JPS57208136A - Selective electron-beam irradiation apparatus - Google Patents

Selective electron-beam irradiation apparatus

Info

Publication number
JPS57208136A
JPS57208136A JP9429281A JP9429281A JPS57208136A JP S57208136 A JPS57208136 A JP S57208136A JP 9429281 A JP9429281 A JP 9429281A JP 9429281 A JP9429281 A JP 9429281A JP S57208136 A JPS57208136 A JP S57208136A
Authority
JP
Japan
Prior art keywords
electron
detector
optical system
output signal
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9429281A
Other languages
Japanese (ja)
Inventor
Yuji Furumura
Mikio Takagi
Mamoru Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9429281A priority Critical patent/JPS57208136A/en
Publication of JPS57208136A publication Critical patent/JPS57208136A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To automatically eliminate errors peculiar to an optical system, by applying a signal detected by one of two optical apparatus in the same optical system to the other. CONSTITUTION:An electron-beam detecting apparatus 1 has an electron-beam emitter 3, an electron-beam regulator 5, an electron-beam scanner 6, a pattern memory 8 having materials different in secondary-electron emission efficiency from each other correspondingly to patterns to be lighographed, and a secondary-electron detector 10 for detecting the amount of secondary electrons reflected from the memory 8. An electron-beam lithography apparatus 2 has devices with the same structures as those in the apparatus 1, such as an electron-beam scanner 6', and an electron-beam modulator 12 whose beam intensity is controlled by the output signal of the detector 10 or the signal obtained by stepwise discriminating the output signal between two kinds of level on the basis of a predetermined value. A scanning signal generator 7 is used for the apparatus 1 and 2 in common.
JP9429281A 1981-06-18 1981-06-18 Selective electron-beam irradiation apparatus Pending JPS57208136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9429281A JPS57208136A (en) 1981-06-18 1981-06-18 Selective electron-beam irradiation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9429281A JPS57208136A (en) 1981-06-18 1981-06-18 Selective electron-beam irradiation apparatus

Publications (1)

Publication Number Publication Date
JPS57208136A true JPS57208136A (en) 1982-12-21

Family

ID=14106179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9429281A Pending JPS57208136A (en) 1981-06-18 1981-06-18 Selective electron-beam irradiation apparatus

Country Status (1)

Country Link
JP (1) JPS57208136A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8305861B2 (en) 2003-07-03 2012-11-06 Oakley William S Adaptive read and read-after-write for carbon nanotube recorders

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8305861B2 (en) 2003-07-03 2012-11-06 Oakley William S Adaptive read and read-after-write for carbon nanotube recorders

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