厚み100μm)をウェハダ
イシング用粘着フィルムとして使用する以外は、実施例
1に準じて試験を行った。結果を表1に記載する。
Comparative Example 1 20% dioctyl phthalate (DOP) as a plasticizer
A test was conducted according to Example 1 except that a film containing vinyl chloride (Zeon 103EP J film (thickness 100 μm) manufactured by Nippon Zeon Co., Ltd. was used as the adhesive film for wafer dicing. The results are shown in Table 1.

比較例2 PEフィルム(厚み100μm)に実施例1に記載する
粘着剤を塗布(厚み10μm)L、以下同様の試験を行
った、結果は表1に記載する。
Comparative Example 2 The adhesive described in Example 1 was applied to a PE film (thickness 100 μm) (thickness 10 μm), and the same test was conducted. The results are shown in Table 1.

Claims (1)

【特許請求の範囲】[Claims] (1)ブテン系重合体のフィルム上に粘着剤層を積層し
てなる半導体ウェハダイシング用フィルム。
(1) A film for semiconductor wafer dicing, which is made by laminating an adhesive layer on a butene-based polymer film.
JP25984985A 1985-11-21 1985-11-21 Adhesive sheet for wafer dicing Expired - Fee Related JPH068403B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25984985A JPH068403B2 (en) 1985-11-21 1985-11-21 Adhesive sheet for wafer dicing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25984985A JPH068403B2 (en) 1985-11-21 1985-11-21 Adhesive sheet for wafer dicing

Publications (2)

Publication Number Publication Date
JPS62121781A true JPS62121781A (en) 1987-06-03
JPH068403B2 JPH068403B2 (en) 1994-02-02

Family

ID=17339830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25984985A Expired - Fee Related JPH068403B2 (en) 1985-11-21 1985-11-21 Adhesive sheet for wafer dicing

Country Status (1)

Country Link
JP (1) JPH068403B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05230426A (en) * 1992-02-24 1993-09-07 Lintec Corp Self-adhesive sheet for sticking wafer and method for picking up chip
US5648136A (en) * 1995-07-11 1997-07-15 Minnesota Mining And Manufacturing Co. Component carrier tape
US5851664A (en) * 1995-07-11 1998-12-22 Minnesota Mining And Manufacturing Company Semiconductor wafer processing adhesives and tapes
JP2000169808A (en) * 1998-09-30 2000-06-20 Nitto Denko Corp Thermally releasable type tacky sheet
US6235387B1 (en) 1998-03-30 2001-05-22 3M Innovative Properties Company Semiconductor wafer processing tapes
JP2007324456A (en) * 2006-06-02 2007-12-13 Nitto Denko Corp Adhesive sheet for dicing, and machining method of material to be cut using the same
JP6088701B1 (en) * 2016-10-06 2017-03-01 株式会社きもと Auxiliary sheet for laser dicing
WO2018003312A1 (en) * 2016-06-30 2018-01-04 リンテック株式会社 Semiconductor processing sheet
JP2018060994A (en) * 2016-10-06 2018-04-12 株式会社きもと Laser dicing assistance sheet

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100536A (en) * 1976-02-19 1977-08-23 Mitsui Petrochem Ind Ltd Adhesive tape

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100536A (en) * 1976-02-19 1977-08-23 Mitsui Petrochem Ind Ltd Adhesive tape

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05230426A (en) * 1992-02-24 1993-09-07 Lintec Corp Self-adhesive sheet for sticking wafer and method for picking up chip
US5648136A (en) * 1995-07-11 1997-07-15 Minnesota Mining And Manufacturing Co. Component carrier tape
US5729963A (en) * 1995-07-11 1998-03-24 Minnesota Mining And Manufacturing Company Component carrier tape
US5851664A (en) * 1995-07-11 1998-12-22 Minnesota Mining And Manufacturing Company Semiconductor wafer processing adhesives and tapes
US6235387B1 (en) 1998-03-30 2001-05-22 3M Innovative Properties Company Semiconductor wafer processing tapes
US6478918B2 (en) 1998-03-30 2002-11-12 3M Innovative Properties Company Semiconductor wafer processing tapes
JP4540150B2 (en) * 1998-09-30 2010-09-08 日東電工株式会社 Thermally peelable adhesive sheet
JP2000169808A (en) * 1998-09-30 2000-06-20 Nitto Denko Corp Thermally releasable type tacky sheet
US8025968B2 (en) 2006-06-02 2011-09-27 Nitto Denko Corporation Pressure-sensitive adhesive sheet for dicing and method for processing processed material using the same
KR101046669B1 (en) 2006-06-02 2011-07-06 닛토덴코 가부시키가이샤 Pressure-sensitive adhesive sheet for dicing, and a method of processing the workpiece using the sheet
JP2007324456A (en) * 2006-06-02 2007-12-13 Nitto Denko Corp Adhesive sheet for dicing, and machining method of material to be cut using the same
WO2018003312A1 (en) * 2016-06-30 2018-01-04 リンテック株式会社 Semiconductor processing sheet
CN109075048A (en) * 2016-06-30 2018-12-21 琳得科株式会社 Sheet for processing semiconductor
JPWO2018003312A1 (en) * 2016-06-30 2019-04-18 リンテック株式会社 Semiconductor processing sheet
JP6088701B1 (en) * 2016-10-06 2017-03-01 株式会社きもと Auxiliary sheet for laser dicing
JP2018060940A (en) * 2016-10-06 2018-04-12 株式会社きもと Laser dicing assistance sheet
WO2018066229A1 (en) * 2016-10-06 2018-04-12 株式会社きもと Laser dicing assistance sheet
JP2018060994A (en) * 2016-10-06 2018-04-12 株式会社きもと Laser dicing assistance sheet
CN109819677A (en) * 2016-10-06 2019-05-28 木本股份有限公司 Laser cutting uses auxiliary piece
CN109819677B (en) * 2016-10-06 2024-01-12 木本股份有限公司 Auxiliary sheet for laser cutting

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