JPS57204033A - Formation of fine pattern - Google Patents

Formation of fine pattern

Info

Publication number
JPS57204033A
JPS57204033A JP8929181A JP8929181A JPS57204033A JP S57204033 A JPS57204033 A JP S57204033A JP 8929181 A JP8929181 A JP 8929181A JP 8929181 A JP8929181 A JP 8929181A JP S57204033 A JPS57204033 A JP S57204033A
Authority
JP
Japan
Prior art keywords
film
resist
pattern
fine pattern
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8929181A
Other languages
Japanese (ja)
Other versions
JPH0241740B2 (en
Inventor
Katsuhiro Kawabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8929181A priority Critical patent/JPS57204033A/en
Publication of JPS57204033A publication Critical patent/JPS57204033A/en
Publication of JPH0241740B2 publication Critical patent/JPH0241740B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve resolution and sensitivity of a resist and to form a fine pattern having good precision, by etching a material to be worked by using a resist pattern which is formed on a resist film containing PMMA and MMA as a mask. CONSTITUTION:An oxide film 2 is formed on an upper surface of a Si substrate 1, and a solution contaning PMM (polymethyl methacrylate) and MMA (methyl methacrylate) in a solvent is applied on the film 2 to form a resist film 3. Then, UV is irradiated on the surface of the resist film 3, and the film 3 is heat treated. After the film 3 is imaged in a prescribed pattern by using an electronic beam imaging device, the film 3 is developed to form a resist pattern. The oxide film 2 is screened and etched by using the resist pattern as a mask. The oxide pattern 2 obtained is faithful in the resist pattern and is formable of a fine pattern in good precision.
JP8929181A 1981-06-10 1981-06-10 Formation of fine pattern Granted JPS57204033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8929181A JPS57204033A (en) 1981-06-10 1981-06-10 Formation of fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8929181A JPS57204033A (en) 1981-06-10 1981-06-10 Formation of fine pattern

Publications (2)

Publication Number Publication Date
JPS57204033A true JPS57204033A (en) 1982-12-14
JPH0241740B2 JPH0241740B2 (en) 1990-09-19

Family

ID=13966580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8929181A Granted JPS57204033A (en) 1981-06-10 1981-06-10 Formation of fine pattern

Country Status (1)

Country Link
JP (1) JPS57204033A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951527A (en) * 1982-09-17 1984-03-26 Matsushita Electric Ind Co Ltd Pattern formation
JPS6027131A (en) * 1983-07-25 1985-02-12 Rohm Co Ltd Method for coating photoresist
JPS6045511U (en) * 1983-09-02 1985-03-30 日本電気株式会社 solid state microwave oscillator
JPS62273529A (en) * 1986-05-10 1987-11-27 チバ−ガイギ−　アクチエンゲゼル　シヤフト Image formation
JPS63204253A (en) * 1987-02-20 1988-08-23 Hitachi Ltd Pattern forming method
JPS6431416A (en) * 1987-07-27 1989-02-01 Nec Corp Photoetching
WO1994006058A1 (en) * 1992-09-10 1994-03-17 Kernforschungszentrum Karlsruhe Gmbh Use of a casting resin and process for producing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951527A (en) * 1982-09-17 1984-03-26 Matsushita Electric Ind Co Ltd Pattern formation
JPS6027131A (en) * 1983-07-25 1985-02-12 Rohm Co Ltd Method for coating photoresist
JPS6045511U (en) * 1983-09-02 1985-03-30 日本電気株式会社 solid state microwave oscillator
JPS62273529A (en) * 1986-05-10 1987-11-27 チバ−ガイギ−　アクチエンゲゼル　シヤフト Image formation
JPS63204253A (en) * 1987-02-20 1988-08-23 Hitachi Ltd Pattern forming method
JPS6431416A (en) * 1987-07-27 1989-02-01 Nec Corp Photoetching
JPH0548928B2 (en) * 1987-07-27 1993-07-22 Nippon Electric Co
WO1994006058A1 (en) * 1992-09-10 1994-03-17 Kernforschungszentrum Karlsruhe Gmbh Use of a casting resin and process for producing the same

Also Published As

Publication number Publication date
JPH0241740B2 (en) 1990-09-19

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