JPS6113652A - Sensor for loading to which radiation deterioration reduction countermeasure is considered - Google Patents

Sensor for loading to which radiation deterioration reduction countermeasure is considered

Info

Publication number
JPS6113652A
JPS6113652A JP59133733A JP13373384A JPS6113652A JP S6113652 A JPS6113652 A JP S6113652A JP 59133733 A JP59133733 A JP 59133733A JP 13373384 A JP13373384 A JP 13373384A JP S6113652 A JPS6113652 A JP S6113652A
Authority
JP
Japan
Prior art keywords
ccd
sensor
ccd2
radiation
radiation deterioration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59133733A
Other languages
Japanese (ja)
Inventor
Toyohachi Yokota
横田 豊八
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59133733A priority Critical patent/JPS6113652A/en
Publication of JPS6113652A publication Critical patent/JPS6113652A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/1919Control of temperature characterised by the use of electric means characterised by the type of controller

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To recover radiation deterioration under a space environment easily by heating a CCD and recovering the radiation deterioration of the CCD utilizing annealing effect. CONSTITUTION:A Peltier element 3 is operated as a cooling element when a device is operated normally as a sensor. Only a temperature control driving circuit 5 and the element 3 are conducted during the suspension period of the device, and the polarity of a temperature control driving signal outputted from the circuit 5 is inverted, thus resulting in heating action to a CCD2 of the element 3. Consequently, the CCD2 can be heated or cooled by changing the polarity of an output from the circuit 5 as required. The CCD2 is heated at a high temperature on the suspension period of the whole device, thus bringing the CCD2 deteriorated by radiation close to an original state and recovering the CCD by an annealing effect.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、電荷結合素子(COD)を検出器とに関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a charge coupled device (COD) and a detector.

〔従来の技術〕[Conventional technology]

従来のこの種の装置に於ては、CCDは常温又は冷却さ
れて使用されていた。従って、従来のこの種の装置に於
てはCODに対する放射、煉劣化の対策としては、CO
Dの同囲にシールドを施す事で対処されるか、又は素子
そのものの耐放射線能力を向上させたCCDを新らたに
開発して搭載する事で対処する方法しかなかった。前者
の方法では装置が極端に重くなると云う欠点があり、後
者の方法では多大の開発費及び耐放射線強化プロセスの
開発と云った技術的困難さを伴う欠点があった。
In conventional devices of this type, the CCD was used at room temperature or cooled. Therefore, in conventional equipment of this type, as a countermeasure against COD radiation and deterioration, COD
The only way to deal with this problem was to put a shield around the area of D, or to develop and install a new CCD with improved radiation resistance of the element itself. The former method has the disadvantage that the device becomes extremely heavy, while the latter method has the disadvantage of requiring a large amount of development cost and technical difficulties in developing a radiation-resistant process.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、CCDの宇宙環境下に於る放射線劣化
を回復させる対策を施した搭載用センサを提供すること
にある。
An object of the present invention is to provide an on-board sensor that takes measures to recover the radiation deterioration of a CCD in a space environment.

〔発明の構成及び作用〕[Structure and operation of the invention]

本発明の搭載用センサは、ベルチェ素子またはヒータ等
を利用する事により、宇宙環境下に於る放射線によりC
CD検出器が劣化した際、検出器そのものを直接高温加
熱し、半導体のアニール効果を利用し放射線で劣化した
検出器を回復させる。
The on-board sensor of the present invention uses a Bertier element or a heater to reduce carbon dioxide caused by radiation in the space environment.
When a CD detector deteriorates, the detector itself is directly heated to a high temperature and the annealing effect of the semiconductor is used to restore the detector that has deteriorated due to radiation.

また、通常のセンサとしての動作時には再びCODをベ
ルチェ素子により冷却して使用する。
Moreover, when operating as a normal sensor, the COD is cooled again by the Vertier element and used.

〔実施例〕〔Example〕

第1図は本発明の実施例を示すブロック図であって、1
は光学系、2はCCD、3はペルチェ素子、4は信号処
理部、5は温度制御駆動回路、6は信号出力端である。
FIG. 1 is a block diagram showing an embodiment of the present invention, 1
2 is an optical system, 2 is a CCD, 3 is a Peltier element, 4 is a signal processing section, 5 is a temperature control drive circuit, and 6 is a signal output terminal.

とれを動作するには、光学部1により集光された対象と
する像を、CCDZ上に照射する。CCD2は照射され
た光を光電変換し、電圧信号を信号処理部4へ出力する
。CCD2を駆動するパルスは、信号処理部4から供給
される。信号処理部4で処理されたセンサ信号は出力端
6に出力される。
To operate the lens, a target image focused by the optical section 1 is irradiated onto the CCDZ. The CCD 2 photoelectrically converts the irradiated light and outputs a voltage signal to the signal processing section 4. Pulses for driving the CCD 2 are supplied from the signal processing section 4 . The sensor signal processed by the signal processing section 4 is output to the output end 6.

ベルチェ素子3は、通常、装置がセンサーとして動作し
ている場合は、冷却素子として動作する。
The Vertier element 3 normally operates as a cooling element when the device is operating as a sensor.

また、その駆動信号は、温度制御駆動回路5から出力さ
れる。従って、装置が休止期間の間に温度制御駆動回路
5とベルチェ素子3のみを通電し、駆動回路5から出力
される温度制御駆動信号の極性を反転する事により、ベ
ルチェ素子3はCCD2に対して加熱の作用をさせる事
が出来る。従って、必要な時期に駆動回路5の出力の極
性を変える事によ勺、CCD2を加熱、冷却が可能とな
る。
Further, the drive signal is output from the temperature control drive circuit 5. Therefore, by energizing only the temperature control drive circuit 5 and the Bertier element 3 during the idle period of the device, and reversing the polarity of the temperature control drive signal output from the drive circuit 5, the Bertier element 3 is connected to the CCD 2. It can have a heating effect. Therefore, it is possible to heat and cool the CCD 2 by changing the polarity of the output of the drive circuit 5 at necessary times.

CCD2を装置全体が体1ヒ期間の時高温加熱する事で
、アニール効果により、放射線で劣化したCCD2を元
の状態に近づけ回復させる事が出来る。
By heating the CCD 2 at a high temperature when the entire device is in its first heat period, the CCD 2 degraded by radiation can be restored to its original state due to the annealing effect.

第2図は本発明のもう一つの実施例を示すブロック図で
あり、第1図の実施例ではベルチェ素子3を冷却と加熱
兼用にしていたが、この第2図の実施例に於ては、ベル
チェ素子3は冷却専用に使い、ヒータ7を加熱専用に使
う。8はヒータ7の駆動回路である。その他の部分の動
作は第1図の実施例と同じである。
FIG. 2 is a block diagram showing another embodiment of the present invention. In the embodiment of FIG. 1, the Bertier element 3 was used for both cooling and heating, but in the embodiment of FIG. , the Vertier element 3 is used exclusively for cooling, and the heater 7 is used exclusively for heating. 8 is a drive circuit for the heater 7. The operation of other parts is the same as the embodiment shown in FIG.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によればCCDを加熱しアニ
ール効果を利用して、CCDの宇宙環境下に於る放射線
劣化を回復出来る利点がある。実施例の第2図に示す如
く通常の場合は、CODの加熱をヒータにより実施する
事により上述の効果が得られる。また、実施例の第1図
に示す如く、CCUの冷却に使用するベルチェ素子を、
ペルチェ駆動信号の極性を反転させる事で、CCDを加
熱すれば、ベルチェ素子のみでヒータを使用せずに前述
の効果が得られる利点がある。
As explained above, according to the present invention, there is an advantage that the radiation deterioration of the CCD in the space environment can be recovered by heating the CCD and utilizing the annealing effect. As shown in FIG. 2 of the embodiment, in the normal case, the above-mentioned effects can be obtained by heating the COD with a heater. In addition, as shown in FIG. 1 of the embodiment, the Bertier element used for cooling the CCU is
If the CCD is heated by inverting the polarity of the Peltier drive signal, there is an advantage that the above-mentioned effect can be obtained using only the Vertier element without using a heater.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図は本発明の実施例を示すブロック図であ
る。 1は光学系、2けCCD13はベルチェ素子、4は信号
処理部、5は温度制御駆動回路、6は出力端、7はヒー
ター、8はヒータ駆動回路。 竿 1 図 手 2 図
FIGS. 1 and 2 are block diagrams showing embodiments of the present invention. 1 is an optical system, 2 CCDs 13 are Bertier elements, 4 is a signal processing section, 5 is a temperature control drive circuit, 6 is an output end, 7 is a heater, and 8 is a heater drive circuit. Rod 1 Figure 2 Figure

Claims (3)

【特許請求の範囲】[Claims] (1)電荷結合素子を検出器とする衛星搭載用センサに
於て、加熱手段により前記電荷結合素子を加熱し、アニ
ール効果によって前記電荷結合素子の放射線劣化を回復
させることを特徴とする放射線劣化減少対策を施した衛
星搭載用センサ。
(1) In a satellite-mounted sensor that uses a charge-coupled device as a detector, the charge-coupled device is heated by a heating means, and radiation degradation of the charge-coupled device is recovered by an annealing effect. Satellite-mounted sensor with reduction countermeasures.
(2)前記加熱手段がペルチェ素子を含むことを特徴と
する特許請求の範囲第1項記載の放射線劣化対策を施し
た搭載用センサ。
(2) The mounting sensor with measures against radiation deterioration as set forth in claim 1, wherein the heating means includes a Peltier element.
(3)前記加熱手段がヒータを含むことを特徴とする特
許請求の範囲第1項記載の放射線劣化対策を施した搭載
用センサ。
(3) The mounting sensor with measures against radiation deterioration as set forth in claim 1, wherein the heating means includes a heater.
JP59133733A 1984-06-28 1984-06-28 Sensor for loading to which radiation deterioration reduction countermeasure is considered Pending JPS6113652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59133733A JPS6113652A (en) 1984-06-28 1984-06-28 Sensor for loading to which radiation deterioration reduction countermeasure is considered

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59133733A JPS6113652A (en) 1984-06-28 1984-06-28 Sensor for loading to which radiation deterioration reduction countermeasure is considered

Publications (1)

Publication Number Publication Date
JPS6113652A true JPS6113652A (en) 1986-01-21

Family

ID=15111639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59133733A Pending JPS6113652A (en) 1984-06-28 1984-06-28 Sensor for loading to which radiation deterioration reduction countermeasure is considered

Country Status (1)

Country Link
JP (1) JPS6113652A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01148365A (en) * 1987-12-02 1989-06-09 Sanyo Kokusaku Pulp Co Ltd Jack for operating measuring valve for coating solution or the like
WO2003054935A1 (en) * 2001-12-10 2003-07-03 Sharp Kabushiki Kaisha Method for fabricating semiconductor device
JP2015065433A (en) * 2013-08-30 2015-04-09 株式会社半導体エネルギー研究所 Imaging apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01148365A (en) * 1987-12-02 1989-06-09 Sanyo Kokusaku Pulp Co Ltd Jack for operating measuring valve for coating solution or the like
WO2003054935A1 (en) * 2001-12-10 2003-07-03 Sharp Kabushiki Kaisha Method for fabricating semiconductor device
US7195948B2 (en) 2001-12-10 2007-03-27 Sharp Kabushiki Kaisha Method for fabricating semiconductor device
CN100407369C (en) * 2001-12-10 2008-07-30 夏普株式会社 Method for fabricating semiconductor device
JP2015065433A (en) * 2013-08-30 2015-04-09 株式会社半導体エネルギー研究所 Imaging apparatus

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