JPS56158469A - Semiconductor logic device - Google Patents

Semiconductor logic device

Info

Publication number
JPS56158469A
JPS56158469A JP6185280A JP6185280A JPS56158469A JP S56158469 A JPS56158469 A JP S56158469A JP 6185280 A JP6185280 A JP 6185280A JP 6185280 A JP6185280 A JP 6185280A JP S56158469 A JPS56158469 A JP S56158469A
Authority
JP
Japan
Prior art keywords
region
fet
width
circuit
gates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6185280A
Other languages
Japanese (ja)
Inventor
Katsuhiko Kurumada
Kazuyoshi Asai
Yasunobu Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6185280A priority Critical patent/JPS56158469A/en
Publication of JPS56158469A publication Critical patent/JPS56158469A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To allow a NAND element and a NOR element to coexist on an equal basis with each other on the circuit consisting of a compound semiconductor by a method wherein a plurality of junction gates are provided on the N type region on a semi-insulating substrate and the interval between gates to be used as a channel is provided in such manner that it is related to the width of a depletion layer. CONSTITUTION:A rectangular N type layer 20 is provided on a semi-insulating substrate 1 of GaAs, for example, and a junction gate FET to be used for driving is formed on a region 20a and another junction gate FET to be used for loading is formed on a region 20b. For the FET used for driving, P type layers 24 and 25 reaching the substrate are formed on both sides of the region 20a, gate electrodes 26 and 27 are formed on the above layers 24 and 25, and a conductive channel is formed on the region, which is obtained by excluding the depletion layer width d1 and d2 from the distance (d) between the facing junctions. The circuit, wherein the FET is connected to the load FET, performs the function as a NAND element when it comes close to the OFF state even when a high level signal is applied to both gates by narrowing the (d) width. Also, said circuit is turned to an NOR element when it comes close to ON state even when a low level signal is applied by widening the (d) width. As a result, the circuit wherein the NAND and NOR elements exist in a mixed state can be formed easily and also the operational margin of a multi-input gate NAND element can be enlarged.
JP6185280A 1980-05-10 1980-05-10 Semiconductor logic device Pending JPS56158469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6185280A JPS56158469A (en) 1980-05-10 1980-05-10 Semiconductor logic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6185280A JPS56158469A (en) 1980-05-10 1980-05-10 Semiconductor logic device

Publications (1)

Publication Number Publication Date
JPS56158469A true JPS56158469A (en) 1981-12-07

Family

ID=13183033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6185280A Pending JPS56158469A (en) 1980-05-10 1980-05-10 Semiconductor logic device

Country Status (1)

Country Link
JP (1) JPS56158469A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59191385A (en) * 1983-04-15 1984-10-30 Oki Electric Ind Co Ltd Semiconductor device
JPS62112377A (en) * 1985-11-12 1987-05-23 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor for integrated circuit
US4798274A (en) * 1985-09-20 1989-01-17 Hitachi, Ltd. Balustrade for a passenger conveyor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110281A (en) * 1975-03-24 1976-09-29 Mitsubishi Electric Corp DENKAI KOKATORAN JISUTA
JPS5273681A (en) * 1975-12-16 1977-06-20 Toshiba Corp Field effect transistor
JPS5482178A (en) * 1977-12-14 1979-06-30 Semiconductor Res Found Electrostatic inductive intergrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110281A (en) * 1975-03-24 1976-09-29 Mitsubishi Electric Corp DENKAI KOKATORAN JISUTA
JPS5273681A (en) * 1975-12-16 1977-06-20 Toshiba Corp Field effect transistor
JPS5482178A (en) * 1977-12-14 1979-06-30 Semiconductor Res Found Electrostatic inductive intergrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59191385A (en) * 1983-04-15 1984-10-30 Oki Electric Ind Co Ltd Semiconductor device
US4798274A (en) * 1985-09-20 1989-01-17 Hitachi, Ltd. Balustrade for a passenger conveyor
JPS62112377A (en) * 1985-11-12 1987-05-23 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor for integrated circuit

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