JPS60167450A - Microwave sealed semiconductor element - Google Patents

Microwave sealed semiconductor element

Info

Publication number
JPS60167450A
JPS60167450A JP59021961A JP2196184A JPS60167450A JP S60167450 A JPS60167450 A JP S60167450A JP 59021961 A JP59021961 A JP 59021961A JP 2196184 A JP2196184 A JP 2196184A JP S60167450 A JPS60167450 A JP S60167450A
Authority
JP
Japan
Prior art keywords
dielectric
loss
microwave
semiconductor chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59021961A
Other languages
Japanese (ja)
Inventor
Hideki Furubayashi
秀樹 古林
Kenji Takahashi
高橋　建慈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59021961A priority Critical patent/JPS60167450A/en
Publication of JPS60167450A publication Critical patent/JPS60167450A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To enable the reduction in parasitic reactance in frequency bands of microwaves and millimeter waves and the inhibition of change with time by coating the part of semiconductor exposure with an electric low loss solidified dielectric. CONSTITUTION:As an example, an adhesive such as an Araldite 106 or an Araldite 101 is used for the above-mentioned dielectric 6 electrically low in loss and relatively smaller in dielectric constant. As an example, a microwave beam lead diode is used for a semiconductor chip 1. Since the part of semiconductor chip 1 exposure is coated with said dielectric 6 in the titled element of this construction, chemical reaction with components in the air can be inhibited, resulting in the reduction in change with time. It is enough that the adhesive used as this dielectric 6 is electrically low in loss: relatively smaller dielectric constant is desired, and the preformance of these corresponds to a frequency band that is used. As an example, a dielectric loss of approx. 10<-3> is necessary at a frequency of 1GHz or more.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明はマイクロ波およびミリ波周波数の超高周波領
域において使用されるマイクロ波シール半導体素子に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a microwave sealed semiconductor device used in the ultra-high frequency region of microwave and millimeter wave frequencies.

〔従来　技術〕[Conventional technology]

第１図（、）および第１図（ｂ）はそれぞれ従来のマイ
クロ波ビームリード形半導体素子を示す断面図であり、
特に第１図（、）はビームリードダイオードを示し、第
１図（ｂ）はケース入りマイクロ波ダイオードを示す。FIG. 1(,) and FIG. 1(b) are cross-sectional views showing a conventional microwave beam lead type semiconductor device, respectively.
In particular, FIG. 1(,) shows a beam lead diode, and FIG. 1(b) shows a cased microwave diode.

これらの図において、１はダイオードチップ々どの半導
体チップ、２は入力端子、３は出力端子、４は基板、５
はケース人ｐマイクロ波ダイオードである。In these figures, 1 is a semiconductor chip such as a diode chip, 2 is an input terminal, 3 is an output terminal, 4 is a substrate, and 5 is a semiconductor chip.
is the case p microwave diode.

これらのマイクロ波領域およびミリ波領域で使用される
半導体素子は第１図（、）に示すように、半導体チップ
に端子を接続し、半導体部分が露出した１ま使用されて
いるが、第１図（ｂ）に示すようにセラミックガどの高
誘電率誘電体で半導体チップを覆うものが使用されてい
る。Semiconductor elements used in these microwave and millimeter wave regions are used with terminals connected to a semiconductor chip and the semiconductor part exposed, as shown in Figure 1 (,). As shown in Figure (b), a semiconductor chip is covered with a dielectric material having a high dielectric constant, such as ceramic material.

しかしながら、従来のマイクロ波ビームリード形半導体
素子では、特に、半導体部分が露出しているものではそ
の露出部分の化学変化による経時変化の影響によシ特性
劣化が生じる。また、半導体チップがケース入りのもの
では３０ＧＨｚ以上のミリ波周波数帯ではケースに起因
する寄生リアクタンスの影響により特性が劣化する欠点
があった０ 〔発明の概要〕 したがって、この発明の目的はマイクロ波およびミリ波
周波数帯で寄生リアクタンスを減することができ、しか
も経時変化を抑制することができるマイクロ波シール半
導体素子を提供するものである。However, in conventional microwave beam lead type semiconductor devices, especially those in which semiconductor portions are exposed, characteristic deterioration occurs due to changes over time due to chemical changes in the exposed portions. In addition, in cases where the semiconductor chip is housed in a case, there is a drawback that the characteristics deteriorate in the millimeter wave frequency band of 30 GHz or higher due to the influence of parasitic reactance caused by the case. Another object of the present invention is to provide a microwave-sealed semiconductor element that can reduce parasitic reactance in the millimeter wave frequency band and can suppress changes over time.

このような目的を達成するため、この発明は半導体か露
出している部分を電気的低損失凝固形誘電体で榎うもの
であシ、以下実施例を用いて詳細に説明する。In order to achieve this object, the present invention covers the exposed portion of the semiconductor with an electrically low-loss solidified dielectric, and will be described in detail below using examples.

〔発明の実施例」 第２図（、）および第２図（ｂ）はこの発明に係るマイ
クロ波シール半導体素子の一実施例を示す平面図およヒ
ソ（７）Ａ−Ａ’断面図である。同図において６は電気
的に低損失であシ、かつ誘電率が比較的低い、いわゆる
電気的低損失凝同形誘電体である。[Embodiment of the Invention] Figures 2(a) and 2(b) are a plan view and a sectional view taken along line A-A' (7) of the microwave seal semiconductor device according to the present invention. be. In the figure, reference numeral 6 denotes a so-called electrically low loss condensed dielectric which has a relatively low electrical loss and a relatively low dielectric constant.

なお、この電気的低損失凝固形誘電体６は一例としてア
ラルダイト１０６、アラルダイト１０１（チパカイギ社
の商品名）ｆＸ、どの接着剤が用いられる。For the electrically low loss solidified dielectric 6, for example, Araldite 106, Araldite 101 (trade name of Chipakaigi Co., Ltd.) fX, or any other adhesive is used.

また、半導体チップ１は一例としてマイクロ波ビームリ
ードダイオードが使用される。Further, as the semiconductor chip 1, a microwave beam lead diode is used, for example.

次に、上記格成によるマイクロ波シール半導体素子では
半導体チップ１の露出する部分が電気的低損失凝固形誘
電体６で覆われるため、空気中の成分との化学反応を抑
制することができ、経時変化を少なくすることができる
。Next, in the microwave-sealed semiconductor element using the above-described lattice, the exposed portion of the semiconductor chip 1 is covered with the electrically low-loss solidified dielectric 6, so that chemical reactions with components in the air can be suppressed. Changes over time can be reduced.

なお、十ハ［；電気的低損失凝固形誘電体６として使用
できる接着剤としては電気的必要条件を満足していれば
使用することが可能である。また、このマイクロ波シー
ル半導体素子を回路に組み込む場合には接着剤の誘電率
に起因する回路定数を正確に把握することはもちろんで
ある。そこで、電気的低損失凝固形誘電体６の使用量お
よび使用形状は均一になるように制御する必要があるこ
とはもちろんである。また、実施例では半導体チップ１
としてマイクロ波ビームリードダイオードについて説明
したが、ビームリードトランジスタなどの半導体につい
ても同様に適用できることはもちろんである。また、電
気的低損失凝同形誘電体６として使用できる接着剤は電
気的低損失であればよく、誘電率が比較的小さいことが
望まれるが、これらの性能は使用する周波数帯に対応す
るものである。−例として、周波数ＩＧＨ２以上では誘
電損失１０−３程度が必要であり、誘電率は１０以下が
必要である。周波数が１００ＧＨｚ程度となると、誘電
損失は同程度のものしか実在しないので、やむを得ない
が、誘電率は５以下程度が必要となることはもちろんで
ある。Note that adhesives that can be used as the electrically low loss solidified dielectric 6 can be used as long as they satisfy the electrical requirements. Furthermore, when this microwave sealed semiconductor element is incorporated into a circuit, it is of course necessary to accurately understand the circuit constant due to the dielectric constant of the adhesive. Therefore, it goes without saying that it is necessary to control the amount and shape of the electrically low-loss solidified dielectric material 6 so that they are uniform. In addition, in the embodiment, the semiconductor chip 1
Although the description has been made regarding a microwave beam lead diode, it goes without saying that the invention can be similarly applied to semiconductors such as beam lead transistors. Furthermore, the adhesive that can be used as the electrically low-loss condensed dielectric material 6 only needs to have a low electrical loss, and it is desirable that the dielectric constant be relatively small, but these properties should correspond to the frequency band in which it is used. It is. - For example, at a frequency of IGH2 or more, a dielectric loss of about 10-3 is required, and a dielectric constant of 10 or less is required. When the frequency is about 100 GHz, there are only dielectric losses of the same level, so it goes without saying that the dielectric constant needs to be about 5 or less.

〔発明の効果〕〔Effect of the invention〕

以上詳細に説明したように、この発明に係るマイクロ波
シール半導体素子によればマイクロ波およびミリ波周波
数帯領域において格段に寄生リアクタンスの少ない半導
体素子を実現することができるので、マイクロ波および
ミリ波応用回路が一段と充実し、特性が向上するうえ長
寿命となるなどの効果がある。As explained in detail above, according to the microwave sealed semiconductor device according to the present invention, it is possible to realize a semiconductor device with significantly less parasitic reactance in the microwave and millimeter wave frequency bands. The application circuits are further enriched, the characteristics are improved, and the lifespan is extended.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（、）および第１図（ｂ）はそれぞれ従来のマイ
クロ波ビームリード形半導体素子を示す断面図、第２図
（、）および第２図（ｂ）はこの発明に係るマイクロ波
シール半導体素子の一実施例を示す平面図およびそのＡ
−Ａ’断面図である。 １Φ＠−１半導体チップ　２　畳１１１１６入力端子、
３・・・・出力端子、４・−・・基板、５・・う・ケー
ス入りマイクロ波ダイオード、６・・・・電気的低損失
凝固形誘電体。、 特許出願人　日本電気株式会社 代理人山川政樹（ほか２名） −〇−FIG. 1(,) and FIG. 1(b) are cross-sectional views showing a conventional microwave beam lead type semiconductor device, respectively, and FIG. 2(,) and FIG. 2(b) are microwave seals according to the present invention. A plan view showing an example of a semiconductor device and its A
-A' sectional view. 1Φ@-1 semiconductor chip 2 Tatami 11116 input terminal,
3... Output terminal, 4... Substrate, 5... Case-encased microwave diode, 6... Electrical low loss solidified dielectric. , Patent applicant Masaki Yamakawa, agent of NEC Corporation (and 2 others) −〇−

Claims (1)

【特許請求の範囲】[Claims] 半導体チップに単数または複数の端子を有するマイクロ
波ビームリード形半導体素子において、半導体が露出し
ている部分を電気的低損失凝固形誘電体で覆ったことを
特徴とするマイクロ波シール半導体素子。1. A microwave beam-lead semiconductor device having one or more terminals on a semiconductor chip, characterized in that an exposed portion of the semiconductor is covered with an electrically low-loss solidified dielectric.
JP59021961A 1984-02-10 1984-02-10 Microwave sealed semiconductor element Pending JPS60167450A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59021961A JPS60167450A (en) 1984-02-10 1984-02-10 Microwave sealed semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59021961A JPS60167450A (en) 1984-02-10 1984-02-10 Microwave sealed semiconductor element

Publications (1)

Publication Number Publication Date
JPS60167450A true JPS60167450A (en) 1985-08-30

Family

ID=12069662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59021961A Pending JPS60167450A (en) 1984-02-10 1984-02-10 Microwave sealed semiconductor element

Country Status (1)

Country Link
JP (1) JPS60167450A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027548A (en) * 1988-06-27 1990-01-11 Mitsubishi Electric Corp Microwave integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027548A (en) * 1988-06-27 1990-01-11 Mitsubishi Electric Corp Microwave integrated circuit device

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