JPS57124438A - Ion beam etching for silicon carbide - Google Patents

Ion beam etching for silicon carbide

Info

Publication number
JPS57124438A
JPS57124438A JP993681A JP993681A JPS57124438A JP S57124438 A JPS57124438 A JP S57124438A JP 993681 A JP993681 A JP 993681A JP 993681 A JP993681 A JP 993681A JP S57124438 A JPS57124438 A JP S57124438A
Authority
JP
Japan
Prior art keywords
etching
ion beam
sic
silicon carbide
beam etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP993681A
Other languages
Japanese (ja)
Other versions
JPH0222538B2 (en
Inventor
Susumu Nanba
Hiroaki Aritome
Shinji Matsui
Toshiya Yamato
Shinya Mizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN Institute of Physical and Chemical Research
Original Assignee
RIKEN Institute of Physical and Chemical Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN Institute of Physical and Chemical Research filed Critical RIKEN Institute of Physical and Chemical Research
Priority to JP993681A priority Critical patent/JPS57124438A/en
Publication of JPS57124438A publication Critical patent/JPS57124438A/en
Publication of JPH0222538B2 publication Critical patent/JPH0222538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To easily perform a microscopic work on SiC by a method wherein an ion beam etching is performed using the mixture gas of CF4 and O2. CONSTITUTION:When the etching is performed using the mixture gas of the CD4 and the O2, as the carbon layer to be formed on the face of an SiC sample is reacted to O2 and converted to Co or CO2, the surface of the SiC sample and the etching rate is increased. When the mixture rate of the P2 is 4%, the maximum etching rate can be obtained. In the course of etching process, a mask consisting of a Cr thin film is formed on the surface of the SiC layer 2 of a graphite substrate 1, and an etching is performed through the intermediary of a mask 3 using reactive ion beam of the mixed gas of CF4+O2.
JP993681A 1981-01-26 1981-01-26 Ion beam etching for silicon carbide Granted JPS57124438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP993681A JPS57124438A (en) 1981-01-26 1981-01-26 Ion beam etching for silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP993681A JPS57124438A (en) 1981-01-26 1981-01-26 Ion beam etching for silicon carbide

Publications (2)

Publication Number Publication Date
JPS57124438A true JPS57124438A (en) 1982-08-03
JPH0222538B2 JPH0222538B2 (en) 1990-05-18

Family

ID=11733905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP993681A Granted JPS57124438A (en) 1981-01-26 1981-01-26 Ion beam etching for silicon carbide

Country Status (1)

Country Link
JP (1) JPS57124438A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180124A (en) * 1984-02-27 1985-09-13 Nippon Telegr & Teleph Corp <Ntt> Ion beam etching method
JPS61150272A (en) * 1984-12-24 1986-07-08 Sharp Corp Manufacture of silicon carbide semiconductor element
JPS62216335A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Dry etching method
JPH04293234A (en) * 1991-03-22 1992-10-16 Shimadzu Corp Etching method of sic
EP0767490A1 (en) * 1995-10-02 1997-04-09 Motorola, Inc. Method of etching silicon carbide
JP2012182373A (en) * 2011-03-02 2012-09-20 Taiyo Nippon Sanso Corp Silicon carbide removal device and silicon carbide removal method
US8637872B2 (en) 2008-11-19 2014-01-28 Showa Denko K.K. Semiconductor device and method of manufacturing semiconductor device
JP2019087642A (en) * 2017-11-07 2019-06-06 株式会社ハイシック Compound semiconductor wafer processing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353263A (en) * 1976-10-26 1978-05-15 Toshiba Corp Manufacture of semiconductor element
JPS5727024A (en) * 1980-07-25 1982-02-13 Mitsubishi Electric Corp Washing of reactor for plasma cvd method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353263A (en) * 1976-10-26 1978-05-15 Toshiba Corp Manufacture of semiconductor element
JPS5727024A (en) * 1980-07-25 1982-02-13 Mitsubishi Electric Corp Washing of reactor for plasma cvd method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180124A (en) * 1984-02-27 1985-09-13 Nippon Telegr & Teleph Corp <Ntt> Ion beam etching method
JPS61150272A (en) * 1984-12-24 1986-07-08 Sharp Corp Manufacture of silicon carbide semiconductor element
JPH0476205B2 (en) * 1984-12-24 1992-12-03 Sharp Kk
JPS62216335A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Dry etching method
JPH04293234A (en) * 1991-03-22 1992-10-16 Shimadzu Corp Etching method of sic
EP0767490A1 (en) * 1995-10-02 1997-04-09 Motorola, Inc. Method of etching silicon carbide
US8637872B2 (en) 2008-11-19 2014-01-28 Showa Denko K.K. Semiconductor device and method of manufacturing semiconductor device
JP2012182373A (en) * 2011-03-02 2012-09-20 Taiyo Nippon Sanso Corp Silicon carbide removal device and silicon carbide removal method
JP2019087642A (en) * 2017-11-07 2019-06-06 株式会社ハイシック Compound semiconductor wafer processing method

Also Published As

Publication number Publication date
JPH0222538B2 (en) 1990-05-18

Similar Documents

Publication Publication Date Title
CA1122922A (en) Reactive ion etching
JPS6432627A (en) Low-temperature dry etching method
AU1822288A (en) Method of treating surfaces of substrates with the aid of a plasma
JPS57124438A (en) Ion beam etching for silicon carbide
ES2074969A6 (en) Halogen-assisted chemical vapor deposition of diamond
GB1490665A (en) Method of growing epitaxial layers of silicon
JPS56121632A (en) Film formation
JPS57130431A (en) Manufacture of semiconductor device
JPS53123349A (en) Plasm cutting method and plasma torch
JPS572585A (en) Forming method for aluminum electrode
ATE215616T1 (en) METHOD FOR MAKING A BC(N):H LAYER
JPS55149195A (en) Manufacture of silicon carbide substrate
JPS57154834A (en) Etching method by reactive ion
JPS55134173A (en) Etching method for aluminum or aluminum base alloy
Pan et al. Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films. Technical Report
JPS57194532A (en) Selective etching for organic high molecule coupling substance
JPS57155382A (en) Reactive spatter etching method
JPS6481314A (en) Formation of doping silicon thin film
JPS5246762A (en) Method of boron diffusion of silicon
JPS5496371A (en) Mask forming method
JPS6417430A (en) Etching method
JPS55149197A (en) Manufacture of silicon carbide substrate
EP0099558A3 (en) Fast plasma etch for aluminum
JPS56153727A (en) Manufacture of semiconductor device
JPS6411329A (en) Dry etching