JPS57167631A - Plasma vapor-phase growing method - Google Patents

Plasma vapor-phase growing method

Info

Publication number
JPS57167631A
JPS57167631A JP56036385A JP3638581A JPS57167631A JP S57167631 A JPS57167631 A JP S57167631A JP 56036385 A JP56036385 A JP 56036385A JP 3638581 A JP3638581 A JP 3638581A JP S57167631 A JPS57167631 A JP S57167631A
Authority
JP
Japan
Prior art keywords
plasma
sih4
activation
gas
generating region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56036385A
Other languages
Japanese (ja)
Other versions
JPS6347141B2 (en
Inventor
Kanetake Takasaki
Kenji Koyama
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56036385A priority Critical patent/JPS57167631A/en
Publication of JPS57167631A publication Critical patent/JPS57167631A/en
Publication of JPS6347141B2 publication Critical patent/JPS6347141B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the bias of the composition of a vapor-phase grown film by introducing raw material gases having the different rates of activation to plasma into regions having different field frequency and changing the gases into plasma. CONSTITUTION:N2 Gas having the low rate of activation to plasma is introduced into the firs plasma generating region 12 from an introducing port 11. The rate of activation to plasma of N2 gas is improved by introducing a microwave electric field (2.45MHz) having comparatively high frequency into the plasma generating region 12 from a waveguide 13, and the life of a plasma gas is lengthened. On the other hand, SiH4 is introduced into the second plasma generating region 23 in a reaction section 2 from an introducing port 21, a high-frequency electric field (13.56MHz) is applied between electrodes 22, 24, and SiH4 is changed into plasma. SiH4 changed into plasma is reacted with N2 plasma introduced from a conduit 16, and the SiN film is formed onto a substrate 25.
JP56036385A 1981-03-13 1981-03-13 Plasma vapor-phase growing method Granted JPS57167631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56036385A JPS57167631A (en) 1981-03-13 1981-03-13 Plasma vapor-phase growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56036385A JPS57167631A (en) 1981-03-13 1981-03-13 Plasma vapor-phase growing method

Publications (2)

Publication Number Publication Date
JPS57167631A true JPS57167631A (en) 1982-10-15
JPS6347141B2 JPS6347141B2 (en) 1988-09-20

Family

ID=12468374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56036385A Granted JPS57167631A (en) 1981-03-13 1981-03-13 Plasma vapor-phase growing method

Country Status (1)

Country Link
JP (1) JPS57167631A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148326A (en) * 1983-02-14 1984-08-25 Sumitomo Electric Ind Ltd Fabrication of thin film by cvd method
EP0120307A2 (en) * 1983-02-25 1984-10-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
JPS59225517A (en) * 1983-06-06 1984-12-18 Nippon Denso Co Ltd Apparatus for manufacture of amorphous semiconductor
FR2584098A1 (en) * 1985-06-27 1987-01-02 Air Liquide Process for depositing a silicon coating on a metal article
JPS6222420A (en) * 1985-07-23 1987-01-30 Canon Inc Formation device for deposited film
JPS63125679A (en) * 1987-05-30 1988-05-28 Canon Inc Formation of deposited film
US4820378A (en) * 1987-07-17 1989-04-11 Texas Instruments Incorporated Process for etching silicon nitride selectively to silicon oxide
US4838984A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for etching films of mercury-cadmium-telluride and zinc sulfid
US4838990A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
JPH01227430A (en) * 1988-03-08 1989-09-11 Sony Corp Vapor phase growth method
US4886570A (en) * 1987-07-16 1989-12-12 Texas Instruments Incorporated Processing apparatus and method
JPH02320A (en) * 1987-07-16 1990-01-05 Texas Instr Inc <Ti> Apparatus and method of treatment
JPH028361A (en) * 1987-07-16 1990-01-11 Texas Instr Inc <Ti> Treatment apparatus and method
US5030475A (en) * 1988-09-06 1991-07-09 Schott Glaswerke Plasma-enhanced CVD coating process
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02208059A (en) * 1989-02-07 1990-08-17 Kubota Ltd Color printer
JPH02208060A (en) * 1989-02-07 1990-08-17 Kubota Ltd Color printer
US6461692B2 (en) * 1996-02-23 2002-10-08 Ebara Corporation Chemical vapor deposition method and chemical vapor deposition apparatus

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148326A (en) * 1983-02-14 1984-08-25 Sumitomo Electric Ind Ltd Fabrication of thin film by cvd method
EP0120307A2 (en) * 1983-02-25 1984-10-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
EP0120307A3 (en) * 1983-02-25 1989-05-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
JPH0546093B2 (en) * 1983-06-06 1993-07-13 Nippon Denso Co
JPS59225517A (en) * 1983-06-06 1984-12-18 Nippon Denso Co Ltd Apparatus for manufacture of amorphous semiconductor
US6113701A (en) * 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US5976259A (en) * 1985-02-14 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
FR2584098A1 (en) * 1985-06-27 1987-01-02 Air Liquide Process for depositing a silicon coating on a metal article
JPS6222420A (en) * 1985-07-23 1987-01-30 Canon Inc Formation device for deposited film
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
JPS63125679A (en) * 1987-05-30 1988-05-28 Canon Inc Formation of deposited film
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
JPH02320A (en) * 1987-07-16 1990-01-05 Texas Instr Inc <Ti> Apparatus and method of treatment
JPH028361A (en) * 1987-07-16 1990-01-11 Texas Instr Inc <Ti> Treatment apparatus and method
US4886570A (en) * 1987-07-16 1989-12-12 Texas Instruments Incorporated Processing apparatus and method
US4838990A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4838984A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for etching films of mercury-cadmium-telluride and zinc sulfid
US4820378A (en) * 1987-07-17 1989-04-11 Texas Instruments Incorporated Process for etching silicon nitride selectively to silicon oxide
JPH01227430A (en) * 1988-03-08 1989-09-11 Sony Corp Vapor phase growth method
US5030475A (en) * 1988-09-06 1991-07-09 Schott Glaswerke Plasma-enhanced CVD coating process
US5062508A (en) * 1988-09-06 1991-11-05 Schott Glaswerke Cvd coating process for producing coatings and apparatus for carrying out the process
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate

Also Published As

Publication number Publication date
JPS6347141B2 (en) 1988-09-20

Similar Documents

Publication Publication Date Title
JPS57167631A (en) Plasma vapor-phase growing method
EP0074212A1 (en) Apparatus for forming thin film
AU1822288A (en) Method of treating surfaces of substrates with the aid of a plasma
JPS52140267A (en) Vapor epitaxial crystal growing device
JPS6417870A (en) Manufacture of carbon
EP0261857A3 (en) Large cross-sectional area molecular beam source for semiconductor processing
JPS6451618A (en) Microcrystalline silicon carbide semiconductor film and manufacture thereof
EP1179621A4 (en) N-type semiconductor diamond and its fabrication method
JPS57158370A (en) Formation of metallic thin film
Hiraki et al. Preparation and characterization of wide area, high quality diamond film using magnetoactive plasma chemical vapour deposition
JPS6412522A (en) Semiconductor crystal epitaxy method
JPS5536980A (en) Production of film by plasma reaction
EP0848434A3 (en) Method of forming semiconductor thin film
JPS56138921A (en) Method of formation for impurity introduction layer
JPS5547381A (en) Plasma etching method
JPS56164523A (en) Vapor phase growth of semiconductor
JPS54112790A (en) Source boat for vapor phase growth of compound semiconductor
JPS5518077A (en) Device for growing film under gas
JPS56153727A (en) Manufacture of semiconductor device
JPS57134553A (en) Chemical vapor phase growing method
FR2443137A1 (en) Mfr. technique for epitaxial layers of semiconductor material - includes using homogenising chamber for carrier gas and deposited material to improve uniformity of deposition
JPS6446936A (en) Growth method of thin film
JPS54137973A (en) Formation method of plasma nitride
JPS54123599A (en) Forming method for silicon nitride film
JPS5617917A (en) Manufacture of silicon oxide film