JPS58207653A - Master wafer for semiconductor integrated circuit - Google Patents

Master wafer for semiconductor integrated circuit

Info

Publication number
JPS58207653A
JPS58207653A JP9057982A JP9057982A JPS58207653A JP S58207653 A JPS58207653 A JP S58207653A JP 9057982 A JP9057982 A JP 9057982A JP 9057982 A JP9057982 A JP 9057982A JP S58207653 A JPS58207653 A JP S58207653A
Authority
JP
Japan
Prior art keywords
chip
wafer
basic blocks
gates
master
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9057982A
Other languages
Japanese (ja)
Inventor
Masamichi Sugai
正道 菅居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9057982A priority Critical patent/JPS58207653A/en
Publication of JPS58207653A publication Critical patent/JPS58207653A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive to improve the economic property by enabling the arbitrary selection of basic blocks included in a master chip, by making variable the scribing position of the master wafer before forming the master chip. CONSTITUTION:A hundred basic blocks 2 are built in on a piece of semiconductor wafer 1, which basic blocks 2 are composed by arranging and integrate a plurality of several kinds of circuit elements consisting of a plurality of elements. The chip A is scribed at the position of a real lines 3 and constituted of four basic blocks 2, and the chip B is scribed at the position of dot lines 4 and constituted of twenty five basic blocks 2. In other words, twenty five master chips can be obtained from a piece of wafer 1 in the case of the chip A, while four from the same wafer in the case of the chip B. Therefore, when the circuit scale of the basic block 2 is 200 gates, the chip A becomes 800 gates, and the chip B 5K gates; and the increase and decrease of the circuit scale is enabled by the unit of 200 gates only by changing the scribing position of the wafer 1 by means of the same wafer.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、マスク・スライス方式の半導体集積回路技術
に係わり、詳しくはマスク・チップを形成する以前のウ
ェーハ構造を改良した半導体集積回路用マスク・ウェー
ハに関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to mask slicing semiconductor integrated circuit technology, and more specifically to a mask for semiconductor integrated circuits that improves the wafer structure before forming mask chips. Regarding wafers.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

マスク・スライス方式とは、予め複数の素子からなる基
本セル(要素回路)を半導体ウェーハに多数作り込み、
コンタクト孔や金属配線等を変更することによって所望
の回路動作を得ようとするもので、新たな機能の回路の
要望に対しても比較的簡単に対処できることが特長であ
る。すなわち、金属配線を形成する前までの工程により
作成される半導体チップは全ての機能回路に略共通であ
るため、開発期間の短縮および製造コストの低減をはか
り得る。しかも、従来困難視されてきた多品種・少量生
産を可能とするだめ、近年特に注目され多くの製品が発
表されるに至っている。
The mask slicing method is a process in which a large number of basic cells (element circuits) consisting of multiple elements are fabricated on a semiconductor wafer in advance.
It attempts to obtain a desired circuit operation by changing contact holes, metal wiring, etc., and its feature is that it can relatively easily respond to requests for circuits with new functions. That is, since the semiconductor chip created through the steps up to the step of forming the metal wiring is substantially common to all functional circuits, it is possible to shorten the development period and reduce the manufacturing cost. Moreover, it has attracted particular attention in recent years and has led to the release of many products because it enables high-mix, low-volume production, which has been considered difficult in the past.

ところで、これまで報告されているマスク・スライス方
式の製品では、ダート・アレイ型が多く、1.5にダー
ト、3にダート、6にダート等多種類のマスク・チップ
を用意しておき、必要とする回路規模に応じてマスク・
チップを選択使用する方法が一般的である。このため、
例えば必要な回路規模が4にダートであるとき、マスク
・チップとしては6にダートのものを使用すること髪な
る。したがって、2にケ゛−トは不使用のまま残される
ことになり、回路規模に対するチップサイズが大型化し
不経済である。
By the way, most of the mask slicing method products that have been reported so far are of the dart array type, and many types of mask chips such as 1.5 dart, 3 dart, 6 dart, etc. are prepared, and the necessary Masks and
A common method is to use chips selectively. For this reason,
For example, if the required circuit scale is 4-dart, it would be best to use a 6-dart mask chip. Therefore, the second gate is left unused, which increases the chip size relative to the circuit scale, which is uneconomical.

′ま た、   】  K ダ − ト 、  2 K
 ダ − ト 、  3 K り′−ト  、4にダー
ト、・・・のように多品種のマスク・チップを予め用意
しておくことも経済的に好ましい方向とは云えない。
'Also,] K Da-to, 2 K
Preparing in advance a wide variety of mask chips such as 3K ri'-to, 4K ri'-to, 4-dirt, etc. is also not economically desirable.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、マスク・チップに含まれる基本ブロッ
ク(複数の要素回路を配列してなるもの)の数を所望の
回路規模に応じて必要最小限に選択することができ、経
済性の向上をはかり得る半導体集積回路用マスク・ウェ
ーハを提供することにある。
An object of the present invention is to enable the selection of the minimum number of basic blocks (consisting of a plurality of element circuits arranged) included in a mask chip according to the desired circuit scale, thereby improving economic efficiency. It is an object of the present invention to provide a mask wafer for semiconductor integrated circuits that can be used to measure .

〔発明の概要〕[Summary of the invention]

本発明の骨子は、マスク・チップを形成する前のマスク
・ウェーハのスクライブ位置を可変することにより、マ
スク・チップに含まれる基本ブロックを任意に選択でき
るようにしたことである。
The gist of the present invention is to make it possible to arbitrarily select the basic blocks included in the mask chip by varying the scribe position of the mask wafer before forming the mask chip.

すなわち本発明は、半導体集積回路用マスク・ウェーハ
において、数種の要素回路を襟数個配列集積化してなる
基本ブロックを半導体ウェーハ上に複数個配列すると共
に、各ブロック間にスクライブに供される配線領域を形
成し、必要とする回路規模に応じてスクライブ位置を可
変するようにしだものである。
That is, in a mask wafer for a semiconductor integrated circuit, the present invention arranges a plurality of basic blocks formed by arranging and integrating several types of element circuits on a semiconductor wafer, and scribing between each block. A wiring area is formed and the scribe position can be varied depending on the required circuit scale.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、スクライブ位1kを可変することによ
り1つのマスク・チップに含1れる基本ブロック数を任
意に選択することができるので、マスク・チップに含ま
れる基本ブロックを所望の回路規模に応じて必要最小限
に抑えることができ、経済性の向上をはかり得る。
According to the present invention, the number of basic blocks included in one mask chip can be arbitrarily selected by varying the scribe order 1k, so that the basic blocks included in the mask chip can be adjusted to a desired circuit scale. Depending on the situation, the amount can be reduced to the necessary minimum and economical efficiency can be improved.

〔発明の実施例〕[Embodiments of the invention]

第1図は本発明の一実施例に係わる半導体集積回路用マ
スク・ウェーハの基本構造を示す平面図である。1枚の
半導体ウェー/・1上に100個(10行×1()列)
の基本ブロック2が作り込まれている。これらの基本ブ
ロック2は、複数の素子からなる数種の回路要素を複数
個配列集積化してなるものである。チップAは図中実線
3の位置でスクライブされ上記基本ブロック2を4個用
いて構成され、チップBは図中破線4の位置でスクライ
ブされ基本ブロック2を25個用いて構成されている。
FIG. 1 is a plan view showing the basic structure of a mask wafer for a semiconductor integrated circuit according to an embodiment of the present invention. 1 semiconductor wae/100 pieces on 1 (10 rows x 1 () column)
Basic block 2 is built in. These basic blocks 2 are formed by arranging and integrating several types of circuit elements each consisting of a plurality of elements. Chip A is scribed at the position indicated by the solid line 3 in the figure and is constructed using four basic blocks 2, and chip B is scribed at the position indicated by the broken line 4 in the figure and constructed using 25 basic blocks 2.

すなゎ′ち、チップAの場合H1枚のウェーパノから2
5個、チッ7’Bの場合は同ウェーハ1がら4個のマス
ク・チップを得ることができる。したがって、基本ブロ
ック2の回路規模が2(10ダートであれば、チップA
は800ダート、チップBは5にケ9−トとなり、同一
ウェーハ1を用いそのスクライブ位置を変えるのみで、
200ダ一ト単位で回路規模の増減が可能となる。
Sunawa'chi, in case of chip A, 2 from H1 wavepano
In the case of chip 7'B, four mask chips can be obtained from one wafer. Therefore, if the circuit scale of basic block 2 is 2 (10 darts), chip A
is 800 darts, and chip B is 5 to 9 darts. Using the same wafer 1, only changing the scribe position,
The circuit scale can be increased or decreased in units of 200 dyads.

第2図は基本ブロック2を4個用いて1個のマスク・チ
ップを構成する場合の例で前記チップAの拡大平面図を
示している。基本ブロック2は要素回路配列部分)1と
周辺回路部分12とに分けられるが、周辺回路部分12
のうち4個の基本ブロック2が隣接する部分(図の斜線
部)にはブロック相互の配線領域13が形成されている
。まだ、周辺回路部分12の隣り合わない部分は全体の
周辺回路部として用い、金属配線を形成する段階で、ゲ
ンデ゛イング・パッド14が同時に形成されるものとな
っている。
FIG. 2 shows an enlarged plan view of the chip A in an example where four basic blocks 2 are used to construct one mask chip. The basic block 2 is divided into an element circuit array part) 1 and a peripheral circuit part 12.
A wiring region 13 between the blocks is formed in a portion where four basic blocks 2 are adjacent to each other (shaded portion in the figure). The non-adjacent portions of the peripheral circuit portion 12 are still used as the entire peripheral circuit portion, and the gendering pads 14 are formed at the same time as the metal wiring is formed.

かくして本実施例によれば、スクライブ位置を変えるこ
とにより、1種類のマスク・ウェーハから基本ブロック
2を、例えば4個或いは25個有するマスク・チップを
容易に得ることができる。したがって、回路規模に応じ
たノ!−ツナライズを行い、所望の機能を持つ多品種の
LSIを製造することが可能である。
Thus, according to this embodiment, mask chips having, for example, 4 or 25 basic blocks 2 can be easily obtained from one type of mask wafer by changing the scribe position. Therefore, depending on the circuit size! - It is possible to manufacture a wide variety of LSIs with desired functions by performing tuning.

なお、本発明は上述した実施例に限定されるものではな
く、その要旨を逸脱しない範囲で、種々変形して実施す
ることができる。例えば、前記ボンディング・/?ウッ
ド、必ずしもチップの周辺に配置する必要はなく、任意
の位置に配置することができる。また、ダート・アレイ
に限定されるものではなく、マスク・スライス方式の各
種のLSIに適用することが可能である。
Note that the present invention is not limited to the embodiments described above, and can be implemented with various modifications without departing from the gist thereof. For example, the bonding/? Wood does not necessarily need to be placed around the chip, but can be placed at any position. Furthermore, the present invention is not limited to dart arrays, and can be applied to various mask-sliced LSIs.

さらに、前記スクライブ位置は実施例で示しだ位置に限
らず、必要とする回路誠模に応じて適宜定めればよいの
は文論のことである。
Furthermore, it is a matter of literature that the scribe position is not limited to the position shown in the embodiments, but may be determined as appropriate depending on the required circuit integrity.

401而の簡単な「湿間 第1図は本発明の一実施例に係わる半導体集積回路用マ
スク・ウェーハの基本41イ造を示す平面図、第2図は
上記実施例の要部イII′+成を示すもので実施例ウェ
ーハをスクライプした4個の基本ブロックからなるマス
タ・チッ′ゾの拡大平面図である。
Figure 1 is a plan view showing the basic structure of a mask wafer for semiconductor integrated circuits according to an embodiment of the present invention, and Figure 2 shows the main part of the above embodiment. FIG. 2 is an enlarged plan view of a master chip consisting of four basic blocks obtained by scribing an example wafer.

1・・・半導体ウェーハ、2・・・基本ブロック、ノド
・・要素回路配列部分、12・・・周辺回路部分、13
・・・配線領域、14・・・ボンディング・−re y
ド。
DESCRIPTION OF SYMBOLS 1... Semiconductor wafer, 2... Basic block, node... Element circuit arrangement part, 12... Peripheral circuit part, 13
... Wiring area, 14... Bonding -re y
Do.

Claims (1)

【特許請求の範囲】[Claims] 複数個の素子からなる要素回路を複数個配列してなる基
本ブロックを、半導体ウェーハ上に複数個配列すると共
に、各ブロック間に配線領域を形成してなり、上記半導
体ウェーハは上記配線領域で選択的にスクライブされ、
かつ必要とする回路規模に応じてそのスクライブ位置が
可変されるものであることを特徴とする半導体集積回路
用マスク・ウェーハ。
A plurality of basic blocks formed by arranging a plurality of element circuits each consisting of a plurality of elements are arranged on a semiconductor wafer, and a wiring area is formed between each block, and the semiconductor wafer is selected in the wiring area. scribed,
A mask wafer for semiconductor integrated circuits, characterized in that the scribe position can be varied according to the required circuit scale.
JP9057982A 1982-05-28 1982-05-28 Master wafer for semiconductor integrated circuit Pending JPS58207653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9057982A JPS58207653A (en) 1982-05-28 1982-05-28 Master wafer for semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9057982A JPS58207653A (en) 1982-05-28 1982-05-28 Master wafer for semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS58207653A true JPS58207653A (en) 1983-12-03

Family

ID=14002340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9057982A Pending JPS58207653A (en) 1982-05-28 1982-05-28 Master wafer for semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS58207653A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276735A (en) * 1985-09-30 1987-04-08 Toshiba Corp Semiconductor integrated circuit device
JPH02283065A (en) * 1989-04-25 1990-11-20 Nec Corp Manufacture of gate array type semiconductor integrated circuit
JPH03136368A (en) * 1989-10-23 1991-06-11 Nec Corp Master slice system in semiconductor integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779655A (en) * 1980-11-05 1982-05-18 Ricoh Co Ltd Manufacture of integrated circuit chip

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779655A (en) * 1980-11-05 1982-05-18 Ricoh Co Ltd Manufacture of integrated circuit chip

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276735A (en) * 1985-09-30 1987-04-08 Toshiba Corp Semiconductor integrated circuit device
JPH02283065A (en) * 1989-04-25 1990-11-20 Nec Corp Manufacture of gate array type semiconductor integrated circuit
JPH03136368A (en) * 1989-10-23 1991-06-11 Nec Corp Master slice system in semiconductor integrated circuit

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