JPS5754327A - - Google Patents

Info

Publication number: JPS5754327A
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP56122363A

Inventor

Korubezen Berunto

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens AG

Original Assignee

Siemens AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-08-06

Filing date

1981-08-04

Publication date

1982-03-31

1981-08-04 Application filed by Siemens AG filed Critical Siemens AG

1982-03-31 Publication of JPS5754327A publication Critical patent/JPS5754327A/ja

Status Pending legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Crystallography & Structural Chemistry (AREA)
Manufacturing & Machinery (AREA)
Power Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Mechanical Engineering (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Chemical Kinetics & Catalysis (AREA)
Electrochemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Photovoltaic Devices (AREA)
Processing Of Stones Or Stones Resemblance Materials (AREA)
Weting (AREA)
Mechanical Treatment Of Semiconductor (AREA)

JP56122363A 1980-08-06 1981-08-04 Pending JPS5754327A (ja)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19803029792 DE3029792A1 (de)	1980-08-06	1980-08-06	Verfahren zum zerteilen eines halbleiterkristalls in scheiben

Publications (1)

Publication Number	Publication Date
JPS5754327A true JPS5754327A (ja)	1982-03-31

Family

ID=6109024

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP56122363A Pending JPS5754327A (ja)	1980-08-06	1981-08-04

Country Status (4)

Country	Link
US (1)	US4409075A (ja)
EP (1)	EP0045446A1 (ja)
JP (1)	JPS5754327A (ja)
DE (1)	DE3029792A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006088455A (ja) *	2004-09-22	2006-04-06	Haruo Okahara	シリコン加工用水溶性切削剤組成物及び加工方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4689125A (en) *	1982-09-10	1987-08-25	American Telephone & Telegraph Co., At&T Bell Labs	Fabrication of cleaved semiconductor lasers
EP0131367B1 (en) *	1983-05-30	1989-04-05	Inoue-Japax Research Incorporated	Method of and apparatus for machining ceramic materials
FR2559960B1 (fr) *	1984-02-20	1987-03-06	Solems Sa	Procede de formation de circuits electriques en couche mince et produits obtenus
EP0296348B1 (de) *	1987-05-27	1993-03-31	Siemens Aktiengesellschaft	Ätzverfahren zum Erzeugen von Lochöffnungen oder Gräben in n-dotiertem Silizium
EP0300224B2 (en) *	1987-06-26	1998-09-30	Yuzo Mori	Strainless precision after-treatment process by radical reaction
JPH04128010A (ja) *	1990-09-19	1992-04-28	Kyoto Handotai Kk	シリコン単結晶の切断方法
US6033534A (en) *	1992-05-20	2000-03-07	Siemens Aktiengesellschaft	Method for producing an Al-containing layer with a planar surface on a substrate having hole structures with a high aspect ratio in the surface
US5338415A (en) *	1992-06-22	1994-08-16	The Regents Of The University Of California	Method for detection of chemicals by reversible quenching of silicon photoluminescence
US5387331A (en) *	1994-05-19	1995-02-07	The United States Of America As Represented By The Secretary Of The Air Force	Wafer cutting device
DE10238593A1 (de) *	2002-08-22	2004-03-11	Wacker Siltronic Ag	Verfahren zur Herstellung von Halbleiterscheiben
US7638804B2 (en) *	2006-03-20	2009-12-29	Sony Corporation	Solid-state imaging device and imaging apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE823470C (de) *	1950-09-12	1951-12-03	Siemens Ag	Verfahren zum AEtzen eines Halbleiters
US3128213A (en) *	1961-07-20	1964-04-07	Int Rectifier Corp	Method of making a semiconductor device
DE1521978A1 (de) *	1965-06-14	1970-02-12	Siemens Ag	Verfahren zum Zerteilen von durch Loesungsmittel angreifbaren Materialien ohne mechanische Zerstoerung des Strukturgefueges
JPS5198973A (en) *	1975-02-26	1976-08-31		Handotaisochino seizohoho
US3962052A (en) *	1975-04-14	1976-06-08	International Business Machines Corporation	Process for forming apertures in silicon bodies
US4096619A (en) *	1977-01-31	1978-06-27	International Telephone & Telegraph Corporation	Semiconductor scribing method
US4193852A (en) *	1977-06-14	1980-03-18	Inoue-Japax Research Incorporated	Method and apparatus for electrical machining with a multi-guided travelling electrode

1980
- 1980-08-06 DE DE19803029792 patent/DE3029792A1/de not_active Withdrawn
1981
- 1981-07-15 US US06/283,374 patent/US4409075A/en not_active Expired - Fee Related
- 1981-07-22 EP EP81105801A patent/EP0045446A1/de not_active Ceased
- 1981-08-04 JP JP56122363A patent/JPS5754327A/ja active Pending

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006088455A (ja) *	2004-09-22	2006-04-06	Haruo Okahara	シリコン加工用水溶性切削剤組成物及び加工方法
JP4493454B2 (ja) *	2004-09-22	2010-06-30	株式会社カサタニ	シリコン加工用水溶性切削剤組成物及び加工方法

Also Published As

Publication number	Publication date
EP0045446A1 (de)	1982-02-10
DE3029792A1 (de)	1982-03-11
US4409075A (en)	1983-10-11

Publication	Publication Date	Title
FR2475510B1 (ja)	1985-04-19
FR2474694B1 (ja)	1983-09-02
DE3152509T1 (ja)	1982-12-02
IN157810B (ja)	1986-06-28
FR2474432B3 (ja)	1983-11-18
FR2475527B1 (ja)	1984-03-16
DE3153267A1 (ja)	1985-08-14
FR2475677B1 (ja)	1985-03-01
JPS5754327A (ja)	1982-03-31
FR2475041B1 (ja)	1984-12-28
FR2475205B1 (ja)	1984-12-21
FR2475206B1 (ja)	1984-12-21
FR2475450B1 (ja)	1984-10-26
FR2474630B1 (ja)	1983-04-15
FR2475401B1 (ja)	1984-01-27
FR2475403B1 (ja)	1985-05-10
FR2474284B1 (ja)	1985-04-05
FR2474566B1 (ja)	1983-04-29
FR2486785B3 (ja)	1982-06-25
FR2475621B1 (ja)	1984-12-21
FR2475296B1 (ja)	1981-12-31
FR2474712B1 (ja)	1985-05-24
FR2474825B1 (ja)	1983-09-16
FR2474515B1 (ja)	1984-03-16
FR2475286B1 (ja)	1982-07-02