JPS572563A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS572563A
JPS572563A JP7581280A JP7581280A JPS572563A JP S572563 A JPS572563 A JP S572563A JP 7581280 A JP7581280 A JP 7581280A JP 7581280 A JP7581280 A JP 7581280A JP S572563 A JPS572563 A JP S572563A
Authority
JP
Japan
Prior art keywords
cell
wire
memory cell
reading
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7581280A
Other languages
Japanese (ja)
Inventor
Kazuo Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7581280A priority Critical patent/JPS572563A/en
Publication of JPS572563A publication Critical patent/JPS572563A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To microminiaturize a semiconductor memory cell by improving the configuration of the reading and address wires of the memory cell (2T cell ) of specific structure. CONSTITUTION:A memory is composed of N-channel MOS 11-16 and P-channel MOS 13-16 as 2T cell configuration. An N type electrode 16 is electrically floated, and is commonly used for both FETs. A P type electrode 13 to which a reference potential is applied is also commonly used. Before an address wire AA' used also as a gate electrode is bonded and formed, a contacting hole is formed, a wiring layer is bonded and formed, and the occupying area of the 2T cell is further reduced. Since the address wire AA' is arranged on the reading wire RR', it is not necessary to provide a margin for avoiding the address wire AA' at the contacting hole between the reading wire RR' and P type diffused layers 34, 44.
JP7581280A 1980-06-05 1980-06-05 Semiconductor memory cell Pending JPS572563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7581280A JPS572563A (en) 1980-06-05 1980-06-05 Semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7581280A JPS572563A (en) 1980-06-05 1980-06-05 Semiconductor memory cell

Publications (1)

Publication Number Publication Date
JPS572563A true JPS572563A (en) 1982-01-07

Family

ID=13586962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7581280A Pending JPS572563A (en) 1980-06-05 1980-06-05 Semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS572563A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601590A2 (en) * 1992-12-10 1994-06-15 Sony Corporation Semiconductor memory cell
WO2011114905A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998976A (en) * 1972-12-29 1974-09-19
JPS547889A (en) * 1977-06-20 1979-01-20 Nec Corp Semiconductor memory element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998976A (en) * 1972-12-29 1974-09-19
JPS547889A (en) * 1977-06-20 1979-01-20 Nec Corp Semiconductor memory element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601590A2 (en) * 1992-12-10 1994-06-15 Sony Corporation Semiconductor memory cell
EP0601590A3 (en) * 1992-12-10 1997-05-02 Sony Corp Semiconductor memory cell.
EP0971360A1 (en) * 1992-12-10 2000-01-12 Sony Corporation Semiconductor memory cell
WO2011114905A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9142549B2 (en) 2010-03-19 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device

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