JPS5670644A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS5670644A
JPS5670644A JP14652779A JP14652779A JPS5670644A JP S5670644 A JPS5670644 A JP S5670644A JP 14652779 A JP14652779 A JP 14652779A JP 14652779 A JP14652779 A JP 14652779A JP S5670644 A JPS5670644 A JP S5670644A
Authority
JP
Japan
Prior art keywords
film
si3n4
mask
substrate
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14652779A
Other languages
Japanese (ja)
Inventor
Osamu Ozawa
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14652779A priority Critical patent/JPS5670644A/en
Publication of JPS5670644A publication Critical patent/JPS5670644A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To enhance the integrity of a semiconductor integrated circuit be sequentially forming an SiO2 film, a polysilicon film and an Si3N4 film on a semiconductor substrate, removing a part of the Si3N4 film by an anisotropic etching and forming a thermally oxidized film with the residual Si3N4 film as a mask. CONSTITUTION:The SiO2 film 2, polysilicon film 3 and Si3N4 film 4 are sequentially formed on the surface of a P type Si substrate 1, and a part of the film 4 is selectively removed by anisotropic etching such as an ion etching or the like using a photoresist mask 5. After the photoresist is then removed, a field oxide film 6 is formed by thermal oxidation with the Si3N4 film as a mask. As this time strain force occurred upon thermal oxidation is absorbed by the film 3. Thus, the crystalline defect such as dislocation or the like is not introduced into the surface of the substrate as caused by the strain force, and the leakage current can also be eliminated, the field film can be precisely formed, and the integrity of the MOSIC or the like can be improved.
JP14652779A 1979-11-14 1979-11-14 Manufacture of semiconductor integrated circuit Pending JPS5670644A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14652779A JPS5670644A (en) 1979-11-14 1979-11-14 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14652779A JPS5670644A (en) 1979-11-14 1979-11-14 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5670644A true JPS5670644A (en) 1981-06-12

Family

ID=15409655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14652779A Pending JPS5670644A (en) 1979-11-14 1979-11-14 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5670644A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840839A (en) * 1981-09-04 1983-03-09 Toshiba Corp Manufacture of semiconductor device
JPS6174350A (en) * 1984-09-19 1986-04-16 Sony Corp Manufacture of semiconductor device
JPH05182959A (en) * 1990-12-26 1993-07-23 Korea Electron Telecommun Method of isolating semiconductor element utilizing local polyoxide
US5432117A (en) * 1993-06-11 1995-07-11 Rohm Co., Ltd. Method of producing semiconductor device
US6201275B1 (en) 1995-06-30 2001-03-13 Nippon Steel Corporation Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840839A (en) * 1981-09-04 1983-03-09 Toshiba Corp Manufacture of semiconductor device
JPS6174350A (en) * 1984-09-19 1986-04-16 Sony Corp Manufacture of semiconductor device
JPH05182959A (en) * 1990-12-26 1993-07-23 Korea Electron Telecommun Method of isolating semiconductor element utilizing local polyoxide
US5432117A (en) * 1993-06-11 1995-07-11 Rohm Co., Ltd. Method of producing semiconductor device
US6201275B1 (en) 1995-06-30 2001-03-13 Nippon Steel Corporation Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same
US6482692B2 (en) 1995-06-30 2002-11-19 Nippon Steel Corporation Method of manufacturing a semiconductor device, having first and second semiconductor regions with field shield isolation structures and a field oxide film covering a junction between semiconductor regions
US6486013B2 (en) 1995-06-30 2002-11-26 Nippon Steel Corporation Method of manufacturing a semiconductor device having regions of different conductivity types isolated by field oxide
US6656781B2 (en) 1995-06-30 2003-12-02 Nippon Steel Corporation Method of manufacturing a semiconductor device, having first and second semiconductor regions with field shield isolation structures and a field oxide film covering a junction between semiconductor regions

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