JPS60121756A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS60121756A JPS60121756A JP23043983A JP23043983A JPS60121756A JP S60121756 A JPS60121756 A JP S60121756A JP 23043983 A JP23043983 A JP 23043983A JP 23043983 A JP23043983 A JP 23043983A JP S60121756 A JPS60121756 A JP S60121756A
- Authority
- JP
- Japan
- Prior art keywords
- unit cell
- cells
- aggregates
- unit
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はマスタスライス方式の半導体集積回路装置に関
するもので、特に多品種少量生産が行われる半導体集積
回路装置に使用されるものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a master slice type semiconductor integrated circuit device, and is particularly used for semiconductor integrated circuit devices that are produced in a wide variety of small quantities.
マスタスライス方式は特に多品種少量生産が行われる大
規模集積回路(LSI)に多用されるチップ構成法であ
って、第1図の平面図に示すようにチップ1上にあらか
じめ抵抗、トラ7ジスタなどから成る基本素子集合体で
ある単位セル2を複数個配列したカラム3を所定の配線
領域4を隔てて複数個配置したものを使用する。このよ
うなセル2内およびカラム3内の配線によってロジック
ユニツl?作成し、さらに配線領域4においてこのロジ
ックユニット間の配線を行うことにより、所望の回路が
容易に形成できる。The master slicing method is a chip construction method that is often used especially in large-scale integrated circuits (LSI) that are produced in high-mix, low-volume production. A plurality of columns 3 in which a plurality of unit cells 2, which are basic element aggregates such as the like, are arranged are arranged with a predetermined wiring region 4 in between. Such wiring within cell 2 and column 3 allows the logic unit l? By creating and further wiring between the logic units in the wiring area 4, a desired circuit can be easily formed.
以上のような単位セルの集合体(カラム)は従来はチッ
プ内で同一形状をしておりしかも同一方向に並べられて
いる。Conventionally, the aggregates (columns) of unit cells as described above have the same shape within a chip and are arranged in the same direction.
しかしながら、このようなマスタスライス方式の半導体
集積回路装置においては、所望の半導体集積回路を得る
ためにロジックユニットの配置および相互配置l1行う
と、中心部のロジックユニットは周囲に配置されたロジ
ックユニットに対して配線が必要なのに対し1周縁部に
配置されたロジックユニットの配線は中心部に向うこと
になるため、チップの中央はど配線本数が多くなる。こ
のように中央部に配線が集中すると配線を自動化するこ
とが困雑になるばかりか、信頼性の低下を引き起し、−
!た配線集中を避けるために配線の迂回が必要となって
インピーダンスの増加に伴う特性の低下を生じるという
問題がある。However, in such a master slice type semiconductor integrated circuit device, when the logic units are arranged and mutually arranged l1 in order to obtain a desired semiconductor integrated circuit, the logic unit in the center is connected to the logic units arranged in the periphery. On the other hand, although wiring is required, the wiring of the logic unit arranged on one periphery is directed toward the center, so the number of wiring is increased at the center of the chip. When wiring is concentrated in the center like this, it not only becomes difficult to automate wiring, but it also causes a decrease in reliability.
! In order to avoid the concentration of wiring, it is necessary to take a detour of the wiring, which causes a problem in that characteristics deteriorate as impedance increases.
また、従来のマスタスライス方式の半導体集積回路装置
においては単位セル集合体はすべて同一方向に並べられ
ているから、チップ中の単位セルの配置状況は各辺から
見て異り、その結果入力部又は出力部がX辺側に存在す
る場合とこれに直角なy辺側に存在する場合とで電気的
特性が異なる場合が生ずるという問題もある。In addition, in a conventional master slice type semiconductor integrated circuit device, all unit cell aggregates are arranged in the same direction, so the arrangement of the unit cells in the chip differs when viewed from each side, and as a result, the input section Another problem is that the electrical characteristics may be different depending on whether the output section is located on the X side or on the Y side perpendicular thereto.
上記発明は上記率1^に鑑みてなされたものでチップ中
心の配線集中を避げ、またチップの各辺から見た単位セ
ルの配列状況を等しくすることができる半導体集積回路
装置を提供することを目的とする。The above invention has been made in view of the above ratio 1^, and an object of the present invention is to provide a semiconductor integrated circuit device that can avoid wiring concentration at the center of the chip and make the arrangement of unit cells equal when viewed from each side of the chip. With the goal.
上記目的達成のため5本発明においてはマスタスライス
方式の半導体集積回路装置において、複数の単位セル集
合体をX方向およびY方向に単位セルの個数が均等にな
るようにチップ中心に関して対称に配置すると共にチッ
プ中心から遠ざかるにしたがって各単位セル集合体に含
まれる単位セルの個数が増加し、かつ単位セル集合体間
の間隔が増加するようにしており、配線密度をチップ内
でほぼ均一にすることができ、またチップ方向の相違に
よる特性のばらつきを招かないものである。To achieve the above object, in the present invention, in a master slice type semiconductor integrated circuit device, a plurality of unit cell aggregates are arranged symmetrically with respect to the center of the chip so that the number of unit cells is equal in the X direction and the Y direction. In addition, the number of unit cells included in each unit cell aggregate increases as the distance from the center of the chip increases, and the interval between unit cell aggregates increases, making the wiring density almost uniform within the chip. Furthermore, variations in characteristics due to differences in chip direction are not caused.
以下、第2図ないし第4図を参照しながら本発明の実施
例のいくつかを詳細に説明する。第2図ハ本発明にかか
る半導体集積回路装置の単位セル配置を示す平面図であ
って、単位セル12を複数個並べた単位セル集合体13
をチップ中心0の囲りに横力間(X方向)および縦方向
(X方向)に配置したものである。すなわち、中心0か
ら距離11だけ隔てた左右にN1個の単位セルを有する
長方形の単位セル集合体13LIおよび13FIIYそ
の長辺方向がX方向に一致するように配置し、これらの
上方および下方に距離Llだけ隔てて長方形の単位セル
集合体13u、および]:3pu Yその長辺方向がX
方向に一致するように配置し、以鎌同様にくり返してX
方向およびX方向に単位セル集合体13を配置している
。第2図から明らかなように中心Oから離れるにしたが
って単位セル集合体13に含まれる単位セル12の個数
は増加しており、中心から/!1の距離にある1番目の
単位セル集合体に含まれる単位セルの個数Nと、Ll
(中心からは4+、)離れて隣接する辻1番目の単位セ
ル集合体に含まれろ単位セルの個数Nj刊との間には
Ni+t ) N<かつe汗、〉ハ
の関係がある。また、同方向を向いた隣接する単位セル
集合体間の間隔りに関しては同様にLi + + >
Li
の関係があり、単位セル12の個数の多い周縁部の単位
セル集合体はど多くの配線領域が確保されている。Hereinafter, some embodiments of the present invention will be described in detail with reference to FIGS. 2 to 4. FIG. 2C is a plan view showing the unit cell arrangement of the semiconductor integrated circuit device according to the present invention, and is a unit cell assembly 13 in which a plurality of unit cells 12 are arranged.
are arranged around the chip center 0 in the lateral force (X direction) and in the vertical direction (X direction). That is, rectangular unit cell aggregates 13LI and 13FIIY having N1 unit cells on the left and right sides separated by a distance of 11 from the center 0 are arranged so that their long sides coincide with the X direction, and there are distances above and below them. Rectangular unit cell aggregates 13u separated by Ll, and ]:3pu Y whose long side direction is
Place it so that it matches the direction, repeat the same way as the sickle, and press X.
Unit cell aggregates 13 are arranged in the direction and the X direction. As is clear from FIG. 2, the number of unit cells 12 included in the unit cell aggregate 13 increases as the distance from the center O increases, and the number of unit cells 12 increases from the center to /! The number N of unit cells included in the first unit cell aggregate located at a distance of 1, and Ll
There is a relationship between the number Nj of unit cells included in the unit cell aggregate at the first intersection (4+ from the center) and the relationship Ni+t) N<and e,>c. Similarly, regarding the spacing between adjacent unit cell aggregates facing the same direction, Li + + >
There is a relationship of Li, and a large amount of wiring area is secured for unit cell aggregates at the periphery where the number of unit cells 12 is large.
第3図は本発明の他の実施例を示す平面図であって、第
2図においては中心から同一準位の単位セル集合体13
であってもX方向に配置されたものとX方向に配置され
たものとで含まれる単位セル120個数が異っていたが
、この実施例では同一順位にある単位セル集合体13倶
1 、13’Ll 、 13’ul、1絢はすべて同一
個数の単位セルを含む同一形状の長方形とし、各単位セ
ル集合体はそれぞれ正方形の一頂点を含んで各辺を構成
するように配置されている。この実施例では単位セル集
合体は中心に関して点対称に配置lされている。FIG. 3 is a plan view showing another embodiment of the present invention, and in FIG. 2, unit cell aggregates 13 at the same level from the center are shown.
However, in this example, the number of unit cells 120 included in the one arranged in the X direction and the one arranged in the X direction was different, but in this example, the unit cell aggregates 131, 13'Ll, 13'ul, and 1aya are all rectangles of the same shape containing the same number of unit cells, and each unit cell aggregate is arranged so that each side includes one vertex of the square. . In this embodiment, the unit cell aggregates are arranged symmetrically with respect to the center.
第4図はさらに他の実施例を示す平面図であって、これ
によれば、X方向およびX方向に等長の腕を有する鉤状
の単位セル集合体I3“乞正方形の各頂点を含むように
配置したものである。この実施例では単位セル集合体は
中心Rに関し線対称に配置されている。FIG. 4 is a plan view showing still another embodiment, in which a hook-shaped unit cell aggregate I3 having arms of equal length in the X direction and in the X direction includes each vertex of a square. In this embodiment, the unit cell aggregates are arranged line-symmetrically with respect to the center R.
本発明は以上の実施例に限られるものではなく。The present invention is not limited to the above embodiments.
接舷の単位セル集合体χX方向およびX方向に単位セル
の個数が均等になっており、チップ中心からの距離に応
じて各単位セル集合体に含まれる単位セルの個数が増加
し、かつ単位セル集合体間のの間隔が増加するようなマ
スタスライスパターンを有する半導体集積回路装置にす
べて適用される。The number of unit cells is equal in the X and X directions, and the number of unit cells included in each unit cell assembly increases according to the distance from the chip center. The present invention applies to all semiconductor integrated circuit devices having a master slice pattern in which the spacing between cell aggregates increases.
以上のように1本発明にかかる半導体集積回路装置によ
れば、複数の単位セル集合体をX方向およびX方向に単
位セルの個数が均等になるようにチップ中心に関して対
称に配置すると共にチップ中心から、1tざかるにした
がって各単位セル集合体に含まれろ部位セルの個数が増
加し、かつ単位セル果合体間の1■隔が増加するような
マスタスライスパターン乞有しているので、中心部は配
線すべき単位セルの個数が少ないため配線数が少なく。As described above, according to the semiconductor integrated circuit device according to the present invention, a plurality of unit cell aggregates are arranged symmetrically with respect to the chip center so that the number of unit cells is equal in the X direction and the Since we have a master slice pattern in which the number of site cells included in each unit cell aggregate increases as 1t increases, and the 1-inch interval between unit cell aggregates increases, the center The number of wiring is small because there are few unit cells to be wired.
また周縁部には単位セルの個数が多くなる反面十分な配
線領域が確保されており、配線の集中やこれケ避けろた
めの迂回等が不要となって特性の低下や信頼性の低下を
招くことがない。また、単位セルの配置状況がチップの
X方向から見た場合とX方向から見た場合とで同様にな
っているので。In addition, although the number of unit cells increases at the periphery, a sufficient wiring area is secured, and there is no need for concentration of wiring or detours to avoid this, which can lead to deterioration of characteristics and reliability. There is no. Furthermore, the arrangement of the unit cells is the same when viewed from the X direction of the chip and when viewed from the X direction.
入力部や出力部がいずれの方向に存在しようとも特性の
ばらつきを生じにくいものである。No matter which direction the input section or output section is located, variations in characteristics are unlikely to occur.
第1図は従来のマスタスライス方式半導体集積回路装置
のマスタスライスパターンを示す平面図。
第2図ないし旭4図は本発明にかかる半導体集積回路装
置における各種実施例にかかるマスタスライスパターン
乞示す平面図である。
1.11・・・チップ、2.12・・・単位セル、3・
・・カラム、13 、13’ 、 13“・・・単位セ
ル集合体。
出願人代理人 猪 股 清
b I 図
朽2 頻
ら 3 圓
ら4 閃FIG. 1 is a plan view showing a master slice pattern of a conventional master slice type semiconductor integrated circuit device. 2 to 4 are plan views showing master slice patterns of various embodiments of the semiconductor integrated circuit device according to the present invention. 1.11...chip, 2.12...unit cell, 3.
...Column, 13, 13', 13"... unit cell aggregate. Applicant's agent Kiyoshi Inomatab I Zukuku2 Takara 3 En et al.4 Sen
Claims (1)
上に並べた半導体集積回路装置において。 前記複数の単位セル集合体なX方向およびy方向に前記
単位セルの個数が均等になるように前記チップ中心に関
して対称に配置すると共に、前記チップ中心から遠ざか
るにしたがって前記各単位セル集合体に含まれる前記単
位セルの個数が増加し、かつ前記単位セル集合体間の間
隔が増加するようにしたことを特徴とする半導体集積回
路装置。[Scope of Claim] A semiconductor integrated circuit device in which a plurality of unit cell aggregates each having a plurality of unit cells arranged on a chip are arranged. The plurality of unit cell aggregates are arranged symmetrically with respect to the chip center so that the number of unit cells is equal in the X direction and the y direction, and the unit cells are included in each unit cell aggregate as the distance from the chip center increases. 1. A semiconductor integrated circuit device, wherein the number of said unit cells is increased, and the interval between said unit cell aggregates is increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23043983A JPS60121756A (en) | 1983-12-06 | 1983-12-06 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23043983A JPS60121756A (en) | 1983-12-06 | 1983-12-06 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60121756A true JPS60121756A (en) | 1985-06-29 |
Family
ID=16907916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23043983A Pending JPS60121756A (en) | 1983-12-06 | 1983-12-06 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60121756A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6298746A (en) * | 1985-10-21 | 1987-05-08 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Integrated circuit chip |
JPS6298745A (en) * | 1985-10-21 | 1987-05-08 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Integrated circuit chip |
JPS63254744A (en) * | 1987-04-10 | 1988-10-21 | Matsushita Electric Ind Co Ltd | Semiconductor ic device |
-
1983
- 1983-12-06 JP JP23043983A patent/JPS60121756A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6298746A (en) * | 1985-10-21 | 1987-05-08 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Integrated circuit chip |
JPS6298745A (en) * | 1985-10-21 | 1987-05-08 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Integrated circuit chip |
US4731643A (en) * | 1985-10-21 | 1988-03-15 | International Business Machines Corporation | Logic-circuit layout for large-scale integrated circuits |
US4746966A (en) * | 1985-10-21 | 1988-05-24 | International Business Machines Corporation | Logic-circuit layout for large-scale integrated circuits |
JPH0573275B2 (en) * | 1985-10-21 | 1993-10-14 | Ibm | |
JPS63254744A (en) * | 1987-04-10 | 1988-10-21 | Matsushita Electric Ind Co Ltd | Semiconductor ic device |
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