JPS57193070A - Forming method for gate electrode of schottky junction gate type field effect transistor - Google Patents

Forming method for gate electrode of schottky junction gate type field effect transistor

Info

Publication number
JPS57193070A
JPS57193070A JP7840881A JP7840881A JPS57193070A JP S57193070 A JPS57193070 A JP S57193070A JP 7840881 A JP7840881 A JP 7840881A JP 7840881 A JP7840881 A JP 7840881A JP S57193070 A JPS57193070 A JP S57193070A
Authority
JP
Japan
Prior art keywords
layer
gate electrode
hole
insulating
schottky junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7840881A
Other languages
Japanese (ja)
Inventor
Masao Uchida
Tadao Ishibashi
Masao Ida
Yuuki Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7840881A priority Critical patent/JPS57193070A/en
Publication of JPS57193070A publication Critical patent/JPS57193070A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a gate electrode of length in the order of submicron by depositing conductive material to become an insulating layer and a gate electrode from oblique direction alternately with a mask having a hole when the gate electrode of a Schottky junction gate type FET is formed. CONSTITUTION:An N-type layer 3 is epitaxially grown on a semi-insulating GaAs substrate 2 as a substrate 4, and source electrode 7 and a drain electrode 8 are formed at the prescribed interval on the layer 3. Then, a resist layer 10 having a hole 9 at the center is formed on the overall surface including the electrodes, an insulating material is deposited from the oblique direction designated by an arrow 16, an insulating layer 18 is formed on the surface of the layer 10, an insulating layer 17 is formed at one side wall of the hole 9, and an insulating layer 15 notched at the region 14 is formed on the bottom of the hole 9. Thereafter a conductive material 24 is deposited from the direction of an arrow 25 of opposite side, a gate electrode 26 contacted with the layer 3 in the region 14 and bridged at the edge on the layer 15 is produced, the layer 10 is removed together with the layer 18 on the layer 10 and the material 24, thereby obtaining a desired ultrafine gate electrode 26.
JP7840881A 1981-05-23 1981-05-23 Forming method for gate electrode of schottky junction gate type field effect transistor Pending JPS57193070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7840881A JPS57193070A (en) 1981-05-23 1981-05-23 Forming method for gate electrode of schottky junction gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7840881A JPS57193070A (en) 1981-05-23 1981-05-23 Forming method for gate electrode of schottky junction gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS57193070A true JPS57193070A (en) 1982-11-27

Family

ID=13661202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7840881A Pending JPS57193070A (en) 1981-05-23 1981-05-23 Forming method for gate electrode of schottky junction gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS57193070A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220375A (en) * 1985-03-26 1986-09-30 Nec Corp Semiconductor device and manufacture thereof
JPS6387773A (en) * 1986-09-30 1988-04-19 Nec Corp Schottky barrier type field effect transistor
US5652451A (en) * 1994-09-05 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Recessed gate field effect transistor
EP0836224A2 (en) * 1996-10-09 1998-04-15 Oki Electric Industry Co., Ltd. Method of manufacturing a high capacitance capacitor using sputtering
JP2005136080A (en) * 2003-10-29 2005-05-26 Sharp Corp Semiconductor laser element, its manufacturing method, and optical pickup element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220375A (en) * 1985-03-26 1986-09-30 Nec Corp Semiconductor device and manufacture thereof
JPS6387773A (en) * 1986-09-30 1988-04-19 Nec Corp Schottky barrier type field effect transistor
US5652451A (en) * 1994-09-05 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Recessed gate field effect transistor
EP0836224A2 (en) * 1996-10-09 1998-04-15 Oki Electric Industry Co., Ltd. Method of manufacturing a high capacitance capacitor using sputtering
EP0836224A3 (en) * 1996-10-09 1999-09-29 Oki Electric Industry Co., Ltd. Method of manufacturing a high capacitance capacitor using sputtering
US6207499B1 (en) 1996-10-09 2001-03-27 Oki Electric Industry Co., Ltd. Semiconductor device, method of fabricating the same, and sputtering apparatus
JP2005136080A (en) * 2003-10-29 2005-05-26 Sharp Corp Semiconductor laser element, its manufacturing method, and optical pickup element

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