JPS6128810A - Observing system of mask pattern - Google Patents

Observing system of mask pattern

Info

Publication number
JPS6128810A
JPS6128810A JP14941884A JP14941884A JPS6128810A JP S6128810 A JPS6128810 A JP S6128810A JP 14941884 A JP14941884 A JP 14941884A JP 14941884 A JP14941884 A JP 14941884A JP S6128810 A JPS6128810 A JP S6128810A
Authority
JP
Japan
Prior art keywords
mask
fluorescence
light
excitation light
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14941884A
Other languages
Japanese (ja)
Inventor
Koichi Tsukazaki
柄崎 晃一
Yasuhiko Hara
靖彦 原
Noriaki Ujiie
氏家 典明
Yutaka Hashimoto
豊 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14941884A priority Critical patent/JPS6128810A/en
Publication of JPS6128810A publication Critical patent/JPS6128810A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/645Specially adapted constructive features of fluorimeters
    • G01N21/6456Spatial resolved fluorescence measurements; Imaging
    • G01N2021/646Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N2021/95676Masks, reticles, shadow masks

Landscapes

  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

Abstract

PURPOSE:To make high the precision of the inspection of a mask pattern by a system wherein a fluorescent substance emitting fluorescence by the application of an excitation light is disposed on one side of a mask and the fluorescence generated by the excitation light is detected by a detector through the mask. CONSTITUTION:A light 121 generated from a light source 102 and passing through a condenser lens 103 is made to pass through a first filter 108 so as to be turned into an excitation light 122 having a wavelength which tends to generate fluorescence. Thereafter, the direction of this light is shifted by a translucent mirror 109, and then the light is made to pass through a transparent portion of a mask 101 and irradiate a fluorescent substance 107, wherefrom fluorescence 123 is generated. Next, the fluorescence 123 is reduced to fluorescence 125 alone through the translucent mirror 109, an imaging lens 105 and a second filter 110, and the latter is imaged on a detector 106 and subjected to photoelectric transfer. Thereby the existence of a minute point (x) and a transparent minute point (y) on the mask 101 is detected, without fail, as (a) and (b) on detection signal levels. According to this system, both a minute opaque point and a transparent point can be detected.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、プリント基板や半導体集積回路の製造に用い
るフォトマスクなどのマスクに形成されたパターンを観
測するためのマスク・パターン観測方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a mask pattern observation method for observing a pattern formed on a mask such as a photomask used for manufacturing printed circuit boards and semiconductor integrated circuits.

〔発明の背景〕[Background of the invention]

従来、マスクのパターン検査を行う場合等には。 Conventionally, when inspecting patterns on masks, etc.

特開昭55−72804号公報に示されるように、マス
クを光源により照明し、マスクからの反射光またはマス
クの透過光を検出器で検出することによってマスク・パ
ターンをll!測している。
As shown in Japanese Unexamined Patent Publication No. 55-72804, a mask pattern is detected by illuminating a mask with a light source and detecting light reflected from the mask or light transmitted through the mask with a detector. I'm measuring.

第5図はそのような従来方式によりマスク・パターン観
測を行うマスク検査装置を示している。
FIG. 5 shows a mask inspection apparatus that observes mask patterns using such a conventional method.

この図において、1は検査対象のマスクであり、その下
側からコンデンサレンズ3および反射鏡4を介して光源
2により照明される。マスク1を透過した光27は、結
像レンズ5によって検出器6の撮像面に結像され、電気
信号に変換される。
In this figure, 1 is a mask to be inspected, and is illuminated from below by a light source 2 via a condenser lens 3 and a reflecting mirror 4. The light 27 that has passed through the mask 1 is imaged on the imaging surface of the detector 6 by the imaging lens 5 and converted into an electrical signal.

このような装置で、たとえば第6図(a)に示すマスク
1のパターンを1図のA−A ’線に沿って観測した場
合、検出器6から得られる検出信号波形は第6図(b)
に示すようになる。ここで問題となるのは、マスク1の
透明部分に存在する不透明な微小点Xに対する信号レベ
ルVxが、不透明部分(第6図(a)の斜線部分)に相
当する信号レベルまで−、゛/Iらず、逆に不透明部分
の微小な透明点yに対応する検出信号レベルvyが透明
部分に対応するレベルまで上がらず、その結果、微小点
X。
For example, when the pattern of the mask 1 shown in FIG. 6(a) is observed along line A-A' in FIG. 1 with such an apparatus, the detection signal waveform obtained from the detector 6 is as shown in FIG. 6(b). )
It becomes as shown in . The problem here is that the signal level Vx for the opaque minute point X existing in the transparent part of the mask 1 is -, ゛/ On the contrary, the detection signal level vy corresponding to the minute transparent point y in the opaque area does not rise to the level corresponding to the transparent area, and as a result, the minute point X.

yを検出できないということである。すなわち従来方式
は、微小パターンに対するS/Nが悪いという問題があ
る。
This means that y cannot be detected. That is, the conventional method has a problem in that the S/N ratio for minute patterns is poor.

このような問題は、マスクの反射光を検出する場合も同
様である。
Such problems also occur when detecting light reflected from a mask.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、従来よりもS/Nの良いマスク・パタ
ーン像を観測することができるマスク・パターン観測方
式を提供することにある。
An object of the present invention is to provide a mask pattern observation method that can observe a mask pattern image with a better S/N than conventional methods.

〔発明の概要〕[Summary of the invention]

本発明は、励起光を照射すると蛍光を発生する蛍光体を
マスクの一方の側に配置し、蛍光体に励起光を照射し蛍
光体から蛍光を発生させ、その蛍光をマスクを介して検
出器で検出することにより、マスク・パターンを従来よ
りも良好なS/Nにて観測し、より高精度なマスク・パ
ターンの検査等を可能とするものである。
In the present invention, a phosphor that generates fluorescence when irradiated with excitation light is placed on one side of a mask, the phosphor is irradiated with excitation light, the phosphor generates fluorescence, and the fluorescence is transmitted to the detector through the mask. By detecting the mask pattern, it is possible to observe the mask pattern with a better S/N ratio than before, and it is possible to inspect the mask pattern with higher precision.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について図面を参照し説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例によるマスク検査装置の概略
側面図である。この図において、101は検査対象のマ
スクであり、その下側に接近させて蛍光体107が設け
られている。102は光源であり、この光源から発生し
コンデンサレンズ103を通過した光121は、第1の
フィルタ108を通過し・て蛍光体107に蛍光を発生
させやすい波長の励起光122となる。この励起光12
2は半透鏡109によって方向が変えられ、マスク10
1の透明部を通過して蛍光体107を照射し。
FIG. 1 is a schematic side view of a mask inspection apparatus according to an embodiment of the present invention. In this figure, 101 is a mask to be inspected, and a phosphor 107 is provided close to the underside of the mask. Reference numeral 102 denotes a light source, and light 121 generated from this light source and passed through the condenser lens 103 passes through the first filter 108 and becomes excitation light 122 having a wavelength that easily causes the phosphor 107 to generate fluorescence. This excitation light 12
2 is redirected by a semi-transparent mirror 109, and the mask 10
The phosphor 107 is irradiated through the transparent part 1.

蛍光123を発生させる。励起光122のマスク101
表面からの反射光と、マスク101の透明部を透過した
励起光123との合成光124は、半透鏡109、結像
レンズ105および第2のフィルタ110を通過し、そ
の蛍光成分125のみが検出器106の撮像面に結像さ
れ、光電変換される。
Fluorescence 123 is generated. Mask 101 for excitation light 122
The combined light 124 of the light reflected from the surface and the excitation light 123 transmitted through the transparent part of the mask 101 passes through the semi-transparent mirror 109, the imaging lens 105 and the second filter 110, and only its fluorescent component 125 is detected. An image is formed on the imaging surface of the device 106 and photoelectrically converted.

蛍光体107の材質は種々可能であるが、たとえばプリ
ント基板の基材として用いられているガラスポリイミド
板やガラスエポキシ板を用いることができる。ガラスポ
リイミド板を蛍光体107として用いる場合、波長50
0nmの励起光に対して蛍光発生量がピークとなり、蛍
光の波長は600nmを中心に300〜800nmの範
囲である。したがって、第1のフィルタ108として、
透過率が370〜390nmでピークとなり、500r
vの波長まで透過させるブルーフィルタを用いることが
できる。また第2のフィルタ110としては、約500
nm以上の波長の光を透過させ、520〜540nmの
波長で透過率が50%となるイエローフィルタを用いる
ことができる。尚この場合、光源102として波長が5
14または488nmのアルゴンレーザを用いれば、第
1のフィルタ108を省くことができる。
Although various materials are possible for the phosphor 107, for example, a glass polyimide plate or a glass epoxy plate used as a base material of a printed circuit board can be used. When using a glass polyimide plate as the phosphor 107, the wavelength is 50
The amount of fluorescence generated peaks with respect to excitation light of 0 nm, and the wavelength of the fluorescence is in the range of 300 to 800 nm, centered around 600 nm. Therefore, as the first filter 108,
The transmittance peaks at 370-390nm, and at 500r
A blue filter that transmits up to a wavelength of v can be used. Further, as the second filter 110, about 500
A yellow filter that transmits light having a wavelength of nm or more and has a transmittance of 50% at a wavelength of 520 to 540 nm can be used. In this case, the light source 102 has a wavelength of 5
If a 14 or 488 nm argon laser is used, the first filter 108 can be omitted.

さて、当該装置において、第2図(a)に示すマスク1
01について、A−A ’線上のパターン観測を行った
場合、第2図(b)に示すような検出信号が検出器10
6から出力される。図から分がるように、マスク101
の透明部に存在する不透明な微小点Xに対する検出信号
レベルVxは不透明部分(斜線部)に対応する信号レベ
ルまで下がり。
Now, in this apparatus, the mask 1 shown in FIG. 2(a)
When observing the pattern on the line A-A' for 01, a detection signal as shown in FIG. 2(b) is detected by the detector 10.
It is output from 6. As can be seen, the mask 101
The detection signal level Vx for the opaque minute point X existing in the transparent part of is lowered to the signal level corresponding to the opaque part (shaded part).

逆に不透明部中の透明な微小点yに対する検出信号レベ
ルvyは透明部に対応する検出信号レベルまで上昇する
。従って、検出信号レベルから、微小点Xl’3/の存
在を確実に検出することができ、従来よりも正確なマス
ク・パターンの観測、検査が可能となる。
Conversely, the detection signal level vy for the transparent minute point y in the opaque area increases to the detection signal level corresponding to the transparent area. Therefore, the presence of the minute point Xl'3/ can be reliably detected from the detection signal level, and the mask pattern can be observed and inspected more accurately than before.

第3図、に本発明の他の実施例によるマスク検査装置を
示し、説明する。本実施例においては、蛍光体107の
裏面に励起光を照射するように光源102、コンデンサ
レンズ103、第1のフィルタ108、および反射鏡1
04が配置されている。
FIG. 3 shows and describes a mask inspection apparatus according to another embodiment of the present invention. In this embodiment, a light source 102, a condenser lens 103, a first filter 108, and a reflecting mirror 1 are used to irradiate the back surface of the phosphor 107 with excitation light.
04 is placed.

また、第1図の第2のフィルタ110に相当するフィル
タは省かれている。蛍光体107から発生される蛍光1
23のマスク101の透明部を透過した分と、蛍光体1
07およびマスク101の透明部を透過した励起光12
2との合成光126は、結像レンズ105により検出器
106の撮像面に結像され、光電変換される。
Further, a filter corresponding to the second filter 110 in FIG. 1 is omitted. Fluorescence 1 generated from phosphor 107
The amount transmitted through the transparent part of the mask 101 of No. 23 and the phosphor 1
07 and the excitation light 12 transmitted through the transparent part of the mask 101
The combined light 126 with 2 is imaged on the imaging surface of the detector 106 by the imaging lens 105 and photoelectrically converted.

本実施例の場合、蛍光と励起光の合成光126によって
マスクパターンを検出することになるので、上記実施例
に比へ検出信号レベルを大きくすることができ、S/N
を一層改善できる。
In the case of this embodiment, since the mask pattern is detected by the combined light 126 of fluorescence and excitation light, the detection signal level can be increased compared to the above embodiment, and the S/N
can be further improved.

本発明の別の実施例によるマスク検査装置を第4図に示
す。この実施例においては、マスク101の上側に蛍光
体123が配置され、励起光122はマスク101の透
明部を介して蛍光体123に照射される。マスク101
の透明部を通過した蛍光123とマスク101で反射さ
れた励起光122との合成光124は、反射鏡104に
より方向を変えられ、結像レンズ105およびフィルタ
110を介し、蛍光125として検出器106の結像面
に結像される。
A mask inspection apparatus according to another embodiment of the present invention is shown in FIG. In this embodiment, a phosphor 123 is placed above the mask 101, and the excitation light 122 is irradiated onto the phosphor 123 through the transparent portion of the mask 101. mask 101
The combined light 124 of the fluorescent light 123 that has passed through the transparent part of the mask 101 and the excitation light 122 reflected by the mask 101 is changed in direction by the reflecting mirror 104, passes through the imaging lens 105 and the filter 110, and is sent to the detector 106 as the fluorescent light 125. The image is formed on the imaging plane.

ここで、励起光122はマスク101に対して斜め方向
から照射されるため、その正反射光成分は反射鏡】04
側へは入射せず、乱反射光成分だけが反射鏡10/l側
へ入射する。そして、マスク101の表面は平滑である
ため、乱反射光成分はほとんど無視できるものである。
Here, since the excitation light 122 is irradiated to the mask 101 from an oblique direction, its specularly reflected light component is reflected from the reflector]04
Only the diffusely reflected light component enters the reflecting mirror 10/l side. Since the surface of the mask 101 is smooth, the diffusely reflected light component can be almost ignored.

従って、反射鏡104に入射する合成光124は、はと
んどマスク101の透明部を透過した蛍光123と見な
すことかできる。故に、前記各実施例と同様にS/Nの
良いマスク・パターン観測が可能である。
Therefore, the combined light 124 that enters the reflecting mirror 104 can be regarded as the fluorescence 123 that has mostly passed through the transparent portion of the mask 101. Therefore, mask pattern observation with good S/N ratio is possible as in each of the embodiments described above.

また本実施例においては、マスク101の上側に蛍光体
123が配置されるため、マスク101への塵芥の落下
付着を避けることができる。
Further, in this embodiment, since the phosphor 123 is arranged above the mask 101, it is possible to prevent dust from falling and adhering to the mask 101.

〔発明の効果〕〔Effect of the invention〕

本発明は以上説明したごとくであるから、従来検出が困
難であったマスク上の微小な不透明点または透明点も確
実に検出することができ、より高精度のマスク・パター
ンの観測、検査が可能となる。
As the present invention has been described above, it is possible to reliably detect minute opaque or transparent points on a mask, which were difficult to detect in the past, and it is possible to observe and inspect mask patterns with higher precision. becomes.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例によるマスク検査装置を示す
概略側面図、第2図(a)はマスクの一例を示す平面図
、第2図(b)は上記マスク検査装置において得られる
第2図(a)のA−A′線に対応するパターン検出信号
の波形図、第3図は本発明の他0実施例1°するv、x
y検査装置の概略側面図・       i第4図は本
発明の別の実施例によるマスク検査装置の概略側面図、
第5図は従来方式によるマスク検査装置を示す概略側面
図、第6 m (a )はマスクの一例を示す平面図、
第6図(b)は上記従来装置において第6図(b)のA
−A′線に対して得られるパターン検出信号の波形図で
ある。 101・・・マスク、  102・・・光源、103・
・・コンデンサレンズ、  104・・・反射鏡。 105・・・結像レンズ、  106・・・検出器。 107・・蛍光体、  108,110・・・フィルタ
。 109・・・半透鏡、  ]22・・・励起光。 123・・・蛍光。 第1図 第2図 体 、lx 第3図 z1 第  4  図 第  5  図 第6図 イi I       X
FIG. 1 is a schematic side view showing a mask inspection apparatus according to an embodiment of the present invention, FIG. 2(a) is a plan view showing an example of a mask, and FIG. 2. A waveform diagram of the pattern detection signal corresponding to the line A-A' in FIG. 2(a). FIG.
y A schematic side view of an inspection device. i FIG. 4 is a schematic side view of a mask inspection device according to another embodiment of the present invention.
FIG. 5 is a schematic side view showing a conventional mask inspection device, and FIG. 6(a) is a plan view showing an example of a mask.
FIG. 6(b) shows A of FIG. 6(b) in the above conventional device.
FIG. 3 is a waveform diagram of a pattern detection signal obtained for the -A' line. 101...Mask, 102...Light source, 103...
...Condenser lens, 104...Reflector. 105...Imaging lens, 106...Detector. 107...phosphor, 108,110...filter. 109...Semi-transparent mirror, ]22...Excitation light. 123...Fluorescence. Figure 1 Figure 2 Body, lx Figure 3 Z1 Figure 4 Figure 5 Figure 6 I I

Claims (1)

【特許請求の範囲】[Claims] (1)励起光を照射されると蛍光を発生する蛍光体をマ
スクの一方の側に配置し、該蛍光体に励起光を照射し、
該蛍光体から発する蛍光を該マスクを介して検出器で検
出することにより、該マスクのパターンを観測すること
を特徴とするマスク・パターン観測方式。
(1) A phosphor that generates fluorescence when irradiated with excitation light is placed on one side of the mask, and the phosphor is irradiated with excitation light,
A mask pattern observation method characterized in that a pattern of the mask is observed by detecting fluorescence emitted from the phosphor with a detector through the mask.
JP14941884A 1984-07-20 1984-07-20 Observing system of mask pattern Pending JPS6128810A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14941884A JPS6128810A (en) 1984-07-20 1984-07-20 Observing system of mask pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14941884A JPS6128810A (en) 1984-07-20 1984-07-20 Observing system of mask pattern

Publications (1)

Publication Number Publication Date
JPS6128810A true JPS6128810A (en) 1986-02-08

Family

ID=15474676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14941884A Pending JPS6128810A (en) 1984-07-20 1984-07-20 Observing system of mask pattern

Country Status (1)

Country Link
JP (1) JPS6128810A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018036235A (en) * 2016-09-02 2018-03-08 株式会社Screenホールディングス Substrate checkup device, substrate processing device, substrate checkup method, and substrate processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018036235A (en) * 2016-09-02 2018-03-08 株式会社Screenホールディングス Substrate checkup device, substrate processing device, substrate checkup method, and substrate processing method

Similar Documents

Publication Publication Date Title
CA1226348A (en) Inspection system utilizing dark-field illumination
JP2796316B2 (en) Defect or foreign matter inspection method and apparatus
KR930010527A (en) Surface condition inspection method using irradiation and its device
JPS6080745A (en) Automated detector for foreign matter
JPS6128810A (en) Observing system of mask pattern
JPS6061648A (en) Pattern detector
JPH06160062A (en) Defect inspecting device
JP3409272B2 (en) Foreign matter inspection method of exposure mask
JP2519363B2 (en) Wiring pattern defect inspection method on printed circuit board
JPS62119444A (en) Pattern inspector
JPH04221747A (en) Method and device for inspecting through-hole
JPH0469511A (en) Visual inspection device for soldering part and packaging component
JPH10170240A (en) Method and device for inspection of pattern flaw
JPS603507A (en) Wiring pattern detecting device
JPS608705A (en) Pattern detector
JPH04344447A (en) Detecting device for defect in transparent glass substrate
JPH0476042B2 (en)
JPH11312241A (en) Pattern inspecting device
JPH0361884B2 (en)
JPH0436335B2 (en)
JPS63193041A (en) Apparatus for inspecting foreign matter
JPS6144309A (en) Pattern detecting method
JPS6175240A (en) Through hole inspector
JPH05296747A (en) Fluorescent penetrant inspection device for transparent printed board
JPH03160450A (en) Method for inspecting defect of mask