JPS57192032A - Forming method for insulating film - Google Patents

Forming method for insulating film

Info

Publication number
JPS57192032A
JPS57192032A JP56076553A JP7655381A JPS57192032A JP S57192032 A JPS57192032 A JP S57192032A JP 56076553 A JP56076553 A JP 56076553A JP 7655381 A JP7655381 A JP 7655381A JP S57192032 A JPS57192032 A JP S57192032A
Authority
JP
Japan
Prior art keywords
electrode
insulating film
gas
plasma
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56076553A
Other languages
Japanese (ja)
Other versions
JPS6360532B2 (en
Inventor
Akira Takamatsu
Miyoko Shibata
Takeo Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56076553A priority Critical patent/JPS57192032A/en
Publication of JPS57192032A publication Critical patent/JPS57192032A/en
Publication of JPS6360532B2 publication Critical patent/JPS6360532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve reliability by using CO2 as an oxidizing gas when plasma is generated in a reaction gas containing silicon hydride and the oxidizing gas and an insulating film consisting of glass containing Si and O is formed. CONSTITUTION:A lower electrode 3 made of Al and a discoid upper electrode 4 made of stainless steel opposed to the electrode 3 are mounted into a bell jar 1 for a CVD device for plasma deposition. A reaction gas system consists of PH3- SiH4-CO2-Ar. PH3 and SiH4 are introduced from the lower section of the electrode 3 while using Ar as a diluting gas. CO2, on the other hand, is introduced from the bottom of the bell jar 1, and supplied to a reaction chamber 7 through the through-holes 5 of the electrode 3. A semiconductor wafer 6 is set while the upper section of the surface is downward directed on the electrode 4. The reaction gas is plasma-excited in the reaction chamber 7, and the insulating film is deposited onto the wafer 6.
JP56076553A 1981-05-22 1981-05-22 Forming method for insulating film Granted JPS57192032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076553A JPS57192032A (en) 1981-05-22 1981-05-22 Forming method for insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076553A JPS57192032A (en) 1981-05-22 1981-05-22 Forming method for insulating film

Publications (2)

Publication Number Publication Date
JPS57192032A true JPS57192032A (en) 1982-11-26
JPS6360532B2 JPS6360532B2 (en) 1988-11-24

Family

ID=13608443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076553A Granted JPS57192032A (en) 1981-05-22 1981-05-22 Forming method for insulating film

Country Status (1)

Country Link
JP (1) JPS57192032A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302555A (en) * 1991-06-10 1994-04-12 At&T Bell Laboratories Anisotropic deposition of dielectrics
EP0622474A1 (en) * 1993-04-29 1994-11-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Continuous process for making a silica coating on a solid substrate
US5744403A (en) * 1989-08-31 1998-04-28 Lucent Technologies Inc. Dielectric film deposition method and apparatus
JP2007150086A (en) * 2005-11-29 2007-06-14 Fujitsu Ltd Method of manufacturing semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744403A (en) * 1989-08-31 1998-04-28 Lucent Technologies Inc. Dielectric film deposition method and apparatus
US5302555A (en) * 1991-06-10 1994-04-12 At&T Bell Laboratories Anisotropic deposition of dielectrics
EP0622474A1 (en) * 1993-04-29 1994-11-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Continuous process for making a silica coating on a solid substrate
FR2704558A1 (en) * 1993-04-29 1994-11-04 Air Liquide Method and device for creating a deposit of silicon oxide on a solid moving substrate.
US5576076A (en) * 1993-04-29 1996-11-19 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for creating a deposit of silicon oxide on a traveling solid substrate
US5753193A (en) * 1993-04-29 1998-05-19 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Device for creating a deposit of silicon oxide on a traveling solid substrate
JP2007150086A (en) * 2005-11-29 2007-06-14 Fujitsu Ltd Method of manufacturing semiconductor device
US7749897B2 (en) 2005-11-29 2010-07-06 Fujitsu Semiconductor Limited Method of manufacturing semiconductor device
JP4533304B2 (en) * 2005-11-29 2010-09-01 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS6360532B2 (en) 1988-11-24

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