JPS566479A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS566479A
JPS566479A JP8233579A JP8233579A JPS566479A JP S566479 A JPS566479 A JP S566479A JP 8233579 A JP8233579 A JP 8233579A JP 8233579 A JP8233579 A JP 8233579A JP S566479 A JPS566479 A JP S566479A
Authority
JP
Japan
Prior art keywords
chip
integrated circuit
semiconductor integrated
electric signal
electric signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8233579A
Other languages
Japanese (ja)
Inventor
Satoshi Iwagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8233579A priority Critical patent/JPS566479A/en
Publication of JPS566479A publication Critical patent/JPS566479A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain inexpensively a semiconductor integrated circuit with high workability by supplying DC power for operating the circuit in the IC chip by a photocoupling type and introducing an electric signal in the IC chip externally thereby. CONSTITUTION:When a light is irradiated from a light emitting element 11 on a substrate 10 to a solar battery 8, the solar battery 8 generates a DC voltage and supplies it into a semiconductor integrated circuit in an IC chip 7 to allow the IC chip 7 to operate as predetermined. An electric signal outputted from the IC chip 7 in operation irradiates the light emitting elements 9a-9e on the IC chip 7 equivalent in magnitude to the electric signal. The lights from these elements are received by photoreceptors 12a-12e. Thus, electric signals substantially equal to the electric signals of the IC chip 7 are generated at the photoreceptor group 12 on the substrate 10 to lead out the electric signals in the IC chip 7 externally.
JP8233579A 1979-06-26 1979-06-26 Semiconductor integrated circuit Pending JPS566479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8233579A JPS566479A (en) 1979-06-26 1979-06-26 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8233579A JPS566479A (en) 1979-06-26 1979-06-26 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS566479A true JPS566479A (en) 1981-01-23

Family

ID=13771682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8233579A Pending JPS566479A (en) 1979-06-26 1979-06-26 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS566479A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893268A (en) * 1981-11-30 1983-06-02 Toshiba Corp Photocoupling integrated circuit
JPS59501431A (en) * 1982-08-19 1984-08-09 ウエスターン　エレクトリツク　カムパニー，インコーポレーテツド Optically coupled integrated circuit array
US5200631A (en) * 1991-08-06 1993-04-06 International Business Machines Corporation High speed optical interconnect
JPH0629513A (en) * 1991-12-23 1994-02-04 Internatl Business Mach Corp <Ibm> Bilithic composite system for photo- electronic integration

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893268A (en) * 1981-11-30 1983-06-02 Toshiba Corp Photocoupling integrated circuit
JPS59501431A (en) * 1982-08-19 1984-08-09 ウエスターン　エレクトリツク　カムパニー，インコーポレーテツド Optically coupled integrated circuit array
US5200631A (en) * 1991-08-06 1993-04-06 International Business Machines Corporation High speed optical interconnect
JPH0629513A (en) * 1991-12-23 1994-02-04 Internatl Business Mach Corp <Ibm> Bilithic composite system for photo- electronic integration

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