JPS5693370A - Manufacture of mos-type semiconductor device - Google Patents
Manufacture of mos-type semiconductor deviceInfo
- Publication number
- JPS5693370A JPS5693370A JP16975079A JP16975079A JPS5693370A JP S5693370 A JPS5693370 A JP S5693370A JP 16975079 A JP16975079 A JP 16975079A JP 16975079 A JP16975079 A JP 16975079A JP S5693370 A JPS5693370 A JP S5693370A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- films
- sio2
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain an element in fine structure by a method wherein after the formation of a gate electrode, an impurity is introduced corresponded to a source. drain region, the periphery of the electrode is oxidized to make an electrode width thin and also the impurity is pressed-in and diffusion-formed. CONSTITUTION:A plurality of thick field SiO2 films 2 are formed on a P<-> type Si substrate 1, a thin gate SiO2 film 3 is cover-attached to the substrate 1 surrounded by the films 2 and a polycrystalline Si film 4 and an Si3N4 film 5 are grown layer- built on the whole surface. Then, the films 5, 4 are applied etchings to be made a gate electrode 6 consisting of the films 5, 4, and ions are injected to form the N type source and drain and in addition, diffusion wiring layers 7-9 with the gate electrode 6 as a mask. Thereafter, the periphery of the film 4 is changed by a heat treatment to make the electrode 6 width thin and also the depths of the layers 7-9 are made deeper by the heat treatment applied at this time. Subsquently, the film 5 on the electrode 6 is removed and the whole surface is covered with an SiO2 protective film 12. Thus, the element is made high density and Miller effect is also reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16975079A JPS5693370A (en) | 1979-12-26 | 1979-12-26 | Manufacture of mos-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16975079A JPS5693370A (en) | 1979-12-26 | 1979-12-26 | Manufacture of mos-type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5693370A true JPS5693370A (en) | 1981-07-28 |
Family
ID=15892143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16975079A Pending JPS5693370A (en) | 1979-12-26 | 1979-12-26 | Manufacture of mos-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5693370A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58118153A (en) * | 1982-01-07 | 1983-07-14 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS58180055A (en) * | 1981-11-26 | 1983-10-21 | Seiko Epson Corp | Image sensor |
| JPS58219765A (en) * | 1982-06-15 | 1983-12-21 | Oki Electric Ind Co Ltd | Semiconductor integrated circuit and manufacture thereof |
-
1979
- 1979-12-26 JP JP16975079A patent/JPS5693370A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58180055A (en) * | 1981-11-26 | 1983-10-21 | Seiko Epson Corp | Image sensor |
| JPS58118153A (en) * | 1982-01-07 | 1983-07-14 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS58219765A (en) * | 1982-06-15 | 1983-12-21 | Oki Electric Ind Co Ltd | Semiconductor integrated circuit and manufacture thereof |
| JPH05868B2 (en) * | 1982-06-15 | 1993-01-06 | Oki Electric Ind Co Ltd |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5766674A (en) | Semiconductor device | |
| JPS5693370A (en) | Manufacture of mos-type semiconductor device | |
| JPS5583267A (en) | Method of fabricating semiconductor device | |
| JPS54130883A (en) | Production of semiconductor device | |
| JPS5515230A (en) | Semiconductor device and its manufacturing method | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS54153583A (en) | Semiconductor device | |
| JPS54116185A (en) | Manufacture for semiconductor device | |
| JPS54124687A (en) | Production of semiconductor device | |
| JPS55105332A (en) | Manufacture of semiconductor device | |
| JPS55102269A (en) | Method of fabricating semiconductor device | |
| JPS572579A (en) | Manufacture of junction type field effect transistor | |
| JPS5612777A (en) | Vertical type field effect semiconductor device and manufacture therefor | |
| JPS5683975A (en) | Semiconductor device and manufacture | |
| JPS57112032A (en) | Formation of insulating film | |
| JPS5561069A (en) | Manufacture of semiconductor device | |
| JPS54162982A (en) | Manufacture of semiconductor device | |
| JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
| JPS55108772A (en) | Semiconductor integrated circuit device | |
| JPS5491185A (en) | Semiconductor divece | |
| JPS54139486A (en) | Manufacture of semiconductor device | |
| JPS5693358A (en) | Manufacture of resistor | |
| JPS57149775A (en) | Manufacture of semiconductor device | |
| JPS57153462A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS5710246A (en) | Manufacture of semiconductor device |