JPS59108320A - Radiation transfer method - Google Patents
Radiation transfer methodInfo
- Publication number
- JPS59108320A JPS59108320A JP57218971A JP21897182A JPS59108320A JP S59108320 A JPS59108320 A JP S59108320A JP 57218971 A JP57218971 A JP 57218971A JP 21897182 A JP21897182 A JP 21897182A JP S59108320 A JPS59108320 A JP S59108320A
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- mask
- ray mask
- ray
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 7
- 238000005286 illumination Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005469 synchrotron radiation Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（ｌｉ全発明技術分野
本発明はＸ線マスクと被転写体との相対的な動きを生じ
させて縦横方向の照明角が異なる放射線を放射線マスク
へ照射して得られるマスクパターンと被転写体との位置
合わせをする放射線転写方法に関する。Detailed Description of the Invention (li) All Technical Fields of the Invention The present invention is obtained by irradiating a radiation mask with radiation having different vertical and horizontal illumination angles by causing relative movement between an X-ray mask and an object to be transferred. The present invention relates to a radiation transfer method for aligning a mask pattern and an object to be transferred.
（２）技術の背景
半導体集積回路の高密度化が進むにつれて、そのウェハ
にますます微細化されたパターンを描画しなければなら
なくなって来ている。これを実現するべ（、Ｘ線転写技
術の開発が鋭意進められており、その中でもＳＯＲ光（
シンクロトロン軌道放射光）を線源とする転写技術が注
目されている。(2) Background of the Technology As the density of semiconductor integrated circuits increases, it becomes necessary to write increasingly finer patterns on the wafers. In order to realize this, the development of X-ray transfer technology is being actively progressed, and among these, SOR light (
Transfer technology using synchrotron orbital synchrotron radiation (orbital synchrotron radiation) as a radiation source is attracting attention.
しかしながら、ＳＯＲ光の放射特性に起因して生ずる問
題のため、その転写上に不都合を来たしており、これを
解決しうる技術的手段の開発が切望されている。However, problems caused by the radiation characteristics of SOR light have caused inconveniences in the transfer thereof, and there is a strong need for the development of technical means that can solve this problem.
（３）従来技術と問題点
従来の、ＳＯＲ光をＸ線マスクへ照射してそのパターン
をウェハ上に転写する転写技術は、ＳＯＲ光の照明角が
縦方向と横方向とで異なるため。(3) Prior Art and Problems In the conventional transfer technology in which an X-ray mask is irradiated with SOR light and the pattern is transferred onto a wafer, the illumination angle of the SOR light is different in the vertical and horizontal directions.
第１図に示す如く、振動させられるＸ線ミラーａへＳＯ
Ｒ光すを照射してこれによる偏向走査によりＸ線マスク
Ｃ全面を均一に照明せんとするものである。この方法に
よっては、ＳＯＲ光の縦方向と横方向との照明角が異な
ることから、第２図に示すようなパターンの等方向な歪
（第２図において、ｄは新たなＸ線転写領域、０はウェ
ハ上のパターン領域である。）に対して、縦方向及び横
方向を同時に位置合わせをすることができず、Ｘ線マス
クに垂直な軸方向の調整により第３図の（３−１）又は
（３−２）に示すような位置合わせが出来るに過ぎなか
った。As shown in Figure 1, the SO to the vibrated X-ray mirror a
The purpose is to uniformly illuminate the entire surface of the X-ray mask C by irradiating R light beams and scanning by deflection. Depending on this method, since the vertical and horizontal illumination angles of the SOR light are different, the pattern is isodirectionally distorted as shown in Figure 2 (in Figure 2, d is the new X-ray transfer area, 0 is the pattern area on the wafer), it was not possible to align the vertical and horizontal directions at the same time, and by adjusting the axial direction perpendicular to the X-ray mask, ) or (3-2).
（４）発明の目的
本発明は上述したような従来方法の有する欠点に鑑みて
創案されたもので、その目的は照射方向に垂直な縦横方
向の照明角が異なる放射線であっても等方向な歪に対し
パターンの位置合わせをなしうる放射線転写方法を提供
することにある。(4) Purpose of the Invention The present invention was devised in view of the drawbacks of the conventional methods as described above, and its purpose is to provide uniform radiation even if the illumination angles in the vertical and horizontal directions perpendicular to the irradiation direction are different. An object of the present invention is to provide a radiation transfer method that can align patterns against distortion.
（５）発明の構成
そして、この目的は照射方向に対し直角な平面内で直交
する各方向の照明角が異なる放射線を放射線マスクへ照
射し、そのマスクパターンを被転写体に転写するに際し
、上記照射方向での上記放射線マスク及び被転写体の相
対的な移動並びに上記直交する方向の軸の内の１位置合
わせしようとする方向に直交する軸のまわりでの上記放
射線マスク及び被転写体の相対的な回転を生じさせて放
射線転写領域の位置合わせをすることによって達成され
る。(5) Structure of the invention The purpose of this invention is to irradiate a radiation mask with radiation having different illumination angles in each direction perpendicular to the irradiation direction, and to transfer the mask pattern to the object to be transferred. Relative movement of the radiation mask and the object to be transferred in the irradiation direction and relative movement of the radiation mask and the object to be transferred around one of the axes in the orthogonal directions that is orthogonal to the direction in which alignment is to be attempted. This is accomplished by creating a mechanical rotation to align the radiation transfer area.
（６）発明の実施例
以下、添付図面を参照しながら１本発明の詳細な説明す
る。(6) Embodiments of the Invention Hereinafter, one embodiment of the present invention will be described in detail with reference to the accompanying drawings.
第４図乃至第６図は本発明の一実施例を示す。FIGS. 4 to 6 show an embodiment of the present invention.
この実施例は放射線源として、第４図に示すＸ−Ｙ方向
において照明角が異なるシンクロトロン軌道放射光（Ｓ
ＯＲ光）光源１が用いられる。このＳＯＲ光光源１が放
射線マスクであるｘｉｓマスク２を見込む角（Ｘ方向の
ＳＯＲ光拡がり角）がαであり、ＳＯＲ光光源１によっ
てＸ線マスク２を偏向走査する偏光中心３からＸ線マス
ク２を見込む角（偏向中心３からの、Ｙ方向のＳＯＲ光
拡がり角）がβであるように構成されると共に、Ｘ線マ
スク２はＺ軸方向に移動可能に、且つＹ軸のまわりで回
動可能に設置されて構成されている。αとβとは一般に
α≠βである。 このような構成の下において１図示の
如く、α〈βなる関係にあるとする場合に、第５図及び
第６歯に示す如く。This embodiment uses synchrotron orbital synchrotron radiation (S) with different illumination angles in the X-Y directions shown in FIG.
OR light) light source 1 is used. The angle at which this SOR light source 1 looks into the xis mask 2 which is a radiation mask (SOR light spreading angle in the X direction) is α, and the X-ray mask 2 is deflected and scanned by the SOR light source 1 from the polarization center 3 The X-ray mask 2 is configured so that the angle at which the X-ray mask 2 is viewed (the SOR light spread angle in the Y direction from the deflection center 3) is β, and the X-ray mask 2 is movable in the Z-axis direction and rotated around the Y-axis. installed and configured to be movable. α and β are generally α≠β. Under such a configuration, if there is a relationship α<β as shown in FIG. 1, as shown in FIG. 5 and the sixth tooth.
Ｘ線マス、り２の転写パターンとウェハ４との間に。Between the transfer pattern of the X-ray mass 2 and the wafer 4.
△Ｘ、△ｙの位置ずれがあるとする。Assume that there is a positional shift of ΔX and Δy.
この場合に、Ｘ線マスク２をＺ方向において。In this case, the X-ray mask 2 is placed in the Z direction.
ＡからＢへ、又はＢからＡへ△２だけ移動させることに
より、△ｙを零にする。つまりＹ方向の位置合わせをす
ることが出来る。次いで、マスク２をＹ軸のまわりに△
θだけ回動させることにより。By moving from A to B or from B to A by Δ2, Δy becomes zero. In other words, alignment in the Y direction can be performed. Next, move mask 2 around the Y axis by △
By rotating by θ.
△Ｘを零にする。つまりＸ方向の位置合わせをすること
が出来る。Set △X to zero. In other words, alignment in the X direction can be performed.
このようにして、Ｘ、Ｙ方向のサイズを別個に調整しう
ろことになり２等方向な歪に対しパターンの位置合わせ
をすることが出来る。In this way, the size in the X and Y directions can be adjusted separately, and the pattern can be aligned against distortion in two iso-directional directions.
又、α〉βなる場合には、上記調整関係についてＸとＹ
とが入れ替えられることを除き、その他の事項は同様で
ある。Also, if α>β, then X and Y regarding the above adjustment relationship
Other matters are the same except that
上記実施例においては、マスク２の移動及び回転を生じ
させる場合について説明したが、ウェハ４の移動及び回
転を生じさせるようにしてもよい。In the above embodiment, a case has been described in which the mask 2 is caused to move and rotate, but the wafer 4 may be caused to move and rotate.
又、マスク２とウェハ４とを同時に相対的に、上記夫々
の動作を生じさせるようにしてもよい。Further, the above-mentioned operations may be caused to occur relative to the mask 2 and the wafer 4 at the same time.
（７）発明の効果
以上述べたように２本発明によれば、照射方向に直角な
平面内で直交する軸方向における照明角が異なる放射線
のマスクへの照明に際して生ずる上記各軸方向のずれ量
を個別に除去し得るから。(7) Effects of the Invention As described above, according to the present invention, the amount of deviation in each of the axial directions that occurs when a mask is illuminated with radiation having different illumination angles in the orthogonal axial directions within a plane perpendicular to the irradiation direction. can be removed individually.
等方向な歪に対してパターンの位置合わせをすることが
出来る。又、その位置合わせは異方的な歪に対しても又
有効である。It is possible to align patterns against isodirectional distortion. Moreover, the alignment is also effective against anisotropic distortion.
第１図は従来のＸ線転写装置の要部構成を示す図、第２
図はウェハのパターン領域と新らたなＸ線転写領域とを
示す図２第３図はＺ軸方向の調整による位置合わせを図
解する図、第４図はＳＯＲ光源及び偏向中心からＸ線マ
スクを見込む角度関係を示す図、第５図はＹ方向のずれ
量の調整方法を図解する図、第６図はＸ方向のずれ量の
調整方法を図解する図である。
図中、ｌはＳＯＲ光光源、２はＸ線マスク、３は偏向中
心、４はウェハである。
第１図
８９−Figure 1 is a diagram showing the main part configuration of a conventional X-ray transfer device, Figure 2
Figure 2 shows the pattern area of the wafer and the new X-ray transfer area. Figure 3 is a diagram illustrating alignment by adjustment in the Z-axis direction. Figure 4 shows the X-ray mask from the SOR light source and deflection center. FIG. 5 is a diagram illustrating a method for adjusting the amount of deviation in the Y direction, and FIG. 6 is a diagram illustrating a method for adjusting the amount of deviation in the X direction. In the figure, 1 is an SOR light source, 2 is an X-ray mask, 3 is a deflection center, and 4 is a wafer. Figure 1 89-
Claims (1)
が異なる放射線を放射線マスクへ照射し。 そのマスクパターンを被転写体に転写するに際し。 上記照射方向での上記放射線マスク及び被転写体の相対
的な移動並びに上記直交する方向の軸の内の１位置合わ
せしようとする方向に直交する軸のまわりでの上記放射
線マスク及び被転写体の相対的な回転を生しさせて放射
線転写＠域の位置合わせをすることを特徴とする放射線
転写方法。[Claims] A radiation mask is irradiated with radiation having different illumination angles in each direction perpendicular to the transfer direction within a plane perpendicular to the transfer direction. When transferring the mask pattern to the object to be transferred. The relative movement of the radiation mask and the transferred object in the irradiation direction, and the relative movement of the radiation mask and the transferred object around one of the axes in the orthogonal directions, which is orthogonal to the direction in which alignment is to be performed. A radiation transfer method characterized by aligning the radiation transfer @ area by generating relative rotation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57218971A JPS59108320A (en) | 1982-12-14 | 1982-12-14 | Radiation transfer method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57218971A JPS59108320A (en) | 1982-12-14 | 1982-12-14 | Radiation transfer method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59108320A true JPS59108320A (en) | 1984-06-22 |
| JPH0422015B2 JPH0422015B2 (en) | 1992-04-15 |
Family
ID=16728223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57218971A Granted JPS59108320A (en) | 1982-12-14 | 1982-12-14 | Radiation transfer method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59108320A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6362231A (en) * | 1986-09-02 | 1988-03-18 | Nippon Telegr & Teleph Corp <Ntt> | X-ray reduction stepper |
-
1982
- 1982-12-14 JP JP57218971A patent/JPS59108320A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6362231A (en) * | 1986-09-02 | 1988-03-18 | Nippon Telegr & Teleph Corp <Ntt> | X-ray reduction stepper |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0422015B2 (en) | 1992-04-15 |
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