JPS59152662A - Ic for photosensor - Google Patents
Ic for photosensorInfo
- Publication number
- JPS59152662A JPS59152662A JP58026691A JP2669183A JPS59152662A JP S59152662 A JPS59152662 A JP S59152662A JP 58026691 A JP58026691 A JP 58026691A JP 2669183 A JP2669183 A JP 2669183A JP S59152662 A JPS59152662 A JP S59152662A
- Authority
- JP
- Japan
- Prior art keywords
- light
- region
- wirings
- type diffusion
- shielded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract 1
- 230000007257 malfunction Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14681—Bipolar transistor imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、フォト感知素子と、このフォト感知素子の受
光動作に関与する周辺回路とを備えてなるフォトセンサ
ー用ｌｃ（集積回路）に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photosensor LC (integrated circuit) comprising a photosensing element and peripheral circuits involved in the light receiving operation of the photosensing element.
このようなフォトセンサー用ＩＣに使用されるフォトト
ランジスタやフォトダイオード等のフォト感知素子に光
が照射された場合、その周辺回路にもその光が照射され
る場合がある。この場合、その周辺回路に例えばトラン
ジスタが含まれていると、このトランジスタのベース領
域にその光が照射されることになる。ところが、゛トラ
ンジスタのベース領−に対して光が照射されると１、該
トランジスタが誤動作をすることがあり、フォトセンサ
ー、から所定のセンサー出力を確実に得ることが困難に
なる。When a photosensing element such as a phototransistor or a photodiode used in such a photosensor IC is irradiated with light, its peripheral circuits may also be irradiated with the light. In this case, if the peripheral circuit includes, for example, a transistor, the light will be irradiated onto the base region of this transistor. However, if the base region of the transistor is irradiated with light, the transistor may malfunction, making it difficult to reliably obtain a predetermined sensor output from the photosensor.
本発明は、このような誤動作が生じないようにして所定
のセンサー出力が確実に得られるようにすることを目的
とする。An object of the present invention is to prevent such malfunctions from occurring and ensure that a predetermined sensor output is obtained.
本発明は、このような目的を達成するため、周辺回路の
少なくとも光の影響を受は易い回路素子、例えばトラン
ジスタのベース領域には、遮光性を有する゛配線層によ
り遮光を施こすようにしている。In order to achieve such an object, the present invention provides a structure in which at least a circuit element in a peripheral circuit that is easily affected by light, such as a base region of a transistor, is shielded from light by a wiring layer having a light-shielding property. There is.
以下、本発明を図面に示す一実施例に基ついて詳細に説
明する。Hereinafter, the present invention will be described in detail based on an embodiment shown in the drawings.
′Ｓ１図はこの実施例の平面図であり、第２図は第１図
の切断線■−■に沿う構造的断５面図である。'S1 is a plan view of this embodiment, and FIG. 2 is a structural cross-sectional view taken along section line 1--2 in FIG.
これらの図においては、フォト感知素子の図示は簡単化
のため省略され、また周辺回路の内、光の影響を受は易
い回路素子としてトランジスタが代表的に図示される。In these figures, illustration of the photo-sensing element is omitted for the sake of simplicity, and a transistor is typically illustrated as a circuit element that is easily affected by light among the peripheral circuits.
このトランジスタ１は、通常の半導体集積回路の製法に
より作られる。図において、２はＰ形シリコン基板、３
ａはＰ形シリコン基板２上にエピタキシャル成長により
形成されたｎ形のコレクタ領域、３ｂはｎ形拡散により
形成されたコレクタ領域、４，４はＰ形拡散により形成
された分離領域、５は同じくＰ形拡散により形成された
ベース領域、６はｎ形拡散により形成されたエミッタ領
域、７，７は酸化膜である。This transistor 1 is manufactured by a normal semiconductor integrated circuit manufacturing method. In the figure, 2 is a P-type silicon substrate, 3
a is an n-type collector region formed by epitaxial growth on a P-type silicon substrate 2, 3b is a collector region formed by n-type diffusion, 4, 4 is an isolation region formed by P-type diffusion, and 5 is also a P-type collector region. A base region is formed by type diffusion, 6 is an emitter region formed by n-type diffusion, and 7 is an oxide film.
８はエミッタ用アルミニウム蒸着配線である。8 is an aluminum vapor-deposited wiring for an emitter.
このアルミニウム蒸着配線８は、ベース領域５の図上、
左半部５ａを覆って遮光できるパターンを有している。This aluminum vapor-deposited wiring 8 is
It has a pattern that can cover the left half portion 5a and block light.
このベース領域５の図」二、右半部５ｂもベース用アル
ミニウム蒸着配線８′により覆われて遮光される。した
がって、ベース領域５の左・右半部５ａ、５ｂはこのよ
うにしてアルミニウム蒸着配線８，８′により遮光され
ることになる。また、両アルミニウム蒸着配線８，８′
の電気的な短絡を防止するためベース領域の左・右半部
５ａ、５ｂは残余の部分５Ｃを介して連設されているが
、この残余の部分５Ｃは、光の影響を極力なくすために
その面積を狭くされている。８″はコレクタ用アルミニ
ウム蒸着配線である。なお、上述の実施例ではｎｐｎ形
のトランジスタについて説明したが、ＰｎＰ形のものに
ついても同様に適用することができる。また、この実施
例では遮光される周辺回路の回路素子としてトランジス
タを用いて説明したが、フォト感知素子を除き、光の影
響が排除されるべき回路素子についても同様にアルミニ
ウム蒸着配線などの遮光性を有する配線層により遮光す
るとよい。The right half 5b of the base region 5 is also covered with the base aluminum vapor-deposited wiring 8' and is shielded from light. Therefore, the left and right halves 5a and 5b of the base region 5 are thus shielded from light by the aluminum vapor-deposited wirings 8 and 8'. In addition, both aluminum vapor deposited wirings 8, 8'
The left and right halves 5a and 5b of the base area are connected via the remaining portion 5C to prevent electrical short circuits. Its area has been narrowed down. 8'' is an aluminum vapor-deposited wiring for the collector.Although the above embodiment describes an npn type transistor, the same can be applied to a pnp type transistor.Also, in this embodiment, a light shielded Although transistors have been described as circuit elements of the peripheral circuit, circuit elements other than photo-sensing elements that should be protected from the influence of light may be similarly shielded from light by a wiring layer having a light-shielding property such as aluminum vapor-deposited wiring.
以上のように、本発明によれば、周辺回路の少なくとも
光の影響を受は易い回路素子には遮光を施こしたので、
フォト感知素子に光を照射させてもこの光が前記回路素
子に影響を及はすことがな（なる。したがって、回路素
子が前記光の照射により誤動作をひきおこすおそれがな
り、所望のセ、ンサー出力を確実に得ることができる。As described above, according to the present invention, at least the circuit elements of the peripheral circuit that are easily affected by light are shielded from light.
Even if the photo-sensing element is irradiated with light, this light will not affect the circuit element.Therefore, there is a risk that the circuit element will malfunction due to the irradiation of the light, and the desired sensor or sensor will not be affected. Output can be reliably obtained.
図面は本発明の一実施例を示し、第１図は平面図、第２
図は第１図の切断線ｌ−Ｈに沿う断面図である。
１−１−ランジスタ、５・ベース領域、ｓａ・・ベース
領域５の左半部、５ｂ・・ベース領域５の右半部、５ｃ
・°・ベース領域５の残余の部分、６・・酸化膜、８゜
８’−°°アルミニウム蒸着配線
特許出願人 ローム株式会社
代理人 弁理士岡田和秀The drawings show one embodiment of the present invention, with FIG. 1 being a plan view and FIG.
The figure is a sectional view taken along section line l-H in FIG. 1. 1-1-Transistor, 5 Base area, sa...Left half of base area 5, 5b...Right half of base area 5, 5c
・°・Remaining portion of base region 5, 6...Oxide film, 8°8'-°° Aluminum evaporated wiring patent applicant ROHM Co., Ltd. Agent Patent attorney Kazuhide Okada
Claims (1)
作に関与する周辺回路とを備えてなるフォトセンサー用
ＩＣにおいて、前記周辺回路の少なくとも光の影響を受
は易い回路素子には、遮光性を有する配線層により遮光
を施こしてなるフォトセンサー用ＩＣ０(1) In a photosensor IC comprising a photo-sensing element and a peripheral circuit involved in the light-receiving operation of the photo-sensing element, at least a circuit element of the peripheral circuit that is easily affected by light has a light shielding property. IC0 for photosensors that is shielded from light by a wiring layer with
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58026691A JPS59152662A (en) | 1983-02-20 | 1983-02-20 | Ic for photosensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58026691A JPS59152662A (en) | 1983-02-20 | 1983-02-20 | Ic for photosensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59152662A true JPS59152662A (en) | 1984-08-31 |
| JPS6139744B2 JPS6139744B2 (en) | 1986-09-05 |
Family
ID=12200412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58026691A Granted JPS59152662A (en) | 1983-02-20 | 1983-02-20 | Ic for photosensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59152662A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4743955A (en) * | 1985-05-01 | 1988-05-10 | Canon Kabushiki Kaisha | Photoelectric converting device |
| JP2006281806A (en) * | 2005-03-31 | 2006-10-19 | Mazda Motor Corp | Arranging structure of engine auxiliary instrument for vehicle |
-
1983
- 1983-02-20 JP JP58026691A patent/JPS59152662A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4743955A (en) * | 1985-05-01 | 1988-05-10 | Canon Kabushiki Kaisha | Photoelectric converting device |
| JP2006281806A (en) * | 2005-03-31 | 2006-10-19 | Mazda Motor Corp | Arranging structure of engine auxiliary instrument for vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6139744B2 (en) | 1986-09-05 |
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