JPS57145368A - Semiconductor intergrated circuit - Google Patents
Semiconductor intergrated circuitInfo
- Publication number
- JPS57145368A JPS57145368A JP56029905A JP2990581A JPS57145368A JP S57145368 A JPS57145368 A JP S57145368A JP 56029905 A JP56029905 A JP 56029905A JP 2990581 A JP2990581 A JP 2990581A JP S57145368 A JPS57145368 A JP S57145368A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- substrate
- elements
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000012216 screening Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To obtain the highly sensitive and stable elements over the range from an ultraviolet region to a near infrared region, by coating the exposed area of the elements and its vicinity by a light screening film such as metal through a semiconductor film, except for the light receiving part of a semiconductor substrate on the side where light ssnsitive elements such as photodiode are exposed. CONSTITUTION:A plurality of light sensitive elements PD1-PDn such as photodiodes, phototransistors, and photothyristors, a plurality of address switches AS1-ASn, and a scanning circuit SC are provided on a semiconductor substrate 1, and they are electrically connected. In this constitution, P type regions 14 are provided on an N type substrate 13 corresponding to the substrate 1, with the surface being exposed. PN junctions 15 are yielded between the substrate 13 and the regions 14. The entire surface is coated by an SiO2 film 2. Thereafter, the light screening conducting film 3 comprising metal, polycrystal semiconductor, and the like is deposited on the film 2, with the film 3 being extended to the inside of the region 14 by the length l which is the same as the width of the film 2. The light receiving part of each region 14 is located only in the film 2. Thus leak currents in the area other than the light receiving part are decreased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56029905A JPS57145368A (en) | 1981-03-04 | 1981-03-04 | Semiconductor intergrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56029905A JPS57145368A (en) | 1981-03-04 | 1981-03-04 | Semiconductor intergrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57145368A true JPS57145368A (en) | 1982-09-08 |
Family
ID=12288991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56029905A Pending JPS57145368A (en) | 1981-03-04 | 1981-03-04 | Semiconductor intergrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57145368A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0222338A2 (en) * | 1985-11-12 | 1987-05-20 | Kabushiki Kaisha Toshiba | Semiconductor photo-sensing device |
JPS62152163A (en) * | 1985-12-25 | 1987-07-07 | Res Dev Corp Of Japan | Planar type photoelectric conversion device |
JPS62226659A (en) * | 1986-03-28 | 1987-10-05 | Canon Inc | Semiconductor device |
US4743955A (en) * | 1985-05-01 | 1988-05-10 | Canon Kabushiki Kaisha | Photoelectric converting device |
JPS63269568A (en) * | 1987-04-27 | 1988-11-07 | Seiko Instr & Electronics Ltd | Image sensor chip of contact-type image sensor |
JPS6454758A (en) * | 1987-08-26 | 1989-03-02 | Fuji Electric Co Ltd | Semiconductor integrated circuit device |
US5153422A (en) * | 1990-03-15 | 1992-10-06 | Dainippon Screen Mfg. Co., Ltd. | Photosensor and image scanner utilizing the same |
EP0509597A2 (en) * | 1991-04-19 | 1992-10-21 | Philips Electronics Uk Limited | Opto-electronic memory system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52131489A (en) * | 1976-04-28 | 1977-11-04 | Oki Electric Ind Co Ltd | Photoelectric converter |
JPS5474387A (en) * | 1977-11-25 | 1979-06-14 | Nec Corp | Infrared-ray detector |
JPS5552278A (en) * | 1978-10-13 | 1980-04-16 | Fujitsu Ltd | Solid image pickup device |
-
1981
- 1981-03-04 JP JP56029905A patent/JPS57145368A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52131489A (en) * | 1976-04-28 | 1977-11-04 | Oki Electric Ind Co Ltd | Photoelectric converter |
JPS5474387A (en) * | 1977-11-25 | 1979-06-14 | Nec Corp | Infrared-ray detector |
JPS5552278A (en) * | 1978-10-13 | 1980-04-16 | Fujitsu Ltd | Solid image pickup device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4743955A (en) * | 1985-05-01 | 1988-05-10 | Canon Kabushiki Kaisha | Photoelectric converting device |
EP0222338A2 (en) * | 1985-11-12 | 1987-05-20 | Kabushiki Kaisha Toshiba | Semiconductor photo-sensing device |
JPS62152163A (en) * | 1985-12-25 | 1987-07-07 | Res Dev Corp Of Japan | Planar type photoelectric conversion device |
JPS62226659A (en) * | 1986-03-28 | 1987-10-05 | Canon Inc | Semiconductor device |
JPS63269568A (en) * | 1987-04-27 | 1988-11-07 | Seiko Instr & Electronics Ltd | Image sensor chip of contact-type image sensor |
JPS6454758A (en) * | 1987-08-26 | 1989-03-02 | Fuji Electric Co Ltd | Semiconductor integrated circuit device |
US5153422A (en) * | 1990-03-15 | 1992-10-06 | Dainippon Screen Mfg. Co., Ltd. | Photosensor and image scanner utilizing the same |
EP0509597A2 (en) * | 1991-04-19 | 1992-10-21 | Philips Electronics Uk Limited | Opto-electronic memory system |
EP0509597A3 (en) * | 1991-04-19 | 1995-04-26 | Philips Electronics Uk Ltd |
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