JPS5752139A - Method and device for etching one side of semiconductor disc - Google Patents

Method and device for etching one side of semiconductor disc

Info

Publication number
JPS5752139A
JPS5752139A JP56115018A JP11501881A JPS5752139A JP S5752139 A JPS5752139 A JP S5752139A JP 56115018 A JP56115018 A JP 56115018A JP 11501881 A JP11501881 A JP 11501881A JP S5752139 A JPS5752139 A JP S5752139A
Authority
JP
Japan
Prior art keywords
etching
semiconductor disc
disc
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56115018A
Other languages
English (en)
Inventor
Bonu Bonu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of JPS5752139A publication Critical patent/JPS5752139A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP56115018A 1980-07-23 1981-07-22 Method and device for etching one side of semiconductor disc Pending JPS5752139A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803027934 DE3027934A1 (de) 1980-07-23 1980-07-23 Verfahren zur einseitigen aetzung von halbleiterscheiben

Publications (1)

Publication Number Publication Date
JPS5752139A true JPS5752139A (en) 1982-03-27

Family

ID=6107932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56115018A Pending JPS5752139A (en) 1980-07-23 1981-07-22 Method and device for etching one side of semiconductor disc

Country Status (4)

Country Link
US (1) US4350562A (ja)
EP (1) EP0044567A1 (ja)
JP (1) JPS5752139A (ja)
DE (1) DE3027934A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6333824A (ja) * 1986-07-28 1988-02-13 Dainippon Screen Mfg Co Ltd 表面洗浄方法
JP2003059896A (ja) * 2001-08-14 2003-02-28 Dainippon Screen Mfg Co Ltd 基板処理装置
US7503978B2 (en) 2004-06-25 2009-03-17 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method which performs predetermined processing on a substrate which is positioned approximately horizontally at a substrate processing position

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
JPS609129A (ja) * 1983-06-29 1985-01-18 Fujitsu Ltd ウエツト処理装置
JPS6064436A (ja) * 1983-09-19 1985-04-13 Fujitsu Ltd スピンドライヤ
US4544446A (en) * 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
US4600463A (en) * 1985-01-04 1986-07-15 Seiichiro Aigo Treatment basin for semiconductor material
US4902531A (en) * 1986-10-30 1990-02-20 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum processing method and apparatus
AT389959B (de) * 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
DE3811068C2 (de) * 1988-03-31 1995-07-20 Telefunken Microelectron Vorrichtung zum einseitigen Bearbeiten von flächenhaft ausgedehnten Körpern, insbesondere von Halbleiterscheiben
JPH02130922A (ja) * 1988-11-11 1990-05-18 Toshiba Corp 半導体基板エッチング装置
US5213650A (en) * 1989-08-25 1993-05-25 Applied Materials, Inc. Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
US5185056A (en) * 1991-09-13 1993-02-09 International Business Machines Corporation Method and apparatus for etching semiconductor wafers and developing resists
DE19502777A1 (de) * 1994-02-22 1995-08-24 Siemens Ag Verfahren zur plasmaunterstützten Rückseitenätzung einer Halbleiterscheibe bei belackungsfreier Scheibenvorderseite
JP3388628B2 (ja) * 1994-03-24 2003-03-24 東京応化工業株式会社 回転式薬液処理装置
RU2075135C1 (ru) * 1995-01-13 1997-03-10 Акционерное общество Научно-производственная фирма "А3" Установка для плазмоструйной обработки пластин
WO1996032742A1 (fr) * 1995-04-11 1996-10-17 Zakrytoe Aktsionernoe Obschestvo Nauchno-Proizvodstvennaya Firma 'az' Installation destinee au traitement par flux plasmiques de plaques
JPH08316190A (ja) * 1995-05-18 1996-11-29 Dainippon Screen Mfg Co Ltd 基板処理装置
US5879576A (en) * 1996-05-07 1999-03-09 Hitachi Electronics Engineering Co., Ltd. Method and apparatus for processing substrates
DE19621399A1 (de) * 1996-05-28 1997-12-04 Siemens Ag Verfahren zum Ätzen eines Halbleitersubstrats sowie Ätzanlage
DE19622015A1 (de) * 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
AT405655B (de) * 1997-03-26 1999-10-25 Sez Semiconduct Equip Zubehoer Verfahren und vorrichtung zum einseitigen bearbeiten scheibenförmiger gegenstände
US6013316A (en) * 1998-02-07 2000-01-11 Odme Disc master drying cover assembly
JP2000084503A (ja) * 1998-07-13 2000-03-28 Kokusai Electric Co Ltd 被処理物の流体処理方法及びその装置
TW380284B (en) * 1998-09-09 2000-01-21 Promos Technologies Inc Method for improving etching uniformity during a wet etching process
KR100292075B1 (ko) * 1998-12-29 2001-07-12 윤종용 반도체소자제조용웨이퍼처리장치
AU2001270205A1 (en) * 2000-06-26 2002-01-08 Applied Materials, Inc. Method and apparatus for wafer cleaning
US7451774B2 (en) * 2000-06-26 2008-11-18 Applied Materials, Inc. Method and apparatus for wafer cleaning
US7171973B2 (en) * 2001-07-16 2007-02-06 Tokyo Electron Limited Substrate processing apparatus
JP2003124180A (ja) * 2001-10-16 2003-04-25 Ebara Corp 基板処理装置
DE10323085A1 (de) * 2003-05-22 2004-12-09 Aixtron Ag CVD-Beschichtungsvorrichtung
US7644512B1 (en) * 2006-01-18 2010-01-12 Akrion, Inc. Systems and methods for drying a rotating substrate
US8596623B2 (en) * 2009-12-18 2013-12-03 Lam Research Ag Device and process for liquid treatment of a wafer shaped article
US9573297B2 (en) * 2011-11-21 2017-02-21 Reza Reza Youssefi Method and system for enhancing polymerization and nanoparticle production
CN108330489A (zh) * 2018-04-20 2018-07-27 云南惠铜新材料科技有限公司 一种平滑轮廓铜箔表面粗化处理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL133498C (ja) * 1958-06-18
US4165252A (en) * 1976-08-30 1979-08-21 Burroughs Corporation Method for chemically treating a single side of a workpiece
US4118303A (en) * 1976-08-30 1978-10-03 Burroughs Corporation Apparatus for chemically treating a single side of a workpiece
US4161356A (en) * 1977-01-21 1979-07-17 Burchard John S Apparatus for in-situ processing of photoplates
US4219110A (en) * 1977-09-08 1980-08-26 Hirohiko Ubukata Wafer probe apparatus with pneumatic wafer orienting mechanism

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6333824A (ja) * 1986-07-28 1988-02-13 Dainippon Screen Mfg Co Ltd 表面洗浄方法
JP2003059896A (ja) * 2001-08-14 2003-02-28 Dainippon Screen Mfg Co Ltd 基板処理装置
US7503978B2 (en) 2004-06-25 2009-03-17 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method which performs predetermined processing on a substrate which is positioned approximately horizontally at a substrate processing position

Also Published As

Publication number Publication date
DE3027934A1 (de) 1982-02-25
US4350562A (en) 1982-09-21
EP0044567A1 (de) 1982-01-27

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