JPS5950522A - Projection and exposure device - Google Patents

Projection and exposure device

Info

Publication number
JPS5950522A
JPS5950522A JP57160986A JP16098682A JPS5950522A JP S5950522 A JPS5950522 A JP S5950522A JP 57160986 A JP57160986 A JP 57160986A JP 16098682 A JP16098682 A JP 16098682A JP S5950522 A JPS5950522 A JP S5950522A
Authority
JP
Japan
Prior art keywords
reticle
light
optical system
glass substrate
foreign matter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57160986A
Other languages
Japanese (ja)
Inventor
Hiroshi Maejima
前島 央
Susumu Komoriya
進 小森谷
Nobuyuki Irikita
信行 入来
Hiroto Nagatomo
長友 宏人
Keizo Nomura
敬三 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57160986A priority Critical patent/JPS5950522A/en
Publication of JPS5950522A publication Critical patent/JPS5950522A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Projection-Type Copiers In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Warehouses Or Storage Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To detect the existence of a foreign matter by a method wherein paralllel light irradiates the surface of a reticle and irregularly reflected light is detected. CONSTITUTION:The pattern of the reticle 1 forming the prescribed pattern is projected to be exposed on a wafer 2. The wafer 2 is put on an X-Y table 7, and the reticle pattern is exposed in a checkered pattern. A foreign matter detecting optical system 14 takes out the light of a light source a half-mirror 15 provided on a shutter 13, and the reticle 1 is irradiated from the parallel direction with the surface thereof. A sensor 22 detects irregularly ly reflected light from the place generating the foreign matter or a crack, and enables detection of the existence of foreign matter, etc.

Description

【発明の詳細な説明】 本発明に半導体装置の製造装置とじて用いて好適な投影
露光装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a projection exposure apparatus suitable for use as a semiconductor device manufacturing apparatus.

半導体装置の製造1桿の一つであるホ) IJソゲラフ
イエ程では、レチクルやマスクのパターン奮投影露光装
置?用いてウェーハ表面のホトレジスト上に投影露光し
ているが、このとき1/チクルがマスクの表面に異物が
付着しているとこれがそのマ筐つェーハ上に結像露光さ
れることになり、所謂ハターン欠陥が発生する。特にレ
チクルやマスクのパターンをウェーハ上にステップアン
ドリピート的に露光する場合には、各素子に異物像の欠
脩が生じることになシ致命的なものとなる。
IJ Sogerahuie, which is one of the main components of semiconductor device manufacturing, is an exposure device that projects patterns on reticles and masks. At this time, if there is foreign matter attached to the surface of the mask, it will be imaged onto the wafer and exposed, so-called. Hattern defects occur. In particular, when a reticle or mask pattern is exposed on a wafer in a step-and-repeat manner, defects in foreign object images may occur in each element, which is fatal.

このため、レチクルやマスクに付着した異物音検出して
これを取除くことが必要と芒れるか、従来の検出装置で
は充分に満足することはできない。
For this reason, it is necessary to detect the sound of foreign objects attached to the reticle or mask and remove them, but conventional detection devices cannot fully satisfy this problem.

向えば、近年最も進んだものとしては、レグ−クルやマ
スク(以下、レチクルで代衣する)を投影露光装置にセ
ットする直前位1百でレヂークルの六外面にレーザ光束
を当射させ、これをレチクルIJ i+++ ’(r走
査芒せながらその反射光金光奄素子にて検出し、この反
射光量の変化?検知することによりAA″0IJk検出
するものが実用化されている。
In recent years, the most advanced method is to irradiate the six outer surfaces of the reticule with a laser beam just before setting the reticle or mask (hereinafter referred to as reticle) in the projection exposure device. A reticle IJ i+++' (r) is used to detect AA''0IJk by scanning the reticle IJ i+++' (r) with its reflected light metal element, and by detecting changes in the amount of reflected light.

しかしながらこの装置では、異物検出後に露光装置に1
/チクルをセットする際や露光の継続中等に新たに付着
する異物全検出することができないという大きな問題が
ある。また、曲の問題として、レーザ走査装置およびこ
れに追従作動される光電素子等の装置機構が極めて複雑
かつ高価になること、レチクルのパターンによる検出ノ
イズが入シ易い一方でレチクル表面のクランク全検出す
ることが難かしいこと、レチクル裏面の無害異物と表面
の有@異物の識別奮行なうことができないこと等がめる
However, in this device, after detecting a foreign object, the exposure device
/There is a major problem in that it is not possible to detect all foreign substances that newly adhere when setting the particle or continuing exposure. Another problem with this song is that the device mechanism, such as the laser scanning device and the photoelectric element that follows it, is extremely complex and expensive.Also, detection noise due to the reticle pattern easily enters, while the crank on the reticle surface is completely detected. It is difficult to distinguish between harmless foreign objects on the back side of the reticle and foreign objects on the front side.

したがって本発明の目的は、実際の露光状態にあるレチ
クルに付着した有害異物やレチクルのクラックを正確に
検出することができると共に、検出部の構成音n■単な
ものとしかつ全体奮低コストに製造することができる投
影露光装Kk提供することにある。
Therefore, an object of the present invention is to be able to accurately detect harmful foreign matter adhering to a reticle in an actual exposure state and cracks in the reticle, and to reduce the overall noise and noise of the detection unit while reducing the overall cost. An object of the present invention is to provide a projection exposure system Kk that can be manufactured.

このような目的を達成するために本発明に、投影露光用
光源光の一部rレチクルの側部に導いてレチクル政面に
略平行に照射させる異物検出九学系ト、レチクルパター
ンの結像位置に一時的に設置可能で前記光の乱反射光r
検1Ji−jる光(てンサと會備えるようにし友もので
ある。
In order to achieve such objects, the present invention provides a method for detecting foreign objects in which a portion of the light source light for projection exposure is guided to the side of the reticle and irradiated approximately parallel to the surface of the reticle, and imaging of the reticle pattern is provided. It can be temporarily installed at a certain position and the diffused reflection of the light r
The light that shines on the surface of the screen is a friend of mine.

以下、本発明を図示の実施列によシ説明する。The present invention will now be explained with reference to the illustrated embodiments.

第1図は本発明の投影露光装(qの全体構成図でめシ、
1は所定のパター72表面(F面)に形成したレチクル
、2&ユこの1/チクルパターンカ投影露光されるウェ
ーハでめる。このウエーノ・2は夫々駆動機構3.4に
よって駆動δれるXテーブル5、Yテーブル6からなる
XYテーブル7上に載置さ7’L、水平XY方向に移動
されて前記レチクルパターンが折目状に露光される。
Figure 1 is an overall configuration diagram of the projection exposure system (q) of the present invention.
1 is a reticle formed on the surface (F surface) of a predetermined pattern 72, and 2 & Y is a wafer to be exposed by projection of this 1/ticle pattern. This ueno-2 is placed on an XY table 7 consisting of an exposed to light.

MtJ記レテレチクル投影光学系8は、信置面状の反射
鏡9勿備えfCC銅鋼ランプ10才光源して備え、これ
ばコンデンサレンズ11=r通してレチクル1&こ照射
すると共に、レチクル1の下方に設はり縮小結像レンズ
12にてレチクル1のノくターン像をウェーハ2辰面に
結像できるようにしている。
The MtJ reteleticle projection optical system 8 is equipped with a reflector 9 in the form of a mirror surface and a 10-year-old fCC copper steel lamp as a light source. A reduction imaging lens 12 is provided so that a notch image of the reticle 1 can be formed on the lateral surface of the wafer 2.

J3はシャッタでめυ、露光時に開動する。J3 is a shutter that opens and moves during exposure.

一方、14は異*検出光学系であり、前記シャッタ13
の直上位置に設けたノ1−フミラー15にて前記光源光
の一部を側方に取り出している。また、この光学系14
は夫々2個のリレーレンズ16、】7と反射ミラー18
.19と全備えて前記ハーフミラ−15i/こて取り出
した光音前記レチクルlの側方位置に互で導き、しかる
上でレチクル1に略その赤面と平行な方向から照射して
いる。
On the other hand, 14 is a different* detection optical system, and the shutter 13
A part of the light from the light source is taken out to the side by a top mirror 15 provided directly above the light source. In addition, this optical system 14
are two relay lenses 16, ]7 and a reflecting mirror 18, respectively.
.. 19 and the half mirror 15i/trowel take out the light sound to a side position of the reticle 1, and then irradiate the reticle 1 from a direction substantially parallel to its red face.

なお、レチクル1の他側部には反射ミラー20を立設し
、この平行な照射光音反射して再度レチクル1表面に向
かって平行に照射場れるようにしている。21は反射ミ
ラ−190角度変更機構である。
A reflecting mirror 20 is provided upright on the other side of the reticle 1 to reflect the sound of the parallel irradiated light so that the irradiation field is parallel to the surface of the reticle 1 again. 21 is a reflection mirror 190 angle changing mechanism.

他方、前記XYテーブル7上のウエーノ・2近傍位匝に
は光7区素子からなる光センサ22を取着し、。
On the other hand, an optical sensor 22 consisting of a 7-section optical element is attached to a position near Ueno 2 on the XY table 7.

XYテーブル7の移動によってレチクルノ(ターン像の
結像位置に移動できるようにしている。この光センサ2
2はその光検出面を前記ウェー・・20表面と同一レベ
ルに保持している。
By moving the XY table 7, the reticle can be moved to the imaging position of the turn image.
2 holds its photodetecting surface at the same level as the surface of the wafer 20.

そして、前記X、Yの各テーブル駆動機構3.4、反射
ミラーの角度変更機構21.光センサ22全制御部23
に接続して、夫々の信号を制御部23に取シ入れるよう
にし、制御部23はこれケ演算部24に出力して0RT
25或いはプリンタ26に異物の状態’kP示させるよ
うにしている。
The X and Y table driving mechanisms 3.4, the reflecting mirror angle changing mechanism 21. Optical sensor 22 Total control section 23
The signals are input to the control unit 23, and the control unit 23 outputs them to the calculation unit 24 and outputs them to the 0RT.
25 or printer 26 to indicate the state of the foreign object 'kP.

以上の構成の投影露光装置によれば、レチクルの異物の
検出および露光に次のように行なわれる。
According to the projection exposure apparatus having the above configuration, detection of foreign matter on the reticle and exposure are carried out as follows.

先ず、レチクルIt図示位置にセットした上下水銀ラン
プ10ケ点灯し、かつシャッタ13全開にする。このと
き、XYテーブル7上にはウェーハの代りに標準板を載
置しておき、この赤面にレチクルパターン像が焦点を結
ぶように縮小結像レンズ12全藺整する。この準備工程
の完了後、シャッタ13’に閉成して異物検査音開始す
る。
First, 10 upper and lower mercury lamps set on the reticle It are set at the illustrated positions are turned on, and the shutter 13 is fully opened. At this time, a standard plate is placed on the XY table 7 instead of the wafer, and the entire reduction imaging lens 12 is adjusted so that the reticle pattern image is focused on this red surface. After completing this preparation process, the shutter 13' is closed and the foreign object inspection sound is started.

シャッタ13の閉成により、ランプ10の光はハーフミ
ラ−1−5によって側方へ反射芒れ、リレーレンズ16
.17と反射ミラー18.19によってレチクルl 9
111方へ導かれる。セして、最終の反射ミラー19の
角度全角度変更機構21によって適宜調節すれば、反射
光はレチクル1の表面に略平行(微少角度を有してもよ
い)に照射ちれる。
When the shutter 13 is closed, the light from the lamp 10 is reflected laterally by the half mirror 1-5, and the relay lens 16
.. Reticle l 9 by 17 and reflective mirror 18.19
111 You will be guided in the direction. If the angle of the final reflecting mirror 19 is adjusted appropriately by the full angle changing mechanism 21, the reflected light is irradiated approximately parallel to the surface of the reticle 1 (it may have a slight angle).

また、一部の光は反対側に設けyc平面または曲面状の
反射ミラー20に当射して反射された後にレチクル表面
およびレチクルのガラス基板の側面に照射きれる。
Further, a part of the light is reflected by a reflection mirror 20 provided on the opposite side, which is a yc plane or a curved surface, and is then irradiated onto the reticle surface and the side surface of the glass substrate of the reticle.

そして、この状態金床ちながら、第2図に示すようにX
Yテーブル7ケ移動芒ぜてプロセンサ22奮ウ工−ハ相
当位1鉦内の種々の位置に順次移動嘔せる。すると、異
物X1.X2やクランクX3の生じている箇所では光が
乱反射されるために、光子ンサ22は位置[Pt x 
 ”t % P8において庁■己異物X1、X2やクラ
ンクX3の乱反射光音検出し、これにより異物やクラン
クの検11t’(r可能にするのである。この場合、異
物X2が有るレチクルガラス面側の異物の内、パターン
1aの上方に有る異物は無害であるため検出しなくてよ
い。また、仮肋線のようなシャンク27i設けてレチク
ル表面にのみ光が照射されるようにすれば、裏面側(レ
チクルガラス面側)の異物全検出しないようにすること
も用来る。さらに表面側も同様に選択的に、かくずこと
もoJ能である。図中、laはパターンである。
While holding the anvil in this state, as shown in Figure 2,
The seven Y-tables are moved together and the processor 22 is moved sequentially to various positions within the corresponding position. Then, foreign matter X1. Since light is diffusely reflected at the location where X2 and crank X3 occur, the photon sensor 22 is at the position [Pt x
At P8, it detects the diffusely reflected light and sound of foreign objects X1, X2 and crank X3, thereby making it possible to detect foreign objects and cranks.In this case, the reticle glass surface side where foreign object X2 is located is detected. Of the foreign objects in the pattern 1a, the foreign objects above the pattern 1a are harmless and do not need to be detected.In addition, if a shank 27i like a false rib is provided so that the light is irradiated only on the front surface of the reticle, the back surface It is also possible to not detect all foreign matter on the side (on the reticle glass surface side).Furthermore, it is also possible to selectively detect foreign matter on the front side as well.In the figure, la is a pattern.

したがって、XYテーブルの各、駆動地検3.4の位置
信号と、その時々の光センサ22の信号γ制御部23に
送出すれば、0RT25やプリンタ26にはレチクルに
おける異物等の存在箇所ケ正確に検出することができる
Therefore, by sending the position signals of each of the XY tables, the driving position detection 3.4, and the signal of the optical sensor 22 to the γ control unit 23, the 0RT 25 and printer 26 can accurately identify the location of foreign objects on the reticle. can be detected.

異物検出後はレチクル表面の異9勿r除去し、XYテー
ブル7上にウェーハ2忙セツトしてこれケ露光位置に設
定すれば、XYテーブル7とンヤノタ13の相関作柑に
よってノブ「望の籟Xr行なうことができるのである。
After detecting a foreign object, remove any foreign objects on the reticle surface, set two wafers on the XY table 7, and set them at the exposure position. Xr can be done.

ここで、異物の検出はウェーハ2上−\の名露光毎に行
なうようにしてもよい。
Here, the detection of the foreign matter may be performed every time the wafer 2 is exposed.

したがって、以上の投影露光装置でに、レチクル1を投
影露光位置にセットした状態で異物検出上行ない、かつ
各1シヨツトの露光m、vc検出7行なうことができる
ので、露光+* F]i■xでに付層した異物の検出が
可能でめ先ガ廁な卸元孕用能eこする。また、本装置l
lに従来から備えられている投影光学系8 vc +)
レーレンズ16.17や反射ミラー18.19からなる
検出光学系14と、光学センサ22を伺設すれば構成で
きるので、全体構成を簡略化しかつ低コスト+Cできる
。更に、レチクルkc l1tl射する光の調般でレチ
クル表、裏面の異物葡1刊1F<的に検出でき、壕1こ
クランクをで検出することもできるのでおる。
Therefore, with the projection exposure apparatus described above, foreign matter detection can be performed with the reticle 1 set at the projection exposure position, and exposure m and vc detection can be performed for each one shot seven times, so that exposure +*F]i■ It is possible to detect foreign substances that have been deposited on the skin, and the tip of the eye can be rubbed thoroughly. In addition, this device
Projection optical system 8 vc +) which is conventionally provided in l.
Since the detection optical system 14 consisting of the lens 16, 17 and the reflecting mirror 18, 19 and the optical sensor 22 can be installed, the overall configuration can be simplified and the cost can be reduced. Furthermore, by adjusting the light emitted from the reticle, it is possible to detect foreign objects on the front and back surfaces of the reticle, and it is also possible to detect cranks in the trenches.

なお、第3図に示すように、レチクル1の支持板28?
r光透過部拐に゛C形成すると共に、その内側面一部荀
デーパ若しくは曲面アーパ状に形成し、この支持板28
内に反射ミラー19九r導入するようにし2てもよ(ハ
。このようにすil−ば、支持板28内に辱か′i1.
た元に内側面Vこて屈折して微少角度でl/ヂクル賢而
面当射されることになる。この場合、反射ミラー19の
角bw変更機構21ケ不要にできる。以上本f+lI&
よし′ンズ精像光学系でのべたが、ミラー反射投影光学
系の走置方式お」、ひステップアンドリピート方式の霧
光装置でも同様に行うこと−ができる。
Incidentally, as shown in FIG. 3, the support plate 28 of the reticle 1?
The support plate 28
It is also possible to introduce a reflective mirror 199r into the support plate 28 (c).
The light is then refracted on the inner surface of the V-trowel and is irradiated onto the L/Dicle surface at a minute angle. In this case, the angle bw changing mechanism 21 of the reflecting mirror 19 can be omitted. Above book f+lI&
Although we have described the above using a lens fine-image optical system, it can also be performed in the same way with a mirror reflective projection optical system using a scanning system or a step-and-repeat fog light system.

’f7j%t−’チクル1(1面よυ当射する光は、偏
光rかけた光=k Illいる共に、光センザー直前で
それに対応させる偏光ファイター盆設けて、選択的な方
向の光のみ奮受光さること全行なってもよい。
'f7j%t-'Chicle 1 (The light that hits υ from one side is the light multiplied by polarized light r=k You may do all you can to receive the light.

以上のように本発明の投影露光装置によれば、レチクル
の表面にこれと略平行に光ケ照射する異るので、レチク
ルを投影露光装置rCセットした状態でしかも露光の直
前に異物の検出7行なうことができ、これによシ正確な
異物の検出f ol能にして好適な投影露光全行なうこ
とができる。また、異物検出光学系と光センサ會付設す
るだけでよいので構成ケ簡単なものとし、低コストに製
造できる。更に光の照射のコントロールによって無害異
物と有害異物の確認が可能であり、レチクルのガラス基
板表面のクランフケ検出することができるという効呆も
奏する。
As described above, according to the projection exposure apparatus of the present invention, since light is irradiated onto the surface of the reticle approximately parallel to the surface of the reticle, foreign matter can be detected even when the reticle is set in the projection exposure apparatus rC and immediately before exposure. This makes it possible to accurately detect foreign objects and perform a suitable projection exposure. In addition, since it is only necessary to add a foreign object detection optical system and an optical sensor, the structure is simple and can be manufactured at low cost. Furthermore, by controlling the light irradiation, it is possible to identify harmless foreign substances and harmful foreign substances, and it is also effective in that it is possible to detect crumbs on the surface of the glass substrate of the reticle.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の投影露光装置の構成図、第2図は作用
葡説明するための一部拡大図、第3図は他の実施列の第
2図と同様の図である。 1・・レチクル、2・・・ウエーノ・、7・・・XYテ
ーブル、ト・・投影露光光学系、10・・水銀ランプ、
12・・・縮小結像レンズ、13・・・シャッタ、14
・・・異物検出光学系、22・・・光センサ、23・・
・制御部、27・・・シャッタ、28・・・支持板。 第  1  図 グO 第  2 図 2り 第  3 図
FIG. 1 is a block diagram of the projection exposure apparatus of the present invention, FIG. 2 is a partially enlarged view for explaining the operation, and FIG. 3 is a diagram similar to FIG. 2 of another embodiment. 1... Reticle, 2... Ueno, 7... XY table, G... Projection exposure optical system, 10... Mercury lamp,
12... Reduction imaging lens, 13... Shutter, 14
...Foreign object detection optical system, 22... Optical sensor, 23...
- Control unit, 27... shutter, 28... support plate. Figure 1 Figure 2 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】 1、 ガラス基板上に描かれた像をウェーハ表面に投影
露光する投影光学系と、露光用照明光学系吉この照明光
源光の一部を前記ガラス基板の側部に導りて少なくとも
ガラス基板の像面と略平行に照射する第2照明光学系と
、前記ガラス基板の結像位置に設置可能で前記第2照明
光学系の照射光によるガラス基板からの乱反射光全検出
する光センサと全備えること’t%徴とする投影露光装
置。 2、光センサは光電素子からなシ、ウェーハを載置し7
(xyテーブルの一部に取着してなる特許請求の範囲第
1項記載の投影露光装置。 3、第2照明光学系はガラス基板表面忙対して微少角度
で光を照射してなる特許請求の範囲第1墳又V工第2項
に記載の投影露光装置。
[Claims] 1. A projection optical system that projects and exposes an image drawn on a glass substrate onto a wafer surface, and an exposure illumination optical system that guides a portion of the illumination light source light to the side of the glass substrate. a second illumination optical system that irradiates at least approximately parallel to the image plane of the glass substrate; and a second illumination optical system that can be installed at the image formation position of the glass substrate and detects all the diffusely reflected light from the glass substrate by the irradiation light of the second illumination optical system. A projection exposure apparatus that is equipped with a light sensor and a full-featured optical sensor. 2. The optical sensor is not a photoelectric element, and the wafer is placed on it.
(The projection exposure apparatus according to claim 1, which is attached to a part of an xy table. 3. The second illumination optical system irradiates light at a minute angle with respect to the surface of the glass substrate. The projection exposure apparatus according to item 2 of the scope of the first mound or V technique.
JP57160986A 1982-09-17 1982-09-17 Projection and exposure device Pending JPS5950522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57160986A JPS5950522A (en) 1982-09-17 1982-09-17 Projection and exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57160986A JPS5950522A (en) 1982-09-17 1982-09-17 Projection and exposure device

Publications (1)

Publication Number Publication Date
JPS5950522A true JPS5950522A (en) 1984-03-23

Family

ID=15726390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57160986A Pending JPS5950522A (en) 1982-09-17 1982-09-17 Projection and exposure device

Country Status (1)

Country Link
JP (1) JPS5950522A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61100932A (en) * 1984-10-24 1986-05-19 Hitachi Ltd Exposure equipment
JP2007180549A (en) * 2005-12-27 2007-07-12 Asml Netherlands Bv Lithography device and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61100932A (en) * 1984-10-24 1986-05-19 Hitachi Ltd Exposure equipment
JPH0475648B2 (en) * 1984-10-24 1992-12-01 Hitachi Ltd
JP2007180549A (en) * 2005-12-27 2007-07-12 Asml Netherlands Bv Lithography device and method

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