JPS6027143A - Device for continuous heat treatment - Google Patents
Device for continuous heat treatmentInfo
- Publication number
- JPS6027143A JPS6027143A JP13710583A JP13710583A JPS6027143A JP S6027143 A JPS6027143 A JP S6027143A JP 13710583 A JP13710583 A JP 13710583A JP 13710583 A JP13710583 A JP 13710583A JP S6027143 A JPS6027143 A JP S6027143A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- preliminary
- heat treatment
- partition plate
- main chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Heat Treatments In General, Especially Conveying And Cooling (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は半導体基板なLf)熱処理に用いるインライ
ン形の連続熱処理装置の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement of an in-line continuous heat treatment apparatus used for Lf) heat treatment of semiconductor substrates.
第1図は従来の連続熱処理装置の構成例を示す断面図で
、(])は石英管などのチャンバ、(2)は加熱用ヒー
タ、(3)はチャンバft3内の雰囲気を作るためのガ
スの導入口、(4)は半導体基板などの被処理体の搬送
系、(5)は被処理体を搬送系(4)へ搬入する搬入部
、(6)は熱処理後の被処理体を搬出する搬出部、(7
)は被処理体である。Figure 1 is a cross-sectional view showing an example of the configuration of a conventional continuous heat treatment apparatus, in which ( ) is a chamber such as a quartz tube, (2) is a heater, and (3) is a gas for creating an atmosphere in chamber ft3. (4) is a transport system for objects to be processed such as semiconductor substrates, (5) is a loading section for carrying objects to be processed into the transport system (4), and (6) is a port for transporting objects to be processed after heat treatment. unloading section, (7
) is the object to be processed.
この装置では、搬入部(5)から搬入された被処理体(
7)は搬送系(4)によって順次チャンバ(11内へ送
られて熱処理される。搬送系(4)は通常ウオーキング
・ビーム法などで作られている。チャンバft3内に送
られた被処理体(7)はガス導入口(3)から導入され
る反応性または不活性ガスの雰囲気中で熱処理された後
、チャンバ(11を出て搬出部(6)へ送られる。In this device, the object to be processed (
7) are sequentially sent into the chamber (11) by the transport system (4) and heat-treated.The transport system (4) is usually made by a walking beam method.The objects to be processed are sent into the chamber ft3. (7) is heat-treated in an atmosphere of reactive or inert gas introduced from the gas inlet (3), and then exits the chamber (11) and is sent to the discharge section (6).
従来の装置は以上のように構成され、チャンバ(11の
両端は直接外気に開放されているので、ガス導入口(3
)から導入される雰囲気ガスに対して、チャンバI11
の両端から外気が廻り込み雰囲気が乱され易く、また、
塩化水素などの活性ガスをチャンバ(1)に導入したよ
うな場合には、この活性排ガスが外気中に流出し、環境
を劣化させ、これを回復させるには多大の労力が必俄で
あるなどの問題があった。The conventional device is constructed as described above, and since both ends of the chamber (11) are directly open to the outside air, the gas inlet (3
) to the atmospheric gas introduced from the chamber I11.
Outside air circulates from both ends and the atmosphere is easily disturbed, and
When an active gas such as hydrogen chloride is introduced into the chamber (1), this active exhaust gas flows out into the outside air, degrading the environment and requiring a great deal of effort to recover. There was a problem.
この発明は以上のような点に鑑みてなされたもので、チ
ャンバの両端部に予備チャンバを設けて、チャンバ内の
雰囲気が直接外気と接しないようにし、かつ、この予備
チャンバ内の雰囲気ガスを排気できるようにすることに
よって、本体チャンバ内の雰囲気が外気によって乱され
ることがなく、処理用活性ガスによって外気環境に悪影
響を与えない、すぐれた連続熱処理装置を提供するもの
である。This invention was made in view of the above-mentioned points, and includes preliminary chambers provided at both ends of the chamber to prevent the atmosphere inside the chamber from directly contacting the outside air, and to prevent the atmosphere gas in the preliminary chamber from coming into direct contact with the outside air. An excellent continuous heat treatment apparatus is provided in which the atmosphere within the main body chamber is not disturbed by the outside air and the processing active gas does not have an adverse effect on the outside air environment by making it possible to exhaust the air.
第2図はこの発明の一実施例の構成を示す断面図で、第
1図の従来例と同一符号は同等部分を示し、その説明は
省略する、(8)は搬入部側の第1の予備チャンバ、(
9)は搬出部側の第2の予備チャンバ、(lO)は第1
の予備チャンバ(8)と外気との接触を遮断する第1の
仕切板、(II)はチャンバfi+と第1の予備チャン
バ(8)とを仕切る第2の仕切板、(12)は第2の予
備チャンバ(9)と外気とを仕切る第3の仕切板、(1
3)はチャンバ(1)と第2の予備チャンバ(9)とを
仕切る第4の仕切板、(14)は第2の仕切板(++i
に設けられた通孔、(15)は第4の仕切板(131に
設けられた通孔、(16)および(1′7)はそれぞれ
第1の予備チャンバ(8)および第2の予備チャンバ(
9)内のガスを排気する排気口である。FIG. 2 is a cross-sectional view showing the configuration of an embodiment of the present invention. The same reference numerals as those in the conventional example in FIG. 1 indicate equivalent parts, and their explanation will be omitted. Preparatory chamber, (
9) is the second preliminary chamber on the unloading part side, (lO) is the first
(II) is a second partition plate that partitions the chamber fi+ and the first preliminary chamber (8), (12) is a second partition plate that blocks contact between the preliminary chamber (8) of a third partition plate (1) that partitions the preliminary chamber (9) of the
3) is the fourth partition plate that partitions the chamber (1) and the second preliminary chamber (9), and (14) is the second partition plate (++i
(15) is the through hole provided in the fourth partition plate (131), (16) and (1'7) are the first preliminary chamber (8) and the second preliminary chamber, respectively. (
9) This is an exhaust port for exhausting the gas inside.
第3図A〜Dはこの実施例装置の動作過程の一例を示す
部分断面図で、ます、第1の仕切板(1o)を開き、搬
入部(5)(第3図には図示省略)によって被処理体(
7)を第1の予備チャンバ(8)に導入する(第5図A
)。次に、第1の仕切板(lO)を閉じ、第2の仕切板
(11)に設けられた通孔(14)からチャンバ(1)
内の雰囲気ガスを第1の予備チャンバ(8)へ導入し、
第1の予備チャンバ(8)に存在していた気体を排気口
(国から排気する(第3図B)0次に、第2の仕切板(
11)を開き、搬送系(4)によって第1の予備チャン
バ(8)内の被処理体(7)をチャンバ+11内へ導入
する(第3図C)。つづいて、第2の仕切板(川を閉じ
て第1の仕切板(10)を開いて、次の被処理体(7)
を導入する(第3図D)。これは第3図Aの状態と同じ
で、このような操作を繰返して連続熱処理が行われる。Figures 3A to 3D are partial cross-sectional views showing an example of the operating process of this embodiment device, in which the first partition plate (1o) is opened and the loading section (5) (not shown in Figure 3) is shown. The object to be processed (
7) into the first preliminary chamber (8) (Fig. 5A).
). Next, the first partition plate (lO) is closed, and the chamber (1) is opened from the through hole (14) provided in the second partition plate (11).
introducing the atmospheric gas within the chamber into the first preliminary chamber (8);
The gas present in the first preliminary chamber (8) is exhausted from the exhaust port (Fig. 3B).
11) is opened, and the object to be processed (7) in the first preliminary chamber (8) is introduced into the chamber +11 by the transport system (4) (FIG. 3C). Next, close the second partition plate (close the river, open the first partition plate (10), and move the next object to be processed (7).
(Figure 3D). This is the same as the state shown in FIG. 3A, and continuous heat treatment is performed by repeating such operations.
このような連続処理は搬出部側の第2の予備チャンバ(
9)についても同時に行なうことによって、チャンバt
ll内の雰囲気を殆んど乱すことなく連続熱処理が可能
となる。Such continuous processing is carried out in the second preliminary chamber (
9) at the same time, the chamber t
Continuous heat treatment becomes possible without disturbing the atmosphere inside the ll.
なお、上記実施例では予備チャンバ(81、(91内へ
のガスの導入をチャンバ(11からのガスのみに依存し
たが、他の導入口を設け、外部から他のガスを導入する
ようにしてもよい。また、チャンバ【1)内が水素のよ
うに外気との反応が激しい雰囲気の場合には第2の仕切
板(11)および第4の仕切板03)にそれぞれ設けら
れた通孔(I4)およびθのをなくして予備チャンバ+
8+ 、 (9)へは他の導入口から不活性ガスを導入
するようにしてもよい。In addition, in the above embodiment, the introduction of gas into the preliminary chambers (81, (91) depended only on the gas from the chamber (11), but other inlets were provided and other gases were introduced from the outside. In addition, if the inside of the chamber [1] is in an atmosphere such as hydrogen that reacts violently with the outside air, the through holes ( I4) and θ are eliminated and the preliminary chamber +
Inert gas may be introduced into 8+ and (9) from another inlet.
以上説明したように、この発明になる連続熱処理装置で
は熱処理用主チャンバの入口および出口に予備チャンバ
を設け、入口側予備チャンバの入口、出口側予備チャン
バの出口および両予備チャンバと王チャンバとの間にそ
れぞれ仕切板を設けたので、これらの仕切板を適轟に操
作することによって、主チヤンバ内の雰囲気を乱すこと
なく、順次被処理体を搬入、搬出しつつ連続して熱処理
を施すことができる。As explained above, in the continuous heat treatment apparatus according to the present invention, preliminary chambers are provided at the inlet and outlet of the main chamber for heat treatment, and the inlet of the inlet side preliminary chamber, the outlet of the outlet side preliminary chamber, and the connection between both preliminary chambers and the king chamber are provided. Since partition plates are provided between each chamber, by operating these partition plates appropriately, it is possible to carry out heat treatment while sequentially carrying in and out the objects to be treated without disturbing the atmosphere inside the main chamber. I can do it.
第1図は従来の連続熱処理装置の構成例を示す断面図、
第2図はこの発明の一実施例の構成を示す断面図、第3
図はこの実施例装置の動作過程の一例を示す部分断面図
である。
図において、(1)は主チャンバ、(2)は加熱用ヒー
タ、(3)はガス導入口、(4)は被処理体の搬送系、
(7)は被処理体、(8)は第1の予備チャンバ、(9
)は第2の予備チャンバ、i+o) 、 (Ill、
(+21および(13)はそれぞれ第1.第2.第3お
よび第4の仕切板、Q4)は第2の仕切板(11)の通
孔、(16)は第4の仕切板(I3)の通孔、(16)
は第1の予備チャンバ(8)の排気口、07)は第2の
予備チャンバ(9)の排気口である。
なお、図中同一符号は同一または和尚部分を示す。
代理人 大岩増雄
第1図
第2は1
第31聞FIG. 1 is a cross-sectional view showing an example of the configuration of a conventional continuous heat treatment apparatus.
FIG. 2 is a sectional view showing the configuration of an embodiment of the present invention, and FIG.
The figure is a partial sectional view showing an example of the operation process of this embodiment device. In the figure, (1) is the main chamber, (2) is the heater, (3) is the gas inlet, (4) is the conveyance system for the object to be processed,
(7) is the object to be processed, (8) is the first preliminary chamber, (9
) is the second preliminary chamber, i+o) , (Ill,
(+21 and (13) are the first, second, third and fourth partition plates respectively, Q4) is the through hole of the second partition plate (11), (16) is the fourth partition plate (I3) through hole, (16)
07) is the exhaust port of the first auxiliary chamber (8), and 07) is the exhaust port of the second auxiliary chamber (9). Note that the same reference numerals in the figures indicate the same or similar parts. Agent Masuo Oiwa Figure 1 Figure 2 1 31st hearing
Claims (3)
王チャンバ内において上記処理体にP9Ts雰囲気の下
に熱処理を施すものにおいて、上記主チャンバの入口側
および出口側にそれぞれ上記主チャンバに連接して上記
搬送系の他の一部を取凹むように設けられた第1および
第2の予備チャンバ、上記第1の予備チャンバへの上記
搬送系に沿う入口に設けられ上記第1の予備チャンバ内
と外気とを仕切る第1の仕切板、上記王チャンバと上記
第]の予備チャンバとの間に設けられ両者を仕切る第2
の仕切板、上記第2の予備チャンバからの上記搬送系に
沿う出口に設けられ上記第2の予備チャンバと外気とを
仕切る第3の仕切板、及び上記主チャンバと単2の予備
チャンバとの間に設けられ両者を仕切る8#!4の仕切
板を備え、上記第1および第2の仕切板を又互に開閉し
て上記被処理体を上記第1の予備チャンバを介して主チ
ャンバへ搬入し、上記第3および第4の仕切板を交互に
開閉して上記被処理体を上記主チャンバから上記第2の
予備チャンバを介して搬出するようにしたことを特徴と
する連続熱処理装置。(1) A tr surrounding a part of the transport system that sequentially transports objects to be processed
In the case where the processing body is subjected to heat treatment in a P9Ts atmosphere in the main chamber, another part of the transport system is recessed on the inlet side and the outlet side of the main chamber, respectively, in connection with the main chamber. first and second preparatory chambers provided, a first partition plate provided at an entrance along the conveyance system to the first preparatory chamber and partitioning the inside of the first preparatory chamber from outside air, and the king chamber. and the above-mentioned [second] preliminary chamber, and partitions the two.
a third partition plate provided at the outlet along the conveyance system from the second preliminary chamber and partitioning the second preliminary chamber from outside air; and a third partition plate between the main chamber and the single double preliminary chamber. 8# is installed in between and separates the two! 4 partition plates, the first and second partition plates are also opened and closed to transport the object to be processed into the main chamber via the first preliminary chamber, and the third and fourth partition plates are A continuous heat treatment apparatus characterized in that the object to be processed is carried out from the main chamber through the second preliminary chamber by alternately opening and closing partition plates.
口を、第2゛および第4の仕切板にけそれぞれ主チャン
バに通じる通孔を備え、上記第2または第4の仕切板を
開くときにはこれに先立って上記通孔を通じて上記主チ
ヤンバ内の雰囲気ガスを導入してそれぞれ上記第1また
は第2の予備チャンバ内に存在した気体をそれぞれの上
記排気口から排出するようにしたことを特徴とする特許
請求の範囲第1項記載の連続熱処理装置。(2) The first and second auxiliary chambers each have an exhaust port, and the second and fourth partition plates each have a through hole that leads to the main chamber, and the second or fourth partition plate is opened. Sometimes, prior to this, atmospheric gas in the main chamber is introduced through the through hole, and the gas present in the first or second preliminary chamber is discharged from the respective exhaust ports. A continuous heat treatment apparatus according to claim 1.
口および外部からのガス導入口を備え、第2または第4
の仕切板を開くときには、これに先立って上記ガス導入
口から主チヤンバ内の雰囲気に怒影響のない気体を導入
してそれぞれ上記第1またけ第2の予備チャンバ内に存
在した気体をそれぞれの上記排気口から排出するように
したことを特徴とする特許請求の範囲第1項記載の連続
熱処理装置。(3) Both the first and second preliminary chambers are equipped with an exhaust port and a gas inlet from the outside, and the second or fourth
Before opening the partition plate, a gas that does not have an adverse effect on the atmosphere in the main chamber is introduced from the gas inlet to remove the gas present in the first and second preliminary chambers. The continuous heat treatment apparatus according to claim 1, characterized in that the exhaust is discharged from the exhaust port.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13710583A JPS6027143A (en) | 1983-07-25 | 1983-07-25 | Device for continuous heat treatment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13710583A JPS6027143A (en) | 1983-07-25 | 1983-07-25 | Device for continuous heat treatment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6027143A true JPS6027143A (en) | 1985-02-12 |
Family
ID=15190965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13710583A Pending JPS6027143A (en) | 1983-07-25 | 1983-07-25 | Device for continuous heat treatment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6027143A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5482971A (en) * | 1977-12-14 | 1979-07-02 | Mitsubishi Electric Corp | Heat diffusion furnace of semiconductor producing device |
JPS5628637A (en) * | 1979-08-16 | 1981-03-20 | Shunpei Yamazaki | Film making method |
-
1983
- 1983-07-25 JP JP13710583A patent/JPS6027143A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5482971A (en) * | 1977-12-14 | 1979-07-02 | Mitsubishi Electric Corp | Heat diffusion furnace of semiconductor producing device |
JPS5628637A (en) * | 1979-08-16 | 1981-03-20 | Shunpei Yamazaki | Film making method |
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